Справочник транзисторов. BFP181

 

Биполярный транзистор BFP181 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: BFP181
   Маркировка: RFs
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.175 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 20 V
   Макcимальный постоянный ток коллектора (Ic): 0.02 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 8000 MHz
   Статический коэффициент передачи тока (hfe): 40
   Корпус транзистора: SOT23

 Аналоги (замена) для BFP181

 

 

BFP181 Datasheet (PDF)

 ..1. Size:60K  siemens
bfp181.pdf

BFP181
BFP181

BFP 181NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA fT = 8GHz F = 1.45dB at 900MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFP 181 RFs Q62702-F1271 1 = C 2 = E 3 = B 4 = E SOT-143Maximum RatingsParameter Symbol Values

 ..2. Size:548K  infineon
bfp181.pdf

BFP181
BFP181

BFP181Low Noise Silicon Bipolar RF Transistor For low noise, high-gain broadband amplifiers at3 collector currents from 0.5 mA to 12 mA241 fT = 8 GHz, NFmin = 0.9 dB at 900 MHz Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensitive device, observe handling precaution!Type Marking Pin Config

 0.1. Size:59K  siemens
bfp181w.pdf

BFP181
BFP181

BFP 181WNPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA fT = 8GHz F = 1.45dB at 900MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFP 181W RFs Q62702-F1501 1 = E 2 = C 3 = E 4 = B SOT-343Maximum RatingsParameter Symbol Valu

 0.2. Size:58K  siemens
bfp181r.pdf

BFP181
BFP181

BFP 181RNPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA fT = 8GHz F = 1.45dB at 900MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFP 181R RFs Q62702-F1685 1 = E 2 = C 3 = E 4 = B SOT-143RMaximum RatingsParameter Symbol Val

 9.1. Size:58K  siemens
bfp182w.pdf

BFP181
BFP181

BFP 182WNPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA fT = 8GHz F = 1.2dB at 900MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFP 182W RGs Q62702-F1502 1 = E 2 = C 3 = E 4 = B SOT-343Maximum RatingsParameter Symbol Values

 9.2. Size:59K  siemens
bfp180w.pdf

BFP181
BFP181

BFP 180WNPN Silicon RF Transistor For low-power amplifiers in mobile communication systems (pager) at collector currents from 0.2 to 2.5mA fT = 7GHz F = 2.1dB at 900MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFP 180W RDs Q62702-F1500 1 = E 2 = C 3 = E 4 = B SOT-343Maximum RatingsPa

 9.3. Size:60K  siemens
bfp183.pdf

BFP181
BFP181

BFP 183NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA fT = 8 GHz F = 1.2 dB at 900 MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFP 183 RHs Q62702-F1382 1 = C 2 = E 3 = B 4 = E SOT-143Maximum RatingsParameter Symbol Valu

 9.4. Size:76K  siemens
bfp180.pdf

BFP181
BFP181

BFP 180NPN Silicon RF Transistor For low-power amplifiers in mobile communication systems (pager) at collector currents from 0.2 to 2.5mA fT = 7GHz F = 2.1dB at 900MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFP 180 RDs Q62702-F1377 1 = C 2 = E 3 = B 4 = E SOT-143Maximum RatingsPara

 9.5. Size:60K  siemens
bfp182.pdf

BFP181
BFP181

BFP 182NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA fT = 8GHz F = 1.2dB at 900MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFP 182 RGs Q62702-F1396 1 = C 2 = E 3 = B 4 = E SOT-143Maximum RatingsParameter Symbol Values Un

 9.6. Size:59K  siemens
bfp183w.pdf

BFP181
BFP181

BFP 183WNPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA fT = 8 GHz F = 1.2 dB at 900 MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFP 183W RHs Q62702-F1503 1 = E 2 = C 3 = E 4 = B SOT-343Maximum RatingsParameter Symbol Va

 9.7. Size:58K  siemens
bfp183r.pdf

BFP181
BFP181

BFP 183RNPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA fT = 8 GHz F = 1.2 dB at 900 MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFP 183R RHs Q62702-F1594 1 = E 2 = C 3 = E 4 = B SOT-143RMaximum RatingsParameter Symbol V

 9.8. Size:58K  siemens
bfp182r.pdf

BFP181
BFP181

BFP 182RNPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA fT = 8GHz F = 1.2dB at 900MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFP 182R RGs Q62702-F1601 1 = E 2 = C 3 = E 4 = B SOT-143RMaximum RatingsParameter Symbol Values

 9.9. Size:545K  infineon
bfp182w.pdf

BFP181
BFP181

BFP182WLow Noise Silicon Bipolar RF Transistor For low noise, high-gain broadband amplifiers at3 collector currents from 1 mA to 20 mA241 fT = 8 GHz, NFmin = 0.9 dB at 900 MHz Pb-free (RoHS compliant) and halogen-free package with visible leads Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensitive device, observe handling

 9.10. Size:541K  infineon
bfp183.pdf

BFP181
BFP181

BFP183Low Noise Silicon Bipolar RF Transistor For low noise, high-gain broadband amplifiers at3 collector currents from 2 mA to 30 mA24 fT = 8 GHz, NFmin = 0.9 dB at 900 MHz 1 Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensitive device, observe handling precaution!Type Marking Pin Configura

 9.11. Size:543K  infineon
bfp183w.pdf

BFP181
BFP181

BFP183WLow Noise Silicon Bipolar RF Transistor For low noise, high-gain broadband amplifiers at3 collector currents from 2 mA to 30 mA241 fT = 8 GHz, NFmin = 0.9 dB at 900 MHz Pb-free (RoHS compliant) and halogen-free package with visible leads Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handlin

 9.12. Size:550K  infineon
bfp182r.pdf

BFP181
BFP181

BFP182RLow Noise Silicon Bipolar RF Transistor For low noise, high-gain broadband amplifiers at3 collector currents from 1 mA to 20 mA24 fT = 8 GHz, NFmin = 0.9 dB at 900 MHz1 Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensitive device, observe handling precaution!Type Marking Pin Configu

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