Справочник транзисторов. BFQ196

 

Биполярный транзистор BFQ196 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: BFQ196
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.65 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 20 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 175 °C
   Граничная частота коэффициента передачи тока (ft): 6000 MHz
   Статический коэффициент передачи тока (hfe): 11
   Корпус транзистора: SOT89

 Аналоги (замена) для BFQ196

 

 

BFQ196 Datasheet (PDF)

 9.1. Size:226K  philips
bfq19 n.pdf

BFQ196
BFQ196

BFQ19NPN 5 GHz wideband transistorRev. 03 28 September 2007 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new links asshown below.

 9.2. Size:31K  philips
bfq19 cnv 2.pdf

BFQ196
BFQ196

DISCRETE SEMICONDUCTORSDATA SHEETBFQ19NPN 5 GHz wideband transistorSeptember 1995Product specificationFile under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 5 GHz wideband transistor BFQ19DESCRIPTION PINNINGNPN transistor in a SOT89 plasticPIN DESCRIPTIONenvelope intended for application inCode: FBthick and thin-film circuits. It is

 9.3. Size:28K  siemens
bfq19s.pdf

BFQ196
BFQ196

BFQ 19SNPN Silicon RF Transistor For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 10 mA to 70 mA CECC-type available: CECC 50 002/259ESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFQ 19S FGs Q62702-F1088 1 =

 9.4. Size:28K  siemens
bfq193.pdf

BFQ196
BFQ196

BFQ 193NPN Silicon RF Transistor For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers fT = 7.5 GHz F = 1.3 dB at 900 MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFQ 193 RCs Q62702-F1312 1 = B 2 = C 3 = E SOT-89Maximum RatingsParameter Symbol Values UnitC

 9.5. Size:547K  infineon
bfq19s.pdf

BFQ196
BFQ196

BFQ19SLow Noise Silicon Bipolar RF Transistor For low noise, low distortion broadband12 amplifiers in antenna and32 telecommunications systems up to 1.5 GHz at collector currents from 10 mA to 70 mA Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensitive device, observe handling precaution!Ty

Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
Back to Top