DISCRETE SEMICONDUCTORSDATA SHEETM3D173BFR505TNPN 9 GHz wideband transistorProduct specification 2000 May 17Supersedes data of 2000 Mar 14Philips Semiconductors Product specificationNPN 9 GHz wideband transistor BFR505TFEATURES DESCRIPTION Low current consumption NPN transistor in a plastic SOT416(SC-75) package.3 High power gainfpage Low noise figurePI

DISCRETE SEMICONDUCTORS DATA SHEETM3D173BFR505TNPN 9 GHz wideband transistorProduct specification 2000 May 17Supersedes data of 2000 Mar 14NXP Semiconductors Product specificationNPN 9 GHz wideband transistor BFR505TFEATURES DESCRIPTION Low current consumption NPN transistor in a plastic SOT416 (SC-75) package.3 High power gainlfpage Low noise figurePI

BFR505NPN 9 GHz wideband transistorRev. 03 20 July 2004 Product data sheet1. Product profile1.1 General descriptionThe BFR505 is an NPN silicon planar epitaxial transistor, intended for applications in theRF front end in wideband applications in the GHz range, such as analog and digitalcellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, pagersan

DISCRETE SEMICONDUCTORSDATA SHEETBFR505NPN 9 GHz wideband transistorSeptember 1995Product specificationFile under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 9 GHz wideband transistor BFR505FEATURES PINNING High power gainPIN DESCRIPTION Low noise figureCode: N30 High transition frequency1 basefpage 3 Gold metalliza