DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BFR54NPN medium frequency transistor1997 Jul 11Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN medium frequency transistor BFR54FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 15 V).1

DISCRETE SEMICONDUCTORSDATA SHEETook, halfpageM3D088BFR540NPN 9 GHz wideband transistorProduct specification 2000 May 30Supersedes data of 1999 Aug 23Philips Semiconductors Product specificationNPN 9 GHz wideband transistor BFR540FEATURES DESCRIPTION High power gain NPN silicon planar epitaxial transistorin a SOT23 plastic package. Low noise figure High tra

BFR540NPN 9 GHz wideband transistorRev. 05 1 September 2004 Product data sheet1. Product profile1.1 General descriptionThe BFR540 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package.1.2 Features High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability.1.3 Applications RF front end wideband applic

isc Silicon NPN RF Transistor BFR540DESCRIPTIONHigh Power GainHigh Current Gain Bandwidth ProductLow Noise FigureMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for RF frontend in wideband applications in theGHz range,such as analog and digital cellular telephones,cordless telephones(CT1, CT2,DEC, etc.).ABSOLU