MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BFR92ALT1/DThe RF LineNPN SiliconBFR92ALT1High-Frequency TransistorsDesigned primarily for use in highgain, lownoise, smallsignal UHF andmicrowave amplifiers constructed with thick and thinfilm circuits using surfacemount components. T1 suffix indicates tape and reel packaging of 3,000 units per reel.

DISCRETE SEMICONDUCTORSDATA SHEETBFR92NPN 5 GHz wideband transistorSeptember 1995Product specificationFile under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 5 GHz wideband transistor BFR92DESCRIPTION PINNINGNPN transistor in a plastic SOT23PIN DESCRIPTIONenvelope primarily intended for use inCode: P1p fpage 3RF wideband amplifiers an

DISCRETE SEMICONDUCTORSDATA SHEETM3D173BFR92ATNPN 5 GHz wideband transistorProduct specification 2000 Mar 28Supersedes data of 1999 Nov 02Philips Semiconductors Product specificationNPN 5 GHz wideband transistor BFR92ATFEATURES DESCRIPTION High power gain Silicon NPN transistor encapsulated3fpagein a plastic SOT416 (SC-75) package. Gold metallization ensures

DISCRETE SEMICONDUCTORSDATA SHEETBFR92ANPN 5 GHz wideband transistor1997 Oct 29Product specificationSupersedes data of September 1995File under discrete semiconductors, SC14Philips Semiconductors Product specificationNPN 5 GHz wideband transistor BFR92AFEATURES DESCRIPTION High power gain NPN wideband transistor in a plastic page 3SOT23 package. Low noise figure

DISCRETE SEMICONDUCTORSDATA SHEETBFR92AWNPN 5 GHz wideband transistor1995 Sep 18Product specificationSupersedes data of October 1992File under discrete semiconductors, SC14Philips Semiconductors Product specificationNPN 5 GHz wideband transistor BFR92AWFEATURES DESCRIPTIONhandbook, 2 columns3 High power gain Silicon NPN transistor encapsulatedin a plastic SOT323

BFR92ANPN 5 GHz wideband transistorRev. 04 2 March 2009 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new links asshown below.http

BFR 92PNPN Silicon RF Transistor For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA Complementary type: BFT92 (PNP) CECC-type available: CECC 50002/249ESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFR 92P GFs Q62702-F1050 1 = B 2

BFR 92WNPN Silicon RF Transistor For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA Complementary type: BFT 92W (PNP)ESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFR 92W P1s Q62702-F1488 1 = B 2 = E 3 = C SOT-323Maximum RatingsPa

BFR92PLow Noise Silicon Bipolar RF Transistor For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensitive device, observe handling precaution!Type Marking Pin Configuration PackageBFR92P GFs SO

SMALL SIGNAL NPN RF TRANSISTOR BFR92, BFR92A Silicon Planar Epitaxial NPN Transistor Hermetic Ceramic Surface Mount Package (SOT23 Compatible) Suitable For UHF Applications Up To 1.0GHz Space Level and High-Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage 20V VCEO Collector

SMALL SIGNAL NPN RF TRANSISTOR BFR92, BFR92A Silicon Planar Epitaxial NPN Transistor Hermetic Ceramic Surface Mount Package (SOT23 Compatible) Suitable For UHF Applications Up To 1.0GHz Space Level and High-Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage 20V VCEO Collector

INCHANGE Semiconductorisc Silicon NPN RF Transistor BFR92ADESCRIPTIONLow Noise and High GainNF = 1.3 dB TYP.@V = 10 V, I = 7 mA, f = 1.0 GHzCE CHigh Power GainS 2 = 11.5 dB TYP.21e@V = 10 V, I = 20 mA, f = 1.0 GHzCE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low noise amplifier at VHF, UH