MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BFR93ALT1/DThe RF LineNPN SiliconBFR93ALT1High-Frequency TransistorsDesigned primarily for use in highgain, lownoise, smallsignal UHF andmicrowave amplifiers constructed with thick and thinfilm circuits using surfacemount components. T1 Suffix Indicates Tape and Reel Packaging of 3,000 Units per Reel.

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BFR93ALT1/DThe RF LineNPN SiliconBFR93ALT1High Frequency Transistors. . . designed primarily for use in high-gain, low-noise, small-signal UHF andmicrowave amplifiers constructed with thick and thin-film circuits using surfacemount components.RF TRANSISTORSNPN SILICONMAXIMUM RATINGSRating Symbol Value UnitCo

DISCRETE SEMICONDUCTORSDATA SHEETBFR93ANPN 6 GHz wideband transistor1997 Oct 29Product specificationSupersedes data of September 1995File under discrete semiconductors, SC14Philips Semiconductors Product specificationNPN 6 GHz wideband transistor BFR93AFEATURES DESCRIPTIONpage 3 High power gain NPN wideband transistor in a plasticSOT23 package. Low noise figur

DISCRETE SEMICONDUCTORSDATA SHEETBFR93NPN 5 GHz wideband transistor1997 Oct 29Product specificationSupersedes data of September 1995File under discrete semiconductors, SC14Philips Semiconductors Product specificationNPN 5 GHz wideband transistor BFR93FEATURES DESCRIPTIONpage 3 Very low intermodulation distortion NPN wideband transistor in a plasticSOT23 package.

DISCRETE SEMICONDUCTORS DATA SHEETBFR93ANPN 6 GHz wideband transistorProduct specification 1997 Oct 29Supersedes data of September 1995NXP Semiconductors Product specificationNPN 6 GHz wideband transistor BFR93AFEATURES DESCRIPTION High power gain NPN wideband transistor in a plastic lfpage 3SOT23 package. Low noise figurePNP complement: BFT93. Very low inte

DISCRETE SEMICONDUCTORS DATA SHEETBFR93AWNPN 5 GHz wideband transistorProduct specification 1995 Sep 18Supersedes data of November 1992NXP Semiconductors Product specificationNPN 5 GHz wideband transistor BFR93AWFEATURES DESCRIPTION3handbook, 2 columns High power gain Silicon NPN transistor encapsulated in a plastic SOT323 (S-mini) package. Gold metallization

DISCRETE SEMICONDUCTORSDATA SHEETBFR93AWNPN 5 GHz wideband transistor1995 Sep 18Product specificationSupersedes data of November 1992File under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 5 GHz wideband transistor BFR93AWFEATURES DESCRIPTIONhandbook, 2 columns3 High power gain Silicon NPN transistor encapsulatedin a plastic SOT323

DISCRETE SEMICONDUCTORSDATA SHEETM3D173BFR93ATNPN 5 GHz wideband transistorProduct specification 2000 Mar 09Supersedes data of 1999 Nov 02Philips Semiconductors Product specificationNPN 5 GHz wideband transistor BFR93ATFEATURES DESCRIPTION High power gain Silicon NPN transistor encapsulated3fpagein a plastic SOT416 (SC-75) package. Gold metallization ensures

BFR 93ANPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector current from 2mA to 30mA CECC.type available: CECC 50 002/256ESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFR 93A R2s Q62702-F1086 1 = B 2 = E 3 = C SOT-23Maximum RatingsParameter Symbol Values Unit

BFR 93AWNPN Silicon RF Transistor For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mAESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFR 93AW R2s Q62702-F1489 1 = B 2 = E 3 = C SOT-323Maximum RatingsParameter Symbol Values UnitCollector-em

BFR93ALow Noise Silicon Bipolar RF Transistor For low-noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensitive device, observe handling precaution!Type Marking Pin Configuration PackageBFR93A R2s SOT231=B 2=E 3=CMaximum R

BFR93AWLow Noise Silicon Bipolar RF Transistor For low distortion amplifiers and oscillators up to 2 GHz at collector currents from3 2 5 mA to 30 mA1 Pb-free (RoHS compliant) and halogen-free package with visible leads Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensitive device, observe handling precaution!Type Marking Pin C

isc Silicon NPN RF Transistor BFR93ADESCRIPTIONHigh Power GainHigh Current Gain Bandwidth ProductLow Noise FigureMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in RF wideband amplifiers and oscillators.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 20 VCBO

isc Silicon NPN RF Transistor BFR93AWDESCRIPTIONHigh Power GainHigh Current Gain Bandwidth ProductLow Noise FigureMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in RF wideband amplifiers and oscillators.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 20 VCBO