DISCRETE SEMICONDUCTORSDATA SHEETBFS17NPN 1 GHz wideband transistorSeptember 1995Product specificationFile under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 1 GHz wideband transistor BFS17DESCRIPTIONNPN transistor in a plastic SOT23 package.handbook, halfpage 3APPLICATIONS A wide range of RF applications such as: Mixers and osc

DISCRETE SEMICONDUCTORSDATA SHEETBFS17NPN 1 GHz wideband transistorSeptember 1995Product specificationFile under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 1 GHz wideband transistor BFS17DESCRIPTIONNPN transistor in a plastic SOT23 package.handbook, 2 columns21APPLICATIONS A wide range of RF applications such as: Mixers and

BFS17 Transistors NPN small signal transistor BFS17 Features Dimensions (Unit : mm) 1) Ideal for RF applications. BFS172) Mixers and oscillations in TV tuners. 3) RF communications equipment. 2.9 0.950.4 0.45(3) Packaging specifications(2) (1)0.95 0.95Package Taping0.151.9Type Code T116(1)EmitterBasic ordering unit (pieces) 3000(2)BaseEach lead ha

SMD Type TransistorsNPN TransistorsBFS17 (KFS17)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=25mA Collector Emitter Voltage VCEO=15V 1 2+0.1+0.050.95 -0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 C

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BFS17LT1/DThe RF LineNPN SiliconBFS17LT1High-Frequency TransistorDesigned primarily for use in highgain, lownoise amplifier, oscillator andmixer applications. Packaged for thick or thin film circuits using surface mountcomponents. T1 suffix indicates tape and reel packaging of 3,000 units per reel.RF TRAN

DISCRETE SEMICONDUCTORS DATA SHEETBFS17WNPN 1 GHz wideband transistorProduct specification 1995 Sep 04Supersedes data of November 1992NXP Semiconductors Product specificationNPN 1 GHz wideband transistor BFS17WAPPLICATIONS PINNING Primarily intended as a mixer, PIN DESCRIPTION3handbook, 2 columnsoscillator and IF amplifier in UHF and 1 baseVHF tuners.2 emitter

DISCRETE SEMICONDUCTORS DATA SHEETBFS17ANPN 3 GHz wideband transistorProduct specification September1995NXP Semiconductors Product specificationNPN 3 GHz wideband transistor BFS17ADESCRIPTIONNPN transistor in a plastic SOT23 package.handbook, halfpage 3APPLICATIONS It is intended for RF applications such as oscillatorsin TV tuners.12Top view MSB003PINNINGPIN

DISCRETE SEMICONDUCTORSDATA SHEETBFS17ANPN 3 GHz wideband transistorSeptember1995Product specificationFile under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 3 GHz wideband transistor BFS17ADESCRIPTIONNPN transistor in a plastic SOT23 package.handbook, halfpage 3APPLICATIONS It is intended for RF applications such as oscillatorsin

DISCRETE SEMICONDUCTORSDATA SHEETBFS17WNPN 1 GHz wideband transistor1995 Sep 04Product specificationSupersedes data of November 1992File under discrete semiconductors, SC14Philips Semiconductors Product specificationNPN 1 GHz wideband transistor BFS17WAPPLICATIONS PINNINGhandbook, 2 columns3Primarily intended as a mixer,PIN DESCRIPTIONoscillator and IF amplifier i

DISCRETE SEMICONDUCTORSDATA SHEETBFS17ANPN 3 GHz wideband transistorSeptember 1995Product specificationFile under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 3 GHz wideband transistor BFS17ADESCRIPTIONNPN transistor in a plastic SOT23 package.handbook, 2 columns21APPLICATIONS It is intended for RF applications such as oscillators

BFS 17WNPN Silicon RF Transistor For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mAType Marking Ordering Code Pin Configuration PackageBFS 17W MCs Q62702-F1645 1 = B 2 = E 3 = C SOT-323Maximum Ratings of any single TransistorParameter Symbol Values UnitCollector-emitter voltage VCEO 15 VCollector-base voltage VCBO 25Emitter-base voltage VEBO 2.5C

BFS 17SNPN Silicon RF Transistor For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mATape loading orientationType Marking Ordering Code Pin Configuration PackageBFS 17S MCs Q62702-F1645 1/4=B1/B2 2/5=E1/E2 3/6=C2/C1 SOT-363Maximum Ratings of any single TransistorParameter Symbol Values UnitCollector-emitter voltage VCEO 15 VCollector-base voltage VCB

BFS 17PNPN Silicon RF Transistor For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA CECC-type available: CECC 50002/248.Type Marking Ordering Code Pin Configuration PackageBFS 17P MCs Q62702-F940 1 = B 2 = E 3 = C SOT-23Maximum Ratings of any single TransistorParameter Symbol Values UnitCollector-emitter voltage VCEO 15 VCollector-base voltage V

A Product Line ofDiodes IncorporatedBFS17NNPN RF TRANSISTOR IN SOT23 Features Mechanical Data 3.2GHz unity gain for RF switching applications Case: SOT23 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Case material: molded plastic. Green molding compound. Halogen and Antimony Free. Green Device (Note 3) UL Flammability Rating 94V-0

BFS17WNPN Silicon RF Transistor For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA3 21 Pb-free (RoHS compliant) packageESD (Electrostatic discharge) sensitive device, observe handling precaution!Type Marking Pin Configuration PackageBFS17W MCs SOT3231 = B 2 = E 3 = CMaximum Ratings at TA = 25 C, unless otherwise specifiedParameter Symb

BFS17PNPN Silicon RF TransistorFeatures Maximum collector-emitter voltage VCE0 = 15 V Maximum collector current IC = 25 mA Noise figure NF = 3.5 dB 3rd order output intercept point OIP3 = 21.5 dBm 1 dB output compression point P-1dB = 10 dBm Transition frequency fT = 1.4 GHz Maximum total power dissipation Ptot = 280 mW Package: SOT23 Pb-free (R

SMD Type TransistorsNPN TransistorsBFS17A (KFS17A)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=25mA1 2 Collector Emitter Voltage VCEO=15V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 2