BFS17. Аналоги и основные параметры
Наименование производителя: BFS17
Маркировка: E1_E1p_GMA_MA
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.18 W
Макcимально допустимое напряжение коллектор-база (Ucb): 25 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 15 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 2 V
Макcимальный постоянный ток коллектора (Ic): 0.025 A
Предельная температура PN-перехода (Tj): 125 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 1000 MHz
Ёмкость коллекторного перехода (Cc): 1.5 pf
Статический коэффициент передачи тока (hFE): 25
Корпус транзистора: SOT23
Аналоги (замена) для BFS17
- подборⓘ биполярного транзистора по параметрам
BFS17 даташит
..1. Size:33K philips
bfs17 2.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET BFS17 NPN 1 GHz wideband transistor September 1995 Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BFS17 DESCRIPTION NPN transistor in a plastic SOT23 package. handbook, halfpage 3 APPLICATIONS A wide range of RF applications such as Mixers and osc
..2. Size:44K philips
bfs17.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET BFS17 NPN 1 GHz wideband transistor September 1995 Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BFS17 DESCRIPTION NPN transistor in a plastic SOT23 package. handbook, 2 columns 21 APPLICATIONS A wide range of RF applications such as Mixers and
..3. Size:47K rohm
bfs17.pdf 
BFS17 Transistors NPN small signal transistor BFS17 Features Dimensions (Unit mm) 1) Ideal for RF applications. BFS17 2) Mixers and oscillations in TV tuners. 3) RF communications equipment. 2.9 0.95 0.4 0.45 (3) Packaging specifications (2) (1) 0.95 0.95 Package Taping 0.15 1.9 Type Code T116 (1)Emitter Basic ordering unit (pieces) 3000 (2)Base Each lead ha
..4. Size:869K kexin
bfs17.pdf 
SMD Type Transistors NPN Transistors BFS17 (KFS17) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=25mA Collector Emitter Voltage VCEO=15V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 C
0.1. Size:52K motorola
bfs17lt1.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BFS17LT1/D The RF Line NPN Silicon BFS17LT1 High-Frequency Transistor Designed primarily for use in high gain, low noise amplifier, oscillator and mixer applications. Packaged for thick or thin film circuits using surface mount components. T1 suffix indicates tape and reel packaging of 3,000 units per reel. RF TRAN
0.2. Size:170K philips
bfs17w.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET BFS17W NPN 1 GHz wideband transistor Product specification 1995 Sep 04 Supersedes data of November 1992 NXP Semiconductors Product specification NPN 1 GHz wideband transistor BFS17W APPLICATIONS PINNING Primarily intended as a mixer, PIN DESCRIPTION 3 handbook, 2 columns oscillator and IF amplifier in UHF and 1 base VHF tuners. 2 emitter
0.3. Size:186K philips
bfs17a.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET BFS17A NPN 3 GHz wideband transistor Product specification September1995 NXP Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A DESCRIPTION NPN transistor in a plastic SOT23 package. handbook, halfpage 3 APPLICATIONS It is intended for RF applications such as oscillators in TV tuners. 12 Top view MSB003 PINNING PIN
0.4. Size:37K philips
bfs17a 2.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET BFS17A NPN 3 GHz wideband transistor September1995 Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A DESCRIPTION NPN transistor in a plastic SOT23 package. handbook, halfpage 3 APPLICATIONS It is intended for RF applications such as oscillators in
0.5. Size:34K philips
bfs17w 2.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET BFS17W NPN 1 GHz wideband transistor 1995 Sep 04 Product specification Supersedes data of November 1992 File under discrete semiconductors, SC14 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BFS17W APPLICATIONS PINNING handbook, 2 columns 3 Primarily intended as a mixer, PIN DESCRIPTION oscillator and IF amplifier i
0.6. Size:50K philips
bfs17a 1.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET BFS17A NPN 3 GHz wideband transistor September 1995 Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A DESCRIPTION NPN transistor in a plastic SOT23 package. handbook, 2 columns 21 APPLICATIONS It is intended for RF applications such as oscillators
0.7. Size:34K siemens
bfs17w.pdf 
BFS 17W NPN Silicon RF Transistor For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Type Marking Ordering Code Pin Configuration Package BFS 17W MCs Q62702-F1645 1 = B 2 = E 3 = C SOT-323 Maximum Ratings of any single Transistor Parameter Symbol Values Unit Collector-emitter voltage VCEO 15 V Collector-base voltage VCBO 25 Emitter-base voltage VEBO 2.5 C
0.8. Size:55K siemens
bfs17s.pdf 
BFS 17S NPN Silicon RF Transistor For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Tape loading orientation Type Marking Ordering Code Pin Configuration Package BFS 17S MCs Q62702-F1645 1/4=B1/B2 2/5=E1/E2 3/6=C2/C1 SOT-363 Maximum Ratings of any single Transistor Parameter Symbol Values Unit Collector-emitter voltage VCEO 15 V Collector-base voltage VCB
0.9. Size:48K siemens
bfs17p.pdf 
BFS 17P NPN Silicon RF Transistor For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA CECC-type available CECC 50002/248. Type Marking Ordering Code Pin Configuration Package BFS 17P MCs Q62702-F940 1 = B 2 = E 3 = C SOT-23 Maximum Ratings of any single Transistor Parameter Symbol Values Unit Collector-emitter voltage VCEO 15 V Collector-base voltage V
0.10. Size:145K diodes
bfs17n.pdf 
A Product Line of Diodes Incorporated BFS17N NPN RF TRANSISTOR IN SOT23 Features Mechanical Data 3.2GHz unity gain for RF switching applications Case SOT23 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Case material molded plastic. Green molding compound. Halogen and Antimony Free. Green Device (Note 3) UL Flammability Rating 94V-0
0.11. Size:514K infineon
bfs17w.pdf 
BFS17W NPN Silicon RF Transistor For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 3 2 1 Pb-free (RoHS compliant) package ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFS17W MCs SOT323 1 = B 2 = E 3 = C Maximum Ratings at TA = 25 C, unless otherwise specified Parameter Symb
0.12. Size:230K infineon
bfs17p.pdf 
BFS17P NPN Silicon RF Transistor Features Maximum collector-emitter voltage VCE0 = 15 V Maximum collector current IC = 25 mA Noise figure NF = 3.5 dB 3rd order output intercept point OIP3 = 21.5 dBm 1 dB output compression point P-1dB = 10 dBm Transition frequency fT = 1.4 GHz Maximum total power dissipation Ptot = 280 mW Package SOT23 Pb-free (R
0.13. Size:1043K kexin
bfs17a.pdf 
SMD Type Transistors NPN Transistors BFS17A (KFS17A) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=25mA 1 2 Collector Emitter Voltage VCEO=15V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 2
Другие транзисторы: BFS15, BFS15E, BFS15F, BFS15G, BFS16, BFS16E, BFS16F, BFS16G, 2N5401, BFS17A, BFS17AR, BFS17AW, BFS17L, BFS17LT1, BFS17P, BFS17R, BFS17S
