Биполярный транзистор BFT92 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BFT92
Маркировка: W1_W1p_W1s
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.18 W
Макcимально допустимое напряжение коллектор-база (Ucb): 20 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 15 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 2 V
Макcимальный постоянный ток коллектора (Ic): 0.025 A
Предельная температура PN-перехода (Tj): 200 °C
Граничная частота коэффициента передачи тока (ft): 4000 MHz
Ёмкость коллекторного перехода (Cc): 1.4 pf
Статический коэффициент передачи тока (hfe): 25
Корпус транзистора: SOT23
BFT92 Datasheet (PDF)
bft92 cnv 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBFT92PNP 5 GHz wideband transistorNovember 1992Product specificationFile under Discrete Semiconductors, SC14Philips Semiconductors Product specificationPNP 5 GHz wideband transistor BFT92DESCRIPTION PINNINGPNP transistor in a plastic SOT23PIN DESCRIPTIONenvelope.Code: W1pIt is primarily intended for use in RF1 basefpage 3wideba
bft92 cnv.pdf
DISCRETE SEMICONDUCTORS DATA SHEETBFT92PNP 5 GHz wideband transistorProduct specification November 1992NXP Semiconductors Product specificationPNP 5 GHz wideband transistor BFT92DESCRIPTION PINNINGPNP transistor in a plastic SOT23 PIN DESCRIPTIONenvelope.Code: W1plfpage 3It is primarily intended for use in RF 1 basewideband amplifiers, such as in aerial 2 emitt
bft92.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBFT92PNP 5 GHz wideband transistorNovember 1992Product specificationFile under Discrete Semiconductors, SC14Philips Semiconductors Product specificationPNP 5 GHz wideband transistor BFT92DESCRIPTION PINNINGPNP transistor in a plastic SOT23PIN DESCRIPTIONenvelope.Code: W1pIt is primarily intended for use in RF1 basefpage 3wideba
bft92.pdf
BFT 92PNP Silicon RF Transistor For broadband amplifiers up to 2GHz at collector currents up to 20mA Complementary type: BFR 92P (NPN)ESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFT 92 W1s Q62702-F1062 1 = B 2 = E 3 = C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emitter v
bft92w 1.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBFT92WPNP 4 GHz wideband transistorMay 1994Product specificationFile under Discrete Semiconductors, SC14Philips SemiconductorsPhilips Semiconductors Product specificationPNP 4 GHz wideband transistor BFT92WFEATURES DESCRIPTION High power gain Silicon PNP transistor in a plastic, handbook, 2 columns3SOT323 (S-mini) package. The
bft92w.pdf
DISCRETE SEMICONDUCTORS DATA SHEETBFT92WPNP 4 GHz wideband transistorProduct specification May 1994NXP Semiconductors Product specificationPNP 4 GHz wideband transistor BFT92WFEATURES DESCRIPTION High power gain Silicon PNP transistor in a plastic, 3SOT323 (S-mini) package. The handbook, 2 columns Gold metallization ensures BFT92W uses the same crystal as the
bft92w.pdf
BFT 92WPNP Silicon RF Transistor For broadband amplifiers up to 2GHz at collector currents up to 20mA Complementary type: BFR 92W (NPN)ESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFT 92W W1s Q62702-F1681 1 = B 2 = E 3 = C SOT-323Maximum RatingsParameter Symbol Values UnitCollector-emitte
Другие транзисторы... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050