Биполярный транзистор BFT92R - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BFT92R
Маркировка: W4
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.18 W
Макcимально допустимое напряжение коллектор-база (Ucb): 20 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 15 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 2 V
Макcимальный постоянный ток коллектора (Ic): 0.025 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 4000 MHz
Ёмкость коллекторного перехода (Cc): 1.4 pf
Статический коэффициент передачи тока (hfe): 25
Корпус транзистора: SOT23
BFT92R Datasheet (PDF)
bft92w 1.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBFT92WPNP 4 GHz wideband transistorMay 1994Product specificationFile under Discrete Semiconductors, SC14Philips SemiconductorsPhilips Semiconductors Product specificationPNP 4 GHz wideband transistor BFT92WFEATURES DESCRIPTION High power gain Silicon PNP transistor in a plastic, handbook, 2 columns3SOT323 (S-mini) package. The
bft92 cnv 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBFT92PNP 5 GHz wideband transistorNovember 1992Product specificationFile under Discrete Semiconductors, SC14Philips Semiconductors Product specificationPNP 5 GHz wideband transistor BFT92DESCRIPTION PINNINGPNP transistor in a plastic SOT23PIN DESCRIPTIONenvelope.Code: W1pIt is primarily intended for use in RF1 basefpage 3wideba
bft92w.pdf
DISCRETE SEMICONDUCTORS DATA SHEETBFT92WPNP 4 GHz wideband transistorProduct specification May 1994NXP Semiconductors Product specificationPNP 4 GHz wideband transistor BFT92WFEATURES DESCRIPTION High power gain Silicon PNP transistor in a plastic, 3SOT323 (S-mini) package. The handbook, 2 columns Gold metallization ensures BFT92W uses the same crystal as the
bft92 cnv.pdf
DISCRETE SEMICONDUCTORS DATA SHEETBFT92PNP 5 GHz wideband transistorProduct specification November 1992NXP Semiconductors Product specificationPNP 5 GHz wideband transistor BFT92DESCRIPTION PINNINGPNP transistor in a plastic SOT23 PIN DESCRIPTIONenvelope.Code: W1plfpage 3It is primarily intended for use in RF 1 basewideband amplifiers, such as in aerial 2 emitt
bft92.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBFT92PNP 5 GHz wideband transistorNovember 1992Product specificationFile under Discrete Semiconductors, SC14Philips Semiconductors Product specificationPNP 5 GHz wideband transistor BFT92DESCRIPTION PINNINGPNP transistor in a plastic SOT23PIN DESCRIPTIONenvelope.Code: W1pIt is primarily intended for use in RF1 basefpage 3wideba
bft92.pdf
BFT 92PNP Silicon RF Transistor For broadband amplifiers up to 2GHz at collector currents up to 20mA Complementary type: BFR 92P (NPN)ESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFT 92 W1s Q62702-F1062 1 = B 2 = E 3 = C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emitter v
bft92w.pdf
BFT 92WPNP Silicon RF Transistor For broadband amplifiers up to 2GHz at collector currents up to 20mA Complementary type: BFR 92W (NPN)ESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFT 92W W1s Q62702-F1681 1 = B 2 = E 3 = C SOT-323Maximum RatingsParameter Symbol Values UnitCollector-emitte
Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050