DISCRETE SEMICONDUCTORS DATA SHEETBFT93WPNP 4 GHz wideband transistorProduct specification March 1994Supersedes data of November 1992NXP Semiconductors Product specificationPNP 4 GHz wideband transistor BFT93WFEATURES DESCRIPTION High power gain Silicon PNP transistor in a plastic, 3handbook, 2 columnsSOT323 (S-mini) package. The Gold metallization ensures B

DISCRETE SEMICONDUCTORSDATA SHEETBFT93PNP 5 GHz wideband transistorNovember 1992Product specificationFile under Discrete Semiconductors, SC14Philips Semiconductors Product specificationPNP 5 GHz wideband transistor BFT93DESCRIPTION PINNINGPNP transistor in a plastic SOT23PIN DESCRIPTIONenvelope.Code: X1pIt is primarily intended for use in RF1 basefpage 3wideba

DISCRETE SEMICONDUCTORSDATA SHEETBFT93WPNP 4 GHz wideband transistorMarch 1994Product specificationSupersedes data of November 1992File under Discrete Semiconductors, SC14Philips SemiconductorsPhilips Semiconductors Product specificationPNP 4 GHz wideband transistor BFT93WFEATURES DESCRIPTIONhandbook, 2 columns High power gain Silicon PNP transistor in a plastic, 3

DISCRETE SEMICONDUCTORS DATA SHEETBFT93PNP 5 GHz wideband transistorProduct specification November 1992NXP Semiconductors Product specificationPNP 5 GHz wideband transistor BFT93DESCRIPTION PINNINGPNP transistor in a plastic SOT23 PIN DESCRIPTIONenvelope.Code: X1pIt is primarily intended for use in RF 1 baselfpage 3wideband amplifiers, such as in aerial 2 emitt

BFT 93PNP Silicon RF Transistor For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mAESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFT 93 X1s Q62702-F1063 1 = B 2 = E 3 = C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO