Биполярный транзистор BSP19 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BSP19
Маркировка: AT1
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 1.5 W
Макcимально допустимое напряжение коллектор-база (Ucb): 450 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 35 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 15 MHz
Ёмкость коллекторного перехода (Cc): 10 pf
Статический коэффициент передачи тока (hfe): 40
Корпус транзистора: SOT89
BSP19 Datasheet (PDF)
bsp19 bsp20.pdf
DISCRETE SEMICONDUCTORSDATA SHEETdbook, halfpageM3D087BSP19; BSP20NPN high-voltage transistors1999 Jun 01Product specificationSupersedes data of 1997 Mar 03Philips Semiconductors Product specificationNPN high-voltage transistors BSP19; BSP20FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION High voltage (max. 350 V).1 base2, 4 collectorAPPLICATION
bsp19 bsp20.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
bsp19.pdf
SOT223 NPN SILICON PLANARBSP19HIGH VOLTAGE TRANSISTORISSUE 3 FEBRUARY 1996 T i V VC i I T T EC T I D T I BABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I T IT DITI II V V I V I II i V V I V I i V V
bsp19at bsp20a.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BSP19AT1/DBSP19AT1NPN SiliconBSP20AT1Epitaxial TransistorMotorola Preferred DevicesThis family of NPN Silicon Epitaxial transistors is designed for use as a generalpurpose amplifier and in switching applications. The device is housed in the SOT-223package which is designed for medium power surface mount applications
nsvbsp19at1g.pdf
BSP19AT1G,NSVBSP19AT1GNPN Silicon ExpitaxialTransistorThis family of NPN Silicon Epitaxial transistors is designed for useas a general purpose amplifier and in switching applications. Thehttp://onsemi.comdevice is housed in the SOT-223 package which is designed formedium power surface mount applications.SOT-223 PACKAGEFeaturesNPN SILICON HIGH VOLTAGE High VoltageTRA
bsp19at1g.pdf
BSP19AT1G,NSVBSP19AT1GNPN Silicon ExpitaxialTransistorThis family of NPN Silicon Epitaxial transistors is designed for useas a general purpose amplifier and in switching applications. Thehttp://onsemi.comdevice is housed in the SOT-223 package which is designed formedium power surface mount applications.SOT-223 PACKAGEFeaturesNPN SILICON HIGH VOLTAGE High VoltageTRA
bsp19at1.pdf
BSP19AT1GNPN Silicon ExpitaxialTransistorThis family of NPN Silicon Epitaxial transistors is designed for useas a general purpose amplifier and in switching applications. Thedevice is housed in the SOT-223 package which is designed forhttp://onsemi.commedium power surface mount applications.FeaturesSOT--223 PACKAGE High Voltage: V(BR)CEO of 250 and 350 VNPN SILICON HIGH
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050