Биполярный транзистор BSP19AT1 Даташит. Аналоги
Наименование производителя: BSP19AT1
Маркировка: SP19A
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 1.5 W
Макcимально допустимое напряжение коллектор-база (Ucb): 450 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 35 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 15 MHz
Ёмкость коллекторного перехода (Cc): 10 pf
Статический коэффициент передачи тока (hfe): 80
Корпус транзистора: SOT23
Аналог (замена) для BSP19AT1
BSP19AT1 Datasheet (PDF)
bsp19at1.pdf

BSP19AT1GNPN Silicon ExpitaxialTransistorThis family of NPN Silicon Epitaxial transistors is designed for useas a general purpose amplifier and in switching applications. Thedevice is housed in the SOT-223 package which is designed forhttp://onsemi.commedium power surface mount applications.FeaturesSOT--223 PACKAGE High Voltage: V(BR)CEO of 250 and 350 VNPN SILICON HIGH
nsvbsp19at1g.pdf

BSP19AT1G,NSVBSP19AT1GNPN Silicon ExpitaxialTransistorThis family of NPN Silicon Epitaxial transistors is designed for useas a general purpose amplifier and in switching applications. Thehttp://onsemi.comdevice is housed in the SOT-223 package which is designed formedium power surface mount applications.SOT-223 PACKAGEFeaturesNPN SILICON HIGH VOLTAGE High VoltageTRA
bsp19at1g.pdf

BSP19AT1G,NSVBSP19AT1GNPN Silicon ExpitaxialTransistorThis family of NPN Silicon Epitaxial transistors is designed for useas a general purpose amplifier and in switching applications. Thehttp://onsemi.comdevice is housed in the SOT-223 package which is designed formedium power surface mount applications.SOT-223 PACKAGEFeaturesNPN SILICON HIGH VOLTAGE High VoltageTRA
bsp19at bsp20a.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BSP19AT1/DBSP19AT1NPN SiliconBSP20AT1Epitaxial TransistorMotorola Preferred DevicesThis family of NPN Silicon Epitaxial transistors is designed for use as a generalpurpose amplifier and in switching applications. The device is housed in the SOT-223package which is designed for medium power surface mount applications
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 8050 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: D39C2 | FCS9012G | BU130
History: D39C2 | FCS9012G | BU130



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