BSP52 - параметры, поиск аналогов, даташиты транзистора

Биполярный транзистор BSP52 - описание производителя. Основные параметры. Даташиты.

   Наименование производителя: BSP52
   Маркировка: AS3
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 1.5 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 0.5 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 150 MHz
   Статический коэффициент передачи тока (hfe): 5000
   Корпус транзистора: SOT89

Аналоги (замена) для BSP52

BSP52 Datasheet (PDF)

..1. Size:52K philips
bsp50 bsp51 bsp52.pdf

DISCRETE SEMICONDUCTORSDATA SHEEThandbook, halfpageM3D087BSP50; BSP51; BSP52NPN Darlington transistors1999 Apr 23Product specificationSupersedes data of 1997 Apr 22Philips Semiconductors Product specificationNPN Darlington transistors BSP50; BSP51; BSP52FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 80 V)1 base Integrated diod

..2. Size:37K fairchild semi
bsp52.pdf

BSP52NPN Darlington Transistor4 This device is designed for applications requiring extremly high current gain at collector currents to 500mA. Sourced from process 03.321SOT-2231. Base 2. Collector 3. EmitterAbsolute Maximum Ratings* TA=25C unless otherwise notedSymbol Parameter Value UnitsVCES Collector-Emitter Voltage 80 VVCBO Collector-Base Voltage 90 VVE

..3. Size:152K siemens
bsp50 bsp51 bsp52.pdf

NPN Silicon Darlington Transistors BSP 50 BSP 52 High collector current Low collector-emitter saturation voltage Complementary types: BSP 60 BSP 62 (PNP)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3 4BSP 50 BSP 50 Q62702-P1163 B C E C SOT-223BSP 51 BSP 51 Q62702-P1164BSP 52 BSP 52 Q62702-P1165Maximum RatingsParameter Symbol Values Unit

0.1. Size:113K motorola
bsp52t1r.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BSP52T1/DNPN Small-SignalBSP52T1Darlington TransistorMotorola Preferred DeviceThis NPN small signal darlington transistor is designed for use in switchingapplications, such as print hammer, relay, solenoid and lamp drivers. The device isMEDIUM POWERhoused in the SOT-223 package, which is designed for medium power su

0.2. Size:95K onsemi
sbsp52t1g.pdf

BSP52T1G, BSP52T3GNPN Small-SignalDarlington TransistorThis NPN small signal Darlington transistor is designed for use inswitching applications, such as print hammer, relay, solenoid and lampdrivers. The device is housed in the SOT-223 package, which ishttp://onsemi.comdesigned for medium power surface mount applications.FeaturesMEDIUM POWER The SOT-223 Package can be sol

0.3. Size:95K onsemi
bsp52t1g.pdf