DISCRETE SEMICONDUCTORSDATA SHEEThalfpageM3D088BSR13; BSR14NPN switching transistors1999 Apr 15Product specificationSupersedes data of 1997 Apr 22Philips Semiconductors Product specificationNPN switching transistors BSR13; BSR14FEATURES PINNING High current (max. 800 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 base2 emitterAPPLICATIONS3 collector

DISCRETE SEMICONDUCTORS DATA SHEETBSR13; BSR14NPN switching transistorsProduct data sheet 2004 Jan 13Supersedes data of 1999 Apr 15 NXP Semiconductors Product data sheetNPN switching transistors BSR13; BSR14FEATURES PINNING High current (max. 800 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 base2 emitterAPPLICATIONS3 collector Switching and linear appl

BSR13NPN General Purpose Amplifier Sourced from process 10.CESOT-23BMark: U7Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCEO Collector-Emitter Voltage 30 VVCBO Collector-Base Voltage 60 VVEBO Emitter-Base Voltage 5.0 VIC Collector Current - Continuous 0.5 ATJ, TSTG Operating and Storage Junction Temperature Range -55 ~ 1

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD Package BSR13BSR14SILICON PLANAR EPITAXIAL TRANSISTORSNPN silicon transistorsMarkingBSR13 = U7BSR14 = U8Pin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSBSR13 BSR14Collectorbase voltage (open emitter) VCB0 max. 60 75 V