Биполярный транзистор BSR16
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: BSR16
Маркировка: T8_T8p_T8t
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.425
W
Макcимально допустимое напряжение коллектор-база (Ucb): 60
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40
V
Макcимальный постоянный ток коллектора (Ic): 0.6
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 200
MHz
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора:
SOT23
Аналоги (замена) для BSR16
BSR16
Datasheet (PDF)
..1. Size:51K philips
bsr15 bsr16.pdf 
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088BSR15; BSR16PNP switching transistors1999 Apr 15Product specificationSupersedes data of 1997 May 14Philips Semiconductors Product specificationPNP switching transistors BSR15; BSR16FEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage (max. 60 V).1 base2 emitterAPPLICATIONS3 collecto
..2. Size:47K fairchild semi
bsr16.pdf 
BSR16PNP General Purpose Amplifier This device designed for use as general purpose amplifier and 3switches requiring collector currents to 500mA. Sourced from Process 63. See BCW68G for Characteristics.2SOT-231Mark: T81. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Va
..3. Size:132K nxp
bsr15 bsr16.pdf 
DISCRETE SEMICONDUCTORS DATA SHEETBSR15; BSR16PNP switching transistorsProduct data sheet 2004 Jan 13Supersedes data of 1999 Apr 15 NXP Semiconductors Product data sheetPNP switching transistors BSR15; BSR16FEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage (max. 60 V).1 base2 emitterAPPLICATIONS3 collector Medium power switching.
..4. Size:351K onsemi
bsr16.pdf 
PNP Epitaxial SiliconTransistorBSR16PNP General Purpose Amplifier This Device Designed for Use as General Purpose Amplifier andSwitches Requiring Collector Currents to 500 mA www.onsemi.com Sourced from Process 63 See BCW68G for Characteristics3ABSOLUTE MAXIMUM RATINGS 2(TA = 25C, unless otherwise specified.)1Symbol Parameter Value UnitSOT-23VCEO Collect
..5. Size:146K cdil
bsr15 bsr16.pdf 
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD Package BSR15BSR16SILICON PLANAR EPITAXIAL TRANSISTORSPNP silicon transistorsMarkingBSR15 = T7BSR16 = T8Pin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSBSR15 BSR16Collectorbase voltage (open emitter) VCB0 max. 60 6
..6. Size:800K kexin
bsr16.pdf 
SMD Type TransistorsPNP TransistorsBSR16 (KSR16)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=-0.8A Collector Emitter Voltage VCEO=-60V1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60
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