DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D109BSR30; BSR31; BSR33PNP medium power transistors1999 Apr 26Product specificationSupersedes data of 1997 Apr 01Philips Semiconductors Product specificationPNP medium power transistors BSR30; BSR31; BSR33FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 80 V).1 emitter2 collectorAP

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D109BSR30; BSR31; BSR33PNP medium power transistorsProduct data sheet 2004 Dec 13Supersedes data of 1999 Apr 26NXP Semiconductors Product data sheetPNP medium power transistors BSR30; BSR31; BSR33FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 80 V).1 emitter2 collectorAPPLICATIO

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

SOT89 PNP SILICON PLANARBSR31MEDIUM POWER TRANSISTORSBSR33ISSUE 3 FEBRUARY 1996COMPLEMENTARY TYPE BSR31 BSR41CBSR33 BSR43PARTMARKING DETAILS BSR31 BR2BSR33 BR4ECBSOT89ABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL BSR31 BSR33 UNITCollector-Base Voltage VCBO -70 -90 VCollector-Emitter Voltage VCEO -60 -80 VEmitter-Base Voltage VEBO -5 V

A Product Line ofDiodes IncorporatedBSR3380V PNP MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data BVCEO > -80V Case: SOT89 IC = -1A High Continuous Current Case Material: Molded Plastic, Green Molding Compound Low saturation voltage VCE(sat)

BRS33TRANSISTOR (PNP) SOT-89-3L FEATURES Low Voltage1. BASE High Current2. COLLECTOR Complement to BSR43 AAPLICATIONS 3. EMITTER Medium Power Transistor MARKING:BR4 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -90 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collect