MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BSS64LT1/DDriver TransistorBSS64LT1COLLECTORNPN Silicon31BASE23EMITTER1MAXIMUM RATINGS2Rating Symbol Value UnitCollectorEmitter Voltage VCEO 80 VdcCASE 31808, STYLE 6SOT23 (TO236AB)CollectorBase Voltage VCBO 120 VdcEmitterBase Voltage VEBO 5.0 VdcCollector Current Contin

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088BSS64NPN high-voltage transistor1999 Apr 15Product specificationSupersedes data of 1997 Sep 04Philips Semiconductors Product specificationNPN high-voltage transistor BSS64FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION High voltage (max. 80 V).1 base2 emitterAPPLICATIONS3 collector Hig

BSS64CESOT-23BMark: U3NPN General Purpose AmplifierThis device is designed for general purpose high voltage amplifiersand gas discharge display driving. Sourced from Process 16.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 80 VVCBO Collector-Base Voltage 120 VVEBO Emitter-Base Voltage 5.0 VIC Col

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

BCX 41BSS 64NPN Silicon AF and Switching Transistor BCX 41BSS 64 High breakdown voltage Low collector-emitter saturation voltage Complementary types: BCX 42, BSS 63 (PNP)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3BCX 41 EKs Q62702-C1659 B E C SOT-23BSS 64 AMs Q62702-S535Maximum RatingsParameter Symbol Values UnitBSS 64 BCX 41Collector-

BSS64LT1GDriver TransistorNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSwww.onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGS1Rating Symbol Value UnitBASECollector-Emitter Voltage VCEO 80 VdcCollector-Base Voltage VCBO 120 Vdc2EMITTEREmitter-Base Voltage VEBO 5.0 VdcCollector Current - Continuous IC 100 mAdc3THERMAL CHARAC

SEMICONDUCTOR BSS64TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.EL B LDIM MILLIMETERS_+2.93 0.20AB 1.30+0.20/-0.15MAXIMUM RATING (Ta=25 )C 1.30 MAX23 D 0.45+0.15/-0.05CHARACTERISTIC SYMBOL RATING UNITE 2.40+0.30/-0.201G 1.90VCBOCollector-Base Voltage 120 VH 0.95J 0.13+0.10/-0.05VCEOCollector-Em