BT2483T - описание и поиск аналогов

PN2484 MMBT2484 C E C TO-92 SOT-23 B B E Mark 1U NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1 to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Volt

MMBT2484LT1G Low Noise Transistor NPN Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 BASE Collector-Emitter Voltage VCEO 60 Vdc Collector-Base Voltage VCBO 60 Vdc 2 Emitter-Base Voltage VEBO 6.0 Vdc EMITTER Collector Current - Continuous IC 100 mAdc THERMAL CH

MMBT2484LT1G Low Noise Transistor NPN Silicon Features www.onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 MAXIMUM RATINGS 1 BASE Rating Symbol Value Unit Collector-Emitter Voltage VCEO 60 Vdc 2 Collector-Base Voltage VCBO 60 Vdc EMITTER Emitter-Base Voltage VEBO 6.0 Vdc Collector Current - Continuous IC 100 mAdc 3 THERMAL C

MMBT2484LT1G Low Noise Transistor NPN Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 BASE Collector-Emitter Voltage VCEO 60 Vdc Collector-Base Voltage VCBO 60 Vdc 2 Emitter-Base Voltage VEBO 6.0 Vdc EMITTER Collector Current - Continuous IC 100 mAdc THERMAL CH

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR CMBT2484 SOT23 PIN CONFIGURATION (NPN) 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING 1U 1 2 LOW NOISE TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C) DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 60 V Collector -Emitter Voltage VCEO 60 V Emi