Биполярный транзистор BT2484T - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BT2484T
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.5 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
Предельная температура PN-перехода (Tj): 175 °C
Граничная частота коэффициента передачи тока (ft): 60 MHz
Ёмкость коллекторного перехода (Cc): 6 pf
Статический коэффициент передачи тока (hfe): 200
Корпус транзистора: TO18
BT2484T Datasheet (PDF)
mmbt2484.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT2484LT1/DLow Noise TransistorMMBT2484LT1COLLECTORNPN Silicon31BASE23EMITTERMAXIMUM RATINGS1Rating Symbol Value Unit2CollectorEmitter Voltage VCEO 60 VdcCASE 31808, STYLE 6CollectorBase Voltage VCBO 60 VdcSOT23 (TO236AB)EmitterBase Voltage VEBO 6.0 VdcCollector Current
mmbt2484 pn2484.pdf
PN2484 MMBT2484CEC TO-92SOT-23 BBEMark: 1UNPN General Purpose AmplifierThis device is designed for low noise, high gain, general purposeamplifier applications at collector currents from 1 to 50 mA.Sourced from Process 07. See 2N5088 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Volt
mmbt2484lt1-d.pdf
MMBT2484LT1GLow Noise TransistorNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit 1BASECollector-Emitter Voltage VCEO 60 VdcCollector-Base Voltage VCBO 60 Vdc2Emitter-Base Voltage VEBO 6.0 VdcEMITTERCollector Current - Continuous IC 100 mAdcTHERMAL CH
mmbt2484lt1g.pdf
MMBT2484LT1GLow Noise TransistorNPN SiliconFeatureswww.onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantCOLLECTOR3MAXIMUM RATINGS1BASERating Symbol Value UnitCollector-Emitter Voltage VCEO 60 Vdc2Collector-Base Voltage VCBO 60 VdcEMITTEREmitter-Base Voltage VEBO 6.0 VdcCollector Current - Continuous IC 100 mAdc3THERMAL C
mmbt2484lt3g.pdf
MMBT2484LT1GLow Noise TransistorNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit 1BASECollector-Emitter Voltage VCEO 60 VdcCollector-Base Voltage VCBO 60 Vdc2Emitter-Base Voltage VEBO 6.0 VdcEMITTERCollector Current - Continuous IC 100 mAdcTHERMAL CH
cmbt2484.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON EPITAXIAL TRANSISTOR CMBT2484SOT23PIN CONFIGURATION (NPN)1 = BASE2 = EMITTER3 = COLLECTOR3MARKING: 1U12LOW NOISE TRANSISTORABSOLUTE MAXIMUM RATINGS (Ta=25 deg C)DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 60 VCollector -Emitter Voltage VCEO 60 VEmi
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050