Справочник транзисторов. BU2520D

 

Биполярный транзистор BU2520D - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: BU2520D
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 125 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 1500 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 800 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 10 A
   Предельная температура PN-перехода (Tj): 150 °C
   Ёмкость коллекторного перехода (Cc): 85 pf
   Статический коэффициент передачи тока (hfe): 5
   Корпус транзистора: TO218

 Аналоги (замена) для BU2520D

 

 

BU2520D Datasheet (PDF)

 ..1. Size:52K  philips
bu2520d 1.pdf

BU2520D
BU2520D

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520D GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plasticenvelope intended for use in horizontal deflection circuits of large screen colour television receivers.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITV

 ..2. Size:122K  inchange semiconductor
bu2520d.pdf

BU2520D
BU2520D

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU2520D DESCRIPTION With TO-3PN package High voltage,high speed Built-in damper diode APPLICATIONS For use in horizontal deflection circuits of large screen colour TV receivers. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and

 0.1. Size:79K  philips
bu2520df.pdf

BU2520D
BU2520D

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520DF GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plasticenvelope intended for use in horizontal deflection circuits of large screen colour television receivers.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. U

 0.2. Size:217K  inchange semiconductor
bu2520dx.pdf

BU2520D
BU2520D

isc Silicon NPN Power Transistor BU2520DXDESCRIPTIONHigh Switching SpeedHigh VoltageBuilt-in Ddamper DdiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor use in horizontal deflection circuits of large screencolor TV receiversABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltag

 0.3. Size:214K  inchange semiconductor
bu2520dw.pdf

BU2520D
BU2520D

isc Silicon NPN Power Transistor BU2520DWDESCRIPTIONHigh Switching SpeedHigh VoltageBuilt-in Ddamper DdiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor use in horizontal deflection circuits of large screencolor TV receiversABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltag

 0.4. Size:213K  inchange semiconductor
bu2520df.pdf

BU2520D
BU2520D

isc Silicon NPN Power Transistor BU2520DFDESCRIPTIONHigh Switching SpeedHigh VoltageBuilt-in Ddamper DdiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor use in horizontal deflection circuits of large screencolor TV receiversABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltag

Другие транзисторы... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , A1015 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

 

 
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