Справочник транзисторов. BU2520DF

 

Биполярный транзистор BU2520DF - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: BU2520DF
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 45 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 1500 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 800 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 10 A
   Предельная температура PN-перехода (Tj): 150 °C
   Ёмкость коллекторного перехода (Cc): 85 pf
   Статический коэффициент передачи тока (hfe): 5
   Корпус транзистора: SOT199

 Аналоги (замена) для BU2520DF

 

 

BU2520DF Datasheet (PDF)

 ..1. Size:79K  philips
bu2520df.pdf

BU2520DF BU2520DF

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520DF GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plasticenvelope intended for use in horizontal deflection circuits of large screen colour television receivers.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. U

 ..2. Size:213K  inchange semiconductor
bu2520df.pdf

BU2520DF BU2520DF

isc Silicon NPN Power Transistor BU2520DFDESCRIPTIONHigh Switching SpeedHigh VoltageBuilt-in Ddamper DdiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor use in horizontal deflection circuits of large screencolor TV receiversABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltag

 7.1. Size:52K  philips
bu2520d 1.pdf

BU2520DF BU2520DF

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520D GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plasticenvelope intended for use in horizontal deflection circuits of large screen colour television receivers.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITV

 7.2. Size:217K  inchange semiconductor
bu2520dx.pdf

BU2520DF BU2520DF

isc Silicon NPN Power Transistor BU2520DXDESCRIPTIONHigh Switching SpeedHigh VoltageBuilt-in Ddamper DdiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor use in horizontal deflection circuits of large screencolor TV receiversABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltag

 7.3. Size:214K  inchange semiconductor
bu2520dw.pdf

BU2520DF BU2520DF

isc Silicon NPN Power Transistor BU2520DWDESCRIPTIONHigh Switching SpeedHigh VoltageBuilt-in Ddamper DdiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor use in horizontal deflection circuits of large screencolor TV receiversABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltag

 7.4. Size:122K  inchange semiconductor
bu2520d.pdf

BU2520DF BU2520DF

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU2520D DESCRIPTION With TO-3PN package High voltage,high speed Built-in damper diode APPLICATIONS For use in horizontal deflection circuits of large screen colour TV receivers. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and

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