Биполярный транзистор BU505 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BU505
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 75 W
Макcимально допустимое напряжение коллектор-база (Ucb): 1550 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 700 V
Макcимальный постоянный ток коллектора (Ic): 2.5 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 22
Корпус транзистора: TO220
BU505 Datasheet (PDF)
bu505 1.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBU505; BU505DSilicon diffused power transistors1997 Aug 13Product specificationSupersedes data of February 1996File under Discrete Semiconductors, SC06Philips Semiconductors Product specificationSilicon diffused power transistors BU505; BU505DDESCRIPTIONHigh-voltage, high-speed switchingNPN power transistor in a TO-220ABpackage. The BU
bu505.pdf
BU505High Voltage NPN MultiepitaxialFast-Switching TransistorFeatures HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED HIGH RUGGEDNESSApplications ELECTRONIC BALLASTS FOR 3FLUORESCENT LIGHTING21 SWITCH MODE POWER SUPPLIESTO-220DescriptionThe BU505 is a High Voltage NPN fastswitchingtransistor designed to be used in lightingapplication, like el
bu505.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor BU505DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V(Min.)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of color TVreceivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA
bu505f.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBU505F; BU505DFSilicon diffused power transistors1997 Aug 13Product specificationSupersedes data of December 1991File under Discrete Semiconductors, SC06Philips Semiconductors Product specificationSilicon diffused power transistors BU505F; BU505DFDESCRIPTIONHigh-voltage, high-speed,glass-passivated NPN powertransistor in a SOT186 packa
bu505d.pdf
isc Silicon NPN Power Transistor BU505DDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V(Min.)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of color TVreceivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV C
bu505f.pdf
isc Silicon NPN Power Transistor BU505FDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V(Min.)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of color TVreceivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV C
bu505df.pdf
isc Silicon NPN Power Transistor BU505DFDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V(Min.)CEO(SUS)High Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of color TVreceivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050