BU508L. Аналоги и основные параметры
Наименование производителя: BU508L
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 125 W
Макcимально допустимое напряжение коллектор-база (Ucb): 1500 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 700 V
Макcимальный постоянный ток коллектора (Ic): 8 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 3 MHz
Ёмкость коллекторного перехода (Cc): 125 pf
Статический коэффициент передачи тока (hFE): 5
Корпус транзистора: TO3
Аналоги (замена) для BU508L
- подборⓘ биполярного транзистора по параметрам
BU508L даташит
9.1. Size:45K philips
bu508df.pdf 
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DF GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope with integrated efficiency diode, primarily for use in horizontal deflection circuits of colour television receivers. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collec
9.2. Size:48K philips
bu508af 2.pdf 
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AF GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope, primarily for use in horizontal deflection circuits of colour television receivers. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VB
9.3. Size:46K philips
bu508dx.pdf 
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DX GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT399 envelope with integrated efficiency diode, primarily for use in horizontal deflection circuits of colour television receivers. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collec
9.4. Size:50K philips
bu508ax.pdf 
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AX GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT399 envelope, primarily for use in horizontal deflection circuits of colour television receivers. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VB
9.5. Size:58K philips
bu508dw.pdf 
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DW GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a plastic envelope with integrated efficiency diode, primarily for use in horizontal deflection circuits of colour television receivers. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter vo
9.6. Size:61K philips
bu508aw.pdf 
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AW GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a plastic envelope, primarily for use in horizontal deflection circuits of colour television receivers. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1500
9.7. Size:80K st
bu208d bu508d bu508dfi.pdf 
BU208D BU508D/BU508DFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS BU208D AND BU508DFI ARE STM PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE TO-3 (U.L. FILE # E81734 (N) JEDEC TO-3 METAL CASE 1 NPN TRANSISTOR WITH INTEGRATED 2 FREEWHEELING DIODE APPLICATIONS HORIZONTAL DEFLECTION FOR COLOUR TV 3 3 DESCRIPTION 2 2 1 1 T
9.8. Size:245K st
bu208a bu508a bu508afi.pdf 
BU208A BU508A/BU508AFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY (> 1500 V) FULLY INSULATED PACKAGE (U.L. TO-3 COMPLIANT) FOR EASY MOUNTING 1 APPLICATIONS 2 HORIZONTAL DEFLECTION FOR COLOUR TV DESCRIPTION The BU208A, BU508A and BU508AFI are manufactured using Multiepitaxial Mesa 3 3 technolo
9.9. Size:91K st
bu508a.pdf 
BU208A/508A/508AFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N) TO-3 JEDEC TO-3 METAL CASE. 1 APPLICATIONS 2 HORIZONTAL DEFLECTION FOR COLOUR TV DESCRIPTION The BU208A, BU508A and BU508AFI are manufactured using Multiepitaxial Mesa 3 3 technology for c
9.10. Size:236K st
bu208a bu508a.pdf 
BU208A BU508A/BU508AFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY (> 1500 V) FULLY INSULATED PACKAGE (U.L. TO-3 COMPLIANT) FOR EASY MOUNTING 1 APPLICATIONS 2 HORIZONTAL DEFLECTION FOR COLOUR TV DESCRIPTION The BU208A, BU508A and BU508AFI are manufactured using Multiepitaxial Mesa 3 3 technolo
9.11. Size:414K st
bu508dfi.pdf 
BU508DFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY ( > 1500 V ) NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING APPLICATIONS 3 HORIZONTAL DEFLECTION FOR COLOUR 2 TV UP TO 25" 1 DESCRIPTION ISOWATT218 The BU508DFI is manufactured using
9.12. Size:211K st
bu508af.pdf 
BU508AF High voltage NPN power transistor for standard definition CRT display Features State-of-the-art technology Diffused collector Enhanced generation Stable performances versus operating temperature variation Low base-drive requirement 3 2 Tight hFE range at operating collector current 1 High ruggedness ISOWATT218FX Fully insulated power pa
9.13. Size:75K st
bu208a bu508a .pdf 
BU208A BU508A/BU508AFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS STM PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N) TO-3 JEDEC TO-3 METAL CASE. 1 APPLICATIONS 2 HORIZONTAL DEFLECTION FOR COLOUR TV DESCRIPTION The BU208A, BU508A and BU508AFI are manufactured using Multiepitaxial Mesa 3 3 technology f
9.14. Size:211K st
bu508aw.pdf 
BU508AW High voltage NPN power transistor for standard definition CRT display Features State-of-the-art technology Diffused collector Enhanced generation Stable performances versus operating temperature variation Low base-drive requirement 3 Tight hFE range at operating collector current 2 1 High ruggedness TO-247 semi-insulated power package T
9.15. Size:96K st
bu208d bu508d.pdf 
BU208D/508D/508DFI HIGH VOLTAGE FASTSWITCHING NPN POWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N) TO-3 JEDEC TO-3 METAL CASE NPN TRANSISTOR WITH INTEGRATED 1 FREEWHEELING DIODE 2 APPLICATIONS HORIZONTAL DEFLECTION FOR COLOUR TV DESCRIPTION 3 3 The BU208D, BU508D and BU508DFI are 2 2
9.16. Size:47K fairchild semi
bu508af.pdf 
BU508AF TV Horizontal Output Applications TO-3PF 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 5 A ICP *Collector Current (Pulse) 1
9.17. Size:78K utc
bu508afi.pdf 
UTC BU508 AFI NPN EPITAXIAL SILICON TRANSISTOR SILICON DIFFUSED POWER TO-3PML TRANSISTOR 1. BASE 2. COLLECTOR 3. EMITTER DESCRIPTION The UTC BU508AFI is high voltage, high speed switching NPN transistors in a plastic envelope, primarily for use in horizontal deflection circuites of colour television receivers. 1 2 3 Features * TV color horizontal deflection. * With TO-3P
9.18. Size:228K comset
bu508df.pdf 
NPN BU508DF SILICON DIFFUSED POWER TRANSISTORS SILICON DIFFUSED POWER TRANSISTORS The BU508DF is NPN transistors in a fully isolated SOT199 envelope (with integrated efficiency diode for the BU508DF). They are a high voltage, high speed switching and they are intended for use in horizontal deflexion circuits of colour television receivers. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value U
9.19. Size:264K cdil
bu508a.pdf 
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR BU508A TO- 3PN Non Isolated Plastic Package Color TV Horizontal Output Application (No Damper Diode) ABSOLUTE MAXIMUM RATINGS (Ta=25 C Unless Specified Otherwise ) DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 1500 V Collector -Emitter V
9.20. Size:118K cdil
bu508at.pdf 
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR POWER TRANSISTOR BU508AT TO-220 Plastic Package High Voltage, High-Speed Switching Transistor Intended for use in Horizontal Deflection Circuits of Colour Televisions ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector Emitter Voltage VCES 1500 V VCEO Collector
9.21. Size:85K cdil
bu508f af df.pdf 
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN POWER TRANSISTORS BU508F, BU508AF, BU508DF TO- 3P Fully Isolated Plastic Package B C E Fast Switching, High Voltage Devices for use in Horizontal Deflection Circuits of Colour TV ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Emitter Voltage VCES 1500 V Collector -Emitt
9.22. Size:261K nell
bu508c bu508b.pdf 
RoHS RoHS BU508 Series SEMICONDUCTOR Nell High Power Products High voltage NPN Power transistor 8A, 1500V FEATURES C Stable performance vs. operating temperature variation High ruggedness Tigth hFE range at operating collector current B C TO-3P and TO-247AB package which can be E TO-247AB TO-3PB installed to the heat sink with one screw (BU508C) (BU805B) (2) APPLICATI
9.23. Size:1298K cn sps
bu508at4tl.pdf 
BU508AT4TL Silicon NPN Power Transistor DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V (Min) CEO(SUS) High Power Dissipation- P = 125W@T = 25 D C APPLICATIONS Designed for use in large screen color deflection circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector- Emitter Voltage(V = 0) 1500 V CES BE V Collector-Emitter Vo
9.24. Size:426K cn sptech
bu508a.pdf 
SPTECH Product Specification SPTECH Silicon NPN Power Transistor BU508A DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V (Min) CEO(SUS) High Power Dissipation- P = 125W@T = 25 D C APPLICATIONS Designed for use in large screen color deflection circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector- Emitter Voltage(V = 0) 1500 V
9.25. Size:215K inchange semiconductor
bu508.pdf 
isc Silicon NPN Power Transistor BU508 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V (Min) CEO(SUS) High Power Dissipation- P = 125W@T = 25 D C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in large screen color deflection circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER V
9.26. Size:122K inchange semiconductor
bu508d.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU508D DESCRIPTION With TO-3PN package High voltage Built-in damper diode APPLICATIONS For use in large screen colour deflection circuits. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maxi
9.27. Size:42K inchange semiconductor
bu508df.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU508DF DESCRIPTION With TO-3PFa package High voltage,high speed With integrated efficiency diode APPLICATIONS For use in horizontal deflection circuits of colour TV receivers PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER CONDIT
9.29. Size:215K inchange semiconductor
bu508fi.pdf 
isc Silicon NPN Power Transistor BU508FI DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V
9.30. Size:217K inchange semiconductor
bu508dx.pdf 
isc Silicon NPN Power Transistor BU508DX DESCRIPTION High Voltage-V = 1500V(Min.) CES Collector Current- I = 8.0A C Built-in Integrated Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in large screen color deflection circuits . ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collect
9.31. Size:216K inchange semiconductor
bu508dfi.pdf 
isc Silicon NPN Power Transistor BU508DFI DESCRIPTION High Voltage-V = 1500V(Min.) CES Collector Current- I = 8.0A C Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in large screen color deflection circuits . ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-
9.32. Size:216K inchange semiconductor
bu508ax.pdf 
isc Silicon NPN Power Transistor BU508AX DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V
9.33. Size:214K inchange semiconductor
bu508dw.pdf 
isc Silicon NPN Power Transistor BU508DW DESCRIPTION High Voltage-V = 1500V(Min.) CES Collector Current- I = 8.0A C Built-in Integrated Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in large screen color deflection circuits . ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collect
9.34. Size:211K inchange semiconductor
bu508at.pdf 
isc Silicon NPN Power Transistor BU508AT DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V (Min) CEO(SUS) High Power Dissipation- P = 100W@T = 25 D C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in large screen color deflection circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER
9.35. Size:87K inchange semiconductor
bu508a-m.pdf 
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU508A-M DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= 800V (Min) High Power Dissipation- PD= 100W@TC= 25 APPLICATIONS Designed for horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector- Emitter Voltage(V = 0)
9.36. Size:134K inchange semiconductor
bu508af.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU508AF DESCRIPTION With TO-3PFa package High voltage High speed switching APPLICATIONS For use in horizontal deflection circuits of high resolution monitors PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT
9.37. Size:214K inchange semiconductor
bu508afi.pdf 
isc Silicon NPN Power Transistor BU508AFI DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V
9.38. Size:214K inchange semiconductor
bu508aw.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor BU508AW DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL
9.39. Size:218K inchange semiconductor
bu508dr.pdf 
isc Silicon NPN Power Transistor BU508DR DESCRIPTION High Voltage Capability High Current Capability Fast Switching Speed Built-in Integrated Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in large screen color deflection circuits . ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V
Другие транзисторы: BU508AXI, BU508D, BU508DF, BU508DFI, BU508DR, BU508DRF, BU508DXI, BU508FI, BC546, BU522, BU522A, BU522B, BU526, BU526A, BU526A-4, BU526A-5, BU526A-6
