BU806F - описание и поиск аналогов

 ..1. Size:212K  inchange semiconductor
 bu806f.pdf 

isc Silicon NPN Darlington Power Transistor BU806F DESCRIPTION High voltage High switching speed Low saturation voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This Darlington transistor is a high voltage ,high speed device for use in horizontal deflection circuits in TV s and CRT s ABSOLUT

 0.1. Size:209K  inchange semiconductor
 bu806fi.pdf 

isc Silicon NPN Darlington Power Transistor BU806FI DESCRIPTION High voltage High switching speed Low saturation voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This Darlington transistor is a high voltage ,high speed device for use in horizontal deflection circuits in TV s and CRT s ABSOLU

 9.1. Size:104K  motorola
 bu806rev.pdf 

Order this document MOTOROLA by BU806/D SEMICONDUCTOR TECHNICAL DATA BU806 NPN Darlington Power Transistor 8.0 AMPERE This Darlington transistor is a high voltage, high speed device for use in horizontal DARLINGTON deflection circuits in TV s and CRT s. NPN POWER High Voltage VCEV = 330 or 400 V TRANSISTORS Fast Switching Speed 60 WATTS tc = 1.0 s (max) 200 VO

 9.2. Size:57K  st
 bu806 bu807.pdf 

BU806 BU807 MEDIUM VOLTAGE NPN FAST SWITCHING DARLINGTON TRANSISTORS STMicroelectronics PREFERRED SALESTYPES NPN DARLINGTONS LOW BASE-DRIVE REQUIREMENTS INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION HORIZONTAL DEFLECTION FOR 3 2 MONOCHROME TVs 1 DESCRIPTION TO-220 The devices are silicon Epitaxial Planar NPN power transistors in Darlington configu

 9.3. Size:41K  fairchild semi
 bu806-f.pdf 

BU806/807 High Voltage & Fast Switching Darlington Transistor Using In Horizontal Output Stages of 110 Crt Video Displays BUILT-IN SPEED-UP Diode Between Base and Emitter TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base V

 9.4. Size:39K  fairchild semi
 bu806 bu807.pdf 

BU806/807 High Voltage & Fast Switching Darlington Transistor Using In Horizontal Output Stages of 110 Crt Video Displays BUILT-IN SPEED-UP Diode Between Base and Emitter TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base V

 9.5. Size:54K  samsung
 bu806 bu807.pdf 

NPN EPITAXIAL BU806/807 SILICON DARLINGTON TRANSISTOR FAST SWITCHING DARLINGTON TO-220 TRANSISTOR HIGH VOLTAGE DARLINGTON TRANSISTOR USING IN HORIZONTAL OUTPUT STAGES OF 110 CTR VIDEO DISPLAYS BUILT-IN SPEED-UP Diode Between Base and Emitter ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage BU806 VCBO 400 V 1.Base 2.Collector 3.Emitter BU807

 9.6. Size:105K  inchange semiconductor
 bu806.pdf 

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BU806 DESCRIPTION High Voltage VCEV= 400V(Min) Low Saturation Voltage- VCE(sat)= 1.5V(Max)@ IC= 5A APPLICATIONS Designed for use in horizontal deflection circuits in TV s and CRT s. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Vol