BU941ZT - описание и поиск аналогов

 ..1. Size:89K  st
 bu941zt bu941ztfp bub941zt.pdf 

BU941ZT/BU941ZTFP BUB941ZT HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON VERY RUGGED BIPOLAR TECHNOLOGY BUILT IN CLAMPING ZENER HIGH OPERATING JUNCTION TEMPERATURE WIDE RANGE OF PACKAGES SURFACE-MOUNTING D2PAK (TO-263) 3 3 POWER PACKAGE IN TUBE (NO SUFFIX) 2 2 OR IN TAPE & REEL (SUFFIX T4 ) 1 1 TO-220 TO-220FP APPLICATIONS HIGH RUGGEDNESS ELECTRONIC I

 ..2. Size:211K  inchange semiconductor
 bu941zt.pdf 

isc Silicon NPN Power Transistor BU941ZT DESCRIPTION High Voltage DARLINGTON Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High ruggedness electronic ignitions High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 500 V CBO V Collector-Emitter Voltage

 0.1. Size:413K  st
 bu941ztfp-zt bub941zt.pdf 

BU941ZT/BU941ZTFP BUB941ZT HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON VERY RUGGED BIPOLAR TECHNOLOGY BUILT IN CLAMPING ZENER HIGH OPERATING JUNCTION TEMPERATURE WIDE RANGE OF PACKAGES SURFACE-MOUNTING D2PAK (TO-263) 3 3 POWER PACKAGE IN TUBE (NO SUFFIX) 2 2 OR IN TAPE & REEL (SUFFIX "T4") 1 1 TO-220 TO-220FP APPLICATIONS HIGH RUGGEDNESS ELECTRONIC IGNITI

 8.1. Size:286K  1
 bu941zl bu941zg.pdf 

UNISONIC TECHNOLOGIES CO., LTD BU941Z NPN SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION 1 TO-3P COIL DRIVER FEATURES 1 TO-220 * NPN Darlington * Integrated antiparallel collector-emitter diode APPLICATIONS 1 * High ruggedness electric ignitions TO-263 INTERNAL SCHEMATIC DIAGRAM (2) C B(1) (3) E ORDERING INFORMATION Ordering Number

 8.2. Size:247K  cystek
 bu941zle3.pdf 

Spec. No. C660E3 Issued Date 2014.01.09 CYStech Electronics Corp. Revised Date Page No. 1/6 NPN Epitaxial Planar Transistor BVCEO 350V BU941ZLE3 IC 15A VCESAT(MAX) 1.6V Features High BVCEO Low VCE(SAT) High current capability Built-in clamping zener Pb-free lead plating package Applications High ruggedness electronic ignitions Equivalent

 8.3. Size:221K  cystek
 bu941ze3.pdf 

Spec. No. C660E3 Issued Date 2010.02.03 CYStech Electronics Corp. Revised Date Page No. 1/5 NPN Epitaxial Planar Transistor BVCEO 350V BU941ZE3 IC 15A RCESAT(MAX) 0.18 Features High BVCEO Low VCE(SAT) High current capability Built-in clamping zener Pb-free lead plating package Applications High ruggedness electronic ignitions Equivale

 8.4. Size:242K  cystek
 bu941zf3.pdf 

Spec. No. C660F3 Issued Date 2010.10.01 CYStech Electronics Corp. Revised Date 2014.02.13 Page No. 1/6 NPN Epitaxial Planar Transistor BU941ZF3 Features High BVCEO Low VCE(SAT) High current capability Built-in clamping zener Pb-free lead plating package Applications High ruggedness electronic ignitions Equivalent Circuit Outline TO-263

 8.5. Size:220K  cystek
 bu941zfp.pdf 

Spec. No. C660FP Issued Date 2008.05.20 CYStech Electronics Corp. Revised Date Page No. 1/5 NPN Epitaxial Planar Transistor BU941ZFP Features High BVCEO Low VCE(SAT) High current capability Built-in clamping zener Pb-free package Applications High ruggedness electronic ignitions Equivalent Circuit Outline BU941ZFP TO-220FP C B E B

 8.6. Size:243K  cystek
 bu941zp3.pdf 

Spec. No. C660P3 Issued Date 2008.07.22 CYStech Electronics Corp. Revised Date 2011.01.04 Page No. 1/5 NPN Epitaxial Planar Transistor BVCEO 350V IC 15A BU941ZP3 VCESAT(MAX) 2V @12A Features High BVCEO Low VCE(SAT) High current capability Built-in clamping zener Pb-free lead plating package Applications High ruggedness electronic ignitions

 8.7. Size:235K  inchange semiconductor
 bu941zl.pdf 

isc Silicon NPN Darlington Power Transistor BU941ZL DESCRIPTION Built In Clamping Zener High Operating Junction Temperature Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High ruggedness electric ignitions ABSOLUTE MAXIMUM RATINGS(TB B=25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Emitter Voltage 350 V CEO VB Emitter-Base

 8.8. Size:226K  inchange semiconductor
 bu941zpfi.pdf 

isc Silicon NPN Darlington Power Transistor BU941ZPFI DESCRIPTION Collector-Emitter Sustaining Voltage- V = 350V(Min.) CEO(SUS) High Reliability Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High ruggedness electronic ignitions High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS(T

 8.9. Size:218K  inchange semiconductor
 bu941zp.pdf 

isc Silicon NPN Darlington Power Transistor BU941ZP DESCRIPTION Built In Clamping Zener High Operating Junction Temperature Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in automotive environment as electronic ignition power actuators. ABSOLUTE MAXIMUM RATINGS(TB B=25 ) a SYMBOL PARAMETER VALUE UNIT V Colle