Биполярный транзистор BUH315 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BUH315
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 50 W
Макcимально допустимое напряжение коллектор-база (Ucb): 1500 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 700 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
Макcимальный постоянный ток коллектора (Ic): 10 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 5.5
Корпус транзистора: ISOWATT218
BUH315 Datasheet (PDF)
buh315.pdf
BUH315HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE(U.L. FILE # E81734 (N)).APPLICATIONS: HORIZONTAL DEFLECTION FOR COLOUR3TV2 SWITCH MODE POWER SUPPLIES1ISOWATT218DESCRIPTIONThe BUH315 is manufactured using MultiepitaxialMesa technology for cost-effective highperform
buh315.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUH315 DESCRIPTION With TO-3PML package High voltage High speed switching APPLICATIONS Horizontal deflection for color TV Switch mode power supplies. PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute maximum ratings(Ta=25)
buh315dfh.pdf
BUH315DFHHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR NEW Fully Plastic TO-220 for HIGHVOLTAGE APPLICATIONS HIGH VOLTAGE CAPABILITY ( > 1500 V ) FULLY INSULATED PACKAGE (U.L.COMPLIANT) FOR EASY MOUNTING NPN TRANSISTOR WITH INTEGRATEDFREEWHEELING DIODE CREEPAGE DISTANCE PATH > 4 mmAPPLICATIONS HORIZONTAL DEFLECTION FOR COLOURTVS TO-220FHDESCRIPTION The dev
buh315d.pdf
BUH315DHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE(U.L. FILE # E81734 (N)) NPN TRANSISTOR WITH INTEGRATEDFREEWHEELING DIODE.APPLICATIONS3 HORIZONTAL DEFLECTION FOR COLOUR2TV1DESCRIPTIONISOWATT218The BUH315D is manufactured usingMultiepitaxial Mesa technology for cos
buh315d.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUH315D DESCRIPTION High Switching Speed High Voltage Built-in Integrated Diode APPLICATIONS Designed for use in horizontal deflection circuits in TVs and monitors. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 1500 V VCEO Collector-Emi
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2N722
History: 2N722
Список транзисторов
Обновления
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