Биполярный транзистор BUL146F - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BUL146F
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 40 W
Макcимально допустимое напряжение коллектор-база (Ucb): 700 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 9 V
Макcимальный постоянный ток коллектора (Ic): 6 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 14 MHz
Ёмкость коллекторного перехода (Cc): 150 pf
Статический коэффициент передачи тока (hfe): 14
Корпус транзистора: TO220F
BUL146F Datasheet (PDF)
bul146g bul146fg.pdf
BUL146G, BUL146FGSWITCHMODEt NPNBipolar Power TransistorFor Switching Power Supply ApplicationsThe BUL146G / BUL146FG have an applications specificstate-of-the-art die designed for use in fluorescent electric lamphttp://onsemi.comballasts to 130 W and in Switchmode Power supplies for all types ofelectronic equipment.POWER TRANSISTORFeatures8.0 AMPERES Improved Efficie
bul146re.pdf
Order this documentMOTOROLAby BUL146/DSEMICONDUCTOR TECHNICAL DATADesigner's Data SheetBUL146*SWITCHMODEBUL146F*NPN Bipolar Power Transistor*Motorola Preferred DeviceFor Switching Power Supply ApplicationsThe BUL146/BUL146F have an applications specific stateoftheart die designedPOWER TRANSISTORfor use in fluorescent electric lamp ballasts to 130 Watts a
bul147re.pdf
Order this documentMOTOROLAby BUL147/DSEMICONDUCTOR TECHNICAL DATADesigner's Data SheetBUL147*SWITCHMODEBUL147F*NPN Bipolar Power Transistor*Motorola Preferred DeviceFor Switching Power Supply ApplicationsPOWER TRANSISTORThe BUL147/BUL147F have an applications specific stateoftheart die designed8.0 AMPERESfor use in electric fluorescent lamp ballasts t
bul1403ed.pdf
BUL1403EDHIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR INTEGRATED ANTISATURATION ANDPROTECTION NETWORK INTEGRATED ANTIPARALLEL COLLECTOREMITTER DIODE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION VERY HIGH SWITCHING SPEED32 ARCING TEST SELF PROTECTED 1APPLICATIONS TO-220 2/4 LAMPS ELECTRONIC
bul1403-.pdf
BUL1403ED HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR INTEGRATED ANTISATURATION ANDPROTECTION NETWORK INTEGRATED ANTIPARALLEL COLLECTOREMITTER DIODE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION3 VERY HIGH SWITCHING SPEED2 ARCING TEST SELF PROTECTED1APPLICATIONSTO-220 2/4 LAMPS ELECTRONIC BAL
bul147-d.pdf
BUL147SWITCHMODEtNPN Bipolar Power TransistorFor Switching Power Supply ApplicationsThe BUL147 have an applications specific state-of-the-art diehttp://onsemi.comdesigned for use in electric fluorescent lamp ballasts to 180 Watts andin Switchmode Power supplies for all types of electronic equipment.POWER TRANSISTORFeatures8.0 AMPERES, 700 VOLTS, Improved Efficiency Due
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: BTA1036N3
History: BTA1036N3
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050