Справочник транзисторов. BUL381D

 

Биполярный транзистор BUL381D - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: BUL381D
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 70 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 800 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 9 V
   Макcимальный постоянный ток коллектора (Ic): 5 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 8
   Корпус транзистора: TO220

 Аналоги (замена) для BUL381D

 

 

BUL381D Datasheet (PDF)

 ..1. Size:205K  st
bul381d.pdf

BUL381D
BUL381D

BUL381DHIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STMicroelectronics PREFERREDSALESTYPE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION VERY HIGH SWITCHING SPEED LARGE RBSOA INTEGRATED ANTIPARALLEL 32COLLECTOR-EMITTER DIODE 1APPLICATIONS TO-220 ELECTRONIC TRANSFORMERS FORHALOGEN LAMPS

 ..2. Size:80K  jmnic
bul381d.pdf

BUL381D
BUL381D

Product Specification www.jmnic.com Silicon NPN Power Transistors BUL381D DESCRIPTION With TO-220C package High voltage capability Very high switching speed Integrated antiparallel collector-emitter diode APPLICATIONS Designed for use in lighting applications and low cost switch-mode power supplies. PINNING PIN DESCRIPTION1 Base Collector;connected to

 ..3. Size:121K  inchange semiconductor
bul381d.pdf

BUL381D
BUL381D

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUL381D DESCRIPTION With TO-220C package High voltage ,high speed Integrated antiparallel collector-emitter diode APPLICATIONS Designed for use in lighting applications and low cost switch-mode power supplies. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base

 8.1. Size:79K  st
bul381 bul382.pdf

BUL381D
BUL381D

BUL381DBUL382DHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION VERY HIGH SWITCHING SPEED LARGE RBSOA INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE 321APPLICATIONS ELECTRONIC TRANSFORMERS FORTO-220HALOGEN LAMPS ELECTRONIC

 8.2. Size:72K  st
bul381-2.pdf

BUL381D
BUL381D

BUL381BUL382 HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR STM PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION VERY HIGH SWITCHING SPEED FULLY CHARACTERISED AT 125oCAPPLICATIONS ELECTRONIC BALLASTS FOR32FLUORESCENT LIGHTING1 SWITCH MODE POWER SUPPLIESTO-220DESCRIPTIONThe BUL381 and BUL382 manufactured usin

 8.3. Size:78K  jmnic
bul381.pdf

BUL381D
BUL381D

Product Specification www.jmnic.com Silicon NPN Power Transistors BUL381 DESCRIPTION With TO-220C package High voltage capability Very high switching speed APPLICATIONS Designed for use in lighting applications and low cost switch-mode power supplies. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterLIMITING VALUES SYMB

 8.4. Size:120K  inchange semiconductor
bul381.pdf

BUL381D
BUL381D

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUL381 DESCRIPTION With TO-220C package High voltage capability Very high switching speed APPLICATIONS Designed for use in lighting applications and low cost switch-mode power supplies. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maxi

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