Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AF GENERAL DESCRIPTIONHigh-voltage, high-speed glass-passivated npn power transistor in a SOT186 envelope with electrically insulatedmounting base,intended for use in converters, inverters, switching regulators, motor control systems, etc.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

BUT11F/11AFHigh Voltage Power Switching ApplicationsTO-220F11.Base 2.Collector 3.EmitterNPN Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage: BUT11F 850 V: BUT11AF 1000 V VCEO Collector-Emitter Voltage: BUT11F 400 V: BUT11AF 450 V VEBO Emitter-Base Voltage 9 V IC Collector Current (DC

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT11AF DESCRIPTION High Voltage High Speed Switching APPLICATIONS Converters Inverters Switching regulators Motor control systems ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Em

Order this documentMOTOROLAby BUT11AF/DSEMICONDUCTOR TECHNICAL DATABUT11AFFull PakHigh Voltage NPN Power TransistorPOWER TRANSISTOR5.0 AMPERESFor Isolated Package Applications450 VOLTS40 WATTSThe BUT11AF was designed for use in line operated switching power supplies in awide range of end use applications. This device combines the latest state of the artbipolar fabric

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT11AFI DESCRIPTION High Voltage High Speed Switching APPLICATIONS Converters Inverters Switching regulators Motor control systems ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER VALUE UNITVCES Collector-Emitter Voltage VBE= 0 1000 V VCEO Collector-Emitter Voltage 450

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11APX GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-packenvelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptionaltolerance to base drive and collector current load variati

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AI GENERAL DESCRIPTIONEnhanced performance, high speed switching npn transistor in TO220AB envelope specially suited for highfrequency electronic lighting ballast applications and converters, inverters, switching regulators, motor controlsystems etc.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS T

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AI GENERAL DESCRIPTIONEnhanced performance, high speed switching npn transistor in TO220AB envelope specially suited for highfrequency electronic lighting ballast applications and converters, inverters, switching regulators, motor controlsystems etc.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS T

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AX GENERAL DESCRIPTIONHigh-voltage, high-speed glass-passivated npn power transistor in a plastic full-pack envelope intended for use inconverters, inverters, switching regulators, motor control systems, etc.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emitter volta

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AX GENERAL DESCRIPTIONHigh-voltage, high-speed glass-passivated npn power transistor in a plastic full-pack envelope intended for use inconverters, inverters, switching regulators, motor control systems, etc.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emitter volta

BUT11AHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY FAST SWITCHING SPEEDAPPLICATIONS: FLYBACK AND FORWARD SINGLE32TRANSISTOR LOW POWER CONVERTERS 1TO-220DESCRIPTION The BUT11A is a silicon multiepitaxial mesa NPNtransistor in Jedec TO-220 plastic package,particularly intended for switch

BUT11/11AHigh Voltage Power Switching ApplicationsTO-22011.Base 2.Collector 3.EmitterNPN Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage V: BUT11 850: BUT11A 1000 VCEO Collector-Emitter Voltage V: BUT11 400: BUT11A 450 VEBO Emitter-Base Voltage 9 V IC Collector Current (DC) 5 A ICP

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT11APX DESCRIPTION High Voltage High Speed Switching APPLICATIONS Converters Inverters Switching regulators Motor control systems ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER VALUE UNITVCES Collector-Emitter Voltage VBE= 0 1000 V VCEO Collector-Emitter Voltage 450

isc Silicon NPN Power Transistor BUT11AIDESCRIPTIONHigh VoltageHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSConvertersInvertersSwitching regulatorsMotor control systemsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1000 VCBOV Collector-Emitter

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT11A DESCRIPTION High Voltage High Speed Switching APPLICATIONS Converters Inverters Switching regulators Motor control systems ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitt