Справочник транзисторов. BUV26A

 

Биполярный транзистор BUV26A - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: BUV26A
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 65 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 200 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V
   Макcимальный постоянный ток коллектора (Ic): 14 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 10
   Корпус транзистора: TO220

 Аналоги (замена) для BUV26A

 

 

BUV26A Datasheet (PDF)

 ..1. Size:117K  inchange semiconductor
buv26a.pdf

BUV26A
BUV26A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUV26A DESCRIPTION With TO-220C package Low collector saturation voltage Fast switching speed APPLICATIONS For use in high frequency and efficiency converters,switching regulators and motor control PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter

 9.1. Size:57K  st
buv26.pdf

BUV26A
BUV26A

BUV26MEDIUM POWER NPN SILICON TRANSISTOR STMicroelectronics PREFERREDSALESTYPE NPN TRANSISTOR FAST SWITCHING SPEED LOW COLLECTOR EMITTER SATURATION APPLICATIONS SWITCHING REGULATORS MOTOR CONTROL 321DESCRIPTION The BUV26 is a Multiepitaxial Planar NPNTO-220Transistor in TO-220 package. It is intended foruse in high frequency and efficency converters,s

 9.2. Size:45K  onsemi
buv26-d.pdf

BUV26A
BUV26A

BUV26Switchmode Series NPNSilicon Power TransistorDesigned for high-speed applications.Featureshttp://onsemi.com Switchmode Power Supplies High Frequency Converters12 AMPERES Relay DriversNPN SILICON DriverPOWER TRANSISTORS Pb-Free Package is Available*90 VOLTS, 85 WATTSMAXIMUM RATINGS (TJ = 25C unless otherwise noted)MARKINGRating Symbol Value

 9.3. Size:107K  inchange semiconductor
buv26f af.pdf

BUV26A
BUV26A

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUV26F/AF DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 90V(Min)- BUV26F 100V(Min)- BUV26AF High Switching Speed APPLICATIONS Designed for fast switching applications such as high frequency and efficiency converters, switching regulators and motor control. ABSOLUTE

 9.4. Size:214K  inchange semiconductor
buv26.pdf

BUV26A
BUV26A

isc Silicon NPN Power Transistors BUV26DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 90V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for fast switching applications such as highfrequency and efficiency converters, switching regulatorsand motor control.ABSOLUTE MAXIMU

 9.5. Size:214K  inchange semiconductor
buv26g.pdf

BUV26A
BUV26A

isc Silicon NPN Power Transistors BUV26GDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 90V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for fast switching applications such as highfrequency and efficiency converters, switching regulatorsand motor control.ABSOLUTE MAXIM

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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