BUV48A. Аналоги и основные параметры
Наименование производителя: BUV48A
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 150 W
Макcимально допустимое напряжение коллектор-база (Ucb): 1000 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 450 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 15 A
Предельная температура PN-перехода (Tj): 200 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 5 MHz
Ёмкость коллекторного перехода (Cc): 250 pf
Статический коэффициент передачи тока (hFE): 5
Корпус транзистора: TOP3
Аналоги (замена) для BUV48A
- подборⓘ биполярного транзистора по параметрам
BUV48A даташит
..1. Size:109K st
buv48a.pdf 
BUV48A High voltage fast switching NPN power transistor Features High current capability Fast switching speed Applications Switching mode power supplies 3 Flyback and forward single transistor low power 2 1 converter TO-247 Description The device is a multiepitaxial mesa NPN Figure 1. Internal schematic diagram transistor mounted in TO-247 plastic package. I
0.1. Size:217K inchange semiconductor
buv48afi.pdf 
isc Silicon NPN Power Transistor BUV48AFI DESCRIPTION High Voltage Capability High Current Capability Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ulary suited for line-operated switc
9.1. Size:308K motorola
buv48.pdf 
Order this document MOTOROLA by BUV48/D SEMICONDUCTOR TECHNICAL DATA BUV48 BUV48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES The BUV48/BUV48A transistors are designed for high voltage, high speed, power NPN SILICON switching in inductive circuits where fall time is critical. They are particularly suited for POWER TRANSISTORS line operated switchmode applica
9.2. Size:78K st
bux-buv48.pdf 
BUX48C/BUV48C BUV48CFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES NPN TRANSISTORS HIGH VOLTAGE CAPABILITY FAST SWITCHING SPEED 1 3 APPLICATIONS 2 LINEAR AND SWITCHING INDUSTRIAL 2 1 EQUIPMENT TO-3 TO-218 DESCRIPTION The BUX48C, BUV48C and BUV48CFI are 3 silicon multiepitaxial mesa NPN transistors 2 1 mounted respectively
9.4. Size:62K st
bux-buv48-.pdf 
BUX48/48A BUV48A/V48AFI HIGH POWER NPN SILICON TRANSISTORS STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTOR HIGH VOLTAGE CAPABILITY HIGH CURRENT CAPABILITY 1 3 FAST SWITCHING SPEED 2 2 1 APPLICATIONS SWITCH MODE POWER SUPPLIES TO-3 TO-218 FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS 3 2 1 DESCRIPTION ISOWATT218 The BUX48/A, BUV48A and BUV48
9.5. Size:155K bourns
buv48-a.pdf 
BUV48, BUV48A NPN SILICON POWER TRANSISTORS Rugged Triple-Diffused Planar Construction SOT-93 PACKAGE (TOP VIEW) 15 A Continuous Collector Current B 1 1000 Volt Blocking Capability C 2 3 E Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25 C case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT BUV48 850 Colle
9.6. Size:217K inchange semiconductor
buv48i.pdf 
isc Silicon NPN Power Transistor BUV48I DESCRIPTION High Voltage Capability High Current Capability Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ulary suited for line-operated swtchmode
9.7. Size:221K inchange semiconductor
buv48fi.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor BUV48FI DESCRIPTION High Voltage Capability High Current Capability Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ulary suited fo
9.8. Size:214K inchange semiconductor
buv48cfi.pdf 
isc Silicon NPN Power Transistor BUV48CFI DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V (Min) CEO(SUS) High Current Capability Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching and industrial applications from single and three-phase mains. Absolute maximum ratings(Ta=25
9.10. Size:213K inchange semiconductor
buv48.pdf 
isc Silicon NPN Power Transistor BUV48 DESCRIPTION High Voltage Capability High Current Capability Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Inverters Solenoid and relay drivers Motor controls Deflection circuits Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VALU
9.11. Size:215K inchange semiconductor
buv48bfi.pdf 
isc Silicon NPN Power Transistor BUV48BFI DESCRIPTION Collector-Emitter Sustaining Voltage- V = 600V (Min) CEO(SUS) High Current Capability Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching and industrial applications from single and three-phase mains. Absolute maximum ratings(Ta=25
9.12. Size:214K inchange semiconductor
buv48t.pdf 
isc Silicon NPN Power Transistor BUV48T DESCRIPTION High Voltage Capability High Current Capability Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ulary suited for line-operated swtchmode
Другие транзисторы: BUV47A, BUV47AF, BUV47AFI, BUV47AP, BUV47B, BUV47FI, BUV47I, BUV48, A42, BUV48AF, BUV48AFI, BUV48B, BUV48C, BUV48CFI, BUV48CI, BUV48FI, BUV48I
