Биполярный транзистор BUV48C
Даташит. Аналоги
Наименование производителя: BUV48C
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 120
W
Макcимально допустимое напряжение коллектор-база (Ucb): 1200
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 700
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7
V
Макcимальный постоянный ток коллектора (Ic): 15
A
Предельная температура PN-перехода (Tj): 200
°C
Граничная частота коэффициента передачи тока (ft): 5
MHz
Ёмкость коллекторного перехода (Cc): 250
pf
Статический коэффициент передачи тока (hfe): 10
Корпус транзистора:
TOP3
- подбор биполярного транзистора по параметрам
BUV48C
Datasheet (PDF)
..2. Size:213K inchange semiconductor
buv48c.pdf 

isc Silicon NPN Power Transistor BUV48CDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)High Current CapabilityFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching and industrial applications fromsingle and three-phase mains.Absolute maximum ratings(Ta=25
0.1. Size:214K inchange semiconductor
buv48cfi.pdf 

isc Silicon NPN Power Transistor BUV48CFIDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)High Current CapabilityFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching and industrial applications fromsingle and three-phase mains.Absolute maximum ratings(Ta=25
9.1. Size:308K motorola
buv48.pdf 

Order this documentMOTOROLAby BUV48/DSEMICONDUCTOR TECHNICAL DATABUV48BUV48ASWITCHMODE II SeriesNPN Silicon Power Transistors15 AMPERESThe BUV48/BUV48A transistors are designed for highvoltage, highspeed, powerNPN SILICONswitching in inductive circuits where fall time is critical. They are particularly suited forPOWER TRANSISTORSlineoperated switchmode applica
9.2. Size:109K st
buv48a.pdf 

BUV48A High voltage fast switching NPN power transistorFeatures High current capability Fast switching speedApplications Switching mode power supplies3 Flyback and forward single transistor low power 21converterTO-247DescriptionThe device is a multiepitaxial mesa NPN Figure 1. Internal schematic diagramtransistor mounted in TO-247 plastic package. I
9.3. Size:78K st
bux-buv48.pdf 

BUX48C/BUV48CBUV48CFIHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES NPN TRANSISTORS HIGH VOLTAGE CAPABILITY FAST SWITCHING SPEED 1 3APPLICATIONS 2 LINEAR AND SWITCHING INDUSTRIAL 2 1EQUIPMENTTO-3 TO-218DESCRIPTION The BUX48C, BUV48C and BUV48CFI are3silicon multiepitaxial mesa NPN transistors21mounted respectively
9.4. Size:62K st
bux-buv48-.pdf 

BUX48/48ABUV48A/V48AFI HIGH POWER NPN SILICON TRANSISTORS STMicroelectronics PREFERREDSALESTYPES NPN TRANSISTOR HIGH VOLTAGE CAPABILITY HIGH CURRENT CAPABILITY1 3 FAST SWITCHING SPEED22 1APPLICATIONS SWITCH MODE POWER SUPPLIESTO-3 TO-218 FLYBACK AND FORWARD SINGLETRANSISTOR LOW POWER CONVERTERS321DESCRIPTIONISOWATT218The BUX48/A, BUV48A and BUV48
9.5. Size:155K bourns
buv48-a.pdf 

BUV48, BUV48ANPN SILICON POWER TRANSISTORS Rugged Triple-Diffused Planar ConstructionSOT-93 PACKAGE(TOP VIEW) 15 A Continuous Collector CurrentB1 1000 Volt Blocking CapabilityC 23EPin 2 is in electrical contact with the mounting base.MDTRAAAabsolute maximum ratings at 25C case temperature (unless otherwise noted)RATING SYMBOL VALUE UNITBUV48 850Colle
9.6. Size:217K inchange semiconductor
buv48i.pdf 

isc Silicon NPN Power Transistor BUV48IDESCRIPTIONHigh Voltage CapabilityHigh Current CapabilityFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ulary suited for line-operated swtchmode
9.7. Size:101K inchange semiconductor
buv48a.pdf 

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV48A DESCRIPTION High Voltage Capability High Current Capability Fast Switching Speed APPLICATIONS Designed for high-voltage,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ulary suited for line-operated swtchmode applications such as:
9.8. Size:221K inchange semiconductor
buv48fi.pdf 

INCHANGE Semiconductorisc Silicon NPN Power Transistor BUV48FIDESCRIPTIONHigh Voltage CapabilityHigh Current CapabilityFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ulary suited fo
9.9. Size:218K inchange semiconductor
buv48b.pdf 

isc Silicon NPN Power Transistor BUV48BDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 600V (Min)CEO(SUS)High Current CapabilityFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching and industrial applications fromsingle and three-phase mains.Absolute maximum ratings(Ta=25
9.10. Size:213K inchange semiconductor
buv48.pdf 

isc Silicon NPN Power Transistor BUV48DESCRIPTIONHigh Voltage CapabilityHigh Current CapabilityFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsInvertersSolenoid and relay driversMotor controlsDeflection circuitsAbsolute maximum ratings(Ta=25)SYMBOL PARAMETER VALU
9.11. Size:215K inchange semiconductor
buv48bfi.pdf 

isc Silicon NPN Power Transistor BUV48BFIDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 600V (Min)CEO(SUS)High Current CapabilityFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching and industrial applications fromsingle and three-phase mains.Absolute maximum ratings(Ta=25
9.12. Size:214K inchange semiconductor
buv48t.pdf 

isc Silicon NPN Power Transistor BUV48TDESCRIPTIONHigh Voltage CapabilityHigh Current CapabilityFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ulary suited for line-operated swtchmode
9.13. Size:217K inchange semiconductor
buv48afi.pdf 

isc Silicon NPN Power Transistor BUV48AFIDESCRIPTIONHigh Voltage CapabilityHigh Current CapabilityFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ulary suited for line-operated switc
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