Биполярный транзистор BUW132A - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BUW132A
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 125 W
Макcимально допустимое напряжение коллектор-база (Ucb): 1000 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 500 V
Макcимальный постоянный ток коллектора (Ic): 8 A
Предельная температура PN-перехода (Tj): 200 °C
Статический коэффициент передачи тока (hfe): 5
Корпус транзистора: TOP3
BUW132A Datasheet (PDF)
buw132 buw132a.pdf
isc Silicon NPN Power Transistors BUW132/ADESCRIPTION High Switching SpeedCollector-Emitter Sustaining Voltage-: V = 450V (Min)-BUW132CEO(SUS)500V (Min)-BUW132AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in very fast switching applications ininductive circuits.ABSOLUTE MAXIMUM RATINGS(T =25)a
buw132 a.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUW132/A DESCRIPTION High Switching Speed Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V (Min)-BUW132 500V (Min)-BUW132A APPLICATIONS Designed for use in very fast switching applications in inductive circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER MAX UNITBUW
buw132h.pdf
isc Silicon NPN Power Transistor BUW132HDESCRIPTION High Switching SpeedCollector-Emitter Sustaining Voltage-: V = 450VCEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in very fast switching applications ininductive circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITCollect
buw13f 1.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBUW13F; BUW13AFSilicon diffused power transistors1997 Aug 13Product specificationSupersedes data of February 1996File under Discrete Semiconductors, SC06Philips Semiconductors Product specificationSilicon diffused power transistors BUW13F; BUW13AFDESCRIPTIONHigh-voltage, high-speed,ook, halfpageglass-passivated NPN powertransistor in
buw13w buw13aw 1.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBUW13W; BUW13AWSilicon diffused power transistors1997 Aug 13Product specificationFile under Discrete Semiconductors, SC06Philips Semiconductors Product specificationSilicon diffused power transistors BUW13W; BUW13AWDESCRIPTIONHigh-voltage, high-speed,glass-passivated NPN powertransistor in a SOT429 package.geAPPLICATIONS2 Conv
buw13w.pdf
isc Silicon NPN Power Transistor BUW13WDESCRIPTIONHigh VoltageHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSConvertersInvertersSwitching regulatorsMotor control systemsABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 850 VCBOV Collector-Emitter
buw13a.pdf
isc Silicon NPN Power Transistor BUW13ADESCRIPTIONHigh VoltageHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSConvertersInvertersSwitching regulatorsMotor control systemsABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1000 VCBOV Collector-Emitter
buw131 buw131a.pdf
isc Silicon NPN Power Transistors BUW131/ADESCRIPTION High Switching SpeedCollector-Emitter Sustaining Voltage-: V = 450V (Min)-BUW131CEO(SUS)500V (Min)-BUW131AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in very fast switching applications ininductive circuits.ABSOLUTE MAXIMUM RATINGS(T =25)a
buw13 buw13a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUW13 BUW13A DESCRIPTION With TO-3PN package High voltage,high speed APPLICATIONS Converters Inverters Switching regulators Motor control systems PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(
buw13f buw13af.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUW13F BUW13AF DESCRIPTION With TO-3PFa package High voltage;high speed APPLICATIONS Converters Inverters Switching regulators Motor control systems PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 Collector3 Emitterl Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS
buw131 a.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUW131/A DESCRIPTION High Switching Speed Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V (Min)-BUW131 500V (Min)-BUW131A APPLICATIONS Designed for use in very fast switching applications in inductive circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER MAX UNITBUW
buw13f.pdf
isc Silicon NPN Power Transistor BUW13FDESCRIPTIONHigh VoltageHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSConvertersInvertersSwitching regulatorsMotor control systemsABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 850 VCBOV Collector-Emitter
buw133.pdf
isc Silicon NPN Power Transistor BUW133DESCRIPTIONHigh Switching SpeedCollector-Emitter Sustaining Voltage-: V = 450VCEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in very fast switching applications ininductive circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITCollector
buw13af.pdf
isc Silicon NPN Power Transistor BUW13AFDESCRIPTIONHigh VoltageHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSConvertersInvertersSwitching regulatorsMotor control systemsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1000 VCBOV Collector-Emitter
buw131h.pdf
isc Silicon NPN Power Transistor BUW131HDESCRIPTION High Switching SpeedCollector-Emitter Sustaining Voltage-: V = 450VCEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in very fast switching applications ininductive circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITCollect
buw13w buw13aw.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUW13W BUW13AW DESCRIPTION With TO-247 package High voltage,high speed APPLICATIONS Converters Inverters Switching regulators Motor control systems PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-247) and symbol 3 EmitterAbsolute maximum rating
buw133a.pdf
isc Silicon NPN Power Transistor BUW133ADESCRIPTIONHigh Switching SpeedCollector-Emitter Sustaining Voltage-: V = 500VCEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in very fast switching applications ininductive circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITCollecto
buw13.pdf
isc Silicon NPN Power Transistor BUW13DESCRIPTIONHigh VoltageHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSConvertersInvertersSwitching regulatorsMotor control systemsABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 850 VCBOV Collector-Emitter V
buw133 a.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUW133/A DESCRIPTION High Switching Speed Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V (Min)-BUW133 500V (Min)-BUW133A APPLICATIONS Designed for use in very fast switching applications in inductive circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER MAX UNITBUW
buw133h.pdf
isc Silicon NPN Power Transistor BUW133HDESCRIPTION High Switching SpeedCollector-Emitter Sustaining Voltage-: V = 430VCEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in very fast switching applications ininductive circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITCollect
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: F2
History: F2
Список транзисторов
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