BUW133 - описание и поиск аналогов

 ..1. Size:213K  inchange semiconductor
 buw133.pdf 

isc Silicon NPN Power Transistor BUW133 DESCRIPTION High Switching Speed Collector-Emitter Sustaining Voltage- V = 450V CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in very fast switching applications in inductive circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT Collector

 ..2. Size:105K  inchange semiconductor
 buw133 a.pdf 

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUW133/A DESCRIPTION High Switching Speed Collector-Emitter Sustaining Voltage- VCEO(SUS)= 450V (Min)-BUW133 500V (Min)-BUW133A APPLICATIONS Designed for use in very fast switching applications in inductive circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER MAX UNIT BUW

 0.1. Size:212K  inchange semiconductor
 buw133a.pdf 

isc Silicon NPN Power Transistor BUW133A DESCRIPTION High Switching Speed Collector-Emitter Sustaining Voltage- V = 500V CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in very fast switching applications in inductive circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT Collecto

 0.2. Size:215K  inchange semiconductor
 buw133h.pdf 

isc Silicon NPN Power Transistor BUW133H DESCRIPTION High Switching Speed Collector-Emitter Sustaining Voltage- V = 430V CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in very fast switching applications in inductive circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT Collect

 9.1. Size:85K  philips
 buw13f 1.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET BUW13F; BUW13AF Silicon diffused power transistors 1997 Aug 13 Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 Philips Semiconductors Product specification Silicon diffused power transistors BUW13F; BUW13AF DESCRIPTION High-voltage, high-speed, ook, halfpage glass-passivated NPN power transistor in

 9.2. Size:79K  philips
 buw13w buw13aw 1.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET BUW13W; BUW13AW Silicon diffused power transistors 1997 Aug 13 Product specification File under Discrete Semiconductors, SC06 Philips Semiconductors Product specification Silicon diffused power transistors BUW13W; BUW13AW DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT429 package. ge APPLICATIONS 2 Conv

 9.3. Size:213K  inchange semiconductor
 buw13w.pdf 

isc Silicon NPN Power Transistor BUW13W DESCRIPTION High Voltage High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Converters Inverters Switching regulators Motor control systems ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 850 V CBO V Collector-Emitter

 9.4. Size:105K  inchange semiconductor
 buw132 a.pdf 

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUW132/A DESCRIPTION High Switching Speed Collector-Emitter Sustaining Voltage- VCEO(SUS)= 450V (Min)-BUW132 500V (Min)-BUW132A APPLICATIONS Designed for use in very fast switching applications in inductive circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER MAX UNIT BUW

 9.5. Size:214K  inchange semiconductor
 buw13a.pdf 

isc Silicon NPN Power Transistor BUW13A DESCRIPTION High Voltage High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Converters Inverters Switching regulators Motor control systems ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1000 V CBO V Collector-Emitter

 9.6. Size:214K  inchange semiconductor
 buw131 buw131a.pdf 

isc Silicon NPN Power Transistors BUW131/A DESCRIPTION High Switching Speed Collector-Emitter Sustaining Voltage- V = 450V (Min)-BUW131 CEO(SUS) 500V (Min)-BUW131A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in very fast switching applications in inductive circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 9.7. Size:120K  inchange semiconductor
 buw13 buw13a.pdf 

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUW13 BUW13A DESCRIPTION With TO-3PN package High voltage,high speed APPLICATIONS Converters Inverters Switching regulators Motor control systems PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(

 9.8. Size:125K  inchange semiconductor
 buw13f buw13af.pdf 

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUW13F BUW13AF DESCRIPTION With TO-3PFa package High voltage;high speed APPLICATIONS Converters Inverters Switching regulators Motor control systems PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Collector 3 Emitter l Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS

 9.9. Size:217K  inchange semiconductor
 buw132 buw132a.pdf 

isc Silicon NPN Power Transistors BUW132/A DESCRIPTION High Switching Speed Collector-Emitter Sustaining Voltage- V = 450V (Min)-BUW132 CEO(SUS) 500V (Min)-BUW132A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in very fast switching applications in inductive circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 9.10. Size:105K  inchange semiconductor
 buw131 a.pdf 

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUW131/A DESCRIPTION High Switching Speed Collector-Emitter Sustaining Voltage- VCEO(SUS)= 450V (Min)-BUW131 500V (Min)-BUW131A APPLICATIONS Designed for use in very fast switching applications in inductive circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER MAX UNIT BUW

 9.11. Size:216K  inchange semiconductor
 buw13f.pdf 

isc Silicon NPN Power Transistor BUW13F DESCRIPTION High Voltage High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Converters Inverters Switching regulators Motor control systems ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 850 V CBO V Collector-Emitter

 9.12. Size:212K  inchange semiconductor
 buw13af.pdf 

isc Silicon NPN Power Transistor BUW13AF DESCRIPTION High Voltage High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Converters Inverters Switching regulators Motor control systems ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1000 V CBO V Collector-Emitter

 9.13. Size:214K  inchange semiconductor
 buw131h.pdf 

isc Silicon NPN Power Transistor BUW131H DESCRIPTION High Switching Speed Collector-Emitter Sustaining Voltage- V = 450V CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in very fast switching applications in inductive circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT Collect

 9.14. Size:123K  inchange semiconductor
 buw13w buw13aw.pdf 

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUW13W BUW13AW DESCRIPTION With TO-247 package High voltage,high speed APPLICATIONS Converters Inverters Switching regulators Motor control systems PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-247) and symbol 3 Emitter Absolute maximum rating

 9.15. Size:214K  inchange semiconductor
 buw13.pdf 

isc Silicon NPN Power Transistor BUW13 DESCRIPTION High Voltage High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Converters Inverters Switching regulators Motor control systems ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 850 V CBO V Collector-Emitter V

 9.16. Size:214K  inchange semiconductor
 buw132h.pdf 

isc Silicon NPN Power Transistor BUW132H DESCRIPTION High Switching Speed Collector-Emitter Sustaining Voltage- V = 450V CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in very fast switching applications in inductive circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT Collect