Биполярный транзистор BUX48B - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BUX48B
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 175 W
Макcимально допустимое напряжение коллектор-база (Ucb): 1200 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 700 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 15 A
Предельная температура PN-перехода (Tj): 200 °C
Статический коэффициент передачи тока (hfe): 30
Корпус транзистора: TO3
BUX48B Datasheet (PDF)
bux48b.pdf
isc Silicon NPN Power Transistor BUX48BDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 600V (Min)CEO(SUS)High Current CapabilityFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching and industrial applications fromsingle and three-phase mains.Absolute maximum ratings(Ta=25
bux48rev.pdf
Order this documentMOTOROLAby BUX48/DSEMICONDUCTOR TECHNICAL DATABUX48BUX48ASWITCHMODE II SeriesNPN Silicon Power Transistors15 AMPERESThe BUX 48/BUX 48A transistors are designed for highvoltage, highspeed,NPN SILICON power switching in inductive circuits where fall time is critical. They are particularlyPOWER TRANSISTORS suited for lineoperated SWITCHMODE app
bux48 a.pdf
BUX48BUX48A High voltage fast-switching NPN power transistorsFeatures NPN transistors High voltage capability High current capability Fast switching speed1Applications2 Switching mode power suppliesTO-3 Flyback and forward single transistor low power convertersFigure 1. Internal schematic diagramDescriptionThe BUX48 and BUX48A are multi epitax
bux48.pdf
NPN BUX48VERY HIGH VOLTAGE POWER TRANSISTORVERY HIGH VOLTAGE POWER TRANSISTORThe BUX48 is silicon multiepitaxial mesa NPN transistors in Jedec TO-3.They are a high voltage, high speed and they are intended for use in converters, inverter, switchingregulator, motor control systems.ABSOLUTE MAXIMUM RATINGSSymbol Ratings Value UnitVCEO Collector-Emitter Voltage IB = 0 400 VVCESM
bux48smd.pdf
BUX48SMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 400V IC = 15A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (
bux48a.pdf
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor BUX48ADESCRIPTIONHigh Voltage CapabilityHigh Current CapabilityFast Switching SpeedAPPLICATIONSDesigned for high-voltage,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ulary suited for line-operated swtchmode applications suchas:Switching regulatorsInv
bux48a.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor BUX48ADESCRIPTIONHigh Voltage CapabilityHigh Current CapabilityFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ulary suited for
bux48.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor BUX48DESCRIPTIONHigh Voltage CapabilityHigh Current CapabilityFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ulary suited for
bux48c.pdf
isc Silicon NPN Power Transistor BUX48CDESCRIPTIONHigh Voltage CapabilityFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching and industrial applications fromsingle and three-phase mains.Absolute maximum ratings(Ta=25)SYMBOL PARAMETER VALUE UNITCollector-Emitter VoltageV 1200 V
bux48a v2.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor BUX48ADESCRIPTIONHigh Voltage CapabilityHigh Current CapabilityFast Switching SpeedAPPLICATIONSDesigned for high-voltage,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ulary suited for line-operated switch mode applications suchas:Switching regulatorsInverters
Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: JE9101D
History: JE9101D
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050