Биполярный транзистор BUX77 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BUX77
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 40 W
Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 5 A
Предельная температура PN-перехода (Tj): 200 °C
Граничная частота коэффициента передачи тока (ft): 50 MHz
Статический коэффициент передачи тока (hfe): 50
Корпус транзистора: TO66
BUX77 Datasheet (PDF)
bux77.pdf
isc Silicon NPN Power Transistor BUX77DESCRIPTIONContunuous Collector Current-I = 5ACCollector Power Dissipation-: P = 40W @T = 25C CCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in switching regulators and general purposepower ampli
bux77smd.pdf
BUX77SMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 80V IC = 5A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (0.
bux78a-220m bux77a-220m.pdf
SILICON PLANAR EPITAXIAL NPN/PNP TRANSISTORS BUX77A-220M BUX78A-220M High Power Hermetic TO220 Isolated Metal Package Ideally suited for Driver Circuits, Switching and Amplifier Applications Screening Options Available BUX77A BUX78A ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) NPN PNP VCBO Collector Base Voltage 100V -100V VCEO
bux77a bux78a.pdf
SILICON PLANAR EPITAXIAL NPN/PNP TRANSISTORS BUX77A / BUX78A High Power Hermetic TO-66 Metal Package Ideally suited for Driver Circuits, Switching and Amplifier Applications Screening Options Available BUX77A BUX78A ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) NPN PNP VCBO Collector Base Voltage 100V -100V VCEO Collector Emitt
bux77asmd.pdf
BUX77ASMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 80V IC = 5A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (0
bux77a.pdf
isc Silicon NPN Power Transistor BUX77ADESCRIPTIONContunuous Collector Current I = 8ACCollector Power Dissipation-: P = 50W @T = 25C CCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in switching regulators and general purposepower ampl
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050