DISCRETE SEMICONDUCTORSDATA SHEETBUX84; BUX85Silicon diffused power transistors1997 Aug 13Product specificationSupersedes data of February 1996File under Discrete Semiconductors, SC06Philips Semiconductors Product specificationSilicon diffused power transistors BUX84; BUX85DESCRIPTION PINNINGHigh-voltage, high-speed,PIN DESCRIPTIONglass-passivated NPN power1 baset

BUX84NPN SILICON POWER TRANSISTOR 40 W at 25C Case Temperature TO-220 PACKAGE(TOP VIEW) 2 A Continuous Collector CurrentB 1 3 A Peak Collector CurrentC 2 Typical tf = 200 ns at 25CE 3Pin 2 is in electrical contact with the mounting base.MDTRACAabsolute maximum ratings at 25C case temperature (unless otherwise noted)RATING SYMBOL VALUE UNITColle

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-220 Plastic Package BUX84, BUX84ABUX84, 84A NPN PLASTIC POWER TRANSISTORSHigh Voltage, High Speed Power Switching ApplicationsPIN CONFIGURATION41. BASE2. COLLECTOR3. EMITTER4. COLLECTOR123CDIM MIN. MAX.EBFA 14.42 16.51B 9.63 10.67C 3.56 4.83D0.90E 1.15 1.40

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUX84 BUX85 DESCRIPTION With TO-220C package High switching speed APPLICATIONS Suitable for switching power supplies in TV sets PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolut maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT

isc Silicon NPN Power Transistor BUX84DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min.)CEO(SUS)High Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage,high-speed,power switchingregulators,converters,inverters,motor control system.ABSOLUTE MAXIMUM RATINGS (T =25

Philips Semiconductors Product specification NPN high voltage BUX84S Power transistorFEATURES SYMBOL QUICK REFERENCE DATA Fast switching VCESM = 800 Vc Excellent thermal stability High thermal cycling performance VCEO = 400 V Low thermal resistanceb Surface mounting package IC = 2 AVCE(SAT) 1 V (IC = 1 A)etf = 0.4 s (typ)GENERAL DESCRIPTION PINN

DISCRETE SEMICONDUCTORSDATA SHEETBUX84F; BUX85FSilicon diffused power transistors1997 Aug 14Product specificationSupersedes data of February 1996File under Discrete Semiconductors, SC06Philips Semiconductors Product specificationSilicon diffused power transistors BUX84F; BUX85FDESCRIPTION PINNINGHigh-voltage, high-speed,PIN DESCRIPTIONglass-passivated NPN power21

isc Silicon NPN Power Transistor BUX84ADESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min.)CEO(SUS)High Speed SwitchingHigh Reliability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage,high-speed,power switchingregulators,converters,inverters,motor con

isc Silicon NPN Power Transistor BUX84FDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min.)CEO(SUS)High Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage,high-speed,power switchingregulators,converters,inverters,motor control system.ABSOLUTE MAXIMUM RATINGS (T =25

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUX84F BUX85F DESCRIPTION With TO-220Fa package High voltage ,high speed APPLICATIONS Converters Inverters Switching regulators Motor controls systems PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol3 EmitterAbsolut maximum ratings (Ta=2