BUX98AHigh power NPN transistorFeatures High voltage capability High current capability Fast switching speed1Applications2 High frequency and efficency convertersTO-3 Linear and switching industrial equipmentType RDescriptionThe BUX98A is a multi-epitaxial mesa NPN Figure 1. Internal schematic diagramtransistor in TO-3 metal case, intended for i

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUX98 BUX98A DESCRIPTION With TO-3 package High voltage capability High current capability Fast switching speed APPLICATIONS High frequency and efficiency converters Linear and switching industrial equipment PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outlin

isc Silicon NPN Power Transistor BUX98ADESCRIPTIONHigh Voltage CapabilityHigh Current CapabilityFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh frequency and efficiency convertersLinear and switching industrial equipmentABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Colle

BUX98APWHIGH VOLTAGE NPN POWER TRANSISTOR STMicroelectronics PREFERREDSALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY HIGH CURRENT CAPABILITY FAST SWITCHING SPEED APPLICATIONS HIGH FREQUENCY AND EFFICENCY3CONVERTERS 21 LINEAR AND SWITCHING INDUSTRIALEQUIPMENT TO-247DESCRIPTION The BUX98APW is a silicon Multiepitaxial MesaNPN transistor in TO-247 pl

BUX98APHIGH POWER NPN SILICON TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY HIGH CURRENT CAPABILITY FAST SWITCHING SPEED APPLICATIONS HIGH FREQUENCY AND EFFICENCYCONVERTERS 3 LINEAR AND SWITCHING INDUSTRIAL21EQUIPMENT DESCRIPTION TO-218 (SOT-93) The BUX98AP is a silicon multiepitaxial mesaNPN transistor in jedec TO-218

BUX98AFDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25)26.67 (1.05) 9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 23(case)3.84 (0.151)4.09 (0.161) 7.92 (0.312)12.70 (0.50)TO3 (TO204AE) PINOUTS 1 Base 2 Emitter Case - Collector Parameter Test Conditions Min. Typ. Ma

isc Silicon NPN Power Transistor BUX98APDESCRIPTIONHigh Voltage CapabilityHigh Current CapabilityFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh frequency and efficiency convertersLinear and switching industrial equipmentABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Coll