C426 - описание и поиск аналогов

MOSFET Power, Single N-Channel 40 V, 1.3 mW, 235 A NTMFS5C426N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 40 V 1.3 mW @ 10 V 235 A MAXIMUM RATINGS (TJ = 25 C unless otherw

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Ordering number EN2969A NPN Epitaxial Planar Silicon Transistor 2SC4269 VHF Converter, Local Oscillator Applications Features Package Dimensions High power gain PG=15dB typ (f=0.4GHz) unit mm High cutoff frequency fT=1.2GHz typ 2018B [2SC4269] 0.4 0.16 3 0 0.1 1 0.95 2 0.95 1.9 2.9 1 Base 2 Emitter 3 Collector SANYO CP Specifications Absolute Maximum

MOSFET Power, Single N-Channel 40 V, 1.2 mW, 237 A NVMFS5C426NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS5C426NLWF - Wettable Flank Option for Enhanced Optical 1.2 mW @ 10 V Inspection 40 V 237 A 1.8 mW @ 4.5 V

MOSFET Power, Single N-Channel 40 V, 1.3 mW, 235 A NTMFS5C426N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 40 V 1.3 mW @ 10 V 235 A MAXIMUM RATINGS (TJ = 25 C unless otherw

NVMFS5C426N Power MOSFET 40 V, 1.3 mW, 235 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C426NWF - Wettable Flank Option for Enhanced Optical Inspection V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 40 V 1.3

2SC4265 Silicon NPN Epitaxial Application VHF RF amplifier, Local oscillator, Mixer Outline CMPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4265 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3V Collector current IC 50 mA Collector power dissipation PC 100 m

2SC4261 Silicon NPN Epitaxial Application UHF Local oscillator Outline CMPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4261 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 15 V Emitter to base voltage VEBO 3V Collector current IC 50 mA Collector power dissipation PC 100 mW Junction temperatu

2SC4262 Silicon NPN Epitaxial Application UHF / VHF Local oscillator Outline CMPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4262 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 20 V Collector to emitter voltage VCEO 15 V Emitter to base voltage VEBO 3V Collector current IC 50 mA Collector power dissipation PC 100 mW Junction tem

2SC4260 Silicon NPN Epitaxial Application UHF frequency converter, Wide band amplifier Outline CMPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4260 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 13 V Emitter to base voltage VEBO 3V Collector current IC 50 mA Collector power dissipation PC 10

2SC4264 Silicon NPN Epitaxial Application VHF / UHF RF amplifier, Local oscillator, Mixer Outline CMPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4264 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 20 V Collector to emitter voltage VCEO 11 V Emitter to base voltage VEBO 3V Collector current IC 50 mA Collector power dissipation PC

SMD Type Transistors NPN Transistors 2SC4269 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=15V +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4265 DESCRIPTION Low Noise High Gain 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in VHF RF amplifier, local oscillator, mixer. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 30 V CBO

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4261 DESCRIPTION Low Noise High Gain 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in UHF local oscillator. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 25 V CBO V Collector-Emitter

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4262 DESCRIPTION Low Noise High Gain 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in UHF VHF local oscillator. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 20 V CBO V Collector-Emi

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC4260 DESCRIPTION Low Noise High Gain APPLICATIONS Designed for use in UHF frequency converter , wide band amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 13 V VEBO Emitter-Base Voltage 3.0 V

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4264 DESCRIPTION Low Noise High Gain 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in UHF VHF RF amplifier, local oscillator, mixer. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 20 V