NTMFS5C450NLPower MOSFET40 V, 2.8 mW, 110 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseswww.onsemi.com These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)2.8 mW @ 10 VPar

NTMFS5C450NMOSFET Power, Single,N-Channel40 V, 3.3 mW, 102 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant40 V 3.3 mW @ 10 V 102 AMAXIMUM RATINGS (TJ = 25C unless other

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC450/DHigh Voltage TransistorsPNP SiliconBC450,ACOLLECTOR12BASE3EMITTERMAXIMUM RATINGS12Rating Symbol Value Unit3CollectorEmitter Voltage VCEO 100 VdcCASE 2904, STYLE 17CollectorBase Voltage VCBO 100 VdcTO92 (TO226AA)EmitterBase Voltage VEBO 5.0 VdcCollector Curren

Ordering number:EN3160ANPN Epitaxial Planar Silicon Transistor2SC4504High-Definition CRT DisplayVideo Output Driver ApplicationsFeatures Package Dimensions High fT (fT=2.2GHz typ)unit:mm Large current (IC=300mA)2038A Adoption of FBET process.[2SC4504]4.51.51.60.4 0.53 2 10.41.53.01 : Base2 : Collector0.753 : EmitterSANYO : PCP(Bottom vi

2SA1759TransistorsTransistors2SC4505 / 2SC4620(96-97-A324)(96-178-C300)305

NVMFS5C450NLPower MOSFET40 V, 2.8 mW, 110 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C450NLWF - Wettable Flank Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable2.8 mW

NTMFS5C450NLPower MOSFET40 V, 2.8 mW, 110 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseswww.onsemi.com These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)2.8 mW @ 10 VPar

NTMFS5C450NMOSFET Power, Single,N-Channel40 V, 3.3 mW, 102 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant40 V 3.3 mW @ 10 V 102 AMAXIMUM RATINGS (TJ = 25C unless other

NVMFS5C450NMOSFET Power, SingleN-Channel40 V, 3.3 mW, 102 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS5C450NWF - Wettable Flank Option for Enhanced Optical40 V 3.3 mW @ 10 V 102 AInspection AEC-Q101 Qualif

Transistor2SC4502Silicon NPN epitaxial planer typeFor mtermediate frequency amplificationUnit: mm2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesHigh transition frequency fT.Large collector power dissipation PC. 0.65 max.Allowing supply with the radial taping.+0.1 Absolute Maximum Ratings (Ta=25C)0.450.052.5 0.5 2.5 0.5Parameter Symbol Rating

Transistor2SC4502Silicon NPN epitaxial planer typeFor mtermediate frequency amplificationUnit: mm2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesHigh transition frequency fT.Large collector power dissipation PC. 0.65 max.Allowing supply with the radial taping.+0.1 Absolute Maximum Ratings (Ta=25C)0.450.052.5 0.5 2.5 0.5Parameter Symbol Rating

This product complies with the RoHS Directive (EU 2002/95/EC).DSC4501Silicon NPN epitaxial planar typeFor low frequency amplificationDSC2501 in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B Eco-friendly Halogen-free package Pin N

2SC4501(L)/(S)Silicon NPN EpitaxialApplicationHigh gain amplifier and medium speed switchingOutlineDPAK42, 441121. Base 3 2. Collector 3. Emitter S Type 124. Collector33L Type2SC4501(L)/(S)Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 30 VEmitter to base volta

2SC4500(L)/(S)Silicon NPN EpitaxialApplicationLow frequency amplifierOutlineDPAK42, 441121. Base3 2. Collector3. EmitterS Type 124. Collector33L Type2SC4500(L)/(S)Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 60 VCollector to emitter voltage VCEO 60 VEmitter to base voltage VEBO 7VCollector curr

TSC4505 High Voltage NPN Transistor SOT-23 Pin Definition: PRODUCT SUMMARY 1. Base BVCEO 400V 2. Emitter 3. Collector BVCBO 400V IC 300mA VCE(SAT) 0.1V @ IC / IB = 10mA / 1mA Features Ordering Information Low VCE(SAT) 0.15V @ IC / IB = 10mA / 10mA (Typ.) Part No. Package Packing Complementary part with TSA1759 TSC4505CX RF SOT-23 3Kpcs / 7 Reel TSC450

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLANAR EPITAXIAL TRANSISTORS BC 446, A, BBC 448, A, BBC 450, A, BTO-92Plastic PackageGeneral Purpose High Voltage Transistors. ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNITSVCEOCollector Emitter Voltage6

JMnic Product SpecificationSilicon NPN Power Transistors 2SC4508 DESCRIPTION With TO-220F package High breakdown voltage High speed switching performance APPLICATIONS For switching regulator and general purpose power amplifier applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum rating

JMnic Silicon NPN Power Transistors 2SC4509 DESCRIPTION With TO-3PML package High voltage ,high speed switching Low collector saturation voltage APPLICATIONS Switching regulators DC-DC convertors Solid state relay General purpose power amplifiers PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolu

JMnic Product SpecificationSilicon NPN Power Transistors 2SC4507 DESCRIPTION With TO-220F package High breakdown voltage High speed switching performance APPLICATIONS For switching regulator and general purpose power amplifier applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum rating

WTC45013 DRAINN-Channel Enhancement DRAIN CURRENTMode Power MOSFET3.2 AMPERESP b Lead(Pb)-FreeDRAIN SOUCE VOLTAGE1GATE20 VOLTAGE2 SOURCEFeatures:* Leading Planar Technology for Low Gate Charge / Fast Switching.3* 2.5V Rated for Low Voltage Gate Drive.1* SOT-23 Surface Mount for Small Footprint.2Applications:SOT-23* Load/Power Switch for Portables.* Lo

Spec. No. : C780Q8 Issued Date : 2012.05.17 CYStech Electronics Corp.Revised Date : Page No. : 1/12 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH P-CHMTC4506Q8 BVDSS 60V -60VID 5.3A -3.9ARDSON(typ.) @VGS=(-)10V 28m 57m RDSON(typ.) @VGS=(-)4.5V 31m 67m Description The MTC4506Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SO

Spec. No. : C384Q8 Issued Date : 2010.12.10 CYStech Electronics Corp.Revised Date : Page No. : 1/10 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC4503Q8G Description The MTC4503Q8G consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8 package, providing the designer with the best combination of fast switching, ruggedized device design, low on

Spec. No. : C384Q8 Issued Date : 2015.01.06 CYStech Electronics Corp.Revised Date : Page No. : 1/10 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC4503LQ8 Description The MTC4503LQ8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8 package, providing the designer with the best combination of fast switching, ruggedized device design, low on

Spec. No. : C439Q8 Issued Date : 2009.02.19 CYStech Electronics Corp.Revised Date : 2014.02.06 Page No. : 1/10 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH P-CHMTC4505Q8 BVDSS 30V -30VID 12A -10ARDSON(max) 14m 20mDescription The MTC4505Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8 package, providing the designer with t

Spec. No. : C385Q8 Issued Date : 2007.06.13 CYStech Electronics Corp.Revised Date : 2011.03.18 Page No. : 1/12 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC4501Q8 Description The MTC4501Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8 package, providing the designer with the best combination of fast switching, ruggedized device design,

Spec. No. : C384Q8 Issued Date : 2007.06.13 CYStech Electronics Corp.Revised Date :2014.03.26 Page No. : 1/10 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC4503Q8 Description The MTC4503Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8 package, providing the designer with the best combination of fast switching, ruggedized device design,

Spec. No. : C210M3 Issued Date : 2003.05.15 CYStech Electronics Corp.Revised Date :2013.08.06 Page No. : 1/6 High Voltage NPN Epitaxial Planar Transistor BTC4505M3 Features High breakdown voltage, BV =400V. CEO (min) Low saturation voltage, typically V (sat) =0.14V at I /I 50mA/5mA. CE C B= Complementary to BTA1759M3. Pb-free package. Symbol Outline B

Spec. No. : C780J4 Issued Date : 2014.01.16 CYStech Electronics Corp.Revised Date : Page No. : 1/13 N & P-Channel Enhancement Mode Power MOSFET N-CH P-CHMTC4506J4 BVDSS 60V -60VID 5.4A -4.0ARDSON(typ.) @VGS=(-)10V 25.5m 46.5m RDSON(typ.) @VGS=(-)4.5V 28m 56.6m Features Low Gate Charge Simple Drive Requirement RoHS compliant & Halogen-free packa

Spec. No. : C384Q8 Issued Date : 2012.04.30 CYStech Electronics Corp.Revised Date : 2014.03.07 Page No. : 1/12 N- AND P-Channel Logic Level Enhancement Mode MOSFET N-CH P-CHMTC4503AQ8 BVDSS 30V -30VID 11A -9.5ARDSON(typ.) @VGS=(-)10V 13m 21m RDSON(typ.) @VGS=(-)4.5V 20m 34m Description The MTC4503AQ8 consists of a N-channel and a P-channel enhancement-mode MOS

Spec. No. : C210A3-R Issued Date : 2003.10.15 CYStech Electronics Corp.Revised Date :2007.11.22 Page No. : 1/4 High Voltage NPN Epitaxial Planar Transistor BTC4505A3 Features High breakdown voltage. (BV = 400V) CEO Low saturation voltage, typically V (sat) = 0.1V at I / I 10mA / 1mA. CE C B= Complementary to BTA1759A3 RoHS compliant package Symbol Outl

Spec. No. : C210N3 Issued Date : 2003.05.09 CYStech Electronics Corp.Revised Date : 2010.10.19 Page No. : 1/6 High Voltage NPN Epitaxial Planar Transistor BVCEO 400VIC 0.3ABTC4505N3 VCESAT(TYP) 0.1VFeatures High breakdown voltage. (BV =400V) CEO Low saturation voltage, typically V (sat) =0.1V at I /I 10mA/1mA. CE C B= Complementary to BTA1759N3 Pb-

SMD Type TransistorsNPN Transistors2SC4505SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=0.1A Collector Emitter Voltage VCEO=400V0.42 0.10.46 0.1 Complements to 2SA17591.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 400 Collector - Emitter Voltage VCEO 4

SMD Type TransistorsNPN Transistors2SC4504SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=0.3A Collector Emitter Voltage VCEO=20V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 20 V Emitter - Base Voltage VE

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4508DESCRIPTIONFast switching speedSilicon NPN planar diffused planar transistor100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio temperature compensation and general purposeABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4509DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 400V(Min.)CEO(SUS)High Switching SpeedHigh ReliabilityLow Collector Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsDC-DC conver

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4507DESCRIPTIONFast switching speedSilicon NPN planar diffused planar transistor100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio temperature compensation and general purposeABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI