TransistorsPower management(dual digital transistors)UMC5N / FMC5AFFeatures FExternal dimensions (Units: mm)1) Both the DTA143X chip andDTC144E chip in a UMT or SMTpackage.2) Ideal for power switch circuits.3) Mounting cost and area can be cutin half.FStructureEpitaxial planar typeNPN/PNP silicon transistor(Built-in resistor type)FAbsolute maximum ratings (Ta = 25_

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NTMFS4C55NPower MOSFET30 V, 78 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseswww.onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXApplications3.4 mW @ 10 V CPU Power Delive

MCAC50N10YElectrical Characteristics @ 25C (Unless Otherwise Specified)Parameter Symbol Test Conditions Min Typ Max UnitStatic CharacteristicsV(BR)DSS VGS=0V, ID=250ADrain-Source Breakdown Voltage 100 VIGSS VDS=0V, VGS =20VGate-Source Leakage Current 100 nAIDSS VDS=80V, VGS=0VZero Gate Voltage Drain Current 1 AVGS(th) VDS=VGS, ID=250A1 2 3 VGate-Threshold

MCAC50N06YElectrical Characteristics @ 25C (Unless Otherwise Specified)Parameter Symbol Test Conditions Min Typ Max UnitStatic CharacteristicsV(BR)DSS VGS=0V, ID=250ADrain-Source Breakdown Voltage 60 VIGSS VDS=0V, VGS =20VGate-Source Leakage Current 100 nAIDSS VDS=48V, VGS=0V, TJ=25CZero Gate Voltage Drain Current 1 AVGS(th) VDS=VGS, ID=250AGate-Threshol

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC556/DAmplifier TransistorsBC556,BPNP SiliconBC557A,B,CCOLLECTORBC558B12BASE3EMITTERMAXIMUM RATINGS12BC BC BC3556 557 558Rating Symbol UnitCASE 2904, STYLE 17CollectorEmitter Voltage VCEO 65 45 30 VdcTO92 (TO226AA)CollectorBase Voltage VCBO 80 50 30 Vdc

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC517/DDarlington TransistorsNPN SiliconBC517COLLECTOR 1BASE2EMITTER 3123MAXIMUM RATINGSCASE 2904, STYLE 17Rating Symbol Value UnitTO92 (TO226AA)CollectorEmitter Voltage VCES 30 VdcCollectorBase Voltage VCB 40 VdcEmitterBase Voltage VEB 10 VdcCollector Current Continuous IC

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC556/DAmplifier TransistorsBC556,BPNP SiliconBC557A,B,CCOLLECTORBC558B12BASE3EMITTERMAXIMUM RATINGS12BC BC BC3556 557 558Rating Symbol UnitCASE 2904, STYLE 17CollectorEmitter Voltage VCEO 65 45 30 VdcTO92 (TO226AA)CollectorBase Voltage VCBO 80 50 30 Vdc

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC549B/DLow Noise TransistorsNPN SiliconBC549B,CBC550B,CCOLLECTOR12BASE3EMITTER1MAXIMUM RATINGS23Rating Symbol BC549 BC550 UnitCASE 2904, STYLE 17CollectorEmitter Voltage VCEO 30 45 VdcTO92 (TO226AA)CollectorBase Voltage VCBO 30 50 VdcEmitterBase Voltage VEBO 5.0 VdcCollec

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC559/DLow Noise TransistorsPNP SiliconBC559, B, CBC560CCOLLECTOR12BASE3EMITTER1MAXIMUM RATINGS23Rating Symbol BC559 BC560 UnitCASE 2904, STYLE 17CollectorEmitter Voltage VCEO 30 45 VdcTO92 (TO226AA)CollectorBase Voltage VCBO 30 50 VdcEmitterBase Voltage VEBO

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC546/DAmplifier TransistorsBC546, BNPN SiliconBC547, A, B, CBC548, A, B, CCOLLECTOR12BASE3EMITTER1MAXIMUM RATINGS23BC BC BC546 547 548Rating Symbol UnitCASE 2904, STYLE 17TO92 (TO226AA)CollectorEmitter Voltage VCEO 65 45 30 VdcCollectorBase Voltage VCBO 80 50 30 VdcEmitt

PD - 91252AREPETITIVE AVALANCHE AND dv/dt RATED IRHM2C50SEIRHM7C50SEHEXFET TRANSISTORN-CHANNELSINGLE EVENT EFFECT (SEE) RAD HARDProduct Summary600Volt, 0.6, (SEE) RAD HARD HEXFETPart Number BVDSS RDS(on) IDInternational Rectifiers (SEE) RAD HARD technologyIRHM2C50SE 600V 0.60 10.4AHEXFETs demonstrate immunity to SEE failure. Ad-ditionally,

D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighterVCE(on) typ. = 1.65VG parameter distribution and higher efficiency than Generation 3

PD-96001BIRC530PbF Lead-Freewww.irf.com 12/10/05IRC530PbF2 www.irf.comIRC530PbFwww.irf.com 3IRC530PbF4 www.irf.comIRC530PbFwww.irf.com 5IRC530PbF6 www.irf.comIRC530PbFwww.irf.com 7IRC530PbF8 www.irf.comIRC530PbFHexsenseTO-220 5L Package Outline ( Dimensions are shown in millimeters (inches)Hexsense TO-220 5L Part Marking InformationEXAMPL

PD -93769PROVISIONALIRG4BAC50WINSULATED GATE BIPOLAR TRANSISTORCFeatures Designed expressly for switch-mode powerVCES = 600V supply and PFC (power factor correction) applications Industry-benchmark switching losses improveVCE(on) max. = 2.30VG efficiency of all power supply topologies 50% reduction of Eoff parameter@VGE = 15V, IC = 27AE Low IGBT con

PD- 91870IRG4CC58KBIRG4CC58KB IGBT Die in Wafer FormC600 VSize 5.8Ultra-Fast SpeedG Short Circuit Rated6" WaferEElectrical Characteristics ( Wafer Form )Parameter Description Guaranteed (Min/Max) Test ConditionsVCE (on) Collector-to-Emitter Saturation Voltage 4.5V Max. IC = 10A, TJ = 25C, VGE = 15VV(BR)CES Colletor-to-Emitter Breakdown Voltage 600V Min. TJ = 25C, I

PD 91471BIRG4PC50UD UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant modeVCE(on) typ. = 1.65V Generation 4 IGBT design provides tighterG parameter distribution an

PD- 91836AIRG4CC50WBIRG4CC50WB IGBT Die in Wafer FormC600 VSize 5WARP SpeedG6" WaferEElectrical Characteristics ( Wafer Form )Parameter Description Guaranteed (Min/Max) Test ConditionsVCE (on) Collector-to-Emitter Saturation Voltage 2.3V Max. IC = 10A, TJ = 25C, VGE = 15VV(BR)CES Colletor-to-Emitter Breakdown Voltage 600V Min. TJ = 25C, ICES = 250A, VGE = 0VVGE

Provisional Data Sheet No. PD-9.1476AREPETITIVE AVALANCHE AND dv/dt RATEDIRHN2C50SEHEXFET TRANSISTORIRHN7C50SEN-CHANNELSINGLE EVENT EFFECT (SEE) RAD HARDProduct Summary600 Volt, 0.60, (SEE) RAD HARD HEXFETPart Number BVDSS RDS(on) IDInternational Rectifiers (SEE) RAD HARD technologyHEXFETs demonstrate virtual immunity to SEE fail- IRHN2C50SE60

PD -90825AIRGMVC50UUltra Fast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORWITH ON-BOARD REVERSE DIODECFeatures Electrically Isolated and Hermetically Sealed VCES = 600V Simple Drive Requirements Latch-proofVCE(on) max = 3.0V Ultra Fast operation 10 kHz G Switching-loss rating includes all "tail" losses@VGE = 15V, IC = 27A Ceramic EyeletsEn-chan

PD-9.1424IRGCC50KETARGETIRGCC50KE IGBT Die in Wafer FormC600 VSize 5Ultra-Fast SpeedG5" WaferEElectrical Characteristics ( Wafer Form )Parameter Description Guaranteed (Min/Max) Test ConditionsVCE (on) Collector-to-Emitter Saturation Voltage 3.0V Max. IC = 20A, TJ = 25C, VGE = 15VV(BR)CES Colletor-to-Emitter Breakdown Voltage 600V Min. TJ = 25C, ICES = 250A, VG

PD - 9.1024IRGPC50MINSULATED GATE BIPOLAR TRANSISTOR Short Circuit RatedFast IGBTFeaturesC Short circuit rated - 10s @ 125C, V = 15VGEVCES = 600V Switching-loss rating includes all "tail" losses Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency VCE(sat) 2.2VGcurve@VGE = 15V, IC = 35AEn-channelDescription

PD 91469BIRG4PC50FD Fast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures Fast: Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).VCE(on) typ. = 1.45V Generation 4 IGBT design provides tighterG parameter distribution and high

IRGC50B60KBPD - 94377IRGC50B60KBDie in Wafer FormFeaturesFeaturesFeaturesFeaturesFeatures600VC GEN5 Non Punch Through (NPT) TechnologyIC(nom)=50A Low VCE(on)VCE(on) typ.=2.0V @ 10s Short Circuit Capability Square RBSOAIC(nom) @ 25C Positive VCE(on) Temperature CoefficientMotor Control IGBTGBenefitsShort Circuit R

PD- 91829IRG4CC50SBIRG4CC50SB IGBT Die in Wafer FormC600 VSize 5Standard SpeedG6" WaferEElectrical Characteristics ( Wafer Form )Parameter Description Guaranteed (Min/Max) Test ConditionsVCE (on) Collector-to-Emitter Saturation Voltage 4.5V Max. IC = 10A, TJ = 25C, VGE = 15VV(BR)CES Colletor-to-Emitter Breakdown Voltage 600V Min. TJ = 25C, ICES = 250A, VGE = 0V

PD - 9.1233IRFPC50LCHEXFET Power MOSFETUltra Low Gate ChargeReduced Gate Drive RequirementVDSS = 600VEnhanced 30V Vgs RatingReduced Ciss, Coss, CrssRDS(on) = 0.60Isolated Central Mounting HoleDynamic dv/dt RatedRepetitive Avalanche Rated ID = 11ADescriptionThis new series of Low Charge HEXFET Power MOSFETs achieve significantlylower gate charge over conventional

PD- 91764IRG4CC50UBIRG4CC50UB IGBT Die in Wafer FormC600 VSize 5Ultra-Fast SpeedG6" WaferEElectrical Characteristics ( Wafer Form )Parameter Description Guaranteed (Min/Max) Test ConditionsVCE (on) Collector-to-Emitter Saturation Voltage 4.5V Max. IC = 10A, TJ = 25C, VGE = 15VV(BR)CES Colletor-to-Emitter Breakdown Voltage 600V Min. TJ = 25C, ICES = 250A, VGE = 0V

PD - 93771PROVISIONALIRG4BAC50SStandard Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C Standard: Optimized for minimum saturationVCES = 600V voltage and low operating frequencies (

PD - 94408IRGC5B60KBDie in Wafer FormFeaturesFeaturesFeaturesFeaturesFeatures600VC GEN5 Non Punch Through (NPT) TechnologyIC(nom)= 5A Low VCE(on)VCE(on) typ.=1.8V @ 10s Short Circuit Capability Square RBSOAIC(nom) @ 25C Positive VCE(on) Temperature CoefficientMotor Control IGBTGBenefitsShort Circuit Rated Benchmark Efficien

PD -93770PROVISIONALIRG4BAC50UUltraFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C UltraFast: Optimized for high operatingVCES = 600V frequencies 8-40kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighterVCE(on) typ. = 1.65VG parameter distribution and higher efficiency than Generation 3@VGE = 15V, IC = 27AE

PD -91582BIRG4PC50KDINSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit RatedULTRAFAST SOFT RECOVERY DIODE UltraFast IGBTFeaturesC Short Circuit Rated UltraFast: Optimized for highVCES = 600Voperating frequencies >5.0 kHz, and Short Circuit Ratedto 10s @125C, VGE = 15VVCE(on) typ. = 1.84V Generation 4 IGBT design provides tighter parameterGdistribution and higher

PD -94273AIRG4MC50U UltraFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C Electrically Isolated and Hermetically SealedVCES = 600V Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHzVCE(on) max = 2.25VG High operating frequency Switching-loss rating includes all "tail" losses@VGE = 15V, IC = 27AE Ceramic eyelets

PD-9.1425IRGCC50FETARGETIRGCC50FE IGBT Die in Wafer FormC600 VSize 5Fast SpeedG5" WaferEElectrical Characteristics ( Wafer Form )Parameter Description Guaranteed (Min/Max) Test ConditionsVCE (on) Collector-to-Emitter Saturation Voltage 2.0V Max. IC = 20A, TJ = 25C, VGE = 15VV(BR)CES Colletor-to-Emitter Breakdown Voltage 600V Min. TJ = 25C, ICES = 250A, VGE = 0V

D IRG4PC50S I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures Standard: Optimized for minimum saturationVCES = 600V voltage and low operating frequencies (

PD -90718BIRGMC50F Fast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeaturesC Electrically Isolated and Hermetically Sealed Simple Drive RequirementsVCES = 600V Latch-proof Fast Speed operation 3 kHz - 8 kHzVCE(on) max = 1.7VG Switching-loss rating includes all "tail" losses@VGE = 15V, IC = 30AEn-channelDescriptionInsulated Gate Bipolar Transist

PD - 91583BIRG4PC50KShort Circuit RatedINSULATED GATE BIPOLAR TRANSISTORUltraFast IGBTCFeaturesFeaturesFeaturesFeaturesFeatures High short circuit rating optimized for motor control,VCES = 600V tsc =10s, @360V VCE (start), TJ = 125C, VGE = 15V Combines low conduction losses with highVCE(on) typ. = 1.84VG switching speed Latest generation design

Provisional Data Sheet No. PD-9.1476AREPETITIVE AVALANCHE AND dv/dt RATEDIRHN2C50SEHEXFET TRANSISTORIRHN7C50SEN-CHANNELSINGLE EVENT EFFECT (SEE) RAD HARDProduct Summary600 Volt, 0.60, (SEE) RAD HARD HEXFETPart Number BVDSS RDS(on) IDInternational Rectifiers (SEE) RAD HARD technologyHEXFETs demonstrate virtual immunity to SEE fail- IRHN2C50SE60

PD -90813AIRGMIC50UUltra Fast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORWITH ON-BOARD REVERSE DIODECFeatures Electrically Isolated and Hermetically Sealed VCES = 600V Simple Drive Requirements Latch-proofVCE(on) max = 3.0VG Ultra Fast operation 10 kHz Switching-loss rating includes all "tail" losses@VGE = 15V, IC = 27AEn-channelDescriptionIn

D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighterVCE(on) typ. = 1.45VG parameter distribution and higher efficiency than Generation 3@VGE = 15V,

PD- 91828IRG4CC50FBIRG4CC50FB IGBT Die in Wafer FormC600 VSize 5Fast SpeedG6" WaferEElectrical Characteristics ( Wafer Form )Parameter Description Guaranteed (Min/Max) Test ConditionsVCE (on) Collector-to-Emitter Saturation Voltage 4.5V Max. IC = 10A, TJ = 25C, VGE = 15VV(BR)CES Colletor-to-Emitter Breakdown Voltage 600V Min. TJ = 25C, ICES = 250A, VGE = 0VVGE(

PD - 93870IRGC50B120KBDie in Wafer FormFeaturesFeaturesFeaturesFeaturesFeatures1200VC GEN5 Non Punch Through (NPT) TechnologyIC(nom)= 50A Low VCE(on)VCE(on) typ.=2.15V @ 10s Short Circuit Capability Square RBSOAIC(nom) @ 25C Positive VCE(on) Temperature CoefficientMotor Control IGBTGBenefitsShort Circuit Rated Benchmark Eff

PD - 94314IRGC5B120KBIRGC5B120KB IGBT Die in Wafer FormFeatures GEN5 Non Punch Through (NPT) Technology Low VCE(on)1200 VC 10s Short Circuit CapabilityIC(nom) = 5A Square RBSOAVCE(on) typ. = 2.55V @ Positive VCE(on) Temperature CoefficientIC(nom) @ 25CBenefitsMotor Control IGBT Benchmark Efficiency for Motor ControlG Rugged Transient

PD - 9.695AIRGPC50FINSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBTFeaturesC Switching-loss rating includes all "tail" lossesVCES = 600V Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequencycurve VCE(sat) 1.7VG@VGE = 15V, IC = 39AEn-channelDescriptionInsulated Gate Bipolar Transistors (IGBTs) from International Rectif

D IRG4PC50S-PStandard Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures CFeaturesFeaturesFeaturesFeatures Standard: Optimized for minimum saturationVCES = 600V voltage and low operating frequencies (

PD - 9.694AIRGPC50SINSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBTFeaturesC Switching-loss rating includes all "tail" lossesVCES = 600V Optimized for line frequency operation (to 400Hz) See Fig. 1 for Current vs. Frequency curveVCE(sat) 1.6VG@VGE = 15V, IC = 41AEn-channelDescriptionInsulated Gate Bipolar Transistors (IGBTs) from International Rectif

PD- 91774IRG4CC50KBIRG4CC50KB IGBT Die in Wafer FormC600 VSize 5Ultra-Fast SpeedG6" WaferEElectrical Characteristics ( Wafer Form )Parameter Description Guaranteed (Min/Max) Test ConditionsVCE (on) Collector-to-Emitter Saturation Voltage 4.5V Max. IC = 10A, TJ = 25C, VGE = 15VV(BR)CES Colletor-to-Emitter Breakdown Voltage 600V Min. TJ = 25C, ICES = 250A, VGE = 0V

PD - 94315IRGC5B120UBIRGC5B120UB IGBT Die in Wafer FormFeatures GEN5 Non Punch Through (NPT) Technology UltraFast1200 V 10s Short Circuit Capability C Square RBSOAIC(nom) = 5A Positive VCE(on) Temperature CoefficientVCE(on) typ. = 4.01V @BenefitsIC(nom) @ 25C Benchmark Efficiency above 20KHzUltraFast IGBT Optimized for Welding, UPS, and I

PD - 94934IRFPC50PbF Lead-Free1/8/04Document Number: 91243 www.vishay.com1IRFPC50PbFDocument Number: 91243 www.vishay.com2IRFPC50PbFDocument Number: 91243 www.vishay.com3IRFPC50PbFDocument Number: 91243 www.vishay.com4IRFPC50PbFDocument Number: 91243 www.vishay.com5IRFPC50PbFDocument Number: 91243 www.vishay.com6IRFPC50PbFTO-247AC Package Out

PD - 9.1145IRGPC50MD2INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated FastWITH ULTRAFAST SOFT RECOVERY DIODE CoPack IGBTFeaturesC Short circuit rated -10s @125C, VGE = 15V VCES = 600V Switching-loss rating includes all "tail" losses HEXFREDTM soft ultrafast diodesVCE(sat) 2.0V Optimized for medium operating frequency ( 1 toG 10kHz) See Fig. 1 fo

PD -94274AIRG4MC50FFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C Electrically Isolated and Hermetically SealedVCES = 600V Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHzVCE(on) max = 2.0VG High operating frequency Switching-loss rating includes all "tail" losses@VGE = 15V, IC = 30AE Ceramic eyeletsn-cha

PD - 9.1233IRFPC50LCHEXFET Power MOSFETUltra Low Gate ChargeReduced Gate Drive RequirementVDSS = 600VEnhanced 30V Vgs RatingReduced Ciss, Coss, CrssRDS(on) = 0.60Isolated Central Mounting HoleDynamic dv/dt RatedRepetitive Avalanche Rated ID = 11ADescriptionThis new series of Low Charge HEXFET Power MOSFETs achieve significantlylower gate charge over conventional

PD - 9.800IRGPC50FD2INSULATED GATE BIPOLAR TRANSISTOR Fast CoPack IGBTWITH ULTRAFAST SOFT RECOVERYDIODEFeaturesCVCES = 600V Switching-loss rating includes all "tail" losses HEXFREDTM soft ultrafast diodes Optimized for medium operating frequency (1 toVCE(sat) 1.7V 10kHz) See Fig. 1 for Current vs. Frequency curveG@VGE = 15V, IC = 39AEn-channelDescr

PD - 9.802AIRGPC50UD2INSULATED GATE BIPOLAR TRANSISTOR UltraFast CoPack IGBTWITH ULTRAFAST SOFT RECOVERYDIODEFeaturesCVCES = 600V Switching-loss rating includes all "tail" losses HEXFREDTM soft ultrafast diodes Optimized for high operating frequency (over 5kHz)VCE(sat) 3.0VSee Fig. 1 for Current vs. Frequency curveG@VGE = 15V, IC = 27AEn-channelDes

PD - 96168IRG4PC50F-EPbFFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighterVCE(on) typ. = 1.45VG parameter distribution and higher efficiency than Generation 3@VGE = 15V, IC = 39AE Industry standar

PD-9.1423IRGCC50METARGETIRGCC50ME IGBT Die in Wafer FormC600 VSize 5Fast SpeedG5" WaferEElectrical Characteristics ( Wafer Form )Parameter Description Guaranteed (Min/Max) Test ConditionsVCE (on) Collector-to-Emitter Saturation Voltage 2.5V Max. IC = 20A, TJ = 25C, VGE = 15VV(BR)CES Colletor-to-Emitter Breakdown Voltage 600V Min. TJ = 25C, ICES = 250A, VGE = 0V

D IRG4PC50WI T D T I T I T CFeaturesFeaturesFeaturesFeaturesFeatures Designed expressly for Switch-Mode PowerVCES = 600V Supply and PFC (power factor correction) applications Industry-benchmark switching losses improveVCE(on) max. = 2.30VG efficiency of all power supply topologies 50% reduction of Eoff parameter@VGE = 15V, I

PD- 91898SMPS MOSFETIRFPC50AHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 600V 0.58 11A High speed power switchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage and Current

PD -90719BIRGMC50UUltra Fast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeaturesC Electrically Isolated and Hermetically Sealed Simple Drive RequirementsVCES = 600V Latch-proof Fast Speed operation 10 kHzVCE(on) max = 3.0VG Switching-loss rating includes all "tail" losses@VGE = 15V, IC = 20AEn-channelDescriptionInsulated Gate Bipolar Transist

DISCRETE SEMICONDUCTORSDATA SHEETBFC520NPN wideband cascode transistor1997 Sep 10Product specificationSupersedes data of 1996 Oct 08File under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN wideband cascode transistor BFC520FEATURES PINNING - SOT353 Small sizeSYMBOL PIN DESCRIPTION High power gain at low bias current and highb2 1

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186JC559PNP general purpose transistor1999 Apr 27Product specificationSupersedes data of 1997 Jul 09Philips Semiconductors Product specificationPNP general purpose transistor JC559FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 30 V).1 base2 collectorAPPLICATIONS3 emitter

BC846/BC546 series65 V, 100 mA NPN general-purpose transistorsRev. 07 17 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages.Table 1. Product overviewType number[1] Package PNP complementNXP JEITA JEDECBC846 SOT23 - TO-236AB BC856BC846W SOT323 SC-70 - BC856WBC846T SO

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BC556; BC557PNP general purpose transistors1999 Apr 15Product specificationSupersedes data of 1997 Mar 27Philips Semiconductors Product specificationPNP general purpose transistors BC556; BC557FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 65 V).1 emitter2 baseAPPLICATIONS

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186JC501NPN general purpose transistor1999 Apr 27Product specificationSupersedes data of 1997 Mar 17Philips Semiconductors Product specificationNPN general purpose transistor JC501FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 base2 collectorAPPLICATIONS3 emitter

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D186BC549; BC550NPN general purpose transistorsProduct data sheet 2004 Oct 11Supersedes data of 1999 Apr 22NXP Semiconductors Product data sheetNPN general purpose transistors BC549; BC550FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 emitter2 baseAPPLICATIONS3 colle

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186JC556; JC557; JC558PNP general purpose transistors1999 Apr 27Product specificationSupersedes data of 1997 Jul 02Philips Semiconductors Product specificationPNP general purpose transistors JC556; JC557; JC558FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 65 V).1 base2 collecto

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BC559PNP general purpose transistor1999 May 28Product specificationSupersedes data of 1997 Jun 03Philips Semiconductors Product specificationPNP general purpose transistor BC559FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 30 V).1 emitter2 baseAPPLICATIONS3 collector

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BC516PNP Darlington transistor1999 Apr 23Product specificationSupersedes data of 1997 Apr 16Philips Semiconductors Product specificationPNP Darlington transistor BC516FEATURES PINNING High current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 30 V)1 emitter Very high DC current gain (min. 30000).2

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BC517NPN Darlington transistor1999 Apr 23Product specificationSupersedes data of 1997 Apr 23Philips Semiconductors Product specificationNPN Darlington transistor BC517FEATURES PINNING High current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 30 V)1 emitter Very high DC current gain (min. 30000).2

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BC517NPN Darlington transistor1999 Apr 23Product specificationSupersedes data of 1997 Apr 23Philips Semiconductors Product specificationNPN Darlington transistor BC517FEATURES PINNING High current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 30 V)1 emitter Very high DC current gain (min. 30000).2

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BC549; BC550NPN general purpose transistors1999 Apr 22Product specificationSupersedes data of 1997 Jun 20Philips Semiconductors Product specificationNPN general purpose transistors BC549; BC550FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 emitter2 baseAPPLICATIONS

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D186BC556; BC557PNP general purpose transistorsProduct data sheet 2004 Oct 11Supersedes data of 1999 Apr 15NXP Semiconductors Product data sheetPNP general purpose transistors BC556; BC557FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 65 V).1 emitter2 baseAPPLICATIONS3 colle

DISCRETE SEMICONDUCTORSDATA SHEETPPC5001TNPN microwave power transistor1997 Mar 03Product specificationSupersedes data of November 1994File under Discrete Semiconductors, SC15Philips Semiconductors Product specificationNPN microwave power transistor PPC5001TFEATURES PINNING - SOT447A Diffused emitter ballasting resistors providing excellentPIN DESCRIPTIONcurrent sh

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186JC546; JC547; JC548NPN general purpose transistors1999 Apr 27Product specificationSupersedes data of 1997 Mar 14Philips Semiconductors Product specificationNPN general purpose transistors JC546; JC547; JC548FEATURES PINNING Low current max. 100 mA)PIN DESCRIPTION Low voltage (max. 65 V).1 base2 collector

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BC549; BC550NPN general purpose transistors1999 Apr 22Product specificationSupersedes data of 1997 Jun 20Philips Semiconductors Product specificationNPN general purpose transistors BC549; BC550FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 emitter2 baseAPPLICATIONS

DISCRETE SEMICONDUCTORSDATA SHEETBFC505NPN wideband cascode transistor1996 Oct 08Product specificationSupersedes data of 1995 Sep 01File under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN wideband cascode transistor BFC505FEATURES PINNING - SOT353 Small sizePIN SYMBOL DESCRIPTION High power gain at low bias current and high1b2 b

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BC516PNP Darlington transistor1999 Apr 23Product specificationSupersedes data of 1997 Apr 16Philips Semiconductors Product specificationPNP Darlington transistor BC516FEATURES PINNING High current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 30 V)1 emitter Very high DC current gain (min. 30000).2

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BC546; BC547NPN general purpose transistors1999 Apr 15Product specificationSupersedes data of 1997 Mar 04Philips Semiconductors Product specificationNPN general purpose transistors BC546; BC547FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 65 V).1 emitter2 baseAPPLICATIONS

BC847/BC547 series45 V, 100 mA NPN general-purpose transistorsRev. 07 10 December 2008 Product data sheet1. Product profile1.1 General descriptionNPN general-purpose transistors in small plastic packages.Table 1. Product overviewType number[1] Package PNP complementNXP JEITA JEDECBC847 SOT23 - TO-236AB BC857BC847A BC857ABC847B BC857BBC847B/DG -BC847C BC857CBC847W

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186JC549; JC550NPN general purpose transistors1997 Jul 08Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN general purpose transistors JC549; JC550FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (

Phi I i ps Semi cnduct rsPrduct speci ficat i n Phi l i ps Semi conduct ors Product speci ficat i onNPN generaI purpse t ransi st rsBC546; BC547 NPN gener al purpose t ransist orsBC546; BC547FEATURES PI NNI NG THERMAL CHARACTERI STI CS Low cur r ent (max. 100mA)PINDESCRI PTI ON SYMBOLPARAMETERCONDI TI ONS VALUE UNI T Low vol t age (max. 65 V).1 emi t t er Rthj-a t

BC547BBC547CSMALL SIGNAL NPN TRANSISTORSOrdering Code Marking Package / ShipmentBC547B BC547B TO-92 / BulkBC547B-AP BC547B TO-92 / AmmopackBC547C BC547C TO-92 / BulkBC547C-AP BC547C TO-92 / Ammopack SILICON EPITAXIAL PLANAR NPNTRANSISTORS TO-92 PACKAGE SUITABLE FORTHROUGH-HOLE PCB ASSEMBLYTO-92 TO-92 BC547B - THE PNP COMPLEMENTARYBulk AmmopackTYPE IS BC557BAP

STB4NC50N-CHANNEL 500V - 2.2 - 4A D2PAKPowerMeshII MOSFETTYPE VDSS RDS(on) IDSTB4NC50 500V

STS8C5H30LN-channel 30 V, 0.018 , 8 A, P-channel 30 V, 0.045 , 5 A SO-8low gate charge STripFET III MOSFETFeaturesRDS(on) Type VDSS IDmaxSTS8C5H30L(N-channel) 30 V

STD2NC50STD2NC50-1N-CHANNEL 500V - 3 - 2.2A DPAK/IPAKPowerMeshII MOSFETTYPE VDSS RDS(on) IDSTD2NC50 500 V

STU16NC50N-CHANNEL 500V - 0.22 - 16A Max220PowerMeshII MOSFETTYPE VDSS RDS(on) IDSTU16NC50 500V

STP5NC50 - STP5NC50FPSTB5NC50 - STB5NC50-1N-CHANNEL 500V - 1.3 - 5.5A TO-220/FP/D2PAK/I2PAKPowerMeshII MOSFETTYPE VDSS RDS(on) IDSTP5NC50 500 V

STC5DNF30VN-channel 30 V, 0.027 , 5 A TSSOP82.7 V - driver STripFET Power MOSFETFeaturesType VDSS RDS(on) max ID

STP8NC50 - STP8NC50FPSTB8NC50-1N-CHANNEL 500V - 0.7 - 8A TO-220/TO-220FP/I2PAKPowerMeshII MOSFETTYPE VDSS RDS(on) IDSTP(B)8NC50(-1) 500 V

STP4NC50STP4NC50FPN-CHANNEL 500V - 2.2 - 3.5A TO-220/TO-220FPPowerMeshII MOSFETTYPE VDSS RDS(on) IDSTP4NC50 500 V

BC557BSMALL SIGNAL PNP TRANSISTOROrdering Code Marking Package / ShipmentBC557B BC557B TO-92 / BulkBC557B-AP BC557B TO-92 / Ammopack SILICON EPITAXIAL PLANAR PNPTRANSISTOR TO-92 PACKAGE SUITABLE FORTHROUGH-HOLE PCB ASSEMBLY THE NPN COMPLEMENTARY TYPE ISBC547BTO-92 TO-92Bulk AmmopackAPPLICATIONS WELL SUITABLE FOR TV AND HOMEAPPLIANCE EQUIPMENT SMALL LOAD SWIT

STC5NF20VN-channel 20V - 0.030 - 5A - TSSOP82.7V-drive STripFET II Power MOSFETFeaturesType VDSS RDS(on) ID

STC5NF30VN-channel 30V - 0.027 - 5A - TSSOP82.7V-drive STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) ID

STP3NC50N-CHANNEL 500V - 3 - 2.8A TO-220PowerMeshII MOSFETTYPE VDSS RDS(on) IDSTP3NC50 500 V

STW20NC50N-CHANNEL 500V - 0.22 - 18.4A TO-247PowerMeshII MOSFETTYPE VDSS RDS(on) IDSTW20NC50 500V

STB8NC50N-CHANNEL 500V - 0.7 - 8A D2PAKPowerMeshII MOSFETTYPE VDSS RDS(on) IDSTB8NC50 500V

2STC5948High power NPN epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO = 250 V Complementary to 2STA2120 Typical ft = 25 MHz Fully characterized at 125 oC3Application21 Audio power amplifierTO-3PDescriptionThe device is a NPN transistor manufactured Figure 1. Internal schematic diagramusing new BiT-LA (Bipolar transistor for

STW14NC50N-CHANNEL 500V - 0.31 - 14A TO-247PowerMeshII MOSFETTYPE VDSS RDS(on) IDSTW14NC50 500V

2STC5200High power NPN epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO > 230V Complementary to 2STA1943 Fast-switching speed Typical fT = 30 MHzApplication321 Audio power amplifierTO-264DescriptionThis device is a NPN transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resulting

STP10NC50STP10NC50FPN - CHANNEL 500V - 0.48 - 10A - TO-220/TO-220FPPowerMESH MOSFETPRELIMINARY DATATYPE V R IDSS DS(on) DSTP10NC50 500 V

2STC5242High power NPN epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO = 230 V Complementary to 2STA1962 Fast-switching speed Typical fT = 30 MHzApplication321 Audio power amplifier TO-3PDescriptionThis device is a NPN transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resultin

STU13NC50N-CHANNEL 500V - 0.31 - 13A Max220PowerMeshII MOSFETTYPE VDSS RDS(on) IDSTU13NC50 500V

2SC5200High power NPN epitaxial planar bipolar transistorPreliminary dataFeatures High breakdown voltage VCEO = 230 V Typical fT = 30 MHzApplication Audio power amplifier321DescriptionTO-264This device is a NPN transistor manufactured using new BiT-LA (bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity

2STC5949High power NPN epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO = 250 V Complementary to 2STA2121 Typical ft = 25 MHz Fully characterized at 125 oCApplication Audio power amplifierTO-264DescriptionThe device is a NPN transistor manufactured Figure 1. Internal schematic diagramusing new BiT-LA (Bipolar transistor for linear

STE53NC50N-CHANNEL 500V - 0.070 - 53A ISOTOPPowerMeshII MOSFETTYPE VDSS RDS(on) IDSTE53NC50 500V

2SC5339 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5339 HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 5 V (Max.) CE (sat) High Speed : t = 0.2 s (Typ.) f Bult-in Damper Type Collector Metal (Fin) is Fully Covered with Mo

TTC5460B NPNTTC5460BTTC5460BTTC5460BTTC5460B1. 1. 1. 1. 2. 2. 2. 2. (1) :VCEO = 800 V 3. ()3.

2SC5906 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5906 High-Speed Switching Applications Unit: mmDC-DC Converter Applications Strobe Applications High DC current gain: hFE = 200 to 500 (IC = 0.5 A) Low collector-emitter saturation voltage: VCE (sat) = 0.2 V (max) High-speed switching: tf = 25 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristi

2SC5886A TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886A High-Speed Switching Applications Unit: mmDC/DC Converter Applications High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) Low collector-emitter saturation: VCE (sat) = 0.22 V (max) High-speed switching: tf = 95 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitColl

2SC5200NBipolar Transistors Silicon NPN Triple-Diffused Type2SC5200N2SC5200N2SC5200N2SC5200N1. Applications1. Applications1. Applications1. Applications Power Amplifiers2. Features2. Features2. Features2. Features(1) High collector voltage: VCEO = 230 V (min)(2) Complementary to 2SA1943N(3) Recommended for 100-W high-fidelity audio frequency amplifier output

2SC5612 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5612 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV Unit: mm High Voltage : VCBO = 2000 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t = 0.15s (Typ.) f MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNITCollector-Base Voltage VCBO 2000 VCollector-Emitter Voltage VCEO 90

2SC5930 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) 2SC5930 High-Speed and High-Voltage Switching Applications Unit: mmSwitching Regulator Applications DC-DC Converter Applications High-speed switching: tf = 0.3 s (max) (IC = 0.3 A) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 600 VCollecto

2SC5445 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5445 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t (2) = 0.1 s (Typ.) f MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNIT

2SC5171 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5171 Power Amplifier Applications Unit: mmDriver Stage Amplifier Applications High transition frequency: fT = 200 MHz (typ.) Complementary to 2SA1930 Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 180 VCollector-emitter voltage VCEO 180 VEmitter-base voltage VEBO

2SC5784 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5784 Industrial Applications High-Speed Switching Applications Unit: mm DC-DC Converter Applications High DC current gain: hFE = 400 to 1000 (I = 0.15 A) C Low collector-emitter saturation voltage: V = 0.12 V (max) CE (sat) High-speed switching: t = 45 ns (typ.) fMaximum Ratings (Ta == 25C) ==

2SC5254 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5254 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure: NF = 1.5dB (f = 2 GHz) High gain: Gain = 8.5dB (f = 2 GHz) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 15 VCollector-emitter voltage VCEO 7 VEmitter-base voltage VEBO 1

2SC5748 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5748 Horizontal Deflection Output for HDTV&Digital TV. Unit: mm High voltage: VCBO = 2000 V Low saturation voltage: V = 3 V (max) CE (sat) High speed: t = 0.15 s (typ.) fMaximum Ratings (Tc == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 2000 VCollector-emi

2SC5588 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5588 Unit: mm HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY COLOR TV FOR DIGITAL TV & HDTV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1700 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t (2) = 0.1s (Typ.) f MAXIMUM RATINGS (Tc = 25C) CHARACTER

2SC5232 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC5232 General Purpose Amplifier Applications Unit: mm Switching and Muting Switch Application Low saturation voltage: VCE (sat) (1) = 15 mV (typ.) @I = 10 mA/I = 0.5 mA C B Large collector current: I = 500 mA (max) CMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitColle

2SC5255 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5255 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure: NF = 1.5dB (f = 2 GHz) High gain: Gain = 8.5dB (f = 2 GHz) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 15 VCollector-emitter voltage VCEO 7 VEmitter-base voltage VEBO 1

2SC5108FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5108FT For VCO Application Unit: mm Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 3 VBase current IB 15 mACollector current IC 30 mACollector power dissipation PC 100 mWJunction tempera

2SC5376FV TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376FV Audio Frequency General Purpose Amplifier Applications Unit: mmFor Muting and Switching Applications Low Collector Saturation Voltage: VCE (sat) (1) = 15 mV (typ.) 1.20.05 @IC = 10 mA/IB = 0.5 mA 0.80.05 High Collector Current: IC = 400 mA (max) 1 2 3Absolute Maximum Ratings (Ta = 25C)

2SC5097 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5097 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.8dB, |S |2 = 10dB (f = 2 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 1.5 V

2SC5091 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5091 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 13dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 1.5 V

2SC5322FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5322FT VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure: NF = 1.4dB (f = 2 GHz) High gain: |S |2 = 10dB (f = 2 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 8 VCollector-emitter voltage VCEO 5 VEmitter-base voltag

2SC5703 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5703 Industrial Applications High-Speed Switching Applications Unit: mm DC-DC Converter Applications Strobe Applications High DC current gain: hFE = 400 to 1000 (I = 0.5 A) C Low collector-emitter saturation voltage: V = 0.12 V (max) CE (sat) High-speed switching: t = 55 ns (typ.) fMaximum Ratings (T

2SC5066 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5066 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 12dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 VB

2SC5356 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC5356 High Voltage Switching Applications Unit: mm Switching Regulator Applications DC-DC Converter Applications Excellent switching times: tf = 0.5 s (max) (I = 1.2 A) C High collectors breakdown voltage: V = 800 V CEO High DC current gain: h = 15 (min) (I = 0.15 A) FE CMaximum Ra

2SC5738 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5738 Industrial Applications High-Speed Switching Applications Unit: mm DC-DC Converter Applications High DC current gain: hFE = 400 to 1000 (I = 0.5 A) C Low collector-emitter saturation voltage: V = 0.15 V (max) CE (sat) High-speed switching: t = 90 ns (typ.) fMaximum Ratings (Ta == 25C) ==

2SC5765 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5765 MEDIUM POWER AMPLIFIER APPLICATIONS Unit: mm STOROBO FLASH APPLICATIONS Low Saturation Voltage: VCE (sat) (1) = 0.27 V (max.) (I = 3 A/I = 60 mA) C BMaximum Ratings (Ta == 25C) ==Characteristic Symbol Rating UnitCollector-Base voltage VCBO 15 VCollector-Emitter voltage VCEO 10 VEmitter-Ba

2SC5446 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5446 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1700 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t (2) = 0.1 s (Typ.) f MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNIT

2SC5570 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5570 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1700 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t (2) = 0.1 s (Typ.) fMAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNITC

2SC5280 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5280 HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 5 V (Max.) CE (sat) High Speed : t = 0.2 s (Typ.) f Bult-in Damper Type Collector Metal (Fin) is Fully Covered with Mo

2SC5716 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5716 Horizontal Deflection Output for High Resolution Display, Unit: mm Color TV High voltage: V = 1700 V CBO High speed: t (2) = 0.2 s (typ.) f Collector metal (fin) is fully covered with mold resin. Maximum Ratings (Tc == 25C) ==Characteristics Symbol Rating UnitCollector-base vo

2SC5720 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5720 MEDIUM POWER AMPLIFIER APPLICATIONS Unit: mm STOROBO FLASH APPLICATIONS Low Saturation Voltage: VCE (sat) (1) = 0.25 V (max) (I = 3 A/I = 60 mA) C BMaximum Ratings (Ta == 25C) ==Characteristic Symbol Rating UnitCollector-Base voltage VCBO 15 VCollector-Emitter voltage VCEO 10 VEmitter-Bas

2SC5096FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5096FT VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.8dB, |S |2 = 7.5dB (f = 2 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 8 VEmitter-base voltage VEBO 1.

2SC5714 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5714 Industrial Applications High-Speed Switching Applications Unit: mm DC-DC Converter Applications Strobe Applications High DC current gain: hFE = 400 to 1000 (I = 0.5 A) C Low collector-emitter saturation voltage: V = 0.15 V (max) CE (sat) High-speed switching: t = 90 ns (typ.) fMaximum Ratings (T

2SC5109 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5109 For VCO Application Unit: mm Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 3 VBase current IB 30 mACollector current IC 60 mACollector power dissipation PC 150 mWJunction temperature

2SC5589 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5589 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV Unit: mm HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t (2) = 0.1 s (Typ.) f MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNITCo

2SC5198 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = 140 V (min) Complementary to 2SA1941 Suitable for use in 70-W high fidelity audio amplifiers output stage Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 140 VCollector-em

2SC5713 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5713 Industrial Applications High-Speed Switching Applications Unit: mm DC-DC Converter Applications Strobe Applications High DC current gain: hFE = 400 to 1000 (I = 0.5 A) C Low collector-emitter saturation voltage: V = 0.15 V (max) CE (sat) High-speed switching: t = 50 ns (typ.) fMaximum Ratings (T

2SC5386 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5386 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t = 0.15 s (Typ.) f Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RA

2SC5198 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = 140 V (min) Complementary to 2SA1941 Suitable for use in 70-W high fidelity audio amplifiers output stage Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 140 VCollector-em

2SC5111FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5111FT For VCO Application Unit: mm Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 3 VBase current IB 30 mACollector current IC 60 mACollector power dissipation PC 100 mWJunction tempera

2SC5810 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5810 High-Speed Switching Applications Unit: mm DC-DC Converter Applications Strobe Applications High DC current gain: hFE = 400 to 1000 (I = 0.1 A) C Low collector-emitter saturation voltage: V = 0.17 V (max) CE (sat) High-speed switching: t = 85 ns (typ.) fMaximum Ratings (Ta = 25C) Characteristi

2SC5094 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5094 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.8dB, |S |2 = 7.5dB (f = 2 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 1.5 V

2SC5317 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5317 VHF~UHF Band Low Noise Amplifier Applications Unit: mm (chip: fT = 16 GHz series) Low noise figure: NF = 1.3dB (f = 2 GHz) High gain: Ga = 9dB (f = 2 GHz) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 8 VCollector-emitter voltage VCEO 5 VEmi

2SC5090 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5090 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 13dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 1.5 V

2SC5111 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5111 For VCO Application Unit: mm Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 3 VBase current IB 30 mACollector current IC 60 mACollector power dissipation PC 100 mWJunction temperature

2SC5359 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier Applications Unit: mm High breakdown voltage: V = 230 V CEO Complementary to 2SA1987 Suitable for use in 100-W high fidelity audio amplifiers output stage. Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 230 VCollector-emitter volta

2SC5411 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5411 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t = 0.15 s (Typ.) f Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RA

2SC5439 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5439 Switching Regulator Applications Unit: mmHigh-Voltage Switching Applications DC-DC Converter Applications Inverter Lighting Applications Excellent switching times: tr = 0.2 s (typ.), tf = 0.15 s (typ.) High collector breakdown voltage: VCEO = 450 V Maximum Ratings (Tc = 25C) Characteristics

2SC5096 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5096 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.8dB, |S |2 = 7.5dB (f = 2 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 1.5 V

2SC5819 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5819 Industrial Applications High-Speed Switching Applications Unit: mm DC-DC Converter Applications High DC current gain: hFE = 400 to 1000 (I = 0.15 A) C Low collector-emitter saturation voltage: V = 0.12 V (max) CE (sat) High-speed switching: t = 45 ns (typ.) fMaximum Ratings (Ta == 25C) ==

2SC5088 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5088 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 13dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 VB

2SC5064 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5064 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 12dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 VB

2SC5949 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5949 Power Amplifier Applications Unit: mm PC = 220W Complementary to 2SA2121 Maximum Ratings (Tc = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO 200 VCollector-emitter voltage VCEO 200 VEmitter-base voltage VEBO 5 VCollector current IC 15 ABase current IB 1.5 ACollector powe

2SC5859 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5859 HORIZONTAL DEFLECTION OUTPUT FOR Unit: mmHDTV, DIGITAL TV, PROJECTION TV High Voltage : V = 1700 V CBO Low Saturation Voltage : VCE (sat) = 3 V (max) High Speed : tf(2) = 0.1 s (Typ.) MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNITCollector-Base Voltage VCBO 1700 VCollector-Emi

TTC5200 TOSHIBA Transistor Silicon NPN Triple Diffused Type TTC5200 Power Amplifier Applications Unit: mm High collector voltage: VCEO = 230 V (min) Complementary to TTA1943 Recommended for 100-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 230 VCo

2SC5421 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5421 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 3 V (Max.) CE (sat)MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNITCollector-Base Voltage VCBO 1500 VCollecto

2SC5587 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5587 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t (2) = 0.1 s (Typ.) f MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNIT

2SC5065 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5065 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 12dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 VB

2SC5465 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5465 Industrial Applications Switching Regulator and High Voltage Switching Unit: mm Applications High Speed DC-DC Converter Applications Excellent switching times: tr = 0.7 s (max) t = 0.5 s (max) (I = 0.08 A) f C High collector breakdown voltage: V = 800 V CEOMaximum Ratings (Ta = 25C) Cha

2SC5084 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5084 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 11dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 VB

2SC5712 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5712 High-Speed Switching Applications Unit: mmDC-DC Converter Applications DC-AC Converter Applications High DC current gain: hFE = 400 to 1000 (IC = 0.3 A) Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max) High-speed switching: tf = 120 ns (typ.) Absolute Maximum Ratings (Ta = 25C) C

2SC5387 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5387 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t = 0.15 s (Typ.) f Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RA

2SC5376F TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376F Audio Frequency General Purpose Amplifier Applications Unit: mm For Muting and Switching Applications Low Collector Saturation Voltage: VCE (sat) (1) = 15 mV (typ.) @I = 10 mA/I = 0.5 mA C B High Collector Current: I = 400 mA (max) CMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating

2SC5376CT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC5376CT General Purpose Amplifier Applications Unit: mmSwitching and Muting Switch Applications 0.60.050.50.03 Low saturation voltage: VCE (sat) (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA Large collector current: IC = 400 mA (max) Absolute Maximum Ratings (Ta = 25C) 0.35

2SC5089 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5089 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 13dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 1.5 V

2SC5458 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5458 Industrial Applications Switching Regulator and High Voltage Switching Unit: mm Applications DC-DC Converter Applications DC-AC Inverter Applications Excellent switching times: tr = 0.5 s (max) t = 0.3 s (max) (I = 0.4 A) f C High collector breakdown voltage: V = 400 V CEOMaximum Ratings

2SC5464 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5464 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 12dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 VC

2SC5548 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5548 High Voltage Switching Applications Unit: mm Switching Regulator Applications DC-DC Converter Applications High speed switching: tr = 0.5 s (max), t = 0.3 s (max) (I = 0.8 A) f C High collector breakdown voltage: V = 370 V CEO High DC current gain: h = 60 (min) (I = 0.2 A) FE CMaximum Ra

HN3C51F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN3C51F Unit: mmAudio Frequency General Purpose Amplifier Applications High voltage : VCEO = 120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristic Symbol Rating UnitCollector-base vo

2SC5110 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5110 For VCO Application Unit: mm Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 3 VBase current IB 30 mACollector current IC 60 mACollector power dissipation PC 100 mWJunction temperature

2SC5085 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5085 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 11dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 VB

2SC5464FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5464FT VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 12dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3

2SC5093 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5093 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.8dB, |S |2 = 9.5dB (f = 2 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 1.5 V

2SC5322 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5322 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure: NF = 1.4dB (f = 2 GHz) High gain: Ga = 10dB (f = 2 GHz) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 8 VCollector-emitter voltage VCEO 5 VEmitter-base voltage VEBO 1.5 V

2SC5755 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5755 High-Speed Switching Applications Unit: mm DC-DC Converter Applications Strobe Applications High DC current gain: hFE = 400 to 1000 (I = 0.2 A) C Low collector-emitter saturation voltage: V = 0.12 V (max) CE (sat) High-speed switching: t = 25 ns (typ.) fMaximum Ratings (Ta == 25C) ==Char

2SC5233 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC5233 General Purpose Amplifier Applications Unit: mm Switching and Muting Switch Application Low saturation voltage: VCE (sat) (1) = 15 mV (typ.) @I = 10 mA/I = 0.5 mA C B Large collector current: I = 500 mA (max) CMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitColle

HN3C56FU TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN3C56FU Unit: mmAudio Frequency General Purpose Amplifier Applications Small package (dual type) High voltage and high current : VCEO = 50V, IC = 150mA (max) High hFE : hFE = 120~400 Excellent hFE linearity : hFE (IC = 0.1mA) / (IC = 2mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25C) (Q1,

2SC5858 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5858 HORIZONTAL DEFLECTION OUTPUT FOR Unit: mmHDTV, DIGITAL TV, PROJECTION TV High Voltage : VCBO = 1700 V Low Saturation Voltage : VCE (sat) = 1.5 V (Max) High Speed : tf(2) = 0.1 s (Typ.) ABSOLUTE MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNITCollector-Base Voltage VCBO 1700 VC

2SC5098 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5098 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.8dB, |S |2 = 10dB (f = 2 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 1.5 V

2SC5548A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5548A High Voltage Switching Applications Unit: mm Switching Regulator Applications DC-DC Converter Applications High speed switching: tr = 0.5 s (max), t = 0.3 s (max) (I = 0.8 A) f C High collector breakdown voltage: V = 400 V CEO High DC current gain: h = 40 (min) (I = 0.2 A) FE CMaximum

2SC5717 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5717 Horizontal Deflection Output for Super High Resolution Unit: mm Display, Color TV, Digital TV. High Speed Switching Applications. High voltage: VCBO = 1500 V Low saturation voltage: V = 3 V (max) CE (sat) High speed: t (2) = 0.1 s (typ.) fMaximum Ratings (Tc == 25C) ==Charact

2SC5087R TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5087R VHF to UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S21e|2 = 13.5dB (f = 1 GHz) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 V

2SC5856 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5856 HORIZONTAL DEFLECTION OUTPUT FOR Unit: mmSUPER HIGH RESOLUTION DISPLAY, COLOR TV, DIGITAL TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : VCE (sat) = 3 V (max) High Speed : tf(2) = 0.1 s (typ.) ABSOLUTE MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC S

2SC5590 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5590 HORIZONTAL DEFLECTION OUTPUT FOR SUPER Unit: mm HIGH RESOLUTION DISPLAY, COLOR TV FOR MULTI-MEDIA & HDTV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1700 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t (2) = 0.1s (Typ.) f MAXIMUM RATINGS (Tc = 25C) CHARACT

2SC5208 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5208 High-Voltage Switching Applications Unit: mmSwitching Regulator Applications DC-DC Converter Applications DC-AC Inverter Applications High-speed switching: tr = 1.0 s (max) ,tf = 1.5 s (max) High breakdown voltage: VCEO = 400 V Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating

2SC5066FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5066FT VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 12dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3

2SC5084 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5084 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S21e|2 = 11dB (f = 1 GHz) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 VBase

2SC5692 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5692 Industrial Applications High-Speed Switching Applications Unit: mm DC-DC Converter Applications Strobe Applications High DC current gain: hFE = 400 to 1000 (I = 0.3 A) C Low collector-emitter saturation voltage: V = 0.14 V (max) CE (sat) High-speed switching: t = 120 ns (typ.) fMaximum Ratings (

2SC5695 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5695 Horizontal Deflection Output for High Resolution Display, Unit: mm Color TV High voltage: VCBO = 1500 V Low saturation voltage: V = 3 V (max) CE (sat) High speed: t (2) = 0.1 s (typ.) fMaximum Ratings (Tc == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO

2SC5108 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5108 For VCO Application Unit: mm Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 3 VBase current IB 15 mACollector current IC 30 mACollector power dissipation PC 100 mWJunction temperature

2SC5091FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5091FT VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 13dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 8 VEmitter-base voltage VEBO 1.5

2SC5092 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5092 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.8dB, |S |2 = 9.5dB (f = 2 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 1.5 V

2SC5319 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5319 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure: NF = 1.3dB (f = 2 GHz) High gain: Ga = 11.5dB (f = 2 GHz) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 8 VCollector-emitter voltage VCEO 5 VEmitter-base voltage VEBO 1.5

2SC5948 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5948 Power Amplifier Applications Unit: mm Complementary to 2SA2120 Recommended for audio frequency amplifier output stage. Absolute Maximum Ratings (Tc = 25C) Characteristic Symbol Rating UnitVCBOCollector-base voltage 200 V VCEOCollector-emitter voltage 200 V VEBOEmitter-base voltage 5 V Coll

2SC5422 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5422 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1700 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t = 0.15 s (Typ.) fMAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNITColl

2SC5086 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5086 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 11dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 VB

2SC5976 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5976 High-Speed Switching Applications Unit: mmDC-DC Converter Applications +0.2 2.8-0.3 Strobe Flash Applications +0.2 1.6-0.1 High DC current gain: hFE = 250 to 400 (IC = 0.3 A) 1 Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max) High-speed switching: tf = 25 ns (typ.) 32 A

2SC5086FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5086FT VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 11dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3

2SC5376 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376 Audio Frequency General Purpose Amplifier Applications Unit: mm For Muting and Switching Applications Low collector saturation voltage: VCE (sat) (1) = 15 mV (typ.) @I = 10 mA/I = 0.5 mA C B High collector current: I = 400 mA (max) CMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating Un

2SC5200 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = 230 V (min) Complementary to 2SA1943 Suitable for use in 100-W high fidelity audio amplifiers output stage Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 230 V Collecto

2SC5855 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5855 HORIZONTAL DEFLECTION OUTPUT FOR Unit: mmSUPER HIGH RESOLUTION DISPLAY, COLOR TV, DIGITAL TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : VCE (sat) = 3 V (max) High Speed : tf(2) = 0.1 s (typ.) MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING

2SC5242 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5242 Power Amplifier Applications Unit: mm High Collector breakdown voltage: V = 230 V (min) CEO Complementary to 2SA1962 Suitable fro use in 80-W high fidelity audio amplifiers output stage Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 230 VCollector

2SC5463 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5463 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 12dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 VC

2SC5404 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5404 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t = 0.15 s (Typ.) f Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RA

2SC5087 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5087 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 13dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 VB

2SC5200 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications Unit: mm High breakdown voltage: V = 230 V (min) CEO Complementary to 2SA1943 Suitable for use in 100-W high fidelity audio amplifiers output stage Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 230 VCollector-emitter

2SC5107 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5107 For VCO Application Unit: mm Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 3 VBase current IB 15 mACollector current IC 30 mACollector power dissipation PC 100 mWJunction temperature

2SC5095 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5095 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.8dB, |S |2 = 7.5dB (f = 2 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 1.5 V

2SC5106 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5106 For VCO Application Unit: mm Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 3 VBase current IB 15 mACollector current IC 30 mACollector power dissipation PC 150 mWJunction temperature

2SC5886 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886 High-Speed Swtching Applications Unit: mm DC-DC Converter Applications High DC current gain: h = 400 to 1000 (I = 0.5 A) FE C Low collector-emitter saturation: V = 0.22 V (max) CE (sat) High-speed switching: t = 55 ns (typ.) fMaximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollect

2SC5355 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5355 High Voltage Switching Applications Unit: mm Switching Regulator Applications DC-DC Converter Applications Excellent switching times: tr = 0.5 s (max), t = 0.3 s (max) f High collector breakdown voltage: V = 400 V CEO High DC current gain: h = 20 (min) FEMaximum Ratings (Ta = 25C)

HN4C51J TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN4C51J Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage : VCEO = 120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) Low noise : NF = 1dB(typ.) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristic Symbol

2SC5785 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5785 Industrial Applications High-Speed Switching Applications Unit: mm DC-DC Converter Applications Strobe Applications High DC current gain: hFE = 400 to 1000 (I = 0.2 A) C Low collector-emitter saturation voltage: V = 0.12 V (max) CE (sat) High-speed switching: t = 25 ns (typ.) fMaximum Ratings (T

2SC5317FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5317FT VHF~UHF Band Low Noise Amplifier Applications Unit: mm (chip: fT = 16 GHz series) Low noise figure: NF = 1.3dB (f = 2 GHz) High gain: |S |2 = 9dB (f = 2 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 8 VCollector-emitter voltage V

Ordering number : EN7331A2SA2099 / 2SC5888SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon Transistors2SA2099 / 2SC5888High-Current Switching ApplicationsApplications Relay drivers, lamp drivers, motor drivers.Features Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.S

Ordering number : ENN69922SC5778NPN Triple Diffused Planar Silicon Transistor2SC5778Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeaturesPackage Dimensions High speed.unit : mm High breakdown voltage(VCBO=1600V).2174A High reliability(Adoption of HVP process). Adoption of MBIT process.[2SC5778] On-chip damper diode.5.6

Ordering number : ENN73312SA2099 / 2SC5888PNP / NPN Epitaxial Planar Silicon Transistors2SA2099 / 2SC5888High-Current Switching ApplicationsApplicationsPackage Dimensions Relay drivers, lamp drivers, motor drivers.unit : mm2041AFeatures[2SA2099 / 2SC5888] Adoption of MBIT processes.4.510.02.8 Large current capacitance.3.2 Low collector-to-emitter

Ordering number : ENA1074 2SC5245ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorUHF to S-Band Low-Noise Amplifier2SC5245AOSC ApplicationsFeatures Low-noise : NF=0.9dB typ (f=1GHz).: NF=1.4dB typ (f=1.5GHz). High gain : S21e2=10dB typ (f=1.5GHz). High cut-off frequency : fT=8GHz typ. Low-voltage, low-current operation (VCE=1V, IC=1

Ordering number:EN4784NPN Triple Diffused Planar Silicon Transistor2SC5046Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High reliability (Adoption of HVP process).2048B High breakdown voltage (VCBO=1600V).[2SC5046] Adoption of MBIT process.20.03.35.02.03.40.6

Ordering number:EN5512ANPN Epitaxial Planar Silicon Transistor2SC5347High-Frequency Semi-Power Output Stage,Low-Noise Medium Output Amplifiers ApplicationsFeatures Package Dimensions High frequency medium output amplificationunit:mm(VCE=5V, IC=50mA)2038A: fT=4.7GHz typ (f=1GHz).[2SC5347]2: S21e =8dB typ (f=1GHz).4.5: NF=1.8dB typ (f=1GHz). 1.51.60.4 0

Ordering number : ENA1077 2SC5231ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorVHF to UHF Wide-Band Low-Noise2SC5231AAmplifier ApplicationsFeatures Low-noise : NF=1.0dB typ (f=1GHz). High gain : S21e2=12dB typ (f=1GHz). High cut-off frequency : fT=7GHz typ. Ultrasmall-sized package permitting applied sets to be made small and slim.

Ordering number:EN5541ANPN Epitaxial Planar Silicon Transistor2SC5375VHF to UHF Band OSC,High-Frequency Amplifiers ApplicationsFeatures Package Dimensions2 High gain : S21e =10dB typ (f=1GHz).unit:mm High cutoff frequency : fT=5.2GHz typ.2059B[2SC5375]0.30.1530 to 0.11 20.3 0.60.65 0.650.92.01 : Base2 : Emitter3 : CollectorSANYO : MCP

Ordering number : ENN73512SC5665NPN Epitaxial Planar Silicon Transistor2SC5665High-Frequency Low-Noise Amplifierand OSC ApplicationsFeatures Package Dimensions Low-noise use : NF=1.5dB typ (f=2GHz). unit : mm High cut-off frequency : fT=6.5GHz typ (VCE=1V). 2106A: fT=11.2GHz typ (VCE=3V).[2SC5665] Low operating voltage.0.750.30.630~0.11 20.10.20.

Ordering number:ENN6291NPN Epitaxial Planar Silicon Transistor2SC5538VHF to UHF OSC,High-Frequency Amplifier ApplicationsFeatures Package Dimensions2 High gain : S21e =10.5dB typ (f=1GHz).unit:mm High cutoff frequency : fT=5.2GHz typ.2159 Ultrasmall, slim flat-lead package.[2SC5538](1.4mm 0.8mm 0.6mm)1.40.10.2531 20.450.21 : Base2

Ordering number:EN5035NPN Epitaxial Planar Silicon Transistor2SC5228VHF to UHF Wide-Band Low-NoiseAmplifier ApplicationsFeatures Package Dimensions Low noise : NF=1.0dB typ (f=1GHz).unit:mm2 High gain : S21e =13.5dB typ (f=1GHz).2110A High cutoff frequency : fT=7GHz typ.[2SC5228]1.90.95 0.950.40.164 30 to 0.1210.60.95 0.851 : Emitter

Ordering number:EN4783NPN Triple Diffused Planar Silicon Transistor2SC5045Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High reliability (Adoption of HVP process).2039D High breakdown voltage (VCBO=1600V).[2SC5045] Adoption of MBIT process.16.05.63.43.12.82.0

Ordering number : ENN8029 2SC5999NPN Epitaxial Planar Silicon Transistors2SC5999High-Current Switching ApplicationsApplications Relay drivers, lamp drivers, motor drivers, inverters.Features Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Surface mount type.SpecificationsAbsolute

Ordering number:EN4780NPN Triple Diffused Planar Silicon Transistor2SC5042Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High reliability (HVP process).2039D High breakdown voltage (VCBO=1600V).[2SC5042] Adoption of MBIT process.16.05.63.43.12.82.0 2.01.00.

Ordering number : ENA1080 2SC5415ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorHigh-Frequency Low-Noise2SC5415AAmplifier ApplicationsFeatures High gain : S21e2=9dB typ (f=1GHz). High cut-off frequency : fT=6.7GHz typ.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VC

Ordering number:ENN5817ANPN Triple Diffused Planar Silicon Transistor2SC5417LSInverter Lighting ApplicationsFeatures Package Dimensions High breakdown voltage.unit:mm High reliability (Adoption of HVP process).2079D Adoption of MBIT process.[2SC5417]10.0 4.53.22.80.91.2 1.20.75 0.71 2 3 1:Base2:Collector3:EmitterSpecifications2.55 2.55SANYO:T

Ordering number : ENN6913A2SA2040 / 2SC5707PNP / NPN Epitaxial Planar Silicon Transistors2SA2040 / 2SC5707High Current Switching ApplicationsApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash.Features Adoption of FBET and MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switchin

Ordering number : ENN6309B2SA2016 / 2SC5569PNP / NPN Epitaxial Planar Silicon Transistors2SA2016 / 2SC5569DC / DC Converter ApplicationsApplications Relay drivers, lamp drivers, motor drivers, flash.Features Adoption of FBET and MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall packag

Ordering number : ENN6403A2SC5607NPN Epitaxial Planar Silicon Transistor2SC5607DC / DC Converter ApplicationsApplications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit : mm2033AFeatures[2SC5607] Adoption of MBIT processes. 2.24.0 Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.

Ordering number:EN4779NPN Triple Diffused Planar Silicon Transistor2SC5041Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High reliability (HVP process).2039D High breakdown voltage (VCBO=1600V).[2SC5041] Adoption of MBIT process.16.05.63.4 On-chip damper diode.

Ordering number:EN5293NPN Triple Diffused Planar Silicon Transistor2SC5299Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed : tf=100ns typ.unit:mm High breakdown voltage : VCBO=1500V.2039D High reliability (Adoption of HVP process).[2SC5299] Adoption of MBIT process.16.05.63.43.12.82.0

Ordering number:ENN6306PNP/NPN Epitaxial Planar Silicon Transistors2SA2012/2SC5565DC/DC Converter ApplicationsApplications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit:mm2038AFeatures [2SA2012/2SC5565]4.5 Adoption of MBIT processes.1.51.6 Large current capacitance. Low collector-to-emitter saturation voltage. Ultrasmall-

Ordering number : ENA1092 2SC5536ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorVHF Low-Noise Amplifier,2SC5536AOSC ApplicationsFeatures Low-noise : NF=1.8dB typ (f=150MHz). High gain : S21e2=16dB typ (f=150MHz). Ultrasmall, slim flat-lead package (1.4mm0.8mm0.6mm). Halogen free compliance.SpecificationsAbsolute Maximum Ra

Ordering number:ENN6465NPN Triple Diffused Planar Silicon Transistor2SC5637Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2174 High reliability (Adoption of HVP process).[2SC5637] Adoption of MBIT process.3.4 5.616.03.12.82.0 2

Ordering number:ENN6177NPN Triple Diffused Planar Silicon Transistor2SC5303Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2111A High reliability (Adoption of HVP process).[2SC5303] Adoption of MBIT process.20.0 5.01.751.02.91.2

Ordering number:EN5046NPN Epitaxial Planar Silicon Transistor2SC5230VHF to UHF Wide-Band Low-NoiseAmplifier ApplicationsFeatures Package Dimensions Low noise : NF=1.0dB typ (f=1GHz).unit:mm2 High gain : S21e =10.5dB typ (f=1GHz).2004B High cutoff frequency : fT=6.5GHz typ.[2SC5230]5.04.04.00.450.50.440.451 : Base2 : Emitter3 : Collecto

Ordering number:ENN5287NPN Triple Diffused Planar Silicon Transistor2SC5264Inverter Lighting ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO=1000V).unit:mm High reliability (Adoption of HVP process).2079C Adoption of MBIT process.[2SC5264]4.510.02.83.20.91.20.70.751 : Base1 2 32 : Collector3 : Emitter2.55 2.55SANYO :

Ordering number : ENN73262SC5647NPN Epitaxial Planar Silicon Transistor2SC5647UHF to S Band Low-Noise Amplifierand OSC ApplicationsFeatures Package Dimensions Low noise : NF=2.6dB typ (f=2GHz). unit : mm High cutoff frequency : fT=9.0GHz typ (VCE=1V). 2106A: fT=11.5GHz typ (VCE=3V).[2SC5647] Low operating voltage.0.75 High gain : S21e2=10.5dB typ (f=2

Ordering number:ENN6341NPN Epitaxial Planar Silicon Transistor2SC5539VHF to UHFLow-Noise Wide-Band Amplifier ApplicationsFeatures Package Dimensions Low noise : NF=1.1dB typ (f=1GHz).unit:mm2 High gain : S21e =12dB typ (f=1GHz).2159 High cutoff frequency : fT=7.5GHz typ.[2SC5539] Ultrasmall, slim flat-lead package.(1.4mm 0.8mm 0.6mm)1.40.

Ordering number:EN5036BNPN Epitaxial Planar Silicon Transistor2SC5231VHF to UHF Wide-Band Low-NoiseAmplifier ApplicationsFeatures Package Dimensions Low noise : NF=1.0dB typ (f=1GHz).unit:mm2 High gain : S21e =12dB typ (f=1GHz).2106A High cutoff frequency : fT=7GHz typ.[2SC5231] Very small-sized package permiting 2SC5231-0.750.30.6applied set

Ordering number : ENA1061 2SC5501ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorVHF to UHF Wide-Band Low-Noise2SC5501AAmplifier ApplicationsFeatures Low-noise : NF=1.0dB typ (f=1GHz). High gain : S21e2=13dB typ (f=1GHz). High cut-off frequency : fT=7GHz typ. Large allowable collector dissipation : PC=500mW max.SpecificationsAbso

Ordering number:ENN6367PNP/NPN Epitaxial Planar Silicon Transistors2SA2022/2SC5610DC/DC Converter ApplicationsApplications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit:mm2041AFeatures [2SA2022/2SC5610]4.5 Adoption of MBIT processes.10.02.8 Large current capacitance.3.2 Low collector-to-emitter saturation voltage. High-

Ordering number:ENN5291NPN Triple Diffused Planar Silicon Transistor2SC5297Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed : tf=100ns typ.unit:mm High breakdown voltage : VCBO=1500V.2039D High reliability (Adoption of HVP process).[2SC5297] Adoption of MBIT process.16.05.63.43.12.82.0

Ordering number:ENN6337NPN Epitaxial Planar Silicon Transistor2SC5541UHF to S BandLow-Noise Amplifier ApplicationsFeatures Package Dimensions Low noise : NF=1.2dB typ (f=2GHz).unit:mm2 High gain : S21e =10dB typ (f=2GHz).2159 High cutoff frequency : fT=13GHz typ.[2SC5541] Ultrasmall, slim flat-lead package.(1.4mm 0.8mm 0.6mm)1.40.10.25

Ordering number:EN5045NPN Epitaxial Planar Silicon Transistor2SC5229VHF to UHF Wide-Band Low-NoiseAmplifier ApplicationsFeatures Package Dimensions Low noise : NF=1.0dB typ (f=1GHz).unit:mm2 High gain : S21e =10.5dB typ (f=1GHz).2038A High cutoff frequency : fT=6.5GHz typ.[2SC5229] Medium power operation : NF=1.7dB typ (f=1GHz).4.521.5(VCE=8V

Ordering number:ENN6281NPN Triple Diffused Planar Silicon Transistor2SC5577Ultrahigh-Definition Color DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2048B High reliability (Adoption of HVP process).[2SC5577] Adoption of MBIT process.20.0 3.35.02.03.40.

Ordering number:ENN6340NPN Epitaxial Planar Silicon Transistor2SC5537Low-Voltage, Low-CurrentHigh-frequency Amplifier ApplicationsFeatures Package Dimensions Low voltage, low current operation : fT=5GHz typ.unit:mm2(VCE=1V, IC=1mA) : S21e =7dB typ (f=1GHz).2159: NF=2.6dB typ (f=1GHz).[2SC5537] Ultrasmall, slim flat-lead package.(1.4mm 0.8mm 0.6mm)

Ordering number : ENN74952SA2098 / 2SC5887PNP / NPN Epitaxial Planar Silicon Transistors2SA2098 / 2SC5887High-Current Switching ApplicationsApplications Package Dimensions Relay drivers, lamp drivers, motor drivers. unit : mm2041AFeatures [2SA2098 / 2SC5887]4.5 Adoption of MBIT processes. 10.02.8 Large current capacitance.3.2 Low collector-to-emitter satu

Ordering number:ENN5287ANPN Triple Diffused Planar Silicon Transistor2SC5264LSInverter Lighting ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO=1000V).unit:mm High reliability (Adoption of HVP process).2079D Adoption of MBIT process.[2SC5264]10.0 4.53.22.80.91.2 1.20.75 0.71 : Base1 2 32 : Collector3 : Emitter2.55 2.55Spe

Ordering number : ENN65882SC5645NPN Epitaxial Planar Silicon Transistor2SC5645UHF to S Band Low-Noise Amplifierand OSC ApplicationsFeatures Package Dimensions Low noise : NF=1.5dB typ (f=2GHz). unit : mm High cutoff frequency : fT=10GHz typ (VCE=1V). 2106A : fT=12.5GHz typ (VCE=3V).[2SC5645] Low-voltage operating . High gain :S21e2=9.5dB typ (f=2GHz). 0

Ordering number:EN4802NPN Epitaxial Planar Silicon Transistor2SC5155Low-FrequencyGeneral-Purpose Amplifier, ApplicationsApplications Package Dimensions Various drivers. unit:mm2045BFeatures [2SC5155]6.5 High current capacity. 2.35.00.54 Adoption of MBIT process. High DC current gain. Low collector-to-emitter saturation voltage. High VEBO.0.8

Ordering number:ENN6288NPN Epitaxial Planar Silicon Transistor2SC5488VHF to UHF Low-Noise Wide-BandAmplifier ApplicationsFeatures Package Dimensions Low noise : NF=1.0dB typ (f=1GHz).unit:mm2 High gain : S21e =12dB typ (f=1GHz).2159 High cutoff frequency : fT=7GHz typ.[2SC5488] Ultrasmall, slim flat-lead package.(1.4mm 0.8mm 0.6mm)1.40.10

Ordering number:EN6070NPN Triple Diffused Planar Silicon Transistor2SC5506Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed.unit:mm High breakdown voltage (VCBO=1600V).2048B High reliability (Adoption of HVP process).[2SC5506] Adoption of MBIT process.20.03.35.02.03.40.61.21 : Base

Ordering number : ENN8091 2SC5980NPN Epitaxial Planar Silicon Transistor2SC5980High-Current Switching ApplicationsApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash.Features Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Narrow hFE width. High

Ordering number : ENN69152SA2044 / 2SC5710PNP / NPN Epitaxial Planar Silicon Transistors2SA2044 / 2SC5710DC / DC Converter ApplicationsApplications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit : mm2045B[2SA2044 / 2SC5710]Features6.5 Adoption of FBET and MBIT processes.2.35.00.54 Large current capacitance. Low collecto

Ordering number : ENN75382SC5899NPN Triple Diffused Planar Silicon Transistor2SC5899Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeaturesPackage Dimensions High speed.unit : mm High breakdown voltage(VCBO=1700V).2174A High reliability(Adoption of HVP process).[2SC5899] Adoption of MBIT process.5.63.416.03.12.82.0 2.

Ordering number : ENN70792SC5808NPN Triple Diffused Planar Silicon Transistor2SC5808Switching Power Supply ApplicationsFeaturesPackage Dimensions High breakdown voltage.unit : mm High speed switching.2045B Wide ASO.[2SC5808] Adoption of MBIT process.6.52.35.00.540.850.71.20.60.51 : Base2 : Collector1 2 33 : Emitter4 : Collector

Ordering number:ENN5883ANPN Triple Diffused Planar Silicon Transistor2SC5304LSInverter Lighting ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO=1000V).unit:mm High reliability (Adoption of HVP process).2079D Adoption of MBIT process.[2SC5304]10.0 4.53.22.80.91.2 1.20.75 0.71:Base1 2 32:Collector3:EmitterSpecifications2.55

Ordering number : ENA1075 2SC5277ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorUHF to S-Band Low-Noise Amplifier2SC5277AOSC ApplicationsFeatures Low-noise : NF=0.9dB typ (f=1GHz).: NF=1.4dB typ (f=1.5GHz). High gain : S21e2=10dB typ (f=1.5GHz). High cut-off frequency : fT=8GHz typ. Low-voltage, low-current operation (VCE=1V, IC=1

Ordering number:EN5184ANPN Epitaxial Planar Silicon Transistor2SC5245UHF to S-Band Low-Noise Amplifier,OSC ApplicationsFeatures Package Dimensions Low noise : NF=0.9dB typ (f=1GHz).unit:mm: NF=1.4dB typ (f=1.5GHz).2059B2 High gain : S21e =10dB typ (f=1.5GHz).[2SC5245] High cutoff frequency : fT=11GHz typ.0.3 Low-voltage, low-current operation0.

Ordering number:ENN6328NPN Epitaxial Planar Silicon Transistor2SC5551High-Frequency Medium-OutputAmplifier ApplicationsFeatures Package Dimensions High fT : (fT=3.5GHz typ).unit:mm Large current : (IC=300mA).2038A Large allowable collector dissipation (1.3W max).[2SC5551]4.51.51.60.4 0.53 2 10.41.53.01 : Base0.752 : Collector3 : EmitterSA

Ordering number:EN5762NPN Triple Diffused Planar Silicon Transistor2SC5420Inverter Lighting ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO=1000V).unit:mm High reliability (Adoption of HVP process).2069B Adoption of MBIT process.[2SC5420]10.24.51.31 2 30 to 0.30.81.20.42.55 2.551 : Base2 : Collector3 : EmitterSANYO : SM

Ordering number : ENN69142SA2043 / 2SC5709PNP / NPN Epitaxial Planar Silicon Transistors2SA2043 / 2SC5709DC / DC Converter ApplicationsApplications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit : mm2045B[2SA2043 / 2SC5709]Features6.5 Adoption of FBET and MBIT processes. 2.35.00.54 Large current capacitance. Low collector

Ordering number:EN5957ANPN Triple Diffused Planar Silicon Transistor2SC5452Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed.unit:mm High breakdown voltage (VCBO=1600V).2039D High reliability (Adoption of HVP process).[2SC5452] Adoption of MBIT process.16.05.63.43.12.82.0 2.01.00.6

Ordering number : ENN65862SA2031 / 2SC5669PNP Epitaxial Planar Silicon TransistorNPN Triple Diffused Planar Silicon Transistor2SA2031 / 2SC5669230V / 15A, AF100W Output ApplicationsFeatures Package Dimensions Large current capacitance. unit : mm Wide ASO and high durability against breakdown. 2022A Adoption of MBIT process.[2SA2031 / 2SC5669]15.63.24.814.0

Ordering number : ENN6896A2SC5690NPN Triple Diffused Planar Silicon Transistor2SC5690Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeaturesPackage Dimensions High speed.unit : mm High breakdown voltage(VCBO=1500V).2174A High reliability(Adoption of HVP process).[2SC5690] Adoption of MBIT process.5.63.416.0 On-chip dam

Ordering number:EN5321NPN Triple Diffused Planar Silicon Transistor2SC5265Inverter-controlled Lighting ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO=1200V).unit:mm High reliability (Adoption of HVP process).2079B Adoption of MBIT process.[2SC5265]4.510.02.83.20.90.71.20.751 : Base1 2 32 : Collector3 : Emitter2.55 2.55

Ordering number : ENN6653A2SC5683NPN Triple Diffused Planar Silicon Transistor2SC5683Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeaturesPackage Dimensions High speed.unit : mm High breakdown voltage(VCBO=1500V).2174A High reliability(Adoption of HVP process).[2SC5683] Adoption of MBIT process.5.63.416.03.12.82.0 2

Ordering number:ENN6466NPN Triple Diffused Planar Silicon Transistor2SC5638Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2174 High reliability (Adoption of HVP process).[2SC5638] Adoption of MBIT process.3.4 5.616.03.12.82.0 2

Ordering number : ENN6324A2SA608N / 2SC536NPNP / NPN Epitaxial Planar Silicon Transistors2SA608N / 2SC536NLow-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions Capable of being used in the low frequency to high unit : mmfrequency range. 2205[2SA608N / 2SC536N]4.5Features3.7 3.5 Large current capacity and wide ASO.0.50.450.441

Ordering number : ENN8035 2SC5994NPN Epitaxial Planar Silicon Transistor2SC5994High-Current Switching ApplicationsApplications Voltage regulators, relay drivers, lamp drivers, electrical equipment.Features Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.SpecificationsAbsolute Maximum Rat

Ordering number : ENN69912SC5777NPN Triple Diffused Planar Silicon Transistor2SC5777Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeaturesPackage Dimensions High speed.unit : mm High breakdown voltage (VCBO=1600V).2174A High reliability (Adoption of HVP process).[2SC5777] Adoption of MBIT process.5.63.4 On-chip damper d

Ordering number:ENN6289NPN Epitaxial Planar Silicon Transistor2SC5490UHF to S BandLow-Noise Amplifier ApplicationsFeatures Package Dimensions Low noise : NF=0.9dB typ (f=1GHz).unit:mm: NF=1.4dB typ (f=1.5GHz).21592 High gain : S21e =10dB typ (f=1.5GHz).[2SC5490] High cutoff frequency : fT=11GHz typ. Ultrasmall, slim flat-lead package.1.4(1.4mm

No. N74512SC5793N7451No.31504 NPN CRT 2SC5793 VCBO=1600V HVP MBIT Absolute Maxi

Ordering number:EN5417ANPN Triple Diffused Planar Silicon Transistor2SC5301Ultrahigh-Definition Color DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2111A High reliability (Adoption of HVP process).[2SC5301] Adoption of MBIT process.20.0 5.01.751.02.91

Ordering number:ENN6280NPN Epitaxial Planar Silicon Transistor2SC5540UHF to S Band Low-Noise Amplifierand OSC ApplicationsFeatures Package Dimensions High cutoff frequency : fT=10GHz typ.unit:mm2 High gain : S21e =13dB typ (f=1GHz).2159 Low noise : NF=1.3dB typ (f=1GHz).[2SC5540] Small Cob : Cob=0.4pF typ. Ultrasmall, slim flat-lead package.1.

Ordering number : ENN6971A2SC5764NPN Triple Diffused Planar Silicon Transistor2SC5764Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage. unit : mm High reliability. 2041A High-speed switching.[2SC5764] Wide ASO.4.510.02.8 Adoption of MBIT process.3.22.41.61.20.70.751 2 31 : Base2.55 2.552 : Collector

Ordering number:EN5958NPN Triple Diffused Planar Silicon Transistor2SC5453Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed.unit:mm High breakdown voltage (VCBO=1600V).2048B High reliability (Adoption of HVP process).[2SC5453] Adoption of MBIT process.20.0 3.35.02.03.40.61.21 : Base

Ordering number:EN5126NPN Triple Diffused Planar Silicon Transistor2SC5238Ultrahigh-Definition Color DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2111A High reliability (Adoption of HVP process).[2SC5238] Adoption of MBIT process.20.0 5.01.751.02.91.

Ordering number:ENN6283NPN Triple Diffused Planar Silicon Transistor2SC5388High-Voltage Switching ApplicationsFeatures Package Dimensions High speed (Adoption of MBIT process).unit:mm High breakdown voltage (VCBO=1500V).2039D High reliability (Adoption of HVP process).[2SC5388] On-chip damper diode.16.05.63.43.12.82.0 2.01.00.61 : Base1 2 3

Ordering number:ENN6223NPN Epitaxial Planar Silicon Transistor2SC5504UHF to S Band Low-NoiseAmplifier ApplicationsFeatures Package Dimensions Low noise : NF=0.9dB typ (f=1GHz).unit:mm: NF=1.4dB typ (f=1.5GHz).21612 High gain : S21e =11dB typ (f=1GHz).[2SC5504] High cutoff frequency : fT=11GHz typ. Low voltage, low current operation.0.65 0.65(VC

Ordering number : ENN6654A2SC5689NPN Triple Diffused Planar Silicon Transistor2SC5689Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeaturesPackage Dimensions High speed.unit : mm High breakdown voltage(VCBO=1500V).2174A High reliability(Adoption of HVP process).[2SC5689] Adoption of MBIT process.5.63.4 On-chip damper di

Ordering number:EN5883NPN Triple Diffused Planar Silicon Transistor2SC5304Inverter Lighting ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO=1000V).unit:mm High reliability (Adoption of HVP process).2079B Adoption of MBIT process.[2SC5304]4.510.02.83.20.90.71.20.751:Base1 2 32:Collector3:Emitter2.55 2.55SANYO:TO-220FI

Ordering number : ENA1120 2SC5646ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorUHF to S-Band Low-Noise Amplifier,2SC5646AOSC ApplicationsFeatures Low-noise : NF=1.5dB typ (f=2GHz). High cut-off frequency : fT=10GHz typ (VCE=1V).: fT=12.5GHz typ (VCE=3V). Low-voltage operation. High gain : S21e2=9.5dB typ (f=2GHz). Ultrasmall

Ordering number : ENN6665A2SC5699NPN Triple Diffused Planar Silicon Transistor2SC5699CRT Display Horizontal DeflectionOutput ApplicationsFeatures Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process).[2SC5699] Adoption of MBIT process.5.63.416.03.12.82.0 2.10.90.71 2 31 :

Ordering number:EN5186NPN Epitaxial Planar Silicon Transistor2SC5276UHF to S Band Low-Noise Amplifier,OSC ApplicationsFeatures Package Dimensions Low noise : NF=0.9dB typ (f=1GHz).unit:mm: NF=1.4dB typ (f=1.5GHz).2110A2 High gain : S21e =11dB typ (f=1.5GHz).[2SC5276]1.9 High cutoff frequency : fT=11GHz typ.0.95 0.95 Low-voltage, low-current ope

Ordering number:EN6101NPN Triple Diffused Planar Silicon Transistor2SC5443Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2048B High reliability (Adoption of HVP process).[2SC5443] Adoption of MBIT process.20.03.35.02.03.40.6

Ordering number:EN5185NPN Epitaxial Planar Silicon Transistor2SC5275UHF to S Band Low-Noise Amplifier,OSC ApplicationsFeatures Package Dimensions Low noise : NF=0.9dB typ (f=1GHz).unit:mm: NF=1.4dB typ (f=1.5GHz).2018B2 High gain : S21e =10dB typ (f=1.5GHz).[2SC5275] High cutoff frequency : fT=11GHz typ.0.4 Low-voltage, low-current operation0.1

Ordering number : ENN69882SA2063 / 2SC5775PNP Epitaxial Planar Silicon TransistorNPN Triple Diffused Planar Silicon Transistor2SA2063 / 2SC5775160V / 12A, AF90W Output ApplicationsFeatures Package Dimensions Large current capacitance. unit : mm Wide ASO and high durability against breakdown. 2022A Adoption of MBIT process.[2SA2063 / 2SC5775]15.63.24.814.02

Ordering number : ENA1081 2SC5414ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorHigh-Frequency Low-Noise2SC5414AAmplifier ApplicationsFeatures High gain : S21e2=9.5dB typ (f=1GHz). High cut-off frequency : fT=6.7GHz typ.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage

Ordering number : ENA1089 2SC5488ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorVHF to UHF Wide-Band Low-Noise2SC5488AAmplifier ApplicationsFeatures Low-noise : NF=1.0dB typ (f=1GHz). High gain : S21e2=12dB typ (f=1GHz). High cut-off frequency : fT=7GHz typ. Ultrasmall, slim flat-lead package (1.4mm0.8mm0.6mm). Halogen fr

Ordering number : ENA1090 2SC5374ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorVHF to UHF Band OSC,2SC5374AHigh-Frequency Amplifier ApplicationsFeatures High gain : S21e2=10.5dB typ (f=1GHz). High cut-off frequency : fT=5.2GHz typ.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-B

Ordering number : ENN76532SC5966NPN Triple Diffused Planar Silicon Transistor2SC5966Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High-speed. unit : mm High breakdown voltage (VCBO=1700V). 2174A High reliability (Adoption of HVP process).[2SC5966] Adoption of MBIT process.5.63.416.03.12.82.0 2.1

Ordering number:EN5535ANPN Epitaxial Planar Silicon Transistor2SC5374VHF to UHF Band OSC,High-Frequency Amplifiers ApplicationsFeatures Package Dimensions2 High gain : S21e =10.5dB typ (f=1GHz).unit:mm High cutoff frequency : fT=5.2GHz typ.2106A[2SC5374]0.750.30.60 to 0.10.20.10.5 0.51.61 : Base2 : Emitter3 : CollectorSANYO : SMCPSpec

Ordering number:EN5955NPN Triple Diffused Planar Silicon Transistor2SC5450Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed.unit:mm High breakdown voltage (VCBO=1600V).2039D High reliability (Adoption of HVP process).[2SC5450] Adoption of MBIT process.16.05.63.43.12.82.0 2.01.00.6

Ordering number:EN6069NPN Epitaxial Planar Silicon Darlington Transistor2SC547685V/3A Driver ApplicationsApplications Package Dimensions Suitable for use in switching of L load (motorunit:mmdrivers, printer hammer drivers, relay drivers).2041A[2SC5476]Features4.510.02.8 High DC current gain.3.2 Large current capacity and wide ASO. Contains a Zener d

Ordering number : ENA1087 2SC5347ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorHigh-Frequency Semi-Power Output Stage,2SC5347ALow-Noise Medium Output Amplifier ApplicationsFeatures High-frequency medium output amplification(VCE=5V, IC=50mA): fT=4.7GHz typ (f=1GHz).:S21e2=8dB typ (f=1GHz).: NF=1.8dB typ (f=1GHz).SpecificationsAbsolute

Ordering number:ENN6222NPN Epitaxial Planar Silicon Transistor2SC5503VHF to UHF Low-Noise Wide-BandAmplifier ApplicationsFeatures Package Dimensions Low noise : NF=1.2dB typ (f=1GHz).unit:mm2 High gain : S21e =15dB typ (f=1GHz).2161 High cutoff frequency : fT=9.0GHz typ.[2SC5503]0.65 0.650.150.34 30 to 0.11 20.60.65 0.52.01 : Emitter

Ordering number : ENN69872SA2062 / 2SC5774PNP Epitaxial Planar Silicon TransistorNPN Triple Diffused Planar Silicon Transistor2SA2062 / 2SC5774140V / 10A, AF 70W Output ApplicationsFeatures Package Dimensions Large current capacitance. unit : mm Wide ASO and high durability against breakdown. 2022A Adoption of MBIT process.[2SA2062 / 2SC5774]15.63.24.814.0

Ordering number : ENN69942SC5792NPN Triple Diffused Planar Silicon Transistor2SC5792Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeaturesPackage Dimensions High speed.unit : mm High breakdown voltage(VCBO=1600V).2174A High reliability(Adoption of HVP process).[2SC5792] Adoption of MBIT process.5.63.416.03.12.82.0 2.

Ordering number:ENN6309APNP/NPN Epitaxial Planar Silicon Transistors2SA2016/2SC5569DC/DC Converter ApplicationsApplications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit:mm2163Features [2SA2016/2SC5569]4.5 Adoption of FBET and MBIT processes.1.6 1.5 High current capacitance. Low collector-to-emitter saturation voltage. High

Ordering number:ENN6305PNP/NPN Epitaxial Planar Silicon Transistors2SA2011/2SC5564DC/DC Converter ApplicationsApplications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit:mm2038AFeatures [2SA2011/2SC5564]4.5 Adoption of MBIT processes.1.51.6 Large current capacitance. Low collector-to-emitter saturation voltage. High-speed

Ordering number : ENN66062SC5646NPN Epitaxial Planar Silicon Transistor2SC5646UHF to S Band Low-Noise Amplifierand OSC ApplicationsFeatures Package Dimensions Low-noise use : NF=1.5dB typ (f=2GHz). unit : mm High cut-off frequency : fT=10GHz typ (VCE=1V). 2159: fT=12.5GHz typ (VCE=3V).[2SC5646] Low operating voltage. High gain :S21e2=9.5dB typ (f=2GHz).

Ordering number:ENN6297NPN Triple Diffused Planar Silicon Transistor2SC5578Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed.unit:mm High breakdown voltage (VCBO=1600V).2048B High reliability (Adoption of HVP process).[2SC5578] Adoption of MBIT process.20.0 3.35.02.03.40.61.21 : Base

Ordering number:EN4473NPN Epitaxial Planar Silicon Transistor2SC5070Low-Frequency General-Purpose Amplifier,Driver ApplicationsFeatures Package Dimensions High current capacity.unit:mm Adoption of MBIT process.2084A High DC current gain.[2SC5070] Low collector-to-emitter saturation voltage.4.51.9 2.610.5 High VEBO.1.2 1.41.20.51.60.51 2

Ordering number:EN5956NPN Triple Diffused Planar Silicon Transistor2SC5451Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed.unit:mm High breakdown voltage (VCBO=1600V).2039D High reliability (Adoption of HVP process).[2SC5451] Adoption of MBIT process.16.05.63.43.12.82.0 2.01.00.6

Ordering number : ENN6663B2SC5696NPN Triple Diffused Planar Silicon Transistor2SC5696Color TV Horizontal DeflectionOutput ApplicationsFeaturesPackage Dimensions High speed.unit : mm High breakdown voltage(VCBO=1600V).2174A High reliability(Adoption of HVP process).[2SC5696] Adoption of MBIT process.5.63.416.0 On-chip damper diode.3.12.82.

Ordering number:EN4782ANPN Triple Diffused Planar Silicon Transistor2SC5044Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High reliability (HVP process).2039D High breakdown voltage (VCBO=1600V).[2SC5044] Adoption of MBIT process.16.05.63.43.12.82.0 2.01.00

Ordering number:ENN6467NPN Triple Diffused Planar Silicon Transistor2SC5639Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2174 High reliability (Adoption of HVP process).[2SC5639] Adoption of MBIT process.3.4 5.616.03.12.82.0 2

Ordering number : ENN72612SC5831NPN Epitaxial Planar Silicon Transistor2SC5831Driver ApplicationsPreliminaryApplications Package Dimensions Suitable for use in switching of inductive load unit : mm (motor drivers, printer hammer drivers, relay drivers). 2042B[2SC5831]8.04.0Features3.31.0 1.0 High DC current gain. Wide ASO. On-chip zener diode of 65

Ordering number:ENN6290NPN Epitaxial Planar Silicon Transistor2SC5536VHF Low-Noise Amplifier , OSC ApplicationsFeatures Package Dimensions Low noise : NF=1.8dB typ (f=150MHz).unit:mm2 High gain : S21e =16dB typ (f=150MHz).2159 Ultrasmall, slim flat-lead package.[2SC5536](1.4mm 0.8mm 0.6mm)1.40.10.2531 20.450.21 : Base2 : Emitter3 :

Ordering number:ENN6307APNP/NPN Epitaxial Planar Silicon Transistors2SA2013/2SC5566DC/DC Converter ApplicationsApplications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit:mm2038AFeatures [2SA2013/2SC5566]4.5 Adoption of FBET and MBIT processes.1.51.6 High current capacitance. Low collector-to-emitter saturation voltage. Hi

Ordering number : ENN6989A2SC5763NPN Triple Diffused Planar Silicon Transistor2SC5763Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage. unit : mm High reliability. 2010C High-speed switching.[2SC5763] Wide ASO.10.24.5 Adoption of MBIT process. 3.65.11.31.20.80.41 : Base2 : Collector1 2 33 : EmitterSANY

Ordering number : ENN6608A2SC5682NPN Triple Diffused Planar Silicon Transistor2SC5682Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process).[2SC5682] Adoption of MBIT process.5.63.416.03.12.82.0 2.1

Ordering number : ENA1091 2SC5490ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorUHF to S-Band Low-Noise Amplifier2SC5490AApplicationsFeatures Low-noise : NF=0.9dB typ (f=1GHz).: NF=1.4dB typ (f=1.5GHz). Low-voltage, low-current operation (VCE=1V, IC=1mA).: fT=3.5GHz typ.: S21e2=5.5dB typ (f=1.5GHz). High gain : S21e2=10dB typ

Ordering number : ENA1118 2SC5551ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorHigh-Frequency Medium-Output2SC5551AAmplifier ApplicationsFeatures High fT : (fT=3.5GHz typ). Large current : (IC=300mA). Large allowable collector dissipation (1.3W max).SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings Un

Ordering number : ENN69902SC5776NPN Triple Diffused Planar Silicon Transistor2SC5776Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeaturesPackage Dimensions High speed.unit : mm High breakdown voltage (VCBO=1600V).2174A High reliability (Adoption of HVP process).[2SC5776] Adoption of MBIT process.5.63.416.0 On-chip da

Ordering number:EN5187NPN Epitaxial Planar Silicon Transistor2SC5277UHF to S Band Low-Noise Amplifier,OSC ApplicationsFeatures Package Dimensions Low noise : NF=0.9dB typ (f=1GHz).unit:mm: NF=1.4dB typ (f=1.5GHz).2106A2 High gain : S21e =10dB typ (f=1.5GHz).[2SC5277] High cutoff frequency : fT=11GHz typ.0.750.30.6 Low-voltage, low-current ope

Ordering number : ENN69932SC5791NPN Triple Diffused Planar Silicon Transistor2SC5791Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeaturesPackage Dimensions High speed.unit : mm High breakdown voltage(VCBO=1600V).2174A High reliability(Adoption of HVP process).[2SC5791] Adoption of MBIT process.5.63.416.03.12.82.0 2.

Ordering number:ENN6221NPN Epitaxial Planar Silicon Transistor2SC5501VHF to UHF Low-Noise Wide-BandAmplifier ApplicationsFeatures Package Dimensions Low noise : NF=1.0dB typ (f=1GHz).unit:mm2 High gain : S21e =13dB typ (f=1GHz).2161 High cutoff frequency : fT=7GHz typ.[2SC5501] Large allowable collector dissipation :PC=500mW max.0.65 0.650.15

Ordering number : EN5696NPN Triple Diffused Planar Silicon Transistor2SC5416Inverter Lighting ApplicationsFeaturesPackage Dimensions High breakdown voltage.unit: mm High reliability (Adoption of HVP process).2079B-TO220FI (LS) Adoption of MBIT process.[2SC5416]4.510.02.83.20.90.71.20.751 : Base1 2 32 : Collector3 : EmitterSANYO : TO220FI

Ordering number:EN4781NPN Triple Diffused Planar Silicon Transistor2SC5043Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High reliability (HVP process).2039D High breakdown voltage (VCBO=1600V).[2SC5043] Adoption of MBIT process.16.05.63.4 On-chip damper diode.

Ordering number:EN5416ANPN Triple Diffused Planar Silicon Transistor2SC5300Ultrahigh-Definition Color DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2039D High reliability (Adoption of HVP process).[2SC5300] Adoption of MBIT process.16.05.63.43.12.82

Ordering number : EN5817NPN Triple Diffused Planar Silicon Transistor2SC5417Inverter Lighting ApplicationsFeaturesPackage Dimensions High breakdown voltage.unit: mm High reliability (Adoption of HVP process).2079B-TO220FI (LS) Adoption of MBIT process.[2SC5417]4.510.02.83.20.90.71.20.751 : Base1 2 32 : Collector3 : EmitterSANYO : TO220FI

Ordering number : ENN5282A2SC5291NPN Epitaxial Planar Silicon Transistor2SC5291High-Voltage Switching ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT processes. unit : mm Large current capacity. 2084B Can be provided in taping.[2SC5291] 9.5mm onboard mounting height.4.51.9 2.610.51.2 1.41.20.51.60.51 2 31 : Emitter2 : Collecto

Ordering number:ENN6321PNP/NPN Epitaxial Planar Silicon Transistors2SA2014/2SC5567DC/DC Converter ApplicationsApplications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit:mm2163Features [2SA2014/2SC5567]4.5 Adoption of MBIT processes.1.6 1.5 Large current capacitance. Low collector-to-emitter saturation voltage. High-speed sw

Ordering number:EN5034NPN Epitaxial Planar Silicon Transistor2SC5227VHF to UHF Wide-Band Low-NoiseAmplifier ApplicationsFeatures Package Dimensions Low noise : NF=1.0dB typ (f=1GHz).unit:mm2 High gain : S21e =12dB typ (f=1GHz).2018B High cutoff frequency : fT=7GHz typ.[2SC5227]0.40.1630 to 0.11 0.95 20.951.92.91 : Base2 : Emitter3 :

Ordering number:ENN6324PNP/NPN Epitaxial Planar Silicon Transistors2SA608N/2SC536NLow-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions Capable of being used in the low frequency to highunit:mmfrequency range.2164[2SA608N/2SC536N]4.5Features3.7 3.5 Large current capacity and wide ASO.0.450.51.270.45 0.441 2 31 : Emitter

Ordering number:EN5032ANPN Epitaxial Planar Silicon Transistor2SC5226VHF to UHF Wide-Band Low-NoiseAmplifier ApplicationsFeatures Package Dimensions Low noise : NF=1.0dB typ (f=1GHz).unit:mm2 High gain : S21e =12dB typ (f=1GHz).2059B High cutoff frequency : fT=7GHz typ.[2SC5226]0.30.1530 to 0.11 20.3 0.60.65 0.650.92.01 : Base2 : Emi

Ordering number : ENN6664A2SC5698NPN Triple Diffused Planar Silicon Transistor2SC5698CRT Display Horizontal DeflectionOutput ApplicationsFeatures Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process).[2SC5698] Adoption of MBIT process.5.63.416.0 On-chip damper diode. 3.12.82.0

Ordering number : ENN6652A2SC5680NPN Triple Diffused Planar Silicon Transistor2SC5680Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeaturesPackage Dimensions High speed.unit : mm High breakdown voltage(VCBO=1500V).2174A High reliability(Adoption of HVP process).[2SC5680] Adoption of MBIT process.5.63.416.03.12.82.0 2

Ordering number:ENN6258NPN Epitaxial Planar Silicon Transistor2SC5534UHF to S Band Low-Noise Amplifier,OSC ApplicationsFeatures Package Dimensions Low noise : NF=1.2dB typ (f=2GHz).unit:mm2 High gain : S21e =10dB typ (f=2GHz).2161 High cutoff frequency : fT=13GHz typ.[2SC5534]0.65 0.650.150.34 30 to 0.11 20.60.65 0.52.01 : Emitter2 :

Ordering number : ENN65872SA2037 / 2SC5694PNP / NPN Epitaxial Planar Silicon Transistors2SA2037 / 2SC5694DC / DC Converter ApplicationsApplicationsPackage Dimensions Relay drivers, lamp drivers, motor drivers andunit : mmprinter drivers.2042B8.0[2SA2037 / 2SC5694]4.03.31.0 1.0Features Adoption of MBIT process. Large current capacity.3.0 Low co

Ordering number : ENA1063 2SC5227ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorVHF to UHF Wide-Band Low-Noise2SC5227AAmplifier ApplicationsFeatures Low-noise : NF=1.0dB typ (f=1GHz). High gain : S21e2=12dB typ (f=1GHz). High cut-off frequency : fT=7GHz typ.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditio

Ordering number : ENN5321A2SC5265LSNPN Triple Diffused Planar Silicon Transistor2SC5265LSInverter-Controlled Lighting ApplicationsFeaturesPackage Dimensions High breakdown voltage(VCBO=1200V).unit : mm High reliability(Adoption of HVP process).2079D Adoption of MBIT process.[2SC5265LS]10.0 4.53.22.80.91.2 1.20.75 0.71 2 31 : Base2 : Collector

Ordering number:ENN5910NPN Epitaxial Planar Silicon Transistor2SC5414High-FrequencyLow-Noise Amplifier ApplicationsFeatures Package Dimensions2 High gain : S21e =9.5dB typ (f=1GHz).unit:mm High cutoff frequency : fT=6.7GHz typ.2004B[2SC5414]5.04.04.00.450.50.440.451 : Base1 2 32 : Emitter3 : Collector1.3 1.3SANYO : NPSpecifications

Ordering number:EN5363BNPN Triple Diffused Planar Silicon Transistor2SC5302Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions Fast speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2039D High reliability (adoption of HVP process).[2SC5302] Adoption of MBIT process.16.05.63.43.12.82.0

Ordering number:EN5292NPN Triple Diffused Planar Silicon Transistor2SC5298Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed : tf=100ns typ.unit:mm High breakdown voltage : VCBO=1500V.2039D High reliability (Adoption of HVP process).[2SC5298] Adoption of MBIT process.16.05.63.4 On-chip da

Ordering number : ENN6607A2SC5681NPN Triple Diffused Planar Silicon Transistor2SC5681Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process).[2SC5681] Adoption of MBIT process.5.63.416.03.12.82.0 2.1

Ordering number:ENN6339NPN Epitaxial Planar Silicon Transistor2SC5489VHF to UHF Low-Noise Wide-BandAmplifier ApplicationsFeatures Package Dimensions Low noise : NF=1.2dB typ (f=1GHz).unit:mm2 High gain : S21e =13dB typ (f=1GHz).2159 High cutoff frequency : fT=9.0GHz typ.[2SC5489] Ultrasmall, slim flat-lead package.(1.4mm 0.8mm 0.6mm)1.40.

Ordering number : ENN6912B2SA2039 / 2SC5706PNP / NPN Epitaxial Planar Silicon Transistors2SA2039 / 2SC5706High Current Switching ApplicationsApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash.Features Adoption of FBET and MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switchin

Ordering number : ENN69122SA2039 / 2SC5706PNP / NPN Epitaxial Planar Silicon Transistors2SA2039 / 2SC5706High Current Switching ApplicationsFeatures Package Dimensions DC-DC converter, relay drivers, lamp drivers, unit : mmmotor drivers, strobes. 2045BFeatures[2SA2039 / 2SC5706] Adoption of FBET, MBIT process.6.52.35.0 Large current capacitance.0.54

Ordering number:ENN5613PNP/NPN Epitaxial Planar Silicon Transistors2SA1973/2SC5310DC/DC Converter ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT processes.unit:mm Large current capacitance.2018B Low collector-to-emitter saturation voltage.[2SA1973/2SC5310] High-speed switching.0.4 Ultrasmall package facilitates miniaturization in end 0.16

Ordering number : ENA1062 2SC5226ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorVHF to UHF Wide-Band Low-Noise2SC5226AAmplifier ApplicationsFeatures Low-noise : NF=1.0dB typ (f=1GHz). High gain : S21e2=12dB typ (f=1GHz). High cut-off frequency : fT=7GHz typ.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditio

Ordering number:EN6102NPN Triple Diffused Planar Silicon Transistor2SC5444Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2048B High reliability (Adoption of HVP process).[2SC5444] Adoption of MBIT process.20.03.35.02.03.40.6

Ordering number:ENN5884ANPN Triple Diffused Planar Silicon Transistor2SC5305LSInverter Lighting ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO=1200V).unit:mm High reliability (Adoption of HVP process).2079D Adoption of MBIT process.[2SC5305]10.0 4.53.22.80.91.2 1.20.75 0.71:Base1 2 32:Collector3:EmitterSpecifications2.55

Ordering number : ENN79882SA2125 / 2SC5964PNP / NPN Epitaxial Planar Silicon Transistors2SA2125 / 2SC5964DC / DC Converter ApplicationsApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash.Features Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.Specifications

Ordering number:EN4509NPN Epitaxial Planar Silicon Transistor2SC5069Low-Frequency General-Purpose Amplifier,Driver ApplicationsFeatures Package Dimensions High current capacity.unit:mm Adoption of MBIT process.2038A High DC current gain.[2SC5069] Low collector-to-emitter saturation voltage.4.5 High VEBO.1.51.60.4 0.53 2 10.41.53.01 : Ba

Ordering number:EN4785ANPN Triple Diffused Planar Silicon Transistor2SC5047Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High reliability (Adoption of HVP process).2048B High breakdown voltage (VCBO=1600V).[2SC5047] Adoption of MBIT process.20.03.35.02.03.40.6

Ordering number:ENN6279NPN Epitaxial Planar Silicon Transistor2SC5502High-Frequency Low-NoiseAmplifier ApplicationsFeatures Package Dimensions Low noise : NF=1.1dB typ (f=1GHz).unit:mm2 High gain : S21e =12dB typ (f=1GHz).2161 High cutoff frequency : fT=8GHz typ.[2SC5502]0.65 0.650.150.34 30 to 0.11 20.60.65 0.52.01 : Emitter2 : Coll

Ordering number:EN5884NPN Triple Diffused Planar Silicon Transistor2SC5305Inverter Lighting ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO=1200V).unit:mm High reliability (Adoption of HVP process).2079B Adoption of MBIT process.[2SC5305]4.510.02.83.20.90.71.20.751:Base1 2 32:Collector3:Emitter2.55 2.55SANYO:TO-220FI

Ordering number:ENN6336PNP/NPN Epitaxial Planar Silicon Transistors2SA2023/2SC561160V / 5A High-Speed Switching ApplicationsApplications Package Dimensions Various inductance lamp drivers for electricalunit:mmequipment.2165 Inverters, converters (strobes, flash, fluorescent lamp[2SA2023/2SC5611]lighting circuit).8.04.0 Power amplifier (high-power car stereo,

Ordering number:ENN5290ANPN Triple Diffused Planar Silicon Transistor2SC5296Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed : tf=100ns typ.unit:mm High breakdown voltage : VCBO=1500V.2039D High reliability (Adoption of HVP process).[2SC5296] Adoption of MBIT process.16.05.63.4 On-chip

Ordering number:ENN5911NPN Epitaxial Planar Silicon Transistor2SC5415High-FrequencyLow-Noise Amplifier ApplicationsFeatures Package Dimensions2 High gain : S21e =9dB typ (f=1GHz).unit:mm High cutoff frequency : fT=6.7GHz typ.2038A[2SC5415]4.51.51.60.4 0.53 2 10.41.53.01 : Base0.752 : Collector3 : EmitterSANYO : PCPSpecifications(B

Ordering number:ENN5696ANPN Triple Diffused Planar Silicon Transistor2SC5416LSInverter Lighting ApplicationsFeatures Package Dimensions High breakdown voltage.unit:mm High reliability (Adoption of HVP process).2079D Adoption of MBIT process.[2SC5416]10.0 4.53.22.80.91.2 1.20.75 0.71:Base1 2 32:Collector3:EmitterSpecifications2.55 2.55SANYO:

Ordering number : ENN6307B2SA2013 / 2SC5566PNP / NPN Epitaxial Planar Silicon Transistors2SA2013 / 2SC5566DC / DC Converter ApplicationsApplications Relay drivers, lamp drivers, motor drivers, flash.Features Adoption of FBET and MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall packag

Ordering number:ENN6308PNP/NPN Epitaxial Planar Silicon Transistors2SA2015/2SC5568DC/DC Converter ApplicationsApplications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit:mm2163Features [2SA2015/2SC5568]4.5 Adoption of MBIT processes.1.6 1.5 Large current capacitance. Low collector-to-emitter saturation voltage. High-speed sw

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

2SC5624Silicon NPN EpitaxialHigh Frequency Low Noise AmplifierREJ03G0129-0200Z(Previous ADE-208-978(Z))Rev.2.00Oct.21.2003Features High gain bandwidth productfT = 28 GHz typ. High power gain and low noise figure ;PG = 18 dB typ. , NF = 1.2 dB typ. at f = 1.8 GHzOutlineCMPAK-42314 1. Emitter2. Collector3. Emitter4. BaseNote: Marking is VH-.

2SC5945 Si NPN Epitaxial High Frequency Medium Power Amplifier REJ03G0443-0300 Rev.3.00 Aug 03, 2006 Features Excellent Linearity P1dB at output = +26 dBm typ. f = 2.4 GHz High Collector to Emitter Voltage VCEO = 5 V Ideal for 2 GHz Band applications. e.g 2.4 GHz WLAN, Digital cordless phone. 7 Pin, Lead less, Small mounting area (HWSON-6: 2.0 x 2.0 x 0.8

2SC5998Silicon NPN EpitaxialHigh Frequency Medium Power AmplifierREJ03G0169-0100ZRev.1.00Apr.20.2004Features High Transition FrequencyfT = 11 GHz typ. High gain and Excellent EfficiencyMaximum Available Gain (MAG) = +22 dB typ. at VCE = 3.6 V, IC= 100 mA, f = 500 MHzPower Added Efficiency (PAE) = 70% typ. at Pin=+16 dBm, f = 500 MHz High Collector to Emitter Vol

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

Preliminary Datasheet RJK03C5DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1921-0200Power Switching Rev.2.00Apr 27, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.4 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENES

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

December 2004FDC561260V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 4.3 A, 60 V. RDS(ON) = 0.055 @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DC RDS(ON) = 0.064 @ VGS = 6 Vconverters using either synchronous or conventionalswitching PWM controllers. Low gate charge (12.5nC typical).Thes

BC556/557/558/559/560Switching and Amplifier High Voltage: BC556, VCEO= -65V Low Noise: BC559, BC560 Complement to BC546 ... BC 550TO-9211. Collector 2. Base 3. EmitterPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage : BC556 -80 V: BC557/560 -50 V: BC558/559 -30 V

May 2015FDPC5030SGPowerTrench Power Clip 30V Asymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to Max rDS(on) = 5.0 m at VGS = 10 V, ID = 17 Aenable easy placement and routing of synchronous buck Max rDS(on) = 6.5 m at VGS = 4

February 2002 FDC5614P 60V P-Channel Logic Level PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchilds high 3 A, 60 V. RDS(ON) = 0.105 @ VGS = 10 V voltage PowerTrench process. It has been optimized for RDS(ON) = 0.135 @ VGS = 4.5 V power management applications. Fast switching speed Applic

KSC5024High Voltage and High Reliabilty High Speed Switching Wide SOATO-3P11.Base 2.Collector 3.EmitterNPN Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 VVEBO Emitter- Base Voltage 7 VIC Collector Current (DC) 10 AICP Collector Current (

May 2010KSC5338D/KSC5338DWNPN Triple Diffused Planar Silicon TransistorFeatures High Voltage Power Switch Switching Application Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time Two Package Choices : TO-220 or D2-PAKEquivalent CircuitD2-PAKC1BTO-220E11.Base 2.Coll

September 2010FDMC5614PtmP-Channel PowerTrench MOSFET -60V, -13.5A, 100mFeatures General Description Max rDS(on) = 100m at VGS = -10V, ID = -5.7AThis P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been Max rDS(on) = 135m at VGS = -4.5V, ID = -4.4Aoptimized for power management applications requiring a wi

May 2015FDPC5018SGPowerTrench Power Clip 30V Asymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to Max rDS(on) = 5.0 m at VGS = 10 V, ID = 17 Aenable easy placement and routing of synchronous buck Max rDS(on) = 6.5 m at VGS = 4

KSC5086HIgh Definition Color Display Horizontal Equivalent CircuitDeflection Output C(Damper Diode Built In) High Collector-Base Voltage : BVCBO=1500V High Speed Switching : tF=0.1s (Typ.)BTO-3PF150 typ. 1.Base 2.Collector 3.EmitterENPN Triple Diffused Planar Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value

January 20092SC5200/FJL4315NPN Epitaxial Silicon TransistorApplications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability: IC = 17A.TO-2641 High Power Dissipation : 150watts. High Frequency : 30MHz. 1.Base 2.Collector 3.Emitter High Voltage : VCEO=250V Wide S.O.A for reliable operation. Excel

October 2008KSC5021NPN Silicon Transistor High Voltage and High Reliability High Speed Switching : tF = 0.1ms (Typ.) Wide SOATO-22011.Base 2.Collector 3.EmitterAbsolute Maximum Ratings TC = 25C unless otherwise notedSymbol Parameter Value Units 800 VVCBO Collector-Base Voltage 500 VVCEO Collector-Emitter Voltage 7 VVEBO Emitter-Base Voltage 5 AIC C

KSC5802DHigh Voltage Color Display Horizontal Equivalent CircuitDeflection Output C(Built In Damper Diode) High Breakdown Voltage BVCBO=1500V High Speed Switching : tF=0.1s (Typ.)B Wide S.O.ATO-3PF1 For C-Monitor(69KHz)50 typ. 1.Base 2.Collector 3.EmitterENPN Triple Diffused Planar Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherw

KSC5030FHigh Voltage Fast Switching TransistorFeatures Fast Speed Switching Wide Safe Operating AreaTO-3PF11.Base 2.Collector 3.EmitterAbsolute Maximum RatingsSymbol Parameter Value UnitsVCBO Collector-Base Voltage 1100 VVCEO Collector-Emitter Voltage 800 VVEBO Emitter-Base Voltage 7 VIC Collector Current (DC) 6 AICP * Collector Current (Pulse) 20 APC Collect

FJAF6810AHigh Voltage Color Display Horizontal Deflection Output High Collector-Base Breakdown Voltage : BVCBO = 1550V High Switching Speed : tF(typ.) =0.1s For Color MonitorTO-3PF11.Base 2.Collector 3.EmitterNPN Triple Diffused Planar Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Rating UnitsVCBO Collector-Base Vo

KSC5042FHigh Voltage Switchihg Dynamic Focus Application High Collector-Emitter Breakdown Voltage : BVCEO=900V Small Cob =2.8pF (Typ.) Wide S.O.A High reliabilityTO-220F11.Base 2.Collector 3.EmitterNPN Triple Diffused Planar Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 150

December 2004FDC561260V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 4.3 A, 60 V. RDS(ON) = 0.055 @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DC RDS(ON) = 0.064 @ VGS = 6 Vconverters using either synchronous or conventionalswitching PWM controllers. Low gate charge (12.5nC typical).Thes

KSC5386High Voltage Color Display Horizontal Equivalent CircuitCDeflection Output (Damper Diode Built In) High Collector-Base Breakdown Voltage : BVCBO=1500VBTO-3PF High Speed Switching : tF=0.1s (Typ)1 Wide S.O.A50 typ. 1.Base 2.Collector 3.Emitter For C-Monitor (48KHz)ENPN Triple Diffused Planar Silicon TransistorAbsolute Maximum Ratings unless

KSC5039High Voltage Power Switch Switching ApplicationTO-22011.Base 2.Collector 3.EmitterNPN Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 5 A ICP Collector Current (Pulse) 10 AIB Base

BC516PNP Darlington Transistor This device is designed for applications reguiring extremely high current gain at currents to 1mA. Sourced from process 61.TO-9211. Collector 2. Base 3. EmitterAbsolute Maximum Ratings TA=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 30 VVCBO Collector-Base Voltage 40 VVEBO Emitter-Base Voltage

January 2005BC517NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0A. Sourced from process 05.TO-9211. Collector 2. Base 3. EmitterAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 30 VVCBO Collector-Base Voltage 40 VVEBO Emi

January 2011KSC5026MNPN Silicon TransistorFeatures High Voltage and High Reliability High Speed Switching Wide SOATO-12611. Emitter 2.Collector 3.BaseAbsolute Maximum Ratings TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 1100 VVCEO Collector-Emitter Voltage 800 VVEBO Emitter-Base Voltage 7 VIC Collector Current (D

BC546/547/548/549/550Switching and Applications High Voltage: BC546, VCEO=65V Low Noise: BC549, BC550 Complement to BC556 ... BC560TO-9211. Collector 2. Base 3. EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage : BC546 80 V: BC547/550 50 V: BC548/549 30 VVCE

December 2009KSC5402D/KSC5402DTNPN Silicon Transistor, Planar Silicon TransistorFeaturesD-PAK High Voltage High Speed Power Switch ApplicationEquivalent Circuit Wide Safe Operating Area C1 Built-in Free Wheeling DiodeTO-220 Suitable for Electronic Ballast ApplicationB Small Variance in Storage Time Two Package Choices; D-PAK or TO-2201E1.Base

February 2010KSC5603D NPN Silicon Transistor, Planar Silicon TransistorFeaturesEquivalent CircuitC High Voltage High Speed Power Switch Application Wide Safe Operating Area Built-in Free Wheeling DiodeB Suitable for Electronic Ballast ApplicationTO-2201 Small Variance in Storage Time 1.Base 2.Collector 3.EmitterEAbsolute Maximum Ratings TA = 25C

October 2008FDC5661N_F085tmN-Channel Logic Level PowerTrench MOSFET60V, 4A, 60m ApplicationsFeatures RDS(on) = 47m at VGS = 10V, ID = 4.3A DC/DC converter RDS(on) = 60m at VGS = 4.5V, ID = 4A Motor Drives Typ Qg(TOT) = 14.5nC at VGS = 10V Low Miller Charge Qualified to AEC Q101 RoHS Compliant 2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

January 20092SC5242/FJA4313NPN Epitaxial Silicon TransistorApplications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability: IC = 17ATO-3P1 High Power Dissipation : 130watts1.Base 2.Collector 3.Emitter High Frequency : 30MHz. High Voltage : VCEO=250V Wide S.O.A for reliable operation. Excelle

Discrete POWER & SignalTechnologiesBC548BC548ABC548BBC548CE TO-92BCNPN General Purpose AmplifierThis device is designed for use as general purpose amplifiersand switches requiring collector currents to 300 mA. Sourced fromProcess 10. See PN100A for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-

KSC5502D/KSC5502DTD-PAKEquivalent CircuitHigh Voltage Power Switch Switching CApplication1 Wide Safe Operating Area TO-220 Built-in Free-Wheeling Diode B Suitable for Electronic Ballast Application Small Variance in Storage Time Two Package Choices : D-PAK or TO-220E11.Base 2.Collector 3.EmitterNPN Triple Diffused Planar Silicon TransistorAbsol

Discrete POWER & SignalTechnologiesBC547BC547ABC547BBC547CE TO-92BCNPN General Purpose AmplifierThis device is designed for use as general purpose amplifiersand switches requiring collector currents to 300 mA. Sourced fromProcess 10. See PN100A for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-

May 2010KSC5305DNPN Silicon TransistorFeatures High Voltage High Speed Power Switch Application Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications No need to interest an hFE value because of low variable storage-time spread even though corner spirit product Low base drive requirement Equival

KSC5019Low Saturation VCE(sat)=0.5V at IC=2A, IB=50mATO-9211. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 30 VVCES Collector-Emitter Voltage 30 VVCEO Collector-Emitter Voltage 10 VVEBO Emitter-Base Voltage 6 VIC Collector Current (DC) 2 A

KSC5039FHigh Voltage Power Switch Switching ApplicationTO-220F11.Base 2.Collector 3.EmitterNPN Planar Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 800 V V CEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 5 A ICP Collector Current (Pulse) 10 A

KSC5027High Voltage and High Reliability High Speed Switching Wide SOATO-22011.Base 2.Collector 3.EmitterNPN Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 3 A ICP Collector Curre

April 2008KSC5502NPN Planar Silicon TransistorHigh Voltage Power Switch Mode Application Small Variance in Storage TimeEquivalent Circuit Wide Safe Operating AreaC Suitable for Electronic Ballast Application B1 TO-220E1.Base 2.Collector 3.EmitterAbsolute Maximum Ratings * TC=25C unless otherwise notedSymbol Parameter Value UnitsBVCBO Collector-Base Vol

June 2010FDMC510PP-Channel PowerTrench MOSFET -20 V, -18 A, 8.0 mFeatures General Description Max rDS(on) = 8.0 m at VGS = -4.5 V, ID = -12 AThis P-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 9.8 m at VGS = -2.5 V, ID = -10 Abeen optimized for rDS(ON), switching performance and Max rDS(on) =

DATA SHEETNPN SILICON RF TRANSISTOR2SC5436NPN EPITAXIAL SILICON TRANSISTORFOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATIONFLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLDFEATURES Contains same chip as 2SC5186 Flat-lead 3-pin thin-type ultra super minimold packageORDERING INFORMATIONPart Number Quantity Supplying Form2SC5436 50 pcs (Non reel) 8 mm wide embossed taping2S

NEC's NPN SILICON HIGH NE856FREQUENCY TRANSISTOR SERIESFEATURES HIGH GAIN BANDWIDTH PRODUCT:fT = 7 GHz LOW NOISE FIGURE:1.1 dB at 1 GHz HIGH COLLECTOR CURRENT: 100 mA HIGH RELIABILITY METALLIZATION35 (MICRO-X)00 (CHIP) LOW COSTDESCRIPTIONNEC's NE856 series of NPN epitaxial silicon transistors isdesigned for low cost amplifier and oscillator application

DATA SHEETSILICON TRANSISTOR2SC5008NPN SILICON EPITAXIAL TRANSISTOR3 PINS ULTRA SUPER MINI MOLDDESCRIPTIONPACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for usein millimetersin low noise and small signal amplifiers from VHF band to L band. Low1.6 0.1noise figure, high gain, and high current capability achieve a very wide0.8 0.1dyna

DATA SHEETSILICON TRANSISTOR2SC5004NPN SILICON EPITAXIAL TRANSISTOR3 PINS ULTRA SUPER MINI MOLDDESCRIPTIONPACKAGE DIMENSIONSThe 2SC5004 is a low supply voltage transistor designed for UHFin millimetersOSC/MIX.It is suitable for a high density surface mount assembly since the1.6 0.10.8 0.1transistor has been applied ultra super mini mold package.2FEATURES

DATA SHEETSILICON TRANSISTOR2SC5013HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTOR4 PINS SUPER MINI MOLDFEATURES Small Package PACKAGE DIMENSIONS High Gain Bandwidth Product (fT = 10 GHz TYP.) in millimeters Low Noise, High Gain2.1 0.2 Low Voltage Operation 1.25 0.1 0.3 +0.1 0.05 (LEADS 2, 3, 4) ORDERING INFORMATION2 3 P

DATA SHEETNPN SILICON RF TRANSISTOR2SC5618NPN SILICON RF TRANSISTOR FORHIGH-FREQUENCY LOW NOISE3-PIN LEAD-LESS MINIMOLDFEATURES NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz NF = 1.4 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz 3-pin lead-less minimold packageORDERING INFORMATIONPart Number Quantity Supplying Form2SC5618 50 pcs (Non reel) 8 mm wide embosse

DATA SHEETSILICON TRANSISTOR2SC5184NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLDPACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATIONFEATURESPACKAGE DIMENSIONS Low Noise(Units: mm) NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz2.1 0.1 Super Mini-Mold package1.25 0.1 EIAJ: SC-70ORDERING INFORMAT

DATA SHEETNPN SILICON RF TRANSISTOR2SC5617NPN SILICON RF TRANSISTOR FORHIGH-FREQUENCY LOW NOISE3-PIN LEAD-LESS MINIMOLDFEATURES NF = 1.5 dB TYP. @ VCE = 3 V, IC = 3 mA, f = 2 GHz S21e2 = 11.0 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz 3-pin lead-less minimold packageORDERING INFORMATIONPart Number Quantity Supplying Form2SC5617 50 pcs (Non reel) 8 mm w

DATA SHEETNPN SILICON RF TRANSISTOR2SC5508NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES Ideal for low-noise, high-gain amplification applications NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz Maximum available power gain: MAG = 19 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2

DATA SHEETNPN SILICON GERMANIUM RF TRANSISTOR2SC5843NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE) FEATURES Ideal for low noise, high-gain amplification NF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz Maximum stable power gain: MSG = 20.0 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz SiGe technology (fT

DATA SHEETNPN SILICON RF TRANSISTOR2SC5186NPN EPITAXIAL SILICON RF TRANSISTORFOR LOW-NOISE MICROWAVE AMPLIFICATION3-PIN ULTRA SUPER MINIMOLDFEATURES Low noiseNF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHzNF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz 3-pin ultra super minimold packageORDERING INFORMATIONPart Number Quantity Supplying Form2SC5186 50 pcs (N

DATA SHEETSILICON TRANSISTOR2SC5177NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGEFOR LOW-NOISE MICROWAVE AMPLIFICATIONFEATURES Low Current Consumption and High GainPACKAGE DIMENSIONS|S21e|2 = 9.0 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz (Units: mm)|S21e|2 = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz2.80.2 Mini-Mold package1.50.65+0.1 0.15EIAJ:

DATA SHEETNPN SILICON RF TRANSISTOR2SC5751NPN SILICON RF TRANSISTOR FORMEDIUM OUTPUT POWER AMPLIFICATION (30 mW)FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLDFEATURES Ideal for medium output power amplification PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm HFT3 technology (fT = 12 GHz) adopted High reliability through use of gold electrodes Fla

DATA SHEETNPN SILICON RF TRANSISTOR2SC5338NPN SILICON RF TRANSISTOR FORHIGH-FREQUENCY LOW DISTORTION AMPLIFIER4-PIN POWER MINIMOLDFEATURES High gain: S21e2 = 10 dB TYP. @ VCE = 5 V, IC = 50 mA, f = 1 GHz Low distortion, low voltage: IM2 = -55 dB TYP., IM3 = -76 dB TYP. @ VCE = 5 V, IC = 50 mA, Vin = 105 dBV/75 4-pin power minimold package with improved gain

DATA SHEETNPN SILICON RF TRANSISTOR2SC5431NPN EPITAXIAL SILICON TRANSISTORFOR UHF TUNER OSC/MIXFLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLDFEATURES Contains same chip as 2SC5004 Flat-lead 3-pin thin-type ultra super minimold packageORDERING INFORMATIONPart Number Quantity Supplying Form2SC5431 50 pcs (Non reel) 8 mm wide embossed taping2SC5431-T1 3 kpcs/reel

PRELIMINARY DATA SHEETSILICON TRANSISTOR2SC5408NPN EPITAXIAL SILICON TRANSISTORFOR MICROWAVE HIGH-GAIN AMPLIFICATIONFEATURE PACKAGE DIMENSIONS (in mm) High fT17 GHz TYP.2.10.1 High gain1.250.1|S21e|2 = 15.5 dB TYP.@f = 2 GHz, VCE = 2 V, IC = 7 mA NF = 1.1 dB, @f = 2 GHz VCE = 2 V, IC = 1 mA 6-pin Small Mini Mold PackageORDERING INFORMATIONPART NUM

DATA SHEETNPN SILICON RF TRANSISTOR2SC5614NPN SILICON RF TRANSISTOR FORHIGH-FREQUENCY LOW NOISE3-PIN LEAD-LESS MINIMOLDFEATURES NF = 1.4 dB TYP., S21e2 = 10.0 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz 3-pin lead-less minimold packageORDERING INFORMATIONPart Number Quantity Supplying Form2SC5614 50 pcs (Non reel) 8 mm wide embossed taping2SC5614-T3 10 kpcs

DATA SHEETNPN SILICON RF TRANSISTOR2SC5754NPN SILICON RF TRANSISTOR FORMEDIUM OUTPUT POWER AMPLIFICATION (0.4 W)FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)FEATURES Ideal for 460 MHz to 2.4 GHz medium output power amplification PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm High collector efficiency: C = 60% UHS0-HV technology (fT = 25 GHz

DATA SHEETSILICON TRANSISTOR2SC5179NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGEFOR LOW-NOISE MICROWAVE AMPLIFICATIONFEATURES Low current consumption and high gainPACKAGE DIMENSIONS|S21e|2 = 9 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz (Units: mm)|S21e|2 = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz2.10.1 Small Mini-Mold package1.250.1EIAJ: SC-

DATA SHEETNPN SILICON RF TRANSISTOR2SC5655NPN SILICON RF TRANSISTOR FORHIGH-FREQUENCY LOW NOISE3-PIN NON-LEAD MINIMOLDFEATURES 1006 package employed (1.0 0.6 0.5 mm) NF = 1.5 dB TYP., S21e2 = 4.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHzORDERING INFORMATIONPart Number Quantity Supplying Form2SC5655 50 pcs (Non reel) 8 mm wide paper carrier taping2SC

DATA SHEETNPN SILICON RF TRANSISTOR2SC5746NPN SILICON RF TRANSISTOR FORHIGH-FREQUENCY LOW NOISE3-PIN LEAD-LESS MINIMOLDFEATURES Low voltage operation, low phase distortion Ideal for OSC applications 3-pin lead-less minimold packageORDERING INFORMATIONPart Number Quantity Supplying Form2SC5746 50 pcs (Non reel) 8 mm wide embossed taping2SC5746-T3 10 kpcs/re

DATA SHEETNPN SILICON RF TRANSISTOR2SC5753NPN SILICON RF TRANSISTOR FORMEDIUM OUTPUT POWER AMPLIFICATION (60 mW)FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLDFEATURES Ideal for medium output power amplification PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm HFT3 technology (fT = 12 GHz) adopted High reliability through use of gold electrodes Fla

DATA SHEETNPN SILICON RF TRANSISTOR2SC5599NPN SILICON RF TRANSISTOR FORLOW NOISE HIGH-GAIN AMPLIFICATION3-PIN ULTRA SUPER MINIMOLDFEATURES Low voltage operation, low phase distortion Ideal for OSC applications 3-pin ultra super minimold package(t = 0.75 mm)ORDERING INFORMATIONPart Number Quantity Supplying Form2SC5599 50 pcs (Non reel) 8 mm wide embossed

DATA SHEETNPN SILICON RF TRANSISTOR2SC5336NPN SILICON RF TRANSISTOR FORHIGH-FREQUENCY LOW DISTORTION AMPLIFIER4-PIN POWER MINIMOLDFEATURES High gain: S21e2 = 12 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz 4-pin power minimold package with improved gain from the 2SC3357ORDERING INFORMATIONPart Number Quantity Supplying Form2SC5336 25 pcs (Non reel) Magazine

DATA SHEETSILICON TRANSISTOR2SC5194MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTORFEATURES PACKAGE DRAWINGS Low Voltage Operation, Low Phase Distortion (Unit: mm) Low Noise2.10.2NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz1.250.1NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz Large Absolute Maximum Collector CurrentIC = 100 mA 4-P

DATA SHEETNPN SILICON RF TRANSISTOR2SC5437NPN EPITAXIAL SILICON TRANSISTORFOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATIONFLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLDFEATURES Contains same chip as 2SC5195 Flat-lead 3-pin thin-type ultra super minimold packageORDERING INFORMATIONPart Number Quantity Supplying Form2SC5437 50 pcs (Non reel) 8 mm wide embossed taping2S

NEC's NPN SILICON HIGH NE680FREQUENCY TRANSISTOR SERIESFEATURES HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz LOW NOISE FIGURE:1.7 dB at 2 GHz2.6 dB at 4 GHz HIGH ASSOCIATED GAIN:12.5 dB at 2 GHz8.0 dB at 4 GHz EXCELLENT LOW VOLTAGE00 (CHIP) 35 (MICRO-X)LOW CURRENT PERFORMANCEDESCRIPTIONNEC's NE680 series of NPN epitaxial silicon transistors isdesigned for l

DATA SHEETSILICON TRANSISTORNE58219 / 2SC5004NPN SILICON EPITAXIAL TRANSISTOR3 PINS ULTRA SUPER MINI MOLDDESCRIPTIONPACKAGE DIMENSIONSThe NE58219 / 2SC5004 is a low supply voltage transistor in millimetersdesigned for UHF OSC/MIX.It is suitable for a high density surface mount assembly since the1.6 0.10.8 0.1transistor has been applied ultra super mini mold packa

DATA SHEETNPN SILICON RF TRANSISTOR2SC5745NPN SILICON RF TRANSISTOR FORHIGH-FREQUENCY LOW NOISEFLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLDFEATURES Low voltage operation, low phase distortion Ideal for OSC applications Flat-lead 3-pin thin-type ultra super minimold packageORDERING INFORMATIONPart Number Quantity Supplying Form2SC5745 50 pcs (Non reel) 8 mm

DATA SHEETNPN SILICON RF TRANSISTOR2SC5432NPN EPITAXIAL SILICON TRANSISTORFOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATIONFLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLDFEATURES Contains same chip as 2SC5006 Flat-lead 3-pin thin-type ultra super minimold packageORDERING INFORMATIONPart Number Quantity Supplying Form2SC5432 50 pcs (Non reel) 8 mm wide embossed taping2S

DATA SHEETNPN SILICON RF TRANSISTOR2SC5668NPN SILICON RF TRANSISTOR FORLOW NOISE HIGH-GAIN AMPLIFICATIONFLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLDFEATURES Ideal for low noise high-gain amplification and oscillation at 3 GHz or overNF = 1.1 dB TYP., Ga = 11 dB @ f = 2 GHz, VCE = 2 V, IC = 5 mA Maximum available power gain: MAG. = 12.5 dB TYP. @ f

PRELIMINARY DATA SHEETNPN SILICON TRANSISTOR NE687M23OUTLINE DIMENSIONS (Units in mm)FEATURESPACKAGE OUTLINE M23 NEW MINIATURE M23 PACKAGE: World's smallest transistor package footprint leads are completely underneath package body0.5 Low profile/0.55 mm package height Ceramic substrate for better RF performance0.251 HIGH GAIN BANDWIDTH PRODUCT:fT =

DATA SHEETNPN SILICON RF TRANSISTOR2SC5676NPN SILICON RF TRANSISTOR FORHIGH-FREQUENCY LOW NOISEFLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLDFEATURES Low voltage operation, low phase distortion Ideal for OSC applications Flat-lead 3-pin thin-type ultra super minimold packageORDERING INFORMATIONPart Number Quantity Supplying Form2SC5676 50 pcs (Non reel) 8 mm

DATA SHEETNPN SILICON RF TRANSISTOR2SC5801NPN SILICON RF TRANSISTOR FORHIGH-FREQUENCY LOW NOISE3-PIN LEAD-LESS MINIMOLDFEATURES Low phase distortion, low voltage operation Ideal for OSC applications 3-pin lead-less minimold packageORDERING INFORMATIONPart Number Quantity Supplying Form2SC5801 50 pcs (Non reel) 8 mm wide embossed taping2SC5801-T3 10 kpcs/re

PRELIMINARY DATA SHEETNPN SILICON TRANSISTOR NE688M13OUTLINE DIMENSIONS (Units in mm)FEATURESPACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: Small transistor outline +0.1+0.10.50.050.150.05 0.31.0 X 0.5 X 0.5 mm Low profile / 0.50 mm package height12 Flat lead style for better RF performance0.35 HIGH GAIN BANDWIDTH PRODUCT:+0.1+0.1

DATA SHEETSILICON TRANSISTOR2SC5005NPN SILICON EPITAXIAL TRANSISTOR3 PINS ULTRA SUPER MINI MOLDDESCRIPTIONPACKAGE DIMENSIONSThe 2SC5005 is a low supply voltage transistor designed for UHFin millimetersOSC/MIX.It is suitable for a high density surface mount assembly since thetransistor has been applied ultra super mini mold package. 1.6 0.10.8 0.12FEATURES

DATA SHEETSILICON TRANSISTOR2SC5183NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLDPACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATIONFEATURES Low Noise PACKAGE DIMENSIONS (Units: mm) NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz2.8+0.2 0.3 4-pin Mini-Mold package1.5+0.2 0.1EIAJ: SC-61ORDERING

DATA SHEETSILICON TRANSISTOR2SC5006NPN SILICON EPITAXIAL TRANSISTOR3 PINS ULTRA SUPER MINI MOLDDESCRIPTIONThe 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers fromVHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic rangeand excellent linearity. This is achieved by direc

PRELIMINARY DATA SHEETSILICON TRANSISTOR2SC5369NPN EPITAXIAL SILICON TRANSISTOR FORMICROWAVE AMPLIFICATIONFEATURES PACKAGE DIMENSION (in mm) High fT2.10.114 GHz TYP.1.250.1 High gain| S21e | 2 = 14 dB TYP.@f = 2 GHz, VCE = 3 V, IC = 10 mA NF = 1.3 dB, @f = 2 GHz, VCE= 3 V, IC = 3 mA 6-pin small mini mold packageABSOLUTE MAXIMUM RATINGS (TA = 25 C)

DATA SHEETNPN SILICON RF TRANSISTOR2SC5602NPN SILICON RF TRANSISTOR FORLOW NOISE HIGH-GAIN AMPLIFICATION3-PIN ULTRA SUPER MINIMOLDFEATURES High-gain transistor for buffer amplifier : S21e2 = 10.0 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 5 mA fT = 25 GHz UHS0 (Ultra High Speed Process) technology adopted 3-pin ultra super minimold package (t = 0.75 mm)ORDE

PRELIMINARY DATA SHEETSILICON TRANSISTOR2SC5455NPN EPITAXIAL SILICON TRANSISTOR4-PIN MINI MOLDFEATURE PACKAGE DIMENSIONS (in mm) Ideal for medium-output applications+0.22.8 0.3+0.2 High gain, low noise1.5 0.1 Small reverse transfer capacitance Can operate at low voltageABSOLUTE MAXIMUM RATINGS (TA = 25 C)PARAMETER SYMBOL RATING UNITCollector t

DATA SHEETNPN SILICON RF TRANSISTOR2SC5752NPN SILICON RF TRANSISTOR FORMEDIUM OUTPUT POWER AMPLIFICATION (60 mW)4-PIN SUPER MINIMOLDFEATURES Ideal for medium output power amplification PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm HFT3 technology (fT = 12 GHz) adopted High reliability through use of gold electrodes 4-pin super minimold pa

DATA SHEETSILICON TRANSISTOR2SC5014HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTOR4 PINS SUPER MINI MOLDFEATURES Small Package PACKAGE DIMENSIONS High Gain Bandwidth Product (fT = 12 GHz TYP.) in millimeters Low Noise, High Gain2.1 0.2 Low Voltage Operation1.25 0.1 ORDERING INFORMATIONPARTQUANTITY PACKING STYLENUMBER2SC5014

DATA SHEETNPN SILICON RF TRANSISTOR2SC5337NPN SILICON RF TRANSISTOR FORHIGH-FREQUENCY LOW DISTORTION AMPLIFIER4-PIN POWER MINIMOLDFEATURES Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA Low noiseNF = 1.5 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 500 MHzNF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz 4-pin power minimold package wi

DATA SHEETNPN SILICON RF TRANSISTOR2SC5667NPN SILICON RF TRANSISTOR FORLOW NOISE HIGH-GAIN AMPLIFICATION3-PIN ULTRA SUPER MINIMOLDFEATURES Ideal for low noise high-gain amplification and oscillation at 3 GHz or overNF = 1.1 dB TYP., Ga = 11 dB @ f = 2 GHz, VCE = 2 V, IC = 5 mA Maximum available power gain: MAG. = 12.5 dB TYP. @ f = 2 GHz, VCE = 2 V,

PRELIMINARY DATA SHEETSILICON TRANSISTOR2SC5454NPN EPITAXIAL SILICON TRANSISTOR4-PIN MINI MOLDFEATURE PACKAGE DIMENSIONS (in mm) High gain, low noise+0.22.8 0.3+0.2 Small reverse transfer capacitance1.5 0.1 Can operate at low voltageABSOLUTE MAXIMUM RATINGS (TA = 25 C)PARAMETER SYMBOL RATING UNITCollector to Base Voltage VCBO 9V5 5Collector

DATA SHEETNPN SILICON RF TRANSISTOR2SC5600NPN SILICON RF TRANSISTORFLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLDFEATURES Low voltage operation, low phase distortion Ideal for OSC applications Flat-lead 3-pin thin-type ultra super minimold (t = 0.59 mm)ORDERING INFORMATIONPart Number Quantity Supplying Form2SC5600 50 pcs (Non reel) 8 mm wide embossed taping2

DATA SHEETNPN SILICON RF TRANSISTOR2SC5787NPN SILICON RF TRANSISTOR FORHIGH-FREQUENCY LOW NOISE3-PIN LEAD-LESS MINIMOLDFEATURES Ideal for 3 GHz or higher OSC applications Low noise, high gainfT = 20 GHz TYP., S21e2 = 13 dB TYP. @ VCE = 1 V, IC = 20 mA, f = 2 GHzNF = 1.4 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz, ZS = Zopt UHS0 technology (fT = 25 GHz) adopte

PRELIMINARY DATA SHEETNPN SILICON TRANSISTOR NE856M23OUTLINE DIMENSIONS (Units in mm)FEATURESPACKAGE OUTLINE M23 NEW MINIATURE M23 PACKAGE: World's smallest transistor package footprint leads are completely underneath package body0.5 Low profile/0.55 mm package height Ceramic substrate for better RF performance0.251 LOW NOISE FIGURE:NF = 1.4 dB at

DATA SHEETSILICON TRANSISTOR2SC5288NPN SILICON EPITAXIAL TRANSISTORFOR L-BAND LOW-POWER AMPLIFIERThe 2SC5288 is ideal for the driver stage amplifier in 1.9GHz-band digital PACKAGE DRAWINGcordless phones (DECT, PHS, etc.). (Unit: mm)2.8+0.2 FEATURES 0.31.5+0.2 0.1 P1 = 24 dBm TYP.@f = 1.9 GHz, VCC = 3.6 V, ICq = 1 mA (Class AB), Duty = 1/8 4-Pin Mini Mold

PRELIMINARY DATA SHEETNPN SILICON TRANSISTOR NE685M23OUTLINE DIMENSIONS (Units in mm)FEATURESPACKAGE OUTLINE M23 NEW MINIATURE M23 PACKAGE: World's smallest transistor package footprint leads are completely underneath package body0.5 Low profile/0.55 mm package height Ceramic substrate for better RF performance0.251 HIGH GAIN BANDWIDTH PRODUCT:fT =

PRELIMINARY DATA SHEETNPN SILICON TRANSISTOR NE681M23OUTLINE DIMENSIONS (Units in mm)FEATURESPACKAGE OUTLINE M23 NEW MINIATURE M23 PACKAGE: World's smallest transistor package footprint leads are completely underneath package body0.5 Low profile/0.55 mm package height Ceramic substrate for better RF performance0.25 HIGH GAIN BANDWIDTH PRODUCT: 1fT =

DATA SHEETNPN SILICON RF TRANSISTOR2SC5674NPN SILICON RF TRANSISTOR FORHIGH-FREQUENCY LOW NOISE3-PIN LEAD-LESS MINIMOLDFEATURES Ideal for 3 GHz or higher OSC applications Low noise, high gainfT = 21.0 GHz TYP., S21e2 = 11.5 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHzNF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz, ZS = Zopt 3-pin lead-less minimold package

DATA SHEETSILICON TRANSISTOR2SC5195MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTORFEATURES PACKAGE DRAWINGS Low Voltage Operation, Low Phase Distortion (Unit: mm) Low Noise1.60.1NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz0.80.1NF = 1.5 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz2 Large Absolute Maximum Collector CurrentIC = 100 mA S

PRELIMINARY DATA SHEETNPN SILICON TRANSISTOR NE681M13OUTLINE DIMENSIONS (Units in mm)FEATURESPACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: Small transistor outline +0.1+0.10.50.050.150.05 0.31.0 X 0.5 X 0.5 mm Low profile / 0.50 mm package height12 Flat lead style for better RF performance0.35 HIGH GAIN BANDWIDTH PRODUCT:+0.1+0.1

DATA SHEETNPN SILICON RF TRANSISTOR2SC5615NPN SILICON RF TRANSISTOR FORHIGH-FREQUENCY LOW NOISE3-PIN LEAD-LESS MINIMOLDFEATURES 1005 package employed (1.0 0.5 0.5 mm) NF = 1.4 dB TYP., S21e2 = 12.0 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHzORDERING INFORMATIONPart Number Quantity Supplying Form2SC5615 50 pcs (Non reel) 8 mm wide embossed taping2SC561

DATA SHEETNPN SILICON GERMANIUM RF TRANSISTOR2SC5761NPN SiGe RF TRANSISTOR FORLOW NOISE HIGH-GAIN AMPLIFICATIONFLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)FEATURES Ideal for low noise high-gain amplificationNF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz Maximum stable power gain: MSG = 20.0 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz SiGe technology (fT

DATA SHEETSILICON TRANSISTOR2SC5010NPN SILICON EPITAXIAL TRANSISTOR3 PINS ULTRA SUPER MINI MOLDDESCRIPTIONThe 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers fromVHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range andexcellent linearity. This is achieved by direct

DATA SHEETSILICON TRANSISTOR2SC5185NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGEFOR LOW-NOISE MICROWAVE AMPLIFICATIONFEATURESPACKAGE DIMENSIONS Low Noise(Units: mm)NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHzNF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz2.1 0.2 Super Mini-Mold package1.25 0.1ORDERING INFORMATIONPARTQUANTITY ARRA

DATA SHEETNPN SILICON RF TRANSISTOR2SC5434NPN EPITAXIAL SILICON TRANSISTORFOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATIONFLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLDFEATURES Contains same chip as 2SC5008 Flat-lead 3-pin thin-type ultra super minimold packageORDERING INFORMATIONPart Number Quantity Supplying Form2SC5434 50 pcs (Non reel) 8 mm wide embossed taping2S

DATA SHEETNPN SILICON RF TRANSISTOR2SC5704NPN SILICON RF TRANSISTOR FORLOW NOISE HIGH-GAIN AMPLIFICATION6-PIN LEAD-LESS MINIMOLDFEATURES Ideal for low noise high-gain amplification and oscillation at 3 GHz or overNF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz High fT: fT = 25.0 GHz TYP. @ VCE = 3 V, IC = 30 mA, f = 2 GHz 6-pin lead-less mini

DATA SHEETNPN SILICON RF TRANSISTOR2SC5786NPN SILICON RF TRANSISTOR FORHIGH-FREQUENCY LOW NOISEFLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLDFEATURES Ideal for 3 GHz or higher OSC applications Low noise, high gainfT = 20 GHz TYP., S21e2 = 12 dB TYP. @ VCE = 1 V, IC = 20 mA, f = 2 GHzNF = 1.4 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz, ZS = Zopt UHS0 technolog

DATA SHEETSILICON TRANSISTOR2SC5181NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGEFOR LOW-NOISE MICROWAVE AMPLIFICATIONFEATURES Low current consumption and high gainPACKAGE DIMENSIONS|S21e|2 = 10.5 dBTYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz (Units: mm)|S21e|2 = 9.0 dBTYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz1.6 0.1 Ultra Super Mini-Mold package 0.8

DATA SHEETSILICON TRANSISTOR2SC5192MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTOR4 PINS MINI MOLDFEATURES PACKAGE DRAWINGS Low Voltage Operation, Low Phase Distortion (Unit: mm) Low NoiseNF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz +0.22.8 0.3+0.2NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz1.5 0.1 Large Absolute Maximum Collect

DATA SHEETNPN SILICON RF TRANSISTOR2SC5737NPN SILICON RF TRANSISTOR FORHIGH-FREQUENCY LOW NOISEFLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLDFEATURES Low voltage operation, low phase distortion Ideal for VCO applications Flat-lead 3-pin thin-type ultra super minimold packageORDERING INFORMATIONPart Number Quantity Supplying Form2SC5737 50 pcs (Non reel) 8 mm

DATA SHEETSILICON TRANSISTOR2SC5012HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTOR4 PINS SUPER MINI MOLDFEATURES Small Package PACKAGE DIMENSIONS High Gain Bandwidth Product (fT = 9 GHz TYP.) in millimeters Low Noise, High Gain2.1 0.2 Low Voltage Operation1.25 0.1 0.3 +0.1 0.05 (LEADS 2, 3, 4) ORDERING INFORMATION2 3 P

DATA SHEETSILICON TRANSISTOR2SC5011HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTOR4 PINS SUPER MINI MOLDFEATURES Small Package PACKAGE DIMENSIONS High Gain Bandwidth Product in millimeters(fT = 6.5 GHz TYP.)2.1 0.2 Low Noise, High Gain 1.25 0.1 0.3 +0.1 0.05 Low Voltage Operation(LEADS 2, 3, 4) 2 3 ORDERING INFORMATION

DATA SHEETNPN SILICON RF TRANSISTOR2SC5656NPN SILICON RF TRANSISTOR FORHIGH-FREQUENCY LOW NOISE3-PIN NON-LEAD MINIMOLDFEATURES 1006 package employed (1.0 0.6 0.5 mm) NF = 1.3 dB TYP., S21e2 = 10.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHzORDERING INFORMATIONPart Number Quantity Supplying Form2SC5656 50 pcs (Non reel) 8 mm wide paper carrier taping2S

DATA SHEETNPN SILICON RF TRANSISTOR2SC5800NPN SILICON RF TRANSISTOR FORHIGH-FREQUENCY LOW NOISEFLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLDFEATURES Low phase distortion, low voltage operation Ideal for OSC applications Flat-lead 3-pin thin-type ultra super minimold packageORDERING INFORMATIONPart Number Quantity Supplying Form2SC5800 50 pcs (Non reel) 8 mm

DATA SHEETNPN SILICON RF TRANSISTOR2SC5603NPN SILICON RF TRANSISTORFLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLDFEATURES High-gain transistor for buffer amplifier : S21e2 = 10.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz fT = 25 GHz UHS0 (Ultra High Speed Process) technology adopted Flat-lead 3-pin thin-type ultra super minimold packageORDERING INFORMATION

DATA SHEETSILICON TRANSISTOR2SC5009NPN SILICON EPITAXIAL TRANSISTOR3 PINS ULTRA SUPER MINI MOLDDESCRIPTIONThe 2SC5009 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONSin low noise and small signal amplifiers from VHF band to L band. Low in milimetersnoise figure, high gain, and high current capability achieve a very wide1.6 0.1 dynamic range and e

DATA SHEETSILICON TRANSISTOR2SC5178NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGEFOR LOW-NOISE MICROWAVE AMPLIFICATIONFEATURES Low current consumption and high gainPACKAGE DIMENSIONS|S21e|2 = 11.5 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz(Units: mm)|S21e|2 = 10.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz2.8 +0.2 0.3 4-pin Mini-Mold package1.5 +

PRELIMINARY DATA SHEETSILICON TRANSISTOR2SC5409NPN EPITAXIAL SILICON TRANSISTORFOR MICROWAVE HIGH-GAIN AMPLIFICATIONFEATURE PACKAGE DIMENSIONS (in mm) High fT16 GHz TYP.2.10.1 High gain1.250.1|S21e|2 = 14 dB TYP.@f = 2 GHz, VCE = 2 V, IC = 20 mA NF = 1.1 dB, @f = 2 GHz VCE = 2 V, IC = 3 mA 6-pin Small Mini Mold PackageORDERING INFORMATIONPART NUMB

NEC's NPN SILICON HIGH NE681FREQUENCY TRANSISTOR SERIESFEATURES HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz LOW NOISE FIGURE:1.2 dB at 1 GHz1.6 dB at 2 GHz HIGH ASSOCIATED GAIN:15 dB at 1 GHz12 dB at 2 GHz LOW COST00 (CHIP) 35 (MICRO-X)DESCRIPTIONNEC's NE681 series of NPN epitaxial silicon transistors aredesigned for low noise, high gain, low cost amplifier a

PRELIMINARY DATA SHEETNPN SILICON RF TRANSISTOR2SC5507NPN SILICON RF TRANSISTOR FOR LOW CURRENT,LOW NOISE, HIGH-GAIN AMPLIFICATIONFLAT-LEAD 4-PIN THIN SUPER MINI-MOLDFEATURES Low noise and high gain with low collector current NF = 1.2 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 2 mA Maximum stable power gain: MSG = 22 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA

DATA SHEETNPN SILICON RF TRANSISTOR2SC5191NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES Low Voltage Operation, Low Phase Distortion Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz Large Absolute Maximum Collector Current IC = 100 mA

PRELIMINARY DATA SHEETNPN SILICON TRANSISTOR NE688M23OUTLINE DIMENSIONS (Units in mm)FEATURESPACKAGE OUTLINE M03 NEW MINIATURE M23 PACKAGE: World's smallest transistor package footprint leads are completely underneath package body0.5 Low profile/0.55 mm package height Ceramic substrate for better RF performance HIGH GAIN BANDWIDTH PRODUCT:0.251fT =

DATA SHEETSILICON TRANSISTOR2SC5007NPN SILICON EPITAXIAL TRANSISTOR3 PINS ULTRA SUPER MINI MOLDDESCRIPTIONThe 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers fromVHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic rangeand excellent linearity. This is achieved by direc

DATA SHEETNPN SILICON RF TRANSISTOR2SC5015NPN EPITAXIAL SILICON RF TRANSISTORFOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION4-PIN SUPER MINIMOLD (18)FEATURES High fT: fT = 12 GHz TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz Low noise and high gain Low voltage operation 4-pin super minimold (18) packageORDERING INFORMATIONPart Number Quantity Supplying Form2SC5015 50

DATA SHEETNPN SILICON RF TRANSISTOR2SC5677NPN SILICON RF TRANSISTOR FORHIGH-FREQUENCY LOW NOISE3-PIN LEAD-LESS MINIMOLDFEATURES Low voltage operation, low phase distortion Ideal for OSC applications 3-pin lead-less minimold packageORDERING INFORMATIONPart Number Quantity Supplying Form2SC5677 50 pcs (Non reel) 8 mm wide embossed taping2SC5677-T3 10 kpcs/re

DATA SHEETNPN SILICON RF TRANSISTOR2SC5606NPN SILICON RF TRANSISTOR FORLOW NOISE HIGH-GAIN AMPLIFICATION3-PIN ULTRA SUPER MINIMOLDFEATURES Suitable for high-frequency oscillation fT = 25 GHz technology adopted 3-pin ultra super minimoldORDERING INFORMATIONPart Number Quantity Supplying Form2SC5606 50 pcs (Non reel) 8 mm wide embossed taping2SC5606-T1 3

DATA SHEET SILICON TRANSISTOR2SC5180NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGEFOR LOW-NOISE MICROWAVE AMPLIFICATIONFEATURESPACKAGE DIMENSIONS Low current consumption and high gain(Units : mm) S21e 2 = 12 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHzS21e 2 = 11 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz2.1 0.2 Supper Mini-Mold package1.

DATA SHEETNPN SILICON RF TRANSISTOR2SC5736NPN SILICON RF TRANSISTOR FORHIGH-FREQUENCY LOW NOISEFLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLDFEATURES Low voltage operation, low phase distortion Ideal for OSC applications Flat-lead 3-pin thin-type ultra super minimold packageORDERING INFORMATIONPart Number Quantity Supplying Form2SC5736 50 pcs (Non reel) 8 mm

DATA SHEETSILICON TRANSISTOR2SC5182NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGEFOR LOW-NOISE MICROWAVE AMPLIFICATIONFEATURESPACKAGE DIMENSIONS Low noise(Units: mm) NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz2.80.2 Mini-Mold package+0.1 1.5 0.65 0.15 EIAJ: SC-59ORDERING INFORMATIO

PRELIMINARY DATA SHEETNPN SILICON TRANSISTOR NE856M13OUTLINE DIMENSIONS (Units in mm)FEATURESPACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: Small transistor outline +0.1+0.10.50.051.0 X 0.5 X 0.5 mm 0.150.05 0.3 Low profile / 0.50 mm package height12 Flat lead style for better RF performance0.35 LOW NOISE FIGURE:+0.1+0.11.0 0.7

DATA SHEETSILICON TRANSISTOR2SC5289NPN SILICON EPITAXIAL TRANSISTORFOR L-BAND LOW-POWER AMPLIFIERThe 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital PACKAGE DRAWINGcordless phones (DECT, PHS, etc.). (Unit: mm)2.8+0.2 FEATURES 0.31.5+0.2 0.1 P1 = 27 dBm TYP.@f = 1.9 GHz, VCC = 3.6 V, ICq = 1 mA (Class AB), Duty = 1/8 4-Pin Mini Mold

PRELIMINARY DATA SHEETNPN SILICON HIGHNE661M04FREQUENCY TRANSISTORFEATURES HIGH GAIN BANDWIDTH: fT = 25 GHz HIGH POWER GAIN: IS21EI2 = 17 dB TYP at 2 GHz LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz HIGH MAXIMUM STABLE GAIN: 22 dB @ 2 GHz NEW LOW PROFILE M04 PACKAGE:SOT-343 footprint, with a height of just 0.59 mm.Flat Lead Style for better RF performance.DESCRI

DATA SHEETNPN SILICON RF TRANSISTOR2SC5435NPN EPITAXIAL SILICON TRANSISTORFOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATIONFLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLDFEATURES Contains same chip as 2SC5010 Flat-lead 3-pin thin-type ultra super minimold packageORDERING INFORMATIONPart Number Quantity Supplying Form2SC5435 50 pcs (Non reel) 8 mm wide embossed taping2S

DATA SHEETDATA SHEETSILICON TRANSISTOR2SC5193MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTORCOMPACT MINI MOLDFEATURESPACKAGE DRAWING(Units: mm) Low Voltage Operation, Low Phase Distortion Low Noise2.10.1NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz1.250.1NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz Large Absolute Maximum Coll

DATA SHEETNPN SILICON RF TRANSISTOR2SC5433NPN EPITAXIAL SILICON TRANSISTORFOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATIONFLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLDFEATURES Contains same chip as 2SC5007 Flat-lead 3-pin thin-type ultra super minimold packageORDERING INFORMATIONPart Number Quantity Supplying Form2SC5433 50 pcs (Non reel) 8 mm wide embossed taping2S

DATA SHEETNPN SILICON RF TRANSISTOR2SC5509NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES Ideal for medium output power amplification NF = 1.2 dB TYP., Ga = 12 dB TYP. @ VCE = 2 V, IC = 10 mA, f = 2 GHz Maximum available power gain: MAG = 14 dB TYP. @ VCE = 2 V, IC = 50 mA

DATA SHEETNPN SILICON RF TRANSISTOR2SC5750NPN SILICON RF TRANSISTOR FORMEDIUM OUTPUT POWER AMPLIFICATION (30 mW)4-PIN SUPER MINIMOLDFEATURES Ideal for medium output power amplification PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm HFT3 technology (fT = 12 GHz) adopted High reliability through use of gold electrodes 4-pin super minimold pa

BC54PAS; BC55PAS; BC56PAS45V/60V/80V, 1A NPN medium power transistorsRev. 1 11 November 2014 Product data sheet1. Product profile1.1 General descriptionNPN medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads.Table 1. Pro

BCP55; BCX55; BC55PA60 V, 1 A NPN medium power transistorsRev. 8 24 October 2011 Product data sheet1. Product profile1.1 General descriptionNPN medium power transistor series in Surface-Mounted Device (SMD) plastic packages.Table 1. Product overviewType number[1] Package PNP complementNXP JEITA JEDECBCP55 SOT223 SC-73 - BCP52BCX55 SOT89 SC-62 TO-243 BCX52BC55PA SOT1061

BCP53; BCX53; BC53PA80 V, 1 A PNP medium power transistorsRev. 9 19 October 2011 Product data sheet1. Product profile1.1 General descriptionPNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages.Table 1. Product overviewType number[1] Package NPN complementNXP JEITA JEDECBCP53 SOT223 SC-73 - BCP56BCX53 SOT89 SC-62 TO-243 BCX56BC53PA SOT1061

BCP54; BCX54; BC54PA45 V, 1 A NPN medium power transistorsRev. 8 21 October 2011 Product data sheet1. Product profile1.1 General descriptionNPN medium power transistor series in Surface-Mounted Device (SMD) plastic packages.Table 1. Product overviewType number[1] Package PNP complementNXP JEITA JEDECBCP54 SOT223 SC-73 - BCP51BCX54 SOT89 SC-62 TO-243 BCX51BC54PA SOT1061

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

BC51PAS; BC52PAS; BC53PAS45 V/60 V/80 V, 1 A PNP medium power transistorsRev. 1 19 June 2015 Product data sheet1. Product profile1.1 General descriptionPNP medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads.Table 1. Pro

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

BCP56; BCX56; BC56PA80 V, 1 A NPN medium power transistorsRev. 9 25 October 2011 Product data sheet1. Product profile1.1 General descriptionNPN medium power transistor series in Surface-Mounted Device (SMD) plastic packages.Table 1. Product overviewType number[1] Package PNP complementNXP JEITA JEDECBCP56 SOT223 SC-73 - BCP53BCX56 SOT89 SC-62 TO-243 BCX53BC56PA SOT1061

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

BCP52; BCX52; BC52PA60 V, 1 A PNP medium power transistorsRev. 9 18 October 2011 Product data sheet1. Product profile1.1 General descriptionPNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages.Table 1. Product overviewType number[1] Package NPN complementNXP JEITA JEDECBCP52 SOT223 SC-73 - BCP55BCX52 SOT89 SC-62 TO-243 BCX55BC52PA SOT1061

BCP56; BCX56; BC56PA80 V, 1 A NPN medium power transistorsRev. 9 25 October 2011 Product data sheet1. Product profile1.1 General descriptionNPN medium power transistor series in Surface-Mounted Device (SMD) plastic packages.Table 1. Product overviewType number[1] Package PNP complementNXP JEITA JEDECBCP56 SOT223 SC-73 - BCP53BCX56 SOT89 SC-62 TO-243 BCX53BC56PA SOT1061

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

BC54PAS; BC55PAS; BC56PAS45V/60V/80V, 1A NPN medium power transistorsRev. 1 11 November 2014 Product data sheet1. Product profile1.1 General descriptionNPN medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads.Table 1. Pro

BCP53; BCX53; BC53PA80 V, 1 A PNP medium power transistorsRev. 9 19 October 2011 Product data sheet1. Product profile1.1 General descriptionPNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages.Table 1. Product overviewType number[1] Package NPN complementNexperia JEITA JEDECBCP53 SOT223 SC-73 - BCP56BCX53 SOT89 SC-62 TO-243 BCX56BC53PA SO

BCP55; BCX55; BC55PA60 V, 1 A NPN medium power transistorsRev. 8 24 October 2011 Product data sheet1. Product profile1.1 General descriptionNPN medium power transistor series in Surface-Mounted Device (SMD) plastic packages.Table 1. Product overviewType number[1] Package PNP complementNexperia JEITA JEDECBCP55 SOT223 SC-73 - BCP52BCX55 SOT89 SC-62 TO-243 BCX52BC55PA SO

BC51PAS; BC52PAS; BC53PAS45 V/60 V/80 V, 1 A PNP medium power transistorsRev. 1 19 June 2015 Product data sheet1. Product profile1.1 General descriptionPNP medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads.Table 1. Pro

BCP51; BCX51; BC51PA45 V, 1 A PNP medium power transistorsRev. 9 13 October 2011 Product data sheet1. Product profile1.1 General descriptionPNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages.Table 1. Product overviewType number[1] Package NPN complementNexperia JEITA JEDECBCP51 SOT223 SC-73 - BCP54BCX51 SOT89 SC-62 TO-243 BCX54BC51PA SO

BCP51; BCX51; BC51PA45 V, 1 A PNP medium power transistorsRev. 9 13 October 2011 Product data sheet1. Product profile1.1 General descriptionPNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages.Table 1. Product overviewType number[1] Package NPN complementNXP JEITA JEDECBCP51 SOT223 SC-73 - BCP54BCX51 SOT89 SC-62 TO-243 BCX54BC51PA SOT1061

NPN TRIPLE DIFFUSEDKSC5086 PLANAR SILICON TRANSISTORHIGH DEFINITION COLOR DISPLAYTO-3PFHORIZONTAL DEFLECTION OUTPUT(DAMPER DIODE BUILT IN) High Collector -Base Voltage (VCBO=1500V) High Speed Switching (tf=0.1usec Typ)ABSOLUTE MIXIMUM RATINGCharacteristic Symbol Rating Unit Collector Base Voltage VCBO 1500 V Collector Emitter Voltage VCEO 800 V Emitter Base Voltag

KSC5338D NPN SILICON TRANSISTORTO-220HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION Wide S.O.A. Built-in Free-wheel Diode Suitable for ballast App;ication Low Variable Storage-time spreadABSOLUTE MIXIMUM RATINGCharacteristic Symbol Rating Unit 1.Base 2.Collector 3.Emitter Collector Base Voltage VCBO 1000 V Collector Emitter Voltage VCEO 450 VInternal schematic diagram

NPN TRIPLE DIFFUSEDKSC5321F PLANAR SILICON TRANSISTORHIGH VOLTAGE AND HIGH RELIABILITYTO-220F High speed Switching Wide Safe Operating AreaABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector Base Voltage VCBO 800 V Collector Emitter Voltage VCEO 500 V Emitter Base Voltage VEBO 7 V Collector Current DC IC 5 APulse ICP 10 Base Current DC IB 2 APu

KSC5337F NPN SILICON TRANSISTORHIGH VOLTAGE AND HIGH RELIABILITY HIGH SPEED SWITCHINGTO-220F WIDE SOAABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating UnitV Collector-Base Vltage VCBO 700V Collector-Emitter Voltage V CEO 400V Emitter-Base Voltage VEBO 9A Collector Current (DC) IC 8A Collector Current (Pulse) IC 15A Base Current IB 4W Collector Di

NPN TRIPLE DIFFUSEDKSC5321 PLANAR SILICON TRANSISTORHIGH VOLTAGE AND HIGH RELIABILITYTO-220 High speed Switching Wide Safe Operating AreaABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector Base Voltage VCBO 800 V Collector Emitter Voltage VCEO 500 V Emitter Base Voltage VEBO 7 V Collector Current DC IC 5 APulse ICP 10 Base Current DC IB 2 A1.Ba

KSC5030 NPN SILICON TRANSISTORHIGH VOLTAGE AND HIGH RELIABILTYTO-3PHIGH SPEED SWITCHINGWIDE SOAABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector- Base Voltage VCBO 1100 V Collector- Emitter Voltage VCEO 800 V Emitter- Base Voltage VEBO 7 V Collector Current (DC) IC 6 A Collector Current (Pulse) IC 20 A Base Current IB 3 A Collector Dissipation (TC=25

KSC5027F NPN SILICON TRANSISTORHIGH VOLTAGE AND HIGH RELIABILITYHIGH SPEED SWITCHINGTO-220FWIDE SOAABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1100 V Collector-Emitter Voltage V CEO 800 V Emitter-Base Voltage VEBO 7 V Collector Current (DC) IC 3 A Collector Current (Pulse) IC 10 A Base Current IB 1.5 A Collector Dissipation (TC

KSC5338F NPN SILICON TRANSISTORHIGH VOLTAGE POWER SWITCHSWITCHING APPLICATIONTO-220F High Speed Switching Wide SOAABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1000 V Collector-Emitter Voltage VCEO 450 V Emitter-Base Voltage VEBO 9 V Collector Current (DC) IC 5 A Collector Current (Pulse) IC 10 A Base Current (DC) IB 2 A1

KSC5039 NPN SILICON TRANSISTORHIGH VOLTAGE POWER SWITCHTO-220SWITCHING APPLICATIONABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 800 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 7 V Collector Current (DC) IC 5 A Collector Current (Pulse) IC 10 A Base Current IB 3 A Collector Dissipation ( TC=25 ) PC 70 W1.Base

NPN TRIPLE DIFFUSEDKSC5337 PLANER SILICON TRANSISTORHIGH VOLTAGE POWER SWITCHTO-220SWITCHING APPLICATION High Speed Switching Wide SOAABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating UnitV Collector-Base Voltage VCBO 700V Collector-Emitter Voltage VCEO 400V Emitter-Base Voltage VEBO 9A Collector Current (DC) IC 8A Collector Current (Pulse) IC 15A

NPN TRIPLE DIFFUSEDKSC5367 PLANAR SILICON TRANSISTORHIGH VOLTAGE AND HIGH RELIABILITYTO-220 High speed Switching Wide Safe Operating Area High Collector Base VoltageABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector Base Voltage VCBO 1600 V Collector Emitter Voltage VCEO 800 V Emitter Base Voltage VEBO 12 V Collector Current DC IC 3 A Pulse I

NPN TRIPLE DIFFUSEDKSC5367F PLANAR SILICON TRANSISTORHIGH VOLTAGE AND HIGH RELIABILITY High speed Switching TO-220F Wide Safe Operating Area High Collector Base VoltageABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector Base Voltage VCBO 1,600 V Collector Emitter Voltage VCEO 800 V Emitter Base Voltage VEBO 12 V Collector Current DC IC 3 A Pulse

KSC5021 NPN SILICON TRANSISTORHIGH VOLTAGE AND HIGH RELIABILITYTO-220HIGH SPEED SWITCHING : tf = 0.1 (Typ)WIDE SOAABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 800 V Collector-Emitter Voltage VCEO 500 V Emitter-Base Voltage VEBO 7 V Collector Current (DC) IC 5 A Collector Current (Pulse) IC 10 A Base Current IB 2 A1.Base 2.Collec

KSC5039F NPN PLANAR SILICON TRANSISTORHIGH VOLTAGE POWER SWITCHSWITCHING APPLICATION TO-220FABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 800 V Collector-Emitter Voltage V CEO 400 V Emitter-Base Voltage VEBO 7 V Collector Current (DC) IC 5 A Collector Current (Pulse) IC 10 A Base Current IB 3 A Collector Dissipation (TC=25 ) PC 30 W

KSC5027 NPN SILICON TRANSISTORHIGH VOLTAGE AND HIGH RELIABILITYTO-220HIGH SPEED SWITCHINGWIDE SOAABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1100 V Collector-Emitter Voltage VCEO 800 V Emitter-Base Voltage VEBO 7 V Collector Current (DC) IC 3 A Collector Current (Pulse) IC 10 A Base Current IB 1.5 A1.Base 2.Collector 3.Emitter

KSC5338 NPN SILICON TRANSISTORHIGH VOLTAGE POWER SWITCHTO-220SWITCHING APPLICATION High Speed Switching Wide SOAABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1000 V Collector-Emitter Voltage VCEO 450 V Emitter-Base Voltage VEBO 9 V Collector Current (DC) IC 5 A1.Base 2.Collector 3.Emitter Collector Current (Pulse) IC 10 A

2SC5876U3DatasheetMedium power transistor (60V, 0.5A)lOutlinel SOT-323 Parameter Value SC-70 VCEO60VIC500mAUMT3lFeatures lInner circuitl l1)High speed switching. (Tf:Typ.:80ns at IC=500mA)2)Low saturation voltage, typically (Typ.:150mV at IC=100mA, IB=10mA)3)Strong discharge power for inductive load and ca

2SC5876DatasheetMedium power transistor (60V, 0.5A)lOutlinelParameter Value UMT3VCEO60VIC500mASOT-323SC-70 lFeaturesl1)High speed switching.lInner circuitl (Tf:Typ.:80ns at IC=500mA)2)Low saturation voltage, typically (Typ.:150mV at IC=100mA, IB=10mA)3)Strong discharge power for

2SC5875 Transistors Power transistor (30V, 2A) 2SC5875 External dimensions (Unit : mm) Features 1) High speed switching. ATV2.56.8(Tf : Typ. : 20ns at IC = 2A) 2) Low saturation voltage, typically :(Typ. 200mV at IC = 1.0A, IB = 0.1A) 0.65Max.3) Strong discharge power for inductive load and 0.5(1) (2) (3)capacitance load. 2.54 2.541.05 0.45(1) Emitter

2SC5730K Transistors Medium power transistor (30V, 1A) 2SC5730K External dimensions (Unit : mm) Features 1) High speed switching. SMT3(Tf : Typ. : 50ns at IC = 1.0A) (SC-59)2) Low saturation voltage, typically :(Typ. 150mV at IC = 500mA, IB = 50mA) 1.63) Strong discharge power for inductive load and 2.8capacitance load. (1) Emitter4) Complements th

AEC-Q101 QualifiedHigh-frequency Amplifier Transistor (25V, 50mA, 300MHz) 2SC5659 / 2SC4618 / 2SC4098 / 2SC2413K 2SC5659FHA / 2SC4618FRA / 2SC4098FRA / 2SC2413KFeatures Dimensions (Unit : mm) 1) Low collector capacitance. (Cob : Typ. 1.3pF) 2SC5659FHA2SC56591.22) Low rbb, high gain, and excellent noise characteristics. 0.2 0.8 0.2(2)(3)(1)(1) Base0.15Max.

2SC5001 Transistors Low VCE(sat) Transistor (Strobe flash) (20V, 10A) 2SC5001 External dimentions (Unit : mm) Features 1) Low saturation voltage, typically VCE(sat) = 0.13V at IC / CPT36.55.1IB= 4A / 50mA. 2.30.52) High current capacity, typically IC = 10A for DC operation and 15A for 10ms pulse. 3) Complements the 2SA1834. 0.75 Packaging specifications

High-frequency Amplifier Transistor (25V, 50mA, 300MHz) 2SC5659 / 2SC4618 / 2SC4098 / 2SC2413K Features Dimensions (Unit : mm) 1) Low collector capacitance. (Cob : Typ. 1.3pF) 2SC56591.22) Low rbb, high gain, and excellent noise characteristics. 0.2 0.8 0.2(2)(3)(1)(1) Base0.15Max.ROHM : VMT3(2) EmitterAbsolute maximum ratings (Ta=25C) (3) Collector

2SC5053 Transistors Medium power transistor (50V, 1A) 2SC5053 Features Dimensions (Unit : mm) 1) Low saturation voltage, typically VCE(sat) = 0.12V at IC / MPT3IB = 500mA / 50mA 2) PC=2W (on 40400.7mm ceramic board) 3) Complements the 2SA1900 (1)Base(2)Collector (3)Emitter Absolute maximum ratings (Ta=25C) Parameter Symbol Limits UnitVCBO 60 VCollector-b

2SC5574TransistorsPower Transistor (80V, 4A)2SC5574 Features External dimensions (Units : mm)1) Low saturation voltage.(Typ. VCE(sat) = 0.3V at IC / IB =2 / 0.2A)10.0 4.52) Excellent DC current gain characteristics.3.2 2.8 3) Pc = 30W (Tc = 25C)4) Wide SOA (safe operating area).1.21.35) Complements the 2SA2017.0.80.752.54 2.54 2.6(1) (2) (3)( )(1) (

2SA1834TransistorsTransistors2SC5001(96-106-B217)(96-193-D217)292Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document are for reference onl

2SC5824DatasheetNPN 3.0A 60V Middle Power TransistorOutline MPT3Parameter ValueVCEO60BaseIC3A CollectorEmitter2SC5824Features(SC-62)1) Suitable for Middle Power Driver2) Complementary PNP Types : 2SA20713) Low VCE(sat)VCE(sat)=0.50V(Max.)(IC/IB=2A/200mA)4) Lead Free/RoHS Compliant.Inner circuitCollectorApplicationsMotor drive

2SC5730 Transistor Medium power transistor (30V, 1.0A) 2SC5730 External dimensions (Units : mm) Features 1) High speed switching. (Tf : Typ. : 35ns at IC = 1.0A) 2.8TSMT31.62) Low saturation voltage, typically (Typ. : 150mV at IC = 500mA, IB = 50mA) 3) Strong discharge power for inductive load and capacitance load. (1) Base(2) Emitter4) Complements the 2SA2048

2SC5576TransisitorsMedium Power Transistor(Motor or Relay drive) (6010V, 4A)2SC5576 Features Circuit diagram1) Built-in zener diode between collector and base.C2) Strong protection against reverse power surges due to "L" loads.B3) Built-in resistor between base and emitter.4) Built-in damper diode.R1 R2EB : BaseR1 4.5kC : Collector R2 300E : Emitter

2SC5662DatasheetHigh-frequency Amplifier Transistor (11V, 50mA, 3.2GHz)lOutlinel SOT-723 Parameter Value SC-105AA VCEO11VIC50mAVMT3 lFeatures lInner circuitl l1)High transition frequency.(Typ.fT=3.2GHz)2)Small rbb'Cc and high gain.(Typ.4ps)3)Small NF.lApplicationlHIGH

2SC5825 Transistors Power transistor (60V, 3A) 2SC5825 Dimensions (Unit : mm) Features 1) High speed switching. CPT3(Tf : Typ. : 30ns at IC = 3A) (SC-63)2) Low saturation voltage, typically :(Typ. 200mV at IC = 2A, IB = 0.2mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2073 (1) Base(2) Collector Applica

2SC5103TransistorsHigh speed switching transistor (60V, 5A)2SC5103 External dimensions (Units : mm) Features1) Low VCE(sat) (Typ. 0.15V at IC / IB = 3 / 0.15A)2) High speed switching (tf : Typ. 0.1 s at IC = 3A)5.5 1.53) Wide SOA. (safe operating area)0.94) Complements the 2SA1952.C0.50.8Min.(1) Base(Gate)1.52.5 (2) Collector(Drain)ROHM : CPT39.5(3) Emitt

2SC5511TransistorsHigh-voltage Switching(Audio output amplifier transistor,TV velocity modulation transistor)(160V, 1.5A)2SC5511 Features External dimensions (Units : mm)1) Flat DC current gain characteristics.2) High breakdown voltage. (BVCEO = 160V)10.0 4.53) High fT. (Typ. 150MHz)3.2 2.8 4) Wide SOA (safe operating area).5) Complements the 2SA2005.1.21.3

Medium power transistor (60V, 0.5A) 2SC5868 Features Dimensions (Unit : mm) 1) High speed switching. TSMT32.8(Tf : Typ. : 80ns at IC = 500mA) 1.62) Low saturation voltage, typically :(Typ. 75mV at IC = 100mA, IB = 10mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2090 (1) Base(2) Emitter0.3 0.6Each lead has sam

TransistorsPower management(dual digital transistors)UMC5N / FMC5AFFeatures FExternal dimensions (Units: mm)1) Both the DTA143X chip andDTC144E chip in a UMT or SMTpackage.2) Ideal for power switch circuits.3) Mounting cost and area can be cutin half.FStructureEpitaxial planar typeNPN/PNP silicon transistor(Built-in resistor type)FAbsolute maximum ratings (Ta = 25_

High voltage discharge, High speed switching, Low Noise (60V, 1A) 2SC5865 Features Dimensions (Unit : mm) 1) High speed switching. ( Tf : Typ. : 50ns at IC = 1.0A) TSMT3 1.0MAX2) Low saturation voltage, typically. 2.90.85:(Typ. 200mV at IC = 500mA, IB = 50mA) 0.4 0.73) Strong discharge power for inductive load and ( )3capacitance load. 4) Low Noise. 5) Co

2SC5532TransistorsHigh-voltage Switching Transistor(400V, 5A)2SC5532 Features1) Low VCE(sat). (Typ. 0.6V at IC / IB = 5/1A)2) High switching speed. (tf : Max. 1s at Ic =4A)3) Wide SOA (safe operating area). Absolute maximum ratings (Ta = 25C)Parameter Symbol Limits UnitCollector-base voltage VCBO 400 VCollector-emitter voltage VCEO 400 VEmitter-base voltage VEBO 7

2SC5866DatasheetMedium power transistor (60V, 2A)lOutlinelParameter Value TSMT3VCEO60VIC2ASOT-346TSC-96 lFeaturesl1)High speed switching. lInner circuitl (tf:Typ.:35ns at IC=2A)2)Low saturation voltage, typically (Typ.:200mV at IC=1.0A, IB=100mA)3)Storong discharge power for indu

2SC5526TransistorsHigh-speed Switching Transistor(60V, 12A)2SC5526 External dimensions (Units: mm) Features1) Low saturation voltage.(Typ. VCE(sat) = 0.15V at IC / IB = 6A / 0.3A)10.0 4.52) High switching speed. 2.83.2 (Typ. tf = 0.1s at Ic = 6A)3) Wide SOA. (safe operating area)1.21.34) Complements the 2SA2007.0.80.752.54 2.54 2.6(1) (2) (3)( )

2SA1964TransistorsTransistors2SC5248(SPEC-A315)(SPEC-C315)282

2SC5060TransistorsPower transistor (9010V, 3A)2SC5060 External dimensions (Units : mm) Features1) Built-in zener diode between collector and base.2) Zener diode has low voltage dispersion.2.56.83) Strong protection against reverse power surges due to Lloads.4) Darlington connection for high DC current gain.0.65Max.5) Built-in resistor between base and emitter

2SC5877S Transistors Power transistor (60V, 0.5A) 2SC5877S External dimensions (Unit : mm) Features 1) High speed switching. 4.0 2.0SPT(Tf : Typ. : 80ns at IC = 500mA) 2) Low saturation voltage, typically : 0.45(Typ. 150mV at IC = 100mA, IB = 10mA) 3) Strong discharge power for inductive load and 2.50.5 0.45capacitance load. 5.0(1) Emitter4) Complements t

2SC5916 Transistor Medium power transistor (30V, 2A) 2SC5916 External dimensions (Units : mm) Features 1) High speed switching. (Tf : Typ. : 20ns at IC = 2A) 2.8TSMT31.62) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 0.1A) 3) Strong discharge power for inductive load and capacitance load. (1) Base4) Complements the 2SA2113 (2) EmitterEach

High-Frequency Amplifier Transistor (20V, 50mA, 1.5GHz) 2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K Features Dimensions (Unit : mm) 1) High transition frequency. (Typ. fT = 1.5GHz) 2SC56612) Small rbbCc and high gain. (Typ. 6ps) 3) Small NF. (1) BasePackaging specifications and hFE ROHM : VMT3 (2) EmitterType 2SC5661 2SC4725 2SC4082 2SC3837K(3) CollectorPackage

2SC5874S Transistors Medium power transistor (30V, 1.0A) 2SC5874S External dimensions (Unit : mm) Features 1) High speed switching. 4.0 2.0SPT(Tf : Typ. : 35ns at IC = 1.0A) 2) Low saturation voltage, typically : 0.45(Typ. 150mV at IC = 1.0A, IB = 100mA) 3) Strong discharge power for inductive load and 2.50.5 0.45capacitance load. 5.0(1) Emitter4) Complem

2SC5826 Transistors Power transistor (60V, 3A) 2SC5826 External dimensions (Unit : mm) Features 1) High speed switching. ATV 2.56.8(Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically :(Typ. 200mV at IC = 2A, IB = 0.2mA) 0.65Max.3) Strong discharge power for inductive load and 0.5capacitance load. (1) (2) (3)(1) Emitter2.54 2.544) Compleme

2SC5575TransistorsHigh-voltage Switching Transisitor(Power Supply) (120V, 7A)2SC5575 Features External dimensions (Units : mm)1) Low VCE(sat). (Typ. 0.17V at IC / IB = 5 / 0.5A)2) Fast switching. (tf : Typ. 0.18s at IC = 5A)3) Wide SOA. (safe operating area)10.0 4.53.2 2.8 Absolute maximum ratings (Ta = 25C)1.21.3Parameter Symbol Limits Unit0.8Collecto

2SC5880 Transistors Power transistor (60V, 2A) 2SC5880 Dimensions (Unit : mm) Features 1) High speed switching. ATV(tf : Typ. : 35ns at IC = 2A) 2) Low saturation voltage, typically :(Typ. 200mV at IC = 1.0A, IB = 100mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2093 (1) Emitter(2) CollectorTaping specifications

2SC5663 / 2SC5585 DatasheetLow frequency transistor (12V, 500mA)lOutlinelParameter Value SOT-723 SOT-416VCEO12VIC500mA 2SC5663 2SC5585(VMT3) (EMT3)lFeatures l 1)High current2)Low VCE(sat).VCE(sat)250mV at IC=200mA/IB=10mAlApplicationlLOW FREQUENCY

Transistors 2SC5274(96-203-C329)304

2SC5147TransistorsMedium Power Transistor(Chroma Output) (300V, 0.1A)2SC5147 Features External dimensions (Units : mm)1) High breakdown voltage. (BVCEO = 300V)2) Low collector output capacitance.10.0 4.5 (Typ.3pF at VCB = 30V)3.2 2.8 3) Wide SOA. (safe operating area)4) Ideal for color TV chroma output and amplification of1.21.3 video signals.0.80.752.54

AEC-Q101 QualifiedMedium power transistor (60V, 0.5A) 2SC5876FRAFeatures Dimensions (Unit : mm)1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA) UMT32) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA) 1.253) Strong discharge power for inductive load and 2.1capacitance load. 2SA2088FRA4) Complements the 2SA2088 0.1Min.Each lea

2SC5585 / 2SC5663 Transistors Low frequency transistor (12V, 0.5A) 2SC5585 / 2SC5663 The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. External dimensions (Unit : mm) Applications For switching 2SC5585For muting (1)(2)(3)0.8 Features 1.61) High current. 2) Low VCE(sat). 0.1Min.(1) Emitter

General purpose transistor (50V, 0.15A) 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S Features Dimensions (Unit : mm) 1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.) 2SC2412K 2SC4081 2SC46172. Complements the 2SA1037AK / 2SA1576A / 2SA1774H / 2SA2029 / 2SA933AS. (1)(2)(3)1.251.6 0.82.12.81.6Structure Epitaxial planar type 0.1Min. 0.1Min.0.3Min.NPN

2SA1900TransistorsTransistors2SC5053(96-115-B352)(96-196-D352)297Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document are for reference onl

2SC5531TransistorsHigh-Voltage Switching Transistor(400V, 2A)2SC5531 Features External dimensions (Units : mm)1) Low VCE(sat). VCE(sat)=0.15V (Typ.)13.1 (IC / IB =1A / 0.2A)3.22) High breakdown voltage.VCEO=400V3) Fast switching.8.8 tf 1.0s( ) 1 Base( ) 2 Collector (IC=0.8A)( ) 3 Emitter0.5Min.ROHM : PSD3EIAJ : SC-83A StructureThree-lay

AEC-Q101 QualifiedGeneral purpose transistor (50V, 0.15A) 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 2SC2412KFRA / 2SC4081FRA / 2SC4617FRA/ /2SC5658FHAFeatures Dimensions (Unit : mm)1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.)2SC2412K 2SC40812SC2412KFRA 2SC4081FRA2. Complements the 2SA1037AK / 2SA1576A /2SA1037AKFRA / 2SA1576AFRA2SA1774FRA / 2SA2029FHA 2SA1774H / 2SA2029

2SC2412K / 2SC4081 / 2SC4617 /Transistors 2SC5658 / 2SC1740SGeneral purpose transistor (50V, 0.15A)2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 /2SC1740S External dimensions (Units : mm) Features1) Low Cob.2SC2412K 2SC4081 2SC4617Cob=2.0pF (Typ.)(1)2) Complements the 2SA1037AK /(2)(3)1.252SA1576A / 2SA1774H /1.6 0.82.12.82SA2029 / 2SA933AS.1.60.1Min. 0.1Min.

2SC5161TransistorsHigh-Voltage Switching Transistor(400V, 2A)2SC5161 External dimensions (Units : mm) Features1) Low VCE(sat).VCE(sat) = 0.15V (Typ.)2.3+0.26.50.2-0.1C0.5(Ic / IB =1A / 0.2A)5.1+0.20.50.1-0.12) High breakdown voltage.BVCEO = 400V3) Fast switching.0.650.10.75tf 1.0s (Ic = 0.8A)0.90.50.12.30.2 2.30.21.00.2 S

High-Frequency Amplifier Transistor (20V, 50mA, 1.5GHz) 2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K Features Dimensions (Unit : mm) 1) High transition frequency. (Typ. fT = 1.5GHz) 2SC56612) Small rbbCc and high gain. (Typ. 6ps) 3) Small NF. (1) BasePackaging specifications and hFE ROHM : VMT3 (2) EmitterType 2SC5661 2SC4725 2SC4082 2SC3837K(3) CollectorPackage

2SC5658 / 2SC4617EB / 2SC46172SC4081UB / 2SC4081U3 / 2SC2412KDatasheetGeneral purpose small signal amplifier(50V, 150mA)lOutlinelParameter Value SC-105AA SOT-416FLVCEO50VIC150mA 2SC5658 2SC4617EB(VMT3) (EMT3F)lFeatures SOT-416 SOT-323FLl1)Low Cob.Cob=2.0pF(Typ.) 2)Complements the 2SA2029/2SC4617 2SC4081UB 2SA1774EB/2SA

2SC5658 / 2SC4617EB / 2SC46172SC4081UB / 2SC4081 / 2SC2412KDatasheetGeneral purpose small signal amplifier(50V, 150mA)lOutlinelParameter Value SC-105AA SOT-416FLVCEO50VIC150mA 2SC5658 2SC4617EB(VMT3) (EMT3F)lFeatures SOT-416 SOT-323FLl1)Low Cob.Cob=2.0pF(Typ.) 2)Complements the 2SA2029/2SC4617 2SC4081UB 2SA1774EB/2SA17

High-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz) 2SC5662 / 2SC4726 /2SC4083 / 2SC3838K Features Dimensions (Unit : mm) 1) High transition frequency. (Typ. fT= 3.2GHz) 2SC56621.22) Small rbbCc and high gain. (Typ. 4ps) 0.323) Small NF. (3)(1)(2)0.220.130.4 0.4 0.5(1) Base0.8(2) Emitter(3) CollectorROHM : VMT3Packaging specifications and

IRFPC50LC, SiHFPC50LCVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 600 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 0.60 Enhanced 30 V VGS RatingRoHS* Reduced Ciss, Coss, CrssCOMPLIANTQg (Max.) (nC) 84 Isolated Central Mounting HoleQgs (nC) 18 Dynamic dV/dt RatingQgd (nC) 36 Repetitiv

IRFPC50, SiHFPC50Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.60RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 140 COMPLIANT Fast SwitchingQgs (nC) 20 Ease of ParallelingQgd (nC) 69 Simple Drive RequirementsConfiguration Single Complia

IRFPC50LC, SiHFPC50LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 600 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 0.60 Enhanced 30 V VGS RatingRoHS* Reduced Ciss, Coss, CrssCOMPLIANTQg (Max.) (nC) 84 Isolated Central Mounting HoleQgs (nC) 18 Dynamic dV/dt RatingQgd (nC) 36 Repetitive

IRFPC50, SiHFPC50Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.60RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 140 COMPLIANT Fast SwitchingQgs (nC) 20 Ease of ParallelingQgd (nC) 69 Simple Drive RequirementsConfiguration Single Complia

IRFPC50LC, SiHFPC50LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 600 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 0.60 Enhanced 30 V VGS RatingRoHS* Reduced Ciss, Coss, CrssCOMPLIANTQg (Max.) (nC) 84 Isolated Central Mounting HoleQgs (nC) 18 Dynamic dV/dt RatingQgd (nC) 36 Repetitive

IRFPC50A, SiHFPC50AVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600AvailableRequirementRDS(on) ()VGS = 10 V 0.58RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 70RuggednessQgs (nC) 19 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 28 and CurrentConfigur

IRFPC50A, SiHFPC50AVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600AvailableRequirementRDS(on) ()VGS = 10 V 0.58RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 70RuggednessQgs (nC) 19 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 28 and CurrentConfigur

IRFPC50A, SiHFPC50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600Requirement AvailableRDS(on) ()VGS = 10 V 0.58 Improved Gate, Avalanche and Dynamic dV/dt RoHS*COMPLIANTQg (Max.) (nC) 70RuggednessQgs (nC) 19 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 28 Effec

UMC5N DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS Features Epitaxial Planar Die Construction Surface Mount Package Suited for Automated Assembly Simplifies Circuit Design and Reduces Board Space Lead Free/RoHS Compliant (Note 1) "Green" Device (Note 2) Mechanical Data SOT-353 Case: SOT-353 (1)(3) (2)3 2 1 Case Material: Molded Plastic. UL Flamm

Low Noise TransistorsBC549B,CNPN SiliconBC550B,CMAXIMUM RATINGSRating Symbol BC549 BC550 UnitCollectorEmitter Voltage VCEO 30 45 VdcCollectorBase Voltage VCBO 30 50 VdcEmitterBase Voltage VEBO 5.0 VdcCollector Current Continuous IC 100 mAdc1Total Device Dissipation @ TA = 25C PD 625 mW2Derate above 25C 5.0 mW/C 3Total Device Dissipation @ TC = 25

BC53-16PA PNP MEDIUM POWER TRANSISTOR Features Mechanical Data BVCEO > -80V Case: U-DFN2020-3 (Type B) IC = -1A High Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound. ICM = -2A Peak Pulse Current UL Flammability Rating 94V-0 520mW Power Dissipation Moisture Sensitivity: Level 1 per J-STD-020 Low Saturation Vol

SIGC54T60R3E IGBT3 Chip Features: This chip is used for: 600V Trench & Field Stop technology power moduleC low VCE(sat) low turn-off losses Applications: short tail current drives positive temperature coefficient G easy parallelingE Chip Type VCE IC Die Size PackageSIGC54T60R3E 600V 100A 5.97 x 8.97 mm2 sawn on foil Mechanical Parame

IPC50N04S5L-5R5OptiMOS-5 Power-TransistorProduct Summary VDS 40 V RDS(on),max 5.5 mW ID 50 A FeaturesPG-TDSON-8-33 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanch

IPC50N04S5-5R8OptiMOS-5 Power-TransistorProduct Summary VDS 40 V RDS(on),max 5.8 mW ID 50 A FeaturesPG-TDSON-8-33 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanch

IGC50T120T6RL IGBT4 Low Power Chip FEATURES: 1200V Trench + Field Stop technology This chip is used for:C low switching losses low / medium power modules positive temperature coefficient easy paralleling Applications: G low / medium power drives E Chip Type VCE ICn Die Size Package IGC50T120T6RL 1200V 50A 7.25 x 6.84 mm2 sawn on foil MECHANICA

IRFPC50, SiHFPC50Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.60RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 140 COMPLIANT Fast SwitchingQgs (nC) 20 Ease of ParallelingQgd (nC) 69 Simple Drive RequirementsConfiguration Single Complia

SIGC57T120R3LE IGBT3 Chip Features: This chip is used for: 1200V Trench & Field Stop technology power modules C low turn-off losses short tail current Applications: positive temperature coefficient drives easy parallelingG E Chip Type VCE IC Die Size PackageSIGC57T120R3LE 1200V 50A 7.6 x 7.53 mm2 sawn on foil Mechanical Parameters Raster

SIGC57T120R3LE IGBT3 Power Chip Features: This chip is used for: 1200V Trench & Field Stop technology power modules C low turn-off losses short tail current Applications: positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package SIGC57T120R3LE 1200V 50A 7.6 x 7.53 mm2 sawn on foil Mechanical Parameters

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IGC54T65R3QEHigh Speed IGBT3 ChipFeatures: Recommended for: 650V Trench & Field Stop technology discrete components andmodules high speed switching series thirdCgeneration low VCE(sat) Applications: low EMI uninterruptible power supplies low turn-off losses welding convertersG positive temperature coefficient converters with high switchi

SIGC57T120R3 IGBT3 Chip FEATURES: This chip is used for: C 1200V Trench + Field Stop technology low turn-off losses power module short tail current positive temperature coefficient Applications: easy paralleling G drives E Chip Type VCE ICn Die Size Package Ordering Code Q67050-SIGC57T120R3 1200V 50A 7.6 x 7.53 mm2 sawn on foil A4106-A001

IGC54T65T8RMIGBT3 Chip Medium PowerFeatures: Recommended for: 650V Trench & Field Stop technology power modulesC high short circuit capability, self limitingshort circuit current positive temperature coefficient Applications: easy paralleling drivesG Qualified according to JEDEC for targetEapplicationsChip Type VCE ICn Die Size PackageIGC54T65T

IGC50T120T8RQHigh Speed IGBT in Trench and Fieldstop TechnologyFeatures: Recommended for: 1200V Trench + Field stop technology power modulesC low switching losses positive temperature coefficientApplications: easy paralleling high frequency drivesG UPSE Welding Solar invertersChip Type VCE ICn1) Die Size PackageIGC50T120T8RQ 1200V 50A

IGC50T120T8RLIGBT4 Low Power ChipFeatures: Recommended for: 1200V Trench & Field stop technology low / medium power modules C low switching losses positive temperature coefficientApplications: easy paralleling low / medium power drives Qualified according to JEDEC for targetGapplications EChip Type VCE ICn1 ) Die Size PackageIGC50T120T8RL 1200V 50

SIGC54T65R3E IGBT3 Chip Features: Recommended for: 650V Trench & Field Stop technology power modules low VCE(sat) C low turn-off losses Applications: short tail current drives positive temperature coefficient easy parallelingGE Qualified according to JEDEC for target applications Chip Type VCE ICn1 ) Die Size PackageSIGC54T65R3E

BSC500N20NS3 GOptiMOSTM3 Power-TransistorProduct Summary FeaturesVDS 200 V N-channel, normal levelRDS(on),max 50 mW Excellent gate charge x R product (FOM)DS(on)ID 24 A Very low on-resistance RDS(on) Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Halogen-free according to IEC61249-2-21 Ideal for

PD -95186IRG4PC50UPbFUltraFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C UltraFast: Optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighterVCE(on) typ. = 1.65VG parameter distribution and higher efficiency than Generation 3@VGE = 15V, IC = 27AE Industr

SIGC54T60R3E IGBT3 Chip Features: This chip is used for: 600V Trench & Field Stop technology power moduleC low VCE(sat) low turn-off losses Applications: short tail current drives positive temperature coefficient G easy parallelingE Chip Type VCE IC Die Size PackageSIGC54T60R3E 600V 100A 5.97 x 8.97 mm2 sawn on foil Mechanical Parame

SIGC57T120R3E IGBT3 Power Chip Features: This chip is used for: 1200V Trench & Field Stop technology power modules C low turn-off losses short tail current Applications: positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package SIGC57T120R3E 1200V 50A 7.6 x 7.53 mm2 sawn on foil Mechanical Parameters

PD - 95398IRG4PC50FPbFFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighterVCE(on) typ. = 1.45VG parameter distribution and higher efficiency than Generation 3@VGE = 15V, IC = 39AE Industry standard

PD -95185IRG4PC50UDPbF UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeaturesC UltraFast: Optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighterVCE(on) typ. = 1.65V parameter distribution and higher efficiency thanG Generation

IXKH 35N60C5 Advanced Technical InformationIXKP 35N60C5ID25 = 35 ACoolMOS 1) Power MOSFETVDSS = 600 VRDS(on) max = 0.1 N-Channel Enhancement ModeLow RDSon, High VDSS MOSFETUltra low gate chargeDTO-247 AD (IXKH)GGD D(TAB)SSTO-220 AB (IXKP)GDSFeaturesMOSFET fast CoolMOS 1) power MOSFETSymbol Conditions Maximum Ratings4th generationV

FMD 15-06KC5Advanced Technical InformationFDM 15-06KC5ID25 = 15 ACoolMOS 1) Power MOSFETVDSS = 600 Vwith HiPerDyn FREDRDS(on) max = 0.165 Buck and Boost Topologies3 3ISOPLUS i4Electrically isolated back surfaceT2500 V electrical isolation5DN-Channel Enhancement Mode144Low RDSon, high VDSS MOSFET isolated backE72873 5Ultra low gate char

IXKP 13N60C5MID25 = 6.5 ACoolMOS 1) Power MOSFETVDSS = 600 VRDS(on) max = 0.3 Fully isolated packageN-Channel Enhancement ModeLow RDSon, High VDSS MOSFETDTO-220 FPUltra low gate chargeGDGSPreliminary dataSFeaturesMOSFET fast CoolMOS 1) power MOSFETSymbol Conditions Maximum Ratings4th generationVDSS TVJ = 25C 600 V - High blocking capabi

FMD 47-06KC5Advanced Technical InformationFDM 47-06KC5ID25 = 47 ACoolMOS 1) Pow er MOSFETVDSS = 600 Vwith HiPerDyn FREDRDS(on) max = 0.045 Buck and Boost Topologies3 3ISOPLUS i4Electrically isolated back surface T2500 V electrical isolation5DN-Channel Enhancement Mode144Low RDSon, high VDSS MOSFET isolated backE72873 5Ultra low gate charg

IXKC 23N60C5ID25 = 23 ACoolMOS 1) Power MOSFETVDSS = 600 VRDS(on) max = 0.1 Electrically isolated back surface2500 V electrical isolation N-Channel Enhancement ModeDISOPLUS220TMLow RDSon, high VDSS MOSFETUltra low gate chargeGGD Sisolated backS surfaceE72873Preliminary dataFeaturesMOSFET Silicon chip on Direct-Copper-Bond Symbol Conditions

CPC5603N-Channel Depletion Mode FETParameter Rating Units DescriptionDrain-to-Source Voltage - VDS 415 VThe CPC5603 is an N-channel, depletion mode Field Max On-Resistance - RDS(on) 14Effect Transistor (FET) that utilizes Clares proprietary Max Power 2.5 Wthird-generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET pe

CPC5603N-Channel Depletion Mode FETParameter Rating Units DescriptionDrain-to-Source Voltage - VDS 415 VThe CPC5603 is an N-channel, depletion mode Field Max On-Resistance - RDS(on) 14Effect Transistor (FET) that utilizes Clares proprietary Max Power 2.5 Wthird-generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET pe

CPC5602N-Channel Depletion Mode FETParameter Rating Units DescriptionDrain-to-Source Voltage - VDS 350 V The CPC5602 is an N-channel depletion mode Field Effect Transistor (FET) that utilizes Clares proprietary Max On-Resistance - RDS(on) 14third generation vertical DMOS process. The third Max Power 2.5 Wgeneration process realizes world class, high voltage MOSFET perf

CPC5602N-Channel Depletion Mode FETParameter Rating Units DescriptionDrain-to-Source Voltage - VDS 350 V The CPC5602 is an N-channel depletion mode Field Effect Transistor (FET) that utilizes Clares proprietary Max On-Resistance - RDS(on) 14third generation vertical DMOS process. The third Max Power 2.5 Wgeneration process realizes world class, high voltage MOSFET perf

IXKP 20N60C5MID25 = 7.6 ACoolMOS 1) Power MOSFETVDSS = 600 VRDS(on) max = 0.2 Fully isolated packageN-Channel Enhancement ModeLow RDSon, High VDSS MOSFETDTO-220 FPUltra low gate chargeGDGSPreliminary dataSFeaturesMOSFET fast CoolMOS 1) power MOSFETSymbol Conditions Maximum Ratings4th generationVDSS TVJ = 25C 600 V - High blocking capabi

IXKH 70N60C5ID25 = 70 ACoolMOS 1) Power MOSFETVDSS = 600 VRDS(on) max = 0.045 N-Channel Enhancement ModeLow RDSon, High VDSS MOSFETUltra low gate chargeDTO-247 AD (IXKH)GGD D(TAB)SSFeaturesMOSFET fast CoolMOS 1) power MOSFETSymbol Conditions Maximum Ratings4th generationVDSS TVJ = 25C 600 V - High blocking capability VGS 20 V - Low

BC546A/B/CMCCMicro Commercial C omponentsTMBC547A/B/C20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933BC548A/B/CFax: (818) 701-4939FeaturesNPN Silicon Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)Amplifier Transistor Through Hole Package 150 C Junction Tempe

MCAC50N10YElectrical Characteristics @ 25C (Unless Otherwise Specified)Parameter Symbol Test Conditions Min Typ Max UnitStatic CharacteristicsV(BR)DSS VGS=0V, ID=250ADrain-Source Breakdown Voltage 100 VIGSS VDS=0V, VGS =20VGate-Source Leakage Current 100 nAIDSS VDS=80V, VGS=0VZero Gate Voltage Drain Current 1 AVGS(th) VDS=VGS, ID=250A1 2 3 VGate-Threshold

MCAC50N06YElectrical Characteristics @ 25C (Unless Otherwise Specified)Parameter Symbol Test Conditions Min Typ Max UnitStatic CharacteristicsV(BR)DSS VGS=0V, ID=250ADrain-Source Breakdown Voltage 60 VIGSS VDS=0V, VGS =20VGate-Source Leakage Current 100 nAIDSS VDS=48V, VGS=0V, TJ=25CZero Gate Voltage Drain Current 1 AVGS(th) VDS=VGS, ID=250AGate-Threshol

EMC2DXV5T1G,EMC3DXV5T1G,EMC4DXV5T1G,EMC5DXV5T1GDual Commonhttp://onsemi.comBase-Collector Bias312Resistor TransistorsR1R2NPN and PNP Silicon Surface MountTransistors with Monolithic BiasQ2R2Resistor NetworkQ1R1The BRT (Bias Resistor Transistor) contains a single transistor witha monolithic bias network consisting of two resistors; a series base45resis

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NTMFS4C55NPower MOSFET30 V, 78 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseswww.onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXApplications3.4 mW @ 10 V CPU Power Delive

February 2002 FDC5614P 60V P-Channel Logic Level PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchilds high 3 A, 60 V. RDS(ON) = 0.105 @ VGS = 10 V voltage PowerTrench process. It has been optimized for RDS(ON) = 0.135 @ VGS = 4.5 V power management applications. Fast switching speed Applic

Ordering number : EN6913B2SA2040/2SC5707Bipolar Transistorhttp://onsemi.com(-)50V, (-)8A, Low VCE(sat), (PNP)NPN Single TP/TP-FAApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, flashFeatures Adoption of FBET and MBIT processes Large current capacitance Low collector-to-emitter saturation voltage High-speed switching High al

Ordering number : EN6913B2SA2040/2SC5707Bipolar Transistorhttp://onsemi.com(-)50V, (-)8A, Low VCE(sat), (PNP)NPN Single TP/TP-FAApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, flashFeatures Adoption of FBET and MBIT processes Large current capacitance Low collector-to-emitter saturation voltage High-speed switching High al

Ordering number : ENA1077A2SC5231ARF Transistorhttp://onsemi.com10V, 70mA, fT=7GHz, NPN Single SMCPFeatures Low-noise : NF=1.0dB typ (f=1GHz) High gain 2 : S21e =12dB typ (f=1GHz) High cut-off frequency : fT=7GHz typ Ultrasmall-sized package permitting applied sets to be made small and slimSpecificationsAbsolute Maximum Ratings at Ta=25CParamete

Ordering number : EN6309D2SA2016/2SC5569Bipolar Transistorhttp://onsemi.com(-)50V, (-)7A, Low VCE(sat), (PNP)NPN Single PCPApplicaitons Relay drivers, lamp drivers, motor drivers, flashFeatures Adoption of FBET and MBIT processes Large current capacity Low collector-to-emitter saturation voltage High-speed switching Ultrasmall package facilitales mini

Ordering number : ENA1063A2SC5227ARF Transistorhttp://onsemi.com10V, 70mA, fT=7GHz, NPN Single CPFeatures Low-noise : NF=1.0dB typ (f=1GHz) High gain 2 : S21e =12dB typ (f=1GHz) High cut-off frequency : fT=7GHz typSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VCBO 20 VCollector-t

Ordering number : ENA1080A2SC5415ARF Transistorhttp://onsemi.com12V, 100mA, fT=6.7GHz, NPN Single PCPFeatures High gain 2 : S21e =9dB typ (f=1GHz) High cut-off frequency : fT=6.7GHz typSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VCBO 20 VCollector-to-Emitter Voltage VCEO 12 VEmitter-

Ordering number : ENA1092A2SC5536ARF Transistorhttp://onsemi.com12V, 50mA, fT=1.7GHz, NPN Single SSFPFeatures Low-noise : NF=1.8dB typ (f=150MHz) High gain S21e =16dB typ (f=150MHz) : 2 Ultrasmall, slim flat-lead package (1.4mm0.8mm0.6mm) Halogen free complianceSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings