FMC6TransistorsTransistorsIMD1(94S-830-AC115E)

NTMFS5C628NLPower MOSFET60 V, 2.4 mW, 150 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)2.4 mW @ 10 V60

NTMFS5C604NLPower MOSFET60 V, 1.2 mW, 287 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)1.2 mW @ 10 V60

Datasheet 78m, 600V, Super Junction N-Channel Power MOSFET SRC60R078B General Description Symbol The Sanrise SRC60R078B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

MOSFET Power, Single,N-Channel60 V, 1.6 mW, 230 ANTMFS5C612NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX60 V 1.6 mW @ 10 V 230 AMAXIMUM RATINGS (TJ = 25C unless otherw

NTMFS5C646NLPower MOSFET60 V, 4.7 mW, 93 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAX4.7 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unles

Datasheet 90m, 600V, Super Junction N-Channel Power MOSFET SRC60R090B General Description Symbol The Sanrise SRC60R090B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

2SC684

NTMFD5C650NLMOSFET Power, Dual,N-Channel60 V, 4.2 mW, 111 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS4.2 mW @ 10 V60 VCompliant111 A5.8 mW @ 4.5 V

MOSFET Power, Single,N-Channel60 V, 10.7 mW, 50 ANTMFS5C673NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant60 V 10.7 mW @ 10 V 50 AMAXIMUM RATINGS (TJ = 25C unless other

NTMFS5C645NLPower MOSFET60 V, 4.0 mW, 100 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)4.0 mW @ 10 V60

NTMFS5C646NLPower MOSFET60 V, 4.7 mW, 93 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAX4.7 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unles

NTMFD5C674NLMOSFET Dual, N-Channel60 V, 14.4 mW, 42 AFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant14.4 mW @ 10 V60 V42 AMAXIMUM RATINGS (TJ = 2

MCAC60N08YElectrical Characteristics @ 25C (Unless Otherwise Specified)Parameter Symbol Test Conditions Min Typ Max UnitStatic CharacteristicsV(BR)DSS VGS=0V, ID=250ADrain-Source Breakdown Voltage 80 VIGSS VDS=0V, VGS =20VGate-Source Leakage Current 100 nAIDSS VDS=64V, VGS=0VZero Gate Voltage Drain Current 1 AVGS(th) VDS=VGS, ID=250AGate-Threshold Voltage 2

NTMFS5C670NLPower MOSFET60 V, 6.1 mW, 71 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)6.1 mW @ 10 V60 V

NTMFS5C612NLPower MOSFET60 V, 1.5 mW, 235 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses NTMFS5C612NLWF - Wettable Flank Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compl

MOSFET Power, Single,N-Channel60 V, 1.2 mW, 287 ANTMFS5C604NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant1.2 mW @ 10 V60 V287 A1.7 mW @ 4.5 VMAXIMUM RATINGS (TJ =

NTMFS5C609NLPower MOSFET60 V, 1.36 mW, 250 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAX1.36 mW @ 10 VMAXIMUM RATINGS (TJ = 25C un

NTMFS5C673NLPower MOSFET60 V, 9.2 mW, 50 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)9.2 mW @ 10 V60 V

NVD5C648NLMOSFET Power, SingleN-Channel60 V, 4.1 mW, 89 AFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) ID AEC-Q101 Qualified and PPAP Capable4.1 mW @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS60 V 89 ACompliant5.7 mW @ 4.5 VMAXIMUM RATINGS (TJ

NTMFS5C645NLPower MOSFET60 V, 4.0 mW, 100 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)4.0 mW @ 10 V60

NTMFS5C628NMOSFET - Power, SingleN-Channel60 V, 3.0 mW, 150 AFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAX60 V 3.0 mW @ 10 V 150 AMAXIMUM RATINGS (TJ = 25C unless otherwis

FreescaleAO6414/ MC6414N-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)92 @ VGS = 10V3.4 Low thermal impedance 60107 @ VGS = 4.5V3.1 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAX

MOSFET Power, Single,N-Channel60 V, 7.0 mW, 71 ANTMFS5C670NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant60 V 7.0 mW @ 10 V 71 AMAXIMUM RATINGS (TJ = 25C unless otherwis

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC635/DHigh Current TransistorsBC635NPN SiliconBC637BC639COLLECTOR23BASE1EMITTER1MAXIMUM RATINGS23BC BC BC635 637 639Rating Symbol UnitCASE 2904, STYLE 14TO92 (TO226AA)CollectorEmitter Voltage VCEO 45 60 80 VdcCollectorBase Voltage VCBO 45 60 80 VdcEmitterBase Voltage

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC618/DDarlington TransistorsNPN SiliconBC618COLLECTOR 1BASE2EMITTER 3123MAXIMUM RATINGSCASE 2904, STYLE 17Rating Symbol Value UnitTO92 (TO226AA)CollectorEmitter Voltage VCEO 55 VdcCollectorBase Voltage VCBO 80 VdcEmitterBase Voltage VEBO 12 VdcCollector Current Continuous I

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC636/DHigh Current TransistorsBC636PNP SiliconBC638COLLECTORBC64023BASE1EMITTER1MAXIMUM RATINGS23BC BC BC636 638 640Rating Symbol UnitCASE 2904, STYLE 14TO92 (TO226AA)CollectorEmitter Voltage VCEO 45 60 80 VdcCollectorBase Voltage VCBO 45 60 80 VdcEmitt

PD - 95568IRG4PC60UPbFUltraFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C UltraFast: Optimized for high operatingVCES = 600V frequencies up to 50 kHz in hard switching, >200 kHz in resonant mode. Generation 4 IGBT design provides tighterVCE(on) typ. = 1.6VG parameter distribution and higher efficiency. Industry standard TO-247AC package.@VGE = 15

PD - 9.1234IRFPC60LCHEXFET Power MOSFETUltra Low Gate ChargeReduced Gate Drive RequirementEnhanced 30V Vgs Rating VDSS = 600VReduced Ciss, Coss, CrssIsolated Central Mounting HoleRDS(on) = 0.40Dynamic dv/dt RatedRepetitive Avalanche RatedID = 16ADescriptionThis new series of Low Charge HEXFET Power MOSFETs achieve significantlylower gate charge over conventional

PD - 94405IRG4CC60FBIRG4CC60FB IGBT Die in Wafer FormC600 VSize 6Fast SpeedG6" WaferEElectrical Characteristics ( Wafer Form )Parameter Description Guaranteed (Min/Max) Test ConditionsVCE (on) Collector-to-Emitter Saturation Voltage 0.8V Min., 1.3V Max. IC = 10A, TJ = 25C, VGE = 15VV(BR)CES Colletor-to-Emitter Breakdown Voltage 600V Min. TJ = 25C, ICES = 250A, VG

PD - 94442AIRG4PC60FFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C Fast: Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighterVCE(on) typ. = 1.50VG parameter distribution and higher efficiency. Industry standard TO-247AC package.@VGE = 15V, IC = 60A

PD - 99438IRFPC60LC-PHEXFET Power MOSFETD Ultra Low Gate ChargeVDSS = 600V Reduced Gate Drive Requirement Enhanced 30V Vgs RatingRDS(on) = 0.40 Reduced Ciss, Coss, CrssG Isolated Central Mounting Hole Dynamic dv/dt Rated ID = 16AS Repetitive Avalanche RatedDescriptionThis new series of Surface Mountable Low Charge HEXFET Power MOSFETsachieve significantly

PD - 94440IRG4PC60F-PFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORCFeaturesFeaturesFeaturesFeaturesFeaturesVCES = 600V Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).VCE(on) typ. = 1.50VG Generation 4 IGBT design provides tighter parameter distribution and higher efficiency.@VGE = 15V, IC = 60A

PD - 94441IRG4PC60U-PINSULATED GATE BIPOLAR TRANSISTORUltraFast Speed IGBTFeatures C UltraFast: Optimized for high operating frequencies up to 50 kHz in hard switching andVCES = 600V >200 kHz in resonant mode. Application in UPS, Welding and High Current powerVCE(on) typ. = 1.6V supply. G Generation 4 IGBT design provides tighter parameter distribution and hig

PD- 96003BIRC630PbF Lead-Freewww.irf.com 12/10/05IRC630PbF2 www.irf.comIRC630PbFwww.irf.com 3IRC630PbF4 www.irf.comIRC630PbFwww.irf.com 5IRC630PbF6 www.irf.comIRC630PbFwww.irf.com 7IRC630PbF8 www.irf.comIRC630PbFHexsenseTO-220 5L Package Outline ( Dimensions are shown in millimeters (inches)Hexsense TO-220 5L Part Marking InformationEXAMP

PD - 94878IRFPC60LCPbF Lead-Free12/9/03Document Number: 91244 www.vishay.com1IRFPC60LCPbFDocument Number: 91244 www.vishay.com2IRFPC60LCPbFDocument Number: 91244 www.vishay.com3IRFPC60LCPbFDocument Number: 91244 www.vishay.com4IRFPC60LCPbFDocument Number: 91244 www.vishay.com5IRFPC60LCPbFDocument Number: 91244 www.vishay.com6IRFPC60LCPbFDocum

PD - 94441IRG4PC60U-PINSULATED GATE BIPOLAR TRANSISTORUltraFast Speed IGBTFeatures C UltraFast: Optimized for high operating frequencies up to 50 kHz in hard switching andVCES = 600V >200 kHz in resonant mode. Application in UPS, Welding and High Current powerVCE(on) typ. = 1.6V supply. G Generation 4 IGBT design provides tighter parameter distribution and hig

PD - 9.1234IRFPC60LCHEXFET Power MOSFETUltra Low Gate ChargeReduced Gate Drive RequirementEnhanced 30V Vgs Rating VDSS = 600VReduced Ciss, Coss, CrssIsolated Central Mounting HoleRDS(on) = 0.40Dynamic dv/dt RatedRepetitive Avalanche RatedID = 16ADescriptionThis new series of Low Charge HEXFET Power MOSFETs achieve significantlylower gate charge over conventional

PD - 94406IRG4CC60UBIRG4CC60UB IGBT Die in Wafer FormC600 VSize 6Fast SpeedG6" WaferEElectrical Characteristics ( Wafer Form )Parameter Description Guaranteed (Min/Max) Test ConditionsVCE (on) Collector-to-Emitter Saturation Voltage 0.8V Min., 1.9V Max. IC = 10A, TJ = 25C, VGE = 15VV(BR)CES Colletor-to-Emitter Breakdown Voltage 600V Min. TJ = 25C, ICES = 250A, VG

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BC635; BC637; BC639NPN medium power transistorsProduct specification 2001 Oct 10Supersedes data of 1999 Apr 23Philips Semiconductors Product specificationNPN medium power transistors BC635; BC637; BC639FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 80 V).1 base2 collectorAPPLIC

BC635; BCP54; BCX5445 V, 1 A NPN medium power transistorsRev. 07 4 June 2007 Product data sheet1. Product profile1.1 General descriptionNPN medium power transistor series.Table 1. Product overviewType number[1] Package PNP complementNXP JEITA JEDECBC635[2] SOT54 SC-43A TO-92 BC636BCP54 SOT223 SC-73 - BCP51BCX54 SOT89 SC-62 TO-243 BCX51[1] Valid for all available sele

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BC635; BC637; BC639NPN medium power transistors1999 Apr 23Product specificationSupersedes data of 1997 Mar 12Philips Semiconductors Product specificationNPN medium power transistors BC635; BC637; BC639FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 80 V).1 base2 collectorAPPLI

BC637; BCP55; BCX5560 V, 1 A NPN medium power transistorsRev. 07 25 June 2007 Product data sheet1. Product profile1.1 General descriptionNPN medium power transistor series.Table 1. Product overviewType number[1] Package PNP complementNXP JEITA JEDECBC637[2] SOT54 SC-43A TO-92 BC638BCP55 SOT223 SC-73 - BCP52BCX55 SOT89 SC-62 TO-243 BCX52[1] Valid for all available sel

BC640; BCP53; BCX5380 V, 1 A PNP medium power transistorsRev. 08 22 February 2008 Product data sheet1. Product profile1.1 General descriptionPNP medium power transistor series.Table 1. Product overviewType number[1] Package NPN complementNXP JEITA JEDECBC640[2] SOT54 SC-43A TO-92 BC639BCP53 SOT223 SC-73 - BCP56BCX53 SOT89 SC-62 TO-243 BCX56[1] Valid for all available

BC636; BCP51; BCX5145 V, 1 A PNP medium power transistorsRev. 08 22 February 2008 Product data sheet1. Product profile1.1 General descriptionPNP medium power transistor series.Table 1. Product overviewType number[1] Package NPN complementNXP JEITA JEDECBC636[2] SOT54 SC-43A TO-92 BC635BCP51 SOT223 SC-73 - BCP54BCX51 SOT89 SC-62 TO-243 BCX54[1] Valid for all available

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BC618NPN Darlington transistor1999 Apr 23Product specificationSupersedes data of 1997 Jul 04Philips Semiconductors Product specificationNPN Darlington transistor BC618FEATURES PINNING Low current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 55 V)1 emitter High DC current gain.2 base3 collector

BC639; BCP56; BCX5680 V, 1 A NPN medium power transistorsRev. 08 22 June 2007 Product data sheet1. Product profile1.1 General descriptionNPN medium power transistor series.Table 1. Product overviewType number[1] Package PNP complementNXP JEITA JEDECBC639[2] SOT54 SC-43A TO-92 BC640BCP56 SOT223 SC-73 - BCP53BCX56 SOT89 SC-62 TO-243 BCX53[1] Valid for all available sel

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BC636; BC638; BC640PNP medium power transistors1999 Apr 23Product specificationSupersedes data of 1997 Mar 07Philips Semiconductors Product specificationPNP medium power transistors BC636; BC638; BC640FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 80 V).1 base2 collectorAPPLI

STP9NC65STP9NC65FPN-CHANNEL 650V - 0.75 - 8A TO-220/TO-220FPPowerMeshII MOSFETTYPE VDSS RDS(on) IDSTP9NC65 650 V

STGB19NC60HDT4, STGF19NC60HD,STGP19NC60HD, STGW19NC60HD19 A, 600 V, very fast IGBT with ultrafast diodeDatasheet - production dataFeaturesTAB Low on-voltage drop (VCE(sat)) Very soft ultrafast recovery anti-parallel diode331 21ApplicationsDPAKTO-220FPTAB High frequency motor drives SMPS and PFC in both hard switch and resonant topologies32 3

STGB10NC60KD, STGD10NC60KDSTGF10NC60KD, STGP10NC60KD10 A, 600 V short-circuit rugged IGBTFeaturesTABTAB Lower on voltage drop (VCE(sat))3 Lower CRES / CIES ratio (no cross-conduction 131susceptibility)DPAK Very soft ultra fast recovery antiparallel diode D2PAKTAB Short-circuit withstand time 10sDescriptionThis IGBT utilizes the advanced PowerM

STGW19NC60WDSTGP19NC60WDN-channel 600V - 19A - TO-220 - TO-247Ultra fast PowerMESH IGBTFeaturesVCE(sat) IC VCESType@100C(max)@25CSTGP19NC60WD 600V

STP4NC60A - STP4NC60AFPSTB4NC60A-1N-CHANNEL 600V - 1.8 - 4.2A TO-220/TO-220FP/I2PAKPowerMeshII MOSFETTYPE VDSS RDS(on) IDSTP4NC60A 600V

STGB7NC60HD, STGF7NC60HD, STGP7NC60HDN-channel 14 A, 600 V, very fast IGBT with Ultrafast diodeDatasheet - production dataFeaturesTABTAB Low on-voltage drop (VCE(sat)) Off losses include tail current33 1 Losses include diode recovery energy 21 High frequency operation up to 70 kHz DPAK (TO-263)IPAK (TO-262) Very soft ultra fast recovery anti para

STGD10NC60SDSTGF10NC60SD10 A, 600 V fast IGBTFeatures Optimized performance for medium operating frequencies up to 5 kHz in hard switching Low on-voltage drop (VCE(sat)) Very soft ultra fast antiparallel diode3321Application1 Motor driveDPAKTO-220FPDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-of

STGW40NC60VN-CHANNEL 50A - 600V - TO-247Very Fast PowerMESH IGBTTable 1: General Features Figure 1: PackageTYPE VCES VCE(sat) (Max) IC @25C @100CSTGW40NC60V 600 V

STGBL6NC60DI, STGDL6NC60DISTGFL6NC60DI, STGPL6NC60DI6 A, 600 V hyper fast IGBTFeatures Low CRES / CIES ratio (no cross-conduction susceptibility)3 Very high frequency operation32211 Very soft ultrafast recovery antiparallel diodeTO-220FP TO-220Applications High frequency inverters33 SMPS and PFC (hard switching too)11 High frequency

STGF30NC60SSTGP30NC60S, STGWF30NC60S30 A, 600 V, fast IGBTFeaturesTAB Optimized performance for medium operating frequencies up to 5 kHz in hard switching Low on-voltage drop (VCE(sat))332 High current capability 211TO-220 TO-220FPApplication1113Motor drive21TO-3PFDescriptionThis device utilizes the advanced PowerMESHTM process result

STGB30NC60KSTGP30NC60K30 A - 600 V - short circuit rugged IGBTFeatures Low on-voltage drop (VCE(sat)) Low Cres / Cies ratio (no cross conduction susceptibility) Short circuit withstand time 10 s3 32Applications 11DPAKTO-220 High frequency inverters Motor driversDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an

STGB14NC60KDSTGF14NC60KD, STGP14NC60KD14 A, 600 V - short-circuit rugged IGBTFeaturesTAB TAB2 Short circuit withstand time 10s. Low on-voltage drop (VCE(sat))3 Low Cres / Cies ratio (no cross conduction 3121susceptibility)DPAKTO-220 Switching losses include diode recovery energy Very soft ultra fast recovery antiparallel diode321App

STGP7NC60HDSTGF7NC60HD - STGB7NC60HDN-CHANNEL 14A - 600V - TO-220/TO-220FP/DPAKVery Fast PowerMESH IGBTTable 1: General Features Figure 1: PackageTYPE VCES VCE(sat) (Max) IC @25C @100CSTGP7NC60HD 600 V

STGW40NC60W40 A - 600 V - ultra fast IGBTFeatures Low CRES / CIES ratio (no cross conduction susceptibility) High frequency operationApplications321 High frequency inverters, UPSTO-247 Motor drivers HF, SMPS and PFC in both hard switch and resonant topologies Welding Induction heatingFigure 1. Internal schematic diagramDescriptionThis I

STGB8NC60K - STGD8NC60KSTGP8NC60KN-channel 600V - 8A - D2PAK / DPAK / TO-220Short circuit rated PowerMESH IGBTFeaturesICVCE(sat)TypType VCES@25C @100C3STGB8NC60K 600V 2.2V 8A13STGD8NC60K 600V 2.2V 8A 21 DPAKTO-220STGP8NC60K 600V 2.2V 8A Lower on voltage drop (Vcesat)3 Lower CRES / CIES ratio (no cross-conduction 1susceptibility)DPAK

STGB10NC60KD, STGD10NC60KDSTGF10NC60KD, STGP10NC60KD10 A, 600 V short-circuit rugged IGBTFeaturesTABTAB Lower on voltage drop (VCE(sat))3 Lower CRES / CIES ratio (no cross-conduction 131susceptibility)DPAK Very soft ultra fast recovery antiparallel diode D2PAKTAB Short-circuit withstand time 10sDescriptionThis IGBT utilizes the advanced PowerM

STD1NC60N-CHANNEL 600V - 7 - 1.4A - DPAK/IPAKPowerMeshII MOSFETTYPE VDSS RDS(on) IDSTD1NC60 600 V

STGB19NC60HDT4, STGF19NC60HDSTGP19NC60HD, STGW19NC60HD19 A, 600 V, very fast IGBT with Ultrafast diodeFeaturesTABTAB Low on-voltage drop (VCE(sat)) Very soft Ultrafast recovery anti-parallel diode331 21ApplicationsDPAKTO-220 High frequency motor drives SMPS and PFC in both hard switch and resonant topologies332211DescriptionTO-247

STQ1NC60RN-CHANNEL 600V - 12 - 0.3ATO-92PowerMESHII Power MOSFETTYPE VDSS RDS(on) IDSTQ1NC60R 600 V

STGD10NC60SDSTGF10NC60SD10 A, 600 V fast IGBTFeatures Optimized performance for medium operating frequencies up to 5 kHz in hard switching Low on-voltage drop (VCE(sat)) Very soft ultra fast antiparallel diode3321Application1 Motor driveDPAKTO-220FPDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-of

STGWA19NC60HD31 A, 600 V, very fast IGBT with Ultrafast diodeFeatures Low on-voltage drop (VCE(sat)) Very soft Ultrafast recovery anti-parallel diodeApplications32 High frequency motor drives1 SMPS and PFC in both hard switch and TO-247resonant topologiesDescriptionThis device is an ultrafast IGBT. It utilizes the advanced Power MESH process resultin

STGP7NC60H - STGD7NC60HN-CHANNEL 14A - 600V TO-220/DPAKVery Fast PowerMESH IGBTTable 1: General Features Figure 1: PackageTYPE VCES VCE(sat) (Max) IC @25C @100CSTGP7NC60H 600 V

STGBL6NC60D STGPL6NC60D600 V - 6 A hyper fast IGBTDatasheet - production dataFeatures Low CRES / CIES ratio (no cross-conduction TABTABsusceptibility) Very soft ultra fast recovery antiparallel diode33Applications1 21 Very high frequency operation High frequency lamp ballast TO-220DPAK SMPS and PFC (including hard switching)DescriptionThi

STP8NC60STP8NC60FPN-CHANNEL 600V - 0.85 - 7A TO-220/TO-220FPPowerMeshII MOSFETTYPE VDSS RDS(on) IDSTP8NC60 600 V

STGB8NC60K - STGD8NC60KSTGP8NC60KN-channel 600V - 8A - D2PAK / DPAK / TO-220Short circuit rated PowerMESH IGBTFeaturesICVCE(sat)TypType VCES@25C @100C3STGB8NC60K 600V 2.2V 8A13STGD8NC60K 600V 2.2V 8A 21 DPAKTO-220STGP8NC60K 600V 2.2V 8A Lower on voltage drop (Vcesat)3 Lower CRES / CIES ratio (no cross-conduction 1susceptibility)DPAK

STW10NC60STH10NC60FIN-CHANNEL 600V - 0.6 - 10A - TO-247/ISOWATT218PowerMeshII MOSFETTYPE VDSS RDS(on) IDSTW10NC60 600 V

STGB19NC60HDT4, STGF19NC60HDSTGP19NC60HD, STGW19NC60HD19 A, 600 V, very fast IGBT with Ultrafast diodeFeaturesTABTAB Low on-voltage drop (VCE(sat)) Very soft Ultrafast recovery anti-parallel diode331 21ApplicationsDPAKTO-220 High frequency motor drives SMPS and PFC in both hard switch and resonant topologies332211DescriptionTO-247

STGB19NC60KDT4, STGF19NC60KD, STGP19NC60KD 20 A, 600 V short-circuit rugged IGBT Datasheet - production data Features TAB Low on voltage drop (V ) CE(sat) Low C / C ratio (no cross-conduction RES IES31susceptibility) D2 PAK3 Short-circuit withstand time 10 s 21 IGBT co-packaged with ultrafast free-TO-220FPTABwheeling diode Applications

STGB19NC60H, STGP19NC60HSTGW19NC60H19 A - 600 V - very fast IGBTFeatures Low on-voltage drop (VCE(sat)) High frequency operation321Applications3TO-2472 High frequency motor drives 1 SMPS and PFC in both hard switch and TO-220resonant topologies31DPAKDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent t

STE40NC60N-CHANNEL 600V - 0.098 - 40A ISOTOPPowerMeshII MOSFETTYPE VDSS RDS(on) IDSTE40NC60 600V

STGB19NC60HD, STGF19NC60HDSTGP19NC60HD, STGW19NC60HD19 A - 600 V - very fast IGBTFeatures Low on-voltage drop (VCE(sat)) Very soft ultra fast recovery anti-parallel diode33211DPAKApplicationsTO-220 High frequency motor controls SMPS and PFC in both hard switch and resonant topologies33221 1DescriptionTO-247TO-220FPThis IGBT utilize

STGB10NC60KD, STGD10NC60KDSTGF10NC60KD, STGP10NC60KD10 A, 600 V short-circuit rugged IGBTFeaturesTABTAB Lower on voltage drop (VCE(sat))3 Lower CRES / CIES ratio (no cross-conduction 131susceptibility)DPAK Very soft ultra fast recovery antiparallel diode D2PAKTAB Short-circuit withstand time 10sDescriptionThis IGBT utilizes the advanced PowerM

STGB30NC60KSTGP30NC60K30 A - 600 V - short circuit rugged IGBTFeatures Low on-voltage drop (VCE(sat)) Low Cres / Cies ratio (no cross conduction susceptibility) Short circuit withstand time 10 s3 32Applications 11DPAKTO-220 High frequency inverters Motor driversDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an

STGD6NC60H-1N-channel 600 V, 7 A - IPAK Very fast PowerMESH IGBTDatasheet - production dataFeaturesICVCE(sat) TABType VCESmax@25C@100CSTGD6NC60H 600V

STGP7NC60H - STGD7NC60HN-CHANNEL 14A - 600V TO-220/DPAKVery Fast PowerMESH IGBTTable 1: General Features Figure 1: PackageTYPE VCES VCE(sat) (Max) IC @25C @100CSTGP7NC60H 600 V

STGD10NC60HN-channel 10A - 600V - DPAKVery fast PowerMESH IGBTFeaturesVCE(sat) IC VCESType(Max)@ 25C @100CSTGD10NC60H 600V

STGD10NC60SSTGP10NC60S10 A, 600 V fast IGBTFeatures Optimized performance for medium operating frequencies up to 5 kHz in hard switchingTAB Low on-voltage drop (VCE(sat))TABApplication3321 1 Motor driveDPAK TO-220DescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off between switching performance and low

STGE50NC60VD50 A - 600 V very fast IGBTFeatures High current capability High frequency operation Low CRES/CIES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery antiparallel diodeApplicationsISOTOP High frequency inverters SMPS and PFC in both hard switching and resonant topologies UPS Motor driversFigure 1. Internal s

STGW40NC60WD40 A - 600 V - ultra fast IGBTFeatures Low CRES / CIES ratio (no cross conduction susceptibility) IGBT co-packaged with ultra fast free-wheeling diode High frequency operation321TO-247Applications High frequency inverters, UPS Motor drivers HF, SMPS and PFC in both hard switch and resonant topologies WeldingFigure 1. Internal

STGD7NC60HT4 N-channel PowerMESH 600 V, 14 A very fast IGBT Datasheet - production data Features Order code V V max I CES CE(sat) CSTGD7NC60HT4 600 V

STGB19NC60WSTGP19NC60W, STGW19NC60W19 A - 600 V - ultra fast IGBTFeatures High frequency operation Low CRES / CIES ratio (no cross-conduction susceptibility)3132Applications1D2PAK High frequency motor controls, inverters, UPS TO-247 HF, SMPS and PFC in both hard switch and 32resonant topologies 1TO-220DescriptionThis IGBT utilizes the advanc

STGB20NC60V, STGP20NC60V, STGW20NC60V30 A - 600 V - very fast IGBTDatasheet - production dataFeatures High frequency operation up to 50 kHz Lower CRES / CIES ratio (no cross-conduction susceptibility) High current capability3 3221 1ApplicationsTO-247 TO-22031 High frequency inverters UPS, motor driversDPAK HF, SMPS and PFC in both hard

STB4NC60N-CHANNEL 600V - 1.8 - 4.2A D2PAKPowerMeshII MOSFETTYPE VDSS RDS(on) IDSTB4NC60 600V

STD1LNC60N-CHANNEL 600V - 12 - 1A - IPAK/DPAKPowerMESHII MOSFETTYPE VDSS RDS(on) IDSTD1LNC60 600 V

STGF19NC60SDSTGP19NC60SD20 A, 600 V fast IGBT with Ultrafast diodeFeatures Very low on-voltage drop (VCE(sat))TAB Minimum power losses at 5 kHz in hard switching Optimized performance for medium operating frequencies.332211 IGBT co-packaged with Ultrafast freewheeling TO-220FPdiodeTO-220ApplicationMedium frequency motor drivesDescription

STGE50NC60WDN-channel 50A - 600V - ISOTOPUltra fast switching PowerMESH IGBTFeaturesVCE(sat) (Max) IC Type VCES@25C @100CSTGE50NC60WD 600V 2.5V 50A High current capability High frequency operation Low CRES/CIES ratio (no cross-conduction ISOTOPsusceptibility Very soft ultra fast recovery antiparallel diodeDescriptionUsing the latest high voltage

STGB10NC60KD, STGD10NC60KDSTGF10NC60KD, STGP10NC60KD10 A, 600 V short-circuit rugged IGBTFeaturesTABTAB Lower on voltage drop (VCE(sat))3 Lower CRES / CIES ratio (no cross-conduction 131susceptibility)DPAK Very soft ultra fast recovery antiparallel diode D2PAKTAB Short-circuit withstand time 10sDescriptionThis IGBT utilizes the advanced PowerM

STGW40NC60KD600 V, 40 A short-circuit rugged IGBTDatasheet - production dataFeatures Low on-voltage drop (VCE(sat)) Low Cres / Cies ratio (no cross conduction susceptibility) Short-circuit withstand time 10 s3 IGBT co-packaged with ultra fast free-wheeling 2diode1ApplicationsTO-247 High frequency inverters Motor driversFigure 1. Internal sch

STC6NF30VN-channel 30V - 0.020 - 6A - TSSOP82.5V-drive STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) ID

STS1NC60N-CHANNEL 600V - 12 - 0.3A - SO-8PowerMESHII MOSFETTYPE VDSS RDS(on) IDSTS1NC60 600 V

STGB20NC60V - STGP20NC60VSTGW20NC60V30 A - 600 V - very fast IGBTFeatures High frequency operation up to 50 kHz Lower CRES / CIES ratio (no cross-conduction susceptibility)3 High current capability 3221 1ApplicationsTO-247 TO-22031 High frequency inverters UPS, motor drivers DPAK HF, SMPS and PFC in both hard switch and resonant topologi

STS8C6H3LLN-channel 30 V, 0.019 typ., 8 A, P-channel 30 V, 0.024 typ., 6 ASTripFET Power MOSFET in a SO-8 packageDatasheet - preliminary dataFeatures Order code Channel VDS RDS(on) max IDN 0.021 8 ASTS8C6H3LL 30 VP 0.030 5 A4 STripFETV N-channel Power MOSFET1 STripFETVI DeepGATE P-channel Power MOSFETSO-8 RDS(on)* Qg industry benc

BC635SMALL SIGNAL NPN TRANSISTORPRELIMINARY DATAOrdering Code Marking Package / ShipmentBC635 BC635 TO-92 / BulkBC635-AP BC635 TO-92 / Ammopack SILICON EPITAXIAL PLANAR NPNTRANSISTOR TO-92 PACKAGE SUITABLE FORTHROUGH-HOLE PCB ASSEMBLY THE PNP COMPLEMENTARY TYPE ISBC636TO-92 TO-92APPLICATIONS Bulk Ammopack WELL SUITABLE FOR TV AND HOMEAPPLIANCE EQUIPMENT SMA

STW12NC60N-CHANNEL 600V - 0.48 - 12A TO-247PowerMeshII MOSFETTYPE VDSS RDS(on) IDSTW12NC60 600V

STGP10NC60HN-channel 10A - 600V - TO-220Very fast PowerMESH IGBTFeaturesVCE(sat) IC VCESType(Max)@ 25C @100CSTGP10NC60H 600V

STGB19NC60H, STGP19NC60HSTGW19NC60H19 A - 600 V - very fast IGBTFeatures Low on-voltage drop (VCE(sat)) High frequency operation321Applications3TO-2472 High frequency motor drives 1 SMPS and PFC in both hard switch and TO-220resonant topologies31DPAKDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent t

STGB10NC60HD - STGD10NC60HDSTGF10NC60HD - STGP10NC60HD 600 V - 10 A - very fast IGBTFeatures2 Low on-voltage drop (VCE(sat))3 Low CRES / CIES ratio (no cross-conduction 3 11susceptibility)DPAK DPAK Very soft ultra fast recovery antiparallel diodeApplications High frequency motor controls3 32 2 SMPS and PFC in both hard switch and 1 1resonant

STGB14NC60KDT4, STGF14NC60KD, STGP14NC60KD 14 A, 600 V short-circuit rugged IGBT Datasheet - production data Features TAB Low on voltage drop (V ) CE(sat) Low C / C ratio (no cross-conduction res ies31susceptibility) D2 PAK3 Very soft ultrafast recovery antiparallel diode 21 Short-circuit withstand time 10 s TO-220FPTABApplications H

STGB8NC60KD - STGD8NC60KDSTGF8NC60KD - STGP8NC60KD600 V - 8 A - short circuit rugged IGBTFeatures2 Lower on voltage drop (VCE(sat))3 Lower CRES / CIES ratio (no cross-conduction 1susceptibility)32 DPAK1 Very soft ultra fast recovery antiparallel diode TO-220 Short circuit withstand time 10 s2Applications High frequency motor controls 3 32

STGB10NC60K - STGD10NC60KSTGP10NC60KN-channel 600V - 10A - D2PAK / TO-220 / DPAKShort circuit rated PowerMESH IGBTGeneral featuresICVCE(sat)MaxType VCES@25C @100CSTGB10NC60K 600V

STGD6NC60HN-channel 600V - 7A - DPAKVery fast PowerMESH IGBTGeneral featuresICVCE(sat)MaxType VCES@25C @100CSTGD6NC60H 600V

STGBL6NC60DI, STGDL6NC60DISTGFL6NC60DI, STGPL6NC60DI6 A, 600 V hyper fast IGBTFeatures Low CRES / CIES ratio (no cross-conduction susceptibility)3 Very high frequency operation32211 Very soft ultrafast recovery antiparallel diodeTO-220FP TO-220Applications High frequency inverters33 SMPS and PFC (hard switching too)11 High frequency

STGB8NC60KD - STGD8NC60KDSTGF8NC60KD - STGP8NC60KD600 V - 8 A - short circuit rugged IGBTFeatures2 Lower on voltage drop (VCE(sat))3 Lower CRES / CIES ratio (no cross-conduction 1susceptibility)32 DPAK1 Very soft ultra fast recovery antiparallel diode TO-220 Short circuit withstand time 10 s2Applications High frequency motor controls 3 32

STN1HNC60N-CHANNEL 600V - 7 - 0.4A - SOT-223PowerMeshII MOSFETTYPE VDSS RDS(on) IDSTN1HNC60 600 V

STGB19NC60H, STGP19NC60HSTGW19NC60H19 A - 600 V - very fast IGBTFeatures Low on-voltage drop (VCE(sat)) High frequency operation321Applications3TO-2472 High frequency motor drives 1 SMPS and PFC in both hard switch and TO-220resonant topologies31DPAKDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent t

STGB6NC60HD - STGB6NC60HD-1STGF6NC60HD - STGP6NC60HDN-channel 600V - 7A - I2PAK / D2PAK / TO-220 / TO-220FPVery fast PowerMESH IGBTFeaturesICVCE(sat)maxType VCES@25C @100CSTGB6NC60HD 600V

STGBL6NC60DI, STGDL6NC60DISTGFL6NC60DI, STGPL6NC60DI6 A, 600 V hyper fast IGBTFeatures Low CRES / CIES ratio (no cross-conduction susceptibility)3 Very high frequency operation32211 Very soft ultrafast recovery antiparallel diodeTO-220FP TO-220Applications High frequency inverters33 SMPS and PFC (hard switching too)11 High frequency

STGB19NC60SSTGP19NC60S20 A, 600 V fast IGBTFeatures Very low on-voltage drop (VCE(sat)) Minimum power losses at 5 kHz in hard switchingTABTAB Optimized performance for medium operating frequencies.3132Application1D2PAKTO-220Medium frequency motor drivesDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent t

STGW19NC60WDSTGP19NC60WDN-channel 600V - 19A - TO-220 - TO-247Ultra fast PowerMESH IGBTFeaturesVCE(sat) IC VCESType@100C(max)@25CSTGP19NC60WD 600V

STGD10NC60SSTGP10NC60S10 A, 600 V fast IGBTFeatures Optimized performance for medium operating frequencies up to 5 kHz in hard switchingTAB Low on-voltage drop (VCE(sat))TABApplication3321 1 Motor driveDPAK TO-220DescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off between switching performance and low

STGD10NC60SDSTGF10NC60SD10 A, 600 V fast IGBTFeatures Optimized performance for medium operating frequencies up to 5 kHz in hard switching Low on-voltage drop (VCE(sat)) Very soft ultra fast antiparallel diode3321Application1 Motor driveDPAKTO-220FPDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-of

STGB19NC60KSTGP19NC60K20 A - 600 V - short circuit rugged IGBTFeatures Low on-voltage drop (VCE(sat)) Low Cres / Cies ratio (no cross conduction susceptibility) Short circuit withstand time 10 s33 IGBT co-packaged with ultra fast free-wheeling 121diodeD2PAKTO-220Applications High frequency inverters Motor driversDescriptionFigure 1.

STP3NC60STP3NC60FPN-CHANNEL 600V - 3.3 - 3A TO-220/TO-220FPPowerMeshII MOSFETTYPE VDSS RDS(on) IDSTP3NC60 600 V

STGB8NC60K - STGD8NC60KSTGP8NC60KN-channel 600V - 8A - D2PAK / DPAK / TO-220Short circuit rated PowerMESH IGBTFeaturesICVCE(sat)TypType VCES@25C @100C3STGB8NC60K 600V 2.2V 8A13STGD8NC60K 600V 2.2V 8A 21 DPAKTO-220STGP8NC60K 600V 2.2V 8A Lower on voltage drop (Vcesat)3 Lower CRES / CIES ratio (no cross-conduction 1susceptibility)DPAK

STGW50NC60WN-channel 600V - 55A - TO-247Ultra fast switching PowerMESH IGBTFeaturesVCE(sat) IC VCESType(max)@25C @100CSTGW50NC60W 600V

STGB19NC60KDSTGF19NC60KD - STGP19NC60KD20 A - 600 V - short circuit rugged IGBTFeatures Low on-voltage drop (VCE(sat)) Low Cres / Cies ratio (no cross conduction susceptibility)33 Short circuit withstand time 10 s 121 IGBT co-packaged with ultra fast free-wheeling D2PAKTO-220diodeApplications321 High frequency invertersTO-220FP Mot

STGB8NC60KD - STGD8NC60KDSTGF8NC60KD - STGP8NC60KD600 V - 8 A - short circuit rugged IGBTFeatures2 Lower on voltage drop (VCE(sat))3 Lower CRES / CIES ratio (no cross-conduction 1susceptibility)32 DPAK1 Very soft ultra fast recovery antiparallel diode TO-220 Short circuit withstand time 10 s2Applications High frequency motor controls 3 32

STGB10NC60KDT4, STGD10NC60KDT4, STGF10NC60KD, STGP10NC60KD 10 A, 600 V short-circuit rugged IGBT Datasheet - production data Features Lower on voltage drop (V ) CE(sat) Lower C / C ratio (no cross-conduction RES IESsusceptibility) Very soft ultra fast recovery antiparallel diode Short-circuit withstand time 10 s Applications High frequency motor

STGW30NC60VD40 A, 600 V, very fast IGBT with Ultrafast diodeFeatures High current capability High frequency operation up to 50 KHz Very soft ultra fast recovery antiparallel diodeApplications32 High frequency inverters, UPS1 Motor driveTO-247 long leads SMPS and PFC in both hard switch and resonant topologiesDescriptionFigure 1. Internal schemat

STGW19NC60WDSTGP19NC60WDN-channel 600V - 19A - TO-220 - TO-247Ultra fast PowerMESH IGBTFeaturesVCE(sat) IC VCESType@100C(max)@25CSTGP19NC60WD 600V

STGBL6NC60DI, STGDL6NC60DISTGFL6NC60DI, STGPL6NC60DI6 A, 600 V hyper fast IGBTFeatures Low CRES / CIES ratio (no cross-conduction susceptibility)3 Very high frequency operation32211 Very soft ultrafast recovery antiparallel diodeTO-220FP TO-220Applications High frequency inverters33 SMPS and PFC (hard switching too)11 High frequency

STGY50NC60WD50 A, 600 V, ultra fast IGBTFeatures Very high frequency operation Low CRES / CIES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery antiparallel diode3Applications21 Very high frequency inverters, UPSMax247 HF, SMPS and PFC in both hard switch and resonant topologies Motor drivers WeldingFigure 1. Interna

STGF19NC60SDSTGP19NC60SD20 A, 600 V fast IGBT with Ultrafast diodeFeatures Very low on-voltage drop (VCE(sat))TAB Minimum power losses at 5 kHz in hard switching Optimized performance for medium operating frequencies.332211 IGBT co-packaged with Ultrafast freewheeling TO-220FPdiodeTO-220ApplicationMedium frequency motor drivesDescription

STGWA60NC60WDR60 A, 600 V, ultrafast IGBTFeatures Very high frequency operation Low CRES / CIES ratio (no cross-conduction susceptibility) Very soft ultrafast recovery antiparallel diode32Applications1 WeldingTO-247 long leads Power factor correction SMPS High frequency inverter/converterFigure 1. Internal schematic diagramDescriptionThis

STGD10NC60SSTGP10NC60S10 A - 600 V fast IGBTFeatures Very low on-voltage drop (VCE(sat)) Minimum power losses at 5 kHz in hard switching Optimized performance for medium operating frequencies33211ApplicationDPAK TO-220 Medium frequency motor controlDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-of

STGB6NC60HD - STGB6NC60HD-1STGF6NC60HD - STGP6NC60HDN-channel 600V - 7A - I2PAK / D2PAK / TO-220 / TO-220FPVery fast PowerMESH IGBTFeaturesICVCE(sat)maxType VCES@25C @100CSTGB6NC60HD 600V

STGB6NC60HN-channel 600V - 7A - D2PAKVery fast PowerMESH IGBTGeneral featuresICVCE(sat)maxType VCES@25C @100CSTGB6NC60H 600V

STGB14NC60KDSTGF14NC60KD, STGP14NC60KD14 A, 600 V - short-circuit rugged IGBTFeaturesTAB TAB2 Short circuit withstand time 10s. Low on-voltage drop (VCE(sat))3 Low Cres / Cies ratio (no cross conduction 3121susceptibility)DPAKTO-220 Switching losses include diode recovery energy Very soft ultra fast recovery antiparallel diode321App

STGW20NC60VDN-CHANNEL 30A - 600V TO-247Very Fast PowerMESH IGBTTable 1: General Features Figure 1: PackageTYPE VCES VCE(sat) (Max) IC @25C @100CSTGW20NC60VD 600 V

STGB14NC60KSTGD14NC60KN-channel 14A - 600V -DPAK - D2PAKShort circuit rated PowerMESH IGBTGeneral featuresIC VCE(sat) Type VCES(Max)@ 25C @100CSTGB14NC60K 600V

STGB19NC60KDSTGF19NC60KD - STGP19NC60KD20 A - 600 V - short circuit rugged IGBTFeatures Low on-voltage drop (VCE(sat)) Low Cres / Cies ratio (no cross conduction susceptibility)33 Short circuit withstand time 10 s 121 IGBT co-packaged with ultra fast free-wheeling D2PAKTO-220diodeApplications321 High frequency invertersTO-220FP Mot

STGF30NC60SSTGP30NC60S, STGWF30NC60S30 A, 600 V, fast IGBTFeaturesTAB Optimized performance for medium operating frequencies up to 5 kHz in hard switching Low on-voltage drop (VCE(sat))332 High current capability 211TO-220 TO-220FPApplication1113Motor drive21TO-3PFDescriptionThis device utilizes the advanced PowerMESH process resul

STGB8NC60K - STGD8NC60KSTGP8NC60KN-channel 600V - 8A - D2PAK / DPAK / TO-220Short circuit rated PowerMESH IGBTFeaturesICVCE(sat)TypType VCES@25C @100C3STGB8NC60K 600V 2.2V 8A13STGD8NC60K 600V 2.2V 8A 21 DPAKTO-220STGP8NC60K 600V 2.2V 8A Lower on voltage drop (Vcesat)3 Lower CRES / CIES ratio (no cross-conduction 1susceptibility)DPAK

STGD6NC60HDN-channel 600V - 7A - DPAKVery fast PowerMESH IGBTGeneral featuresICVCE(sat)MaxType VCES@25C @100CSTGD6NC60HD 600V

STGx19NC60HDSTGWA19NC60HD19 A, 600 V, very fast IGBT with Ultrafast diodeFeaturesTABTAB Low on-voltage drop (VCE(sat)) Very soft Ultrafast recovery anti-parallel diode31321DPAKApplicationsTO-220 High frequency motor drives SMPS and PFC in both hard switch and resonant topologies332211DescriptionTO-220FPTO-247This IGBT utilize

STS1HNC60N-CHANNEL 600V - 7 - 0.4A SO-8PowerMeshII MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTS1HNC60 600 V

STGB7NC60HD, STGF7NC60HD, STGP7NC60HDN-channel 14 A, 600 V, very fast IGBT with Ultrafast diodeDatasheet - production dataFeaturesTABTAB Low on-voltage drop (VCE(sat)) Off losses include tail current33 1 Losses include diode recovery energy 21 High frequency operation up to 70 kHz DPAK (TO-263)IPAK (TO-262) Very soft ultra fast recovery anti para

STGP7NC60KD - STGF7NC60KDSTGB7NC60KDN-CHANNEL 7A - 600V - TO-220/TO-220FP/D2PAKSHORT CIRCUIT RATED PowerMESH IGBTPRODUCT PREVIEWTable 1: General Features Figure 1: PackageTYPE VCES VCE(sat) (Max) IC (#) @25C @100CSTGB7NC60KD 600 V

STGFW30NC60V30 A - 600 V - very fast IGBTDatasheet - production dataFeatures High frequency operation up to 50 kHz Lower CRES / CIES ratio (no cross-conduction susceptibility) High current capability111Applications32 High frequency inverters1 UPS, motor driversTO3-PF HF, SMPS and PFC in both hard switch and resonant topologiesDescription

STGB14NC60KDSTGF14NC60KD, STGP14NC60KD14 A, 600 V - short-circuit rugged IGBTFeaturesTAB TAB2 Short circuit withstand time 10s. Low on-voltage drop (VCE(sat))3 Low Cres / Cies ratio (no cross conduction 3121susceptibility)DPAKTO-220 Switching losses include diode recovery energy Very soft ultra fast recovery antiparallel diode321App

STGB6NC60HD - STGB6NC60HD-1STGF6NC60HD - STGP6NC60HDN-channel 600V - 7A - I2PAK / D2PAK / TO-220 / TO-220FPVery fast PowerMESH IGBTFeaturesICVCE(sat)maxType VCES@25C @100CSTGB6NC60HD 600V

STGB10NC60HD - STGD10NC60HDSTGF10NC60HD - STGP10NC60HD 600 V - 10 A - very fast IGBTFeatures2 Low on-voltage drop (VCE(sat))3 Low CRES / CIES ratio (no cross-conduction 3 11susceptibility)DPAK DPAK Very soft ultra fast recovery antiparallel diodeApplications High frequency motor controls3 32 2 SMPS and PFC in both hard switch and 1 1resonant

STGW45NC60WD45 A - 600 V ultra fast IGBTFeatures Low CRES / CIES ratio (no cross conduction susceptibility) Very soft ultra fast recovery anti parallel diodeApplications32 High frequency inverters, UPS1 Motor driversTO-247 long leads HF, SMPS and PFC in both hard switch and resonant topologies Welding Induction heatingFigure 1. Internal sch

STP9NC60STP9NC60FPN-CHANNEL 600V - 0.6 - 9A - TO-220/TO-220FPPowerMeshII MOSFETTYPE VDSS RDS(on) IDSTP9NC60 600 V

STGB10NC60K10 A, 600 V short-circuit rugged IGBTFeatures Low on voltage drop (VCESAT) Short-circuit withstand time 10 sTABApplications High frequency motor controls31 SMPS and PFC in both hard switch and resonant topologiesDPAK Motor drivesDescriptionThis device utilizes the advanced Power MESH Figure 1. Internal schematic diagramprocess r

STGF30NC60SSTGP30NC60S, STGWF30NC60S30 A, 600 V, fast IGBTFeaturesTAB Optimized performance for medium operating frequencies up to 5 kHz in hard switching Low on-voltage drop (VCE(sat))332 High current capability 211TO-220 TO-220FPApplication1113Motor drive21TO-3PFDescriptionThis device utilizes the advanced PowerMESH process resul

STU11NC60N-CHANNEL 600V - 0.48 - 11A Max220PowerMeshII MOSFETTYPE VDSS RDS(on) IDSTU11NC60 600V

STGB10NC60HD - STGD10NC60HDSTGF10NC60HD - STGP10NC60HD 600 V - 10 A - very fast IGBTFeatures2 Low on-voltage drop (VCE(sat))3 Low CRES / CIES ratio (no cross-conduction 3 11susceptibility)DPAK DPAK Very soft ultra fast recovery antiparallel diodeApplications High frequency motor controls3 32 2 SMPS and PFC in both hard switch and 1 1resonant

STGW45NC60VD45 A - 600 V - very fast IGBTFeatures Low CRES / CIES ratio (no cross conduction susceptibility) IGBT co-packaged with ultra fast free-wheeling diodeApplications321 High frequency inverters UPSTO-247 long leads Motor drivers Induction heatingDescriptionFigure 1. Internal schematic diagramThis IGBT utilizes the advanced PowerMESH

STGB10NC60HD - STGD10NC60HDSTGF10NC60HD - STGP10NC60HD 600 V - 10 A - very fast IGBTFeatures2 Low on-voltage drop (VCE(sat))3 Low CRES / CIES ratio (no cross-conduction 3 11susceptibility)DPAK DPAK Very soft ultra fast recovery antiparallel diodeApplications High frequency motor controls3 32 2 SMPS and PFC in both hard switch and 1 1resonant

STGBL6NC60D STGPL6NC60D600 V - 6 A hyper fast IGBTDatasheet - production dataFeatures Low CRES / CIES ratio (no cross-conduction TABTABsusceptibility) Very soft ultra fast recovery antiparallel diode33Applications1 21 Very high frequency operation High frequency lamp ballast TO-220DPAK SMPS and PFC (including hard switching)DescriptionThi

STGB14NC60KSTGD14NC60KN-channel 14A - 600V -DPAK - D2PAKShort circuit rated PowerMESH IGBTGeneral featuresIC VCE(sat) Type VCES(Max)@ 25C @100CSTGB14NC60K 600V

STGW39NC60VD40 A - 600 V - very fast IGBTFeatures Low CRES / CIES ratio (no cross conduction susceptibility) IGBT co-packaged with ultra fast free-wheeling diode3Applications21 High frequency invertersTO-247 UPS Motor drivers Induction heatingDescriptionFigure 1. Internal schematic diagramThis IGBT utilizes the advanced PowerMESH proces

STGY40NC60VDN-channel 600V - 50A - Max247Very fast PowerMESH IGBTFeaturesVCE(sat) IC VCESType(max)@25C @100CSTGY40NC60VD 600V

STB6LNC60N-CHANNEL 600V - 1 - 5.8A D2PAKPowerMeshII MOSFETTYPE VDSS RDS(on) IDSTB6LNC60 600 V

STGW30NC60KD30 A - 600 V - short circuit rugged IGBTFeatures Low on-voltage drop (VCE(sat)) Low Cres / Cies ratio (no cross conduction susceptibility) Short circuit withstand time 10 s IGBT co-packaged with ultra fast free-wheeling diode321ApplicationsTO-247 High frequency inverters Motor driversDescriptionFigure 1. Internal schematic diagra

STGB19NC60H, STGP19NC60HSTGW19NC60H19 A - 600 V - very fast IGBTFeatures Low on-voltage drop (VCE(sat)) High frequency operation321Applications3TO-2472 High frequency motor drives 1 SMPS and PFC in both hard switch and TO-220resonant topologies31DPAKDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent t

STGB19NC60HDT4, STGF19NC60HDSTGP19NC60HD, STGW19NC60HD19 A, 600 V, very fast IGBT with Ultrafast diodeFeaturesTABTAB Low on-voltage drop (VCE(sat)) Very soft Ultrafast recovery anti-parallel diode331 21ApplicationsDPAKTO-220 High frequency motor drives SMPS and PFC in both hard switch and resonant topologies332211DescriptionTO-247

STP6NC60 - STP6NC60FPSTB6NC60-1N-CHANNEL 600V - 1 - 6A TO-220/TO-220FP/I2PAKPowerMESHII MOSFETTYPE VDSS RDS(on) IDSTP(B)6NC60(-1) 600 V

STGB19NC60WSTGP19NC60W, STGW19NC60W19 A - 600 V - ultra fast IGBTFeatures High frequency operation Low CRES / CIES ratio (no cross-conduction susceptibility)3132Applications1D2PAK High frequency motor controls, inverters, UPS TO-247 HF, SMPS and PFC in both hard switch and 32resonant topologies 1TO-220DescriptionThis IGBT utilizes the advanc

STGB19NC60WSTGP19NC60W, STGW19NC60W19 A - 600 V - ultra fast IGBTFeatures High frequency operation Low CRES / CIES ratio (no cross-conduction susceptibility)3132Applications1D2PAK High frequency motor controls, inverters, UPS TO-247 HF, SMPS and PFC in both hard switch and 32resonant topologies 1TO-220DescriptionThis IGBT utilizes the advanc

STN1NC60N-CHANNEL 600V - 12 - 0.3A - SOT-223PowerMeshII MOSFETTYPE VDSS RDS(on) IDSTN1NC60 600 V

STGW30NC60WD30 A, 600 V ultra fast IGBTFeatures High frequency operation Lower CRES / CIES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery antiparallel diode Applications321 High frequency motor controls, inverters, UPSTO-247 HF, SMPS and PFC in both hard switch and resonant topologiesDescriptionThis IGBT utilizes the advan

STGBL6NC60D - STGDL6NC60DSTGFL6NC60D - STGPL6NC60D600 V - 6 A hyper fast IGBTFeatures Low CRES / CIES ratio (no cross-conduction susceptibility)3 Very soft ultra fast recovery antiparallel diode32211TO-220FP TO-220Applications Very high frequency operation High frequency lamp ballast33 SMPS and PFC (hard switching too)11DPAKDPAKDe

STGB14NC60KDSTGF14NC60KD, STGP14NC60KD14 A, 600 V - short-circuit rugged IGBTFeaturesTAB TAB2 Short circuit withstand time 10s. Low on-voltage drop (VCE(sat))3 Low Cres / Cies ratio (no cross conduction 3121susceptibility)DPAKTO-220 Switching losses include diode recovery energy Very soft ultra fast recovery antiparallel diode321App

STP6LNC60STP6LNC60FPN-CHANNEL 600V - 1 - 5.8A TO-220/TO-220FPPowerMeshII MOSFETTYPE VDSS RDS(on) IDSTP6LNC60 600 V

STGB19NC60KSTGP19NC60K20 A - 600 V - short circuit rugged IGBTFeatures Low on-voltage drop (VCE(sat)) Low Cres / Cies ratio (no cross conduction susceptibility) Short circuit withstand time 10 s33 IGBT co-packaged with ultra fast free-wheeling 121diodeD2PAKTO-220Applications High frequency inverters Motor driversDescriptionFigure 1.

STGB6NC60HDT4, STGF6NC60HD, STGP6NC60HDDatasheetN-channel 600 V, 7 A, very fast IGBTFeaturesTAB Low VCE(sat)312 Low CRES/CIES ratio (no cross-conduction susceptibility)D PAK321 Very soft ultra fast recovery antiparallel diodeTO-220FPTAB High-frequency operation321ApplicationsTO-220 High-frequency invertersC(2, TAB) SMPS and PFC

STGB20NC60V - STGP20NC60VSTGW20NC60V30 A - 600 V - very fast IGBTFeatures High frequency operation up to 50 kHz Lower CRES / CIES ratio (no cross-conduction susceptibility)3 High current capability 3221 1ApplicationsTO-247 TO-22031 High frequency inverters UPS, motor drivers DPAK HF, SMPS and PFC in both hard switch and resonant topologi

STGB10NC60KD, STGD10NC60KDSTGF10NC60KD, STGP10NC60KD10 A, 600 V short-circuit rugged IGBTFeaturesTABTAB Lower on voltage drop (VCE(sat))3 Lower CRES / CIES ratio (no cross-conduction 131susceptibility)DPAK Very soft ultra fast recovery antiparallel diode D2PAKTAB Short-circuit withstand time 10sDescriptionThis IGBT utilizes the advanced PowerM

STD2NC60N-CHANNEL 600V - 3.3 - 2A DPAK / IPAKPowerMeshII MOSFETTYPE VDSS RDS(on) IDSTD2NC60 600V

STGF19NC60WDN-channel 600V - 7A - TO-220Ultra fast PowerMESH IGBTPRELIMINARY DATAFeaturesVCE(sat) IC VCESType@100C(max)@25CSTGF19NC60WD 600V

STGB8NC60KD - STGD8NC60KDSTGF8NC60KD - STGP8NC60KD600 V - 8 A - short circuit rugged IGBTFeatures2 Lower on voltage drop (VCE(sat))3 Lower CRES / CIES ratio (no cross-conduction 1susceptibility)32 DPAK1 Very soft ultra fast recovery antiparallel diode TO-220 Short circuit withstand time 10 s2Applications High frequency motor controls 3 32

STP2NC60STP2NC60FPN-CHANNEL 600V - 7 - 1.9A - TO-220/TO-220FPPowerMeshII MOSFETTYPE VDSS RDS(on) IDSTP2NC60 600 V

STP2HNC60STP2HNC60FPN-CHANNEL 600V - 4 - 2.2A TO-220/TO-220FPPowerMeshII MOSFETTYPE VDSS RDS(on) IDSTP2HNC60 600 V

STP4NC60 - STP4NC60FPSTB4NC60-1N-CHANNEL 600V - 1.8 - 4.2A TO-220/TO-220FP/I2PAKPowerMeshII MOSFETTYPE VDSS RDS(on) IDSTP4NC60 600V

STGB19NC60HDT4, STGF19NC60HDSTGP19NC60HD, STGW19NC60HD19 A, 600 V, very fast IGBT with Ultrafast diodeFeaturesTABTAB Low on-voltage drop (VCE(sat)) Very soft Ultrafast recovery anti-parallel diode331 21ApplicationsDPAKTO-220 High frequency motor drives SMPS and PFC in both hard switch and resonant topologies332211DescriptionTO-247

STGB7NC60HD, STGF7NC60HD, STGP7NC60HDN-channel 14 A, 600 V, very fast IGBT with Ultrafast diodeDatasheet - production dataFeaturesTABTAB Low on-voltage drop (VCE(sat)) Off losses include tail current33 1 Losses include diode recovery energy 21 High frequency operation up to 70 kHz DPAK (TO-263)IPAK (TO-262) Very soft ultra fast recovery anti para

STGBL6NC60DI, STGDL6NC60DISTGFL6NC60DI, STGPL6NC60DI6 A, 600 V hyper fast IGBTFeatures Low CRES / CIES ratio (no cross-conduction susceptibility)3 Very high frequency operation32211 Very soft ultrafast recovery antiparallel diodeTO-220FP TO-220Applications High frequency inverters33 SMPS and PFC (hard switching too)11 High frequency

STGB10NC60HD - STGD10NC60HDSTGF10NC60HD - STGP10NC60HD 600 V - 10 A - very fast IGBTFeatures2 Low on-voltage drop (VCE(sat))3 Low CRES / CIES ratio (no cross-conduction 3 11susceptibility)DPAK DPAK Very soft ultra fast recovery antiparallel diodeApplications High frequency motor controls3 32 2 SMPS and PFC in both hard switch and 1 1resonant

STQ1HNC60N-CHANNEL 600V - 7 - 0.4A TO-92PowerMeshII MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTQ1HNC60 600 V

STGB6NC60HD - STGB6NC60HD-1STGF6NC60HD - STGP6NC60HDN-channel 600V - 7A - I2PAK / D2PAK / TO-220 / TO-220FPVery fast PowerMESH IGBTFeaturesICVCE(sat)maxType VCES@25C @100CSTGB6NC60HD 600V

STD1HNC60N-CHANNEL 600V - 4 - 2A - IPAK/DPAKPowerMeshII MOSFETTYPE VDSS RDS(on) IDSTD1HNC60 600 V

STGB8NC60KD - STGD8NC60KDSTGF8NC60KD - STGP8NC60KD600 V - 8 A - short circuit rugged IGBTFeatures2 Lower on voltage drop (VCE(sat))3 Lower CRES / CIES ratio (no cross-conduction 1susceptibility)32 DPAK1 Very soft ultra fast recovery antiparallel diode TO-220 Short circuit withstand time 10 s2Applications High frequency motor controls 3 32

STGB19NC60KSTGP19NC60K20 A - 600 V - short circuit rugged IGBTFeatures Low on-voltage drop (VCE(sat)) Low Cres / Cies ratio (no cross conduction susceptibility) Short circuit withstand time 10 s33 IGBT co-packaged with ultra fast free-wheeling 121diodeD2PAKTO-220Applications High frequency inverters Motor driversDescriptionFigure 1.

STGB19NC60SSTGP19NC60S20 A, 600 V fast IGBTFeatures Very low on-voltage drop (VCE(sat)) Minimum power losses at 5 kHz in hard switchingTAB Optimized performance for medium operating frequencies.33121ApplicationD2PAKTO-220 Medium frequency motor drivesDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent tr

BC636SMALL SIGNAL PNP TRANSISTORPRELIMINARY DATAOrdering Code Marking Package / ShipmentBC636 BC636 TO-92 / BulkBC636-AP BC636 TO-92 / Ammopack SILICON EPITAXIAL PLANAR PNPTRANSISTOR TO-92 PACKAGE SUITABLE FORTHROUGH-HOLE PCB ASSEMBLY THE NPN COMPLEMENTARY TYPE ISBC635TO-92 TO-92APPLICATIONS Bulk Ammopack WELL SUITABLE FOR TV AND HOMEAPPLIANCE EQUIPMENT SMA

STD1HNC60N-CHANNEL 600V - 4 - 2A - IPAK/DPAKPowerMeshII MOSFETTYPE VDSS RDS(on) IDSTD1HNC60 600 V

STP6NC60 - STP6NC60FPSTB6NC60-1N-CHANNEL 600V - 1 - 6A TO-220/TO-220FP/I2PAKPowerMESHII MOSFETTYPE VDSS RDS(on) IDSTP(B)6NC60(-1) 600 V

STGB20NC60V - STGP20NC60VSTGW20NC60V30 A - 600 V - very fast IGBTFeatures High frequency operation up to 50 kHz Lower CRES / CIES ratio (no cross-conduction susceptibility)3 High current capability 3221 1ApplicationsTO-247 TO-22031 High frequency inverters UPS, motor drivers DPAK HF, SMPS and PFC in both hard switch and resonant topologi

TPC6106 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II) TPC6106 Notebook PC Applications Unit: mmPortable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 58 m (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -40

TPC6007-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC6007-H High-Efficiency DC/DC Converter Applications Unit: mm Small footprint due to small and thin package High-speed switching Small gate charge: Qsw = 1.8 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 40 m (typ.) High forward transfer admittance: |

2SC6124 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6124 Power Amplifier Applications Unit: mmPower Switching Applications Low collector emitter saturation voltage : VCE (sat) = 0.5 V (max) (IC = 1 A) High-speed switching: tstg = 400 ns (typ.) Complementary to 2SA2206 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO

TPC6110 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC6110 Power Management Switch Applications Unit: mm Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 43 m (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.1mA) Abs

TPC6111 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSV) TPC6111 Notebook PC Applications Portable Equipment Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 33 m (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -20 V) Enhancement mode: Vth = -0.3 to -1.0 V (VDS = -10 V, ID = -1mA) Absolute Maximum Ratings (Ta = 25C)

TPC6604 TOSHIBA Transistor Silicon PNP Epitaxial Type TPC6604 High-Speed Switching Applications Unit: mmDC-DC Converter Applications High DC current gain : hFE = 200 to 500 (IC = -0.1 A) Low collector-emitter saturation voltage : VCE (sat) = -0.23 V (max) High-speed switching : tf = 70 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating

2SC6077 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6077 Power Amplifier Applications Unit: mm Power Switching Applications Low collector saturation voltage: VCE (sat) = 0.5 V (max)IC = 1A High-speed switching: tstg = 0.4 s (typ) www.DataSheet4U.comAbsolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitCollector-ba

2SC6026 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6026 General-Purpose Amplifier Applications Unit: mm High voltage and high current : VCEO = 50 V, IC = 100 mA (max) Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) High hFE hFE = 120~400 : Complementary to 2SA2154 13Absolute Maximum Ratings (Ta = 25C) 2

2SC6034 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6034 High-Speed, High-Voltage Switching Applications Unit: mmSwitching Regulator Applications DC-DC Converter Applications High-speed switching: tf = 0.24 s (max) (IC = 0.3 A) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO 600 VCollector-emitter voltage

TPC6008-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC6008-HTPC6008-HTPC6008-HTPC6008-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 0.9 nC (typ.)(4) Lo

TPC6901A TOSHIBA Multi-Chip Transistor Silicon NPN / PNP Epitaxial Type TPC6901A High-Speed Switching Applications Unit: mmMOS Gate Drive Applications NPN and PNP transistors are mounted on a compact and slim package. High DC current gain : NPN hFE = 400 to 1000 : PNP hFE = 200 to 500 Low collector-emitter saturation voltage : NPN VCE (sat) = 0.17 V (max) :

2SC6100 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6100 High-Speed Switching Applications Unit: mmDC-DC Converter Applications 2.10.1Strobe Applications 1.70.1 High DC current gain: hFE = 400 to 1000 (IC = 0.3 A) 1 Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max) 32 High-speed switching: tf = 120 ns (typ.) Absolute Maximum Rati

TPC6105 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPC6105 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: RDS (ON) = 72 m (typ.) High forward transfer admittance: |Yfs| = 4.7 S (typ.) Low leakage current : IDSS = -10 A (max) (VDS = -20 V) Enhancement mode : Vth = -0.5 to -1.2 V

TPC6504 TOSHIBA Transistor Silicon NPN Epitaxial Type TPC6504 High-Speed Switching Applications Unit: mmDC-DC Converter Applications Strobe Applications High DC current gain : hFE = 400 to 1000 (IC = 0.1 A) Low collector-emitter saturation voltage : VCE (sat) = 0.17 V (max) High-speed switching : tf = 85 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characte

TPC6113 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC6113 Lithium Ion Battery Applications Power Management Switch Applications Unit: mm Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 38 m (typ.) ( VGS = -4.5V) Low leakage current: IDSS = -10 A (max) (VDS = -20 V) Enhancement mode: Vth

TPC6107 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIV) TPC6107 Notebook PC Applications Unit: mmPortable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 40 m (typ.) High forward transfer admittance: |Yfs| = 9.6 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 20 V)

2SC6075 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6075 Power Amplifier Applications Unit: mmPower Switching Applications Low collector emitter saturation voltage : VCE (sat) = 0.5 V (max)IC = 1A High-speed switching: tstg = 0.4 s (typ) www.DataSheet4U.comAbsolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO 160

TPC6006-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC6006-H Notebook PC Applications Unit: mmPortable Equipment Applications Small footprint due to small and thin package High-speed switching Small gate charge: Qsw = 2.4 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 59 m (typ.) High forward transfer

TPC6109-H TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC6109-H High-Efficiency DC-DC Converter Applications Unit: mm Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 44 m (typ.) (VDS = -10 V) High forward transfer admittance: |Yfs| = 8.0 S (typ.) Low leakage current: IDSS = -1

2SC6000 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6000 High Speed Switching Applications Unit: mmDC-DC Converter Applications High DC current gain: hFE = 250 to 400 (IC = 2.5 A) Low collector-emitter saturation: VCE (sat) = 0.18 V (max) High speed switching: tf = 13 ns (typ) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollect

TPC6501 TOSHIBA Transistor Silicon NPN Epitaxial Type TPC6501 High-Speed Switching Applications Unit: mmDC-DC Converter Applications Strobe Applications High DC current gain: hFE = 400 to 1000 (IC = 0.2 A) Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) High-speed switching: tf = 25 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteris

2SC6076 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6076 Power Amplifier Applications Unit: mmPower Switching Applications Low collector saturation voltage: VCE (sat) = 0.5 V (max) ( IC = 1A) High-speed switching: tstg = 0.4 s (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO 160 VCollector-emitt

2SC6126 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6126 High-Speed Switching Applications Unit : mmDC-DC Converter Applications LCD Backlighting Applications High DC current gain: hFE = 250 to 400 (IC= 0.3 A) Low collector-emitter saturation: VCE(sat) = 0.18 V (max) High-speed switching: tf = 40 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristic

2SC6072 NPN 2SC6072 : mm :fT=200MHz() (Ta = 25C) VCBO V 180

2SC6079 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6079 Power Amplifier Applications Unit: mmPower Switching Applications Low collector saturation voltage: VCE (sat) = 0.5 V (max)IC = 1A High-speed switching: tstg = 0.4 s (typ) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO 160 VCollector-emitter voltage VC

TPC6012 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) TPC6012 Notebook PC Applications Portable Equipment Applications Unit: mm Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 20 m (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 20 V) Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID

TPC6108 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC6108 TENTATIVENotebook PC Applications Unit: mmPortable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: R = 50 m (typ.) DS (ON) High forward transfer admittance: |Y | = 7.4 S (typ.) fs Low leakage cur

TK17C65WMOSFETs Silicon N-Channel MOS (DTMOS)TK17C65WTK17C65WTK17C65WTK17C65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.17 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En

2CS6134 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6134 High-Speed Switching Applications Unit: mmDC-DC Converter Applications 2.10.1Strobe Applications 1.70.1 High DC current gain: hFE = 250 to 400 (IC = 0.3A) 1 Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max) 32 High-speed switching: tf = 25 ns (typ.) Absolute Maximum Ratings (

2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6026MFV General-Purpose Amplifier Applications Unit: mm1.2 0.05 High voltage and high current : VCEO = 50 V, IC = 150 mA (max) 0.80 0.05 Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) 1 High hFE : hFE = 120 to 400 1 Complementary to 2SA2154MFV 32

2SC6061 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6061 High-Speed Switching Applications Unit: mmDC-DC Converter Applications +0.2 2.8-0.3 +0.2 1.6-0.1 High-DC current gain: hFE = 120 to 300 (IC = 0.1 A) Low-collector-emitter saturation: VCE (sat) = 0.14 V (max) 1 High-speed switching: tf = 0.2 s (typ) 32 Absolute Maximum Ratings (Ta = 25C)

TK14C65WMOSFETs Silicon N-Channel MOS (DTMOS)TK14C65WTK14C65WTK14C65WTK14C65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.22 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En

2SC6078 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6078 Power Amplifier Applications Unit: mm Power Switching Applications Low collector saturation voltage: VCE (sat) = 0.5 V (max)IC = 1A High-speed switching: tstg = 0.4 s (typ) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO 160 V

TK14C65W5MOSFETs Silicon N-Channel MOS (DTMOS)TK14C65W5TK14C65W5TK14C65W5TK14C65W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 100 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.25 (typ.) by using Super Junction Struc

2SC6052 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6052 High-Speed Switching Applications Unit: mmPower Amplifier Applications High DC current gain: hFE = 180 to 390 (IC = 0.5 A) Low collector-emitter saturation: VCE (sat) = 0.20 V (max.) High-speed switching: tf = 15 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitCollec

2SC6026CT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC6026CT General Purpose Amplifier Applications Unit: mm0.60.05 High voltage and high current 0.50.03: VCEO = 50V, IC = 100mA (max) Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)= 0.95 (typ.) High hFE hFE = 120 to 400 : Complementary to 2SA2154CT Absolut

2SC6136 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6136 High Voltage Switching Applications Unit: mm Switching Regulator Applications DC-DC Converter Applications High speed switching: tf = 0.18 s (typ.) (IC = 0.3 A) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 600 VCollector-emitter voltag

2SC6133 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6133 High-Speed Switching Applications Unit: mmDC-DC Converter Applications 2.10.11.70.1 High DC current gain: hFE = 400 to 1000 (IC = 0.15A) 1 Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) 32 High-speed switching: tf = 45 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Char

2SC6042 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6042 High-Speed, High-Voltage Switching Applications Unit: mmSwitching Regulator Applications DC-DC Converter Applications High-speed switching: tf = 0.2 s (max) (IC = 0.3A) High breakdown voltage: VCES = 800 V, VCEO = 375 V Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitColle

2SC6067 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC6067 Medium Power Amplifier Applications Unit: mm Strobe Flash Applications Low Saturation Voltage: VCE (sat) = 0.3 V (max) (@ IC=3A / IB=60mA Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-Base voltage V 15 VCBO Collector-Emitter voltage V 10 VCEO Emitt

2SC6105 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC6105 High Voltage Switching Applications Unit: mm High voltage: VCEO = 600 V (max) Low saturation voltage: VCE (sat) (1) = 1.0 V (max) @IC = 20 mA, IB = 0.5 mA Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 600 VCollector-emitter voltage

TPC6602 TOSHIBA Transistor Silicon PNP Epitaxial Type TPC6602 High-Speed Switching Applications Unit: mmDC-DC Converter Applications Strobe Applications High DC current gain: hFE = 200 to 500 (IC = -0.2 A) Low collector-emitter saturation voltage: VCE (sat) = -0.19 V (max) High-speed switching: tf = 25 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteri

TPC6601 TOSHIBA Transistor Silicon PNP Epitaxial Type TPC6601 High-Speed Switching Applications Unit: mmDC-DC Converter Applications High DC current gain: hFE = 200 to 500 (IC = -0.3 A) Low collector-emitter saturation voltage: VCE (sat) = -0.2 V (max) High-speed switching: tf = 90 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Uni

TPC6011 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV) TPC6011 Notebook PC Applications Portable Equipment Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 16 m (typ.) ( VGS = 10V) Low leakage current: IDSS = 10 A (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta

TPC6603 TOSHIBA Transistor Silicon PNP Epitaxial Type TPC6603 Switching Applications Unit: mmDC/DC Converter Applications Strobe Flash Applications High DC current gain: hFE = 200 to 500 (IC = -0.5 A) Low collector-emitter saturation: VCE (sat) = -0.19 V (max) High-speed switching: tf = 40 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol R

TPC6130MOSFETs Silicon P-Channel MOS (U-MOS)TPC6130TPC6130TPC6130TPC61301. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches2. Features2. Features2. Features2. Features(1) Small footprint due to small and thin package(2) Low drain-source on-resistance: RDS(ON) = 86 m (typ.) (VGS = -4.

HN3C67FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN3C67FE Unit: mmAudio Frequency Amplifier Applications AM Amplifier Applications Small package (dual type) High voltage and high current : VCEO = 50V, IC = 150mA (max) High hFE : hFE = 120~400 Excellent hFE linearity : hFE (IC = 0.1mA) / (IC = 2mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25C)

TPC6503 TOSHIBA Transistor Silicon NPN Epitaxial Type TPC6503 High-Speed Switching Applications Unit: mmDC-DC Converter Applications Strobe Applications High DC current gain: hFE = 400 to 1000 (IC = 0.15 A) Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) High-speed switching: tf = 45 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteri

TPC6D03 TOSHIBA Multi-Chip Device Silicon PNP Epitaxial Type, Schottky Barrier Diode TPC6D03 High-Speed Switching Applications DC-DC Converter Applications Unit: mm A PNP transistor and a Schottky barrier diode are housed on a compact and slim package. Absolute Maximum Ratings Transistor (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -20 V

2SC6062 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6062 High-Speed Switching Applications Unit: mmDC-DC Converter Applications +0.2 2.8-0.3 Strobe Applications +0.2 1.6-0.1 High-DC current gain: hFE = 250 to 400 (IC = 0.5 1 A)Low-collector-emitter saturation: VCE (sat) = 0.12 V (max) High-speed switching: tf = 25 ns (typ.) 32 Absolute Maximum Ratings (Ta

2SC6140 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6140 Audio Frequency Amplifier Applications : mm High collector voltage : VCEO = 160 V Small collector output capacitance : Cob = 12pF (typ.) High transition frequency : fT = 100MHz (typ.) Complementary to 2SA2220 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollec

2SC6125 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6125 High-Speed Switching Applications Unit : mmPower Amplifier Applications High DC current gain: hFE = 180 to 390 (IC = 0.5 A) Low collector-emitter saturation: VCE (sat) = 0.2 V (max) High-speed switching: tf = 15 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Collector

TPC6201 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) TPC6201 HDD Motor Drive Applications Unit: mmNotebook PC Applications Portable Equipment Applications Low drain-source ON resistance: RDS (ON) = 80 m (typ.) High forward transfer admittance: |Y | = 3.8 S (typ.) fs Low leakage current: I = 10 A (max) (V = 30 V) DSS DS Enhancem

TPC6009-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC6009-HTPC6009-HTPC6009-HTPC6009-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 1.0 nC (typ.)(4) Lo

TPC6902 TOSHIBA Multi-Chip Transistor Silicon NPN / PNP Epitaxial Type TPC6902 High-Speed Switching Applications Unit: mmMOS Gate Drive Applications NPN and PNP transistors are mounted on a compact and slim package. High DC current gain : NPN hFE = 200 to 500 (IC = 0.2 A) : PNP hFE = 200 to 500 (IC = -0.2 A) Low collector-emitter saturation voltage : NPN VCE (sat) = 0.14

2SC6142 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6142 Unit: mm High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications MAX Excellent switching times: tf = 0.15 s (typ.) High collector breakdown voltage: VCES = 800

TPC6005 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC6005 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: R = 21 m (typ.) DS (ON) High forward transfer admittance: |Yfs| = 10 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 30 V) Enhancementmode: Vth = 0.5 to 1.2 V (VDS =

2SC6010 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6010 High Voltage Switching Applications Unit: mmSwitching Regulator Applications DC-DC Converter Applications High speed switching: tf = 0.24s (max) (IC = 0.3A) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 600 VCollector-emitter voltage VCEX 600 V

TPC6501 TOSHIBA Transistor Silicon NPN Epitaxial Type TPC6501 High-Speed Switching Applications Unit: mmDC-DC Converter Applications Strobe Applications High DC current gain: hFE = 400 to 1000 (IC = 0.2 A) Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) High-speed switching: tf = 25 ns (typ.) Maximum Ratings (Ta = 25C) Characteristics Symb

HN3C61FU TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN3C61FU Unit: mmUltra High Speed Switching Application Computer, Counter Applications. High Transition Frequency : fT = 400MHz(Typ.) : VCE(sat) = 0.3V(Max.) Low Saturation Voltage High Speed Switching Time : tstg = 15ns(Typ.) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristic Symb

2SC6033 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6033 Unit : mmHigh-Speed Swtching Applications +0.2 2.8-0.3 DC-DC Converter Applications +0.2 1.6-0.1 Storobe Flash Applications 1 High DC current gain: hFE = 250 to 400 (IC = 0.3 A) Low collector-emitter saturation: VCE (sat) = 0.18 V (max) 3 2 High-speed switching: tf = 38 ns (typ.

2SC6132 NPN 2SC6132 : mm : VCE (sat) = 0.15V () (Ta = 25C)

TPC6067MOSFETs Silicon N-Channel MOS (U-MOS)TPC6067TPC6067TPC6067TPC60671. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 18 m (typ.) (VGS = 10 V)(3) Low leakage curren

2SC6040 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6040 High-Speed and High-Voltage Switching Applications Unit: mmSwitching Regulator Applications DC-DC Converter Applications High-speed switching: tf = 0.2 s (max) (IC = 0.3 A) High breakdown voltage: VCES = 800 V, VCEO = 410 V Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitC

TPC6102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) TPC6102 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: RDS (ON) = 48 m (typ.) High forward transfer admittance: |Yfs| = 6 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 to -2.0 V (VDS =

2SC6127 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6127 High Voltage Switching Applications Unit: mmHigh Voltage Amplifier Applications High voltage: VCEO = 800 V Absolute Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 800 VCollector-emitter voltage VCEO 800 VEmitter-base voltage VEBO 5 VCollector current IC 5

TPC6901 TOSHIBA Multi-Chip Transistor Silicon NPN & PNP Epitaxial Type TPC6901 High-Speed Switching Applications Unit: mmMOS Gate Drive Applications NPN and PNP transistors are mounted on a compact and slim package. High DC current gain: NPN hFE = 400 to 1000 : PNP hFE = 200 to 500 Low collector-emitter saturation voltage : NPN VCE (sat) = 0.17 V (max) : P

2SC6139 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6139 Audio Frequency Amplifier Applications Unit: mm High collector voltage : VCEO = 160 V (min) Small collector output capacitance : Cob = 12pF (typ.) High transition frequency : fT = 100MHz (typ.) Complementary to 2SA2219 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCo

TPC6103 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPC6103 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: RDS (ON) = 29 m (typ.) High forward transfer admittance: |Yfs| = 13 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -12 V) Enhancement mode: Vth

TK20C60WMOSFETs Silicon N-Channel MOS (DTMOS)TK20C60WTK20C60WTK20C60WTK20C60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.13 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En

TPC6001 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) TPC6001 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: RDS (ON) = 22 m (typ.) High forward transfer admittance: |Yfs| = 15 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 20 V) Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10

TPC6010-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC6010-HTPC6010-HTPC6010-HTPC6010-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 2.7 nC(typ.)(4) Low

2SC6135 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6135 High-Speed Switching Applications Unit: mmDC-DC Converter Applications 2.10.1Strobe Applications 1.70.11 High DC current gain: hFE = 400 to 1000 (IC = 0.1A) Low collector-emitter saturation voltage: VCE (sat) = 0.17 V (max) 32 High-speed switching: tf = 85 ns (typ.) Absolute Maximum Rating

TPC6901A TOSHIBA Multi-Chip Transistor Silicon NPN / PNP Epitaxial Type TPC6901A High-Speed Switching Applications Unit: mmMOS Gate Drive Applications NPN and PNP transistors are mounted on a compact and slim package. High DC current gain : NPN hFE = 400 to 1000 : PNP hFE = 200 to 500 Low collector-emitter saturation voltage : NPN VCE (sat) = 0.17 V (max) :

2SC6060 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6060 Unit: mmPower Amplifier Applications Driver Stage Amplifier Applications High-transition frequency: fT = 100 MHz (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO 230 VCollector-emitter voltage VCEO 230 VEmitter-base voltage VEBO 5 VDC IC 1.0 ACollec

TPC6701 TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type TPC6701 High-Speed Switching Applications Unit: mmMotor Drive Applications Inverter Lighting Applications Two NPN transistors are mounted on a compact and slim package. High DC current gain: hFE = 400 to 1000 (IC = 0.1 A) Low collector-emitter saturation voltage: VCE (sat) = 0.17 V (max) High-s

TPC6502 TOSHIBA Transistor Silicon NPN Epitaxial Type TPC6502 High-Speed Switching Applications Unit: mmDC-DC Converter Applications Strobe Applications High DC current gain: hFE = 400 to 1000 (IC = 0.3 A) Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max) High-speed switching: tf = 120 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteri

TPC6104 PMOS (U-MOSIII) TPC6104 PC : mm : R = 33 m () DS (ON) : |Yfs| = 12 S () :

TPC6003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC6003 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: RDS (ON) = 19 m (typ.) High forward transfer admittance: |Yfs| = 7 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10

2SC6087 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6087 Power Amplifier Applications Unit: mmPower Switching Applications Low collector emitter saturation voltage : VCE (sat) = 0.5 V (max)IC = 1A High-speed switching: tstg = 0.4 s (typ) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO 160 VVCEX 160 VColle

2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6026MFV General-Purpose Amplifier Applications Unit: mm1.2 0.05 High voltage and high current : VCEO = 50 V, IC = 150 mA (max) 0.80 0.05 Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) 1 High hFE : hFE = 120 to 400 1 Complementary to 2SA2154MFV 32

TK16C60WMOSFETs Silicon N-Channel MOS (DTMOS)TK16C60WTK16C60WTK16C60WTK16C60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.16 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En

TPC6004 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC6004 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: RDS (ON) = 19 m (typ.) High forward transfer admittance: |Yfs| = 11 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 20 V) Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 1

TPC6101 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) TPC6101 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: R = 48 m (typ.) DS (ON) High forward transfer admittance: |Yfs| = 8.2 S (typ.) Low leakage current: I = -10 A (max) (V = -20 V) DSS DS Enhancement-model: V = -0.5 to -1.2 V

TPC6902 TOSHIBA Multi-Chip Transistor Silicon NPN / PNP Epitaxial Type TPC6902 High-Speed Switching Applications Unit: mmMOS Gate Drive Applications NPN and PNP transistors are mounted on a compact and slim package. High DC current gain : NPN hFE = 200 to 500 (IC = 0.2 A) : PNP hFE = 200 to 500 (IC = -0.2 A) Low collector-emitter saturation voltage : NPN VCE (sat) = 0.14

Ordering number : EN8556 2SC6013NPN Epitaxial Planar Silicon Transistor2SC6013DC / DC Converter ApplicationsApplications Relay drivers, lamp drivers, motor drivers, flash.Features Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Narrow hFE range. High allowable power dissipation.

Ordering number : ENA1149 2SC6144SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon Transistor2SC6144High-Current Switching ApplicationsApplications Relay drivers, lamp drivers, motor drivers.Features Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.SpecificationsAbsolute Maxi

Ordering number : ENA0834 2SC6092LSSANYO SemiconductorsDATA SHEETNPN Triple Diffused Planar Silicon TransistorColor TV Horizontal Deflection2SC6092LSOutput ApplicationsFeatures High speed. High breakdown voltage (VCBO=1500V). Adoption of high reliability HVP process. Adoption of MBIT process.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symb

Ordering number : ENA0435 2SC6099SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon Transistor2SC6099High-Voltage Switching ApplicationsApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter.Features Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switch

Ordering number : ENA0995 2SC6089SANYO SemiconductorsDATA SHEETNPN Triple Diffused Planar Silicon TransistorColor TV Horizontal Deflection2SC6089Output ApplicationsFeatures High speed. High breakdown voltage (VCBO=1500V). Adoption of high reliability HVP process. Adoption of MBIT process.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol C

Ordering number : ENA0996 2SC6090LSSANYO SemiconductorsDATA SHEETNPN Triple Diffused Planar Silicon TransistorColor TV Horizontal Deflection2SC6090LSOutput ApplicationsFeatures High speed. High breakdown voltage (VCBO=1500V). Adoption of high reliability HVP process. Adoption of MBIT process.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symb

Ordering number : ENN82752SA2169 / 2SC6017PNP / NPN Epitaxial Planar Silicon TransistorsHigh-Current Switching2SA2169 / 2SC6017ApplicationsApplications Relay drivers, lamp drivers, motor drivers.Features Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.Specifications ( ) : 2SA2169Abs

Ordering number : ENN8326 2SC6043NPN Epitaxial Planar Silicon Transistors2SC6043High-Current Switching ApplicationsApplications Voltage regulators, relay drivers, lamp drivers, electrical equipment.Features Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.SpecificationsAbsolute Maximum Ra

Ordering number:EN4658FC601TR:PNP Epitaxial Planar Silicon TransistorSBD:Schottky Barrier DiodeDC-DC Converter ApplicationsFeatures Package Dimensions Composed of a Shottky barrier diode and a PNPunit:mmtransistor with built-in resistors, and contained in one2105ACP package, resulting in greatly improved circuit-[FC601]board using efficiency. The FC601 is compose

Ordering number : ENA0412 2SC6097NPN Epitaxial Planar Silicon Transistor2SC6097High-Current Switching ApplicationsApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter.Features Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dis

Ordering number : ENA0413 2SC6098NPN Epitaxial Planar Silicon Transistor2SC6098High-Voltage Switching ApplicationsApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter.Features Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dis

Ordering number : ENA0279 2SC6082SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon Transistor50V / 15A High-Speed Switching Ap-2SC6082plicationsApplications High-speed switching applications (switching regulator, driver circuit).Features Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed

Ordering number : ENA0274 2SC6093LSSANYO SemiconductorsDATA SHEETNPN Triple Diffused Planar Silicon TransistorColor TV Horizontal Deflection2SC6093LSOutput ApplicationsFeatures High speed. High breakdown voltage (VCBO=1500V). High reliability (Adoption of HVP process). Adoption of MBIT process. On-chip damper diode.SpecificationsAbsolute Maximum Rating

2SC6144SGOrdering number : ENA1800SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon Transistor2SC6144SGHigh-Current Switching ApplicationsApplications Relay drivers, lamp drivers, motor driversFeatures Adoption of MBIT process Large current capacitance (IC=10A) Low collector-to-emitter saturation voltage (VCE(sat)=180mV(typ.)) High-speed switchi

Ordering number : ENN8251 2SC6044NPN Epitaxial Planar Silicon Transistors2SC6044High-Current Switching ApplicationsApplications Voltage regulators, relay drivers, lamp drivers, electrical equipment.Features Adoption of MBIT process. Low collector-to-emitter saturation voltage. High current capacity. High-speed switching.SpecificationsAbsolute Maximum Ratin

Ordering number : ENN8143 2SC6023NPN Epitaxial Planar Silicon TransistorUHF to C Band Low-Noise Amplifier2SC6023and OSC ApplicationsFeatures Low-noise use : NF=1.2dB typ (f=2GHz). High cut-off frequency : fT=14.5GHz typ (VCE=1V).: fT=22GHz typ (VCE=3V). Low operating voltage. High gain : S21e2=14dB typ (f=2GHz).SpecificationsAbsolute Maximum Ratings at

Ordering number : ENA0434 2SC6096SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon Transistor2SC6096High-Voltage Switching ApplicationsApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter.Features Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switch

Ordering number : ENN8290 2SC6024NPN Epitaxial Planar Silicon TransistorUHF to C Band Low-Noise Amplifier2SC6024and OSC ApplicationsFeatures Low-noise use : NF=1.2dB typ (f=2GHz). High cut-off frequency : fT=14GHz typ (VCE=1V).: fT=21GHz typ (VCE=3V). Low operating voltage. High gain : S21e2=12.5dB typ (f=2GHz). Ultraminiature and thin flat leadless pa

Ordering number : ENA0578 2SC6118LSSANYO SemiconductorsDATA SHEETNPN Triple Diffused Planar Silicon TransistorColor TV Horizontal Deflection2SC6118LSOutput ApplicationsFeatures High speed. High breakdown voltage (VCBO=1500V). High reliability (Adoption of HVP process). Adoption of MBIT process. On-chip damper diode.SpecificationsAbsolute Maximum Rating

2SC6094 No. NA0410 NN N 2SC6094

2SC6095Ordering number : ENA0411ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon Transistor2SC6095High-Voltage Switching ApplicationsApplicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, inverterFeatures Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switchin

2SC6123 R07DS0329JJ0100Rev.1.00 2011.04.15 2SC6123 VCE(sat) hFE NPN OAFA DC/DC hFE

2SC6123 R07DS0329JJ0100Rev.1.00 2011.04.15 2SC6123 VCE(sat) hFE NPN OAFA DC/DC hFE

June1996 NDC632P P-Channel Logic Level Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese P-Channel logic level enhancement mode-2.7A, -20V. RDS(ON) = 0.14 @ VGS = -4.5Vpower field effect transistors are produced using RDS(ON) = 0.2 @ VGS = -2.7V.Fairchild's proprietary, high cell density, DMOStechnology. This very high density process is Propriet

BC635/637/639Switching and Amplifier Applications Complement to BC636/638/640TO-9211. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCER Collector-Emitter Voltage at RBE=1K : BC635 45 V: BC637 60 V: BC639 100 VVCES Collector-Emitter Voltage : BC635 45 V: BC637 6

November 2003 FDC6020C Complementary PowerTrench MOSFET General Description Features These N & P-Channel MOSFETs are produced using Q1 4.2 A, 20V. RDS(ON) = 55 m @ VGS = 4.5 V Fairchild Semiconductors advanced PowerTrench RDS(ON) = 82 m @ VGS = 2.5 V process that has been especially tailored to minimize Q2 5.9 A, 20V. RDS(ON) = 27 m @ VGS

April 1999 FDC6561AN Dual N-Channel Logic Level PowerTrenchTM MOSFET General Description FeaturesThese N-Channel Logic Level MOSFETs are2.5 A, 30 V. RDS(ON) = 0.095 @ VGS = 10 Vproduced using Fairchild Semiconductor's advanced RDS(ON) = 0.145 @ VGS = 4.5 VPowerTrench process that has been especially tailoredto minimize the on-state resistance and yet maintain Very fas

July 2009FDMC6679AZP-Channel PowerTrench MOSFET -30 V, -20 A, 10 mFeatures General DescriptionThe FDMC6679AZ has been designed to minimize losses in Max rDS(on) = 10 m at VGS = -10 V, ID = -11.5 Aload switch applications. Advancements in both silicon and Max rDS(on) = 18 m at VGS = -4.5 V, ID = -8.5 Apackage technologies have been combined to offer the lowest rD

February 2015FDMC6688PP-Channel PowerTrench MOSFET-20 V, -56 A, 6.5 mFeatures General Description Max rDS(on) = 6.5 m at VGS = -4.5 V, ID = -14 AThis P-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has Max rDS(on) = 9.8 m at VGS = -2.5 V, ID = -11 Abeen optimized for rDS(ON), switching performance and Max rDS(on) =

June 2006tmFDC608PZ P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced 5.8 A, 20 V. RDS(ON) = 30 m @ VGS = 4.5 V using Fairchild Semiconductors advanced RDS(ON) = 43 m @ VGS = 2.5 V PowerTrench process that has been especially tailored to minimize the on-state resistance and ye

April 2001 FDC645N N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 5.5 A, 30 V. RDS(ON) = 30 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 26 m @ VGS = 10 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for

April 2001 FDC645N N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 5.5 A, 30 V. RDS(ON) = 30 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 26 m @ VGS = 10 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for

October 2013FDMC612PZP-Channel PowerTrench MOSFET -20 V, -14 A, 8.4 mFeatures General Description Max rDS(on) = 8.4 m at VGS = -4.5 V, ID = -14 AThis P-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has Max rDS(on) = 13 m at VGS = -2.5 V, ID = -11 Abeen optimized for rDS(ON), switching performance and High performan

April 2001 FDC602P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged 5.5 A, 20 V R = 35 m @ V = 4.5 V DS(ON) GSgate version of Fairchilds advanced PowerTrench R = 50 m @ V = 2.5 V DS(ON) GSprocess. It has been optimized for power management applications with a wide range of

November 2013FDMC610P P-Channel PowerTrench MOSFET -12 V, -80 A, 3.9 mFeatures General Description Max rDS(on) = 3.9 m at VGS = -4.5 V, ID = -22 A This P-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 6.4 m at VGS = -2.5 V, ID = -16 Aringing of DC/DC converters using either synchronous or Stat

November 1999FDC637ANSingle N-Channel, 2.5V Specified PowerTrenchTM MOSFETGeneral DescriptionFeaturesThis N-Channel 2.5V specified MOSFET is produced 6.2 A, 20 V. RDS(on) = 0.024 @ VGS = 4.5 Vusing Fairchild Semiconductor's advancedPowerTrench process that has been especially tailored RDS(on) = 0.032 @ VGS = 2.5 Vto minimize on-state resistance and yet maintain lo

September 2001 FDC638P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P 2.5V specified MOSFET is produced -Channel 4.5 A, 20 V. R = 48 m @ V = 4.5 V DS(ON) GSusing Fairchild Semiconductors advanced R = 65 m @ V = 2.5 V DS(ON) GSPowerTrench process that has been especially tailored to minimize the on-state resistanc

March 1999 FDC6323LIntegrated Load Switch General Description FeaturesVDROP=0.2V @ VIN=5V, IL=1A, VON/OFF= 1.5V to 8VThese Integrated Load Switches are produced usingVDROP=0.3V @ VIN=3.3V, IL=1A, VON/OFF= 1.5V to 8V.Fairchild's proprietary, high cell density, DMOStechnology. This very high density process isHigh density cell design for extremely low on-resistance.especially

March 1999FDC6305NDual N-Channel 2.5V Specified PowerTrenchTM MOSFETGeneral Description Features 2.7 A, 20 V. RDS(ON) = 0.08 @ VGS = 4.5 VThese N-Channel low threshold 2.5V specifiedMOSFETs are produced using Fairchild Semiconductor'sRDS(ON) = 0.12 @ VGS = 2.5 Vadvanced PowerTrench process that has beenespecially tailored to minimize on-state resistance and Low

December 2001 FDC606P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses 6 A, 12 V. RDS(ON) = 26 m @ VGS = 4.5 V Fairchilds low voltage PowerTrench process. It has RDS(ON) = 35 m @ VGS = 2.5 V been optimized for battery power management RDS(ON) = 53 m @ VGS = 1.8 V

BC63916Switching and Amplifier ApplicationsTO-9211. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCER Collector-Emitter Voltage at RBE=1K 100 VVCES Collector-Emitter Voltage 100 VVCEO Collector-Emitter Voltage 80 VVEBO Emitter-Base Voltage 5 VIC Collector Current 1 AP

September 2010FDMC6675BZP-Channel Power Trench MOSFET -30 V, -20 A, 14.4 m Features General Description Max rDS(on) = 14.4 m at VGS = -10 V, ID = -9.5 A The FDMC6675BZ has been designed to minimize losses in load switch applications. Advancements in both silicon and Max rDS(on) = 27.0 m at VGS = -4.5 V, ID = -6.9 Apackage technologies have been combined to offer the lowest

June 1998 FDC655AN Single N-Channel, Logic Level, PowerTrenchTM MOSFET General Description FeaturesThis N-Channel Logic Level MOSFET is produced using6.3 A, 30 V. RDS(ON) = 0.027 @ VGS = 10 VFairchild Semiconductor's advanced PowerTrench process RDS(ON) = 0.035 @ VGS = 4.5 V.that has been especially tailored to minimize on-stateFast switching.resistance and yet main

January 2001FDC6312PDual P-Channel 1.8V PowerTrench Specified MOSFETGeneral Description FeaturesThese P-Channel 1.8V specified MOSFETs are 2.3 A, 20 V. RDS(ON) = 115 m @ VGS = 4.5 Vproduced using Fairchild Semiconductor's advancedRDS(ON) = 155 m @ VGS = 2.5 VPowerTrench process that has been especially tailoredRDS(ON) = 225 m @ VGS =

November 2011FDC658APSingle P-Channel Logic Level PowerTrench MOSFET-30V, -4A, 50m General Description FeaturesThis P-Channel Logic Level MOSFET is produced using Max rDS(on) = 50 m @ VGS = -10 V, ID = -4AFairchild's advanced PowerTrench process. It has been optimized for battery power management applications. Max rDS(on) = 75 m @ VGS = -4.5 V, ID = -3.4AApplications

February 1999FDC6306PDual P-Channel 2.5V Specified PowerTrench MOSFETFeaturesGeneral DescriptionThese P-Channel 2.5V specified MOSFETs are produced -1.9 A, -20 V. RDS(on) = 0.170 @ VGS = -4.5 Vusing Fairchild Semiconductor's advanced PowerTrenchRDS(on) = 0.250 @ VGS = -2.5 Vprocess that has been especially tailored to minimizeon-state resistance and yet maintain

January 2004 FDC699P P-Channel 2.5V PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged 7 A, 20 V RDS(ON) = 22 m @ VGS = 4.5 V gate version of Fairchild Semiconductors advanced RDS(ON) = 30 m @ VGS = 2.5 V PowerTrench process. It has been optimized for power management applications with a wide range of g

April 2002 FDC6392S 20V Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features MOSFET: The FDC6392S combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a 2.2 A, 20V. RDS(ON) = 150 m @ VGS = 4.5V very low forward voltage drop Schottky barrier rectifier RDS(ON) = 200 m @ VGS

July 1997 FDC6304P Digital FET, Dual P-Channel General Description Features-25 V, -0.46 A continuous, -1.0 A Peak.These P-Channel enhancement mode field effect transistor areproduced using Fairchild's proprietary, high cell density, DMOS RDS(ON) = 1.5 @ VGS= -2.7 Vtechnology. This very high density process is tailored to minimizeRDS(ON) = 1.1 @ VGS = -4.5 V.on-state

June 2009FDC642P_F085P-Channel PowerTrench MOSFET-20V, -4A, 100m Applications Features Load switch Typ rDS(on) = 52.5m at VGS = -4.5V, ID = -4A Battery protection Typ rDS(on) = 75.3m at VGS = -2.5V, ID = -3.2A Power management Fast switching speed Low gate charge(6.9nC typical) High performance trench technology for extremely low rDS(on) SuperSOTTM-6

January 2004 FDC697P P-Channel 1.8V PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses 8 A, 20 V RDS(ON) = 20 m @ VGS = 4.5 V Fairchilds advanced low voltage Power TrenchRDS(ON) = 25 m @ VGS = 2.5 V process. It has been optimized for battery power RDS(ON) = 35 m @ VGS = 1.8 V management applications.

October 2001FDC6401NDual N-Channel 2.5V Specified PowerTrench MOSFETGeneral Description FeaturesThis Dual N-Channel MOSFET has been designed 3.0 A, 20 V. RDS(ON) = 70 m @ VGS = 4.5 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 95 m @ VGS = 2.5 Vconverters using either synchronous or conventionalswitching PWM controllers. It has been optimiz

December 2006FDC638APZP-Channel 2.5V PowerTrench Specified MOSFET 20V, 4.5A, 43mFeatures General Description Max rDS(on) = 43m at VGS = 4.5V, ID = 4.5AThis P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process Max rDS(on) = 68m at VGS = 2.5V, ID = 3.8Athat has been especially tailored to minim

January 2010FDC655BNtmSingle N-Channel, Logic Level, PowerTrench MOSFET 30 V, 6.3 A, 25 mFeatures General Description Max rDS(on) = 25 m at VGS = 10 V, ID = 6.3 AThis N-Channel Logic Level MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process Max rDS(on) = 33 m at VGS = 4.5 V, ID = 5.5 Athat has been especially tailored to minimize t

October 1997 FDC6320C Dual N & P Channel , Digital FET General Description FeaturesThese dual N & P Channel logic level enhancement mode fieldN-Ch 25 V, 0.22 A, RDS(ON) = 5 @ VGS= 2.7 V.effec transistors are produced using Fairchild's proprietary,high cell density, DMOS technology. This very high density P-Ch 25 V, -0.12 A, RDS(ON) = 13 @ VGS= -2.7 V.process is especial

February 2015FDMC6686PP-Channel PowerTrench MOSFET-20 V, -56 A, 4 mFeatures General Description Max rDS(on) = 4 m at VGS = -4.5 V, ID = -18 AThis P-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has Max rDS(on) = 5.7 m at VGS = -2.5 V, ID = -16 Abeen optimized for rDS(ON), switching performance and Max rDS(on) =11.5

April 2001 FDC6310P Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features These P-Channel 2.5V specified MOSFETs are 2.2 A, 20 V. R = 125 m @ V = 4.5 V DS(ON) GSproduced using Fairchild Semiconductor's advanced R = 190 m @ V = 2.5 V DS(ON) GSPowerTrench process that has been especially tailored to minimize on-state resistance

April 1999 FDC6321C Dual N & P Channel , Digital FET General Description FeaturesThese dual N & P Channel logic level enhancement modeN-Ch 25 V, 0.68 A, RDS(ON) = 0.45 @ VGS= 4.5 Vfield effect transistors are produced using Fairchild'sproprietary, high cell density, DMOS technology. This very P-Ch -25 V, -0.46 A, RDS(ON) = 1.1 @ VGS= -4.5 V.high density process is especi

October 1997 FDC6302P Digital FET, Dual P-Channel General Description FeaturesThese Dual P-Channel logic level enhancement mode field effect -25 V, -0.12 A continuous, -0.5 A Peak.transistors are produced using Fairchild's proprietary, high cell RDS(ON) = 13 @ VGS= -2.7 Vdensity, DMOS technology. This very high density process is RDS(ON) = 10 @ VGS = -4.5 V.especially

May 2003 FDC654P Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced 3.6 A, 30 V. RDS(ON) = 75 m @ VGS = 10 V using Fairchilds advanced PowerTrench process. It RDS(ON) = 125 m @ VGS = 4.5 V has been optimized for battery power management applications. Low gate charge (6.2 nC

September 2001 FDC634P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses 3.5 A, 20 V. R = 80 m @ V = 4.5 V DS(ON) GSFairchilds low voltage PowerTrench process. It has R = 110 m @ V = 2.5 V DS(ON) GSbeen optimized for battery power management applications. Low gate charge (7.2 n

January 2001FDC640PP-Channel 2.5V PowerTrench Specified MOSFETGeneral Description FeaturesThis P-Channel 2.5V specified MOSFET uses a rugged 4.5 A, 20 V RDS(ON) = 0.053 @ VGS = 4.5 Vgate version of Fairchilds advanced PowerTrenchRDS(ON) = 0.080 @ VGS = 2.5 Vprocess. It has been optimized for power managementapplications with a wide r

September 2001FDC6420C20V N & P-Channel PowerTrench MOSFETsGeneral Description FeaturesThese N & P-Channel MOSFETs are produced using Q1 3.0 A, 20V. RDS(ON) = 70 m @ VGS = 4.5 VFairchild Semiconductors advanced PowerTrenchRDS(ON) = 95 m @ VGS = 2.5 Vprocess that has been especially tailored to minimizeon-state resistance and yet maintain superior Q2

October 2006FDMC6890NZtmDual N-Channel PowerTrench MOSFET 20V, 4A, Q1:68m, Q2:100mFeatures General DescriptionQ1: N-ChannelFDMC6890NZ is a compact single package solution for DC to DC converters with excellent thermal and switching Max rDS(on) = 68m at VGS = 4.5V, ID = 4Acharacteristics. Inside the Power 33 package features two Max rDS(on) = 100m at VGS = 2

October 2001FDC6333C30V N & P-Channel PowerTrench MOSFETsGeneral Description FeaturesThese N & P-Channel MOSFETs are produced using Q1 2.5 A, 30V. RDS(ON) = 95 m @ VGS = 10 VFairchild Semiconductors advanced PowerTrenchRDS(ON) = 150 m @ VGS = 4.5 Vprocess that has been especially tailored to minimizeon-state resistance and yet maintain superior Q2 2

July 2007FJC690NPN Epitaxial Silicon Transistor Camera Strobe Flash Application Complement to FJC790 High Collector Current Low Collector-Emitter Saturation VoltageMarking6 9 0Y W WSOT-891Weekly code1. Base 2. Collector 3. EmitterYear codehFEAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Vol

November 1997 FDC653N N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThis N-Channel enhancement mode power field effect 5 A, 30 V. RDS(ON) = 0.035 @ VGS = 10 Vtransistors is produced using Fairchild's proprietary, high cell RDS(ON) = 0.055 @ VGS = 4.5 V.density, DMOS technology. This very high density process isProprietary SuperSOTTM-6 pac

January 2001FDC640PP-Channel 2.5V PowerTrench Specified MOSFETGeneral Description FeaturesThis P-Channel 2.5V specified MOSFET uses a rugged 4.5 A, 20 V RDS(ON) = 0.053 @ VGS = 4.5 Vgate version of Fairchilds advanced PowerTrenchRDS(ON) = 0.080 @ VGS = 2.5 Vprocess. It has been optimized for power managementapplications with a wide r

February 1999 FDC658P Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description FeaturesThis P-Channel Logic Level MOSFET is produced-4 A, -30 V. RDS(ON) = 0.050 @ VGS = -10 Vusing Fairchild Semiconductor's advanced RDS(ON) = 0.075 @ VGS = -4.5 V.PowerTrench process that has been especially tailoredto minimize the on-state resistance and yet maintainLo

November 2010FDMC6296Single N-Channel Logic-Level Power Trench MOSFET 30 V, 11.5 A, 10.5 mFeatures General Description Max rDS(on) = 10.5 m at VGS = 10 V, ID = 11.5 A This single N-Channel MOSFET in the thermally efficient MicroFET Package has been specifically designed to perform Max rDS(on) = 15 m at VGS = 4.5 V, ID = 10 Awell in Point of Load converters. Providing an

January 2010FDC642PSingle P-Channel 2.5V Specified PowerTrench MOSFET -20 V, -4.0 A, 65 mFeatures General Description Max rDS(on) = 65 m at VGS = -4.5 V, ID = -4.0 AThis P-Channel 2.5V specified MOSFET is produced using Fairchilds advanced PowerTrench process that has been Max rDS(on) = 100 m at VGS = -2.5 V, ID = -3.2 Aespecially tailored to minimize on-state

April 2001 FDC602P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged 5.5 A, 20 V R = 35 m @ V = 4.5 V DS(ON) GSgate version of Fairchilds advanced PowerTrench R = 50 m @ V = 2.5 V DS(ON) GSprocess. It has been optimized for power management applications with a wide range of

BC636/638/640Switching and Amplifier Applications Complement to BC635/637/639TO-9211. Emitter 2. Collector 3. BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCER Collector-Emitter Voltage at RBE=1K : BC636 -45 V: BC638 -60 V: BC640 -100 VVCES Collector-Emitter Voltage : BC636 -45 V: BC6

November 1998 FDC6329LIntegrated Load Switch General Description FeaturesThis device is particularly suited for compact powerVDROP=0.2V @ VIN=5V, IL=2.8A. R(ON) = 0.07 VDROP=0.2Vmanagement in portable electronic equipment where@ VIN=2.5V, IL=1.9A. R(ON) = 0.105.2.5V to 8V input and 2.5A output current capability areneeded. This load switch integrates a small N-Channel

September 2001 FDC6301N Dual N-Channel , Digital FETGeneral Description Features25 V, 0.22 A continuous, 0.5 A Peak.These dual N-Channel logic level enhancement mode fieldeffect transistors are produced using Fairchild 's proprietary, RDS(ON) = 5 @ VGS= 2.7 Vhigh cell density, DMOS technology. This very high densityRDS(ON) = 4 @ VGS= 4.5 V.process is especially tailo

July 1999FDC6308PDual P-Channel 2.5V Specified PowerTrenchTM MOSFETGeneral Description FeaturesThis P-Channel 2.5V specified MOSFET is a rugged -1.7 A, -18 V. RDS(ON) = 0.18 @ VGS = -4.5 Vgate version of Fairchild Semiconductor's advancedRDS(ON) = 0.30 @ VGS = -2.5 VPowerTrench process. It has been optimized for powermanagement applications with a wide range of gate

July 2000FDC6327CDual N & P-Channel 2.5V Specified PowerTrenchTM MOSFETFeaturesGeneral DescriptionThese N & P-Channel 2.5V specified MOSFETs are N-Channel 2.7A, 20V. RDS(on) = 0.08 @ VGS = 4.5Vproduced using Fairchild Semiconductor's advancedRDS(on) = 0.12 @ VGS = 2.5VPowerTrench process that has been especially tailoredto minimize on-state resistance and yet mainta

March 1998 FDC633N N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThis N-Channel enhancement mode power field effect5.2 A, 30 V. RDS(ON) = 0.042 @ VGS = 4.5 Vtransistors is produced using Fairchild's proprietary, high cellRDS(ON) = 0.054 @ VGS = 2.5 V.density, DMOS technology. This very high density process istailored to minimize on-stat

December 2001 FDC6318P Dual P-Channel 1.8V PowerTrench Specified MOSFET General Description Features These P-Channel 1.8V specified MOSFETs are 2.5 A, 12 V. RDS(ON) = 90 m @ VGS = 4.5 V produced using Fairchild Semiconductor's advanced RDS(ON) = 125 m @ VGS = 2.5 V PowerTrench process that has been especially tailored RDS(ON) = 200 m

August 1997 FDC6303N Digital FET, Dual N-ChannelGeneral Description Features25 V, 0.68 A continuous, 2 A Peak.These dual N-Channel logic level enhancement mode fieldRDS(ON) = 0.6 @ VGS = 2.7 Veffect transistors are produced using Fairchild's proprietary,high cell density, DMOS technology. This very high density RDS(ON) = 0.45 @ VGS= 4.5 V.process is especially tailored

May 1998 FDC636P P-Channel Logic Level Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese P-Channel logic level enhancement mode power-2.8 A, -20 V. RDS(ON) = 0.130 @ VGS = -4.5 Vfield effect transistors are produced using Fairchild's RDS(ON) = 0.180 @ VGS = -2.5 V.proprietary, high cell density, DMOS technology. This veryhigh density process is

March 1996 NDC651N N-Channel Logic Level Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese N-Channel logic level enhancement mode power field3.2A, 30V. RDS(ON) = 0.09 @ VGS = 4.5Veffect transistors are produced using Fairchild's proprietary, RDS(ON) = 0.06 @ VGS = 10V.high cell density, DMOS technology. This very high densityprocess is tailored t

June 2004 FDC6000NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged 6.5 A, 20 V RDS(ON) = 20 m @ VGS = 4.5 V gate version of Fairchild's Semiconductors advanced RDS(ON) = 28 m @ VGS = 2.5 V PowerTrench process. It has been optimized for power management applications with a wide ran

January 2004 FDC697P P-Channel 1.8V PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses 8 A, 20 V RDS(ON) = 20 m @ VGS = 4.5 V Fairchilds advanced low voltage Power TrenchRDS(ON) = 25 m @ VGS = 2.5 V process. It has been optimized for battery power RDS(ON) = 35 m @ VGS = 1.8 V management applications.

March 2009BC638PNP Epitaxial Silicon TransistorSwitching and Amplifier Applications Complement to BC637TO-9211. Emitter 2. Collector 3. BaseAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCER Collector-Emitter Voltage at RBE=1K -60 VVCES Collector-Emitter Voltage -60 VVCEO Collector-Emitter Voltage -60 VVEBO Emitter-Base Volt

March 2009BC640PNP Epitaxial Silicon TransistorSwitching and Amplifier Applications Complement to BC639TO-9211. Emitter 2. Collector 3. BaseAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCER Collector-Emitter Voltage at RBE=1K -100 VVCES Collector-Emitter Voltage -100 VVCEO Collector-Emitter Voltage -80 VVEBO Emitter-Base Vo

August 2007FDC610PZtmP-Channel PowerTrench MOSFET 30V, 4.9A, 42mFeatures General Description Max rDS(on) = 42m at VGS = 10V, ID = 4.9AThis P-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has Max rDS(on) = 75m at VGS = 4.5V, ID = 3.7Abeen especially tailored to minimize the on-state resistance and

March 1999 FDC6324LIntegrated Load Switch General Description FeaturesThese Integrated Load Switches are produced using Fairchild's VDROP=0.2V @ VIN=12V, IL=1A, VON/OFF=1.5 to 8V proprietary, high cell density, DMOS technology. This very highVDROP=0.3V @ VIN=5V, IL=1A, VON/OFF=1.5 to 8V.density process is especially tailored to minimize on-stateHigh density cell design for extr

January 2001FDC604PP-Channel 1.8V Specified PowerTrench MOSFETGeneral Description FeaturesThis P-Channel 1.8V specified MOSFET uses 5.5 A, 20 V. RDS(ON) = 33 m @ VGS = 4.5 VFairchilds low voltage PowerTrench process. It hasRDS(ON) = 43 m @ VGS = 2.5 Vbeen optimized for battery power managementRDS(ON) = 60 m @ VGS = 1.8 Vapplica

February 1999FDC6506PDual P-Channel Logic Level PowerTrench MOSFETFeaturesGeneral DescriptionThese P-Channel logic level MOSFETs are produced using -1.8 A, -30 V. RDS(on) = 0.170 @ VGS = -10 VFairchild Semiconductor's advanced PowerTrenchRDS(on) = 0.280 @ VGS = -4.5 Vprocess that has been especially tailored to minimizeon-state resistance and yet maintain low g

September 2007FDC637BNZtmN-Channel 2.5V Specified PowerTrench MOSFET 20V, 6.2A, 24mFeatures General Description Max rDS(on) = 24m at VGS = 4.5V, ID = 6.2A This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process Max rDS(on) = 32m at VGS = 2.5V, ID = 5.2Athat has been especially tailored to minimize the on-sta

March 2009BC636PNP Epitaxial Silicon TransistorSwitching and Amplifier Applications Complement to BC635TO-9211. Emitter 2. Collector 3. BaseAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCER Collector-Emitter Voltage at RBE=1K -45 VVCES Collector-Emitter Voltage -45 VVCEO Collector-Emitter Voltage -45 VVEBO Emitter-Base Volt

February 2009 FDC6036P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This dual P-Channel 1.8V specified MOSFET uses 5 A, 20 V. RDS(ON) = 44 m @ VGS = 4.5 V Fairchilds advanced low voltage PowerTrench process. RDS(ON) = 64 m @ VGS = 2.5 V Packaged in FLMP SSOT-6, the RDS(ON) and thermal RDS(ON) = 95 m @ VGS = 1.8 V

BCP69; BC869; BC69PA20 V, 2 A PNP medium power transistorsRev. 7 12 October 2011 Product data sheet1. Product profile1.1 General descriptionPNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages.Table 1. Product overviewType number[1] Package NPN complementNXP JEITA JEDECBCP69 SOT223 SC-73 - BCP68BC869 SOT89 SC-62 TO-243 BC868BC69PA SOT1061

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

BCP68; BC868; BC68PA20 V, 2 A NPN medium power transistorsRev. 8 18 October 2011 Product data sheet1. Product profile1.1 General descriptionNPN medium power transistor series in Surface-Mounted Device (SMD) plastic packages.Table 1. Product overviewType number[1] Package PNP complementNexperia JEITA JEDECBCP68 SOT223 SC-73 - BCP69BC868 SOT89 SC-62 TO-243 BC869BC68PA SO

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

BC640; BCP53; BCX5380 V, 1 A PNP medium power transistorsRev. 08 22 February 2008 Product data sheet1. Product profile1.1 General descriptionPNP medium power transistor series.Table 1. Product overviewType number[1] Package NPN complementNXP JEITA JEDECBC640[2] SOT54 SC-43A TO-92 BC639BCP53 SOT223 SC-73 - BCP56BCX53 SOT89 SC-62 TO-243 BCX56[1] Valid for all available

BCP69; BC869; BC69PA20 V, 2 A PNP medium power transistorsRev. 7 12 October 2011 Product data sheet1. Product profile1.1 General descriptionPNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages.Table 1. Product overviewType number[1] Package NPN complementNexperia JEITA JEDECBCP69 SOT223 SC-73 - BCP68BC869 SOT89 SC-62 TO-243 BC868BC69PA SO

BC69PAS series20 V, 2 A PNP medium power transistorsRev. 1 19 June 2015 Product data sheet1. Product profile1.1 General descriptionPNP medium power transistors in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads.NPN complement: BC68PAS series1.2 Features and ben

BC68PAS series20 V, 2 A NPN medium power transistorsRev. 1 19 June 2015 Product data sheet1. Product profile1.1 General descriptionNPN medium power transistors in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads.PNP complement: BC69PAS series1.2 Features and ben

BC636/638/640 PNP EPITAXIAL SILICON TRANSISTORSWITCHING AND AMPLIFIER APPLICATIONS Complement to BC635/637/639TO-92ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector Emitter Voltage :BC636 VCER -45 Vat RBE=1Kohm :BC638 -60 V:BC640 -100 VCollector Emitter Voltage :BC636 VCES -45 V:BC638 -60 V:BC640 -100 VCollector Emitter Voltage :BC636 VCE

DTC623TU / DTC623TK Transistors Digital transistors (built-in resistor) DTC623TU / DTC623TK External dimensions (Unit : mm) Features In addition to the features of regular digital transistors. 2.00.2UMT31) Low saturation voltage, typically 1.30.1 0.90.10.65 0.65VCE (sat) =40mV at IC / IB=50mA / 2.5mA, makes these 0.2 0.70.1(1) (2)transistors ideal

DTC614TU / DTC614TK Transistors Digital transistors (built-in resistor) DTC614TU / DTC614TK External dimensions (Unit : mm) Features In addition to the features of regular digital transistors. 2.00.2UMT31) Low saturation voltage, typically 1.30.1 0.90.1VCE (sat) =40mV at IC / IB=50mA / 2.5mA, makes these 0.65 0.650.2 0.70.1(1) (2)transistors ideal

FMC6ATransistorsTransistorsIMD1A(94S-830-AC115E)(96-458-AC124T)575

2SC6114 Transistors Small signal low frequency amplifier (50V, 100mA) 2SC6114 Applications VMN3Small signal low frequency amplifier Features 0.220.16(3)1) Low Cob. Cob=2.0pF (Typ.) 2) Complements the 2SA2199. (1) (2) Structure 0.370.170.35NPN silicon epitaxial 0.6planar transistor (1) Base(2) EmitterAbbreviated symbol : N(3) Collector Dimensio

DTC643TU / DTC643TK Transistors Digital transistors (built-in resistor) DTC643TU / DTC643TK External dimensions (Unit : mm) Features In addition to the features of regular digital transistors. 2.00.2UMT31) Low saturation voltage, typically 1.30.1 0.90.10.65 0.65VCE (sat) =40mV at IC / IB=50mA / 2.5mA, makes these 0.2 0.70.1(1) (2)transistors ideal

DTC623TU / DTC623TK Transistors Digital transistors (built-in resistor) DTC623TU / DTC623TK External dimensions (Unit : mm) Features In addition to the features of regular digital transistors. 2.00.2UMT31) Low saturation voltage, typically 1.30.1 0.90.10.65 0.65VCE (sat) =40mV at IC / IB=50mA / 2.5mA, makes these 0.2 0.70.1(1) (2)transistors ideal

DTC614TU / DTC614TK Transistors Digital transistors (built-in resistor) DTC614TU / DTC614TK External dimensions (Unit : mm) Features In addition to the features of regular digital transistors. 2.00.2UMT31) Low saturation voltage, typically 1.30.1 0.90.1VCE (sat) =40mV at IC / IB=50mA / 2.5mA, makes these 0.65 0.650.2 0.70.1(1) (2)transistors ideal

IRFPC60LC, SiHFPC60LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 600Available Reduced Gate Drive RequirementRDS(on) ()VGS = 10 V 0.40 Enhanced 30 V VGS RatingRoHS*COMPLIANT Reduced Ciss, Coss, CrssQg (Max.) (nC) 120 Isolated Central Mounting HoleQgs (nC) 29 Dynamic dV/dt RatedQgd (nC) 48 Repetitive

IRFPC60, SiHFPC60Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.40 Isolated Central Mounting HoleRoHS*Qg (Max.) (nC) 210COMPLIANT Fast SwitchingQgs (nC) 26 Ease of ParallelingQgd (nC) 110 Simple Drive RequirementsConfiguration Single Compl

IRFPC60, SiHFPC60Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.40 Isolated Central Mounting HoleRoHS*Qg (Max.) (nC) 210COMPLIANT Fast SwitchingQgs (nC) 26 Ease of ParallelingQgd (nC) 110 Simple Drive RequirementsConfiguration Single Compl

IRFPC60LC, SiHFPC60LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 600Available Reduced Gate Drive RequirementRDS(on) ()VGS = 10 V 0.40 Enhanced 30 V VGS RatingRoHS*COMPLIANT Reduced Ciss, Coss, CrssQg (Max.) (nC) 120 Isolated Central Mounting HoleQgs (nC) 29 Dynamic dV/dt RatedQgd (nC) 48 Repetitive

A Product Line ofDiodes IncorporatedZXTC6719MCDUAL 50V NPN & 40V PNP LOW SATURATION TRANSISTOR COMBINATION Features and Benefits Mechanical Data NPN Transistor Case: DFN3020B-8 BVCEO > 50V Case material: Molded Plastic. Green Molding Compound. IC = 4A Continuous Collector Current Terminals: Pre-Plated NiPdAu leadframe. Low Saturation Voltage (100

ZXMC6A09DN8COMPLEMENTARY 60V ENHANCEMENT MODE MOSFETSUMMARYN-Channel V(BR)DSS = 60V; RDS(ON) = 0.045 ; ID= 5.1AP-Channel V(BR)DSS = -60V; RDS(ON) = 0.055 ; ID= -4.8ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage,

ZXMHC6A07T8COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGESUMMARYN-Channel V(BR)DSS = 60V; RDS(ON) = 0.300 ; ID= 1.8AP-Channel V(BR)DSS = -60V; RDS(ON) = 0.425 ; ID= -1.5ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low

DMC6040SSDCOMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Input Capacitance IDDevice V(BR)DSS RDS(on) max Low On-ResistanceTA = +25C 40m @ VGS = 10V 6.5 A Fast Switching Speed Q1 60V N-Channel 55m @ VGS = 4.5V 5.6 A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 110m @ VGS = -10V -3.9 A Q2 H

A Product Line ofDiodes IncorporatedZXTC6717MCCOMPLEMENTARY 15V NPN & 12V PNP LOW SATURATION TRANSISTOR Features Mechanical Data NPN Transistor Case: W-DFN3020-8 Type B BVCEO > 15V Nominal package height: 0.8mm IC = 4.5A Continuous Collector Current Case material: molded plastic. Green molding compound. Low Saturation Voltage (100mV max @ 1A)

A Product Line ofDiodes IncorporatedZXTC6720MCDUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION Features and Benefits Mechanical Data NPN Transistor Case: DFN3020B-8 BVCEO > 80V Case Material: Molded Plastic. Green Molding Compound. IC = 3.5A Continuous Collector Current Terminals: Pre-Plated NiPdAu leadframe. Low Saturation Voltage (1

A Product Line of Diodes Incorporated ZXMHC6A07N8 60V SO8 Complementary enhancement mode MOSFET H-Bridge Summary ID Device V(BR)DSS QG RDS(on) TA= 25C 0.25 @ VGS= 10V 1.8A N-CH 60V 3.2nC0.35 @ VGS= 4.5V 1.5A 0.40 @ VGS= -10V -1.4A P-CH -60V 5.1nC0.60 @ VGS= -4.5V -1.2A P1S/P2S Description This new generation complementary MOSFET H-Bridge features

A Product Line ofDiodes IncorporatedZXTC6718MCCOMPLEMENTARY DUAL 20V LOW SATURATION TRANSISTORS Features and Benefits Mechanical Data NPN Transistor Case: DFN3020B-8 BVCEO > 20V Case material: Molded Plastic. Green Molding Compound. IC = 4.5A Continuous Collector Current Terminals: Pre-Plated NiPdAu leadframe. Low Saturation Voltage (150mV max @

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6650V CoolMOS C6 Power TransistorIPx65R190C6 Data SheetRev. 2.0, 2011-05-09Final Industrial & Multimarket650V CoolMOS C6 Power Transistor IPA65R190C6, IPB65R190C6IPI65R190C6, IPP65R190C6IPW65R190C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accordi

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R160C6Data SheetRev. 2.3FinalPower Management & Multimarket600V CoolMOS C6 Power Transistor IPA60R160C6, IPB60R160C6IPP60R160C6 IPW60R160C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunct

MOSFET+

SIGC61T60NC IGBT Chip in NPT-technology CFEATURES: This chip is used for: 600V NPT technology 100m chip IGBT-Modules short circuit prove positive temperature coefficient Applications: G easy paralleling E drives Chip Type VCE ICn Die Size Package Ordering Code Q67050-A4160-SIGC61T60NC 600V 75A 6.99 x 8.79 mm2 sawn on foil A001 MECHAN

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6650V CoolMOS C6 Power TransistorIPx65R380C6 Data SheetRev. 2.1, 2011-02-17Final Industrial & Multimarket650V CoolMOS C6 Power Transistor IPD65R380C6, IPI65R380C6IPB65R380C6, IPP65R380C6IPA65R380C61 DescriptionCoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accord

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R600C6Data SheetRev. 2.5FinalPower Management & Multimarket600V CIMOS C6 Pwer Transistr IPD60R600C6, IPB60R600C6IPP60R600C6, IPA60R600C61 DescriptinCoolMOS is a revolutionary technology for high voltage powerMOSFETs designed according to the super

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPP60R1K4C6Data SheetRev. 2.0FinalIndustrial & Multimarket600V CoolMOS C6 Power TransistorIPP60R1K4C6TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpione

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6600V CoolMOS C6 Power TransistorIPx60R950C6 Data SheetRev. 2.1, 2010-03-11FinalIndustrial & Multimarket600V CoolMOS C6 Power Transistor IPD60R950C6, IPB60R950C6IPP60R950C6, IPA60R950C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the supe

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6650V CoolMOS C6 Power TransistorIPL65R1K0C6SData SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C6 Power TransistorIPL65R1K0C6SThinPAK 5x61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle an

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6600V CoolMOS C6 Power TransistorIPx60R190C6Data SheetRev. 2.1, 2010-02-09FinalIndustrial & Multimarket600V CoolMOS C6 Power Transistor IPA60R190C6, IPB60R190C6IPI60R190C6, IPP60R190C6IPW60R190C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according

MO Met l Oxi e emi n t iel e t n i t C lMO C665 C lMO C6 e n i t I x65 280C6D t eetRev. 2.1 in l e M n ement & M ltim ket , ==:$&)G '=D3?*?/

MOSFET+ =L9D - PA

MOSFET+ =L9D - PA

MOSFET+ =L9D - PA;%'*H (>E4@ +@0=A8AB>@ "( ) "(" ) "( ) "(( ) IPA65R600C61 Descriptin!GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J+ - 1$#2K

MOSFET+ =L9D - PA

MOSFET+ =L9D - PA

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 650V 650V CoolMOS C6 Power TransistorIPD65R250C6Data SheetRev. 2.1FinalIndustrial & Multimarket650V CoolMOS C6 Power TransistorIPD65R250C6DPAK1 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpionee

BSC600N25NS3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesVDS 250 V N-channel, normal levelRDS(on),max 60mW Excellent gate charge x R product (FOM)DS(on)ID 25 A Very low on-resistance RDS(on) Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Halogen-free according to IEC61249-2-21 Ideal for high-

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6600V CoolMOS C6 Power TransistorIPx60R190C6 Data SheetRev. 2.1, 2010-02-09Final Industrial & Multimarket600V CoolMOS C6 Power Transistor IPA60R190C6, IPB60R190C6IPI60R190C6, IPP60R190C6IPW60R190C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accordi

MOSFET+ =L9D - PA;%'*H (>E4@ +@0=A8AB>@ "( ) "(" ) "( ) "(( ) IPA65R380C61 Descriptin!GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J+ - 1$#2K

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 650V 650V CoolMOS C6 Power TransistorIPW65R037C6Data SheetRev. 2.0FinalIndustrial & Multimarket650V CoolMOS C6 Power TransistorIPW65R037C6TO-2471 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpion

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6600V CoolMOS C6 Power TransistorIPx60R950C6 Data SheetRev. 2.1, 2010-03-11FinalIndustrial & Multimarket600V CoolMOS C6 Power Transistor IPD60R950C6, IPB60R950C6IPP60R950C6, IPA60R950C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the supe

SIGC68T170R3E IGBT3 Power Chip Features: This chip is used for: 1700V Trench & Field Stop technology power modules C low turn-off losses short tail current Applications: positive temperature coefficient drives easy parallelingG E Chip Type VCE IC Die Size PackageSIGC68T170R3E 1700V 50A 8.23 x 8.25 mm2 sawn on foil Mechanical Parameters Ra

SIGC68T170R3E IGBT3 Power Chip Features: This chip is used for: 1700V Trench & Field Stop technology power modules C low turn-off losses short tail current Applications: positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package SIGC68T170R3E 1700V 50A 8.23 x 8.25 mm2 sawn on foil Mechanical Parameters

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6600V CoolMOS C6 Power TransistorIPx60R160C6Data SheetRev. 2.1, 2010-02-09FinalIndustrial & Multimarket600V CoolMOS C6 Power Transistor IPA60R160C6, IPB60R160C6IPP60R160C6 IPW60R160C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superj

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPD60R3K3C6Data SheetRev. 2.3FinalIndustrial & Multimarket +

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6600V CoolMOS C6 Power TransistorIPx60R160C6Data SheetRev. 2.1, 2010-02-09FinalIndustrial & Multimarket600V CoolMOS C6 Power Transistor IPA60R160C6, IPB60R160C6IPP60R160C6 IPW60R160C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superj

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPU60R950C6Data SheetRev. 2.1FinalIndustrial & Multimarket600V CoolMOS C6 Power TransistorIPU60R950C6IPAK1 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneer

MOSFET+ =L9D - PA;%'*H (>E4@ +@0=A8AB>@ "( ) "(" ) "( ) "(( ) IPA65R600C61 Descriptin!GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J+ - 1$#2K

MOSFET+

MOSFET+ =L9D - PA

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6600V CoolMOS C6 Power TransistorIPx60R190C6Data SheetRev. 2.1, 2010-02-09FinalIndustrial & Multimarket600V CoolMOS C6 Power Transistor IPA60R190C6, IPB60R190C6IPI60R190C6, IPP60R190C6IPW60R190C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6600V CoolMOS C6 Power TransistorIPx60R950C6 Data SheetRev. 2.1, 2010-03-11FinalIndustrial & Multimarket600V CoolMOS C6 Power Transistor IPD60R950C6, IPB60R950C6IPP60R950C6, IPA60R950C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the supe

MOSFET+ =L9D - PA

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6650V CoolMOS C6 Power TransistorIPW65R070C6 Data SheetRev. 2.0, 2011-03-15Final Industrial & Multimarket650V CoolMOS C6 Power Transistor IPW65R070C61 DescriptionCoolMOS is a revolutionary technology for high voltage power MOSFETs,designed according to the superjunction (SJ) principle and pioneered

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6650V CoolMOS C6 Power TransistorIPx65R380C6 Data SheetRev. 2.1, 2011-02-17Rev. 2.2, 2013-07-31Final Industrial & Multimarket650V CoolMOS C6 Power Transistor IPD65R380C6, IPI65R380C6IPB65R380C6, IPP65R380C6IPA65R380C61 DescriptionCoolMOS is a revolutionary technology for high voltage power MO

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6650V CoolMOS C6 Power TransistorIPL65R1K5C6SData SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C6 Power TransistorIPL65R1K5C6SThinPAK 5x61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle an

MOSFET+

MOSFET+ =L9D - PA

MOSFET+

IAUC60N04S6N044OptiMOS- 6 Power-TransistorProduct SummaryVDS 40 VRDS(on),max 4.5mWID 60 AFeaturesPG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanche tested

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPU60R2K0C6Data SheetRev. 2.1FinalIndustrial & Multimarket600V CoolMOS C6 Power TransistorIPU60R2K0C6IPAK1 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneer

MOSFET+ =L9D - PA

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6600V CoolMOS C6 Power TransistorIPx60R160C6Data SheetRev. 2.1, 2010-02-09FinalIndustrial & Multimarket600V CoolMOS C6 Power Transistor IPA60R160C6, IPB60R160C6IPP60R160C6 IPW60R160C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superj

MOSFET+ =L9D - PA;%'*H (>E4@ +@0=A8AB>@ "( ) "(" ) "( ) "(( ) IPA65R600C61 Descriptin!GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J+ - 1$#2K

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPU60R600C6 Data SheetRev. 2.1FinalIndustrial & Multimarket600V CoolMOS C6 Power TransistorIPU60R600C6IPAK1 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpionee

MOSFET+ =L9D - PA

MOSFET+ =L9D - PA

MOSFET+ =L9D - PA

MOSFET+ =L9D - PA

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPU60R1K4C6Data SheetRev. 2.0FinalIndustrial & Multimarket600V CoolMOS C6 Power TransistorIPU60R1K4C6IPAK1 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneer

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 650V 650V CoolMOS C6 Power TransistorIPP65R074C6Data SheetRev. 2.1FinalIndustrial & Multimarket650V CoolMOS C6 Power TransistorIPP65R074C6TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpion

MOSFET*

MOSFET+ =L9D - PA

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 650V 650V CoolMOS C6 Power TransistorIPx65R099C6Data SheetRev. 2.0FinalIndustrial & Multimarket650V CoolMOS C6 Power TransistorIPW65R099C6, IPB65R099C6, IPP65R099C6IPA65R099C6, IPI65R099C6TO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs

MOSFET+

MOSFET+

MOSFET+ =L9D - PA;%'*H (>E4@ +@0=A8AB>@ "( ) "(" ) "( ) "(( ) IPA65R600C61 Descriptin!GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J+ - 1$#2K

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6600V CoolMOS C6 Power TransistorIPx60R160C6Data SheetRev. 2.1, 2010-02-09FinalIndustrial & Multimarket600V CoolMOS C6 Power Transistor IPA60R160C6, IPB60R160C6IPP60R160C6 IPW60R160C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superj

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R190C6Data SheetRev. 2.3FinalPower Management & Multimarket600V CoolMOS C6 Power Transistor IPA60R190C6, IPB60R190C6IPI60R190C6, IPP60R190C6IPW60R190C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to

MOSFET+ =L9D - PA

MOSFET+ =L9D - PA;%'*H (>E4@ +@0=A8AB>@ "( ) "(" ) "( ) "(( ) IPA65R380C61 Descriptin!GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J+ - 1$#2K

MOSFET+ =L9D - PA

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6600V CoolMOS C6 Power TransistorIPL60R1K5C6SData SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS C6 Power TransistorIPL60R1K5C6SThinPAK 5x61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle an

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6600V CoolMOS C6 Power TransistorIPD60 1K4C6 Data Sheet ev. 2.0 20100719Final Industrial & Multimarket600V CIMOS C6 Pwer Transistr IPD60R1K4C61 DescriptinCoolMOS is a revolutionary technology for high voltage power MOSFETs designed according to the superjunction (S ) principle and pioneer

MOSFET+ =L9D - PA

MOSFET+ =L9D - PA

MOSFET+ =L9D - PA

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6600V CoolMOS C6 Power TransistorIPx60R190C6Data SheetRev. 2.1, 2010-02-09FinalIndustrial & Multimarket600V CoolMOS C6 Power Transistor IPA60R190C6, IPB60R190C6IPI60R190C6, IPP60R190C6IPW60R190C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 650V 650V CoolMOS C6 Power TransistorIPx65R099C6Data SheetRev. 2.0FinalIndustrial & Multimarket650V CoolMOS C6 Power TransistorIPW65R099C6, IPB65R099C6, IPP65R099C6IPA65R099C6, IPI65R099C6TO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs

MOSFET+ =L9D - PA

MOSFET+ =L9D - PA

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R950C6Data SheetRev. 2.4FinalPower Management & Multimarket600V CoolMOS C6 Power Transistor IPD60R950C6, IPB60R950C6IPP60R950C6, IPA60R950C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the sup

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6600V CoolMOS C6 Power TransistorIPx60R190C6Data SheetRev. 2.1, 2010-02-09FinalIndustrial & Multimarket600V CoolMOS C6 Power Transistor IPA60R190C6, IPB60R190C6IPI60R190C6, IPP60R190C6IPW60R190C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPP60R074C6Data SheetRev. 2.0FinalIndustrial & Multimarket600V CoolMOS C6 Power TransistorIPP60R074C6TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpione

MOSFET+ =L9D - PA;%'*H (>E4@ +@0=A8AB>@ "( ) "(" ) "( ) "(( ) IPA65R380C61 Descriptin!GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J+ - 1$#2K

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6600V CoolMOS C6 Power TransistorIPx60R099C6 Data SheetRev. 2.1, 2010-02-09Final Industrial & Multimarket600V CoolMOS C6 Power Transistor IPA60R099C6, IPB60R099C6IPP60R099C6 IPW60R099C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the supe

MOSFET*

MOSFET+

MOSFET+ =L9D - PA

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6600V CoolMOS C6 Power TransistorIPL60R2K1C6SData SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS C6 Power TransistorIPL60R2K1C6SThinPAK 5x61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle an

MOSFET+ =L9D - PA

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R125C6Data SheetRev. 2.3FinalPower Management & Multimarket600V CIMOS C6 Pwer Transistr IPA60R125C6, IPB60R125C6IPP60R125C6 IPW60R125C61 DescriptinCoolMOS is a revolutionary technology for high voltage powerMOSFETs designed according to the superj

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R380C6Data SheetRev. 2.3FinalPower Management & Multimarket600V CIMOS C6 Pwer Transistr IPD60R380C6, IPI60R380C6IPB60R380C6, IPP60R380C6IPA60R380C61 DescriptinCoolMOS is a revolutionary technology for high voltage powerMOSFETs designed according

MOSFET+

IAUC60N04S6L039OptiMOS- 6 Power-TransistorProduct SummaryVDS 40 VRDS(on),max 4.0mWID 60 AFeaturesPG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanche tested

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 650V 650V CoolMOS C6 Power TransistorIPD65R950C6 Data SheetRev. 2.0FinalIndustrial & Multimarket650V CoolMOS C6 Power TransistorIPD65R950C6DPAK1 DescriptionCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle and

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6600V CoolMOS C6 Power TransistorIPx60R950C6 Data SheetRev. 2.1, 2010-03-11FinalIndustrial & Multimarket600V CoolMOS C6 Power Transistor IPD60R950C6, IPB60R950C6IPP60R950C6, IPA60R950C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the supe

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6650V CoolMOS C6 Power TransistorIPL65R650C6SData SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C6 Power TransistorIPL65R650C6SThinPAK 5x61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle an

MOSFET+ =L9D - PA;%'*H (>E4@ +@0=A8AB>@ "( ) "(" ) "( ) "(( ) IPA65R600C61 Descriptin!GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J+ - 1$#2K

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 650V 650V CoolMOS C6 Power TransistorIPS65R950C6 Data SheetRev. 2.0FinalIndustrial & Multimarket650V CoolMOS C6 Power TransistorIPS65R950C6IPAK SL1 DescriptionCoolMOS is a revolutionary technology for high voltage power MOSFETs,designed according to the superjunction (SJ) principle and pio

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6650V CoolMOS C6 Power TransistorIPx65R380C6 Data SheetRev. 2.1, 2011-02-17Final Industrial & Multimarket650V CoolMOS C6 Power Transistor IPD65R380C6, IPI65R380C6IPB65R380C6, IPP65R380C6IPA65R380C61 DescriptionCoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accord

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 650V 650V CoolMOS C6 Power TransistorIPS65R1K4C6Data SheetRev. 2.0FinalIndustrial & Multimarket650V CoolMOS C6 Power TransistorIPS65R1K4C6IPAK SL1 DescriptionCoolMOS is a revolutionary technology for high voltage power MOSFETs,designed according to the superjunction (SJ) principle and pion

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 650V 650V CoolMOS C6 Power TransistorIPD65R1K4C6Data SheetRev. 2.0FinalIndustrial & Multimarket650V CoolMOS C6 Power TransistorIPD65R1K4C6DPAK1 DescriptionCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andp

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorlPD60R2KOC6Data SheetRev. 2.1FinalIndustrial & Multimarket +

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R280C6Data SheetRev. 2.2FinalPower Management & Multimarket600V CIMOS C6 Pwer Transistr IPA60R280C6, IPB60R280C6IPI60R280C6, IPP60R280C6IPW60R280C61 DescriptinCoolMOS is a revolutionary technology for high voltage powerMOSFETs designed according

MCAC60N08YElectrical Characteristics @ 25C (Unless Otherwise Specified)Parameter Symbol Test Conditions Min Typ Max UnitStatic CharacteristicsV(BR)DSS VGS=0V, ID=250ADrain-Source Breakdown Voltage 80 VIGSS VDS=0V, VGS =20VGate-Source Leakage Current 100 nAIDSS VDS=64V, VGS=0VZero Gate Voltage Drain Current 1 AVGS(th) VDS=VGS, ID=250AGate-Threshold Voltage 2

NTTFS5C670NLPower MOSFET60 V, 6.5 mW, 70 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(on) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwi

NVMFD5C668NLMOSFET Power, DualN-Channel60 V, 6.5 mW, 68 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFD5C668NLWF - Wettable Flank Option for Enhanced Optical6.5 mW @ 10 V60 VInspection68 A9.2 mW @ 4.5 V

April 1999 FDC6561AN Dual N-Channel Logic Level PowerTrenchTM MOSFET General Description FeaturesThese N-Channel Logic Level MOSFETs are2.5 A, 30 V. RDS(ON) = 0.095 @ VGS = 10 Vproduced using Fairchild Semiconductor's advanced RDS(ON) = 0.145 @ VGS = 4.5 VPowerTrench process that has been especially tailoredto minimize the on-state resistance and yet maintain Very fas

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

DATA SHEETwww.onsemi.comPNP Epitaxial SiliconTransistorTO-92-3BC636CASE 135ARBent Lead12Features3 Switching and Amplifier Applications1. Emitter Complement to BC6352. Collector These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS3. BaseCompliantMARKING DIAGRAMABSOLUTE MAXIMUM RATINGS (Values are at TA = 25C unless otherwise noted)P

NVTFS5C680NLMOSFET Power, SingleN-Channel60 V, 26.5 mW, 20 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVTFS5C680NLWF - Wettable Flanks Product26.5 mW @ 10 V AEC-Q101 Qualified and PPAP Capable60 V 20 A The

MOSFET P-Channel,POWERTRENCH-20 V, -4 A, 100 mWFDC642P-F085,FDC642P-F085Pwww.onsemi.comFeatures Typ RDS(on) = 52.5 mW at VGS = -4.5 V, ID = -4 A Typ RDS(on) = 75.3 mW at VGS = -2.5 V, ID = -3.2 A Fast Switching Speed Low Gate Charge (6.9 nC Typical)TSOT23 6-Lead High Performance Trench Technology for Extremely Low RDS(on)CASE 419BL SUPERSOTt-6 P

MOSFET Power, Single,N-Channel60 V, 7.0 mW, 71 ANVMFS5C670NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS5C670NWF - Wettable Flank Option for Enhanced Optical60 V 7.0 mW @ 10 V 71 AInspection AEC-Q101 Qualifi

BC637, BC639, BC639-16High Current TransistorsNPN SiliconFeatures These are Pb-Free Devices* http://onsemi.comCOLLECTOR2MAXIMUM RATINGS3Rating Symbol Value UnitBASECollector - Emitter Voltage VCEO VdcBC637 601BC639 80EMITTERCollector - Base Voltage VCBO VdcBC637 60BC639 80Emitter - Base Voltage VEBO 5.0 VdcCollector Current - Continuous IC 1.0 AdcTO-

Ordering number : ENA2151AEFC6601RN-Channel Power MOSFEThttp://onsemi.com24V, 13A, 11.5m , Dual EFCPFeatures 2.5V drive Protection diode in Common-drain type Halogen free compliance 2KV ESD HBMSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitSource-to-Source Voltage VSSS 24 VGate-to-Source Voltage VGSS

NVMFS5C604NLPower MOSFET60 V, 1.2 mW, 287 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C604NLWF - Wettable Flank Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable1.2 mW

NTTFS5C658NLPower MOSFET60 V, 5.0 mW, 109 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(on) MAX ID MAX5.0 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted)60 V

FDC637ANSingle N-Channel, 2.5V Specified PowerTrenchTM MOSFETGeneral DescriptionFeaturesThis N-Channel 2.5V specified MOSFET is produced 6.2 A, 20 V. RDS(on) = 0.024 @ VGS = 4.5 Vusing ON Semiconductor's advanced PowerTrench process that has been especially tailored RDS(on) = 0.032 @ VGS = 2.5 Vto minimize on-state resistance and yet maintain low gate charge for

Ordering number : ENA2291A EFC6611R N-Channel Power MOSFET http://onsemi.com 12V, 27A, 3.2m, Dual EFCP Features 2.5V drive Common-drain type Protection diode in 2KV ESD HBM Halogen free compliance Applications Lithium-ion battery charging and discharging switch Specifications EFCP3517-6DGH-020 Absolute Maximum Ratings at Ta = 25C Paramet

NTMFS5C612NLPower MOSFET60 V, 1.5 mW, 235 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses NTMFS5C612NLWF - Wettable Flank Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compl

NTMFS5C682NLMOSFET Power, Single,N-Channel60 V, 21 mW, 25 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS21 mW @ 10 V60 V 25 ACompliant31.5 mW @ 4.5 VMA

Ordering number : ENA0435A2SC6099Bipolar Transistorhttp://onsemi.com( )100V, 2A, Low VCE sat , NPN Single TP/TP-FAApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverterFeatures Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power diss

Ordering number : ENA2302 EFC6605R N-Channel Power MOSFEThttp://onsemi.com 20V, 10A, 13.3m, Dual EFCP Features 2.5V drive Common-drain type Protection diode in 2KV ESD HBM Halogen free compliance Applications Lithium-ion battery charging and discharging switch Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions V

NVMFS5C680NLMOSFET Power, SingleN-Channel60 V, 27.5 mW, 21 AFeatures Small Footprint (5 x 6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVMFS5C680NLWF - Wettable Flanks ProductV(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable27.5 mW @ 10 V60 V 21 A These D

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Ordering number : ENA2204A EFC6604R N-Channel Power MOSFEThttp://onsemi.com 12V, 13A, 9.0m, Dual EFCP Features 2.5V drive Protection diode in Common-drain type Halogen free compliance 2KV ESD HBM Applications Lithium-ion battery charging and discharging switch Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions R

NVMFD5C650NLMOSFET Power, DualN-Channel60 V, 4.2 mW, 111 AFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFD5C650NLWF - Wettable Flank Option for Enhanced Optical4.2 mW @ 10 VInspection60 V111 A AEC-Q101 Qual

Ordering number : ENA0435A2SC6099Bipolar Transistorhttp://onsemi.com( )100V, 2A, Low VCE sat , NPN Single TP/TP-FAApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverterFeatures Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power diss

MOSFET Power, Single,N-Channel60 V, 10.7 mW, 50 ANVMFS5C673NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS5C673NWF - Wettable Flank Option for Enhanced Optical60 V 10.7 mW @ 10 V 50 AInspection AEC-Q101 Quali

NTMFS5C604NLPower MOSFET60 V, 1.2 mW, 287 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)1.2 mW @ 10 V60

MOSFET Power, Single,N-Channel60 V, 5.0 mW, 93 ANTMFS5C646NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction LossesV(BR)DSS RDS(ON) MAX ID MAX Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS60 V 5.0 mW @ 10 V 93 ACompliantMAXIMUM RATINGS (T

Ordering number : ENA2329A EFC6612R Power MOSFET http://onsemi.com 20V, 5.1m, 23A, Dual N-Channel Features 2.5V drive Common-drain type Protection diode in 2KV ESD HBM Halogen free compliance Applications Lithium-ion battery charging and discharging switch Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Valu

MOSFET - Power, SingleN-Channel60 V, 3.0 mW, 150 ANVMFS5C628NFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS5C628NWF - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(ON) MAX ID MAXInspection60 V 3.0 mW @ 10 V 150 A AEC-Q101 Qualifie

NVMFS5C638NLMOSFET Power, SingleN-Channel60 V, 3.0 mW, 133 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS5C638NLWF - Wettable Flank Option for Enhanced Optical3.0 mW @ 10 VInspection60 V 133 A AEC-Q101 Qua

Ordering number : EN8275A2SA2169/2SC6017Bipolar Transistorhttp://onsemi.com(-)50V, (-)10A, Low VCE(sat), (PNP)NPN Single TP/TP-FAApplications Relay drivers, lamp drivers, motor driversFeatures Adoption of MBIT processes Large current capacity Low collector-to-emitter saturation voltage High-speed switching( ): 2SA2169Specifications Absolute Maximum R

NTMFD5C650NLMOSFET Power, Dual,N-Channel60 V, 4.2 mW, 111 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS4.2 mW @ 10 V60 VCompliant111 A5.8 mW @ 4.5 V

MOSFET Power, DualN-Channel60 V, 11.9 mW, 40 ANVMFD5C672NLFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFD5C672NLWF - Wettable Flank Option for Enhanced Optical V(BR)DSS RDS(ON) MAX ID MAXInspection11.9 mW @ 10 V60 V40 A AEC-Q101 Quali

BC63916NPN Epitaxial Silicon TransistorFeatures Switching and Amplifier ApplicationsTO-921. Emitter2. Collector1 13. Base2233Straight Lead Bent LeadBulk Packing Tape & Reel Ammo PackingOrdering InformationPart Number Top Mark Package Packing MethodBC63916-D74Z BC639-16 TO-92 3L AmmoBC63916-D27Z BC639-16 TO-92 3L Tape and ReelAbsolute Maximum Ratings(1)

MOSFET Power, Single,N-Channel60 V, 7.0 mW, 71 ANTMFS5C670NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant60 V 7.0 mW @ 10 V 71 AMAXIMUM RATINGS (TJ = 25C unless otherwis

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

NTMFD5C674NLMOSFET Dual, N-Channel60 V, 14.4 mW, 42 AFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant14.4 mW @ 10 V60 V42 AMAXIMUM RATINGS (TJ = 2

FDC658APSingle P-Channel Logic Level PowerTrench MOSFET-30V, -4A, 50m General Description FeaturesThis P-Channel Logic Level MOSFET is produced using Max rDS(on) = 50 m @ VGS = -10 V, ID = -4AON Semiconductor advanced PowerTrench process. It has been optimized for battery power management Max rDS(on) = 75 m @ VGS = -4.5 V, ID = -3.4Aapplications. Low Gate ChargeAppli

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

NTTFS5C680NLMOSFET - Power, SingleN-Channel60 V, 26.5 mW, 20 AFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(on) MAX ID MAX26.5 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted) 6

NTTFS5C673NLPower MOSFET60 V, 9.3 mW, 50 A, Single N-ChannelFeatures Small Footprint (3.3x3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAX9.3 mW @ 10 VMAXIMUM RATINGS (TJ = 25C u

Ordering number : ENA0412A2SC6097Bipolar Transistorhttp://onsemi.com( )60V, 3A, Low VCE sat , NPN Single TP/TP-FAApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverterFeatures Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dissi

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

NTMFS5C673NLPower MOSFET60 V, 9.2 mW, 50 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)9.2 mW @ 10 V60 V

Ordering number : ENA0413A2SC6098Bipolar Transistorhttp://onsemi.com( )80V, 2.5A, Low VCE sat , NPN Single TP/TP-FAApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverterFeatures Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dis

NVMFS5C682NLMOSFET Power, SingleN-Channel60 V, 21 mW, 25 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS5C682NLWF - Wettable Flank Option for Enhanced Optical21 mW @ 10 V60 V 25 AInspection31.5 mW @ 4.5 V

MOSFET Power, SingleN-Channel60 V, 9.2 mW, 50 ANVMFS5C673NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS5C673NLWF - Wettable Flank Option for Enhanced Optical9.2 mW @ 10 V60 V 50 AInspection13 mW @ 4.5 V

BC640-016GHigh Current TransistorsPNP SiliconFeatures This is a Pb-Free Device http://onsemi.comCOLLECTOR2MAXIMUM RATINGS3Rating Symbol Value UnitBASECollector-Emitter Voltage VCEO -80 VdcCollector-Base Voltage VCBO -80 Vdc1Emitter-Base Voltage VEBO -5.0 Vdc EMITTERCollector Current - Continuous IC -0.5 AdcTotal Device Dissipation @ TA = 25C PD 625 mWDerat

Ordering number : EN8275A2SA2169/2SC6017Bipolar Transistorhttp://onsemi.com(-)50V, (-)10A, Low VCE(sat), (PNP)NPN Single TP/TP-FAApplications Relay drivers, lamp drivers, motor driversFeatures Adoption of MBIT processes Large current capacity Low collector-to-emitter saturation voltage High-speed switching( ): 2SA2169Specifications Absolute Maximum R

MOSFET Power, Single,N-Channel60 V, 10.7 mW, 50 ANTMFS5C673NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant60 V 10.7 mW @ 10 V 50 AMAXIMUM RATINGS (TJ = 25C unless other

NVMFD5C680NLMOSFET Power, DualN-Channel60 V, 28 mW, 26 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFD5C680NLWF - Wettable Flank Option for Enhanced Optical28 mW @ 10 V60 VInspection26 A41 mW @ 4.5 V AE

NVMFS5C612NLPower MOSFET60 V, 1.5 mW, 235 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C612NLWF - Wettable Flank Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable1.5 mW

Ordering number : ENA0279B2SC6082Bipolar Transistorhttp://onsemi.com( )50V, 15A, Low VCE sat NPN TO-220F-3SGApplications High-speed switching applications (switching regulator, driver circuit)Features Adoption of MBIT process Large current capacitance Low collector-to-emitter saturation voltage High-speed switchingSpecificationsAbsolute Maximum Ratin

NVMFS5C612NPower MOSFETSingle N-Channel, 60 V, 1.65 mW, 225 AFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C612NWF - Wettable Flank Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable60 V 1.6

NTMFS5C677NLPower MOSFET60 V, 15.0 mW, 36 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantMAXIMUM RATINGS (TJ = 25C unless otherwise noted)V(BR)DSS RDS(ON) MAX ID MAXParameter Symbol V

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Ordering number : ENA2329A EFC6612R Power MOSFET http://onsemi.com 20V, 5.1m, 23A, Dual N-Channel Features 2.5V drive Common-drain type Protection diode in 2KV ESD HBM Halogen free compliance Applications Lithium-ion battery charging and discharging switch Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Valu

NVD5C632NLPower MOSFET60 V, 2.5 mW, 155 A, Single N-ChannelFeatures Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseswww.onsemi.com AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(on) ID2.5 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted

FDC6321CDual N & P Channel , Digital FET FeaturesN-Ch 25 V, 0.68 A, RDS(ON) = 0.45 @ VGS= 4.5 VGeneral DescriptionP-Ch -25 V, -0.46 A, RDS(ON) = 1.1 @ VGS= -4.5 V.These dual N & P Channel logic level enhancement mode Very low level gate drive requirements allowing directfield effect transistors are produced using ON operation in 3 V circuits. VGS(th)

NTMFD5C680NLMOSFET Power, Dual,N-Channel60 V, 28 mW, 26 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS28 mW @ 10 V60 VCompliant26 A41 mW @ 4.5 VMAXI

NTMFS5C628NLPower MOSFET60 V, 2.4 mW, 150 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)2.4 mW @ 10 V60

Ordering number : ENA1800B2SC6144SGBipolar Transistorhttp://onsemi.com( )50V, 10A, Low VCE sat NPN TO-220F-3FSApplications Relay drivers, lamp drivers, motor driversFeatures Adoption of MBIT process Large current capacitance (IC=10A) Low collector-to-emitter saturation voltage (VCE(sat)=180mV(typ.)) High-speed switching (tf=25ns(typ.))SpecificationsAb

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

NVD5C648NLMOSFET Power, SingleN-Channel60 V, 4.1 mW, 89 AFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) ID AEC-Q101 Qualified and PPAP Capable4.1 mW @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS60 V 89 ACompliant5.7 mW @ 4.5 VMAXIMUM RATINGS (TJ

Ordering number : ENA0434A2SC6096Bipolar Transistorhttp://onsemi.com( )100V, 2A, Low VCE sat , NPN Single PCPApplicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, inverterFeatures Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dissipati

November 1997 FDC653N N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThis N-Channel enhancement mode power field effect 5 A, 30 V. RDS(ON) = 0.035 @ VGS = 10 Vtransistors is produced using Fairchild's proprietary, high cell RDS(ON) = 0.055 @ VGS = 4.5 V.density, DMOS technology. This very high density process isProprietary SuperSOTTM-6 pac

NTMFS5C670NLPower MOSFET60 V, 6.1 mW, 71 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)6.1 mW @ 10 V60 V

BC637, BC639, BC639-16High Current TransistorsNPN SiliconFeatures These are Pb-Free Devices* http://onsemi.comCOLLECTOR2MAXIMUM RATINGS3Rating Symbol Value UnitBASECollector - Emitter Voltage VCEO VdcBC637 601BC639 80EMITTERCollector - Base Voltage VCBO VdcBC637 60BC639 80Emitter - Base Voltage VEBO 5.0 VdcCollector Current - Continuous IC 1.0 AdcTO-

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

NTMFS5C645NLPower MOSFET60 V, 4.0 mW, 100 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)4.0 mW @ 10 V60

BC637, BC639, BC639-16High Current TransistorsNPN SiliconFeatures These are Pb-Free Devices* http://onsemi.comCOLLECTOR2MAXIMUM RATINGS3Rating Symbol Value UnitBASECollector - Emitter Voltage VCEO VdcBC637 601BC639 80EMITTERCollector - Base Voltage VCBO VdcBC637 60BC639 80Emitter - Base Voltage VEBO 5.0 VdcCollector Current - Continuous IC 1.0 AdcTO-

Ordering number : ENA0412A2SC6097Bipolar Transistorhttp://onsemi.com( )60V, 3A, Low VCE sat , NPN Single TP/TP-FAApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverterFeatures Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dissi

Ordering number : ENA0434A2SC6096Bipolar Transistorhttp://onsemi.com( )100V, 2A, Low VCE sat , NPN Single PCPApplicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, inverterFeatures Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dissipati

NVMFS5C670NLPower MOSFET60 V, 6.1 mW, 71 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C670NLWF - Wettable Flank Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable6.1 mW @

NTMFS5C646NLPower MOSFET60 V, 4.7 mW, 93 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)4.7 mW @ 10 V60 V

FDC6301N Dual N-Channel , Digital FET FeaturesGeneral Description25 V, 0.22 A continuous, 0.5 A Peak.These dual N-Channel logic level enhancement mode field RDS(ON) = 5 @ VGS= 2.7 Veffect transistors are produced using ON Semiconductor 's RDS(ON) = 4 @ VGS= 4.5 V.proprietary, high cell density, DMOS technology. This very high density process is especially tailored to

NVTFS5C673NLPower MOSFET60 V, 9.8 mW, 50 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses NVTFS5C673NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are Ro

NVMFS5C645NLPower MOSFET60 V, 4.0 mW, 100 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C645NLWF - Wettable Flank Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable4.0 mW

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and oth

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

NTMFS5C609NLPower MOSFET60 V, 1.36 mW, 250 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAX1.36 mW @ 10 VMAXIMUM RATINGS (TJ = 25C un

MOSFET Power, DualN-Channel60 V, 14.4 mW, 42 ANVMFD5C674NLFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFD5C674NLWF - Wettable Flank Option for Enhanced Optical14.4 mW @ 10 VInspection60 V42 A AEC-Q101 Qual

NVTFS5C670NLPower MOSFET60 V, 6.8 mW, 70 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses NVTFS5C670NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are Ro

Ordering number : ENA0410A2SC6094Bipolar Transistorhttp://onsemi.com( )60V, 3A, Low VCE sat , NPN Single PCPApplicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, inverterFeatures Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dissipatio

Ordering number : ENA2152AEFC6602RN-Channel Power MOSFEThttp://onsemi.com12V, 18A, 5.9m , Dual EFCPFeatures 2.5V drive Protection diode in Common-drain type Halogen free compliance 2KV ESD HBMSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitSource-to-Source Voltage VSSS 12 VGate-to-Source Voltage VGSS

NTD5C668NLPower MOSFET60 V, 8.9 mW, 48 A, Single N-ChannelFeatures Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseswww.onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(on) ID8.9 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted)60 V 49 A12.8 mW @ 4.5 VParameter S

NVMFS5C646NLPower MOSFET60 V, 4.7 mW, 93 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C646NLWF - Wettable Flank Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable4.7 mW @

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

NVD5C688NLPower MOSFET60 V, 27.4 mW, 17 A, Single N-ChannelFeatures Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseswww.onsemi.com AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(on) ID27.4 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unless otherwise note

FDC610PZP-Channel PowerTrench MOSFET30V, 4.9A, 42mGeneral DescriptionFeaturesThis P-Channel MOSFET is produced using ON Max rDS(on) = 42m at VGS = 10V, ID = 4.9ASemiconductors advanced PowerTrench process that has Max rDS(on) = 75m at VGS = 4.5V, ID = 3.7Abeen especially tailored to minimize the on-state resistance and yet maintain low gate

NVMFS5C628NLMOSFET Power, SingleN-Channel60 V, 2.4 mW, 150 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS5C628NLWF - Wettable Flank Option for Enhanced Optical2.4 mW @ 10 V60 V 150 AInspection3.3 mW @ 4.5 V

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

NVTFS5C658NLPower MOSFET60 V, 5.0 mW, 109 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses NVTFS5C658NLWF - Wettable Flanks ProductV(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable5.0 mW @ 10 V These Devices are Pb

September 2007FDC637BNZtmN-Channel 2.5V Specified PowerTrench MOSFET 20V, 6.2A, 24mFeatures General Description Max rDS(on) = 24m at VGS = 4.5V, ID = 6.2A This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process Max rDS(on) = 32m at VGS = 2.5V, ID = 5.2Athat has been especially tailored to minimize the on-sta

Ordering number : ENA0411A2SC6095Bipolar Transistorhttp://onsemi.com( )80V, 2.5A, Low VCE sat , NPN Single PCPApplicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, inverterFeatures Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dissipat

NTMFS5C628NMOSFET - Power, SingleN-Channel60 V, 3.0 mW, 150 AFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAX60 V 3.0 mW @ 10 V 150 AMAXIMUM RATINGS (TJ = 25C unless otherwis

NVD5C668NLPower MOSFET60 V, 8.9 mW, 49 A, Single N-ChannelFeatures Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseswww.onsemi.com AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(on) ID8.9 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted)

Ordering number : ENA0413A2SC6098Bipolar Transistorhttp://onsemi.com( )80V, 2.5A, Low VCE sat , NPN Single TP/TP-FAApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverterFeatures Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dis

Doc No. TT4-EA-14512Revision. 2Product StandardsMOS FETFC6B21100LFC6B21100LGate resistor installed Dual N-channel MOS FETUnit: mmFor lithium-ion secondary battery protection circuits2.676 5 4 Features Low source-source ON resistance:Rss(on) typ. = 4.5 m VGS = 4.5 V)1 2 3 CSP package:smallest & thinnest size RoHS compliant (EU RoHS / MSL:Level 1 co

Doc No. TT4-EA-14734Revision. 2Product StandardsMOS FETFC6B22100LFC6B22100LGate resistor installed Dual N-channel MOS FETUnit: mmFor lithium-ion secondary battery protection circuits2.566 5 4 Features Low source-source ON resistance:Rss(on) typ. = 8.2 m VGS = 4.5 V)1 2 3 CSP package:smallest & thinnest size RoHS compliant (EU RoHS / MSL:Level 1 co

Doc No. TT4-EA-14847Revision. 1Product StandardsMOS FETFC6B22220LFC6B22220LGate resistor installed Dual N-channel MOS FETUnit: mmFor lithium-ion secondary battery protection circuits2.566 5 4 Features Low source-source ON resistance:Rss(on) typ. = 8.2 m VGS = 4.5 V)1 2 3 CSP package:smallest & thinnest size RoHS compliant (EU RoHS / MSL:Level 1 compliant)

Doc No. TT4-EA-14570Revision. 2Product StandardsMOS FETFC694308ERFC694308ERDual N-channel MOSFETUnit : mm For switching circuits1.60.2 0.136 5 4 Features Low drive voltage : 2.5 V drive Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL : Level 1 compliant)1 2 3(0.6) Marking Symbol :V9(0.5)(0.5)1.0 Basic Part Number Dual FK33

This product complies with the RoHS Directive (EU 2002/95/EC).FC694301Silicon N-channel MOS FETFor switching circuits Overview PackageFC694301 is dual N-channel small signal MOS FET employed small size Codesurface mounting package. SSMini6-F3-BPackage dimension clicks here. Click! Features High-speed switching Pin Name Low drain-source ON resis

Doc No. TT4-EA-14950Revision. 1Product StandardsMOS FETFC6B21150LFC6B21150LGate resistor installed Dual N-channel MOS FETUnit: mm For lithium-ion secondary battery protection circuits2.146 5 4 Features Low source-source ON resistance:Rss(on) typ. = 4.0 mVGS = 4.5 V)1 2 3 CSPChip Size Package) RoHS compliant (EU RoHS / MSL:Level 1 compliant)0.3 Marki

This product complies with the RoHS Directive (EU 2002/95/EC).FC654601Silicon N-channel MOS FETFor switching circuits Overview PackageFC654601 is N-channel dual type small signal MOS FET employed small size Codesurface mounting package. SMini6-F3-BPackage dimension clicks here. Click! Features Low drain-source ON resistance: RDS(on) typ. = 6 W (VGS = 4.0

Transistors 2SC6036Silicon NPN epitaxial planar typeFor general amplificationUnit: mmComplementary to 2SA21620.33+0.05 0.10+0.05-0.02 -0.02 Features3 Low collector-emitter saturation voltage VCE(sat) SSS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing0.23+0.05 1 2-0.02(0.40)(0.40)0.800.05 Ab

Doc No. TT4-EA-14513Revision. 1Product StandardsMOS FETFC6B22090LFC6B22090LGate resistor installed Dual N-channel MOS FETUnit: mmFor lithium-ion secondary battery protection circuits2.566 5 4 Features Low source-source ON resistance:Rss(on) typ. = 8.5 m VGS = 4.5 V)1 2 3 CSP package:smallest & thinnest size RoHS compliant (EU RoHS / MSL:Level 1 co

Doc No. TT4-EA-14964Revision. 1Product StandardsMOS FETFC6B22160LFC6B22160LGate resistor installed Dual N-channel MOS FETUnit: mm For lithium-ion secondary battery protection circuits2.656 5 4 Features Low source-source ON resistance:Rss(on) typ. = 4.7 mVGS = 4.5 V)1 2 3 CSP(Chip Size Package) RoHS compliant (EU RoHS / MSL:Level 1 compliant)0.

This product complies with the RoHS Directive (EU 2002/95/EC).FC694601Silicon N-channel MOS FETFor switching circuits Overview PackageFC694601 is N-channel dual type small signal MOS FET employed small size Codesurface mounting package. SSMini6-F3-BPackage dimension clicks here. Click! Features Low drain-source ON resistance: RDS(on) typ. = 6 W (VGS = 4.

Power Transistors2SC6012Silicon NPN triple diffusion mesa typeFor horizontal deflection outputUnit: mm15.50.5 3.00.3 3.20.155 Features High breakdown voltage, and high reliability through the use of aglass passivation layer High-speed switching 55 Wide safe oeration area(4.0)52.00.21.10.1 Absolute Maximum Ratings TC = 25

Doc No. TT4-EA-14543Revision. 2Product StandardsMOS FETFC694309ERFC694309ERDual N-channel MOSFETUnit : mm For switching circuits1.60.2 0.136 5 4 Features Low drive voltage : 1.5 V drive Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL : Level 1 compliant)1 2 3(0.6) Marking Symbol :X9(0.5)(0.5)1.0 Basic Part Number Dual FK33

FC6A21060LFC6A21060LGate Resistor installed Dual N-Channel MOS FETUnit: mm For lithium-ion secondary battery protection circuit Features Low Source-source On-state Resistance:RSS(on)typ. = 8.7 mVGS = 4.5 V) CSP package:smallest & thinnest size Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) Marking Symbol:31 Packaging 1. Source (FET1)

TC6215N- and P-Channel Enhancement-Mode Dual MOSFETFeatures General Description Back to back gate-source Zener diodesThe Supertex TC6215 consists of high voltage, low threshold N-channel Guaranteed RDS(ON) at 4.0V gate driveand P-channel MOSFETs in an 8-Lead SOIC (TG) package. Both Low thresholdMOSFETs have integrated back to back gate-source Zener diode clamps

Supertex inc. TC6320N- and P-ChannelEnhancement-Mode MOSFET PairFeatures General Description Integrated GATE-to-SOURCE resistor The Supertex TC6320 consists of high voltage, low threshold N-channel and P-channel MOSFETs in 8-Lead SOIC and DFN Integrated GATE-to-SOURCE Zener diodepackages. Both MOSFETs have integrated GATE-to-SOURCE Low thresholdresistors and GATE-to

UNISONIC TECHNOLOGIES CO., LTD C6084 NPN SILICON TRANSISTOR SWITCHING REGULATOR APPLICATIONS 11TO-220TO-220F FEATURES * High Speed. * High Breakdown Voltage (VCBO=1500V). * High Reliability. 11TO-3PTO-12611TO-220F2TO-263 ORDERING INFORMATION Ordering Number Pin Description Package Packing Lead Free Halogen Free 1 2 3 C6084L-x-TA3 -T C6084G-x

UNISONIC TECHNOLOGIES CO., LTD UTC654 Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION As P-Channel Logic Level MOSFET, UTC654 has been optimized for battery power management applications. And its produced using UTCs advanced Power Trench process. SYMBOL ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 4 5 6

APT106N60B2C6 600V 106A 0.035 COOLMOSPower Semiconductors Super Junction MOSFET Ultra Low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated D Extreme dv/dt Rated Dual die (parallel)G Popular T-MAX PackageSUnless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with

STC603PINPN Silicon TransistorFeatures PIN Connection Power Transistor General Purpose application Low saturation voltage : VCE(SAT)=0.4V Typ. High Voltage : VCEO=60V Min. 123TO-220F-3L Ordering Information Type NO. Marking Package Code STC603PI STC603 TO-220F-3LMarking Diagram Column 1 : Manufacturer AUK Column 2 : Production Information AUKA

STC6075QNPN Silicon TransistorDescriptions PIN Connection General purpose amplifier High voltage application Features High collector breakdown voltage : VCEO = 90V Low collector saturation voltage : VCE(sat)=0.5V(MAX.) SOT-223 Ordering Information Type No. Marking Package Code STC6075Q STC6075 SOT-223 : Year & Week Code Absolute maximum

STC601FNPN Silicon TransistorDescriptions PIN Connection General purpose amplifier High voltage application Features High collector breakdown voltage : VCEO = 100V Low collector saturation voltage : VCE(sat)=0.5V(MAX.) SOT-89 Green device and RoHS compliant device Available in full lead (Pb)-free device Ordering Information Type No.

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BFC60SEMELABNCHANNELTO220AC Package Outline.Dimensions in mm (inches)ENHANCEMENT MODE10.67 (0.420)9.65 (0.380)4.83 (0.190)5.33 (0.210)3.56 (0.140) HIGH VOLTAGE4.83 (0.190)21.40 (0.020)0.51 (0.055)3.05 (0.120)ISOLATED2.54 (1.000)3.73 (0.147)3.53 (0.139)Dia.POWER MOSFETS1 2 3 VDSS 1500VID(cont) 0.1A1.78 (0.070)0.99 (0.390)RDS(on)

BC635 / BC637 / BC639NPN TypeElektronische BauelementePlastic Encapsulated TransistorRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeTO-92 FEATURE 4.550.2 3.50.2High current transistor080.43+0.070.10.46+0.10.(1.27 Typ.)1: Emitter+0.21.250.21 2 32: Collector2.540.13: BaseoMAXIMUM RATINGS (TA=25 C unless otherw

BC636/638/640 PNP Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeTO-92FEATURE4.550.2 3.50.2Power Dissipation: oPCM: 0.83 mW (Tamb=25 C)080.43+0.070.10.46+0.10.(1.27 Typ.)1: Emitter+0.21.250.21 2 32: Collector2.540.13: BaseoMAXIMUM RATINGS (TA

TSM10NC60CF Taiwan Semiconductor N-Channel Power MOSFET 600V, 10A, 0.75 FEATURES KEY PERFORMANCE PARAMETERS 100% UIS and Rg tested PARAMETER VALUE UNIT Advanced planar process VDS 600 V Compliant to RoHS Directive 2011/65/EU and in RDS(on) (max) 0.75 accordance to WEEE 2002/96/EC Halogen-free according to IEC 61249-2-21 Qg 33 nC APPLICATIONS

INC6002AC1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN TRANSISTOR DESCLIPTION OUTLINE DRAWING Unitmm 2.8 INC6002AC1 is a silicon NPN transistor. 0.65 1.5 0.65 It is designed with high voltage. (1)FEATURE Super mini package for easy mounting. (3) (2)Hige voltage VCEO=300V APPLICATION DC/DC convertor, High voltage switching

INC6008AC1PRELIMINARY NoticeThis is not a final specification FOR HIGH CURRENT DRIVE APPLICATIONSome parametric are subject to change. SILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNITmm 2.8 INC6008AC1 is a silicon NPN epitaxial type transistor. 0.65 1.5 0.65 It is designed with high collector current and small VCE(sat). FEATURE Super mini pack

INC6006AP1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNIT INC6006AP1 is a silicon NPN transistor. 4.6 MAXIt is designed with high voltage. 1.51.6FEATURE Small package for easy mounting. High voltage VCEO = 160V CE BLow voltage VCE(sat) = 0.2V(MAX) Complementary

ISC6046AU1PRELIMINARY This datasheet is possibility of change. FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATIONBecause this device is developing now. SILICON NPN EPITAXIAL TYPEUnitmmOUTLINE DRAWING DESCRIPTION 1.5 ISC6046AU1 is a silicon NPN epitaxial type transistor designed with 0.35 0.8 0.35high collector current, low VCEsat. FEATURE

PRELIMINARY INC6008AP1 NoticeThis is not a final specification Some parametric are subject to change. FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNIT 4.6 MAX INC6008AP1 is a silicon NPN transistor. 1.51.6It is designed with high voltage. FEATURE Small package for easy mounting

PRELIMINARY INC6007AP1 NoticeThis is not a final specification Some parametric are subject to change. FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNIT INC6007AP1 is a silicon NPN transistor. 4.6 MAXIt is designed with high voltage. 1.51.6FEATURE Small package for easy mounting.

ISC6053AM1FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATIONSILICON NPN EPITAXIAL TYPEUnitmmOUTLINE DRAWING DESCRIPTION 2.1 ISC6053AM1 is a silicon NPN epitaxial type transistor 0.425 1.25 0.425 Designed with high collector current, low VCE(sat). FEATURE High collector current ICMAX=650mA Low collector to emitter saturation voltage VCE

INC6006AC1 PRELIMINARY NoticeThis is not a final specification FOR LOW FREQUENCY AMPLIFY APPLICATIONSome parametric are subject to change. SILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNITmm 2.8 INC6006AC1 is a silicon NPN transistor. 0.65 1.5 0.65 It is designed with high voltage. FEATURE Small package for easy mounting. High voltage VCE

PRELIMINARY PRELIMINARY RT3C66M NoticeThis is not a final specification Some parametric are subject to change. Dual Transistor For Differential Amplify ApplicationSilicon Npn Epitaxial TypeDESCRIPTION OUTLINE DRAWING Unitmm RT3C66M is a sillicon NPN epitaxial type dual transistor. It is designed for differential amplify application. 2.1 1.25 FEATURE

2SC6046FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATIONSILICON NPN EPITAXIAL TYPEDESCRIPTION UnitmmOUTLINE DRAWING 2SC6046 is a silicon NPN epitaxial type transistor designed with high collector current, low VCEsat. 2.8 0.65 1.5 0.65FEATURE High collector current ICMAX=600mA Low collector to emitter saturation voltage VCEsa

2SC6120FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATIONSILICON NPN EPITAXIAL TYPEDESCRIPTION UnitmmOUTLINE DRAWING 2SC6120 is a silicon NPN epitaxial type transistor designed with 2.1 high collector current, low VCEsat. 0.425 1.25 0.425FEATURE High collector current ICMAX=600mA Low collector to emitter saturation voltage VCE

PRELIMINARY INC6006AS1 NoticeThis is not a final specification Some parametric are subject to change. FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNIT INC6006AS1 is a silicon NPN transistor. 4.0 It is designed with high voltage. FEATURE Small package for easy mounting. 0.1 Hi

INC6005AC1FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNITmm 2.8 INC6005AC1 is a silicon NPN transistor. 0.65 1.5 0.65 It is designed with high voltage. FEATURE Super mini package for easy mounting High voltage VCEO=400V APPLICATION DC/DC convertor, High voltage switching Terminal Connector JE

SMALL-SIGNAL TRANSISTOR 2SC6053 FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING Unit 2SC6053 is a mini package resin sealed silicon NPN epitaxial type transistor designed with high collector current, small VCE(sat). 2.5 . 1.50.5 0.5 FEATURE Super mini package for easy mounting High col

ISC6053AU1PRELIMINARY This datasheet is possibility of change. FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATIONBecause this device is developing now. SILICON NPN EPITAXIAL TYPEUnitmmOUTLINE DRAWING DESCRIPTION 1.5 ISC6053AU1 is a silicon NPN epitaxial type transistor 0.35 0.8 0.35Designed with high collector current, low VCE(sat). FEATURE

INC6005AP1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNIT INC6005AP1 is a silicon NPN transistor. 4.6 MAXIt is designed with high voltage. 1.51.6FEATURE Small package for easy mounting. CE BHigh voltage VCEO = 400V 0.53 0.4MAX0.48 MAX1.53.0APPLICATION

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPNBC636, 638, 640 PNPTO-92Plastic PackageFor Lead Free Parts, Device Part # will be Prefixed with "T"BCEHigh Current TransistorABSOLUTE MAXIMUM RATINGS (Ta=25C)BC635 BC637 BC639DESCRIPTION SYMBOLBC636 BC638 BC640 UNITVCE

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate TransistorsTO-92 BC635 / BC637 / BC639 TRANSISTOR (NPN)1. EMITTERFEATURES High current transistors 2. COLLECTOR 3. BASEBC635 BC637 BC639 XXX XXX XXXEquivalent Circuit 1 1 1BC635,BC637,BC639=Device code Solid dot=Green molding compound device, if none,the normal deviceXXX=Code

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate TransistorsBC636 / BC638 / BC640 TRANSISTOR (PNP)TO-92 FEATURES High current transistors 1. EMITTER 2. COLLECTORBC636 BC638 BC6403. BASE XXX XXX XXX1 1 1Equivalent Circuit BC636,BC638,BC640=Device code Solid dot=Green molding compound device, if none,the normal deviceXXX=Co

JMnic Product Specification Silicon NPN Power Transistors 2SC643A DESCRIPTION With TO-3 package High voltage,high reliability Low collector saturation voltage APPLICATIONS For color TV horizontal output applications PINNING(see fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMB

JMnic Product Specification Silicon NPN Power Transistors 2SC643 DESCRIPTION With TO-3 package High voltage,high reliability Low collector saturation voltage APPLICATIONS For color TV horizontal output applications PINNING(see fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBO

SEMICONDUCTOR BC637TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT TRANSISTORS.B CFEATURESComplementary to BC638.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDMAXIMUM RATING (Ta=25 )D 0.45E 1.00CHARACTERISTIC SYMBOL RATING UNIT F 1.27G 0.85H 0.45VCBOCollector-Base Voltage 60 V_HJ 14.00 + 0.50K 0.55 MAXVCEO F FCollector-Emitte

SEMICONDUCTOR KRC681T~KRC686TTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. AUDIO MUTING APPLICATION.EBFEATURES DIM MILLIMETERS_A 2.9 + 0.215High emitter-base voltage : VEBO=25V(Min)B 1.6+0.2/-0.1_C 0.70 + 0.05High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA)2_D 0.4 + 0.1Low on resistance : Ron=1(Typ.) (IB=5mA)E 2.8+

SEMICONDUCTOR KRC660E~KRC664EEPITAXIAL PLANAR NPN TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURESWith Built-in Bias Resistors.Simplify Circuit Design.1 5 DIM MILLIMETERS_A 1.6 0.05+Reduce a Quantity of Parts and Manufacturing Process._+A1 1.0 0.052_+B 1.6 0.05High Packing Density._

SEMICONDUCTOR KRC657U~KRC659UTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURESWith Built-in Bias Resistors.1 5DIM MILLIMETERS_A 2.00 + 0.20Simplify Circuit Design.2 _A1 1.3 + 0.1_B 2.1 + 0.1Reduce a Quantity of Parts and Manufacturing Process.3 4 D_B1 1.25 + 0.1C 0.65D 0.

SEMICONDUCTOR KRC657E~KRC659ETECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURESWith Built-in Bias Resistors.1 5 DIM MILLIMETERSSimplify Circuit Design._A 1.6 0.05+Reduce a Quantity of Parts and Manufacturing Process. _+A1 1.0 0.052_+B 1.6 0.05High Packing Density._

SEMICONDUCTOR KRC651U~KRC656UTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BFEATURES B1With Built-in Bias Resistors.1 5DIM MILLIMETERS_Simplify Circuit Design. A 2.00 + 0.202 _A1 1.3 + 0.1Reduce a Quantity of Parts and Manufacturing Process._B 2.1 + 0.13 4 D_B1 1.25 + 0.1High Pa

SEMICONDUCTOR KRC666E~KRC672EEPITAXIAL PLANAR NPN TRANSISTORTECHNICAL DATASWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONBB1FEATURESWith Built-in Bias Resistors.Simplify Circuit Design.1 5 DIM MILLIMETERS_A 1.6 0.05+Reduce a Quantity of Parts and Manufacturing Process._+A1 1.0 0.052_+B 1.6 0.05_+B1 1.2 0.05C 0.503

SEMICONDUCTOR KRC651F~KRC654FTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BFEATURES B1With Built-in Bias Resistors.Simplify Circuit Design.Reduce a Quantity of Parts and Manufacturing Process.DIM MILLIMETERSHigh Packing Density._+A 1.0 0.05_+A1 0.7 0.05Thin Fine Pitch Super mi

SEMICONDUCTOR KTC601UTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.BFEATURES B1A super-minimold package houses 2 transistor.1 5DIM MILLIMETERS_Excellent temperature response between these 2 transistor. A 2.00 + 0.202 _A1 1.3 + 0.1High pairing property in hFE._B 2.1 + 0.13 4 D_B1 1.25 + 0.1The follwin

SEMICONDUCTOR KRC660U~KRC664UEPITAXIAL PLANAR NPN TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BFEATURES B1With Built-in Bias Resistors.1 5DIM MILLIMETERS_Simplify Circuit Design. A 2.00 + 0.202 _A1 1.3 + 0.1Reduce a Quantity of Parts and Manufacturing Process._B 2.1 + 0.13 4 D_B1 1.25 + 0.1High Packing

SEMICONDUCTOR KTC601ETECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.BB1FEATURESA super-minimold package houses 2 transistor.Excellent temperature response between these 2 transistor.1 5 DIM MILLIMETERS_A 1.6 0.05+High pairing property in hFE._+A1 1.0 0.052_+B 1.6 0.05The follwing characteristics are commo

SEMICONDUCTOR KRC660F~KRC664FEPITAXIAL PLANAR NPN TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BFEATURES B1With Built-in Bias Resistors.Simplify Circuit Design.Reduce a Quantity of Parts and Manufacturing Process.DIM MILLIMETERSHigh Packing Density._+A 1.0 0.05_+A1 0.7 0.05Thin Fine Pitch Super m

SEMICONDUCTOR KRC651E~KRC656ETECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURES With Built-in Bias Resistors.Simplify Circuit Design.1 5 DIM MILLIMETERS_A 1.6 0.05+Reduce a Quantity of Parts and Manufacturing Process._+A1 1.0 0.052_+B 1.6 0.05High Packing Density._

SEMICONDUCTOR KRC641T~KRC646TTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT SWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPPLICATION.EBFEATURES DIM MILLIMETERS_A 2.9 + 0.215With Built-in Bias Resistors.B 1.6+0.2/-0.1_C 0.70 + 0.05Simplify Circuit Design.2_D 0.4 + 0.1Reduce a Quantity of Parts and Manufacturing Process.E 2.8+

SEMICONDUCTOR KRC657F~KRC659FTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BFEATURES B1With Built-in Bias Resistors.Simplify Circuit Design.Reduce a Quantity of Parts and Manufacturing Process.DIM MILLIMETERSThin Fine Pitch Super mini 5pin Package._+A 1.0 0.05_+A1 0.7 0.05_+B

SEMICONDUCTOR KTC611TTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION. EBFEATURES DIM MILLIMETERS_A 2.9 + 0.215Excellent hFE LinearityB 1.6+0.2/-0.1_C 0.70 + 0.05: hFE(2)=25(Min.) at VCE=6V, IC=400mA.2_D 0.4 + 0.1Complementary to KTA511T.E 2.8+0.2/-0.3_+F 1.9 0.23 4G 0.95_H 0.16 + 0.05I 0.00-0.1

SEMICONDUCTOR KTC601FTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.TENTATIVEFEATURESThin fine pitch super mini 5pin.Excellent temperature response between these 2 transistor.High pairing property in hFE.The follwing characteristics are common for Q1, Q2.MAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITVCB

SEMICONDUCTOR KMC6D5CN20CATECHNICAL DATA Common N-Ch Trench MOSFETGeneral DescriptionThis Device is a Dual N-Channel MOSFET designed for use as a bi-Cdirectional load switch, facilitated by its commom-drain configuration.DIts mainly suitable for Li-ion battery pack.8 5AE1EBA1FEATURES 1 4VDSS=20V, ID=6.5A.Low Drain to Source On Resistance.DIM MILLIMETERS

SEMICONDUCTOR BC638TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH CURRENT TRANSISTORS.B CFEATURESComplementary to BC637.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDMAXIMUM RATING (Ta=25 )D 0.45E 1.00CHARACTERISTIC SYMBOL RATING UNIT F 1.27G 0.85H 0.45VCBO -60 VCollector-Base Voltage_HJ 14.00 + 0.50K 0.55 MAXF FVCEO -60 VCollecto

SEMICONDUCTOR KRC666U~KRC672UEPITAXIAL PLANAR NPN TRANSISTORTECHNICAL DATASWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONBFEATURES B1With Built-in Bias Resistors.1 5DIM MILLIMETERS_Simplify Circuit Design. A 2.00 + 0.202 _A1 1.3 + 0.1Reduce a Quantity of Parts and Manufacturing Process._B 2.1 + 0.13 4 D_B1 1.25 + 0.1C 0.65D

APTC60SKM24CT1GVDSS = 600V Buck chopper RDSon = 24m max @ Tj = 25C Super Junction MOSFET ID = 95A @ Tc = 25C SiC chopper diode Application AC and DC motor control 115 6 Switched Mode Power Supplies Features Q1 - Ultra low RDSon 7- Low Miller capacitance NTC8- Ultra low gate charge 3- Avalanche energy rated 4- Very rugged CR2

APTC60DDAM70CT1GVDSS = 600V Dual boost chopper RDSon = 70m max @ Tj = 25C Super Junction MOSFET ID = 39A @ Tc = 25C SiC chopper diode Application AC and DC motor control Switched Mode Power Supplies Power Factor Correction Features - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged

APT38N60BC6 APT38N60SC6 600V 38A 0.099 COOLMOSPower Semiconductors Super Junction MOSFET Ultra Low RDS(ON) D3PAK Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated Extreme dv/dt RatedD Popular TO-247 or Surface Mount D3 package.GSMAXIMUM RATINGS All Ratings per die: TC = 25C unless otherwise specified. Symbol Parame

APT94N65B2C6 APT94N65LC6 650V 94A 0.035APT94N65B2C6Super Junction MOSFET T-MaxTO-264 Ultra Low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated APT94N65LC6 Extreme dv/dt RatedDGUnless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made withStwo parallel MOSFET die. I

APTC60DDAM45CT1GVDSS = 600V Dual boost chopper RDSon = 45m max @ Tj = 25C Super Junction MOSFET ID = 49A @ Tc = 25C Power Module Application AC and DC motor control Switched Mode Power Supplies Power Factor Correction Features - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged S

APT30N60BC6 APT30N60SC6 600V 30A .125 COOLMOSPower Semiconductors Super Junction MOSFET Ultra Low RDS(ON) D3PAK Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated Extreme dv/dt RatedDGSMAXIMUM RATINGS All Ratings per die: TC = 25C unless otherwise specified. Symbol Parameter APT30N60B_SC6 UNIT600 VoltsVDSS Drain-Sour

APTC60HM45SCTGFull - Bridge VDSS = 600V Series & SiC parallel diodes RDSon = 45m max @ Tj = 25CSuper Junction ID = 49A @ Tc = 25C MOSFET Power ModuleApplication Motor control VBUS Switched Mode Power Supplies CR1A CR3A Uninterruptible Power Supplies Features CR1B CR3BQ1 Q3 G3G1- Ultra low RDSon OUT1 OUT2S3S1- Low Miller capacit

APT97N65B2C6 APT97N65LC6 650V 97A 0.041APT97N65B2C6COOLMOSPower Semiconductors Super Junction MOSFET T-MaxTO-264 Ultra Low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated APT97N65LC6 Extreme dv/dt RatedDGUnless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with

APTC60DAM24CT1GVDSS = 600V Boost chopper RDSon = 24m max @ Tj = 25C Super Junction MOSFET ID = 95A @ Tc = 25C Power Module Application AC and DC motor control 5 6 11 Switched Mode Power Supplies Power Factor Correction Features CR1 - Ultra low RDSon 3NTC- Low Miller capacitance 4Q2- Ultra low gate charge - Avalanche energy rated

APTC60AM24SCTG VDSS = 600V Phase leg RDSon = 24m max @ Tj = 25C Series & SiC parallel diodes ID = 95A @ Tc = 25C Super Junction MOSFET Power Module Application Motor control Switched Mode Power Supplies Uninterruptible Power Supplies NTC2VBUSFeatures Q1- Ultra low RDSon - Low Miller capacitance G1- Ultra low gate charge OUT- Aval

APTC60HM70SCTGVDSS = 600V Full Bridge Series & SiC parallel diodes Super Junction RDSon = 70m max @ Tj = 25CMOSFET Power Module ID = 39A @ Tc = 25C Application VBUS Motor control CR1A CR3A Switched Mode Power Supplies Uninterruptible Power Supplies CR1B CR3BQ1 Q3Features CoolMOS G3G1- Ultra low RDSon OUT1 OUT2S3S1- Low Mil

APTC60DAM18CTG Boost chopper VDSS = 600V SiC FWD diode RDSon = 18m max @ Tj = 25C Super Junction ID = 143A @ Tc = 25C MOSFET Power Module Application AC and DC motor control VBUS NTC2 Switched Mode Power Supplies VBUS SENSE Power Factor Correction CR1 Features - Ultra low RDSon OUT- Low Miller capacitance Q2- Ultra low gate charge -

APT53N60BC6 APT53N60SC6 600V 53A 0.070 COOLMOSPower Semiconductors Super Junction MOSFET Ultra Low RDS(ON) D3PAK Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated Extreme dv/dt RatedD Popular TO-247 or Surface Mount D3 package.GSMAXIMUM RATINGS All Ratings per die: TC = 25C unless otherwise specified. Symbol Parame

APTC60AM35SCTG VDSS = 600V Phase leg Series & SiC parallel diodes RDSon = 35m max @ Tj = 25C Super Junction ID = 72A @ Tc = 25C MOSFET Power Module Application Motor control Switched Mode Power Supplies NT C2 Uninterruptible Power Supplies VBUSQ1 Features G1- Ultra low RDSon OUT- Low Miller capacitance S1- Ultra low gate charge Q2-

APT77N60BC6 APT77N60SC6 600V 77A 0.041 COOLMOSPower Semiconductors Super Junction MOSFET Ultra Low RDS(ON) D3PAK Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated Extreme dv/dt RatedD Popular TO-247 or Surface Mount D3 package.GSMAXIMUM RATINGS All Ratings per die: TC = 25C unless otherwise specified. Symbol Parame

APTC60AM18SCG Phase leg VDSS = 600V Series & SiC parallel diodes RDSon = 18m max @ Tj = 25C Super Junction ID = 143A @ Tc = 25C MOSFET Power Module Application VBUS Motor control Switched Mode Power Supplies Uninterruptible Power Supplies Q1Features G1 OUTS1- Ultra low RDSon - Low Miller capacitance - Ultra low gate charge Q2-

APT30N60KC6 600V 30A .125 COOLMOSPower Semiconductors Super Junction MOSFET TO-220 Ultra Low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated D Extreme dv/dt RatedGSMAXIMUM RATINGS All Ratings per die: TC = 25C unless otherwise specified. Symbol Parameter APT30N60KC6 UNIT600 VoltsVDSS Drain-Source Voltage30

2-1 TransistorsAbsolute Maximum RatingsICBO hFEVCBO VCEO Ic PcConditions ConditionsPart Number ApplicationsVCB VCE Ic(V) (V) (A) (W) ( A)(V) min max(V) (A)2SC2837 Audio, general-purpose 150 150 10 100 100 150 50 180 4 32SC2921 Audio, general-purpose 160 160 15 150 100 160 50 180 4 52SC2922 Audio, general-purpose 180 180 17 200 100 180 30 180 4 82SC3263 Audio, gener

2SC6145Audio Amplification TransistorFeatures and Benefits Description LAPT (High frequency multi emitter transistor) Sanken LAPT transistors have an innovative design, produced Small package (TO-3P) by adapting advancements in the unique Sanken thin-wafer High power handling capacity, 160 W production technology. These NPN power transistors achieve Improved sound out

2SC6145AAudio Amplification TransistorFeatures and Benefits Description LAPT (High frequency multi emitter transistor) Sanken LAPT transistors have an innovative design, produced Small package (TO-3P) by adapting advancements in the unique Sanken thin-wafer High power handling capacity, 160 W production technology. These NPN power transistors achieve Improved sound ou

BC635/637/639(NPN)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High current transistors Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Emitter Voltage BC635 45 V BC637 60 V BC639 100 VVCEO Collector-Emitter Voltage BC635 45 V BC637 60 V BC639 80 V

BC636/BC638/BC640 Transistor(PNP) 1. EMITTER TO-92 2. COLLECTOR 3. BASE Features High current transistors MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage BC636 -45 BC638 -60 V BC640 -100 VCEO Collector-Emitter Voltage BC636 -45 BC638 -60 V BC640 -80 Dimensions in inches and (millimeters)VEBO Emitter-

AOT20C60/AOB20C60/AOTF20C60600V,20A N-Channel MOSFETGeneral Description Product Summary VDS @ Tj,max 700V Trench Power AlphaMOS-II technology Low RDS(ON) IDM 145A Low Ciss and Crss RDS(ON),max

AOT20C60/AOB20C60/AOTF20C60600V,20A N-Channel MOSFETGeneral Description Product Summary VDS @ Tj,max 700V Trench Power AlphaMOS-II technology Low RDS(ON) IDM 145A Low Ciss and Crss RDS(ON),max

AOTF20C60P600V,20A N-Channel MOSFETGeneral Description Product Summary Trench Power AlphaMOS-II technology VDS @ Tj,max 700V Low RDS(ON) IDM 80A Low Ciss and Crss RDS(ON),max

AOT11C60/AOB11C60/AOTF11C60600V,11A N-Channel MOSFETGeneral Description Product Summary VDS @ Tj,max 700The AOT11C60 & AOB11C60 & AOTF11C60 arefabricated using an advanced high voltage MOSFET IDM 80Aprocess that is designed to deliver high levels of RDS(ON),max

AOT11C60/AOB11C60/AOTF11C60600V,11A N-Channel MOSFETGeneral Description Product Summary VDS @ Tj,max 700The AOT11C60 & AOB11C60 & AOTF11C60 arefabricated using an advanced high voltage MOSFET IDM 80Aprocess that is designed to deliver high levels of RDS(ON),max

AOT20C60/AOB20C60/AOTF20C60600V,20A N-Channel MOSFETGeneral Description Product Summary VDS @ Tj,max 700V Trench Power AlphaMOS-II technology Low RDS(ON) IDM 145A Low Ciss and Crss RDS(ON),max

AOW20C60600V,20A N-Channel MOSFETGeneral Description Product Summary VDS @ Tj,max 700The AOW20C60 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high IDM 145Alevels of performance and robustness in popular AC-DC RDS(ON),max

AOWF11C60600V,11A N-Channel MOSFETGeneral Description Product Summary Latest Trench Power AlphaMOS-II technology VDS @ Tj,max 700V Low RDS(ON) IDM 80A Low Ciss and Crss RDS(ON),max

AOT11C60/AOB11C60/AOTF11C60600V,11A N-Channel MOSFETGeneral Description Product Summary VDS @ Tj,max 700The AOT11C60 & AOB11C60 & AOTF11C60 arefabricated using an advanced high voltage MOSFET IDM 80Aprocess that is designed to deliver high levels of RDS(ON),max

AFC6601 Alfa-MOS 30V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC6601, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 30V/3.4A,RDS(ON)=68m@VGS=10V to provide excellent RDS(ON), low gate charge. 30V/3.0A,RDS(ON)=74m@VGS=4.5V These devices are particularly suited for low 30V/2.0A,RDS(ON)=90m@VGS=2

AFC6332 Alfa-MOS 20V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC6332, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 20V/1.0A,RDS(ON)=280m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 20V/0.8A,RDS(ON)=340m@VGS=2.5V These devices are particularly suited for low 20V/0.7A,RDS(ON)=580m@VGS=

AFC6604 Alfa-MOS 20V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC6604, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 20V/3.5A,RDS(ON)=58m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 20V/2.6A,RDS(ON)=68m@VGS=2.5V These devices are particularly suited for low P-Channel voltage power m

AFC6602 Alfa-MOS 30V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC6602, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 30V/3.5A,RDS(ON)=75m@VGS=10V to provide excellent RDS(ON), low gate charge. 30V/2.6A,RDS(ON)=100m@VGS=4.5V These devices are particularly suited for low P-Channel voltage power m

Spec. No. : C202C6 Issued Date : 2014.05.11 CYStech Electronics Corp.Revised Date : Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistors (dual transistors) HBN2412C6 Features Two BTC2412 chips in a SOT-563 package. Mounting possible with SOT-523 automatic mounting machines. Transistor elements are independent, eliminating interference. Mounti

Spec. No. : C154C6 Issued Date : 2010.09.29 CYStech Electronics Corp.Revised Date : 2012.07.19 Page No. : 1/7 PNP and NPN Dual Digital Transistors HBCA143TC6 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors with comple

Spec. No. : C962C6 Issued Date : 2014.07.31 CYStech Electronics Corp. Revised Date : Page No. : 1/ 8 P-Channel Enhancement Mode MOSFET MTP1067C6 BVDSS -20V ID -1.06A VGS=-4.5V, ID=-1.06A 0.112 Features VGS=-2.5V, ID=-1.0A 0.149 RDSON(TYP) High speed switching VGS=-1.8V, ID=-0.49A 0.206 Low-voltage drive(-1.8V) Easily designed drive circuits

Spec. No. : C915C6 Issued Date : 2014.05.12 CYStech Electronics Corp.Revised Date : Page No. : 1/ 8 N-CHANNEL MOSFET (dual transistors) MTDN3154C6 BVDSS 20VID 0.54A0.30 VGS=4.5V, ID=540mA 0.55 RDSON(TYP) VGS=2.5V, ID=500mA Features 1.50 VGS=1.8V, ID=350mA High speed switching Low-voltage drive Easily designed drive circuits Easy to use

Spec. No. : C901C6 Issued Date : 2012.09.28 CYStech Electronics Corp.Revised Date : Page No. : 1/7 General Purpose NPN / PNP Epitaxial Planar Transistors (dual transistors) HBNP45C6 Features Includes a BTC2412 chip and a BTA1037 chip in a SOT-563 package. Mounting possible with SOT-523 automatic mounting machines. Transistor elements are independent, eliminati

Spec. No. : C650N3 Issued Date : 2011.01.06 CYStech Electronics Corp.Revised Date : 2011.10.04 Page No. : 1/6 NPN Digital Transistors (Built-in Resistors) DTC623TN3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors wi

Spec. No. : C355C6 Issued Date : 2012.07.19 CYStech Electronics Corp.Revised Date : Page No. : 1/6 Dual NPN Digital Transistors HBC114YC6 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors with complete isolation to allo

Spec. No. : C306C6 Issued Date : 2012.09.28 CYStech Electronics Corp.Revised Date : Page No. : 1/6 General Purpose PNP Epitaxial Planar Transistors (dual transistors) HBP1037C6 Features Two BTA1037 chips in a SOT-563 package. Mounting possible with SOT-523 automatic mounting machines. Transistor elements are independent, eliminating interference. Mountin

Spec. No. : C368C6 Issued Date : 2014.05.09 CYStech Electronics Corp.Revised Date : Page No. : 1/6 Dual NPN Digital Transistors HBC143EC6 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors with complete isolation to allo

Spec. No. : C155C6 Issued Date : 2013.10.02 CYStech Electronics Corp.Revised Date : Page No. : 1/7 PNP and NPN Dual Digital Transistors HBCA144EC6 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors with complete isolatio

Spec. No. : C833C6 Issued Date : 2012.08.07 CYStech Electronics Corp.Revised Date : 2013.08.27 Page No. : 1/ 8 N-CHANNEL MOSFET (dual transistors) MTDN1034C6 BVDSS 30VID 0.3AVGS=4.5V, ID=200mA 0.85 Features VGS=2.5V, ID=175mA 1.23 RDSON(TYP) High speed switching VGS=1.8V, ID=150mA 1.8 Low-voltage drive(1.5V) VGS=1.5V, ID=40mA 2.3 Easily desig

Spec. No. : C813N6 Issued Date : 2017.03.30 CYStech Electronics Corp.Revised Date : Page No. : 1/12 N- AND P-Channel Enhancement Mode MOSFET N-CH P-CHMTC6601N6 BVDSS 30V -30VID 3.7A(VGS=10V) -2.7A(VGS=-10 V) 37.7m(VGS=10V) 91.3m(VGS=-10V) RDSON 42.7m(VGS=4.5V) 104m(VGS=-4.5V) (TYP.) 62.6m(VGS=2.5V) 132m(VGS=-2.5V) Features Simple drive requiremen

LRC6N33YT1GGeneral Purpose Transistors with Power MOSFET1. FEATURESESD Protected:1500VHigh current capacity in compact package.Epitaxial planar type.Low threshold voltage (VGS(th): 0.9V...1.5V)DFN2020-6Dmakes it ideal for low voltage applications.We declare that the material of product compliance with RoHS requirements and Halogen Free. S- pre

3CA638(BC638) PNP Ptot TC75 1.5 W ICM 1.0 A Tjm 150 Tstg -55~150 V(BR)CBO ICB=0.1mA 60 V V(BR)CEO ICE=10mA 60 V V(BR)EBO IEB=10A 5.0 V ICBO VCB=30V 0.1 A IEBO VEB=4V 0.1 A IC=0.5A VCEsat 0.5 V IB=0.05A VCE=2V hFE 63~25

FHC6287(2N6287) PNP PCM TA=25 175 W IC 20 A Tstg -55~175 VCBO ICB100mA 100 V VCEO ICE100mA 100 V VEBO IEB100mA 5 V ICEO VCE=50V 1.0 mA IEBO VEB=5V 2 mA VCEsat 3.0 V IC=20A IB=200mA VBEsat 4.0 V VCE=3V 150018000 IC=1

SMD TypeSMD TypeSMD TypeSMD TypeMOSFETMOSFETProduct specification KDC6020C(FDC6020C)( )SOT-23-6Unit: mm Features N-Channel VDS=20V ID=5.9A RDS(ON) 27m (VGS = 4.5V)6 5 4DS(ON) GS R 39m (V = 2.5V)DS D P-ChannelV =-20V I =-4.2A0to0.1 RDS(ON) 55m (VGS =-4.5V)DS(ON) GS R 82m (V =-2.5V)1 2

SMD Type TransistorsNPN TransistorsKTC601USOT-353 Unit: mm1.3+0.1-0.10.65 Features Excellent temperature response between these 2 transistor. High pairing property in hFE. The follwing characteristics are common for Q1, Q2.+0.1 +0.050.1-0.020.3 -0.1+0.12.1-0.15 41. Q1 BASE2. Q , Q EMITTER1 23. Q BASE 24. Q COLLECTOR25. Q COLLECTOR

SMD Type MOSFETP-Channel MOSFETFDC658AP (KDC658AP)( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features6 5 4 VDS (V) =-30V ID =-4 A (VGS =-10V) RDS(ON) 50m (VGS =-10V)2 31 RDS(ON) 75m (VGS =-4.5V)+0.020.15 -0.02+0.01 Low Gate Charge-0.01+0.2-0.11 61.Drain 4.Source2 5 2.Drain 5.Drain3.Gate 6.Drain3 4 Absolute Maximum

SMD Type TransistorsDigital TransistorsDTC643TK (KDTC643TK)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=600mA Collector Emitter Voltage VCEO=20V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.BaseC2.EmitterB3.collectorRER=4.7k Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit

SMD Type MOSFETP-Channel MOSFETFDC642P (KDC642P)( )SOT-23-6 Unit:mm+0.10.4 -0.16 5 4 Features VDS (V) =-20V ID =-4 A RDS(ON) 65m (VGS =-4.5V)2 31+0.02 RDS(ON) 100m (VGS =-2.5V) 0.15 -0.02+0.01-0.01+0.2-0.1D D61D D52G S43 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Vol

SMD Type MOSFETP-Channel MOSFETFDC610PZFeatures( )SOT-23-6 Unit:mmVDS (V) =-30V+0.10.4 -0.1ID =-4.9 A (VGS =25V)RDS(ON) 42m (VGS =-10V)5 46RDS(ON) 75m (VGS =-4.5V)2 31+0.020.15 -0.02+0.01-0.01+0.2-0.1DD1 6D D521 Drain 4 Source2 Drain 5 Drain3 Gate 6 DrainSG3 43Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit

RU8205BC6N-Channel Advanced Power MOSFETFeatures Pin Description 20V/6A,G2 RDS (ON) =11m(Typ.)@VGS=4.5V RDS (ON) =16m(Typ.)@VGS=2.5V D1/D2 Low RDS (ON)G1 Super High Dense Cell DesignS2 Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) D1/D2Dual N-Channel MOSFET S1SOT23-6D1 D2Applications Power ManagementG1 G2

RU8205C6N-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 20V/6A,RDS (ON) =22m (Typ.) @ VGS=4.5VRDS (ON) =30m (Typ.) @ VGS=2.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green AvailableSOT-23-6Applications Power ManagementDual N-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Ratings

RU20P4C6P-Channel Advanced Power MOSFETFeatures Pin Description -20V/-4A,S RDS (ON) =35m(Typ.)@VGS=-4.5V RDS (ON) =45m(Typ.)@VGS=-2.5VD Low On-ResistanceD Super High Dense Cell Design Reliable and Rugged Reliable and RuggedG Lead Free and Green Devices Available (RoHS Compliant)DDSOT23-6DDDDDDDApplicationspp Load S

RU30P4C6P-Channel Advanced Power MOSFETFeatures Pin Description -30V/-4A,S RDS (ON) =50m(Typ.)@VGS=-10V RDS (ON) =75m(Typ.)@VGS=-4.5VD Low On-ResistanceD Super High Dense Cell Design Reliable and RuggedG Lead Free and Green Devices Available (RoHS Compliant)DDSOT23-6DApplications Load SwitchDC/DC ConverterGSP-Channel MOSFET

CHENMKO ENTERPRISE CO.,LTDCHDTC643TUGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 20 Volts CURRENT 600 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURESC-70/SOT-323* Small surface mounting type. (SC-70/SOT-323)* In addition to the features of regular digital transistor. VCE(sat)=40mV at IC/IB=50mA/2.5mA,makes these transist

CHENMKO ENTERPRISE CO.,LTDCHDTC663EUGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 20 Volts CURRENT 600 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23)SOT-23* In addition to the features of regular digital transistor. VCE(sat)=40mV at IC/IB=50mA/2.5mA,makes these transistors ideal fo

CHENMKO ENTERPRISE CO.,LTDCHDTC614TKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 20 Volts CURRENT 600 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* In addition to the features of regular digital transistor. VCE(sat)=40mV at IC/IB=50mA/2.5mA,makes these transistors ideal for

CHENMKO ENTERPRISE CO.,LTD2SC6114G5GPSURFACE MOUNTTransistorVOLTAGE 50 Volts CURRENT 0.1 AmpereAPPLICATION* Small signal low frequency amplifier.FEATURE* Surface mount package. (FBPT-1023) * Low cob. Cob=0.2pF(Typ.)* PC= 150mW CONSTRUCTION* NPN Silicon Transistor C (3)

CHENMKO ENTERPRISE CO.,LTDCHDTC663EUGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 20 Volts CURRENT 600 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURESC-70/SOT-323* Small surface mounting type. (SC-70/SOT-323)* In addition to the features of regular digital transistor. VCE(sat)=40mV at IC/IB=50mA/2.5mA,makes these transist

CHENMKO ENTERPRISE CO.,LTD2SC6114T1GPSURFACE MOUNTTransistorVOLTAGE 50 Volts CURRENT 0.1 AmpereAPPLICATION* Small signal low frequency amplifier.FEATURE* Surface mount package. (SOT-923)SOT-923* Low cob. Cob=0.2pF(Typ.)* PC= 150mW0.18~0.26 0.08~0.14CONSTRUCTION(3)* NPN Silicon Transistor(1) (2)0.11~0.190.36~0.410.35(typ)C (3) 0.565~0.635CIRCUITSOT-923

CHENMKO ENTERPRISE CO.,LTDCHDTC643TKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 20 Volts CURRENT 600 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23)SOT-23* In addition to the features of regular digital transistor. VCE(sat)=40mV at IC/IB=50mA/2.5mA,makes these transistors ideal fo

CHENMKO ENTERPRISE CO.,LTDCHDTC623TKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 20 Volts CURRENT 600 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* In addition to the features of regular digital transistor. VCE(sat)=40mV at IC/IB=50mA/2.5mA,makes these transistors ideal for

CHENMKO ENTERPRISE CO.,LTDCHDTC614TUGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 20 Volts CURRENT 600 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURESC-70/SOT-323* Small surface mounting type. (SC-70/SOT-323)* In addition to the features of regular digital transistor. VCE(sat)=40mV at IC/IB=50mA/2.5mA,makes these transist

CHENMKO ENTERPRISE CO.,LTDCHDTC623TUGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 20 Volts CURRENT 600 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURESC-70/SOT-323* Small surface mounting type. (SC-70/SOT-323)* In addition to the features of regular digital transistor. VCE(sat)=40mV at IC/IB=50mA/2.5mA,makes these transist

MIC94052/53 MIC94052/9405384m P-Channel MOSFET in SC-70-6General Description FeaturesThe MIC94052/94053 are low on-resistance, 84m(max) 1.8V to 5.5V input voltage rangeP-channel MOSFETs. They are housed in a Teeny SC- Low on-resistance P-channel MOSFET:70-6 package. 70m at VGS = 4.5V (typ) 2A continuous currentDesigned for high-side switch applications where

Pb Free ProductNCE80TC65BT650V, 80A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 650V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching

Dual N-Channel Enhancement Mode PE5C6JZNIKO-SEM PDFN 3x3S Field Effect Transistor Halogen-Free & Lead-FreePRODUCT SUMMARY V(BR)DSS RDS(ON) ID 24V 5.5m 54A Features Patent Pending. Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Loss

Datasheet 160m, 600V, Super Junction N-Channel Power MOSFET SRC60R160FB General Description Symbol The Sanrise SRC60R160FB is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

Preliminary Datasheet75m, 600V, Super Junction N-Channel Power MOSFET SRC60R075BSGeneral Description SymbolThe Sanrise SRC60R075BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior pow

Datasheet800m, 650V, Super Junction N-Channel Power MOSFET SRC65R800General Description SymbolThe Sanrise SRC65R800 is a high voltage powerMOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity and

Preliminary Datasheet64m, 600V, Super Junction N-Channel Power MOSFET SRC60R064SGeneral Description SymbolThe Sanrise SRC60R064S is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior power

Datasheet30m, 600V, Super Junction N-Channel Power MOSFET SRC60R030FBSGeneral DescriptionSymbolThe Sanrise SRC60R030FBS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensi

Datasheet220m, 650V, Super Junction N-Channel Power MOSFET SRC65R220BSGeneral Description SymbolThe Sanrise SRC65R220BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

Datasheet 52m 650V, Super Junction N-Channel Power MOSFET SRC65R052FB General Description Symbol The Sanrise SRC65R052FB is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

Datasheet 78m, 600V, Super Junction N-Channel Power MOSFET SRC60R078B General Description Symbol The Sanrise SRC60R078B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

Datasheet32m, 650V, Super Junction N-Channel Power MOSFET SRC65R032FBGeneral Description SymbolThe Sanrise SRC65R032FB is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

Datasheet75m, 600V, Super Junction N-Channel Power MOSFET SRC60R075BSGeneral Description SymbolThe Sanrise SRC60R075BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

Datasheet68m, 600V, Super Junction N-Channel Power MOSFET SRC60R068BSGeneral Description SymbolThe Sanrise SRC60R068BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

Datasheet75m, 600V, Super Junction N-Channel Power MOSFET SRC60R075FBSGeneral Description SymbolThe Sanrise SRC60R075FBS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensit

Datasheet230m, 650V, Super Junction N-Channel Power MOSFET SRC65R230BSGeneral Description SymbolThe Sanrise SRC65R230BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

Datasheet 650m, 650V, Super Junction N-Channel Power MOSFET SRC65R650 General Description Symbol The Sanrise SRC65R650 is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power d

Datasheet100m, 600V, Super Junction N-Channel Power MOSFET SRC60R100BGeneral Description SymbolThe Sanrise SRC60R100B is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity a

Datasheet330m, 650V, Super Junction N-Channel Power MOSFET SRC65R330ECGeneral Description SymbolThe Sanrise SRC65R330EC is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

Datasheet110m, 650V, Super Junction N-Channel Power MOSFET SRC65R110BSGeneral Description SymbolThe Sanrise SRC65R110BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

Datasheet68m, 600V, Super Junction N-Channel Power MOSFET SRC60R068BSGeneral Description SymbolThe Sanrise SRC60R068BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

Datasheet40m, 650V, Super Junction N-Channel Power MOSFET SRC65R040BGeneral Description SymbolThe Sanrise SRC65R040B is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity an

Datasheet 110m, 650V, Super Junction N-Channel Power MOSFET SRC65R110B General Description Symbol The Sanrise SRC65R110B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

Datasheet17m, 600V, Super Junction N-Channel Power MOSFET SRC60R017FBGeneral DescriptionSymbolThe Sanrise SRC60R017FB is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

Datasheet 45m 600V, Super Junction N-Channel Power MOSFET SRC60R045FB General Description Symbol The Sanrise SRC60R045FB is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

Datasheet85m, 650V, Super Junction N-Channel Power MOSFET SRC65R085BSGeneral Description SymbolThe Sanrise SRC65R085BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

Datasheet 200m, 600V, Super Junction N-Channel Power MOSFET SRC60R200 High Power AC/DC Power Supply General Description Symbol The Sanrise SRC60R200 is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applica

Datasheet220m, 650V, Super Junction N-Channel Power MOSFET SRC65R220M2General Description SymbolThe Sanrise SRC65R220M2 is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

Datasheet90m, 600V, Super Junction N-Channel Power MOSFET SRC60R090BSGeneral Description SymbolThe Sanrise SRC60R090BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

Datasheet37m, 600V, Super Junction N-Channel Power MOSFET SRC60R037BGeneral Description SymbolThe Sanrise SRC60R037B is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity an

Datasheet600m, 650V, Super Junction N-Channel Power MOSFET SRC65R600ECGeneral Description SymbolThe Sanrise SRC65R600EC is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

Datasheet 360m, 600V, Super Junction N-Channel Power MOSFET SRC60R360B General Description Symbol The Sanrise SRC60R360B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

Datasheet 450m, 600V, Super Junction N-Channel Power MOSFET SRC60R450B General Description Symbol The Sanrise SRC60R450B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

Datasheet82m, 650V, Super Junction N-Channel Power MOSFET SRC65R082BGeneral Description SymbolThe Sanrise SRC65R082B is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity an

Datasheet 108m, 600V, Super Junction N-Channel Power MOSFET SRC60R108B General Description Symbol The Sanrise SRC60R108B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

Datasheet 30m, 600V, Super Junction N-Channel Power MOSFET SRC60R030BS General Description Symbol The Sanrise SRC60R030BS is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

Datasheet22m, 600V, Super Junction N-Channel Power MOSFET SRC60R022FBSGeneral Description SymbolThe Sanrise SRC60R022FBS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensit

Datasheet145m, 650V, Super Junction N-Channel Power MOSFET SRC65R145BGeneral Description SymbolThe Sanrise SRC65R145B is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity a

Datasheet 360m, 600V, Super Junction N-Channel Power MOSFET SRC60R360 General Description Symbol The Sanrise SRC60R360 is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power d

Datasheet72m, 650V, Super Junction N-Channel Power MOSFET SRC65R072BGeneral Description SymbolThe Sanrise SRC65R072B is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity an

Datasheet22m, 600V, Super Junction N-Channel Power MOSFET SRC60R022FBSGeneral Description SymbolThe Sanrise SRC60R022FBS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensit

Datasheet 230m, 600V, Super Junction N-Channel Power MOSFET SRC60R230B General Description Symbol The Sanrise SRC60R230B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

Datasheet 220m, 650V, PDFN8*8, Super Junction N-Channel Power MOSFET SRC65R220 General Description Symbol The Sanrise SRC65R220 is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior

Datasheet340m, 600V, Super Junction N-Channel Power MOSFET SRC65R340ECGeneral Description SymbolThe Sanrise SRC65R340EC is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

Datasheet 145m, 600V, Super Junction N-Channel Power MOSFET SRC60R145B General Description Symbol The Sanrise SRC60R145B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

Datasheet29m, 600V, Super Junction N-Channel Power MOSFET SRC60R029FBSGeneral Description SymbolThe Sanrise SRC60R029FBS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensit

Datasheet42m, 650V, Super Junction N-Channel Power MOSFET SRC65R042BGeneral Description SymbolThe Sanrise SRC65R042B is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity an

Datasheet 420m, 600V, Super Junction N-Channel Power MOSFET SRC60R420 General Description Symbol The Sanrise SRC60R420 is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power d

Datasheet17m, 600V, Super Junction N-Channel Power MOSFET SRC60R017FBGeneral Description SymbolThe Sanrise SRC60R017FB is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

Datasheet 1.3, 650V, Super Junction N-Channel Power MOSFET SRC65R1K3ES General Description Symbol The Sanrise SRC65R1K3ES is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

Datasheet 290m, 650V, Super Junction N-Channel Power MOSFET SRC65R290E General Description Symbol The Sanrise SRC65R290E is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

Datasheet330m, 650V, Super Junction N-Channel Power MOSFET SRC65R330BGeneral Description SymbolThe Sanrise SRC65R330B is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity a

Datasheet78m, 600V, Super Junction N-Channel Power MOSFET SRC60R078BSGeneral Description SymbolThe Sanrise SRC60R078BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

Datasheet 650m, 650V, Super Junction N-Channel Power MOSFET SRC65R650B General Description Symbol The Sanrise SRC65R650B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

Datasheet 680m, 600V, Super Junction N-Channel Power MOSFET SRC60R680E General Description Symbol The Sanrise SRC60R680E is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

Datasheet800m, 650V, Super Junction N-Channel Power MOSFET SRC65R800M2General Description SymbolThe Sanrise SRC65R800M2 is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

Datasheet 800m, 650V, Super Junction N-Channel Power MOSFET SRC65R800E General Description Symbol The Sanrise SRC65R800E is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

Datasheet 180m, 650V, Super Junction N-Channel Power MOSFET SRC65R180 General Description Symbol The Sanrise SRC65R180 is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power d

Datasheet24m, 650V, Super Junction N-Channel Power MOSFET SRC65R024BGeneral Description SymbolThe Sanrise SRC65R024B is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity an

Datasheet 85m, 650V, Super Junction N-Channel Power MOSFET SRC65R085B General Description Symbol The Sanrise SRC65R085B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

Datasheet100m, 600V, Super Junction N-Channel Power MOSFET SRC60R100BSGeneral Description SymbolThe Sanrise SRC60R100BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

Datasheet170m, 650V, Super Junction N-Channel Power MOSFET SRC65R170BGeneral Description SymbolThe Sanrise SRC65R170B is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity a

Datasheet 125m, 600V, Super Junction N-Channel Power MOSFET SRC60R125B General Description Symbol The Sanrise SRC60R125B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

Datasheet100m, 650V, Super Junction N-Channel Power MOSFET SRC65R100BGeneral Description SymbolThe Sanrise SRC65R100B is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity a

Datasheet68m, 650V, Super Junction N-Channel Power MOSFET SRC65R068BSGeneral Description SymbolThe Sanrise SRC65R068BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

Datasheet160m, 600V, Super Junction N-Channel Power MOSFET SRC60R160BSGeneral Description SymbolThe Sanrise SRC60R160BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

Datasheet145m, 600V, Super Junction N-Channel Power MOSFET SRC60R145BSGeneral Description SymbolThe Sanrise SRC60R145BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

Datasheet68m, 650V, Super Junction N-Channel Power MOSFET SRC65R068BSGeneral Description SymbolThe Sanrise SRC65R068BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

Datasheet100m, 650V, Super Junction N-Channel Power MOSFET SRC65R100BSGeneral Description SymbolThe Sanrise SRC65R100BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

Datasheet 950m, 600V, Super Junction N-Channel Power MOSFET SRC60R950E General Description Symbol The Sanrise SRC60R950E is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

STC6301D N&P Pair Enhancement Mode MOSFET 23.0A / -18.0A DESCRIPTION The STC6301D is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage applicati

STC6332STC6332STC6332STC6332N&P Pair Enhancement Mode MOSFET0.95A / -1ADESCRIPTIONDESCRIPTIONDESCRIPTIONDESCRIPTIONThe STC6332 is the N & P-Channel enhancement mode power field effect transistorusing high cell density DMOS trench technology. This high density process isespecially tailored to minimize on-state resistance and provide superior switchingperformance. This d

STC6614 N&P Pair Enhancement Mode MOSFET 7.0A / -5.0A DESCRIPTION The STC6614 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application

STC6602 Dual N&P Channel Enhancement Mode MOSFET 2.8A/-2.8ADESCRIPTION The STC6602 is the dual N&P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as not

SPC6605 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC6605 is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-state

SPC6602 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC6602 is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density , DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-sta

SPC6604 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC6604 is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density , DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-sta

SPC6601 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC6601 is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density , DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-sta

SPC6332 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC6332 is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density , DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-sta

WM4C62160A 20V Common-Drain Dual N-Channel MOSFET Description V (V) I (A) R TYP (m) SSS S SS(on)WM4C62160A uses advanced power trench technology 14.0 @VGS=4.5V that has been especially tailored to minimize the on-state 14.6 @VGS=4.0V resistance This device is suitable for un-directional or 20 8 15.0 @VGS=3.7V bidirectional load switch, facilitated by its common-drain

WM6C61042A 12V Common-Drain Dual N-Channel MOSFET Description V (V) I (A) R TYP (m) SSS S SS(on)WM6C61042A uses advanced power trench technology 4.2 @VGS=4.5V that has been especially tailored to minimize the on-state 4.5 @VGS=3.8V resistance This device is suitable for un-directional or 12 8 5.2 @VGS=3.1V bidirectional load switch, facilitated by its common-drain

LSC65R380HT /LSD65R380HT / LSE65R380HT /LSF65R380HT/LSDN65R380HTLSH65R380HT/LSG65R380HT/LSNC65R380HT/LSN65R380HTLonFETLonten N-channel 650V, 11A, 0.38 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 700VDS j,maxadvanced super junction technology. The resulting R 0.38DS(on),maxdevice has extremely low on resistance, making it

LSC65R290HF/LSG65R290HF/LSH65R290HF/LSD65R290HF/LSF65R290HF/ LSE65R290HFLonFETLonten N-channel 650V, 15A, 0.29 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 700VDS j,maxadvanced super junction technology. The resulting R 0.29DS(on),maxdevice has extremely low on resistance, making it I 45ADMespecially suitable for appli

LSB65R180GF/ LSC65R180GF/ LSD65R180GF/ LSE65R180GF/ LSF65R180GFLonFETLonten N-channel 650V, 20A, 0.18 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated V @ T 700VDS j,maxusing advanced super junction technology. R 0.18DS(on),maxThe resulting device has extremely low on I 60ADMresistance, making it especially suitable for Q 39nCg,typa

LSB60R105HF/LSD60R105HF/LSE60R105HF/LSC60R105HFLonFETLonten N-channel 600V, 40A, 0.105 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.105DS(on),maxdevice has extremely low on resistance, making it I 120ADMespecially suitable for applications which require

LSC65R380GT/LSD65R380GT/LSE65R380GT/LSF65R380GT/LSG65R380GTLonFETLonten N-channel 650V, 11A, 0.38 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 700VDS j,maxadvanced super junction technology. The resulting R 0.38DS(on),maxdevice has extremely low on resistance, making it I 30ADMespecially suitable for applications which

LSC65R380HT /LSD65R380HT / LSE65R380HT /LSF65R380HT/LSG65R380HT LonFET Lonten N-channel 650V, 11A, 0.38 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 700V advanced super junction technology. The resulting RDS(on),max 0.38 device has extremely low on resistance, making it IDM 30A especially suitable for applications wh

LSC65R380GF/LSD65R380GF/LSE65R380GF/LSF65R380GF/LSG65R380GFLonFETLonten N-channel 650V, 11A, 0.38 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 700VDS j,maxadvanced super junction technology. The resulting R 0.38DS(on),maxdevice has extremely low on resistance, making it I 30ADMespecially suitable for applications which

LSB60R125HT/LSC60R125HT/LSD60R125HT/LSE60R125HT LonFET Lonten N-channel 600V, 25A, 0.125 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 650V advanced super junction technology. The resulting RDS(on),max 0.125 device has extremely low on resistance, making it IDM 75A especially suitable for applications which require Qg

LSD60R280HT/LSG60R280HT/LSH60R280HT/LSB60R280HTLSF60R280HT/ LSE60R280HT/ LSC60R280HTLonFETLonten N-channel 600V, 15A, 0.28 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.28DS(on),maxdevice has extremely low on resistance, making it I 45ADMespecially suitab

LSB60R180HT/ LSC60R180HT/ LSD60R180HT / LSE60R180HT/ LSF60R180HT/LSNC60R180HT LonFET Lonten N-channel 600V, 20A, 0.18 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated VDS @ Tj,max 650V using advanced super junction technology. RDS(on),max 0.18 The resulting device has extremely low on IDM 60A resistance, making it especially suitable fo

LSD65R280HT/LSG65R280HT/LSH65R280HT/LSF65R280HT/LSE65R280HT/LSC65R280HTLonFETLonten N-channel 650V, 15A, 0.28 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 700VDS j,maxadvanced super junction technology. The resulting R 0.28DS(on),maxdevice has extremely low on resistance, making it I 45ADMespecially suitable for applic

LSC60R650HT/LSD60R650HT/LSG60R650HT/LSH60R650HTLonFETLonten N-channel 600V, 7A, 0.65 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.65DS(on),maxdevice has extremely low on resistance, making it I 21ADMespecially suitable for applications which require Q 13.1 n

LSB65R180GT/ LSC65R180GT/ LSD65R180GT/ LSE65R180GT/ LSF65R180GTLonFETLonten N-channel 650V, 20A, 0.18 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated V @ T 700VDS j,maxusing advanced super junction technology. RDS(on),max 0.18I 60AThe resulting device has extremely low on DMQ 39nCresistance, making it especially suitable for g,typapp

LSB65R180HT/ LSC65R180HT/ LSD65R180HT/ LSE65R180HT/ LSF65R180HT/LSNC65R180HTLonFETLonten N-channel 650V, 20A, 0.18 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated V @ T 700VDS j,maxusing advanced super junction technology. R 0.18DS(on),maxThe resulting device has extremely low on I 60ADMresistance, making it especially suitable for Q

LSC65R650HT/LSD65R650HT/ LSDN65R650HT/ LSE65R650HT/LSG65R650HT/LSH65R650HTLonFETLonten N-channel 650V, 7A, 0.65 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 700VDS j,maxadvanced super junction technology. The resulting R 0.65DS(on),maxdevice has extremely low on resistance, making it I 21ADMespecially suitable for appl

LSC65R380GT/LSD65R380GT/LSH65R380GT/LSE65R380GT/LSF65R380GT/LSG65R380GTLonFETLonten N-channel 650V, 11A, 0.38 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 700VDS j,maxadvanced super junction technology. The resulting R 0.38DS(on),maxdevice has extremely low on resistance, making it I 30ADMespecially suitable for applic

LSB65R125HT/LSC65R125HT/LSD65R125HT/LSE65R125HT/LSNC65R125HT/LSF65R125HTLonFETLonten N-channel 650V, 25A, 0.125 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 700VDS j,maxadvanced super junction technology. The resulting R 0.125DS(on),maxdevice has extremely low on resistance, making it I 75ADMespecially suitable for app

LSD60R290HF/LSG60R290HF/LSH60R290HF//LSC60R290HFLSF60R290HF/ LSE60R290HFLonFETLonten N-channel 600V, 15A, 0.29 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.29DS(on),maxdevice has extremely low on resistance, making it I 45ADMespecially suitable for appli

LSC65R570GT/LSD65R570GT/LSG65R570GT/ LSH65R570GT/ LSE65R570GT / LSF65R570GT LonFET Lonten N-channel 650V, 7A, 0.57 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 700V advanced super junction technology. The resulting RDS(on),max 0.57 device has extremely low on resistance, making it IDM 21A especially suitable for ap

SPC65R90G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 700 DS J New Technology For High Voltage Device R max. at 25oC (m) V =10V 90 DS(on) GS ID=30A(Vgs=10V) Q max. (nC) 85 g Ultra Low Gate Charge Q (nC) 15 gs Improved dv/dt Capability Q (nC) 25 gd RoHS compliant Configu

SPC65R360G,SPE65R360G,SPD65R360G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 700 DS J New Technology For High Voltage Device R max. at 25oC (m) V =10V 360 DS(on) GS ID=11.5A(Vgs=10V) Q max. (nC) 30 g Ultra Low Gate Charge Q (nC) 8.5 gs Improved dv/dt Capability Q (nC) 7.5 gd

SPC65R180G,SPB65R180G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 700 DS J New Technology For High Voltage Device R max. at 25oC (m) V =10V 180 DS(on) GS ID=20A(Vgs=10V) Q max. (nC) 75 g Ultra Low Gate Charge Q (nC) 17 gs Improved dv/dt Capability Q (nC) 26 gd RoHS Compli

WSC60N03N-Ch MOSFETGeneral Description Product SummeryThe WSC60N03 is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and 30V 4.1m 60Agate charge for most of the synchronous buck converter applications . Applications The WSC60N03 meet the RoHS and Green Product requirement , 100% EAS guaranteed

VBC6P3033www.VBsemi.comDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ()ID (A) TrenchFET Power MOSFETs 0.036 at VGS = - 10 V - 5.2- 30RoHS0.055 at VGS = - 4.5 V - 4.2COMPLIANTAPPLICATIONS Load Switch Battery SwitchS1 S2TSSOP-8G1 G2D1 1 D28S1 2 S27S1 3 S26G1 4 G25Top ViewD1 D2

FDC637ANwww.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET0.030 at VGS = 10 V 6 Low On-Resistance30 4.2 nC0.040 at VGS = 4.5 V 6 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTSOP-6APPLICATIONS DC/DC

FDC638Pwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET- 30 5.1 nC0.054 at VGS = - 4.5 V - 4.1APPLICATIONS Load SwitchTSOP-6(4) STop V iew1 6(3) G3 mm523 4(1, 2, 5, 6) D2.85 mmP-Cha

FDC6305Nwww.VBsemi.twDual N-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.022 at VGS = 4.5 V TrenchFET Power MOSFET6.020 1.8 nC 100 % Rg Tested0.028 at VGS = 2.5 V 5.0 Compliant to RoHS Directive 2002/95/ECTSOP-6 D1 D 2 D Top View G1 D1 1 6 G 1

VBC6N2014www.VBsemi.comDual N-Channel MOSFET FEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs0.013 at VGS = 4.5 V Available7.620RoHS*0.020 at VGS = 2.5 V 6.5COMPLIANTDDTSSOP-8 D D 1 8 S S 1 2 7 2 S S G1 G21 3 6 2 G 1 4 G 2 5 S1 S2Top View ABSOLUTE MAXIMUM RATINGS TA =

VBC6N3010www.VBsemi.comDual N-Channel 3 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs0.012 at VGS = 10 V Available8.630RoHS*0.019 at VGS = 4.5 V 7.5COMPLIANTDDTSSOP-8 D D 1 8 S S 1 2 7 2 S S G1 G21 3 6 2 G 1 4 G 2 5 S1 S2Top View ABSOLUTE MAXIMUM RA

FDC6312Pwww.VBsemi.twDual P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.075 at VGS = - 4.5V - 4.0 TrenchFET Power MOSFET- 20 2.7 nC0.100 at VGS = - 2.5 V - 3.2 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch for Portable Ap

FDC658APwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET- 30 5.1 nC0.054 at VGS = - 4.5 V - 4.1APPLICATIONS Load SwitchTSOP-6(4) STop V iew1 6(3) G3 mm523 4(1, 2, 5, 6) D2.85 mmP-Ch

ZXMC6A09DN8Twww.VBsemi.twN- and P-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.028 at VGS = 10 V 5.3 TrenchFET Power MOSFETN-Channel 60 6 nC0.031 at VGS = 4.5 V 4.7 100 % Rg and UIS Tested0.050 at VGS = - 10 V - 4.9APPLICATIONSP-Channel - 60 8 nC0.060 at

FDC6321Cwww.VBsemi.twN- and P-Channel 2 V (D-S) MOSFET0 FEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.024 at VGS = 10 V 5.5 TrenchFET Power MOSFETN-Channel 200.036 at VGS = 4.5 V 4.2 100 % Rg Tested0.069 at VGS = - 10 V - 3.4 Compliant to RoHS Directive 2002/95/ECP-Channel - 200.083 at V

FDC6420Cwww.VBsemi.twN- and P-Channel 2 V (D-S) MOSFET0 FEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.024 at VGS = 10 V 5.5 TrenchFET Power MOSFETN-Channel 200.036 at VGS = 4.5 V 4.2 100 % Rg Tested0.069 at VGS = - 10 V - 3.4 Compliant to RoHS Directive 2002/95/ECP-Channel - 200.083 at V

FDC602Pwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET- 30 5.1 nC0.054 at VGS = - 4.5 V - 4.1APPLICATIONS Load SwitchTSOP-6(4) STop V iew1 6(3) G3 mm523 4(1, 2, 5, 6) D2.85 mmP-Cha

VBC6N2022www.VBsemi.comDual N-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs0.022 at VGS = 4.5 V Available6.625RoHS*0.032 at VGS = 2.5 V 5.5COMPLIANTDDTSSOP-8 D D 1 8 S S 1 2 7 2 S S G1 G21 3 6 2 G 1 4 G 2 5 S1 S2Top View ABSOLUTE MAXIMUM RA

FDC6327Cwww.VBsemi.twN- and P-Channel 2 V (D-S) MOSFET0 FEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.024 at VGS = 10 V 5.5 TrenchFET Power MOSFETN-Channel 200.036 at VGS = 4.5 V 4.2 100 % Rg Tested0.069 at VGS = - 10 V - 3.4 Compliant to RoHS Directive 2002/95/ECP-Channel - 200.083 at V

FDC6506Pwww.VBsemi.twDual P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.075 at VGS = - 4.5V - 4.0 TrenchFET Power MOSFET- 20 2.7 nC0.100 at VGS = - 2.5 V - 3.2 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch for Portable Ap

FDC637BNZwww.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET0.030 at VGS = 10 V 6 Low On-Resistance30 4.2 nC0.040 at VGS = 4.5 V 6 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTSOP-6APPLICATIONS DC/DC

V2.5

TPA65R360M,TPB65R360M,TPC65R360M,TPD65R360M,TPP65R360M,TPR65R360M,TPU65R360MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, com

TPP60R840C, TPA60R840C, TPU60R840C, TPD60R840C, TPC60R840C, TPB60R840C Wuxi Unigroup Microelectronics Company 600V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package