(94S-815-AC143T

MCAC75N02Electrical Characteristics @ 25C (Unless Otherwise Specified)Parameter Symbol Test Conditions Min Typ Max UnitStatic CharacteristicsV(BR)DSS VGS=0V, ID=250ADrain-Source Breakdown Voltage 20 VIGSS VDS=0V, VGS =10VGate-Source Leakage Current 100 nAIDSS VDS=16V, VGS=0VZero Gate Voltage Drain Current 1 AVGS(th) VDS=VGS, ID=250AGate-Threshold Voltage 0.3

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MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7600V CoolMOS C7 Power TransistorIPA60R180C7Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS C7 Power TransistorIPA60R180C7TO-220 FP1 DescriptionCoolMOS C7 is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and

UNISONIC TECHNOLOGIES CO., LTD 7N65 Power MOSFET 7.4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

PD- 91868IRG4CC72KBIRG4CC72KB IGBT Die in Wafer FormC600 VSize 7.2Ultra-Fast SpeedShort Circuit RatedG6" WaferEElectrical Characteristics ( Wafer Form )Parameter Description Guaranteed (Min/Max) Test ConditionsVCE (on) Collector-to-Emitter Saturation Voltage 4.5V Max. IC = 10A, TJ = 25C, VGE = 15VV(BR)CES Colletor-to-Emitter Breakdown Voltage 600V Min. TJ = 25C,

PD -9.1668AIRG4ZC70UDINSULATED GATE BIPOLAR TRANSISTOR WITH Surface MountableULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBTFeaturesCn-channel UltraFast IGBT optimized for high switching frequenciesVCES = 600V IGBT co-packaged with HEXFRED ultrafast,ultra-soft recovery antiparallel diodes for use inbridge configurationsVCE(ON)typ = 1.5V Low gate chargeG Low

PD - 91723PRELIMINARYIRG4ZC71KD Surface MountableINSULATED GATE BIPOLAR TRANSISTOR WITHShort Circuit RatedULTRAFAST SOFT RECOVERY DIODE UltraFast IGBTFeatures High short circuit rating optimized for motorCn-channel control, tsc =10s, VCC = 360V , TJ = 125C,VCES = 600V VGE = 15V IGBT co-packaged with HEXFRED ultrafast,VCE(ON)typ = 1.75V ultra-soft-r

PD - 91681AIRG4PSC71UUltraFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C UltraFast switching speed optimized for operatingVCES = 600V frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching Generation 4 IGBT design provides tighterVCE(on) typ. = 1.67VG parameter distribution and higher efficiency (minimum switching and conduct

PD - 94617AIRGC75B60KBDie in Wafer FormFeatures600VC GEN5 Non Punch Through (NPT) TechnologyIC(nom)=75A Low VCE(on)VCE(on) typ.=1.95V 10s Short Circuit Capability Square RBSOA@ IC(nom) @ 25C Positive VCE(on) Temperature CoefficientMotor Control IGBTGBenefitsShort Circuit Rated Benchmark Efficiency for Motor Control ApplicationsE

PD- 91834IRG4CC71KBIRG4CC71KB IGBT Die in Wafer FormC600 VSize 7.1Ultra-Fast SpeedG Circuit Rated Rated6" WaferEElectrical Characteristics ( Wafer Form )Parameter Description Guaranteed (Min/Max) Test ConditionsVCE (on) Collector-to-Emitter Saturation Voltage 4.5V Max. IC = 10A, TJ = 25C, VGE = 15VV(BR)CES Colletor-to-Emitter Breakdown Voltage 600V Min. TJ = 25C, I

PD-97268A2N7632UCIRHLUC7670Z4 RADIATION HARDENED 60V, Combination 1N-1P-CHANNEL LOGIC LEVEL POWER MOSFETTECHNOLOGY SURFACE MOUNT (LCC-6)Product SummaryPart Number Radiation Level RDS(on) ID CHANNEL 0.75 0.89A N IRHLUC7670Z4 100K Rads (Si)1.60 -0.65A P 0.75 0.89A N IRHLUC7630Z4 300K Rads (Si)1.60 -0.65A PLCC-6International Rectifiers R7TM Log

PD- 91765IRG4CC70UBIRG4CC70UB IGBT Die in Wafer FormC600 VSize 7Ultra-Fast SpeedG6" WaferEElectrical Characteristics ( Wafer Form )Parameter Description Guaranteed (Min/Max) Test ConditionsVCE (on) Collector-to-Emitter Saturation Voltage 4.5V Max. IC = 10A, TJ = 25C, VGE = 15VV(BR)CES Colletor-to-Emitter Breakdown Voltage 600V Min. TJ = 25C, ICES = 250A, VGE = 0V

PD- 91867IRG4CC77KBIRG4CC77KB IGBT Die in Wafer FormC600 VSize 7.7Ultra-Fast SpeedG Short Circuit Rated6" WaferEElectrical Characteristics ( Wafer Form )Parameter Description Guaranteed (Min/Max) Test ConditionsVCE (on) Collector-to-Emitter Saturation Voltage 4.5V Max. IC = 10A, TJ = 25C, VGE = 15VV(BR)CES Colletor-to-Emitter Breakdown Voltage 600V Min. TJ = 25C, I

PD - 91682AIRG4PSC71UD UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeatures Generation 4 IGBT design provides tighterVCES = 600V parameter distribution and higher efficiency (minimum switching and conduction losses) thanVCE(on) typ. = 1.67V prior generationsG IGBT co-packaged with HEXFRED ultrafast, ultrasoft recov

PD - 91683BIRG4PSC71KShort Circuit RatedINSULATED GATE BIPOLAR TRANSISTORUltraFast IGBTCFeaturesVCES = 600V Hole-less clip/pressure mount package compatiblewith TO-247 and TO-264, with reinforced pinsVCE(on) typ. = 1.83V High abort circuit rating IGBTs, optimized forGmotorcontrol Minimum switching losses combined with low@VGE = 15V, IC = 60AEconduction

PD-975742N7627UCIRHLUC7970Z4 RADIATION HARDENED60V, DUAL P-CHANNEL LOGIC LEVEL POWER MOSFETTECHNOLOGY SURFACE MOUNT (LCC-6)Product Summary Part Number Radiation Level RDS(on) ID IRHLUC7970Z4 100K Rads (Si) 1.60 -0.65A IRHLUC7930Z4 300K Rads (Si) 1.60 -0.65ALCC-6International Rectifiers R7TM Logic Level Power MOSFETsprovide simple solution to interfacing

PD-975732N7617UC IRHLUC770Z4 RADIATION HARDENED60V, DUAL-N CHANNEL LOGIC LEVEL POWER MOSFETTECHNOLOGY SURFACE MOUNT (LCC-6)Product Summary Part Number Radiation Level RDS(on) ID IRHLUC770Z4 100K Rads (Si) 0.75 0.89A IRHLUC730Z4 300K Rads (Si) 0.75 0.89ALCC-6International Rectifiers R7TM Logic Level Power MOSFETsprovide simple solution to interfacing CMO

PD-94764LIRHLUB7970Z4RADIATION HARDENED JANSR2N7626UBLOGIC LEVEL POWER MOSFET 60V, P-CHANNELSURFACE MOUNT (UB) REF: MIL-PRF-19500/745TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHLUB7970Z4 100K Rads (Si) 1.4 -0.53A JANSR2N7626UB IRHLUB7930Z4 300K Rads (Si) 1.4 -0.53A JANSF2N7626UB UBRefer to Page 11 for 3 Additional Part Num

PD- 95901IRG4PSC71KDPbF Lead-Freewww.irf.com 109/15/04IRG4PSC71KDPbF2 www.irf.comIRG4PSC71KDPbFwww.irf.com 3IRG4PSC71KDPbF4 www.irf.comIRG4PSC71KDPbFwww.irf.com 5IRG4PSC71KDPbF6 www.irf.comIRG4PSC71KDPbFwww.irf.com 7IRG4PSC71KDPbF8 www.irf.comIRG4PSC71KDPbFwww.irf.com 9IRG4PSC71KDPbFCase Outline and Dimensions Super-247Super-247 (TO-

IRGC75B60UB Die in Wafer Form Features GEN5 Non Punch Through (NPT) Technology CLow VCE(on VCES = 600V 10s Short Circuit Capability Square RBSOA IC(Noml) = 75A Positive VCE(on) Temperature Coefficient VCE(on) typ = 2.60V @ IC(nom) @ 25C GUPS IGBT Benefits Short Circuit Rated Benchmark Efficiency for UPS and Welding Applicatio

PD - 91684AIRG4PSC71KDPRELIMINARY Short Circuit RatedINSULATED GATE BIPOLAR TRANSISTOR WITHUltraFast IGBTULTRAFAST SOFT RECOVERY DIODECFeatures Hole-less clip/pressure mount package compatible VCES = 600Vwith TO-247 and TO-264, with reinforced pins High abort circuit rating IGBTs, optimized forVCE(on) typ. = 1.83VmotorcontrolG Minimum switching losses comb

PD - 93871IRGC75B120UBDie in Wafer FormFeaturesFeaturesFeaturesFeaturesFeatures1200VC GEN5 Non Punch Through (NPT) TechnologyIC(nom)=75A UltraFastVCE(on) typ.= 3.1V @ 10s Short Circuit Capability Square RBSOAIC(nom) @ 25C Positive VCE(on) Temperature CoefficientUltraFast IGBTGBenefitsShort Circuit Rated Benchmark Efficiency

PD - 93872IRGC75B120KBDie in Wafer FormFeaturesFeaturesFeaturesFeaturesFeatures1200VC GEN5 Non Punch Through (NPT) TechnologyIC(nom)= 75A Low VCE(on)VCE(on) typ.= 2.1 V @ 10s Short Circuit Capability Square RBSOAIC(nom) @ 25C Positive VCE(on) Temperature CoefficientMotor Control IGBTGBenefitsShort Circuit Rated Benchmark Ef

STP5NC70Z - STP5NC70ZFPSTB5NC70Z - STB5NC70Z-1N-CHANNEL 700V - 1.8 - 4.6A TO-220/FP/DPAK/IPAKZener-Protected PowerMESHIII MOSFETTYPE VDSS RDS(on) IDSTP5NC70Z/FP 700V

STU10NC70ZSTU10NC70ZIN-CHANNEL 700V - 0.58 - 9.4A Max220/I-Max220Zener-Protected PowerMESHIII MOSFETTYPE VDSS RDS(on) IDSTU10NC70Z 700 V

STW9NC70ZN-CHANNEL 700V - 0.90 - 7.5A TO-247Zener-Protected PowerMESHIII MOSFETTYPE VDSS RDS(on) IDSTW9NC70Z 700 V

STP3NC70ZSTP3NC70ZFPN-CHANNEL 700V - 4.1 - 2.5A TO-220/TO-220FPZener-Protected PowerMESHIII MOSFETTYPE VDSS RDS(on) IDSTP3NC70Z 700V

STD2NC70ZSTD2NC70Z-1N-CHANNEL 700V - 4.1 - 2.3A DPAK/IPAKZener-Protected PowerMESHIII MOSFETTYPE VDSS RDS(on) IDSTD2NC70Z 700V

STP2NC70Z, STP2NC70ZFPSTD1NC70Z, STD1NC70Z-1N-CHANNEL 700V - 7.3 - 1.4A TO-220/FP/DPAK/IPAKZener-Protected PowerMESHIII MOSFETTYPE VDSS RDS(on) ID PwSTP2NC70Z 700 V

STP8NC70Z - STP8NC70ZFPSTB8NC70Z - STB8NC70Z-1N-CHANNEL 700V - 0.90 - 6.8A TO-220/FP/D2PAK/I2PAKZener-Protected PowerMESHIII MOSFETTYPE VDSS RDS(on) IDSTP8NC70Z/FP 700V

STW8NC70ZN-CHANNEL 700V - 1.1 - 7A TO-247Zener-Protected PowerMESHIII MOSFETTYPE VDSS RDS(on) IDSTW8NC70Z 700 V

STP7NC70Z - STP7NC70ZFPSTB7NC70Z - STB7NC70Z-1N-CHANNEL 700V - 1.1 - 6A TO-220/FP/D2PAK/I2PAKZener-Protected PowerMESHIII MOSFETTYPE VDSS RDS(on) IDSTP7NC70Z/FP 700V

STW10NC70ZN-CHANNEL 700V - 0.58 - 10.6A TO-247Zener-Protected PowerMESHIII MOSFETTYPE VDSS RDS(on) IDSTW10NC70Z 700 V

2SC752(G)TM TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC752(G)TM Ultra High Speed Switching Applications Unit: mm Computer, Counter Applications High transition frequency: fT = 400 MHz (typ.) Low saturation voltage: V = 0.3 V (max) CE (sat) High speed switching time: t = 15 ns (typ.) stgMaximum Ratings (Ta == 25C) ==Characteristics

2SC732TM TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE (PCT PROCESS) 2SC732TM LOW NOISE AUDIO AMPLIFIER APPLICATIONS Unit in mm High Breakdomn Voltage : VCEO = 50V Excellent hFE Linearity : h (I = 0.1mA)/h (I = 2mA) = 0.95 (Typ.) FE C FE C Low Noise : NF (1) = 0.5dB (Typ.) (f = 100Hz) : NF (2) = 0.2dB (Typ.) (f = 1kHz) MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC

TC7W14F/FU/FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7W14F,TC7W14FU,TC7W14FK Schmitt Inverter The TC7W14 is high speed C2MOS Schmitt Inverter fabricated TC7W14F with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the C2MOS low power dissipation. Pin configuration and function are the same

2SC732TM TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE (PCT PROCESS) 2SC732TM LOW NOISE AUDIO AMPLIFIER APPLICATIONS Unit in mm High Breakdomn Voltage : VCEO = 50V Excellent hFE Linearity : h (I = 0.1mA)/h (I = 2mA) = 0.95 (Typ.) FE C FE C Low Noise : NF (1) = 0.5dB (Typ.) (f = 100Hz) : NF (2) = 0.2dB (Typ.) (f = 1kHz) MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC

TC7SZ125F/FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SZ125F,TC7SZ125FU Bus Buffer 3-State Output TC7SZ125F Features High output current: 24 mA (min) at VCC = 3 V Super high speed operation: tpd 2.6 ns (typ.) at VCC = 5 V, 50 pF Operation voltage range: VCC = 1.8 to 5.5 V 5.5-V tolerant inputs 5.5-V power down protection output

TC7SZ05F/FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SZ05F,TC7SZ05FU Inverter (Open Drain) Features TC7SZ05F High output current: 24 mA (min) at VCC = 3V Super high speed operation: tpZL= 1.9 ns (typ.) at VCC = 5 V, 50 pF Operation voltage range: VCC (opr) = 1.8 to 5.5 V 5.5-V tolerant input 5.5-V power down protection output (SM

February 2004 FDC796N 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 12.5 A, 30 V. RDS(ON) = 9 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 12 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for High

July 2007FJC790PNP Epitaxial Silicon Transistor Camera Strobe Flash Application Complement to FJC690 High Collector Current Low Collector-Emitter Saturation VoltageMarking7 9 0Y W WSOT-891Weekly code1. Base 2. Collector 3. EmitterYear codehFEAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base V

January 2011FDMC7660DCN-Channel Dual CoolTM PowerTrench MOSFET 30 V, 40 A, 2.2 mFeatures General Description Dual CoolTM Top Side Cooling PQFN packageThis N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 2.2 m at VGS = 10 V, ID = 22 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 3.3 m at

June 2009FDMC7200Dual N-Channel PowerTrench MOSFET 30 V, 12 m and 23.5 mFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual Power33 (3mm x 3mm MLP) package. The switch node Max rDS(on) = 23.5 m at VGS = 10 V, ID = 6 Ahas been internally connected to enable easy placement and Max rDS(on) = 38 m at VGS = 4.5

January 2010FDMC7572SN-Channel Power Trench SyncFETTM 25 V, 40 A, 3.15 mFeatures General Description Max rDS(on) = 3.15 m at VGS = 10 V, ID = 22.5 AThe FDMC7572S has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 4.7 m at VGS = 4.5 V, ID = 18 Apackage technologies have been combined to offer the lowe

November 2011FDMC7696N-Channel PowerTrench MOSFET 30 V, 12 A, 11.5 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 11.5 m at VGS = 10 V, ID = 12 ASemiconductors advanced Power Trench process that has Max rDS(on) = 14.5 m at VGS = 4.5 V, ID = 10 Abeen especially tailored to minimize the on-state resistance.This device

May 2002 NDC7001C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N & P-Channel Enhancement Mode Field Q1 0.51 A, 60V. RDS(ON) = 2 @ VGS = 10 V Effect Transistors are produced using Fairchilds RDS(ON) = 4 @ VGS = 4.5 V proprietary, high cell density, DMOS technology. This very high density process has been des

March 2010FDMC7672N-Channel Power Trench MOSFET 30 V, 16.9 A, 5.7 m Features General Description Max rDS(on) = 5.7 m at VGS = 10 V, ID = 16.9 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 7.0 m at VGS = 4.5 V, ID = 15.0 Abeen especially tailored to minimize the on-state resistance. This High p

July 2013FDMC7208SDual N-Channel PowerTrench MOSFET Q1: 30 V, 12 A, 9.0 m Q2: 30 V, 16 A, 6.4 mFeatures General DescriptionQ1: N-ChannelThis device includes two 30V N-Channel MOSFETs in a dual Power 33 (3 mm X 3 mm MLP) package. The package is en- Max rDS(on) = 9.0 m at VGS = 10 V, ID = 12 Ahanced for exceptional thermal performance. Max rDS(on) = 11.0 m at VGS =

June 2010FDMC7664N-Channel PowerTrench MOSFET 30 V, 18.8 A, 4.2 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 4.2 m at VGS = 10 V, ID = 18.8 ASemiconductors advanced Power Trench process that has Max rDS(on) = 5.5 m at VGS = 4.5 V, ID = 16.1 Abeen especially tailored to minimize the on-state resistance. This de

December 2009FDMC7660SN-Channel Power Trench SyncFET 30 V, 20 A, 2.2 mFeatures General Description Max rDS(on) = 2.2 m at VGS = 10 V, ID = 20 A The FDMC7660S has been designed to minimize losses in power conversion applications. Advancements in both silicon Max rDS(on) = 2.95 m at VGS = 4.5 V, ID = 18 Aand package technologies have been combined to offer the Hi

September 2010FDMC7672SN-Channel Power Trench SyncFETTM 30 V, 14.8 A, 6.0 mFeatures General DescriptionThis FDMC7672S is produced using Fairchild Semiconductors Max rDS(on) = 6.0 m at VGS = 10 V, ID = 14.8 Aadvanced Power Trench process that has been especially Max rDS(on) = 7.1 m at VGS = 4.5 V, ID = 12.4 Atailored to minimize the on-state resistance. This d

September 2010FDMC7692SN-Channel Power Trench SyncFETTM 30 V, 12.5 A, 9.3 mFeatures General DescriptionThis FDMC7692S is produced using Fairchild Semiconductors Max rDS(on) = 9.3 m at VGS = 10 V, ID = 12.5 Aadvanced Power Trench process that has been especially Max rDS(on) = 13.6 m at VGS = 4.5 V, ID = 10.4 Atailored to minimize the on-state resistance. This

May 2000Revised December 2005NC7WB33062-Bit Low Power Bus Switch General Description FeaturesThe NC7WB3306 is a 2-bit ultra high-speed CMOS FET bus Space saving US8 surface mount packageswitch with TTL-compatible active LOW control inputs. The low MicroPak Pb-Free leadless packageOn Resistance of the switch allows inputs to be connected tooutputs with minimal propagation delay

June 2014FDMC7200SDual N-Channel PowerTrench MOSFETs 30 V, 22 m, 10 m Features General DescriptionThis device includes two specialized N-Channel MOSFETs in a Q1: N-Channeldual power33 (3mm X 3mm MLP) package. The switch node has Max rDS(on) = 22 m at VGS = 10 V, ID = 6 Abeen internally connected to enable easy placement and routing of synchronous buck converters. Th

December 2009FDMC7570SN-Channel Power Trench SyncFETTM 25 V, 40 A, 2 mFeatures General DescriptionThe FDMC7570S has been designed to minimize losses in Max rDS(on) = 2 m at VGS = 10 V, ID = 27 Apower conversion application. Advancements in both silicon and Max rDS(on) = 2.9 m at VGS = 4.5 V, ID = 21.5 Apackage technologies have been combined to offer the lowest

June 2011FDMC7678N-Channel Power Trench MOSFET 30 V, 19.5 A, 5.3 mFeatures General Description Max rDS(on) = 5.3 m at VGS = 10 V, ID = 17.5 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 6.8 m at VGS = 4.5 V, ID = 15.0 Abeen especially tailored to minimize the on-state resistance. This High

April 2012FDMC7582N-Channel PowerTrench MOSFET 25 V, 49 A, 5.0 mFeatures General Description Max rDS(on) = 5.0 m at VGS = 10 V, ID = 16.7 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 7.5 m at VGS = 4.5 V, ID = 13.6 Aringing of DC/DC converters using either synchronous or State-of-th

December 2009FDMC7660N-Channel PowerTrench MOSFET 30 V, 20 A, 2.2 m Features General Description Max rDS(on) = 2.2 m at VGS = 10 V, ID = 20 AThis N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has Max rDS(on) = 3.3 m at VGS = 4.5 V, ID = 18 Abeen especially tailored to minimize the on-state resistance. This High perfo

March 2010FDMC7680N-Channel Power Trench MOSFET 30 V, 14.8 A, 7.2 m Features General Description Max rDS(on) = 7.2 m at VGS = 10 V, ID = 14.8 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 9.5 m at VGS = 4.5 V, ID = 12.4 Abeen especially tailored to minimize the on-state resistance. This High p

February 2004 FDC796N 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 12.5 A, 30 V. RDS(ON) = 9 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 12 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for High

September 2010FDMC7692N-Channel Power Trench MOSFET 30 V, 13.3 A, 8.5 m Features General Description Max rDS(on) = 8.5 m at VGS = 10 V, ID = 13.3 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 11.5 m at VGS = 4.5 V, ID = 10.6 Abeen especially tailored to minimize the on-state resistance. This H

March 1996 NDC7002NDual N-Channel Enhancement Mode Field Effect Transistor General Description FeaturesThese dual N-Channel enhancement mode power field0.51A, 50V, RDS(ON) = 2 @ VGS=10Veffect transistors are produced using Fairchild'sHigh density cell design for low RDS(ON).proprietary, high cell density, DMOS technology. Thisvery high density process has been designed to m

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MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7600V CoolMOS C7 Power TransistorIPP60R040C7Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS C7 Power TransistorIPP60R040C7TO-2201 DescriptionCoolMOS C7 is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle a

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPA65R125C7Data SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPA65R125C7TO-220 FP1 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andp

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7600V CoolMOS C7 Power TransistorIPP60R099C7Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS C7 Power TransistorIPP60R099C7TO-2201 DescriptionCoolMOS C7 is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle a

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPW65R190C7Data SheetRev. 2.1FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPW65R190C7TO-2471 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpion

IPA60R099C7MOSFETPG-TO 220 FP600V CoolMOS C7 Power DeviceCoolMOS C7 is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.600V CoolMOS C7 series combines the experience of the leading SJMOSFET supplier with high class innovation.The 600V C7 is the first technology ever w

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPL65R070C7Data SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPL65R070C7ThinPAK 8x81 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPA65R095C7Data SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPA65R095C7TO-220 FP1 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andp

SIGC76T60R3E IGBT3 Chip Features: This chip is used for: 600V Trench & Field Stop technology power moduleC low VCE(sat) low turn-off losses Applications: short tail current drives positive temperature coefficient G easy parallelingE Chip Type VCE IC Die Size PackageSIGC76T60R3E 600V 150A 7.87 x 9.69 mm2 sawn on foil Mechanical Parame

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPA65R065C7Data SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPA65R065C7TO-220 FP1 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andp

IGC70T120T8RLIGBT4 Low Power ChipFeatures: Recommended for: 1200V Trench & Field stop technology low / medium power modules C low switching losses positive temperature coefficientApplications: easy paralleling low / medium power drives Qualified according to JEDEC for targetGapplications EChip Type VCE ICn1 ) Die Size PackageIGC70T120T8RL 1200V 75

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPB65R125C7Data SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPB65R125C7DPAK1 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and tab

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7600V CoolMOS C7 Power TransistorIPP60R060C7Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS C7 Power TransistorIPP60R060C7TO-2201 DescriptionCoolMOS C7 is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle a

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPZ65R045C7Data SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPZ65R045C7PG-TO 247-41 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and

IGC70T120T6RL IGBT4 Low Power Chip FEATURES: 1200V Trench + Field Stop technology This chip is used for:C low switching losses low / medium power modules positive temperature coefficient easy paralleling Applications: G low / medium power drives E Chip Type VCE ICn Die Size Package IGC70T120T6RL 1200V 75A 9.12 x 7.71 mm2 sawn on foil MECHANICA

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MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7600V CoolMOS C7 Power TransistorIPB60R120C7Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS C7 Power TransistorIPB60R120C7DPAK1 DescriptionCoolMOS C7 is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and ta

IGC76T65T8RMIGBT3 Chip Medium PowerFeatures: Recommended for: 650V Trench & Field Stop technology power modulesC high short circuit capability, self limitingshort circuit current positive temperature coefficient Applications: easy paralleling drivesG Qualified according to JEDEC for targetEapplicationsChip Type VCE ICn Die Size PackageIGC76T65T

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPZ65R019C7Data SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPZ65R019C7PG-TO 247-41 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7600V CoolMOS C7 Power TransistorIPZ60R099C7Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS C7 Power TransistorIPZ60R099C7PG-TO 247-41 DescriptionCoolMOS C7 is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle a

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPP65R065C7Data SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPP65R065C7TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle and

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPD65R225C7Data SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPD65R225C7DPAK1 DescriptionCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andp

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPL65R195C7Data SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPL65R195C7ThinPAK 8x81 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPW65R019C7Data SheetRev. 2.1FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPW65R019C7TO-2471 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpion

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7600V CoolMOS C7 Power TransistorIPW60R180C7Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS C7 Power TransistorIPW60R180C7TO-2471 DescriptionCoolMOS C7 is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andp

IAUC70N08S5N074OptiMOS-5 Power-TransistorProduct SummaryVDS 80 VRDS(on) 7.4mWID 70 AFeatures N-channel - Enhancement modePG-TDSON-8 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 1 100% Avalanche tested1Type Package MarkingPG-TDSON-8 5N08074IAUC70N08S5N074Maximum ratings, at

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7600V CoolMOS C7 Power TransistorIPZ60R040C7Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS C7 Power TransistorIPZ60R040C7PG-TO 247-41 DescriptionCoolMOS C7 is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle a

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7600V CoolMOS C7 Power TransistorIPW60R120C7Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS C7 Power TransistorIPW60R120C7TO-2471 DescriptionCoolMOS C7 is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andp

IPA65R190C7MOSFETPG-TO 220 FP650V CoolMOS C7 Power DeviceCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.CoolMOS C7 series combines the experience of the leading SJMOSFET supplier with high class innovation. The product portfolioprovides all benefits of fas

IGC70T120T6RM IGBT4 Medium Power Chip FEATURES: 1200V Trench + Field Stop technology This chip is used for:C low switching losses medium power modules soft turn off positive temperature coefficient Applications: easy paralleling G medium power drives E Chip Type VCE ICn Die Size Package IGC70T120T6RM 1200V 75A 9.12 x 7.71 mm2 sawn on foil

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPZ65R095C7Data SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPZ65R095C7PG-TO 247-41 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPP65R190C7Data SheetRev. 2.1FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPP65R190C7TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle and

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7600V CoolMOS C7 Power TransistorIPP60R180C7Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS C7 Power TransistorIPP60R180C7TO-2201 DescriptionCoolMOS C7 is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle a

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPL65R130C7Data SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPL65R130C7ThinPAK 8x81 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and

IPB60R099C7MOSFETDPAK600V CoolMOS C7 Power TransistorCoolMOS C7 is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.600V CoolMOS C7 series combines the experience of the leading SJMOSFET supplier with high class innovation.21The 600V C7 is the first technolo

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPL65R099C7Data SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPL65R099C7ThinPAK 8x81 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and

IPC70N04S5-4R6OptiMOS-5 Power-TransistorProduct Summary VDS 40 V RDS(on),max 4.6 mW ID 70 A FeaturesPG-TDSON-8-33 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanch

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPP65R225C7Data SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPP65R225C7TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle and

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPD65R190C7Data SheetRev. 2.1FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPD65R190C7DPAK1 DescriptionCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andp

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPP65R125C7Data SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPP65R125C7TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle and

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7600V CoolMOS C7 Power TransistorIPP60R120C7Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS C7 Power TransistorIPP60R120C7TO-2201 DescriptionCoolMOS C7 is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle a

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPP65R045C7Data SheetRev. 2.1FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPP65R045C7TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle and

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPW65R045C7Data SheetRev. 2.1FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPW65R045C7TO-2471 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpion

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7600V CoolMOS C7 Power TransistorIPW60R040C7Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS C7 Power TransistorIPW60R040C7TO-2471 DescriptionCoolMOS C7 is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andp

IPD60R180C7MOSFETDPAK600V CoolMOS C7 Power DeviceCoolMOS C7 is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.600V CoolMOS C7 series combines the experience of the leading SJMOSFET supplier with high class innovation.21The 600V C7 is the first technology eve

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPB65R190C7Data SheetRev. 2.1FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPB65R190C7DPAK1 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and tab

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPW65R065C7Data SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPW65R065C7TO-2471 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpion

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7600V CoolMOS C7 Power TransistorIPB60R060C7Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS C7 Power TransistorIPB60R060C7DPAK1 DescriptionCoolMOS C7 is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and ta

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7600V CoolMOS C7 Power TransistorIPA60R120C7Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS C7 Power TransistorIPA60R120C7TO-220 FP1 DescriptionCoolMOS C7 is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPB65R045C7Data SheetRev. 2.1FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPB65R045C7DPAK1 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and tab

IGC70T120T8RMIGBT4 Medium Power ChipFeatures: Recommended for: 1200V Trench + Field stop technology medium power modulesC low switching losses soft turn offApplications: positive temperature coefficient medium power drives easy parallelingG Qualified according to JEDEC for targetEapplicationsChip Type VCE ICn1 ) Die Size PackageIGC70T120T

IPB60R180C7MOSFETDPAK600V CoolMOS C7 Power TransistorCoolMOS C7 is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.600V CoolMOS C7 series combines the experience of the leading SJMOSFET supplier with high class innovation.21The 600V C7 is the first technolo

SIGC76T65R3E IGBT3 Chip Features: Recommended for: 650V Trench & Field Stop technology power modules low VCE(sat) C low turn-off losses Applications: short tail current drives positive temperature coefficient easy parallelingGE Qualified according to JEDEC for target applications Chip Type VCE ICn1 ) Die Size PackageSIGC76T65R3E

IPC70N04S5L-4R2OptiMOS-5 Power-TransistorProduct Summary VDS 40 V RDS(on),max 4.2 mW ID 70 A FeaturesPG-TDSON-8-33 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanch

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPZ65R065C7Data SheetRev. 2.1FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPZ65R065C7PG-TO 247-41 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPW65R095C7Data SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPW65R095C7TO-2471 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpion

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7600V CoolMOS C7 Power TransistorIPW60R099C7Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS C7 Power TransistorIPW60R099C7TO-2471 DescriptionCoolMOS C7 is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andp

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPW65R125C7Data SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPW65R125C7TO-2471 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpion

SIGC76T60R3E IGBT3 Chip Features: This chip is used for: 600V Trench & Field Stop technology power moduleC low VCE(sat) low turn-off losses Applications: short tail current drives positive temperature coefficient G easy parallelingE Chip Type VCE IC Die Size PackageSIGC76T60R3E 600V 150A 7.87 x 9.69 mm2 sawn on foil Mechanical Parame

IPB60R040C7MOSFETDPAK600V CoolMOS C7 Power TransistorCoolMOS C7 is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.600V CoolMOS C7 series combines the experience of the leading SJMOSFET supplier with high class innovation.21The 600V C7 is the first technolo

IGC70T120T8RQHigh Speed IGBT in Trench and Fieldstop TechnologyFeatures: Recommended for: 1200V Trench + Field stop technology power modulesC low switching losses positive temperature coefficientApplications: easy paralleling high frequency drivesG UPSE Welding Solar invertersChip Type VCE ICn1) Die Size PackageIGC70T120T8RQ 1200V 75A

IPL60R185C7MOSFETThinPAK 8x8600V CoolMOS C7 Power TransistorCoolMOS C7 is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.600V CoolMOS C7 series combines the experience of the leading SJMOSFET supplier with high class innovation.The 600V C7 is the first technology eve

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPB65R065C7Data SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPB65R065C7DPAK1 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and tab

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPB65R095C7Data SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPB65R095C7DPAK1 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and tab

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPP65R095C7Data SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPP65R095C7TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle and

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPA65R045C7Data SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPA65R045C7TO-220 FP1 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andp

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7600V CoolMOS C7 Power TransistorIPZ60R060C7Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS C7 Power TransistorIPZ60R060C7PG-TO 247-41 DescriptionCoolMOS C7 is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle a

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPB65R225C7Data SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPB65R225C7DPAK1 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and tab

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPL65R230C7Data SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPL65R230C7ThinPAK 8x81 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and

IPL60R065C7MOSFETThinPAK 8x8600V CoolMOS C7 Power TransistorCoolMOS C7 is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.600V CoolMOS C7 series combines the experience of the leading SJMOSFET supplier with high class innovation.The 600V C7 is the first technology eve

IPA60R180C7MOSFETPG-TO 220 FP600V CoolMOS C7 Power DeviceCoolMOS C7 is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.600V CoolMOS C7 series combines the experience of the leading SJMOSFET supplier with high class innovation.The 600V C7 is the first technology ever w

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPA65R225C7Data SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPA65R225C7TO-220 FP1 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andp

SIGC78T65R3E IGBT3 Chip Features: Recommended for: 650V Trench & Field Stop technology power modules low VCE(sat) C low turn-off losses Applications: short tail current drives positive temperature coefficient easy parallelingGE Qualified according to JEDEC for target applications Chip Type VCE ICn1 ) Die Size PackageSIGC78T65R3E

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7600V CoolMOS C7 Power TransistorIPW60R060C7Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS C7 Power TransistorIPW60R060C7TO-2471 DescriptionCoolMOS C7 is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andp

IPA60R060C7MOSFETPG-TO 220 FP600V CoolMOS C7 Power DeviceCoolMOS C7 is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.600V CoolMOS C7 series combines the experience of the leading SJMOSFET supplier with high class innovation.The 600V C7 is the first technology ever w

IXFC 74N20P VDSS = 200 VPolarHTTM HiPerFETID25 = 35 APower MOSFETRDS(on) = 36 mISOPLUS220TMtrr 200 ns(Electrically Isolated Back Surface)N-Channel Enhancement ModeFast Recovery Diode, AvalancheRatedISOPLUS 220TME153432Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C 200 VVDGR TJ = 25C to 175C; RGS = 1 M

MCAC75N02Electrical Characteristics @ 25C (Unless Otherwise Specified)Parameter Symbol Test Conditions Min Typ Max UnitStatic CharacteristicsV(BR)DSS VGS=0V, ID=250ADrain-Source Breakdown Voltage 20 VIGSS VDS=0V, VGS =10VGate-Source Leakage Current 100 nAIDSS VDS=16V, VGS=0VZero Gate Voltage Drain Current 1 AVGS(th) VDS=VGS, ID=250AGate-Threshold Voltage 0.3

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

NDC7003P Dual P-Channel PowerTrench MOSFET General Description Features These dual P-Channel Enhancement Mode Power Field 0.34A, 60 V. RDS(ON) = 5 @ VGS = 10 VEffect Transistors are produced using ON RDS(ON) = 7 @ VGS = 4.5 V Semiconductors proprietary Trench Technology. This very high density process has been designed Low gate

FDMC7570SMOSFET N-Channel,POWERTRENCH),SyncFETt25 V, 40 A, 2 mWwww.onsemi.comGeneral DescriptionThe FDMC7570S has been designed to minimize losses in powerPin 1conversion application. Advancements in both silicon and packagetechnologies have been combined to offer the lowest RDS(on) whilemaintaining excellent switching performance. This device has theadded benefit of

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and oth

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and oth

DSC7003Silicon NPN epitaxial planar typeFor low frequency amplificationUnit: mmComplementary to DSA7003 Features Low collector-emitter saturation voltage VCE(sat) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: 5A PackagingDSC70030L Embossed type (Thermo-compression sealing): 1 000 pcs / reel (standard) Abs

DSC7101Silicon NPN epitaxial planar typeFor low frequency amplificationUnit: mmComplementary to DSA7101 Features Low collector-emitter saturation voltage VCE(sat) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: 5C PackagingDSC71010L Embossed type (Thermo-compression sealing): 1 000 pcs / reel (standard) Abs

DSC7102Silicon NPN epitaxial planar typeFor low frequency amplificationUnit: mmComplementary to DSA7102 Features Low collector-emitter saturation voltage VCE(sat) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: 5D PackagingDSC71020L Embossed type (Thermo-compression sealing): 1 000 pcs / reel (standard) Abs

DSC7505NPNUnit: mm VCE(sat) (EU RoHS / UL-94 V-0 / MSL: Level 1 ) : 5G DSC75050L () : 1 000/(

This product complies with the RoHS Directive (EU 2002/95/EC).DSC7004Silicon NPN epitaxial planar typeFor low frequency output amplificationComplementary to DSA7004DSC8004 in MiniP3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. MiniP3-F2-B Eco-fr

DSC7Q01Silicon NPN epitaxial planar type darlingtonFor low frequency amplificationUnit: mmDarlington connection Features High forward current transfer ratio hFE with excellent linearity Low collector-emitter saturation voltage VCE(sat) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: 5K PackagingDSC7Q010L Em

TC7320Six Pair, N- and P-ChannelEnhancement-Mode MOSFETFeatures General DescriptionThe Supertex TC7320 consists of a six pairs of high voltage, low Six N- and P-channel MOSFET pairsthreshold, N- and P-channel MOSFETs in a 32-lead LQFP package. Integrated gate-to-source resistorAll of the MOSFETs have integrated gate-to-source resistors and Integrated gate-to-source

STC722DNPN Silicon TransistorDescription PIN Connection General purpose amplifier Surface mount applications Features PC(Collector dissipation)=15W Low speed switching applications Complementary pair with STA723D TO-252 Ordering Information Type NO. Marking Package Code STC722D STC722 TO-252 Absolute maximum ratings (Ta=25C) Character

PRELIMINARY PRELIMINARY RT3C77M NoticeThis is not a final specification Some parametric are subject to change. Composite Transistor For General Purpose High Current Drive ApplicationSilicon NPN Epitaxial TypeDESCRIPTION OUTLINE DRAWING Unitmm RT3C77M is compound transistor built with two 2.1 1.25 2SC6046 chips in SC-88 package. FEATURE High collector

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB56-8L-D Plastic-Encapsulate MOSFETS CJAC70N03 N-Channel Power MOSFET V(BR)DSS ID RDS(on)TYPPDFN 56-8L-D 4.3m@10V30 V70A6.0m@4.5VDESCRIPTION The CJAC70N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURE

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 56-8L-D Plastic-EncapsulateMOSFETS CJAC75SN10 N-Channel Power MOSFETV(BR)DSS RDS(on)TYP ID PDFN 56-8L 8.0m@10V100V 75A10.5m@4.5VDESCRIPTION The CJAC75SN10 uses SGT technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications . FEATURES High

JMnic Product SpecificationSilicon NPN Power Transistors 2SC789 DESCRIPTION With TO-220C package Low collector saturation voltage APPLICATIONS For medium power linear and switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Col

JMnic Product Specification Silicon NPN Power Transistors 2SC792 DESCRIPTION With TO-3 package High breakdown voltage APPLICATIONS For voltage regulator,inverter,switching mode power supply applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL PARAMETER CON

SEMICONDUCTOR KMC7D0CN20CATECHNICAL DATA Common N-Ch Trench MOSFETGeneral DescriptionSwitching regulator and DC-DC Converter applications.CIts mainly suitable for Li-ion battery pack.D8 5AE1EFEATURES BA1VDSS=20V, ID=7A.1 4Low Drain to Source On Resistance.: RDS(ON)=20.5m (Max.) @ VGS=4.5VDIM MILLIMETERS: RDS(ON)=21.0m (Max.) @ VGS=4.0VA 1.2 MAXA1 0.1

SEMICONDUCTOR KMC7D0CN20CTECHNICAL DATA Dual N-Ch Trench MOSFETGeneral DescriptionSwitching regulator and DC-DC Converter applications.CIt s mainly suitable for Li-ion battery pack.D8 5AE1EFEATURES BA1VDSS=20V, ID=7A.1 4Low Drain-Source ON Resistance.: RDS(ON)=20m (Max.) @ VGS=4.0VDIM MILLIMETERS: RDS(ON)=28m (Max.) @ VGS=2.5VA 1.2 MAX_A1 +0.10 0.05

Spec. No. : C886N3 Issued Date : 2012.11.14 CYStech Electronics Corp.Revised Date : Page No. : 1/9 100V N-Channel Logic Level Enhancement Mode MOSFET BVDSS 100VMTBC7N10N3 ID 1ARDSON(TYP)@VGS=10V, ID=1A 389m RDSON(TYP)@VGS=4.5V, ID=1A 413m RDSON(TYP)@VGS=4V, ID=1A 407m Features Lower gate charge. ESD protected. Pb-free lead plating and Halogen-fre

2SC752TM(BR3DG752TMK) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High transition frequency, low saturation voltage, high speed switching time. / Applications Ultra high speed switchi

NPN R 3DD13005 C7D 3DD13005 C7D NPN VCEO 400 V IC 4 A Ptot TC=25 50 W

NPN R 3DD13005 C7D 3DD13005 C7D NPN VCEO 400 V IC 4 A Ptot TC=25 50 W

FHC70 PNP B C D E F G PCM Tc=25 70 W ICM 10 A Tjm 175 Tstg -55~150 V(BR)CBO ICB=2mA 50 100 150 200 250 300 V V(BR)CEO ICE=2mA 50 100 150 200 250 300 V ICBO VCB=20V 2.0 mA ICEO VCE=20V 2.0 mA VBEsat 2.5 V

DTC701 ~ 711 SEMICONDUCTORTECHNICAL DATA DTC714 / 717 / 722Bias Resistor TransistorsNPN Silicon Surface Mount TransistorsWith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias Resistor3Transistor) contains a single transistor with a monolithic bias networkconsisti

SEMICONDUCTORFTC4083TECHNICAL DATAHigh-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz)Features1) High transition frequency. (Typ. fT= 3.2GHz)32) Small rbb*Cc and high gain. (Typ. 4ps)3) Small NF.12SC-70 Device Marking Shipping3000/Tape&Reel3FTC4083 4NCOLLECTORFTC4083 4N 10000/Tape&Reel1BASE2EMITTERoAbsolute maximum ratings (Ta=25 C)Symbol L

DGC75F120M2 75A 1200V Trenchstop Insulated Gate Bipolar Transistor 1 Description Using DongHai's proprietary Trench design and advance FS technology, the 1200V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation 2 Features FS Trench Technology, Positive temperature coefficient Low saturation voltage: V , typ = 2.1V

DGC75F65M75A 650V Trenchstop Insulated Gate Bipolar Transistor1 DescriptionUsing DongHai's proprietary Trench design and advanceFS technology, the 650V FS IGBT offers superior andswitching performances, high avalanche ruggednesseasy parallel operation2 Features FS Trench Technology, Positive temperaturecoefficient Low saturation voltage: VCE(sat), typ = 1.7V@ I =75A

PPJC7406 20V N-Channel Enhancement Mode MOSFET SOT-323 Unit : inch(mm)20 V 1.3A Voltage Current Features RDS(ON) , VGS@4.5V, ID@1.3A

PPJC7403 20V P-Channel Enhancement Mode MOSFET ESD Protected SOT-323 Unit: inch(mm)Voltage -20 V Current -0.7A Features RDS(ON) , VGS@-4.5V, ID@-0.7A

PPJC7404 20V N-Channel Enhancement Mode MOSFET ESD Protected SOT-323 Unit: inch(mm) 20 V 1A Voltage Current Features RDS(ON) , VGS@4.5V, ID@1.0A

PPJC7401 30V P-Channel Enhancement Mode MOSFET SOT-323 Unit : inch(mm)Voltage -30 V Current -1.5A Features RDS(ON) , VGS@-10V, ID@-1.5A

PPJC7400 30V N-Channel Enhancement Mode MOSFET SOT-323 Unit: inch(mm)30 V 1.9A Voltage Current Features RDS(ON) , VGS@10V, ID@1.9A

PPJC7407 20V P-Channel Enhancement Mode MOSFET SOT-323 Unit: inch(mm)Voltage -20 V Current -1.3A Features RDS(ON) , VGS@-4.5V, ID@-1.3A

BLC75N120 Silicon Carbide Power MOSFET 1Description Step-Down Converter BLC75N120 is an N-channel enhancement type planar , MOSFET, with the revolutionary semiconductor material - silicon carbide, which has the advantages of low on-resistance, low capacitance and gate charge, and superior switching performance. The device can provide higher efficiency, faster operation f

JFPC7N90C JFFM7N90C N- MOS / N-CHANNEL POWER MOSFET RoHS FEATURESLOW THERMAL RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMPLIANT APPLICATION: ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER SU

JFPC7N65C JFFC7N65C 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 7A, 650V, RDS(on)typ. = 1.3@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance, a

JFPC7N60C JFFM7N60C 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 7A, 600V, RDS(on)typ. = 1.2@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance, a

JFFC7N65E 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency s

Datasheet900m, 700V, Super Junction N-Channel Power MOSFET SRC70R900General Description SymbolThe Sanrise SRC70R900 is a high voltage powerMOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity and

Datasheet48m, 700V, Super Junction N-Channel Power MOSFET SRC70R048BGeneral Description SymbolThe Sanrise SRC70R048B is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity an

Datasheet 380m, 700V, Super Junction N-Channel Power MOSFET SRC70R380E General Description Symbol The Sanrise SRC70R380E is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

Datasheet 230m, 700V, Super Junction N-Channel Power MOSFET SRC70R230 General Description Symbol The Sanrise SRC70R230 is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power d

Datasheet 7A, 650V, Super Junction N-Channel Power MOSFET SRC7N65General Description Symbol The Sanrise SRC7N65 is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance and fast switching time, making it especially suitable forapplications which require superior power density and outstanding effic

Datasheet 670m, 700V, Super Junction N-Channel Power MOSFET SRC70R670E General Description Symbol The Sanrise SRC70R670E is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

Dec 2013BVDSS = 700 VRDS(on) typ = 1.05 HCD6NC70S ID = 5.0 A700V N-Channel Super Junction MOSFETD-PAKFEATURES 2 Originative New Design1 Superior Avalanche Rugged Technology3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 7 nC (Typ.) Extended Safe Operati

RRUMWUMWUMW NDC7002NUMW NDC7002NSOT23-6 Dual N-Channel Enhancement Mode Field Effect Transistor General Description FeaturesThese dual N-Channel enhancement mode power field0.51A, 50V, RDS(ON) = 2 @ VGS=10Veffect transistors are produced using Fairchild'sHigh density cell design for low RDS(ON).proprietary, high cell density, DMOS technology. Thisvery high density p

NPN R 3DD13005 C7D 3DD13005 C7D NPN VCEO 400 V IC 4 A Ptot TC=25 50 W

LNC7N65D\LND7N65D\LNG7N65D\LNH7N65D\ LNF7N65D Lonten N-channel 650V, 7A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 650V advanced planar VDMOS technology. The ID 7A resulting device has low conduction resistance, RDS(on),max 1.4 superior switching performance and high avalance Qg,typ 20.7nC energy. Features Low RDS(on) Lo

LSC70R380GT/LSD70R380GT/LSE70R380GT/LSF70R380GT/LSG70R380GTLonFETLonten N-channel 700V, 11A, 0.38 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 750VDS j,maxadvanced super junction technology. The resulting R 0.38DS(on),maxdevice has extremely low on resistance, making it I 30ADMespecially suitable for applications which

LNC7N60D\LND7N60D\LNG7N60D\LNH7N60D Lonten N-channel 600V, 7A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 600V advanced planar VDMOS technology. The ID 7A resulting device has low conduction resistance, RDS(on),max 1.3 superior switching performance and high avalance Qg,typ 20.6nC energy. Features Low RDS(on) Low gate cha

LSC70R640GT/LSD70R640GT/LSG70R640GT/ LSH70R640GT/LSF70R640GT LonFET Lonten N-channel 700V, 7A, 0.64 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 750V advanced super junction technology. The resulting RDS(on),max 0.64 device has extremely low on resistance, making it IDM 21A especially suitable for applications whic

LNC7N60\LND7N60 Lonten N-channel 600V, 7A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 600V advanced planar VDMOS technology. The ID 7A resulting device has low conduction resistance, RDS(on),max 1.3 superior switching performance and high avalance Qg,typ 20.6nC energy. Features Low RDS(on) Low gate charge (typ. Qg =20.6nC

SPC7N65G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 700 DS J ID=7A(Vgs=10V) R max. at 25oC () V =10V 1.3 DS(on) GS Ultra Low Gate Charge Q max. (nC) 42 g Improved dv/dt Capability Q (nC) 6 gs 100% Avalanche Tested Q (nC) 12 gd RoHS compliant Configuration single Appl

VBC7P2216www.VBsemi.comP-Channel 20-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs0.012 at VGS = - 4.5 V Available- 9.0RoHS*0.015 at VGS = - 2.5 V -20 - 7.8COMPLIANT0.020 at VGS = - 1.8 V - 6.0S*TSSOP-8 GD D 1 8 * Source Pins 2, 3, 6 and 7 S S must be tied common.2 7 S S 3 6

TPA70R190C,TPC70R190C,TPP70R190C,TPV70R190CWuxi Unigroup Microelectronics Co.,Ltd700V Super-junction Power MOSFETDescription700V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses

TMA7N60H, TMC7N60H, TMD7N60H, TMU7N60H Wuxi Unigroup Microelectronics Company 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TM

TPA70R450C, TPB70R450C, TPC70R450C, TPD70R450C, TPP70R450C, TPU70R450C Wuxi Unigroup Microelectronics Company 700V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package

TPP70R450C, TPA70R450C, TPU70R450C, TPD70R450C, TPC70R450C, TPB70R450C Wuxi Unigroup Microelectronics Company 700V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package

TPP70R950C, TPA70R950C, TPU70R950C, TPD70R950C, TPC70R950C, TPB70R950C Wuxi Unigroup Microelectronics Company 700V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package

SLC700MM10SCN2100V NMOSFET700AAutomotive 100 V N-Channel MOSFET,700A Half-Bridge Power Module.VDSS=100VID nom=700ARDS(ON) typ=0.6m Features Low Rdson High current density High Ruggedness HalfbridgeEasy paralleling App

MPSA70M290,MPSP70M290,MPSC70M290,MPSH70M290FEATURES APPLICATIONS BVDSS=700V, ID=15A Switch Mode Power Supply (SMPS)RDS(on):0.29(Max)@VGS=10V Uninterruptible Power Supply (UPS)Very low FOM RDS(on)Qg Power Factor Correction (PFC) 100% avalanche tested RoHS compliantTO-262TO-220F TO-263TO-220Device Marking and Package InformationOrdering code

MPSC70M360B-700V N-Channel Super Junction MOSFETFeaturesBVDSS=700 V, ID=11.6 ARDS(on) @ :0.36 (Max) VGS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Built-in ESD DiodeTO-263Application Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS)

isc N-Channel MOSFET Transistor IPP60R040C7IIPP60R040C7FEATURESStatic drain-source on-resistance:RDS(on) 0.04Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombine the experience of the leading SJ MOSFET supplierwith high class innovationABSOLU

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA65R125C7FEATURESWith TO-220F packageLow input capacitance and gate chargeReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

isc N-Channel MOSFET Transistor IPP60R099C7IIPP60R099C7FEATURESStatic drain-source on-resistance:RDS(on) 0.099Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombines the benefits of a fast switching SJ MOSFET withexcellent ease of useABSOLUTE M

isc N-Channel MOSFET Transistor IPW65R190C7IIPW65R190C7FEATURESStatic drain-source on-resistance:RDS(on)190mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 650 VDSS

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA65R095C7FEATURESWith TO-220F packageLow input capacitance and gate chargeReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA65R065C7FEATURESWith TO-220F packageLow input capacitance and gate chargeReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

Isc N-Channel MOSFET Transistor IPB65R125C7FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

isc N-Channel MOSFET Transistor IPP60R060C7IIPP60R060C7FEATURESStatic drain-source on-resistance:RDS(on) 0.06Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombine the experience of the leading SJ MOSFET supplierwith high class innovationABSOLU

isc N-Channel MOSFET Transistor IPP65R065C7IIPP65R065C7FEATURESStatic drain-source on-resistance:RDS(on) 0.065Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching super junction MOSFEToffering better efficiency,re

isc N-Channel MOSFET Transistor IPD65R225C7,IIPD65R225C7FEATURESStatic drain-source on-resistance:RDS(on)0.225Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 650 VDSS

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPW60R180C7IIPW60R180C7FEATURESStatic drain-source on-resistance:RDS(on)180mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-So

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPW60R120C7IIPW60R120C7FEATURESStatic drain-source on-resistance:RDS(on)120mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSuitable for hard and soft switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA65R190C7FEATURESWith TO-220F packageLow input capacitance and gate chargeReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

isc N-Channel MOSFET Transistor IPP65R190C7IIPP65R190C7FEATURESStatic drain-source on-resistance:RDS(on) 0.19Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching super junction MOSFEToffering better efficiency,red

isc Silicon NPN Power Transistor 2SC790DESCRIPTIONLow Collector Saturation Voltage-: V = 1.4(V)(Max)@ I = 2ACE(sat) CDC Current Gain-: h = 40-240 @ I = 0.5AFE CComplement to Type 2SA490Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY

isc N-Channel MOSFET Transistor IPP60R180C7IIPP60R180C7FEATURESStatic drain-source on-resistance:RDS(on) 0.18Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombines the experience of the leading SJ MOSFET supplierwith high class innovationABSOL

Isc N-Channel MOSFET Transistor IPB60R099C7FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

isc N-Channel MOSFET Transistor IPP65R225C7IIPP65R225C7FEATURESStatic drain-source on-resistance:RDS(on) 0.225Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching super junction MOSFEToffering better efficiency,re

isc N-Channel MOSFET Transistor IPD65R190C7,IIPD65R190C7FEATURESStatic drain-source on-resistance:RDS(on)0.19Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 650 VDSS

isc Silicon NPN Power Transistor 2SC789DESCRIPTIONLow Collector Saturation Voltage-: V = 1.5(V)(Max)@ I = 3ACE(sat) CDC Current Gain-: h = 40-240 @ I = 0.5AFE CComplement to Type 2SA489Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY

isc N-Channel MOSFET Transistor IPP60R120C7IIPP60R120C7FEATURESStatic drain-source on-resistance:RDS(on) 0.12Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombines the experience of the leading SJ MOSFET supplierwith high class innovationABSOL

isc N-Channel MOSFET Transistor IPP65R045C7IIPP65R045C7FEATURESStatic drain-source on-resistance:RDS(on) 0.045Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching super junction MOSFEToffering better efficiency,re

isc N-Channel MOSFET Transistor IPW65R045C7IIPW65R045C7FEATURESStatic drain-source on-resistance:RDS(on)45mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 650 VDSS

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPW60R040C7IIPW60R040C7FEATURESStatic drain-source on-resistance:RDS(on)40mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSuitable for hard and soft switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER V

isc N-Channel MOSFET Transistor IPD60R180C7IIPD60R180C7FEATURESStatic drain-source on-resistance:RDS(on)0.18Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSuitable for hard and soft switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sou

isc N-Channel MOSFET Transistor IPB65R190C7FEATURESStatic drain-source on-resistance:RDS(on) 0.19Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityImproved transconductanceABSOLUTE MAXIMUM RATING

isc N-Channel MOSFET Transistor IPW65R065C7IIPW65R065C7FEATURESStatic drain-source on-resistance:RDS(on)65mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 650 VDSS

Isc N-Channel MOSFET Transistor IPB60R060C7FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R120C7FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

Isc N-Channel MOSFET Transistor IPB65R045C7FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

Isc N-Channel MOSFET Transistor IPB60R180C7FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

isc N-Channel MOSFET Transistor IPW65R095C7IIPW65R095C7FEATURESStatic drain-source on-resistance:RDS(on)95mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 650 VDSS

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPW60R099C7IIPW60R099C7FEATURESStatic drain-source on-resistance:RDS(on)99mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSuitable for hard and soft switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER V

isc N-Channel MOSFET Transistor IPW65R125C7IIPW65R125C7FEATURESStatic drain-source on-resistance:RDS(on)125mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 650 VDSS

Isc N-Channel MOSFET Transistor IPB60R040C7FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

Isc N-Channel MOSFET Transistor IPB65R065C7FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

Isc N-Channel MOSFET Transistor IPB65R095C7FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

isc N-Channel MOSFET Transistor IPP65R095C7IIPP65R095C7FEATURESStatic drain-source on-resistance:RDS(on) 0.095Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching super junction MOSFEToffering better efficiency,re

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA65R045C7FEATURESWith To-220F packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC792DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 300V (Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching and horizontal deflectionoutput applications.ABSOLU

isc N-Channel MOSFET Transistor IPB65R225C7FEATURESStatic drain-source on-resistance:RDS(on) 0.225Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching super junction MOSFEToffering better efficiency,reduced gate char

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R180C7FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA65R225C7FEATURESWith TO-220F packageLow input capacitance and gate chargeReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPW60R060C7IIPW60R060C7FEATURESStatic drain-source on-resistance:RDS(on)60mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSuitable for hard and soft switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER V