NPN R 3DD13009 C8 3DD13009 C8 NPN VCEO 400 V IC 12 A Ptot TC=25 100 W

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MCAC80N045YElectrical Characteristics @ 25C (Unless Otherwise Specified)Parameter Symbol Test Conditions Min Typ Max UnitStatic CharacteristicsV(BR)DSS VGS=0V, ID=250ADrain-Source Breakdown Voltage 45 VIGSS VDS=0V, VGS =20VGate-Source Leakage Current 100 nAVDS=32V, VGS=0V, TJ=25C1IDSSZero Gate Voltage Drain Current AVDS=32V, VGS=0V, TJ=85C30VGS(t

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB56-8L Plastic-Encapsulate MOSFETS CJAC80SN10 N-Channel Power MOSFET PDFN 56-8L ID V(BR)DSS RDS(on)TYP6.2m@10V100 V80A8.8m@4.5VDESCRIPTION The CJAC80SN10 uses shielded gate trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEAT

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 56-8L Plastic-Encapsulate MOSFETS CJAC80N03 N-Channel Power MOSFETID V(BR)DSS RDS(on)TYPPDFN 56-8L 3.0m@10V30 V80A4.3m@4.5VDESCRIPTION The CJAC80N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC80716LT1/DBC807-16LT1General Purpose TransistorsPNP SiliconBC807-25LT1COLLECTOR3BC807-40LT12BASE13EMITTERMAXIMUM RATINGS1Rating Symbol Value Unit2CollectorEmitter Voltage VCEO 45 VCollectorBase Voltage VCBO 50 V CASE 31808, STYLE 6SOT23 (TO236AB)EmitterBase Voltag

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC856AWT1/DGeneral Purpose TransistorsBC856AWT1,BWT1PNP SiliconBC857AWT1,BWT1COLLECTOR BC858AWT1,BWT1,These transistors are designed for general purpose amplifier3applications. They are housed in the SOT323/SC70 which is CWT1designed for low power surface mount applications.1Motorola Preferred DevicesB

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC846AWT1/DGeneral Purpose TransistorsBC846AWT1,BWT1NPN SiliconBC847AWT1,BWT1,COLLECTOR CWT1These transistors are designed for general purpose amplifier3BC848AWT1,BWT1,applications. They are housed in the SOT323/SC70 which isdesigned for low power surface mount applications.CWT11BASE2EMITTERMAX

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC846ALT1/DBC846ALT1,BLT1General Purpose TransistorsBC847ALT1,NPN SiliconCOLLECTORBLT1,CLT1 thru3BC850ALT1,BLT1,1 CLT1BASEBC846, BC847 and BC848 areMotorola Preferred Devices2EMITTERMAXIMUM RATINGSBC847 BC848BC850 BC849Rating Symbol BC846 Unit3CollectorEmitter Voltage VCEO 65 45 30 V1C

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC81716LT1/DBC817-16LT1General Purpose TransistorsNPN SiliconBC817-25LT1COLLECTOR3BC817-40LT12BASE13EMITTERMAXIMUM RATINGS1Rating Symbol Value Unit2CollectorEmitter Voltage VCEO 45 VCollectorBase Voltage VCBO 50 V CASE 31808, STYLE 6SOT23 (TO236AB)EmitterBase Voltage VEBO

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC856ALT1/DBC856ALT1,BLT1General Purpose TransistorsBC857ALT1,PNP SiliconCOLLECTORBLT1,CLT13BC858ALT1,BLT1,CLT11BASEMotorola Preferred Devices2EMITTERMAXIMUM RATINGSRating Symbol BC856 BC857 BC858 Unit3CollectorEmitter Voltage VCEO 65 45 30 V1CollectorBase Voltage VCBO 80

IRGC8B120UBPD -94317IRGC8B120UBIRGC8B120UB IGBT Die in Wafer FormFeatures GEN5 Non Punch Through (NPT) Technology UltraFast1200 VC 10s Short Circuit CapabilityIC(nom) = 8A Square RBSOA Positive VCE(on) Temperature Coefficient VCE(on) typ. = 3.63V @BenefitsIC(nom) @ 25C Benchmark Efficiency above 20KHzUltraFast IGBTG Opt

PD- 91875IRG4CC81KBIRG4CC81KB IGBT Die in Wafer FormC600 VSize 8.1Ultra-Fast SpeedG Short Circuit Rated6" WaferEElectrical Characteristics ( Wafer Form )Parameter Description Guaranteed (Min/Max) Test ConditionsVCE (on) Collector-to-Emitter Saturation Voltage 4.5V Max. IC = 10A, TJ = 25C, VGE = 15VV(BR)CES Colletor-to-Emitter Breakdown Voltage 600V Min. TJ = 25C, I

PD - 94316IRGC8B120KBIRGC8B120KB IGBT Die in Wafer FormFeatures GEN5 Non Punch Through (NPT) Technology Low VCE(on)1200 VC 10s Short Circuit CapabilityIC(nom) = 8A Square RBSOAVCE(on) typ. = 2.32V @ Positive VCE(on) Temperature CoefficientIC(nom) @ 25CBenefitsMotor Control IGBT Benchmark Efficiency for Motor ControlG Rugged Transient

PD- 91773IRG4CC81UBIRG4CC81UB IGBT Die in Wafer FormC600 VSize 8.1Ultra-Fast SpeedG6" WaferEElectrical Characteristics ( Wafer Form )Parameter Description Guaranteed (Min/Max) Test ConditionsVCE (on) Collector-to-Emitter Saturation Voltage 4.5V Max. IC = 10A, TJ = 25C, VGE = 15VV(BR)CES Colletor-to-Emitter Breakdown Voltage 600V Min. TJ = 25C, ICES = 250A, VGE =

PD- 91869IRG4CC88KBIRG4CC88KB IGBT Die in Wafer FormC600 VSize 8.8Ultra-Fast SpeedG Short Circuit Rated6" WaferEElectrical Characteristics ( Wafer Form )Parameter Description Guaranteed (Min/Max) Test ConditionsVCE (on) Collector-to-Emitter Saturation Voltage 4.5V Max. IC = 10A, TJ = 25C, VGE = 15VV(BR)CES Colletor-to-Emitter Breakdown Voltage 600V Min. TJ = 25C, I

DISCRETE SEMICONDUCTORSDATA SHEETandbook, halfpageMBD128BC856SPNP general purpose doubletransistorProduct specification 1999 Aug 24Philips Semiconductors Product specificationPNP general purpose double transistor BC856SFEATURES Two transistors in one package Reduces number of components and board space6 5 4handbook, halfpage No mutual interference between

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D102BC856W; BC857W; BC858WPNP general purpose transistorsProduct data sheet 2002 Feb 04Supersedes data of 1999 Apr 12NXP Semiconductors Product data sheetBC856W; BC857W; PNP general purpose transistorsBC858WFEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 65 V).1 base2 emitter

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088BC807PNP general purpose transistor1999 Apr 08Product specificationSupersedes data of 1997 Feb 28Philips Semiconductors Product specificationPNP general purpose transistor BC807FEATURES PINNING High current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 base2 emitterAPPLICATIONS3 collector

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D109BC869PNP medium power transistor; 20 V, 1 AProduct data sheet 2004 Nov 08Supersedes data of 2003 Dec 02NXP Semiconductors Product data sheetPNP medium power transistor; BC86920 V, 1 AFEATURES QUICK REFERENCE DATA High currentSYMBOL PARAMETER MIN. MAX. UNIT Three current gain selectionsVCEO collector

BC846/BC546 series65 V, 100 mA NPN general-purpose transistorsRev. 07 17 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages.Table 1. Product overviewType number[1] Package PNP complementNXP JEITA JEDECBC846 SOT23 - TO-236AB BC856BC846W SOT323 SC-70 - BC856WBC846T SO

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D302BC807DSPNP general purpose double transistorProduct data sheet 2002 Nov 22Supersedes data of 2002 Aug 09NXP Semiconductors Product data sheetPNP general purpose double transistor BC807DSFEATURES QUICK REFERENCE DATA High current (500 mA)SYMBOL PARAMETER MAX. UNIT 600 mW total power dissipationVCEO colle

DISCRETE SEMICONDUCTORSDATA SHEETM3D425BC856F; BC857F; BC858F seriesPNP general purpose transistors1999 May 21Preliminary specificationSupersedes data of 1998 Nov 10Philips Semiconductors Preliminary specificationPNP general purpose transistors BC856F; BC857F; BC858F seriesFEATURES PINNING Power dissipation comparable to SOT23PIN DESCRIPTION Low current (max. 10

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102BC849W; BC850WNPN general purpose transistors1999 Apr 12Product specificationSupersedes data of 1997 Jun 20Philips Semiconductors Product specificationNPN general purpose transistors BC849W; BC850WFEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 base2 emitterAPPLICATI

BC856S65 V, 100 mA PNP/PNP general-purpose transistorRev. 02 19 February 2009 Product data sheet1. Product profile1.1 General descriptionPNP/PNP general-purpose transistor pair in a very small SOT363 (SC-88)Surface-Mounted Device (SMD) plastic package.1.2 Features Low collector capacitance Low collector-emitter saturation voltage Closely matched current gain Reduces nu

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088BC817NPN general purpose transistor1999 Jun 01Product specificationSupersedes data of 1997 Mar 12Philips Semiconductors Product specificationNPN general purpose transistor BC817FEATURES PINNING High current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 base2 emitterAPPLICATIONS3 collector

DISCRETE SEMICONDUCTORSDATA SHEETM3D173BC856T; BC857T seriesPNP general purpose transistorsProduct specification 2000 Nov 15Supersedes data of 1999 Apr 26Philips Semiconductors Product specificationPNP general purpose transistors BC856T; BC857T seriesFEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 65 V).1 base2 emitterAPPLICATIONS

BC848 series30 V, 100 mA NPN general-purpose transistorsRev. 07 17 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages.Table 1. Product overviewType number Package PNP complementNXP JEITA JEDECBC848B SOT23 - TO-236AB BC858BBC848W SOT323 SC-70 - BC858W1.2 Features G

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D302BC817DPNNPN/PNP general purpose transistorProduct data sheet 2002 Nov 22Supersedes data of 2002 Aug 09NXP Semiconductors Product data sheetNPN/PNP general purpose transistor BC817DPNFEATURES QUICK REFERENCE DATA High current (500 mA)SYMBOL PARAMETER MAX. UNIT 600 mW total power dissipationVCEO collector

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102BC817WNPN general purpose transistor1999 Apr 15Product specificationSupersedes data of 1997 Mar 05Philips Semiconductors Product specificationNPN general purpose transistor BC817WFEATURES PINNING High current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 base2 emitterAPPLICATIONS3 collector

DISCRETE SEMICONDUCTORS DATA SHEEThandbook, halfpageMBD128BC846SNPN general purpose double transistorProduct data sheet 1999 Sep 01Supersedes data of 1999 May 28NXP Semiconductors Product data sheetNPN general purpose double transistor BC846SFEATURES Two transistors in one package Reduces number of components and board space6 5 4handbook, halfpage6 5 4

BC846DS65 V, 100 mA NPN/NPN general-purpose transistorRev. 01 17 July 2009 Product data sheet1. Product profile1.1 General descriptionNPN/NPN general-purpose transistor pair in a small SOT457 (SC-74) Surface-MountedDevice (SMD) plastic package.1.2 Features Low collector capacitance Low collector-emitter saturation voltage Closely matched current gain Reduces number of

DISCRETE SEMICONDUCTORS DATA SHEETM3D744BC847BVNPN general purpose double transistorProduct data sheet 2001 Sep 10NXP Semiconductors Product data sheetNPN general purpose double transistor BC847BVFEATURES PINNING 300 mW total power dissipationPIN DESCRIPTION Very small 1.6 mm 1.2 mm 0.55 mm ultra thin 1, 4 emitter TR1; TR2package2, 5 base TR1; TR2

DISCRETE SEMICONDUCTORSDATA SHEETandbook, halfpageMBD128BC846SNPN general purpose doubletransistorProduct specification 1999 Sep 01Supersedes data of 1999 May 28Philips Semiconductors Product specificationNPN general purpose double transistor BC846SFEATURES Two transistors in one package Reduces number of components and board space6 5 4handbook, halfpage6

DISCRETE SEMICONDUCTORSDATA SHEEThandbook, halfpageM3D187BC856W; BC857WPNP general purpose transistors1999 Apr 12Product specificationSupersedes data of 1997 Apr 07Philips Semiconductors Product specificationPNP general purpose transistors BC856W; BC857WFEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 80)1 base S-mini package.

DISCRETE SEMICONDUCTORSDATA SHEETandbook, halfpageMBD128BC847BPNNPN/PNP general purposetransistor1999 Apr 26Preliminary specificationSupersedes data of 1997 Jul 09Philips Semiconductors Preliminary specificationNPN/PNP general purpose transistor BC847BPNFEATURES PINNING Low collector capacitancePIN DESCRIPTION Low collector-emitter saturation voltage1, 4 e

DISCRETE SEMICONDUCTORSDATA SHEETandbook, halfpageMBD128BC847BSNPN general purpose doubletransistor1999 Apr 28Product specificationSupersedes the data of 1997 Jul 14Philips Semiconductors Product specificationNPN general purpose double transistor BC847BSFEATURES PINNING Low collector capacitancePIN DESCRIPTION Low collector-emitter saturation voltage1, 4 e

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088BC859; BC860PNP general purpose transistors1999 May 28Product specificationSupersedes data of 1998 Jul 16Philips Semiconductors Product specificationPNP general purpose transistors BC859; BC860FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 base2 emitterAPPLICATIONS

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D109BC869PNP medium power transistor1999 Apr 08Product specificationSupersedes data of 1998 Jul 16Philips Semiconductors Product specificationPNP medium power transistor BC869FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 20 V).1 emitter2 collectorAPPLICATIONS3 base Low vo

DISCRETE SEMICONDUCTORS DATA SHEETBC856; BC857; BC858PNP general purpose transistorsProduct data sheet 2004 Jan 16Supersedes data of 2003 Apr 09NXP Semiconductors Product data sheetPNP general purpose transistors BC856; BC857; BC858FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 65 V).1 base2 emitterAPPLICATIONS3 collector G

DISCRETE SEMICONDUCTORS DATA SHEETM3D744BC847BVNNPN/PNP general purpose transistorProduct data sheet 2001 Nov 07Supersedes data of 2001 Aug 30NXP Semiconductors Product data sheetNPN/PNP general purpose transistor BC847BVNFEATURES PINNING 300 mW total power dissipationPIN DESCRIPTION Very small 1.6 mm x 1.2 mm ultra thin package1, 4 emitter TR1; TR2 Exce

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D187BC859W; BC860WPNP general purpose transistors1999 Apr 12Product specificationSupersedes data of 1997 Sep 03Philips Semiconductors Product specificationPNP general purpose transistors BC859W; BC860WFEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 base2 emitterAPPLICATI

DISCRETE SEMICONDUCTORS DATA SHEETBC859; BC860PNP general purpose transistorsProduct data sheet 2004 Jan 16Supersedes data of 1999 May 28 NXP Semiconductors Product data sheetPNP general purpose transistors BC859; BC860FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 base2 emitterAPPLICATIONS3 collector Low noise inpu

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BC875; BC879NPN Darlington transistors1999 May 28Product specificationSupersedes data of 1997 Apr 22Philips Semiconductors Product specificationNPN Darlington transistors BC875; BC879FEATURES PINNING High DC current gain (min. 1000)PIN DESCRIPTION High current (max. 1 A)1 base Low voltage (max. 80 V)

DISCRETE SEMICONDUCTORSDATA SHEETM3D173BC846T; BC847T seriesNPN general purpose transistorsProduct specification 2000 Nov 15Supersedes data of 1999 Apr 26Philips Semiconductors Product specificationNPN general purpose transistors BC846T; BC847T seriesFEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 65 V).1 base2 emitterAPPLICATIONS

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D109BC868NPN medium power transistor; 20 V, 1 AProduct data sheet 2004 Nov 08Supersedes data of 2003 Dec 02NXP Semiconductors Product data sheetNPN medium power transistor; BC86820 V, 1 AFEATURES QUICK REFERENCE DATA High currentSYMBOL PARAMETER MIN. MAX. UNIT Two current gain selectionsVCEO collector-e

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088BC846; BC847NPN general purpose transistors1999 Apr 23Product specificationSupersedes data of 1997 Mar 12Philips Semiconductors Product specificationNPN general purpose transistors BC846; BC847FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 65 V).1 base2 emitterAPPLICATIONS

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D302BC817DSNPN general purpose double transistorProduct data sheet 2002 Nov 22Supersedes data of 2002 Aug 09NXP Semiconductors Product data sheetNPN general purpose double transistor BC817DSFEATURES QUICK REFERENCE DATA High current (500 mA)SYMBOL PARAMETER MAX. UNIT 600 mW total power dissipationVCEO colle

DISCRETE SEMICONDUCTORS DATA SHEETM3D744BC857BVPNP general purpose double transistorProduct data sheet 2001 Nov 07Supersedes data of 2001 Aug 10NXP Semiconductors Product data sheetPNP general purpose double transistor BC857BVFEATURES PINNING 300 mW total power dissipationPIN DESCRIPTION Very small 1.6 mm 1.2 mm 0.55 mm ultra thin 1, 4 emitter TR1; TR2

BC807; BC807W; BC32745 V, 500 mA PNP general-purpose transistorsRev. 06 17 November 2009 Product data sheet1. Product profile1.1 General descriptionPNP general-purpose transistors.Table 1. Product overviewType number Package NPN complementNXP JEITABC807 SOT23 - BC817BC807W SOT323 SC-70 BC817WBC327[1] SOT54 (TO-92) SC-43A BC337[1] Also available in SOT54A and SOT54 va

DISCRETE SEMICONDUCTORS DATA SHEETM3D883BOTTOM VIEWBC857M seriesPNP general purpose transistorsProduct data sheet 2004 Mar 10Supersedes data of 2003 Jul 15NXP Semiconductors Product data sheetPNP general purpose transistors BC857M seriesFEATURES QUICK REFERENCE DATA Leadless ultra small plastic package SYMBOL PARAMETER MAX. UNIT(1 mm 0.6 mm 0.5 mm)VCEO col

BC856BS65 V, 100 mA PNP/PNP general-purpose transistorRev. 01 11 August 2009 Product data sheet1. Product profile1.1 General descriptionPNP/PNP general-purpose transistor pair in a very small Surface-Mounted Device (SMD)plastic package.Table 1. Product overviewType number Package NPN/NPN NPN/PNPcomplement complementNXP JEITABC856BS SOT363 SC-88 BC846BS BC846BPN1.2 Fe

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D187BC859W; BC860WPNP general purpose transistorsProduct data sheet 1999 Apr 12Supersedes data of 1997 Sep 03 NXP Semiconductors Product data sheetPNP general purpose transistors BC859W; BC860WFEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 base2 emitterAPPLICATIONS3

DISCRETE SEMICONDUCTORS DATA SHEEThandbook, halfpageMBD128BC857BSPNP general purpose double transistorProduct data sheet 1999 Apr 26Supersedes data of 1997 Jul 09 NXP Semiconductors Product data sheetPNP general purpose double transistor BC857BSFEATURES PINNING Low collector capacitancePIN DESCRIPTION Low collector-emitter saturation voltage1, 4 emitter TR1

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088BC856; BC857PNP general purpose transistors1999 Apr 12Product specificationSupersedes data of 1997 Apr 17Philips Semiconductors Product specificationPNP general purpose transistors BC856; BC857FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 65 V).1 base2 emitterAPPLICATIONS

BC817; BC817W; BC33745 V, 500 mA NPN general-purpose transistorsRev. 06 17 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN general-purpose transistors.Table 1. Product overviewType number Package PNP complementNXP JEITABC817 SOT23 - BC807BC817W SOT323 SC-70 BC807WBC337[1] SOT54 (TO-92) SC-43A BC327[1] Also available in SOT54A and SOT54 va

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D187BC807WPNP general purpose transistor1999 May 18Product specificationSupersedes data of 1997 Jun 09Philips Semiconductors Product specificationPNP general purpose transistor BC807WFEATURES PINNING High current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 base2 emitterAPPLICATIONS3 collector

BC846BPN65 V, 100 mA NPN/PNP general-purpose transistorRev. 01 17 July 2009 Product data sheet1. Product profile1.1 General descriptionNPN/PNP general-purpose transistor pair in a very small Surface-Mounted Device (SMD)plastic package.Table 1. Product overviewType number Package NPN/NPN PNP/PNPcomplement complementNXP JEITABC846BPN SOT363 SC-88 BC846BS BC856BS1.2 Fea

DISCRETE SEMICONDUCTORSDATA SHEETM3D425BC846F; BC847F; BC848F seriesNPN general purpose transistors1999 May 18Preliminary specificationSupersedes data of 1998 Nov 10Philips Semiconductors Preliminary specificationNPN general purpose transistors BC846F; BC847F; BC848F seriesFEATURES PINNING Power dissipation comparable to SOT23PIN DESCRIPTION Low current (max. 10

DISCRETE SEMICONDUCTORS DATA SHEETM3D173BC856T; BC857T seriesPNP general purpose transistorsProduct data sheet 2000 Nov 15Supersedes data of 1999 Apr 26NXP Semiconductors Product data sheetBC856T; BC857T PNP general purpose transistorsseriesFEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 65 V).1 base2 emitterAPPLICATIONS3 c

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D102BC849W; BC850WNPN general purpose transistorsProduct data sheet 1999 Apr 12Supersedes data of 1997 Jun 20 NXP Semiconductors Product data sheetNPN general purpose transistors BC849W; BC850WFEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 base2 emitterAPPLICATIONS3

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D109BC868NPN medium power transistor1999 Apr 08Product specificationSupersedes data of 1998 Jul 16Philips Semiconductors Product specificationNPN medium power transistor BC868FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 20 V).1 emitter2 collectorAPPLICATIONS3 base Genera

DISCRETE SEMICONDUCTORS DATA SHEETBC849; BC850NPN general purpose transistorsProduct data sheet 2004 Jan 16Supersedes data of 1999 Apr 08 NXP Semiconductors Product data sheetNPN general purpose transistors BC849; BC850FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 base2 emitterAPPLICATIONS3 collector General purpos

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102BC846W; BC847WNPN general purpose transistors1999 Apr 23Product specificationSupersedes data of 1997 Mar 27Philips Semiconductors Product specificationNPN general purpose transistors BC846W; BC847WFEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 65 V).1 base2 emitterAPPLICATI

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088BC849; BC850NPN general purpose transistors1999 Apr 08Product specificationSupersedes data of 1998 Aug 06Philips Semiconductors Product specificationNPN general purpose transistors BC849; BC850FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 base2 emitterAPPLICATIONS

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BC878PNP Darlington transistor1999 May 31Product specificationSupersedes data of 1997 Apr 22Philips Semiconductors Product specificationPNP Darlington transistor BC878FEATURES PINNING High DC current gain (min. 1000)PIN DESCRIPTION High current (max. 1 A)1 base Low voltage (max. 80 V)2 collector

BC847/BC547 series45 V, 100 mA NPN general-purpose transistorsRev. 07 10 December 2008 Product data sheet1. Product profile1.1 General descriptionNPN general-purpose transistors in small plastic packages.Table 1. Product overviewType number[1] Package PNP complementNXP JEITA JEDECBC847 SOT23 - TO-236AB BC857BC847A BC857ABC847B BC857BBC847B/DG -BC847C BC857CBC847W

BC847BPN45 V, 100 mA NPN/PNP general-purpose transistorRev. 04 18 February 2009 Product data sheet1. Product profile1.1 General descriptionNPN/PNP general-purpose transistor pair in a very small SOT363 (SC-88)Surface-Mounted Device (SMD) plastic package.1.2 Features Low collector capacitance Low collector-emitter saturation voltage Closely matched current gain Reduces

DISCRETE SEMICONDUCTORSDATA SHEEThandbook, halfpageMBD128BC857BSPNP general purpose doubletransistor1999 Apr 26Product specificationSupersedes data of 1997 Jul 09Philips Semiconductors Product specificationPNP general purpose double transistor BC857BSFEATURES PINNING Low collector capacitancePIN DESCRIPTION Low collector-emitter saturation voltage1, 4 emit

MSC83305RF & MICROWAVE TRANSISTORSGENERAL PURPOSE AMPLIFIER APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER BALLASTED.VSWR CAPABILITY :1 @ RATEDCONDITIONS.HERMETIC STRIPAC PACKAGE.P 4.5 W MIN. WITH 4.5 dB GAINOUT =@ 3.0 GHz.250 2LFL (S010)hermetically sealedORDER CODE BRANDINGMSC83305 83305PIN CONNECTIONDESCRIPTIONThe MSC83305 is a common base hermet

MSC81111RF & MICROWAVE TRANSISTORSGENERAL PURPOSE AMPLIFIER APPLICATIONS.EMITTER BALLASTED.REFRACTORY/GOLD METALLIZATION.VSWR CAPABILITY @ RATED:1CONDITIONS.HERMETIC STRIPAC PACKAGE.POUT 5.0 W MIN. WITH 10 dB GAIN @=1 GHz.250 2LFL (S010)hermetically sealedORDER CODE BRANDINGMSC81111 81111PIN CONNECTIONDESCRIPTIONThe MSC81111 is a common base hermeticall

MSC81010RF & MICROWAVE TRANSISTORSGENERAL PURPOSE AMPLIFIER APPLICATIONS.EMITTER BALLASTED.VSWR CAPABILITY :1 @ RATEDCONDITIONS.HERMETIC STRIPAC PACKAGE.P 10 W MIN. WITH 10 dB GAINOUT =@ 1 GHz.230 2L STUD (S016)hermetically sealedORDER CODE BRANDINGMSC81010 81010PIN CONNECTIONDESCRIPTIONThe MSC81010 is a common base hermeticallysealed silicon NPN microw

BC857BSMALL SIGNAL PNP TRANSISTORPRELIMINARY DATAType MarkingBC857B 3F SILICON EPITAXIAL PLANAR PNPTRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGEFOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE ISBC847BAPPLICATIONS SOT-23 WELL SUITABLE FOR PORTABLEEQUIPMENT SMALL LOAD SWITCH TRANSISTOR WITHHIGH GAIN AND LOW SATURATIONVOLTAGEIN

STP6NC80Z - STP6NC80ZFPSTB6NC80Z - STB6NC80Z-1N-CHANNEL 800V - 1.5 - 5.4A TO-220/FP/DPAK/IPAKZener-Protected PowerMESHIII MOSFETTYPE VDSS RDS(on) IDSTP6NC80Z/FP 800V

BC817-25BC817-40SMALL SIGNAL NPN TRANSISTORSPRELIMINARY DATAType MarkingBC817-25 6BBC817-40 6C SILICON EPITAXIAL PLANAR NPNTRANSISTORS MINIATURE SOT-23 PLASTIC PACKAGEFOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE PNP COMPLEMENTARY TYPES AREBC807-25 AND BC817-40 RESPECTIVELYSOT-23APPLICATIONS WELL SUITABLE FOR PORTABLEEQUIPMENT SMALL LOAD SWITCH

MSC82304RF & MICROWAVE TRANSISTORSGENERAL PURPOSE AMPLIFIER APPLICATIONSPRELIMINARY DATA.REFRACTORY/GOLD METALLIZATION.VSWR CAPABILITY 20:1 @ RATEDCONDITIONS.HERMETIC STRIPAC PACKAGE.P 3.8 W MIN. WITH 10.0 dB GAINOUT =.250 2LFL (S010)hermetically sealedORDER CODE BRANDINGMSC82304 82304PIN CONNECTIONDESCRIPTIONThe MSC82304 is a common base hermeticallysealed

MSC80186RF & MICROWAVE TRANSISTORSGENERAL PURPOSE LINEAR APPLICATIONS.EMITTER BALLASTED.CLASS A LINEAR OPERATION.COMMON EMITTER.VSWR CAPABILITY 15:1 @ RATEDCONDITIONS.ft 3.2 GHz TYPICAL.NOISE FIGURE 12.5 dB @ 2 GHz.230 4L STUD (S027).P 30.0 dBm MIN.=OUT hermetically sealedORDER CODE BRANDINGMSC80186 80186PIN CONNECTIONDESCRIPTIONThe MSC80185 is a hermetically

STP4NC80Z - STP4NC80ZFPSTB4NC80Z - STB4NC80Z-1N-CHANNEL 800V - 2.4 - 4A TO-220/FP/D2PAK/I2PAKZener-Protected PowerMESHIII MOSFETTYPE VDSS RDS(on) IDSTP4NC80Z/FP 800V

MSC82003RF & MICROWAVE TRANSISTORSGENERAL PURPOSE AMPLIFIER APPLICATIONS.EMITTER BALLASTED.VSWR CAPABILITY :1 @ RATEDCONDITIONS.REFRACTORY/GOLD METALLIZATION.HERMETIC STRIPAC PACKAGE.POUT 3.0 W MIN. WITH 7.8 dB GAIN=@ 2.0 GHz.250 2LFL (S010)hermetically sealedORDER CODE BRANDINGMSC82003 82003PIN CONNECTIONDESCRIPTIONThe MSC82003 is a common base hermeti

MSC82302RF & MICROWAVE TRANSISTORSGENERAL PURPOSE AMPLIFIER APPLICATIONSPRELIMINARY DATA.REFRACTORY/GOLD METALLIZATION.VSWR CAPABILITY 20:1 @ RATEDCONDITIONS.HERMETIC STRIPAC PACKAGE.P 1.8 W MIN. WITH 10.0 dB GAINOUT =.250 2LFL (S010)hermetically sealedORDER CODE BRANDINGMSC82302 82302PIN CONNECTIONDESCRIPTIONThe MSC82302 is a common base hermeticallysealed

BC847SMALL SIGNAL NPN TRANSISTORSType MarkingBC847B 1F SILICON EPITAXIAL PLANAR NPNTRANSISTORS MINIATURE PLASTIC PACKAGE FORAPPLICATION IN SURFACE MOUNTING2CIRCUITS LOW LEVEL GENERAL PURPOSE3 PNP COMPLEMENT IS BC8571SOT-23INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Collector-Emitter Voltage (V = 0) 50 VCES BEV Collector-

MSC81002RF & MICROWAVE TRANSISTORSGENERAL PURPOSE AMPLIFIER APPLICATIONS.EMITTER BALLASTED.VSWR CAPABILITY :1 @ RATEDCONDITIONS.HERMETIC STRIPAC PACKAGE.P 2.0 W MIN. WITH 10 dB GAIN @OUT =1 GHz.230 2L STUD (S016)hermetically sealedORDER CODE BRANDINGMSC81002 81002PIN CONNECTIONDESCRIPTIONThe MSC81002 is a common base hermeticallysealed silicon NPN micro

MSC81020RF & MICROWAVE TRANSISTORSGENERAL PURPOSE AMPLIFIER APPLICATIONS.EMITTER BALLASTED.REFRACTORY/GOLD METALLIZATION.LOW THERMAL RESISTANCE.HERMETIC STRIPAC PACKAGE.P 20 W MIN. WITH 10 dB GAINOUT =@ 1 GHz.230 2L STUD (S016)hermetically sealedORDER CODE BRANDINGMSC81020 81020PIN CONNECTIONDESCRIPTIONThe MSC81020 is a common base hermeticallysealed silicon

MSC81005RF & MICROWAVE TRANSISTORSGENERAL PURPOSE AMPLIFIER APPLICATIONS.EMITTER BALLASTED.REFRACTORY/GOLD METALLIZATION.VSWR CAPABILITY @ RATED:1CONDITIONS.HERMETIC STRIPAC PACKAGE.POUT 5.0 W MIN. WITH 10 dB GAIN=@ 1 GHz.230 2L STUD (S016)hermetically sealedORDER CODE BRANDINGMSC81005 81005PIN CONNECTIONDESCRIPTIONThe MSC81005 is a common base hermetic

MSC82001RF & MICROWAVE TRANSISTORSGENERAL PURPOSE AMPLIFIER APPLICATIONS.EMITTER BALLASTED.REFRACTORY/GOLD METALLIZATION.VSWR CAPABILITY @ RATED:1CONDITIONS.HERMETIC STRIPAC PACKAGE.POUT 1.0 W MIN. WITH 7.0 dB GAIN=@ 2.0 GHz.250 2LFL (S010)hermetically sealedORDER CODE BRANDINGMSC82001 82001PIN CONNECTIONDESCRIPTIONThe MSC82001 is a common base hermetic

STW7NC80ZN-CHANNEL 800V - 1.5 - 6A TO-247Zener-Protected PowerMESHIII MOSFETTYPE VDSS RDS(on) IDSTW7NC80Z 800 V

MSC82010RF & MICROWAVE TRANSISTORSGENERAL PURPOSE AMPLIFIER APPLICATIONS.EMITTER BALLASTED.VSWR CAPABILITY :1 @ RATEDCONDITIONS.HERMETIC STRIPAC PACKAGE.P 10 W MIN. WITH 5.2 dB GAIN @OUT =2.0 GHz.250 2LFL (S010)hermetically sealedORDER CODE BRANDINGMSC82010 82010PIN CONNECTIONDESCRIPTIONThe MSC82010 is a common base hermeticallysealed silicon NPN microw

MSC80196RF & MICROWAVE TRANSISTORSGENERAL PURPOSE LINEAR APPLICATIONS.EMITTER BALLASTED.CLASS A LINEAR OPERATION.COMMON EMITTER.VSWR CAPABILITY 15:1 @ RATEDCONDITIONS.ft 3.2 GHz TYPICAL.NOISE FIGURE 12.5 dB @ 2 GHz.250 2LFL (S011).P 30.0 dBm MIN.=OUT hermetically sealedORDER CODE BRANDINGMSC80196 80196PIN CONNECTIONDESCRIPTIONThe MSC80196 is a hermetically se

BC857BWSMALL SIGNAL PNP TRANSISTORPRELIMINARY DATAType MarkingBC857BW 3FW SILICON EPITAXIAL PLANAR PNPTRANSISTOR MINIATURE SOT-323 PLASTIC PACKAGEFOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE ISBC847BWAPPLICATIONS SOT-323 WELL SUITABLE FOR PORTABLEEQUIPMENT SMALL LOAD SWITCH TRANSISTOR WITHHIGH GAIN AND LOW SATURATIONVOLTA

MSC83303RF & MICROWAVE TRANSISTORSGENERAL PURPOSE AMPLIFIER APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER BALLASTED.VSWR CAPABILITY @ RATED:1CONDITIONS.HERMETIC STRIPAC PACKAGE.POUT 3.0 W MIN. WITH 7.0 dB GAIN=@ 3.0 GHz.250 2LFL (S010)hermetically sealedORDER CODE BRANDINGMSC83303 83303PIN CONNECTIONDESCRIPTIONThe MSC83303 is a common base hermetic

STP4NC80Z - STP4NC80ZFPSTB4NC80Z - STB4NC80Z-1N-CHANNEL 800V - 2.4 - 4A TO-220/FP/D2PAK/I2PAKZener-Protected PowerMESHIII MOSFETTYPE VDSS RDS(on) IDSTP4NC80Z/FP 800V

BC807-25BC807-40SMALL SIGNAL PNP TRANSISTORSPRELIMINARY DATAType MarkingBC807-25 5BBC807-40 5C SILICON EPITAXIAL PLANAR PNPTRANSISTORS MINIATURE SOT-23 PLASTIC PACKAGEFOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPES AREBC817-25 AND BC817-40 RESPECTIVELYSOT-23APPLICATIONS WELL SUITABLE FOR PORTABLEEQUIPMENT SMALL LOAD SWITCH

MSC81325MRF & MICROWAVE TRANSISTORSAVIONICS APPLICATIONSPRELIMINARY DATA.REFRACTORY/GOLD METALLIZATION.EMITTER BALLASTED.RUGGEDIZED VSWR :1.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.P 325 W MIN. WITH 6.7 dB GAINOUT = .400 x .400 2NLFL (S042)hermetically sealedORDER CODE BRANDINGMSC81325M 81325MPIN CONNECTIONDESCRIPTIONThe MSC813

MSC80185RF & MICROWAVE TRANSISTORSGENERAL PURPOSE LINEAR APPLICATIONS.EMITTER BALLASTED.CLASS A LINEAR OPERATION.COMMON EMITTER.VSWR CAPABILITY 20:1 @ RATEDCONDITIONS.ft 3.2 GHz TYPICAL.NOISE FIGURE 12.0 dB @ 2 GHz.230 4L STUD (S027).P 28 dBm MIN. @ 2.0 GHz=OUT hermetically sealedORDER CODE BRANDINGMSC80185 80185PIN CONNECTIONDESCRIPTIONThe MSC80185 is a herm

MSC81350MRF & MICROWAVE TRANSISTORSAVIONICS APPLICATIONS.REFRACTORY/GOLD METALLIZATION.RUGGEDIZED VSWR 20:1.INTERNAL INPUT/OUTPUT MATCHING.LOW THERMAL RESISTANCE.METAL/CERAMIC HERMETIC PACKAGE.P 350 W MIN. WITH 7.0 dB GAINOUT =.400 x .400 2NLFL (S042)hermetically sealedORDER CODE BRANDINGMSC81350M 81350MPIN CONNECTIONDESCRIPTIONThe MSC81350M device is a high powe

MSC82100RF & MICROWAVE TRANSISTORSGENERAL PURPOSE LINEAR APPLICATIONS.EMITTER BALLASTED.CLASS A LINEAR OPERATION.COMMON EMITTER.VSWR CAPABILITY :1 @ RATEDCONDITIONS.ft 1.6 GHz TYPICAL.NOISE FIGURE 15.5 dB @ 2 GHz.250 2LFL (S011).POUT 27 dBm MIN. @ 1.0 GHz= hermetically sealedORDER CODE BRANDINGMSC82100 82100PIN CONNECTIONDESCRIPTIONThe MSC82100 is a hermet

BC847BBC847CSMALL SIGNAL NPN TRANSISTORSPRELIMINARY DATAType MarkingBC847B 1FBC847C 1G SILICON EPITAXIAL PLANAR NPNTRANSISTORS MINIATURE SOT-23 PLASTIC PACKAGEFOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING BC847B - THE PNP COMPLEMENTARYTYPE IS BC857BSOT-23APPLICATIONS WELL SUITABLE FOR PORTABLEEQUIPMENT SMALL LOAD SWITCH TRANSISTORSWITH HIGH GAIN

MSC81035MRF & MICROWAVE TRANSISTORSAVIONICS APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED. VSWR CAPABILITY:1.LOW THERMAL RESISTANCE.INPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.280 2LFL (S068)epoxy sealed.P 35 W MIN. WITH 10.7 dB GAINOUT =ORDER CODE BRANDINGMSC81035M 81035MPIN CONNECTIONDESCRIPTIONThe MSC81035M is a

MSC80195RF & MICROWAVE TRANSISTORSGENERAL PURPOSE LINEAR APPLICATIONS.EMITTER BALLASTED.CLASS A LINEAR OPERATION.COMMON EMITTER.VSWR CAPABILITY 20:1 @ RATEDCONDITIONS.ft 3.2 GHz TYPICAL.NOISE FIGURE 12.0 dB @ 2 GHz.250 2LFL (S011).P 28 dBm MIN. @ 2.0 GHz=OUT hermetically sealedORDER CODE BRANDINGMSC80195 80195PIN CONNECTIONDESCRIPTIONThe MSC80195 is a hermeti

MSC81118RF & MICROWAVE TRANSISTORSGENERAL PURPOSE AMPLIFIER APPLICATIONS.EMITTER BALLASTED.VSWR CAPABILITY :1 @ RATEDCONDITIONS.HERMETIC STRIPAC PACKAGE.P 2.0 W MIN. WITH 10 dB GAIN @OUT =1.0 GHz.250 2LFL (S010)hermetically sealedORDER CODE BRANDINGMSC81118 81118PIN CONNECTIONDESCRIPTIONThe MSC81118 is a common base hermeticallysealed silicon NPN microw

MSC81400MRF & MICROWAVE TRANSISTORSAVIONICS APPLICATIONS.REFRACTORY\GOLD METALLIZATION.RUGGEDIZED VSWR 25:1.INTERNAL INPUT/OUTPUT MATCHING.LOW THERMAL RESISTANCE.METAL/CERAMIC HERMETIC PACKAGE.P 400 W MIN. WITH 6.5 dB GAINOUT =.400 x .500 2LFL (S038)hermetically sealedORDER CODE BRANDINGMSC81400M 81400MPIN CONNECTIONDESCRIPTIONThe MSC81400M "Super Power" transist

MSC82005RF & MICROWAVE TRANSISTORSGENERAL PURPOSE AMPLIFIER APPLICATIONS.EMITTER BALLASTED.VSWR CAPABILITY :1 @ RATEDCONDITIONS.REFRACTORY/GOLD METALLIZATION.HERMETIC STRIPAC PACKAGE.POUT 5.0 W MIN. WITH 7.0 dB GAIN=@ 2.0 GHz.250 2LFL (S010)hermetically sealedORDER CODE BRANDINGMSC82005 82005PIN CONNECTIONDESCRIPTIONThe MSC82005 is a common base hermeti

MSC83301RF & MICROWAVE TRANSISTORSGENERAL PURPOSE AMPLIFIER APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.VSWR CAPABILITY @ RATED:1CONDITIONS.HERMETIC STRIPAC PACKAGE.POUT 1.0 W MIN. WITH 7.0 dB GAIN=@ 3.0 GHz.250 2LFL (S010)hermetically sealedORDER CODE BRANDINGMSC83301 83301PIN CONNECTIONDESCRIPTIONThe MSC83301 is a common base her

MSC81450MRF & MICROWAVE TRANSISTORSAVIONICS APPLICATIONS.REFRACTORY\GOLD METALLIZATION.RUGGEDIZED VSWR 25:1.INTERNAL INPUT/OUTPUT MATCHING.LOW THERMAL RESISTANCE.METAL/CERAMIC HERMETIC PACKAGE.POUT 450 W MIN. WITH 7.0 dB GAIN=.400 x .500 2LFL (S038)hermetically sealedORDER CODE BRANDINGMSC81450M 81450MPIN CONNECTIONDESCRIPTIONThe MSC81450M device is a high power

MSC81058RF & MICROWAVE TRANSISTORSGENERAL PURPOSE AMPLIFIER APPLICATIONS.EMITTER BALLASTED.REFRACTORY/GOLD METALLIZATION.VSWR CAPABILITY @ RATED:1CONDITIONS.HERMETIC STRIPAC PACKAGE.POUT 10 W MIN. WITH 10 dB GAIN=@ 1 GHz.250 2LFL (S010)hermetically sealedORDER CODE BRANDINGMSC81058 81058PIN CONNECTIONDESCRIPTIONThe MSC81058 is a common base hermetically

MSC81402RF & MICROWAVE TRANSISTORSGENERAL PURPOSE AMPLIFIERS APPLICATIONSPRELIMINARY DATA.REFRACTORY/GOLD METALLIZATION.HIGH GAIN & COLLECTOR EFFICIENCY.RUGGED OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.P 2.0 W MIN. WITH 10.0 dB GAIN=OUT.250 2LFL (S010)hermetically sealedORDER CODE BRANDINGMSC81402 81402PIN CONNECTIONDESCRIPTIONThe MSC81402 is a 28 Volt, C

STU9NC80ZSTU9NC80ZIN-CHANNEL 800V - 0.82 - 8.6A Max220/I-Max220Zener-Protected PowerMESHIII MOSFETTYPE VDSS RDS(on) IDSTU9NC80Z 800 V

MSC81250MRF & MICROWAVE TRANSISTORSAVIONICS APPLICATIONS.REFRACTORY\GOLD METALLIZATION.RUGGEDIZED VSWR 20:1.INTERNAL INPUT/OUTPUT MATCHING.LOW THERMAL RESISTANCE.METAL/CERAMIC HERMETIC PACKAGE.P 250 W MIN. WITH 6.2 dB GAINOUT =.400 x .400 2NLFL (S042)hermetically sealedORDER CODE BRANDINGMSC81250M 81250MPIN CONNECTIONDESCRIPTIONThe MSC81250M device is a high powe

STP7NC80Z - STP7NC80ZFPSTB7NC80Z - STB7NC80Z-1N-CHANNEL 800V - 1.3 - 6.5A TO-220/FP/D2PAK/I2PAKZener-Protected PowerMESHIII MOSFETTYPE VDSS RDS(on) IDSTP7NC80Z 800 V

STW8NC80ZN-CHANNEL 800V - 1.3 - 6.7A TO-247Zener-Protected PowerMESHIII MOSFETTYPE VDSS RDS(on) IDSTW8NC80Z 800 V

MSC81035MPRF & MICROWAVE TRANSISTORSAVIONICS APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED. VSWR CAPABILITY:1.LOW THERMAL RESISTANCE.INPUT MATCHING.OVERLAY GEOMETRY.280 4LSL (S051).METAL/CERAMIC HERMETIC PACKAGEepoxy sealed.P 35 W MIN. WITH 10.7 dB GAINOUT =ORDER CODE BRANDINGMSC81035MP 81035MPPIN CONNECTIONDESCRIPTIONThe MSC81035MP i

BC857BC858SMALL SIGNAL PNP TRANSISTORSType MarkingBC857A 3EBC857B 3FBC858A 3JBC858B 3K2 SILICON EPITAXIAL PLANAR PNPTRANSISTORS3 MINIATURE PLASTIC PACKAGE FOR1APPLICATION IN SURFACE MOUNTINGCIRCUITSSOT-23 VERY LOW NOISE AF AMPLIFIER NPN COMPLEMENTS FOR BC857 IS BC847INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitBC857 BC8

MSC82306RF & MICROWAVE TRANSISTORSGENERAL PURPOSE AMPLIFIER APPLICATIONSPRELIMINARY DATA.REFRACTORY\GOLD METALLIZATION.VSWR CAPABILITY 20:1 @ RATEDCONDITIONS.HERMETIC STRIPAC PACKAGE.P 5.5 W MIN. WITH 9.6 dB GAINOUT =.250 2LFL (S010)hermetically sealedORDER CODE BRANDINGMSC82306 82306PIN CONNECTIONDESCRIPTIONThe MSC82306 is a common base hermeticallysealed s

MSC82307RF & MICROWAVE TRANSISTORSGENERAL PURPOSE AMPLIFIER APPLICATIONSPRELIMINARY DATA.REFRACTORY/GOLD METALLIZATION.VSWR CAPABILITY 20:1 @ RATEDCONDITIONS.HERMETIC STRIPAC PACKAGE.P 7.0 W MIN. WITH 9.6 dB GAINOUT =.250 2LFL (S010)hermetically sealedORDER CODE BRANDINGMSC82307 82307PIN CONNECTIONDESCRIPTIONThe MSC82307 is a common base hermeticallysealed s

STP6NC80Z - STP6NC80ZFPSTB6NC80Z - STB6NC80Z-1N-CHANNEL 800V - 1.5 - 5.4A TO-220/FP/DPAK/IPAKZener-Protected PowerMESHIII MOSFETTYPE VDSS RDS(on) IDSTP6NC80Z/FP 800V

MSC82040RF & MICROWAVE TRANSISTORSGENERAL PURPOSE LINEAR APPLICATIONS.EMITTER BALLASTED.CLASS A LINEAR OPERATION.COMMON EMITTER.VSWR CAPABILITY :1 @ RATEDCONDITIONS.ft 1.6 GHz TYPICAL.NOISE FIGURE 15.5 dB @ 2 GHz.230 4L STUD (S027).POUT 27 dBm MIN. @ 1.0 GHz= hermetically sealedORDER CODE BRANDINGMSC82040 82040PIN CONNECTIONDESCRIPTIONThe MSC82040 is a her

BC847BWBC847CWSMALL SIGNAL NPN TRANSISTORSPRELIMINARY DATAType MarkingBC847BW 1FWBC847CW 1GW SILICON EPITAXIAL PLANAR NPNTRANSISTORS MINIATURE SOT-323 PLASTIC PACKAGEFOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING BC847BW - THE PNP COMPLEMENTARYTYPE IS BC857BWSOT-323APPLICATIONS WELL SUITABLE FOR PORTABLEEQUIPMENT SMALL LOAD SWITCH TRANSISTORSWITH

MSC80197RF & MICROWAVE TRANSISTORSGENERAL PURPOSE LINEAR APPLICATIONS.EMITTER BALLASTED.CLASS A LINEAR OPERATION.COMMON EMITTER.VSWR CAPABILITY 15:1 @ RATEDCONDITIONS.ft 3.2 GHz TYPICAL.NOISE FIGURE 12.5 dB @ 2 GHz.250 2LFL (S011).P 31.7 dBm MIN. @ 2.0 GHz=OUT hermetically sealedORDER CODE BRANDINGMSC80197 80197PIN CONNECTIONDESCRIPTIONThe MSC80197 is a herme

STW9NC80ZN-CHANNEL 800V - 0.82 - 9.4A TO-247Zener-Protected PowerMESHIII MOSFETTYPE VDSS RDS(on) IDSTW9NC80Z 800 V

TPC8A07-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V -H) TPC8A07-H High Efficiency DC-DC Converter Applications Notebook PC Applications Unit: mmPortable-Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: (Q1) QSW = 3.4 nC (typ.) (Q2) QSW =

TPC8127 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC8127 Lithium Ion Battery Applications Power Management Switch Applications Unit: mm Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 5 m (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 to -2.0 V (

TPC8066-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8066-HTPC8066-HTPC8066-HTPC8066-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 3.2 nC (typ.)(4) Lo

TPC8108 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) TPC8108 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: R = 9.5 m (typ.) DS (ON) High forward transfer admittance: |Y | = 24 S (typ.) fs Low leakage

TPC8084MOSFETs Silicon N-Channel MOS (U-MOS)TPC8084TPC8084TPC8084TPC80841. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Notebook PCs Mobile Equipments2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 5.4 m (typ

TPC8026 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8026 Lithium Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 5.1 m (typ.) High forward transfer admittance: |Yfs| = 30 S (typ.) Low leakage curre

TPC8133MOSFETs Silicon P-Channel MOS (U-MOS)TPC8133TPC8133TPC8133TPC81331. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches2. Features2. Features2. Features2. Features(1) Small footprint due to small and thin package(2) Low drain-source on-resistance: RDS(ON) = 11 m (typ.) (VGS = -10

TPC8042 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8042 Lithium-Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PC Applications Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 2.7 m (typ.) High forward transfer admittance: |Yfs| = 42 S (typ.) Low leakage curr

TPCC8009 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS) TPCC8009 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 5 m (typ.) ( VGS = 10 V) Low leakage current: IDSS = 10 A (max) (VDS = 30 V)

TPC8224-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8224-HTPC8224-HTPC8224-HTPC8224-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate change: QSW = 1.9 nC (typ.)(4) Lo

TPC8A01 Q1:TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(UMOS) Q2:TOSHIBA INCLUDES SCHOTTKY BARRIER DIODE FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(UMOS) TPC8A01 Unit: mmDC-DC CONVERTER Notebook PC Portable Machines and Tools Includes Schottky Barrier Diode Type. (Q2) Low Forward Voltage: V =0.6V(Max.) DSF Small footprint due to

TPCC8007MOSFETs Silicon N-channel MOS (U-MOS)TPCC8007TPCC8007TPCC8007TPCC80071. Applications1. Applications1. Applications1. Applications Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 3.5 m (typ.) (VGS = 4.5 V)(3) Low leakage

TPC8209 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) TPC8209 Lithium Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance: R = 30 m (typ.) DS (ON) High forward transfer admittance: |Y | = 10 S (typ.) fs Low leakage current:

TPCC8131MOSFETs Silicon P-Channel MOS (U-MOS)TPCC8131TPCC8131TPCC8131TPCC81311. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 13.5 m (typ.) (VGS = -10 V)(3) Low leakag

TPC8081MOSFETs Silicon N-Channel MOS (U-MOS)TPC8081TPC8081TPC8081TPC80811. Applications1. Applications1. Applications1. Applications Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 2.5 m (typ.) (VGS = 10 V)(3) Low leakage curren

TPC8004 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) TPC8004 Lithium Ion Battery Applications Unit: mm Portable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance : R = 37 m (typ.) DS (ON) High forward transfer admittance : |Y | = 6 S (typ.) fs Low leakage current

TPC8122 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC8122 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 6.3 m (typ.) High forward transfer admittance: |Yfs| = 30S (typ.) Low leakage current: IDSS = -10A (max) (VDS = -30 V

TPC8126 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC8126 Lithium Ion Battery Applications Power Management Switch Applications Unit: mm Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 7.5 m (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 to -2.0 V

TPC8407MOSFETs Silicon P-/N-Channel MOS (U-MOS/U-MOS-H)TPC8407TPC8407TPC8407TPC84071. Applications1. Applications1. Applications1. Applications Motor Drivers CCFL Inverters Mobile Equipments2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) High speed switching(3) Low drain-source on-resistance

TPC8212-H www.DataSheet4U.comTOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8212-H High-Efficiency DC/DC Converter Applications Unit: mmNotebook PC Applications Portable-Equipment Applications Small footprint due to small and thin package High-speed switching Small gate charge: QSW = 5.5 nC (typ.) Low drain-source O

TPCC8002-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCC8002-H High-Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 7.1 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 7.6

TPC8053-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8053-H Switching Regulator Applications Motor Drive Applications Unit: mmDC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 6.7 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 14.1 m (typ.)

TPC8047-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8047-H Switching Regulator Applications Motor Drive Applications Unit: mmDC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 11 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 5.1 m (typ.) H

TPCC8076MOSFETs Silicon N-Channel MOS (U-MOS)TPCC8076TPCC8076TPCC8076TPCC80761. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Notebook PCs Mobile Equipments2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 3.7 m

TPC8227-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8227-HTPC8227-HTPC8227-HTPC8227-H1. Applications1. Applications1. Applications1. Applications DC-DC Converters CCFL Inverters2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 2.4 nC (typ.)(4) Low drain-source on-resistance: RDS(O

TPC8016-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOS III) TPC8016-H High Speed and High Efficiency DC-DC Converters Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge: Qg = 48 nc (typ.) Low drain-source ON resistance: R = 3.7 m

TPC8406-H TOSHIBA Field Effect Transistor Silicon P/N-Channel MOS Type (P-ChannelN-Channel Ultra-High-Speed U-MOSIII) TPC8406-H High Efficiency DCDC Converter Applications Notebook PC Applications Unit: mmPortable Equipment Applications CCFL Inverter Applications Small footprint due to a small and thin package High speed switching Low drain-source ON-resi

TPC8117 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC8117 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Small footprint due to small and thin package Low drain-source ON-resistance : RDS (ON) = 3.0 m (typ.) High forward transfer admittance : |Yfs| = 54 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -

TPC8046-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8046-H Switching Regulator Applications Motor Drive Applications Unit: mmDC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 15 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 3.8 m (typ.) H

TPC8110 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPC8110 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: R = 17 m (typ.) DS (ON) High forward transfer admittance: |Y | = 16 S (typ.) fs Low leakage

TPC8210 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) TPC8210 Lithium Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PC Applications Low drain-source ON resistance: RDS (ON) = 11 m (typ.) High forward transfer admittance: |Y | = 13 S (typ.) fs Low leakage current: I = 10 A (max) (V = 30 V) DSS DS Enhancement

TPC8105-H TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII) TPC8105-H High Speed and High Efficiency DC-DC Converters Unit: mmLithium Ion Battery Applications Notebook PCs Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge : Qg = 32 nC (typ.) Low drain-source ON resistan

TPC8020-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8020-H High-Efficiency DC/DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 6.9 nC (typ.) Low drain-source ON- resistance: RD

TPC8208 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC8208 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 38 m (typ.) High forward transfer admittance: |Yfs| = 6.3 S (typ.) Low leakage curre

TPC8017-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII) TPC8017-H High Speed and High Efficiency DC-DC Converters Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge: Qg = 25 nC (typ.) Low drain-source ON resistance: RDS

TPCC8065-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPCC8065-HTPCC8065-HTPCC8065-HTPCC8065-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 4.3 nC (typ.)(

TPC8401 TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (U-MOSII) TPC8401 Lithium Ion Secondary Battery Applications Portable Equipment Applications Unit: mmNotebook PCs Low drain-source ON resistance : P Channel RDS (ON) = 27 m (typ.) N Channel R = 14 m (typ.) DS (ON) High forward transfer admittance : P Channel |Yfs| = 7 S (typ.) N Channel

TPC8027 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8027 Lithium Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 2.1 m (typ.) High forward transfer admittance: |Yfs| = 48 S (typ.) Low leakage curre

TPC8087MOSFETs Silicon N-Channel MOS (U-MOS)TPC8087TPC8087TPC8087TPC80871. Applications1. Applications1. Applications1. Applications Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 1.7 m (typ.) (VGS = 10 V)(3) Low leakage curren

TPC8033-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8033-H High Efficiency DC/DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package High-speed switching Small gate charge: QSW = 9.6 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 4.0 m (

TPC8059-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8059-HTPC8059-HTPC8059-HTPC8059-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) High-speed switching(3) Small gate change:

TPC8050-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8050-H Switching Regulator Applications Motor Drive Applications Unit: mmDC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 9.2 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 9.3 m (typ.)

TPC8010-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOSIII) TPC8010-H DC-DC Converters Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge: Q = 18 nC (typ.) g Low drain-source ON resistance: RDS (ON) = 12 m (typ.) High fo

TPC8037-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8037-H High-Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 5.0 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 7.6 m

TPC8114 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC8114 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 3.1 m (typ.) High forward transfer admittance: |Yfs| = 47 S (typ.) Low leakage curre

TPCC8064-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPCC8064-HTPCC8064-HTPCC8064-HTPCC8064-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 5.0 nC (typ.)(

TPC8112 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC8112 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 5.0m (typ.) High forward transfer admittance: |Yfs| = 31 S (typ.) Low leakage curren

TPC8032-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8032-H High-Efficiency DC/DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 8.4 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 5.0 m

TPC8115 PMOS (U-MOS IV) TPC8115 2 : mm PC : RDS (ON) = 6.5 m () : |Yfs| = 40 S (

TPCC8107MOSFETs Silicon P-Channel MOS (U-MOS)TPCC8107TPCC8107TPCC8107TPCC81071. Applications1. Applications1. Applications1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 23.5 m (typ.) (VGS = -10 V)(3) Low

TPC8021-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8021-H High-Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 3.6 nC (typ.) Low drain-source ON-resistance: RDS

TPCC8005-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCC8005-H High-Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 9.1 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 5.2

TPC8A04-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPC8A04-H High Efficiency DC-DC Converter Applications Notebook PC Applications Unit: mmPortable Equipment Applications Built-in schottky barrier diode Low forward voltage: VDSF = -0.6 V (max) High-speed switching Small gate charge: QSW = 13 nC (ty

TPC8064-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8064-HTPC8064-HTPC8064-HTPC8064-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 5.0 nC (typ.)(4) Lo

TPCC8106MOSFETs Silicon P-Channel MOS (U-MOS)TPCC8106TPCC8106TPCC8106TPCC81061. Applications1. Applications1. Applications1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 9.5 m (typ.) (VGS = -10 V)(3) Low

TPC8123 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC8123 Lithium Ion Battery Applications Power Management Switch Applications Unit: mm Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 7.0 m (typ.) High forward transfer admittance: |Yfs| = 36 S (typ.) Low leakage current: IDSS = -10 A (max

TPC8104-H TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII) TPC8104-H High Speed and High Efficiency DC-DC Converters Unit: mmLithium Ion Battery Applications Notebook PCs Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge : Qg = 17 nC (typ.) Low drain-source ON resistan

TPC8018-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8018-H High-Speed and High-Efficiency DC/DC Converter Unit: mmApplications Notebook PC Applications Portable-Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 12 nC (typ.) Low drain-source ON

TPCC8104MOSFETs Silicon P-Channel MOS (U-MOS)TPCC8104TPCC8104TPCC8104TPCC81041. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 6.8 m (typ.) (V

TPCC8102 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS) TPCC8102 Notebook PC Applications Unit: mmPortable Equipment Applications Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 14.5 m (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 A (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 t

TPC8085MOSFETs Silicon N-Channel MOS (U-MOS)TPC8085TPC8085TPC8085TPC80851. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 3.8 m

TPC8301 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2--MOSVI) TPC8301 Lithium Ion Battery Applications Portable Equipment Applications Unit: mmNotebook PCs Small footprint due to small and thin package Low drain-source ON resistance : R = 95 m (typ.) DS (ON) High forward transfer admittance : |Y | = 4 S (typ.) fs Low leakage current : IDSS = -

TPC8132MOSFETs Silicon P-Channel MOS (U-MOS)TPC8132TPC8132TPC8132TPC81321. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches2. Features2. Features2. Features2. Features(1) Small footprint due to small and thin package(2) Low drain-source on-resistance: RDS(ON) = 20 m (typ.) (VGS = -10

TPC8404 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (P Channel -MOSV/N Channel -MOSV) TPC8404 Motor Dreive Unit: mmSwitching Regulator Applications Low drain-source ON resistance: P Channel RDS (ON) = 1.85 (typ.) N Channel RDS (ON) = 1.2 (typ.) High forward transfer admittance: P Channel |Yfs| = 1.1 S (typ.) N Channel |Yfs| = 1.3 S (ty

TPC8024-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8024-H High-Efficiency DCDC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 6.9 nC (typ.) Low drain-source ON-resistance: R

TPC8092MOSFETs Silicon N-Channel MOS (U-MOS)TPC8092TPC8092TPC8092TPC80921. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 7.6 m

TPC8214-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8214-H High-Efficiency DCDC Converter Applications Unit: mmCCFL Inverters Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 2.0 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 130 m (typ.) High forward

TPC8067-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8067-HTPC8067-HTPC8067-HTPC8067-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 1.9 nC (typ.)(4) Lo

TPC8041 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8041 Lithium Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 5.5 m (typ.) High forward transfer admittance: |Yfs| = 26 S (typ.) Low leakage curren

TPC8055-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8055-HTPC8055-HTPC8055-HTPC8055-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) High-speed switching(3) Small gate change:

TPCC8073MOSFETs Silicon N-Channel MOS (U-MOS)TPCC8073TPCC8073TPCC8073TPCC80731. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) =

TPC8107 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) TPC8107 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: R = 5.5 m (typ.) DS (ON) High forward transfer admittance: |Y | = 31 S (typ.) fs Low leakage

TPCC8008 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS) TPCC8008 Notebook PC Applications Unit: mmPortable Equipment Applications Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 4.5 m (typ.) ( VGS = 10 V) Low leakage current: IDSS = 10 A (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.

TPC8063-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8063-HTPC8063-HTPC8063-HTPC8063-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) High-speed switching(3) Small gate change:

TPCC8006-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCC8006-H High-Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 7.4 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 6.5

TPCC8068-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPCC8068-HTPCC8068-HTPCC8068-HTPCC8068-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 3.3 nC (typ.)(

TPC8014 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) TPC8014 Lithium Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 11 m (typ.) High forward transfer admittance: |Yfs| = 10 S (typ.) Low leakage curre

TPCC8061-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPCC8061-HTPCC8061-HTPCC8061-HTPCC8061-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 3.5 nC (typ.)(

TPC8116-H TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8116-H High Efficiency DCDC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications CCFL Inverter Applications Small footprint due to a small and thin package High speed switching Small gate charge: QSW = 9.7 nC (typ.) Low

TPCC8070MOSFETs Silicon N-channel MOS (U-MOS)TPCC8070TPCC8070TPCC8070TPCC80701. Applications1. Applications1. Applications1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 10.8 m (typ.) (VGS = 10 V)(3) Low

TPC8078MOSFETs Silicon N-Channel MOS (U-MOS)TPC8078TPC8078TPC8078TPC80781. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Notebook PCs Mobile Equipments2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 1.9 m (typ

TPC8025 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8025 Lithium-Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PC Applications Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 7.5 m (typ.) High forward transfer admittance: |Yfs| = 26 S (typ.) Low leakage cur

TPC8001 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) TPC8001 Lithium Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance : R = 15 m (typ.) DS (ON) High forward transfer admittance : |Y | = 11 S (typ.) fs Low leakage current

TPC8013-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOS III) TPC8013-H High Speed and High Efficiency DC-DC Converters Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge: Qg = 48 nc (typ.) Low drain-source ON resistance: RDS (ON)

TPC8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) TPC8303 Lithium Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PCs Low drain-source ON resistance : RDS (ON) = 27 m (typ.) High forward transfer admittance : |Y | = 7 S (typ.) fs Low leakage current : I = -10 A (max) (V = -30 V) DSS DS Enhancement-mode : Vt

TPC8206 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) TPC8206 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: R = 40 m (typ.) DS (ON) High forward transfer admittance: |Y | = 7.0 S (typ.) fs Low leakage c

TPC8109 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) TPC8109 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: R = 14 m (typ.) DS (ON) High forward transfer admittance: |Y | = 19 S (typ.) fs Low leakage c

TPCC8137MOSFETs Silicon P-Channel MOS (U-MOS)TPCC8137TPCC8137TPCC8137TPCC81371. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 8.0 m (typ.) (VGS = -4.5 V)(3) Low leakage current: IDSS = -10 A (max) (VDS

TPC8065-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8065-HTPC8065-HTPC8065-HTPC8065-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 4.3 nC (typ.)(4) Lo

TPC8408MOSFETs Silicon P-/N-Channel MOS (U-MOS/U-MOS-H)TPC8408TPC8408TPC8408TPC84081. Applications1. Applications1. Applications1. Applications Mobile Equipments Motor Drivers2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) High speed switching(3) Low drain-source on-resistanceP-channel RDS(ON) =

TPC8213-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8213-H High-Efficiency DCDC Converter Applications Unit: mmNotebook PC Applications Portable-Equipment Applications Small footprint due to small and thin package High-speed switching Small gate charge: QSW = 2.9 nC (typ.) Low drain-source ON-resistance: RDS

TPC8A06-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPC8A06-H High Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Built-in schottky barrier diode Low forward voltage: V = 0.6 V (max) DSF High-speed switching Small gate charge: QSW = 4.5

TPC8022-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOS III) TPC8022-H High-Efficiency DC/DC Converter Applications Unit: mmNotebook PC Applications Portable-Equipment Applications CCFL Inverter Applications Small footprint due to a small and thin package High speed switching Small gate charge : QSW = 3.5 nC (typ.) Low drain-so

TPC8223-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8223-HTPC8223-HTPC8223-HTPC8223-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate change: QSW = 3.6 nC (typ.)(4) Lo

TBC847Bipolar Transistors Silicon NPN Epitaxial TypeTBC847TBC847TBC847TBC8471. Applications1. Applications1. Applications1. Applications Low-Frequency Amplifiers2. Packaging and Internal Circuit2. Packaging and Internal Circuit2. Packaging and Internal Circuit2. Packaging and Internal Circuit1. Base2. Emitter3. CollectorSOT233. Absolute Maximum Ratings (

TPC8038-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8038-H High-Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 5.0 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 7.6 m

TPC8086MOSFETs Silicon N-Channel MOS (U-MOS)TPC8086TPC8086TPC8086TPC80861. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 5.0 m

TPC8089-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8089-HTPC8089-HTPC8089-HTPC8089-H1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators Motor Drivers DC-DC Converters2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 3.6 nC (typ.)(3) Low drain-source on-resistanc

TPC8221-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8221-HTPC8221-HTPC8221-HTPC8221-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate change: QSW = 3.5 nC (typ.)(4) Lo

TPC8060-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8060-H High Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 16 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 3.1 m

TPC8034-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8034-H High-Efficiency DC/DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 16 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 2.6 m

TPC8111 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPC8111 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 8.1 m (typ.) High forward transfer admittance: |Yfs| = 23 S (typ.) Low leakage curre

TPC8030 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8030 Lithium Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 7.5 m (typ.) High forward transfer admittance: |Yfs| = 26 S (typ.) Low leakage curren

TPC8A02-H OSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (Ultra-High-Speed U-MOS ) TPC8A02-H High-Efficiency DC/DC Converter Applications Unit: mmNotebook PC Applications Portable-Equipment Applications Built-in Schottky barrier diode Low forward voltage: V = 0.6V (max) DSF High-speed switching. Small gate

TPCC8138MOSFETs Silicon P-Channel MOS (U-MOS)TPCC8138TPCC8138TPCC8138TPCC81381. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 6.0 m (typ.) (VGS = -4.5 V)(3) Low leakage current: IDSS = -10 A (max) (VDS

TPC8052-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8052-H Switching Regulator Applications Motor Drive Applications Unit: mmDC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 6.6 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 7.4 m (typ.)

TPCC8084MOSFETs Silicon N-Channel MOS (U-MOS)TPCC8084TPCC8084TPCC8084TPCC80841. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Notebook PCs Mobile Equipments2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 5.2 m

TPCC8003-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCC8003-H High-Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 4.2 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 14.3

TPC8031-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8031-H High-Efficiency DC/DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 5.0 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 10.1 m

TPC8049-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8049-H Switching Regulator Applications Motor Drive Applications Unit: mmDC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 13 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 6.9 m (typ.) H

TPC8120 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC8120 Lithium Ion Battery Applications Power Management Switch Applications Unit: mm Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 2.6 m (typ.) High forward transfer admittance: |Yfs| =80 S (typ.) Low leakage current: IDSS = -10 A (max)

TPCC8001-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCC8001-H High-Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 7.1 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 7.6

TPCC8093MOSFETs Silicon N-Channel MOS (U-MOS)TPCC8093TPCC8093TPCC8093TPCC80931. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 4.5 m (typ.) (VGS = 4.5 V)(3) Low leakage cu

TPC8129MOSFETs Silicon P-Channel MOS (U-MOS)TPC8129TPC8129TPC8129TPC81291. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 17 m (typ.) (VGS = -

TPCC8103 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS) TPCC8103 Notebook PC Applications Unit: mmPortable Equipment Applications Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 9.4 m (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 A (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 to

TPCC8074MOSFETs Silicon N-Channel MOS (U-MOS)TPCC8074TPCC8074TPCC8074TPCC80741. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switchings Notebook PCs2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON)

TPC8061-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8061-H High Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 3.5 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 21 m

TPCC8067-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPCC8067-HTPCC8067-HTPCC8067-HTPCC8067-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 1.9 nC (typ.)(

TPC8062-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8062-HTPC8062-HTPC8062-HTPC8062-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) High-speed switching(3) Small gate change:

TPC8012-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (F-MOSV) TPC8012-H Switching Regulator Application Unit: mmDC-DC Converters Low drain-source ON resistance: RDS (ON) = 0.28 (typ.) High forward transfer admittance: |Y | = 1.35 S (typ.) fs Low leakage current: I = 100 A (max) (V = 200 V) DSS DS Enhancement mode: Vth = 3.0 to 5.0 V (VD

TPCC8105 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS) TPCC8105 Lithium Ion Battery Applications Unit: mmPower Management Switch Applications Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 6.0 m (typ.)( VGS = -10 V) Low leakage current: IDSS = -10 A (max) (VDS = -30 V) Enhancement mode: V

TPC8218-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8218-H DC-DC Converter Applications Unit: mmCCFL Inverters Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 2.6 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 38 m (typ.) High forward transfer admittance: |Yfs| = 12 S (

TPC8302 2TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L --MOSVI) TPC8302 Lithium Ion Battery Applications Portable Equipment Applications Unit: mmNotebook PCs 2.5 V Gate drive Small footprint due to small and thin package Low drain-source ON resistance: R = 100 m (typ.) DS (ON) High forward transfer admittance: |Yfs| = 5 S (typ.) Low leakag

TPC8080MOSFETs Silicon N-Channel MOS (U-MOS)TPC8080TPC8080TPC8080TPC80801. Applications1. Applications1. Applications1. Applications Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 2.2 m (typ.) (VGS = 10 V)(3) Low leakage curren

TPC8036-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8036-H High Efficiency DC-DC Converter Applications Notebook PC Applications Unit: mmPortable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: Q = 13 nC (typ.) SW Low drain-source ON-resistance: R = 3.1 m (typ.

TPC8211 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) TPC8211 Lithium Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PC Applications Low drain-source ON resistance: RDS (ON) = 25 m (typ.) High forward transfer admittance: |Y | = 7.0 S (typ.) fs Low leakage current: I = 10 A (max) (V = 30 V) DSS DS Enhancemen

TPC8125 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC8125 Lithium Ion Battery Applications Power Management Switch Applications Unit: mm Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 10 m (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 to -2.0 V

TPC8051-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8051-H Switching Regulator Applications Motor Drive Applications Unit: mmDC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 16 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 6.3 m (typ.) H

TPC8A03-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPC8A03-H High Efficiency DC-DC Converter Applications Notebook PC Applications Unit: mmPortable Equipment Applications Built-in schottky barrier diode Low forward voltage: VDSF = -0.6 V (max) High-speed switching Small gate charge: QSW = 8.4 nC (t

TPC8405 TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (P Channel U-MOS IV/N Channel U-MOS III) TPC8405 Lithium Ion Secondary Battery Applications Portable Equipment Applications Notebook PC Applications Unit: mm Low drain-source ON resistance : P Channel RDS (ON) = 25 m (typ.) N Channel RDS (ON) = 20 m (typ.) High forward transfer admittance : P Cha

TPC8124 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC8124 Lithium Ion Battery Applications Power Management Switch Applications Unit: mm Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 6.1 m (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -40 V) Enhancement mode: Vth = -0.8 to -2.0 V

TPC8088MOSFETs Silicon N-Channel MOS (U-MOS)TPC8088TPC8088TPC8088TPC80881. Applications1. Applications1. Applications1. Applications Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 1.9 m (typ.) (VGS = 10 V)(3) Low leakage curren

TPCC8A01-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPCC8A01-H High Efficiency DC-DC Converter Applications Notebook PC Applications Unit: mmPortable Equipment Applications Built-in a Schottky barrier diode Low forward voltage: VDSF = -0.6 V (max) High-speed switching Small gate charge: QSW = 4.

TPC8040-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8040-H High Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 5.1 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 6.4 m

TPC8119 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSV) TPC8119 Lithium-Ion Battery Applications Unit: mmLoad switch Applications Notebook PC Applications Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 10 m (typ.) High forward transfer admittance: |Yfs| = 24 S (typ.) Low leakage current: IDSS

TPC8074MOSFETs Silicon N-Channel MOS (U-MOS)TPC8074TPC8074TPC8074TPC80741. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 5.1 m

TPC8029 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8029 Lithium Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 2.9 m (typ.) High forward transfer admittance: |Yfs| = 40 S (typ.) Low leakage curre

TPCC8062-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPCC8062-HTPCC8062-HTPCC8062-HTPCC8062-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 7.4 nC (typ.)(

TPCC8066-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPCC8066-HTPCC8066-HTPCC8066-HTPCC8066-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 3.2 nC (typ.)(

TPCC8069MOSFETs Silicon N-channel MOS (U-MOS)TPCC8069TPCC8069TPCC8069TPCC80691. Applications1. Applications1. Applications1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 6.5 m (typ.) (VGS = 10 V)(3) Low l

TPC8118 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC8118 Notebook PC Applications Unit: mm Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 5.5 m (typ.) High forward transfer admittance: |Yfs| = 36 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -30 V) Enhancement mode: Vth = -

TPC8128 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC8128 Lithium Ion Battery Applications Unit: mmPower Management Switch Applications Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 3.9 m (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 to -2.0 V

TPC8216-H www.DataSheet4U.comTOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8216-H High Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications Portable-Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 3.4 nC (typ.) Low drain-source ON-resistance

TPC8113 PMOS (U-MOS IV) TPC8113 2 : mm PC : RDS (ON) = 8 m () : |Yfs| = 23 S (

TPC8035-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8035-H High Efficiency DC-DC Converter Applications Notebook PC Applications Unit: mmPortable Equipment Applications Small footprint due to small and thin package High-speed switching Small gate charge: Q = 17 nC (typ.) SW Low drain-source ON-resistance: R = 2.3 m (typ.)

TPC8039-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8039-H High Efficiency DC-DC Converter Applications Notebook PC Applications Unit: mmPortable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: Q = 8.6 nC (typ.) SW Low drain-source ON-resistance: R = 4.1 m (typ

TPC8003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) TPC8003 Lithium Ion Battery Applications Portable Equipment Applications Unit: mmNotebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance : R = 5.4 m (typ.) DS (ON) High forward transfer admittance : |Y | = 21 S (typ.) fs Low leakage current

TPC8009-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOSIII) TPC8009-H High Speed and High Efficiency DC-DC Converters Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge: Q = 29 nC (typ.) g Low drain-source ON resistance: R = 8 m

TPCC8136MOSFETs Silicon P-Channel MOS (U-MOS)TPCC8136TPCC8136TPCC8136TPCC81361. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 13 m (typ.) (VGS = -4.5 V)(3) Low leakage current:

TPC8228-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8228-HTPC8228-HTPC8228-HTPC8228-H1. Applications1. Applications1. Applications1. Applications DC-DC Converters CCFL Inverters2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 2.6 nC (typ.)(4) Low drain-source on-resistance: RDS(O

TPC8134MOSFETs Silicon P-Channel MOS (U-MOS)TPC8134TPC8134TPC8134TPC81341. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches2. Features2. Features2. Features2. Features(1) Small footprint due to small and thin package(2) Low drain-source on-resistance: RDS(ON) = 39 m (typ.) (VGS = -10

TPC8075MOSFETs Silicon N-Channel MOS (U-MOS)TPC8075TPC8075TPC8075TPC80751. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Notebook PCs Mobile Equipments2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 2.1 m (typ

TPC8028 NMOS (U-MOS) TPC8028 : mm PC : RDS (ON) = 3.5m () : |Yfs| = 40 S (

TPC8076MOSFETs Silicon N-Channel MOS (U-MOS)TPC8076TPC8076TPC8076TPC80761. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Notebook PCs Mobile Equipments2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 3.9 m (typ

TPC8056-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8056-HTPC8056-HTPC8056-HTPC8056-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) High-speed switching(3) Small gate change:

TPC8048-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8048-H Switching Regulator Applications Motor Drive Applications Unit: mmDC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 17 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 4.6 m (typ.) H

TPC8229-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8229-HTPC8229-HTPC8229-HTPC8229-H1. Applications1. Applications1. Applications1. Applications DC-DC Converters CCFL Inverters2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 2.4 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) = 53 m (typ.)(4)

TPC8057-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8057-HTPC8057-HTPC8057-HTPC8057-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) High-speed switching(3) Small gate change:

TPC8058-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8058-HTPC8058-HTPC8058-HTPC8058-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) High-speed switching(3) Small gate change:

TPC8073MOSFETs Silicon N-Channel MOS (U-MOS)TPC8073TPC8073TPC8073TPC80731. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 3.8 m

TPC8A05-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPC8A05-H High Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Built-in schottky barrier diode Low forward voltage: V = 0.6 V (max) DSF High-speed switching Small gate charge: QSW = 3.7

TPC8082MOSFETs Silicon N-Channel MOS (U-MOS)TPC8082TPC8082TPC8082TPC80821. Applications1. Applications1. Applications1. Applications Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 3.1 m (typ.) (VGS = 10 V)(3) Low leakage curren

TPC8045-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8045-H Switching Regulator Applications Motor Drive Applications Unit: mmDC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 23 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 2.7 m (typ.) H

TPC8121 PMOS (U-MOS) TPC8121 PC : mm 2 : RDS (ON) = 8.0 m () : |Yfs| = 23 S (

TPC8207 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC8207 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 16 m (typ.) High forward transfer admittance: |Yfs| = 11 S (typ.) Low leakage curren

BC846/847/848/849/8503Switching and Amplifier Applications Suitable for automatic insertion in thick and thin-film circuits Low Noise: BC849, BC850 Complement to BC856 ... BC8602SOT-2311. Base 2. Emitter 3. Collector NPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage

January 2012FDC8886N-Channel Power Trench MOSFET 30 V, 6.5 A, 23 mFeatures General Description Max rDS(on) = 23 m at VGS = 10 V, ID = 6.5 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 36 m at VGS = 4.5 V, ID = 6.0 Abeen optimized for rDS(on) switching performance. High performance trench te

March 2011FDMC8026SN-Channel PowerTrench SyncFETTM 30 V, 21 A, 4.4 mFeatures General DescriptionThe FDMC8026S has been designed to minimize losses in Max rDS(on) = 4.4 m at VGS = 10 V, ID = 19 Apower conversion application. Advancements in both silicon and Max rDS(on) = 5.2 m at VGS = 4.5 V, ID = 17.5 Apackage technologies have been combined to offer the lowest rDS

September 2014FDMC86160N-Channel Shielded Gate PowerTrench MOSFET 100 V, 43 A, 14 mFeatures General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that Max rDS(on) = 14 m at VGS = 10 V, ID = 9 Aincorporates Shielded Gate technology. This process has been Max rDS(on) = 23 m

January 2012FDC8884N-Channel Power Trench MOSFET 30 V, 6.5 A, 23 mFeatures General Description Max rDS(on) = 23 m at VGS = 10 V, ID = 6.5 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 30 m at VGS = 4.5 V, ID = 6.0 Abeen optimized for rDS(on) switching performance. High performance trench te

October 2012FDMC86012N-Channel Power Trench MOSFET 30 V, 88 A, 2.7 mFeatures General Description Max rDS(on) = 2.7 m at VGS = 4.5 V, ID = 23 A This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in Max rDS(on) = 4.7 m at VGS = 2.5 V, ID = 17.5 AMOSFET construction, the various components of gate charge High p

July 2013FDMC8030Dual N-Channel Power Trench MOSFET 40 V, 12 A, 10 mFeatures General Description Max rDS(on) = 10 m at VGS = 10 V, ID = 12 AThis device includes two 40V N-Channel MOSFETs in a dual Power 33 (3 mm X 3 mm MLP) package. The package is Max rDS(on) = 14 m at VGS = 4.5 V, ID = 10 Aenhanced for exceptional thermal performance. Max rDS(on) = 28 m at VGS =

March 2008FDMC8462tmN-Channel Power Trench MOSFET 40V, 20A, 5.8mFeatures General Description Max rDS(on) = 5.8m at VGS = 10V, ID = 13.5A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 8.0m at VGS = 4.5V, ID = 11.8Abeen especially tailored to minimize the on-state resistance and Low Profi

May 2013FDC86244N-Channel Shielded Gate PowerTrench MOSFET 150 V, 2.3 A, 144 mFeatures General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that Max rDS(on) = 144 m at VGS = 10 V, ID = 2.3 Aincorporates Shielded Gate technology. This process has been Max rDS(on) = 188 m a

June 2007BC847BSNPN Multi-chip General Purpose AmplifierThis device is designed for general purpose amplifier applications at collector currents to 200 mA.Sourced from Process 07. E2B2 C1 Dual NPN Signal TransisterNOTE: The pinouts are symmetrical; pin 1 and pin4 are interchangeable. Units inside the carrier can SC70-6 C2be of either orientation and will not affect the

BC817/BC818Switching and Amplifier Applications Suitable for AF-Driver stages and low power output stages3 Complement to BC807/BC8082SOT-2311. Base 2. Emitter 3. Collector NPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCES Collector Emitter Voltage : BC817 50 V: BC818 30 VVCEO Collector Em

May 2010FDMC86324N-Channel Power Trench MOSFET 80 V, 20 A, 23 mFeatures General Description Max rDS(on) = 23 m at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 37 m at VGS = 6 V, ID = 4 Abeen especially tailored to minimize the on-state resistance and Low Profile - 1 mm

July 2008FDMC8651N-Channel Power Trench MOSFET 30 V, 20 A, 6.1 mFeatures General Description Max rDS(on) = 6.1 m at VGS = 4.5 V, ID = 15 A This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in Max rDS(on) = 9.3 m at VGS = 2.5 V, ID = 12 AMOSFET construction, the various components of gate charge Low Profi

December 2010FDMC86102LN-Channel Power Trench MOSFET 100 V, 18 A, 23 mFeatures General Description Max rDS(on) = 23 m at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 34 m at VGS = 4.5 V, ID = 5.5 Abeen especially tailored to minimize the on-state resistance and Low Prof

KSC815Low Frequency Amplifier & High Frequency Oscillator Collector-Base Voltage : VCBO=60V Complement to KSA539 Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base)TO-9211. Emitter 2. Base 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Volta

July 2010FDMC86240N-Channel Power Trench MOSFET 150 V, 16 A, 51 mFeatures General Description Max rDS(on) = 51 m at VGS = 10 V, ID = 4.6 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 70 m at VGS = 6 V, ID = 3.9 Abeen especially tailored to minimize the on-state resistance and Low Profile -

May 2013FDC8602Dual N-Channel Shielded Gate PowerTrench MOSFET 100 V, 1.2 A, 350 mFeatures General Description Shielded Gate MOSFET TechnologyThis N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that Max rDS(on) = 350 m at VGS = 10 V, ID = 1.2 Aincorporates Shielded Gate technology. This process has been Max rDS(on) = 575

December 2014FDMC8010N-Channel PowerTrench MOSFET 30 V, 75 A, 1.3 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 1.3 m at VGS = 10 V, ID = 30 ASemiconductors advanced PowerTrench process that has Max rDS(on) = 1.8 m at VGS = 4.5 V, ID = 25 Abeen especially tailored to minimize the on-state resistance. This device is

October 2013FDPC8016SPowerTrench Power Clip 25V Asymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to Max rDS(on) = 3.8 m at VGS = 10 V, ID = 20 Aenable easy placement and routing of synchronous buck Max rDS(on) = 4.7 m at VGS

April 2011FDMC86102LZN-Channel Power Trench MOSFET 100 V, 22 A, 24 mFeatures General Description Max rDS(on) = 24 m at VGS = 10 V, ID = 6.5 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process Max rDS(on) = 35 m at VGS = 4.5 V, ID = 5.5 Athat has been special tailored to minimize the on-state HBM ESD prot

December 2010FDMC86106LZN-Channel Power Trench MOSFET 100 V, 7.5 A, 103 mFeatures General Description Max rDS(on) = 103 m at VGS = 10 V, ID = 3.3 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process Max rDS(on) = 153 m at VGS = 4.5 V, ID = 2.7 Athat has been special tailored to minimize the on-state HBM E

December 2010FDMC8622N-Channel Power Trench MOSFET 100 V, 16 A, 56 mFeatures General Description Max rDS(on) = 56 m at VGS = 10 V, ID = 4 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 100 m at VGS = 6 V, ID = 3 Abeen optimized for rDS(on), switching performance and High performance trench t

October 2013FDMC8327LN-Channel PowerTrench MOSFET 40 V, 14 A, 9.7 m Features General Description Max rDS(on) = 9.7 m at VGS = 10 V, ID = 12 AThis N-Channel MOSFET is produced using FairchildSemiconductors advanced Power Trench process that has Max rDS(on) = 12.5 m at VGS = 4.5 V, ID = 10 Abeen especially tailored to minimize the on-state resistance and Low Pro

BC847SE2B2C1C2SC70-6B1Mark: 1C pin #1 E1NOTE: The pinouts are symmetrical; pin 1 and pin4 are interchangeable. Units inside the carrier canbe of either orientation and will not affect thefunctionality of the device.NPN Multi-Chip General Purpose AmplifierThis device is designed for general purpose amplifier applications at collectorcurrents to 200 mA. Sourced from Pr

February 2007FDMC8554tmN-Channel Power Trench MOSFET 20V, 16.5A, 5mFeatures General Description Max rDS(on) = 5m at VGS = 10V, ID = 16.5AThis N-Channel MOSFET is a rugged gate version of Fairchild Semiconductors advanced Power Trench process. Max rDS(on) = 6.4m at VGS = 4.5V, ID = 14AIt has been optimized for switching performance and ultra low Low Profile

January 2015FDMC86570LET60N-Channel Shielded Gate PowerTrench MOSFET60 V, 87 A, 4.3 mFeatures General Description Extended TJ rating to 175C This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that Shielded Gate MOSFET Technologyincorporates Shielded Gate technology. This process has been Max rDS(on) = 4.3 m at VGS = 10

November 2013FDMC86116LZN-Channel Shielded Gate PowerTrench MOSFET 100 V, 7.5 A, 103 mFeatures General Description Shielded Gate MOSFET Technology This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench process Max rDS(on) = 103 m at VGS = 10 V, ID = 3.3 Athat incorporates Shielded Gate technology. This process has Max r

April 2011BC846 - BC850NPN Epitaxial Silicon TransistorFeatures3 Switching and Amplifier Applications Suitable for automatic insertion in thick and thin-film circuits Low Noise: BC849, BC8502 Complement to BC856 ... BC860SOT-2311. Base 2. Emitter 3. CollectorAbsolute Maximum Ratings* Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Coll

June 2012FDMC8588DCN-Channel PowerTrench MOSFET 25 V, 40 A, 5.7 mFeatures General Description Max rDS(on) = 5.7 m at VGS = 4.5 V, ID = 17 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node State-of-the-art switching performance ringing of DC/DC converters using either synchronous or Lower output capacita

Electrical Characteristics TJ = 25C unless otherwise notedSymbol Parameter Test Conditions Min Typ Max UnitsOff CharacteristicsBVDSS Drain to Source Breakdown Voltage ID = 250 A, VGS = 0V 30 V BVDSS Breakdown Voltage TemperatureID = 250 A, referenced to 25C 17 mV/C TJ CoefficientVDS = 24V, 1IDSS Zero Gate Voltage Drain Current AVGS = 0V, TJ = 125C 250IGSS Gate t

September 2010FDMC8882N-Channel Power Trench MOSFET 30 V, 16 A, 14.3 m Features General Description Max rDS(on) = 14.3 m at VGS = 10 V, ID = 10.5 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 22.5 m at VGS = 4.5 V, ID = 8.3 Abeen especially tailored to minimize the on-state resistance. This Hi

BC857SE2B2C1C2SC70-6B1Mark: 3C pin #1 E1NOTE: The pinouts are symmetrical; pin 1 and pin4 are interchangeable. Units inside the carrier canbe of either orientation and will not affect thefunctionality of the device.PNP Multi-Chip General Purpose AmplifierThis device is designed for general purpose amplifier applications at collectorcurrents to 200 mA. Sourced from Pr

April 2011FDMC8015LN-Channel Power Trench MOSFET 40 V, 18 A, 26 mFeatures General Description Max rDS(on) = 26 m at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench process that has Max rDS(on) = 36 m at VGS = 4.5 V, ID = 6 Abeen especially tailored to minimize the on-state resistance and Low Profile - 1 m

January 2015FDMC86340ET80N-Channel Shielded Gate Power Trench MOSFET80 V, 68 A, 6.5 mFeatures General Description Extended TJ rating to 175C This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that Shielded Gate MOSFET Technologyincorporates Shielded Gate technology. This process has been Max rDS(on) = 6.5 m at VGS = 10

June 2009FDMC8200Dual N-Channel PowerTrench MOSFET 30 V, 9.5 m and 20 mFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual Power33 (3mm x 3mm MLP) package. The switch node Max rDS(on) = 20 m at VGS = 10 V, ID = 6 Ahas been internally connected to enable easy placement and Max rDS(on) = 32 m at VGS = 4.5 V,

September 2012FDMC86248N-Channel Power Trench MOSFET 150 V, 13 A, 90 mFeatures General Description Max rDS(on) = 90 m at VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 125 m at VGS = 6 V, ID = 2.9 Abeen especially tailored to minimize the on-state resistance and Advance

January 2010D45C8PNP Power Amplifier Sourced from process 5P.TO-22011. Base 2. Collector 3. EmitterAbsolute Maximum Ratings TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage -60 VIC Collector Current - Continuous -4.0 ATJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 CElectrical Characteristics TA=25C

December 2010FDMC8878N-Channel Power Trench MOSFET 30V, 16.5A, 14m Features General Description Max rDS(on) = 14m at VGS = 10V, ID = 9.6AThis N-Channel MOSFET is a rugged gate version of Fairchild Semiconductors advanced Power Trench Max rDS(on) = 17m at VGS = 4.5V, ID = 8.7Aprocess. It has been optimized for power management Low Profile - 0.8 mm max in MLP 3.3X3.

June 2013FDMC8360LN-Channel Shielded Gate Power Trench MOSFET 40 V, 80 A, 2.1 mFeatures General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that Max rDS(on) = 2.1 m at VGS = 10 V, ID = 27 Aincorporates Shielded Gate technology. This process has been Max rDS(on) = 3.1 m

July 2009FDMC86102N-Channel Power Trench MOSFET 100 V, 20 A, 24 mFeatures General Description Max rDS(on) = 24 m at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 38 m at VGS = 6 V, ID = 5 Abeen especially tailored to minimize the on-state resistance and Low Profile -

June 2010FDC8601N-Channel Power Trench MOSFET 100 V, 2.7 A, 109 mFeatures General Description Max rDS(on) = 109 m at VGS = 10 V, ID = 2.7 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 176 m at VGS = 6 V, ID = 2.1 Abeen optimized for rDS(on), switching performance and High performance trench

January 2015FDMC86160ET100N-Channel Shielded Gate PowerTrench MOSFET100 V, 43 A, 14 mFeatures General Description Extended TJ rating to 175C This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that Shielded Gate MOSFET Technologyincorporates Shielded Gate technology. This process has been Max rDS(on) = 14 m at VGS = 10 V,

February 2013FDMC8321LN-Channel Power Trench MOSFET 40 V, 49 A, 2.5 mFeatures General Description Max rDS(on) = 2.5 m at VGS = 10 V, ID = 22 AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 4.1 m at VGS = 4.5 V, ID = 18 Aringing of DC/DC converters using either synchronous or Advanced

August 2006BC856- BC860tmPNP Epitaxial Silicon TransistorFeatures Switching and Amplifier Applications Suitable for automatic insertion in thick and thin-film circuits3 Low Noise: BC859, BC860 Complement to BC846 ... BC850 2SOT-2311. Base 2. Emitter 3. CollectorAbsolute Maximum Ratings* Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO

April 2014FDPC8014SPowerTrench Power Clip25V Asymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to Max rDS(on) = 3.8 m at VGS = 10 V, ID = 20 Aenable easy placement and routing of synchronous buck Max rDS(on) = 4.7 m at VGS = 4

December 2012FDMC86260N-Channel Power Trench MOSFET 150 V, 16 A, 34 mFeatures General Description Max rDS(on) = 34 m at VGS = 10 V, ID = 5.4 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 44 m at VGS = 6 V, ID = 4.8 Abeen especially tailored to minimize the on-state resistance and High perf

June 2014FDMC8854N-Channel Power Trench MOSFET 30V, 15A, 5.7mFeatures General Description Max rDS(on) = 5.7m at VGS = 10V, ID = 15AThis N-Channel MOSFET is a rugged gate version of Fairchild Semiconductors advanced Power Trench Max rDS(on) = 7.6m at VGS = 4.5V, ID = 13Aprocess. It has been optimized for power management Low Profile - 1mm max in Power 33applica

January 2012FDC8878N-Channel PowerTrench MOSFET 30 V, 8.0 A, 16 mFeatures General Description Max rDS(on) = 16 m at VGS = 10 V, ID = 8.0 AThis N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 18 m at VGS = 4.5 V, ID = 7.5 Abeen optimized for rDS(on), switching performance. High performance trench t

January 2014FDMC86340N-Channel Shielded Gate Power Trench MOSFET80 V, 48 A, 6.5 mFeatures General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that Max rDS(on) = 6.5 m at VGS = 10 V, ID = 14 Aincorporates Shielded Gate technology. This process has been Max rDS(on) = 8.5 m

July 2009FDMC8678StmN-Channel Power Trench SyncFETTM 30V, 18A, 5.2mFeatures General Description Max rDS(on) = 5.2m at VGS = 10V, ID = 15A The FDMC8678S has been designed to minimize losses in power conversion applications. Advancements in both silicon Max rDS(on) = 8.7m at VGS = 4.5V, ID = 12Aand package technologies have been combined to offer the Advanced Pack

October 2010FDMC86244N-Channel Power Trench MOSFET 150 V, 9.4 A, 134 mFeatures General Description Max rDS(on) = 134 m at VGS = 10 V, ID = 2.8 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 186 m at VGS = 6 V, ID = 2.4 Abeen especially tailored to minimize the on-state resistance and Low Pr

June 2014FDMC86139PP-Channel PowerTrench MOSFET -100 V, -15 A, 67 mFeatures General Description Max rDS(on) = 67 m at VGS = -10 V, ID = -4.4 A This P-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench technology. This Max rDS(on) = 89 m at VGS = -6 V, ID = -3.6 Avery high density process is especially tailored to minimize Very low RDS-

November 2014FDMC8588 N-Channel PowerTrench MOSFET 25 V, 40 A, 5.7 mFeatures General Description Max rDS(on) = 5.7 m at VGS = 4.5 V, ID = 16.5 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node State-of-the-art switching performance ringing of DC/DC converters using either synchronous or Lower output cap

October 2013FDMC8032LDual N-Channel PowerTrench MOSFET 40 V, 7 A, 20 mFeatures General Description Max rDS(on) = 20 m at VGS = 10 V, ID = 7 AThis device includes two 40V N-Channel MOSFETs in a dual Power 33 (3 mm X 3 mm MLP) package. The package is Max rDS(on) = 27 m at VGS = 4.5 V, ID = 6 Aenhanced for exceptional thermal performance. Low Inductance Packaging Short

August 2011FDMC86520LN-Channel Power Trench MOSFET 60 V, 22 A, 7.9 mFeatures General Description Max rDS(on) = 7.9 m at VGS = 10 V, ID = 13.5 AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 11.7 m at VGS = 4.5 V, ID = 11.5 Aringing of DC/DC converters using either synchronous or Low P

October 2014FDPC8012SPowerTrench Power Clip 25V Asymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to Max rDS(on) = 7.0 m at VGS = 4.5 V, ID = 12 Aenable easy placement and routing of synchronous buck Q2: N-Channelconverters. Th

March 2011FDMC8200SDual N-Channel PowerTrench MOSFET 30 V, 10 m, 20 m Features General DescriptionThis device includes two specialized N-Channel MOSFETs in a Q1: N-Channeldue power33(3mm X 3mm MLP) package. The switch node has Max rDS(on) = 20 m at VGS = 10 V, ID = 6 Abeen internally connected to enable easy placement and routing of synchronous buck converters. The

October 2010FDMC8884N-Channel Power Trench MOSFET 30 V, 15 A, 19 mFeatures General Description Max rDS(on) = 19 m at VGS = 10 V, ID = 9.0 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 30 m at VGS = 4.5 V, ID = 7.2 Abeen especially tailored to minimize the on-state resistance. This High per

November 2006BC817/BC818tmNPN Epitaxial Silicon TransistorFeatures Switching and Amplifier Applications Suitable for AF-Driver stages and low power output stages3 Complement to BC807/ BC808 2SOT-2311. Base 2. Emitter 3. CollectorAbsolute Maximum Ratings* Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage : BC817 50

January 2008FDC855NtmSingle N-Channel, Logic Level, PowerTrench MOSFET 30V, 6.1A, 27mFeatures General Description Max rDS(on) = 27m at VGS = 10V, ID = 6.1A This N-Channel Logic Level MOSFET is an efficient solution for low voltage and battery powered applications. Utilizing Fairchild Max rDS(on) = 36m at VGS = 4.5V, ID = 5.3ASemiconductors advanced PowerTrench

BC807/BC808Switching and Amplifier Applications Suitable for AF-Driver stages and low power output stages3 Complement to BC817/BC8182SOT-2311. Base 2. Emitter 3. Collector PNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCES Collector-Emitter Voltage : BC807 -50 V: BC808 -30 VVCEO Collector-

September 2012FDMC86520DCN-Channel Dual CoolTM PowerTrench MOSFET 60 V, 40 A, 6.3 mFeatures General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 6.3 m at VGS = 10 V, ID = 17 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 8.7 m

December 2014FDMC8321LDCN-Channel Power Trench MOSFET40 V, 108 A, 2.5 mFeatures General Description Dual CoolTM Top Side Cooling PQFN packageThis N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 2.5 m at VGS = 10 V, ID = 27 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 4.1 m at VGS = 4.

January 2015FDMC86260ET150N-Channel Power Trench MOSFET150 V, 25 A, 34 mFeatures General Description Extended TJ rating to 175C This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 34 m at VGS = 10 V, ID = 5.4 Abeen especially tailored to minimize the on-state resistance and Max rDS(on) = 44 m at

January 2015FDMC8010ET30N-Channel PowerTrench MOSFET30 V, 174 A, 1.3 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Extended TJ rating to 175CSemiconductors advanced PowerTrench process that has Max rDS(on) = 1.3 m at VGS = 10 V, ID = 30 Abeen especially tailored to minimize the on-state resistance. This device is well suited for

December 2007FDMC8676tmN-Channel PowerTrench MOSFET 30V, 18A, 5.9mFeatures General Description Max rDS(on) = 5.9m at VGS = 10V, ID = 14.7A This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in Max rDS(on) = 9.3m at VGS = 4.5V, ID = 11.5AMOSFET construction, the various components of gate charge Low Prof

July 2013FDMC89521LDual N-Channel PowerTrench MOSFET 60 V, 8.2 A, 17 mFeatures General DescriptionThis device includes two 60 V N-Channel MOSFETs in a dual Max rDS(on) = 17 m at VGS = 10 V, ID = 8.2 APower 33 (3 mm X 3 mm MLP) package. The package is Max rDS(on) = 27 m at VGS = 4.5 V, ID = 6.7 Aenhanced for exceptional thermal performance. Termination is Lead-free

October 2014FDPC8011SPowerTrench Power Clip 25V Asymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to Max rDS(on) = 7.3 m at VGS = 4.5 V, ID = 12 Aenable easy placement and routing of synchronous buck Q2: N-Channelconverters. Th

February 2014FDMC86259PP-Channel PowerTrench MOSFET -150 V, -13 A, 107 m Features General Description Max rDS(on) = 107 m at VGS = -10 V, ID = -3 A This P-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has Max rDS(on) = 137 m at VGS = -6 V, ID = -2.7 Abeen especially tailored to minimize the on-state resistance and Very l

June 2014FDMC86261PP-Channel PowerTrench MOSFET -150 V, -9 A, 160 mFeatures General Description Max rDS(on) = 160 m at VGS = -10 V, ID = -2.4 A This P-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench technology. This Max rDS(on) = 185 m at VGS = -6 V, ID = -2.2 Avery high density process is especially tailored to minimize Very low RD

April 2015FDMC86262PP-Channel PowerTrench MOSFET-150 V, -2 A, 307 mFeatures General DescriptionThis P-Channel MOSFET is produced using Fairchild Max rDS(on) = 307 m at VGS = -10 V, ID = -2 ASemiconductors advanced PowerTrench technology. This Max rDS(on) = 356 m at VGS = -6 V, ID = -1.8 Avery high density process is especially tailored to minimize on-state resis

June 2014FDMC86320N-Channel Power Trench MOSFET 80 V, 22 A, 11.7 mFeatures General Description Max rDS(on) = 11.7 m at VGS = 10 V, ID = 10.7 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 16 m at VGS = 8 V, ID = 8.5 Aringing of DC/DC converters using either synchronous or MSL1 robust

May 2013FDMC86570LN-Channel Shielded Gate PowerTrench MOSFET 60 V, 56 A, 4.3 mFeatures Shielded Gate MOSFET TechnologyGeneral Description Max rDS(on) = 4.3 m at VGS = 10 V, ID = 18 AThis N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that Max rDS(on) = 6.5 m at VGS = 4.5 V, ID = 15 Aincorporates Shielded Gate technolo

January 2010D44C8NPN Power Amplifier Sourced from process 4P.TO-22011. Base 2. Collector 3. EmitterAbsolute Maximum Ratings TA=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 60 VIC Collector Current - Continuous 4.0 ATJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 CElectrical Characteristics TA=25C unle

May 2014FDMC86265PP-Channel PowerTrench MOSFET -150 V, -1 A, 1.2 Features General Description Max rDS(on) = 1.2 at VGS = -10 V, ID = -1 A This P-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that Max rDS(on) = 1.4 at VGS = -6 V, ID = -0.9 Ahas been optimized for the on-state resistance and yet maintain Very low RDS-on mid

October 2014FDPC8013SPowerTrench Power Clip 30 V Asymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to Max rDS(on) = 9.6 m at VGS = 4.5 V, ID = 10 Aenable easy placement and routing of synchronous buck Q2: N-Channelconverters. T

BC847xQB series45 V, 100 mA NPN general-purpose transistorRev. 1 24 January 2020 Product data sheet1. General descriptionNPN general-purpose transistor in an ultra small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks.Table 1. Product overviewType number Package PNP complement:Nexperia JEDECBC847AQB SOT8015 MO-340BA BC85

BC816 series80 V, 500 mA NPN general-purpose transistorsRev. 2 5 November 2019 Product data sheet1. General descriptionNPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD)plastic package.Table 1. Product overviewType number Package PNP complement:Nexperia JEDECBC816-16 SOT23 TO-236AB BC806-16BC816-25 SOT23 TO-236AB BC806-252. Feature

BC857XQA series45 V, 100 mA PNP general-purpose transistorsRev. 1 26 August 2015 Product data sheet1. Product profile1.1 General descriptionPNP general-purpose transistors in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.Table 1. Product overviewType number Package NPN complementNexperia JEITA

BC817-25QA; BC817-40QA45 V, 500 mA NPN general-purpose transistorsRev. 1 3 September 2013 Product data sheet1. Product profile1.1 General description500 mA NPN general-purpose transistors in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.Table 1. Product overviewType number Package PNP compleme

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PMC85XP30 V P-channel MOSFET with pre-biased NPN transistor15 May 2013 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in Trench MOSFETtechnology and NPN Resistor-Equipped Transistor (RET) together in a leadless mediumpower DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.2. Features and benefits Trench MOSFET t

BC817RA45 V, 500 mA NPN/NPN general-purpose double transistors14 September 2018 Product data sheet1. General descriptionNPN/NPN general-purpose double transistors in a leadless ultra small DFN1412-6 (SOT1268)Surface-Mounted Device (SMD) plastic package.PNP/PNP complement: BC807RANPN/PNP complement: BC817RAPN2. Features and benefits Reduces component count Reduces pick

BC807DSPNP/PNP general purpose double transistors3 May 2019 Product data sheet1. General descriptionPNP/PNP general-purpose double transistors in an SOT457 (SC-74) plastic package.NPN/NPN complement: BC817DSNPN/PNP complement: BC817DPN2. Features and benefits Reduces component count Reduces pick and place costs AEC-Q101 qualified3. Applications General purpos

BC846BS65 V, 100 mA NPN/NPN general-purpose transistorRev. 01 24 August 2009 Product data sheet1. Product profile1.1 General descriptionNPN/NPN general-purpose transistor pair in a very small Surface-Mounted Device (SMD)plastic package.Table 1. Product overviewType number Package PNP/PNP NPN/PNPcomplement complementNXP JEITABC846BS SOT363 SC-88 BC856BS BC846BPN1.2 Fe

BC846BMB65 V, 100 mA NPN general-purpose transistorRev. 1 15 May 2012 Product data sheet1. Product profile1.1 General descriptionNPN general-purpose transistor in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.1.2 Features and benefits Leadless ultra small SMD plastic package Low package height of 0.37 mm Power dissipati

BC807-25QA; BC807-40QA45 V, 500 mA PNP general-purpose transistorsRev. 1 30 August 2013 Product data sheet1. Product profile1.1 General description500 mA PNP general-purpose transistors in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.Table 1. Product overviewType number Package NPN complement

BC847XQA series45 V, 100 mA NPN general-purpose transistorsRev. 1 26 August 2015 Product data sheet1. Product profile1.1 General descriptionNPN general-purpose transistors in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.Table 1. Product overviewType number Package PNP complementNexperia JEITA

BC807H series45 V, 500 mA PNP general-purpose transistorsRev. 1 5 March 2019 Product data sheet1. Product profile1.1. General descriptionPNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD)plastic package.Table 1. Product overviewType number Package NPN comlementNexperia JEDECBC807-16H SOT23 TO-236AB BC817K-16HBC807-25H BC817K-25HB

BC847 series45 V, 100 mA NPN general-purpose transistorsRev. 8 20 August 2012 Product data sheet1. Product profile1.1 General descriptionNPN general-purpose transistors in Surface-Mounted Device (SMD) plastic packages.Table 1. Product overviewType number[1] Package PNP complementNXP JEITA JEDECBC847 SOT23 - TO-236AB BC857BC847A BC857ABC847B BC857BBC847C BC857CBC847

BC847BS45 V, 100 mA NPN/NPN general-purpose transistorRev. 03 18 February 2009 Product data sheet1. Product profile1.1 General descriptionNPN/NPN general-purpose transistor pair in a very small SOT363 (SC-88)Surface-Mounted Device (SMD) plastic package.PNP/PNP complement: BC857BS.1.2 Features Low collector capacitance Low collector-emitter saturation voltage Closely ma

BC857xMB series45 V, 100 mA PNP general-purpose transistorsRev. 1 21 February 2012 Product data sheet1. Product profile1.1 General descriptionPNP general-purpose transistors in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package NPN complementNXP JEITA JEDECBC857AMB SOT883B - - BC847AMBBC857BMB SOT883

BC856BM60 V, 100 mA PNP general-purpose transistor19 August 2015 Product data sheet1. General descriptionPNP general-purpose transistor in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package.NPN complement: BC846BM.2. Features and benefits Leadless ultra small SMD plastic package Power dissipation comparable to SOT23 AEC-Q101 quali

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

BC846xW series65 V, 500 mA NPN general-purpose transistorsRev. 10 27 January 2022 Product data sheet1. General descriptionNPN general-purpose transistors in a very small SOT323 (SC-70) Surface-Mounted Device (SMD)plastic package.Table 1. Product overviewType number Package PNP complementNexperia JEDECBC846W SOT323 SC-70 BC856WBC846AW BC856AWBC846BW BC856BW2. Features

BC857xMB series45 V, 100 mA PNP general-purpose transistorsRev. 1 21 February 2012 Product data sheet1. Product profile1.1 General descriptionPNP general-purpose transistors in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package NPN complementNexperia JEITA JEDECBC857AMB SOT883B - - BC847AMBBC857BMB S

BC847xMB series45 V, 100 mA NPN general-purpose transistorsRev. 1 5 March 2012 Product data sheet1. Product profile1.1 General descriptionNPN general-purpose transistors in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package PNP complementNXP JEITA JEDECBC847AMB SOT883B - - BC857AMBBC847BMB SOT883B -

BC847QAPN45 V, 100 mA NPN/PNP general-purpose transistor8 July 2015 Product data sheet1. General descriptionNPN/PNP general-purpose transistor in a leadless ultra small DFN1010B-6 (SOT1216)Surface-Mounted Device (SMD) plastic package.2. Features and benefits Reduces component count Reduces pick and place costs AEC-Q101 qualified Low package height of 0.37 mm3.

BC817DPNNPN/PNP general purpose transistor27 November 2019 Product data sheet1. General descriptionNPN/PNP general-purpose double transistors in an SOT457 (SC-74) plastic package.2. Features and benefits Reduces component count Reduces pick and place costs AEC-Q101 qualified3. Applications General purpose switching and amplification4. Quick reference dataTabl

BC857xMB series45 V, 100 mA PNP general-purpose transistorsRev. 1 21 February 2012 Product data sheet1. Product profile1.1 General descriptionPNP general-purpose transistors in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package NPN complementNXP JEITA JEDECBC857AMB SOT883B - - BC847AMBBC857BMB SOT883

BC847DS45 V, 100 mA NPN/NPN general-purpose transistorRev. 01 25 August 2009 Product data sheet1. Product profile1.1 General descriptionNPN/NPN general-purpose transistor pair in a small SOT457 (SC-74) Surface-MountedDevice (SMD) plastic package.1.2 Features Low collector capacitance Low collector-emitter saturation voltage Closely matched current gain Reduces number o

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

BC846DS65 V, 100 mA NPN/NPN general-purpose transistorRev. 01 17 July 2009 Product data sheet1. Product profile1.1 General descriptionNPN/NPN general-purpose transistor pair in a small SOT457 (SC-74) Surface-MountedDevice (SMD) plastic package.1.2 Features Low collector capacitance Low collector-emitter saturation voltage Closely matched current gain Reduces number of

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

BC807RA45 V, 500 mA PNP/PNP general-purpose double transistors14 September 2018 Product data sheet1. General descriptionPNP/PNP general-purpose double transistors in a leadless ultra small DFN1412-6 (SOT1268)Surface-Mounted Device (SMD) plastic package.NPN/NPN complement: BC817RANPN/PNP complement: BC817RAPN2. Features and benefits Reduces component count Reduces pick

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

BCP68; BC868; BC68PA20 V, 2 A NPN medium power transistorsRev. 8 18 October 2011 Product data sheet1. Product profile1.1 General descriptionNPN medium power transistor series in Surface-Mounted Device (SMD) plastic packages.Table 1. Product overviewType number[1] Package PNP complementNexperia JEITA JEDECBCP68 SOT223 SC-73 - BCP69BC868 SOT89 SC-62 TO-243 BC869BC68PA SO

BC848 series30 V, 100 mA NPN general-purpose transistorsRev. 07 17 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages.Table 1. Product overviewType number Package PNP complementNXP JEITA JEDECBC848B SOT23 - TO-236AB BC858BBC848W SOT323 SC-70 - BC858W1.2 Features G

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

BC807L; BC807LW45 V, 500 mA PNP general-purpose transistorsRev. 1 5 January 2018 Product data sheet1 Product profile1.1 General descriptionPNP general-purpose transistors in a small SOT23 (TO-236AB) or SOT323 (SC-70)Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number PackageNexperia JEITA JEDECBC807-16L SOT23 - TO-236ABBC807-25LBC807-40L

BC807 series45 V, 500 mA PNP general-purpose transistorsRev. 7 15 June 2018 Product data sheet1 Product profile1.1 General descriptionPNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device(SMD) plastic package.Table 1. Product overviewType number Package NPNcomplementNexperia JEDEC JEITABC807 SOT23 TO-236AB - BC817BC807-16 BC817-16BC807-

BC847xMB series45 V, 100 mA NPN general-purpose transistorsRev. 1 5 March 2012 Product data sheet1. Product profile1.1 General descriptionNPN general-purpose transistors in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package PNP complementNexperia JEITA JEDECBC847AMB SOT883B - - BC857AMBBC847BMB SOT88

BC847RAPN45 V, 100 mA NPN/PNP general-purpose double transistors14 September 2018 Product data sheet1. General descriptionNPN/PNP general-purpose double transistors in a leadless ultra small DFN1412-6 (SOT1268)Surface-Mounted Device (SMD) plastic package.NPN/NPN complement: BC847RAPNP/PNP complement: BC857RA2. Features and benefits Reduces component count Reduces pick

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088BC817NPN general purpose transistor1999 Jun 01Product specificationSupersedes data of 1997 Mar 12Philips Semiconductors Product specificationNPN general purpose transistor BC817FEATURES PINNING High current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 base2 emitterAPPLICATIONS3 collector

BC847BVNNPN/PNP general purpose transistor20 May 2019 Product data sheet1. General descriptionNPN/PNP transistor pair in a SOT666 plastic package.2. Features and benefits 300 mW total power dissipation Very small 1.6 mm x 1.2 mm ultra thin package Excellent coplanarity due to straight leads Replaces two SC-75/SC-89 packaged transistors on same PCB area Reduced

BC857QAS45 V, 100 mA PNP/PNP general-purpose transistor8 July 2015 Product data sheet1. General descriptionPNP/PNP general-purpose transistor in a leadless ultra small DFN1010B-6 (SOT1216)Surface-Mounted Device (SMD) plastic package.NPN/NPN complement: BC847QAS.NPN/PNP complement: BC847QAPN.2. Features and benefits Reduces component count Reduces pick and place costs

BC817-25QA; BC817-40QA45 V, 500 mA NPN general-purpose transistorsRev. 1 3 September 2013 Product data sheet1. Product profile1.1 General description500 mA NPN general-purpose transistors in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.Table 1. Product overviewType number Package PNP compleme

BC857RA45 V, 100 mA PNP/PNP general-purpose double transistors14 September 2018 Product data sheet1. General descriptionPNP/PNP general-purpose double transistors in a leadless ultra small DFN1412-6 (SOT1268)Surface-Mounted Device (SMD) plastic package.NPN/NPN complement: BC847RANPN/PNP complement: BC847RAPN2. Features and benefits Reduces component count Reduces pick

BC847xMB series45 V, 100 mA NPN general-purpose transistorsRev. 1 5 March 2012 Product data sheet1. Product profile1.1 General descriptionNPN general-purpose transistors in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package PNP complementNXP JEITA JEDECBC847AMB SOT883B - - BC857AMBBC847BMB SOT883B -

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D102BC856W; BC857W; BC858WPNP general purpose transistorsProduct data sheet 2002 Feb 04Supersedes data of 1999 Apr 12NXP Semiconductors Product data sheetBC856W; BC857W; PNP general purpose transistorsBC858WFEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 65 V).1 base2 emitter

BC847QAS45 V, 100 mA NPN/NPN general-purpose transistor8 July 2015 Product data sheet1. General descriptionNPN/NPN general-purpose transistor in a leadless ultra small DFN1010B-6 (SOT1216)Surface-Mounted Device (SMD) plastic package.PNP/PNP complement: BC857QAS.NPN/PNP complement: BC847QAPN.2. Features and benefits Reduces component count Reduces pick and place costs

BC807K series45 V, 500 mA PNP general-purpose transistorsRev. 2 24 April 2018 Product data sheet1 Product profile1.1 General descriptionPNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device(SMD) plastic package.Table 1. Product overviewType number Package NPN complementNexperia JEDECBC807K-16 SOT23 TO-236AB BC817K-16BC807K-25 BC817K-25BC8

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D302BC817DSNPN general purpose double transistorProduct data sheet 2002 Nov 22Supersedes data of 2002 Aug 09NXP Semiconductors Product data sheetNPN general purpose double transistor BC817DSFEATURES QUICK REFERENCE DATA High current (500 mA)SYMBOL PARAMETER MAX. UNIT 600 mW total power dissipationVCEO colle

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

BCP69; BC869; BC69PA20 V, 2 A PNP medium power transistorsRev. 7 12 October 2011 Product data sheet1. Product profile1.1 General descriptionPNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages.Table 1. Product overviewType number[1] Package NPN complementNexperia JEITA JEDECBCP69 SOT223 SC-73 - BCP68BC869 SOT89 SC-62 TO-243 BC868BC69PA SO

BC856BS65 V, 100 mA PNP/PNP general-purpose transistorRev. 01 11 August 2009 Product data sheet1. Product profile1.1 General descriptionPNP/PNP general-purpose transistor pair in a very small Surface-Mounted Device (SMD)plastic package.Table 1. Product overviewType number Package NPN/NPN NPN/PNPcomplement complementNexperia JEITABC856BS SOT363 SC-88 BC846BS BC846BPN1

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

BC807-25QA; BC807-40QA45 V, 500 mA PNP general-purpose transistorsRev. 1 30 August 2013 Product data sheet1. Product profile1.1 General description500 mA PNP general-purpose transistors in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.Table 1. Product overviewType number Package NPN complement

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

BC846BM65 V, 100 mA NPN general-purpose transistor20 August 2015 Product data sheet1. General descriptionNPN general-purpose transistor in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package.PNP complement: BC856BM.2. Features and benefits Leadless ultra small SMD plastic package Power dissipation comparable to SOT23 AEC-Q101 quali

DISCRETE SEMICONDUCTORS DATA SHEETM3D883BOTTOM VIEWBC857M seriesPNP general purpose transistorsProduct data sheet 2004 Mar 10Supersedes data of 2003 Jul 15NXP Semiconductors Product data sheetPNP general purpose transistors BC857M seriesFEATURES QUICK REFERENCE DATA Leadless ultra small plastic package SYMBOL PARAMETER MAX. UNIT(1 mm 0.6 mm 0.5 mm)VCEO col

BC847xW-Q series45 V, 100 mA NPN general-purpose transistorsRev. 2 24 June 2021 Product data sheet1. General descriptionNPN general-purpose transistors in a very small SOT323 (SC-70) Surface-Mounted Device (SMD)plastic package.Table 1. Product overviewType number[1] Package PNP complementNexperia JEITABC847W-Q SOT323 SC-70 BC857W-QBC847AW-Q BC857AW-QBC847BW-Q BC857BW-Q

BC817-25QA; BC817-40QA45 V, 500 mA NPN general-purpose transistorsRev. 1 3 September 2013 Product data sheet1. Product profile1.1 General description500 mA NPN general-purpose transistors in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.Table 1. Product overviewType number Package PNP compleme

BC807-25QA; BC807-40QA45 V, 500 mA PNP general-purpose transistorsRev. 1 30 August 2013 Product data sheet1. Product profile1.1 General description500 mA PNP general-purpose transistors in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.Table 1. Product overviewType number Package NPN complement

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

DISCRETE SEMICONDUCTORS DATA SHEETM3D883BOTTOM VIEWBC857M seriesPNP general purpose transistorsProduct data sheet 2004 Mar 10Supersedes data of 2003 Jul 15NXP Semiconductors Product data sheetPNP general purpose transistors BC857M seriesFEATURES QUICK REFERENCE DATA Leadless ultra small plastic package SYMBOL PARAMETER MAX. UNIT(1 mm 0.6 mm 0.5 mm)VCEO col

BC846 series65 V, 100 mA NPN general-purpose transistorsRev. 9 25 September 2012 Product data sheet1. Product profile1.1 General descriptionNPN general-purpose transistors in Surface-Mounted Device (SMD) plastic packages.Table 1. Product overviewType number[1] Package PNP complementNXP JEITA JEDECBC846 SOT23 - TO-236AB BC856BC846W SOT323 SC-70 - BC856WBC846T SOT416 SC-

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

BC817W series45 V, 500 mA NPN general-purpose transistorsRev. 7 11 June 2018 Product data sheet1 Product profile1.1 General descriptionNPN general-purpose transistors in a very small SOT323 (SC-70) Surface-MountedDevice (SMD) plastic package.Table 1. Product overviewType number Package PNP complementNexperia JEDEC JEITABC817W SOT323 - SC-70 BC807WBC817-16W BC807-16WB

BC817 series45 V, 500 mA NPN general-purpose transistorsRev. 7 18 June 2018 Product data sheet1 Product profile1.1 General descriptionNPN general-purpose transistors in a small SOT23 Surface-Mounted Device (SMD)plastic package.Table 1. Product overviewType number Package PNP complementNexperia JEDEC JEITABC817 SOT23 TO-236AB - BC807BC817-16 BC807-16BC817-25 BC807-25

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

BC817KH series45 V, 500 mA NPN general-purpose transistorsRev. 1 15 December 2017 Product data sheet1 Product profile1.1 General descriptionNPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device(SMD) plastic package.Table 1. Product overviewType number Package PNP complementNexperia JEDECBC817K-16H SOT23 TO-236AB -BC817K-25H -BC817K-40H -

BC816W series80 V, 500 mA NPN general-purpose transistorsRev. 2 27 November 2019 Product data sheet1. General descriptionNPN general-purpose transistors in a very small SOT323 (SC-70) Surface-Mounted Device (SMD)plastic package.Table 1. Product overviewType number Package PNP complement:Nexperia JEITABC816-16W SOT323 SC-70 BC806-16WBC816-25W BC806-25W2. Features and be

BC847 series45 V, 100 mA NPN general-purpose transistorsRev. 8 20 August 2012 Product data sheet1. Product profile1.1 General descriptionNPN general-purpose transistors in Surface-Mounted Device (SMD) plastic packages.Table 1. Product overviewType number[1] Package PNP complementNXP JEITA JEDECBC847 SOT23 - TO-236AB BC857BC847A BC857ABC847B BC857BBC847C BC857CBC847

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

BC817K series45 V, 500 mA NPN general-purpose transistorsRev. 2 6 March 2018 Product data sheet1 Product profile1.1 General descriptionNPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device(SMD) plastic package.Table 1. Product overviewType number Package PNP complementNexperia JEDECBC817K-16 SOT23 TO-236AB BC807K-16BC817K-25 BC807K-25BC81

BC806 series80 V, 500 mA PNP general-purpose transistorsRev. 2 5 November 2019 Product data sheet1. General descriptionPNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD)plastic package.Table 1. Product overviewType number Package NPN complement:Nexperia JEDECBC806-16 SOT23 TO-236AB BC816-16BC806-25 SOT23 TO-236AB BC816-252. Feature

BC856; BC857; BC85865 V, 100 mA PNP general-purpose transistorsRev. 7 16 April 2018 Product data sheet1 Product profile1.1 General descriptionPNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device(SMD) plastic package.Table 1. Product overviewType number Package NPN complementNexperia JEDECBC856 SOT23 TO-236AB BC846BC856A BC846ABC856B BC84

BC847RA45 V, 100 mA NPN/NPN general-purpose double transistors14 September 2018 Product data sheet1. General descriptionNPN/NPN general-purpose double transistors in a leadless ultra small DFN1412-6 (SOT1268)Surface-Mounted Device (SMD) plastic package.PNP/PNP complement: BC857RANPN/PNP complement: BC847RAPN2. Features and benefits Reduces component count Reduces pick

BC847 series45 V, 100 mA NPN general-purpose transistorsRev. 12 24 October 2019 Product data sheet1. Product profile1.1. General descriptionNPN general-purpose transistors in a small SOT23 (TO-236AB), very small SOT323 (SC-70) orultra small SOT883 (DFN1006-3) Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number[1] Package PNP complementNexperia

DISCRETE SEMICONDUCTORS DATA SHEETBC856; BC857; BC858PNP general purpose transistorsProduct data sheet 2004 Jan 16Supersedes data of 2003 Apr 09NXP Semiconductors Product data sheetPNP general purpose transistors BC856; BC857; BC858FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 65 V).1 base2 emitterAPPLICATIONS3 collector G

BC807W series45 V, 500 mA PNP general-purpose transistorsRev. 7 3 July 2018 Product data sheet1 Product profile1.1 General descriptionPNP general-purpose transistors in a very small SOT323 (SC-70) Surface-MountedDevice (SMD) plastic package.Table 1. Product overviewType number Package NPN complementNexperia JEDEC JEITABC807W SOT323 - SC-70 BC817WBC807-16W BC817-16WBC

BC847 series45 V, 100 mA NPN general-purpose transistorsRev. 8 20 August 2012 Product data sheet1. Product profile1.1 General descriptionNPN general-purpose transistors in Surface-Mounted Device (SMD) plastic packages.Table 1. Product overviewType number[1] Package PNP complementNXP JEITA JEDECBC847 SOT23 - TO-236AB BC857BC847A BC857ABC847B BC857BBC847C BC857CBC847

BC847BPN45 V, 100 mA NPN/PNP general-purpose transistorRev. 04 18 February 2009 Product data sheet1. Product profile1.1 General descriptionNPN/PNP general-purpose transistor pair in a very small SOT363 (SC-88)Surface-Mounted Device (SMD) plastic package.1.2 Features Low collector capacitance Low collector-emitter saturation voltage Closely matched current gain Reduces

BC806W series80 V, 500 mA PNP general-purpose transistorsRev. 2 27 November 2019 Product data sheet1. General descriptionPNP general-purpose transistors in a very small SOT323 (SC-70) Surface-Mounted Device (SMD)plastic package.Table 1. Product overviewType number Package NPN complement:Nexperia JEITABC806-16W SOT323 SC-70 BC816-16WBC806-25W SOT323 SC-70 BC816-25W2. Fe

PNP EPITAXIALBC856/857/858/859/860 SILICON TRANSISTORSWITCHING AND AMPLIFIER APPLICATIONSSOT-23 Sutable for automatic insertion in thick and thin-film circuits LOW NOISE: BC859, BC860 Complement to BC846 ... BC850ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO:BC856 -80 V:BC857/860 -50 V:BC858/859 -30 VCollecto

NPN EPITAXIALBC846/847/848/849/850 SILICON TRANSISTORSWITCHING AND AMPLIFIER APPLICATIONSSOT-23 Sutable for automatic insertion in thick and thin-film circuits LOW NOISE: BC849, BC850 Complement to BC856 ... BC860ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector Base Voltage VCBO:BC846 80 V:BC847/850 50 V:BC848/849 30 VCollector E

BC817/BC818 NPN EPITAXIAL SILICON TRANSISTORSOT-23SWITCHING AND AMPLIFIER APPLICATIONS Sutable for AF-Driver stages and low power output stages Complement to BC807/BC808ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector Emitter Voltage :BC817 VCES 50 V:BC818 30 VCollector Emitter Voltage :BC817 VCEO 45 V:BC818 25 VEmitter-Base Voltage VEB

BC807/BC808 PNP EPITAXIAL SILICON TRANSISTORSWITCHING AND AMPLIFIER APPLICATIONSSOT-23 Sutable for AF-Driver stages and low power output stages Complement to BC817/BC818ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector Emitter Voltage :BC807 VCES -50 V:BC808 -30 VCollector Emitter Voltage :BC807 VCEO -45 V:BC808 -25 VEmitter-Base Voltage

BC 856SPNP Silicon AF Transistor Array4 For AF input stages and driver applications5 High current gain6 Low collector-emitter saturation voltage Two ( galvanic) internal isolated Transistors with high matching in one package32VPS056041Type Marking Ordering Code Pin Configuration PackageBC 856S 3Ds Q62702-C2532 1/4=E1/E2 2/5=B1/B2 3/6=C2/C1 SOT-363Maxi

PNP Silicon AF Transistors BC 856W ... BC 860WFeatures For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 847W, BC 848W,BC 849W, BC 850W (NPN)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3BC 856 AW 3As Q62702-C2335 B E C SOT-323BC 856

BC 846SNPN Silicon AF Transistor Array4 For AF input stages and driver applications5 High current gain6 Low collector-emitter saturation voltage Two ( galvanic) internal isolated Transistors with high matching in one package32VPS056041Type Marking Ordering Code Pin Configuration PackageBC 846S 1Ds Q62702-C2529 1/4=E1/E2 2/5=B1/B2 3/6=C2/C1 SOT-363Maxi

BC 847SNPN Silicon AF Transistor Array For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated Transistors in one packageType Marking Ordering Code Pin Configuration PackageBC 847S 1Cs Q62702-2372 1/4=E1/E2 2/5=B1/B2 3/6=C2/C1 SOT-363Maximum RatingsParameter Symbol Values UnitCollec

BC 847PNNPN/PNP Silicon AF Transistor Array For AF input stages and driver applivations High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN/PNP Transistors in one packageTape loading orientationPIN ConfigurationNPN-Transistor 1 = E 2 = B 6 = C PNP-Transistor 4 = E 5 = B 3 = C Type Marking Ordering Code PackageBC 847

BC 807-16WPNP Silicon AF Transistor For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC817W, BC818W (NPN)Type Marking Ordering Code Pin Configuration PackageBC 807-16W 5As Q62702-C2325 1 = B 2 = E 3 = C SOT-323BC 807-25W 5Bs Q62702-C2326 1 = B 2 = E 3 = C SOT-323BC 807-40W 5Cs Q6

BC 857SPNP Silicon AF Transistor Array For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated Transistors in one packageType Marking Ordering Code Pin Configuration PackageBC 857S 3Cs Q62702-2373 1/4=E1/E2 2/5=B1/B2 3/6=C2/C1 SOT-363Maximum RatingsParameter Symbol Values UnitCollec

PNP Silicon AF Transistors BC 856 ... BC 860Features For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 846, BC 847,BC 849, BC 850 (NPN)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3BC 856 A 3As Q62702-C1773 B E C SOT-23BC 856 B 3Bs Q6

NPN Silicon AF Transistors BC 846 ... BC 850Features For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 856, BC 857,BC 859, BC 860 (PNP)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3BC 846 A 1As Q62702-C1772 B E C SOT-23BC 846 B 1Bs Q6

BC 817-16WNPN Silicon AF Transistor For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC807W, BC808W (PNP)Type Marking Ordering Code Pin Configuration PackageBC 817-16W 6As Q62702-C2320 1 = B 2 = E 3 = C SOT-323BC 817-25W 6Bs Q62702-C2278 1 = B 2 = E 3 = C SOT-323BC 817-40W 6Cs Q6

NPN Silicon AF Transistor BC 846 W ... BC 850 WFeatures For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30Hz and 15 kHz Complementary types: BC 856 W, BC 857 W,BC 858 W,BC 859 W,BC 860 W (PNP)Type Marking Ordering code Pin Configuration Package(tape and reel) 1 2 3B E CBC 846 AW 1 As Q62702-C2319 SO

BC 846PNNPN/PNP Silicon AF Transistor Array4 For AF input stages and driver applications5 High current gain6 Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN/PNP Transistors in one package32VPS056041Tape loading orientationPIN ConfigurationType Marking Ordering Code Package NPN-Transistor 1 = E 2 = B 6 = CBC 846PN 1Os Q6

BC848BW / BC848B Transistors NPN General Purpose Transistor BC848BW / BC848B Features External dimensions (Unit : mm) 1) BVCEO minimum is 30V (IC=1mA) BC848BW2) Complements the BC858B / BC858BW. 2.00.21.30.1 0.90.10.65 0.650.2 0.70.1(1) (2)0~0.1 (3)+0.10.3 (1) Emitter -0 0.150.05ROHM : UMT3 (2) BaseAll terminals have same dimensionsEIAJ : SC-7

PNP small signal transistor BC857B Features Dimensions (Unit : mm) 1) Ideal for switching and AF amplifier applications. BC857B2) High current gain. 2.9 0.950.4 0.45(3)Packaging specificationsPackage Taping(2) (1)Type Code T1160.95 0.950.151.9Basic ordering unit (pieces) 3000(1)EmitterBC857B(2)BaseEach lead has same dimensions(3)CollectorAb

BC858BW / BC858B Transistors PNP General Purpose Transistor BC858BW / BC858B External dimensions (Unit : mm) Features 1) BVCEO

BC847B HZGDatasheetNPN General purpose transistorAEC-Q101 QualifiedlOutlinel SOT-23 Parameter Value VCEO45VIC100mASST3lFeatures lInner circuitl l1)BVCEO>45V(IC=1mA)2)Complements the BC857B HZG.lApplicationlAUDIO FREQUENCY SMALL SIGNAL AMPLIFIERlPackaging specificationslBasicPackage Taping Reel size Tape width

BC847B / BC847BU3DatasheetGeneral purpose small signal amplifier(50V, 150mA)lOutlinelParameter Value SOT-23 SOT-323VCEO45VIC100mA BC847B BC847BU3(SST3) (UMT3) lFeatures lInner circuitl l1)BVCEO>45V(IC=1mA)2)Complements the BC857B/BC857BU3.lApplicationlGENERAL PURPOSE SMALL SIGNAL AMPLIFIER

BC858BW / BC858BTransistorsPNP General Purpose TransistorBC858BW / BC858B External dimensions (Units : mm) Features1) BVCEO

Transistors BC847B(SPEC-C22)619

R6046FNZDatasheetNch 600V 46A Power MOSFETlOutlinel TO-3PFVDSS600VRDS(on)(Max.)93m ID46A PD120W lInner circuitllFeaturesl1) Fast reverse recovery time (trr).2) Low on-resistance.3) Fast switching speed.4) Gate-source voltage (VGSS) guaranteed

BC857B HZGDatasheetPNP General purpose transistorAEC-Q101 QualifiedlOutlinel SOT-23 Parameter Value VCEO-45VIC-100mASST3lFeatures lInner circuitl l1)BVCEO>45V(IC=1mA)2)Complements the BC847B HZGlApplicationlAUDIO FREQUENCY SMALL SIGNAL AMPLIFIERlPackaging specificationslBasicPackage Taping Reel size Tape widt

BC848BW / BC848B Transistors NPN General Purpose Transistor BC848BW / BC848B Features External dimensions (Unit : mm) 1) BVCEO minimum is 30V (IC=1mA) BC848BW2) Complements the BC858B / BC858BW. SOT-3232.00.21.30.1 0.90.10.65 0.650.2 0.70.1(1) (2)0~0.1 (3)+0.10.3 (1) Emitter -0 0.150.05ROHM : UMT3 (2) BaseAll terminals have same dimensionsEI

BC847B Transistors NPN General Purpose Transistor BC847B Features External dimensions (Unit : mm) 1) BVCEO

Transistors BC857B(SPEC-A32)607

VS-FC80NA20www.vishay.comVishay SemiconductorsSOT-227 Power Module High Side Chopper - Power MOSFET, 100 AFEATURES3 (D)MOSFET Enhanced body diode dV/dt and dIF/dt capability Improved gate avalanche and dynamic dV/dt 2 (G)ruggedness1 Fully characterized capacitance and avalanche SOA(S, K) Fully isolated packageSOT-227 Easy to use and parallel

BC856W SERIESBC857W SERIESwww.centralsemi.comSURFACE MOUNTDESCRIPTION:PNP SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR BC856W and BC857W Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE: SEE MARKING CODE

BC846W SERIESBC847W SERIESwww.centralsemi.comSURFACE MOUNTDESCRIPTION:NPN SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR BC846W and BC847W Series types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE: SEE MARKING CODE

BC856W SERIESBC857W SERIESwww.centralsemi.comSURFACE MOUNTDESCRIPTION:PNP SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR BC856W and BC857W Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE: SEE MARKING CODE

BC856W SERIESBC857W SERIESwww.centralsemi.comSURFACE MOUNTDESCRIPTION:PNP SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR BC856W and BC857W Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE: SEE MARKING CODE

BC846W SERIESBC847W SERIESwww.centralsemi.comSURFACE MOUNTDESCRIPTION:NPN SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR BC846W and BC847W Series types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE: SEE MARKING CODE

BC856T SERIESBC857T SERIESwww.centralsemi.comSURFACE MOUNTDESCRIPTION:PNP SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR BC856T and BC857T Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE: SEE MARKING CODE TABLEON FOL

BC846W SERIESBC847W SERIESwww.centralsemi.comSURFACE MOUNTDESCRIPTION:NPN SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR BC846W and BC847W Series types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE: SEE MARKING CODE

BC847AT, BT, CT 45V NPN SMALL SIGNAL TRANSISTOR IN SOT523 Features Mechanical Data BVCEO > 45V Case: SOT523 IC = 100mA Collector Current Case Material: Molded Plastic. Green Molding Compound. Epitaxial Planar Die Construction UL Flammability Rating 94V-0 Ultra-Small Surface Mount Package Moisture Sensitivity: Level 1 per J-STD-020 Complementar

BC847BLD SMALL SIGNAL NPN TRANSISTOR WITH CONTROLLED BASE-EMITTER VOLTAGE Please click here to visit our online spice models database.Features Low Deviation in Base-Emitter Voltage Surface Mount Package Ideally Suited for Automated Assembly Processes Lead Free by Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for

BC807-16/ -25/ -40 PNP SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Ideally Suited for Automatic Insertion A SOT-23 Epitaxial Planar Die Construction CDim Min Max For Switching, AF Driver and Amplifier Applications A 0.37 0.51 Complementary NPN Types Available (BC817) B CB 1.20 1.40 Lead, Halogen and

BC856AW - BC858CW PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Ideally Suited for Automated Insertion SOT-323 Complementary NPN Types Available (BC846W-BC848W) CDim Min Max For Switching and AF Amplifier Applications A 0.25 0.40 Lead Free/RoHS Compliant (Note 3) B CB 1.15 1.35 "Green" Device (Note 4 and 5) C 2.00 2.20 BED 0.65 Nominal

BC846AW-BC848CW NPN SMALL SIGNAL TRANSISTOR IN SOT323 Features Mechanical Data Ideally Suited for Automatic Insertion Case: SOT323 Complementary PNP Types: BC856W BC858W Case Material: Molded Plastic, Green Molding Compound For Switching and AF Amplifier Applications UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Complian

BC847BVC NPN DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data BVCEO > 45V Case: SOT563 Ultra-Small Surface Mount Package Case Material: Molded Plastic, "Green" Molding Compound. UL Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Flammability Classification Rating 94V-0 Halogen and Antimony Free. Green Device (Note 3) Moistu

BC847BSDUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Ultra-Small Surface Mount Package Case: SOT363 Ideally Suited for Automated Insertion Case Material: Molded Plastic, Green Molding Compound. UL For switching and AF Amplifier Application Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS compliant (Notes 1

BC817-16 / -25 / -40NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Ideally Suited for Automated Insertion Case: SOT-23 Epitaxial Planar Die Construction Case Material: Molded Plastic, Green Molding Compound, Note 4. UL Flammability Classification Rating 94V-0 For Switching, AF

BC817-16Q /-25Q /-40Q 45V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the Case: SOT23 stringent requirements of automotive applications. Case Material: Molded Plastic, Green Molding Compound; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Featu

BC857BFA45V PNP SMALL SIGNAL TRANSISTOR IN DFN0806 Features Mechanical Data BVCEO > -45V Case: X2-DFN0806-3 IC = -100mA high Collector Current Case Material: Molded Plastic, Green Molding Compound. PD = 435mW Power Dissipation UL Flammability Classification Rating 94V-0 0.48mm2 package footprint, 16 times smaller than SOT23 Moisture Sensitivity: Leve

BC817-16W / -25W / -40WLead-free GreenNPN SURFACE MOUNT SMALL SIGNAL TRANSISTORFeatures Ideally Suited for Automatic Insertion Epitaxial Planar Die Construction For Switching, AF Driver and Amplifier ApplicationsSOT-323 Complementary PNP Types Available (BC807-xxW)Dim Min Max Lead Free By Design/RoHS Compliant (Note 1)AA0.25 0.40 "Green" Device (Note 2)CB1.15 1

BC817-16/-25/-40 45V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Ideally Suited for Automatic Insertion Case: SOT23 Epitaxial Planar Die Construction Case Material: Molded Plastic, Green Molding Compound; Complementary PNP Types Available (BC807) UL Flammability Classification Rating 94V-0 For switching and AF Amplifier Applications

BC846AS 65V DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR IN SOT363 Features Mechanical Data BVCEO > 65V Case: SOT363 Ultra-Small Surface Mount Package Case Material: Molded Plastic, Green Molding Compound. UL Ideally Suited for Automated Insertion Flammability Classification Rating 94V-0 For Switching and AF Amplifier Application Moisture Sensitiv

BC846A - BC848C NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Please click here to visit our online spice models database.Features Ideally Suited for Automatic Insertion SOT-23 Complementary PNP Types Available (BC856-BC858) For Switching and AF Amplifier Applications Dim Min Max Lead, Halogen and Antimony Free, RoHS Compliant A 0.37 0.51 "Green" Device (Notes

BC847BLP 45V NPN SMALL SIGNAL TRANSISTOR IN DFN1006 Features Mechanical Data Case: X1-DFN1006-3 BVCEO > 45V Case Material: Molded Plastic, "Green" Molding Compound. IC = 100mA High Collector Current UL Flammability Classification Rating 94V-0 PD = 1000mW Power Dissipation Moisture Sensitivity: Level 1 per J-STD-020 0.60mm2 Package Footprint, 13 ti

BC847BV NPN DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Die Construction SOT-563 C1 B2 E2 Complementary PNP Type Available (BC857BV) Dim Min Max Typ Ultra-Small Surface Mount Package A 0.15 0.30 0.25BC Lead Free By Design/RoHS Compliant (Note 3) K4V YM "Green" Device (Note 5 and 6) B 1.10 1.25 1.20E1 B1 C2C 1.55 1.70 1.60DMe

BC817-16Q /-40Q 45V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Description Mechanical Data Case: SOT23 This Bipolar Junction Transistor (BJT) is designed to meet the Case Material: Molded Plastic, Green Molding Compound; UL stringent requirements of Automotive Applications. Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Feature

BC847AT, BT, CT NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Die Construction A SOT-523 Complementary PNP Types Available Dim Min Max Typ C(BC857AT,BT,CT) A 0.15 0.30 0.22 Ultra-Small Surface Mount Package B 0.75 0.85 0.80 Lead Free/RoHS Compliant (Note 2) B CTOP VIEWC 1.45 1.75 1.60 "Green" Device (Note 4 and 5) D 0.50B

BC847CDLP45V DUAL NPN SMALL SIGNAL TRANSISTOR Features Mechanical Data BVCEO > 45V Case: X2-DFN1310-6 Nominal package height: 0.4mm Low profile 0.4mm high package for thin applications Case Material: Molded Plastic, Green Molding Compound. Ultra-Small Surface Mount Package UL Flammability Classification Rating 94V-0 Totally Lead-Free & Full

BC847PN COMPLEMENTARY PAIR SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data Epitaxial Die Construction Case: SOT363 Two Internally Isolated NPN/PNP Transistors in One Package Case Material: Molded Plastic, Green Molding Compound. Ideal for Medium Power Amplification and Switching UL Flammability Classification Rating 94V-0 Ultra-Small Surface

BC857AT, BT, CT 45V PNP SMALL SIGNAL TRANSISTOR IN SOT523 Features Mechanical Data BVCEO > -45V Case: SOT523 Case Material: Molded Plastic. Green Molding Compound. IC = -100mA Collector Current UL Flammability Rating 94V-0 Epitaxial Planar Die Construction Moisture Sensitivity: Level 1 per J-STD-020 Ultra-Small Surface Mount Package Ter

BC857BFZ 45V PNP SMALL SIGNAL TRANSISTOR IN DFN0606 Features Mechanical Data BVCEO > -45V Case: X2-DFN0606-3 IC = -100mA High Collector Current Case Material: Molded Plastic, Green Molding Compound. PD = 925mW Power Dissipation UL Flammability Classification Rating 94V-0 0.36mm2 Package Footprint, 40% Smaller than DFN1006 Moisture Sensitivity: Level

BC847BLP4 45V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Die Construction Case: DFN1006H4-3 Ultra-Small Leadless Surface Mount Package Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Ultra Low Profile (0.4mm max) Moisture Sensitivity: Level 1 per J-STD-020 Complement

BC856A - BC858C PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR Please click here to visit our online spice models database.Features Ideally Suited for Automatic Insertion Complementary NPN Types Available (BC846-BC848) ASOT-23 For Switching and AF Amplifier Applications CDim Min Max Qualified to AEC-Q101 Standards for High Reliability A 0.37 0.51 B C Lead

BC847BVN COMPLEMENTARY PAIR SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Die Construction Case: SOT563 Two Internally Isolated NPN/PNP Transistors in One Package Case Material: Molded Plastic, Green Molding Compound. Ultra-Small Surface Mount Package UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully Ro

BC847BFZ 45V NPN SMALL SIGNAL TRANSISTOR IN DFN0606 Features Mechanical Data BVCEO > 45V Case: X2-DFN0606-3 IC = 100mA High Collector Current Case Material: Molded Plastic, Green Molding Compound, PD = 925mW Power Dissipation UL Flammability Classification Rating 94V-0 0.36mm2 Package Footprint, 40% Smaller than DFN1006 Moisture Sensitivity: Level 1

SOT23 PNP SILICON PLANAR BC856 BC857BC858 BC859GENERAL PURPOSE TRANSISTORSBC860 ISSUE 6 - APRIL 1997 T I D T I T T E 8 8 8 8 8 C 8 8 8 8 8 8 8 8 8 8B 8 8 8 8 8 8 8 8 SOT23 8 8 8 8 8 8 ABSOLUTE MAXIMUM RATINGS. T 8 8 8 8 8 8 IT II V I V 8 V II i V I V 8 V II i V I V V i V I V V i II I I I I I Di i i T i T T T ELECTRICAL CH

BC857AT, BT, CT PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Die Construction SOT-523 Complementary NPN Types Available (BC847AT,BT,CT) CDim Min Max Typ Ultra-Small Surface Mount Package A 0.15 0.30 0.22 Lead Free/RoHS Compliant (Note 2) TOP VIEW B CB 0.75 0.85 0.80 Qualified to AEC-Q101 Standards for High Reliability C 1.45 1.75

BC857BV PNP DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Die Construction Case: SOT-563 Complementary PNP Type Available (BC847BV) Case Material: Molded Plastic, Green Molding Compound; Ultra-Small Surface Mount Package UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

BC817-16W/-25W/-40W 45V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Ideally Suited for Automatic Insertion Case: SOT323 Epitaxial Planar Die Construction Case Material: molded plastic, Green molding compound Complementary PNP Types: BC807-xxW UL Flammability Classification Rating 94V-0 For switching and AF Amplifier Applications Moi

BC856AW-BC858CW PNP SMALL SIGNAL TRANSISTOR IN SOT323 Features Mechanical Data Ideally Suited for Automatic Insertion Case: SOT323 Complementary NPN Types Available (BC846AW BC848CW) Case material: molded plastic, Green molding compound For switching and AF Amplifier Applications UL Flammability Classification Rating 94V-0 Totally Lead-Free & Ful

AC847BWQ_AC847CWQ NPN SMALL SIGNAL TRANSISTOR IN SOT323 Description Mechanical Data AC847BWQ and AC847CWQ Bipolar Junction Transistors (BJT) are Case: SOT323 designed to meet the stringent requirements of Automotive Case Material: Molded Plastic, Green Molding Compound. UL Applications. Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-S

BC846A-BC848C NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Ideally Suited for Automatic Insertion Case: SOT23 Complementary PNP Types: BC856 BC858 Case material: molded plastic, Green molding compound For switching and AF Amplifier Applications UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS compliant (Note

BC857BS45V DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Ultra-Small Surface Mount Package Case: SOT363 Ideally Suited for Automated Insertion Case Material: Molded Plastic, Green Molding Compound. For switching and AF Amplifier Application UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS compliant (Not

BC817-16Q / -25Q / -40Q 45V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Description Mechanical Data Case: SOT23 This Bipolar Junction Transistor (BJT) is designed to meet the Case Material: Molded Plastic, Green Molding Compound; UL stringent requirements of Automotive Applications. Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020

BC856A-BC858C PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Ideally Suited for Automatic Insertion Case: SOT23 Complementary NPN Types: BC846 BC848 Case Material: Molded Plastic, Green Molding Compound For Switching and AF Amplifier Applications UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Not

BC847BFA45V NPN SMALL SIGNAL TRANSISTOR IN DFN0806 Features Mechanical Data BVCEO > 45V Case: X2-DFN0806-3 IC = 100mA high Collector Current Case Material: Molded Plastic, Green Molding Compound. PD = 435mW Power Dissipation UL Flammability Classification Rating 94V-0 0.48mm2 package footprint, 16 times smaller than SOT23 Moisture Sensitivity: Level

BC846 BC847SOT23 NPN SILICON PLANAR BC848 BC849GENERAL PURPOSE TRANSISTORSBC850 ISSUE 6 - JANUARY 1997 T I D T I T T 8 8 8 8 8 8 8 8 8 8 EC 8 8 8 8 8 8 8 8 8 8 B 8 8 8 8 8 8 8 SOT23ABSOLUTE MAXIMUM RATINGS. T 8 8 8 8 8 8 IT II V I V 8 V II i V I V 8 V II i V I V V i V I V V i II I II I I i I Di i i T i T T T ELECTRICAL CHAR

BC847PNQ COMPLEMENTARY PAIR SMALL SIGNAL TRANSISTOR IN SOT363 Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the Case: SOT363 stringent requirements of Automotive Applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Feat

SOT23 NPN SILICON PLANARBC817MEDIUM POWER TRANSISTORSBC818ISSUE 4 june 1996 T I D T I 8 D 8 8 8 8 8 EC 8 8 8 8 8 8 B T T 8 8 8 8 8 8SOT23ABSOLUTE MAXIMUM RATINGS. T 8 8 8 IT II V I V V II i V I V V i V I V V I I i II I I I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I T IT

BC856AS 65V DUAL PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data BVCEO > -65V Case: SOT363 IC = -100mA High Collector Current Case Material: Molded Plastic, Green Molding Compound. Complementary NPN Types Available (BC846AS) UL Flammability Classification Rating 94V-0 Ideally Suited for Automatic Insertion Moisture Sensi

BC857BLP4 45V PNP SMALL SIGNAL TRANSISTOR IN DFN1006 Features Mechanical Data Case: X2-DFN1006-3 BVCEO > -45V Case Material: Molded Plastic, "Green" Molding Compound. IC = -100mA High Collector Current UL Flammability Classification Rating 94V-0 PD = 1000mW Power Dissipation Moisture Sensitivity: Level 1 per J-STD-020 0.60mm2 Package Footprint, 13

BC807-16W / -25W / -40WPNP SURFACE MOUNT TRANSISTORLead-free GreenFeatures Ideally Suited for Automatic Insertion Epitaxial Planar Die Construction For Switching, AF Driver and Amplifier ApplicationsSOT-323 Complementary NPN Types Available (BC817-xxW)Dim Min Max Lead Free By Design/RoHS Compliant (Note 1)AA0.25 0.40 "Green" Device (Note 2)CB1.15 1.35Mechanic

SOT23 PNP SILICON PLANARBC807MEDIUM POWER TRANSISTORSBC808ISSUE 4 JUNE 1996 T I D T I 8 D 8 8 E 8 8 8 C 8 8 8 8 8 8 B T T 8 8 8 8 8 8SOT23ABSOLUTE MAXIMUM RATINGS. T 8 8 8 IT II V I V V II i V I V V i V I V V I I i II I I I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I T IT DIT

BC807-16W/ -25W/ -40W45V PNP SMALL SIGNAL TRANSISTOR IN SOT323 Features Mechanical Data Ideally Suited for Automatic Insertion Case: SOT323 Epitaxial Planar Die Construction Case Material: Molded Plastic, Green Molding Compound Complementary NPN Types Available (BC817-xxW) UL Flammability Classification Rating 94V-0 For Switching and AF Amplifier Applica

BC846BLP4 65V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Low Collector-Emitter Saturation Voltage, VCE(SAT) Case: X2-DFN1006-3 Case Material: Molded Plastic, "Green" Molding Compound. Ultra-Small Leadless Surface Mount Package UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Note 1 & 2) Moisture

BC856A-BC858C PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Ideally Suited for Automatic Insertion Case: SOT23 Complementary NPN Types: BC846 BC848 Case Material: Molded Plastic, Green Molding Compound For Switching and AF Amplifier Applications UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Not

BC857BLP 45V PNP SMALL SIGNAL TRANSISTOR IN DFN1006 Features Mechanical Data Case: X1-DFN1006-3 BVCEO > -45V Case Material: Molded Plastic, "Green" Molding Compound. IC = -100mA High Collector Current UL Flammability Classification Rating 94V-0 PD = 1000mW Power Dissipation Moisture Sensitivity: Level 1 per J-STD-020 0.60mm2 Package Footprint, 13

BC846AW - BC848CW NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Ideally Suited for Automatic Insertion SOT-323 Complementary PNP Types Available (BC856W-BC858W) CDim Min Max For Switching and AF Amplifier Applications A 0.25 0.40 Lead Free/RoHS Compliant (Note 3) B CB 1.15 1.35 "Green" Device (Note 4 and 5) C 2.00 2.20 B ED 0.65 Nomina

BC846AW - BC848CWNPN SURFACE MOUNT SMALL SIGNAL TRANSISTORFeatures Ideally Suited for Automatic InsertionSOT-323 Complementary PNP Types AvailableA(BC856W-BC858W) Dim Min MaxCA For Switching and AF Amplifier Applications 0.25 0.40B1.15 1.35Mechanical DataB CC2.00 2.20 Case: SOT-323, Molded PlasticD0.65 NominalB E Case material - UL Flammability Rating

AC857BQ-AC857CQ PNP SMALL SIGNAL TRANSISTOR IN SOT23 Description Mechanical Data Case: SOT23 The AC857BQ-AC857CQ Bipolar Junction Transistors (BJT) are Case Material: Molded Plastic, Green Molding Compound designed to meet the stringent requirements of Automotive UL Flammability Classification Rating 94V-0 Applications. Moisture Sensitivity: Level 1 per J-STD

BC807-16/-25/-40 45V PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Ideally Suited for Automatic Insertion Case: SOT23 Epitaxial Planar Die Construction Case Material: Molded Plastic, Green Molding Compound Complementary NPN Types Available (BC817) UL Flammability Classification Rating 94V-0 For switching and AF Amplifier Applications

AC857CWQ 45V PNP SMALL SIGNAL TRANSISTOR IN SOT323 Description Mechanical Data Case: SOT323 AC857CWQ Bipolar Junction Transistor (BJT) is designed to meet the Case Material: Molded Plastic, Green Molding compound stringent requirements of Automotive Applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Featu

BC817UPNNPN Silicon AF Transistor Array For AF stages and driver applications43 High current gain 5261 Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN/PNP transistors in one package Pb-free (RoHS compliant) package Qualified according AEC Q101C1 B2 E26 5 4Tape loading orientationTR2Marking on SC74 package TR1

SIGC81T120R2CL IGBT Chip in NPT-technology FEATURES: This chip is used for: C 1200V NPT technology 180m chip power module low turn-off losses BSM50GD120DLC short tail current positive temperature coefficient Applications: easy paralleling G drives E integrated gate resistor Chip Type VCE ICn Die Size Package Ordering Code Q67041-

BC846PN/UPN_BC847PNNPN/PNP Silicon AF Transistor Arrays For AF input stage and driver applications High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN/PNP transistor in one package Pb-free (RoHS compliant) package Qualified according AEC Q101BC846PNBC846UPNBC847PNC1 B2 E26 5 4TR2TR11 2 3E1 B1 C2EHA

IGC89T170S8RM IGBT3 Power Chip Features: This chip is used for: 1700V Trench + Field stop technology power modules C low switching losses soft turn off Applications: positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package IGC89T170S8RM 1700V 75A 8.85 x 10.09 mm2 sawn on foil Mechanical Parameters Ra

BC856...-BC860...PNP Silicon AF Transistor For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC846...-BC850... (NPN) Pb-free (RoHS compliant) package1) Qualified according AEC Q1011Pb-containing package may be available upon special request20

IAUC80N04S6L032OptiMOS- 6 Power-TransistorProduct SummaryVDS 40 VRDS(on),max 3.2mWID 80 AFeaturesPG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanche tested

SIGC84T120R3LE IGBT3 Chip Features: This chip is used for: 1200V Trench & Field Stop technology power modules C low turn-off losses short tail current Applications: positive temperature coefficient drives easy parallelingG E Chip Type VCE IC Die Size PackageSIGC84T120R3LE 1200V 75A 9.13 x 9.15 mm2 sawn on foil Mechanical Parameters Raster

BC846...-BC850...NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC856...-BC860...(PNP) Pb-free (RoHS compliant) package1) Qualified according AEC Q1011Pb-containing package may be available upon special request20

SIGC81T120R2CS IGBT Chip in NPT-technology FEATURES: 1200V NPT technology 175m chip This chip is used for: C low turn-off losses IGBT Modules short tail current positive temperature coefficient Applications: easy paralleling G drives, SMPS, resonant integrated gate resistor E applications Chip Type VCE ICn Die Size Package Ordering Code

BC817K.../BC818K...NPN Silicon AF Transistor For general AF applications High collector current High current gain Low collector-emitter saturation voltage Pb-free (RoHS compliant) package Qualified according AEC Q101Type Marking Pin Configuration PackageBC817K-16 6As 1 = B 2 = E 3 = C - - - SOT23 BC817K-16W 6As 1 = B 2 = E 3 = C - - - SOT323 BC817K-25 6Bs

BC847...-BC850...NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC857...-BC860...(PNP) Pb-free (RoHS compliant) package Qualified according AEC Q1011)1BC847BL3 is not qualified according AEC Q101Type Marking Pin

BC846...-BC850...NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC856...-BC860...(PNP) Pb-free (RoHS compliant) package1) Qualified according AEC Q1011Pb-containing package may be available upon special request20

BC846...-BC850...NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC856...-BC860...(PNP) Pb-free (RoHS compliant) package1) Qualified according AEC Q1011Pb-containing package may be available upon special request20

IGC82T170S8RM IGBT3 Power Chip Features: This chip is used for: 1700V Trench + Field stop technology power modules C low switching losses soft turn off Applications: positive temperature coefficient drives easy parallelingG E Chip Type VCE IC Die Size PackageIGC82T170S8RM 1700V 70A 9.10 x 9.06 mm2 sawn on foil Mechanical Parameters Raster

BC846...-BC850...NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC856...-BC860...(PNP) Pb-free (RoHS compliant) package1) Qualified according AEC Q1011Pb-containing package may be available upon special request20

BC846S/ BC846U/ BC847SNPN Silicon AF Transistor Arrays For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated transistors with good matching in one package BC846S / U, BC847S: For orientation in reel see package information below Pb-free (RoHS compliant) package Qualified ac

BC807UPNP Silicon AF Transistor Array For AF input stages and driver applications43 High current gain 5261 Low collector-emitter saturation voltage Two (galvanic) internal isolated Transistor with good matching in on package Pb-free (RoHS compliant) package Qualified according AEC Q101C1 B2 E26 5 4TR2TR11 2 3E1 B1 C2EHA07175Type Markin

SIGC81T60SNC IGBT Chip in NPT-technology CFEATURES: This chip is used for: 600V NPT technology 100m chip IGBT-Modules short circuit prove positive temperature coefficient Applications: G easy paralleling E drives Chip Type VCE ICn Die Size Package Ordering Code Q67050-A4164-SIGC81T60SNC 600V 100A 8.99 x 8.99 mm2 sawn on foil A003 MEC

BC857...-BC860...PNP Silicon AF Transistor For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC847...-BC850... (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q1011)1BC857BL3 is not qualified according AEC Q101Type Marking Pin

BC817K.../BC818K...NPN Silicon AF Transistor For general AF applications High collector current High current gain Low collector-emitter saturation voltage Pb-free (RoHS compliant) package Qualified according AEC Q101Type Marking Pin Configuration PackageBC817K-16 6As 1 = B 2 = E 3 = C - - - SOT23 BC817K-16W 6As 1 = B 2 = E 3 = C - - - SOT323 BC817K-25 6Bs

IAUC80N04S6N036OptiMOS- 6 Power-TransistorProduct SummaryVDS 40 VRDS(on),max 3.6mWID 80 AFeaturesPG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanche tested

BC817SUNPN Silicon AF Transistor For general AF applications43 High collector current 5261 High current gain Low collector-emitter saturation voltage Pb-free (RoHS compliant) package Qualified according AEC Q101Type Marking Pin Configuration PackageBC817SU B6s1=E 2=C 3=C 4=C 5=C 6=B SC74Maximum RatingsParameter Symbol Value Unit45 VCollect

SIGC84T120R3LE IGBT3 Power Chip Features: This chip is used for: 1200V Trench & Field Stop technology power modules C low turn-off losses short tail current Applications: positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package SIGC84T120R3LE 1200V 75A 9.13 x 9.15 mm2 sawn on foil Mechanical Parameters

BC856...-BC860...PNP Silicon AF Transistor For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC846...-BC850... (NPN) Pb-free (RoHS compliant) package1) Qualified according AEC Q1011Pb-containing package may be available upon special request20

SIGC81T120R2CIGBT Chip in NPT-technologyFeatures: This chip is used for: 1200V NPT technology power module CBSM 50GD120DN2 low turn-off losses positive temperature coefficientApplications: easy paralleling drives integrated gate resistorGEChip Type VCE IC Die Size PackageSIGC81T120R2C 1200V 50A 9.08 X 8.98 mm2 sawn on foilMechanical Parameter

BC857...-BC860...PNP Silicon AF Transistor For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC847...-BC850... (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q1011)1BC857BL3 is not qualified according AEC Q101Type Marking Pin

SIGC84T120R3 IGBT3 Chip FEATURES: 1200V Trench + Field Stop technology This chip is used for: C low turn-off losses power module short tail current positive temperature coefficient Applications: easy paralleling G drives E Chip Type VCE ICn Die Size Package Ordering Code Q67050-SIGC84T120R3 1200V 75A 9.13 x 9.15 mm2 sawn on foil A4107-A00

BC856S/U_BC857SPNP Silicon AF Transistor Arrays For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated transistor with good matching in one package BC856S / U, BC857S: For orientation in reel see package information below Pb-free (RoHS compliant) package Qualified according

SIGC81T60NC IGBT Chip in NPT-technology CFEATURES: This chip is used for: 600V NPT technology 100m chip IGBT-Modules short circuit prove positive temperature coefficient Applications: G easy paralleling E drives Chip Type VCE ICn Die Size Package Ordering Code Q67041-A4694-SIGC81T60NC 600V 100A 8.99 x 8.99 mm2 sawn on foil A001 MECHA

SIGC84T120R3E IGBT3 Power Chip Features: This chip is used for: 1200V Trench & Field Stop technology power modules C low turn-off losses short tail current Applications: positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package SIGC84T120R3E 1200V 75A 9.13 x 9.15 mm2 sawn on foil Mechanical Parameters

BC817UNPN Silicon AF Transistor Array For AF stages and driver applications43 High current gain 5261 Low collector-saturation voltage Two (galvanic) internal isolated transistors with good matching in one package Pb-free (RoHS compliant) package Qualified according AEC Q101C1 B2 E26 5 4TR2TR11 2 3E1 B1 C2EHA07178Type Marking Pin Config

ADVANCE TECHNICAL INFORMATIONHiPerFETTM MOSFET IXFC 80N10 VDSS = 100 VISOPLUS220TM ID25 = 80 AElectrically Isolated Back Surface RDS(on) = 12.5 m trr 200 ns N-Channel Enhancement ModeHigh dv/dt, Low t , HDMOSTM FamilyrrSymbol Test Conditions Maximum RatingsISOPLUS 220TMVDSS TJ = 25C to 150C 100 VVDGR TJ = 25C to 150C;

ADVANCE TECHNICAL INFORMATIONVDSS ID25 RDS(on)HiPerFETTM MOSFETIXFC 80N08 80 V 80 A 11 mISOPLUS220TM85 V 80 A 11 mIXFC 80N085Electrically Isolated Back SurfaceN-Channel Enhancement ModeHigh dv/dt, Low trr, HDMOSTM FamilySymbol Test Conditions Maximum RatingsISOPLUS220TMVDSS TJ = 25C to 150C 80N08 80 VVDGR TJ = 25C to

BC846S/BC846BSFeatures For Switching and AF Amplifier Applications Halogen Free Available Upon Request By Adding Suffix "-HF" Moisture Sensitivity Level 1Dual NPN Epoxy Meets UL 94 V-0 Flammability RatingSmall Signal Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)TransistorsMaximum Ratings @ 25C Unless Ot

BC856AW THRU BC858CWFeatures Halogen free available upon request by adding suffix "-HF" Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating PNP Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSGeneral Purpose Compliant. See Ordering Information)TransistorsMaximum Ratings @ 25C Unless Otherwise Specified Operating Junction Tempera

MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthBC847BSMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)Dual NPN Small Ideally Suited for Automatic Insertion Ultra-Small Surface Mount Package Signal Transistor

MCCMicro Commercial ComponentsTMBC847AT, BT, CT20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939NPNFeatures Lead Free Finish/RoHS Compliant ("P" Suffix designates Surface Mount Small RoHS Compliant. See ordering information) Epitaxial Die ConstructionSignal Transistor Complementary PNP Type Avai

MCAC80N045YElectrical Characteristics @ 25C (Unless Otherwise Specified)Parameter Symbol Test Conditions Min Typ Max UnitStatic CharacteristicsV(BR)DSS VGS=0V, ID=250ADrain-Source Breakdown Voltage 45 VIGSS VDS=0V, VGS =20VGate-Source Leakage Current 100 nAVDS=32V, VGS=0V, TJ=25C1IDSSZero Gate Voltage Drain Current AVDS=32V, VGS=0V, TJ=85C30VGS(t

MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthBC847BSMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)Dual NPN Small Ideally Suited for Automatic Insertion Ultra-Small Surface Mount Package Signal Transistor

BC856SFeatures Muti-Chip Transistor Halogen Free. Green Device (Note 1)PNP Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability RatingPlastic-Encapsulate Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS TransistorsCompliant. See Ordering Information) Maximum Ratings @ 25C Unless Otherwise SpecifiedSOT-363 Operating Junct

BC817DPNFeatures Halogen Free Available Upon Request By Adding Suffix "-HF" Moisture Sensitivity Level 1NPN/PNP Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSGeneral PurposeCompliant. See Ordering Information)TransistorsMaximum Ratings @ 25C Unless Otherwise Specified Operating Junction Temperature Ran

BC817-16MCCMicro Commercial ComponentsTM THRU20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311BC817-40Phone: (818) 701-4933Fax: (818) 701-4939FeaturesNPN Small Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)Signal Transistor Epox

MCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth BC847BVMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Epitaxial Die Construction NPN Complementary PNP Type Available (BC857BV) Plastic-Encapsulate Ultra-small Surface Mount Package Lead Free Finish/RoHS Compliant ("P" Suffix designates TransistorsRoH

M C CBC856ARMicro Commercial Components Micro Commercial ComponentsTHRU130 W Cochran St, Unit BSimi Valley, CA 93065BC858CTel:818-701-4933FeaturesPNP Small Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability ratingSignal TransistorMoisure Sensitivity Level 1 Ideally Suited for Au

BC847BVFeatures Epitaxial Die Construction Complementary PNP Type Available BC857BV Ultra-Small Surface Mount Package NPN Halogen Free. Green Device (Note 1)Plastic Encapsulate Moisture Sensitivity Level 1Amplifier Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Inform

BC847PNFeatures Ultra-Small Surface Mount Package Halogen Free. Green Device (Note 1)NPN/PNP Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability RatingSmall Signal Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS TransistorsCompliant. See Ordering Information) Maximum Ratings @ 25C Unless Otherwise Specified Operating Jun

BC857SFeatures Muti-Chip Transistor Halogen Free. Green Device (Note 1)PNP Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability RatingPlastic-Encapsulate Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS TransistorsCompliant. See Ordering Information) Maximum Ratings @ 25C Unless Otherwise SpecifiedSOT-363 Operating Junct

MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthBC857BVMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939FeaturesPNP Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1Transistors

BC856BSFeatures Muti-Chip Transistor Halogen Free Available Upon Request By Adding Suffix "-HF"PNP Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability RatingPlastic-Encapsulate Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS TransistorsCompliant. See Ordering Information)Maximum Ratings @ 25C Unless Otherwise SpecifiedSOT-363

MCCBC846ATMMicro Commercial Components20736 Marilla Street ChatsworthTHRUMicro Commercial ComponentsCA 91311Phone: (818) 701-4933BC848CFax: (818) 701-4939FeaturesNPN Power Dissipation: 0.225W (Tamb=25 )(Note 1) Collector Current: 0.1A Plastic-Encapsulate Case Material: Molded Plastic. UL FlammabilityTransistorsClassification Rating 94V-0 and MSL Rati

BC857BSFeatures Muti-Chip Transistor Halogen Free. Green Device (Note 1)PNP Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability RatingPlastic-Encapsulate Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS TransistorsCompliant. See Ordering Information) Maximum Ratings @ 25C Unless Otherwise SpecifiedSOT-363 Operating Junc

MCCBC846AW/BWMicro Commercial ComponentsMicro Commercial ComponentsBC847AW/BW/CW20736 Marilla Street ChatsworthCA 91311BC848AW/BW/CWPhone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPNRoHS Compliant. See ordering information) Low current (max. 100mA)General Purpose Low voltage (max. 65V) Epo

BC817-16MCCMicro Commercial ComponentsTM THRU20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311BC817-40Phone: (818) 701-4933Fax: (818) 701-4939FeaturesNPN Small Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)Signal Transistor Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity L

BC857A,BC857B,BC857CFeatures For Switching and AF Amplifier Applications Halogen Free Available Upon Request By Adding Suffix "-HF"PNP Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability RatingSmall Signal Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSTransistorCompliant. See Ordering Information)Maximum RatingsSOT-23 Operati

BC807-16 THRU BC807-40Features Halogen free available upon request by adding suffix "-HF" Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability RatingPNP Small Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)Signal Transistor 300mWMaximum RatingsSOT-23 Operating Junction Temperature Range: -55 to

BC807-16MCCMicro Commercial ComponentsTMBC807-2520736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311BC807-40Phone: (818) 701-4933Fax: (818) 701-4939FeaturesPNP Silicon Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)General Purpose Capable of 0.3Watts of Power Dissipation. Collector-curren

M C CTMMicro Commercial Components BC846A thru BC849CStatic Characteristic h I FE C 10 3000COMMON COMMON EMITTER EMITTER V CE= 5V T a =25 1000 8 T =100 a 20uA18uA6 16uAT =25 14uA a 12uA4 100 10uA 8uA 6uA 24uA I B=2uA 0 100 1 2 3 4 5 6 7 1 10 100 COLLECTOR CURRENT IC (mA) COLLECTOREMITTER VOLTAGE V CE (V) V I

BC858A,BC858B,BC858CFeatures For Switching and AF Amplifier Applications Halogen Free. "Green" Device (Note 1) PNP Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability RatingSmall Signal Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS TransistorCompliant. See Ordering Information) Maximum RatingsSOT-23 Operating Junction Temper

BC856AMCCMicro Commercial ComponentsTMTHRU20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933BC858CFax: (818) 701-4939FeaturesPNP Small Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability ratingSignal TransistorMoisure Sensitivity Level 1

BC856ALT1G SeriesGeneral PurposeTransistorsPNP SiliconFeatureswww.onsemi.com S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101COLLECTORQualified and PPAP Capable3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS (TA = 25C unless otherwise noted)2

BC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatures Moisture Sensitivity Level: 1www.onsemi.com ESD Rating - Human Body Model: >4000 VESD Rating - Machine Model: >400 V S and NSV Prefix for Automotive and Other Applications Requiring COLLECTOR3Unique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable1 These Devices are Pb-

NTMFD4C87NPowerPhase, DualN-Channel SO8FL30 V, High Side 20 A / Low Side 26 AFeatures Co-Packaged Power Stage Solution to Minimize Board Spacewww.onsemi.com Minimized Parasitic Inductances Optimized Devices to Reduce Power LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS5.4 mW @ 10 VQ1 Top FETCompliant20 A3

BC856BDW1T1G,SBC856BDW1T1G Series,BC857BDW1T1G,SBC857BDW1T1G Series,BC858CDW1T1G Serieswww.onsemi.comDual General PurposeTransistorsPNP DualsSOT-363/SC-88These transistors are designed for general purpose amplifierCASE 419BSTYLE 1applications. They are housed in the SOT-363/SC-88 which isdesigned for low power surface mount applications.(3) (2) (1)Features S

BC807-16L, BC807-25L,BC807-40LGeneral PurposeTransistorsPNP Siliconwww.onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueCOLLECTORSite and Control Change Requirements; AEC-Q101 Qualified and3PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1Compliant BASE2EMITTERMAXIMUM RATINGSRating Symbol Value

DATA SHEETwww.onsemi.comDual General PurposeTransistorsSOT-363/SC-88CASE 419BNPN DualsSTYLE 1BC846BDW1, BC847BDW1,(3) (2) (1)BC848CDW1These transistors are designed for general purpose amplifierQ1 Q2applications. They are housed in the SOT-363/SC-88 which isdesigned for low power surface mount applications.(4) (5) (6)Features S and NSV Prefixes for Automotiv

BC846BDW1T1G,SBC846BDW1T1G,BC847BDW1T1G,SBC847BDW1T1G Series,NSVBC847BDW1T2G,BC848CDW1T1Ghttp://onsemi.comDual General PurposeTransistorsSOT-363CASE 419BNPN DualsSTYLE 1These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which is(3) (2) (1)designed for low power surface mount applications.FeaturesQ1 Q

NTMFD4C85NPowerPhase, DualN-Channel SO8FL30 V, High Side 25 A / Low Side 49 AFeatures Co-Packaged Power Stage Solution to Minimize Board Spacewww.onsemi.com Minimized Parasitic Inductances Optimized Devices to Reduce Power LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS3.0 mW @ 10 VQ1 Top FETCompliant25 A3

BC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatures Moisture Sensitivity Level: 1www.onsemi.com ESD Rating - Human Body Model: >4000 VESD Rating - Machine Model: >400 V S and NSV Prefix for Automotive and Other Applications Requiring COLLECTOR3Unique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable1 These Devices are Pb-

BC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatureswww.onsemi.com Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: > 4000 VESD Rating - Machine Model: > 400 VCOLLECTOR3 S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASE These Device

BC846BPDW1,BC847BPDW1,BC848CPDW1 SeriesDual General PurposeTransistorshttp://onsemi.comNPN/PNP Duals (Complementary)These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which isSOT-363designed for low power surface mount applications.CASE 419BSTYLE 1Features(3) (2) (1) S Prefix for Automotive and Other Ap

General PurposeTransistorsNPN SiliconBC846ALT1G SeriesFeatures Moisture Sensitivity Level: 1www.onsemi.com ESD Rating - Human Body Model: > 4000 VESD Rating - Machine Model: > 400 VCOLLECTOR S and NSV Prefix for Automotive and Other Applications Requiring3Unique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASE These Device

BC808-25LT1G,SBC808-25LT1G,BC808-40LT1GGeneral PurposeTransistorshttp://onsemi.comPNP SiliconCOLLECTOR3Features AEC-Q101 Qualified and PPAP Capable1 S Prefix for Automotive and Other Applications Requiring UniqueBASESite and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2CompliantEMITTER3MAXIMUM RATINGS

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

BC807-25W, BC807-40WGeneral PurposeTransistorsPNP Siliconhttp://onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualified andCOLLECTORPPAP Capable 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant 1BASE2MAXIMUM RATINGSEMITTERRating Symbol Value UnitColl

BC856ALT1G SeriesGeneral PurposeTransistorsPNP SiliconFeatureshttp://onsemi.com S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101COLLECTORQualified and PPAP Capable3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASE2EMITTERMAXIMUM RATINGS (TA = 25C unless other

BC856B, BC857B, BC858AGeneral PurposeTransistorsPNP SiliconThese transistors are designed for general purpose amplifierwww.onsemi.comapplications. They are housed in the SC-70/SOT-323 which isdesigned for low power surface mount applications.COLLECTOR3Features S and NSV Prefix for Automotive and Other Applications Requiring1Unique Site and Control Change Requirement

BC856BDW1T1G,SBC856BDW1T1G Series,BC857BDW1T1G,SBC857BDW1T1G Series,BC858CDW1T1G Serieswww.onsemi.comDual General PurposeTransistorsPNP DualsSOT-363/SC-88These transistors are designed for general purpose amplifierCASE 419BSTYLE 1applications. They are housed in the SOT-363/SC-88 which isdesigned for low power surface mount applications.(3) (2) (1)Features S

BC807-16L, BC807-25L,BC807-40LGeneral PurposeTransistorsPNP Siliconwww.onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueCOLLECTORSite and Control Change Requirements; AEC-Q101 Qualified and3PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1Compliant BASE2EMITTERMAXIMUM RATINGSRating Symbol Value

BC817-16L, SBC817-16L,BC817-25L, SBC817-25L,BC817-40L, SBC817-40LGeneral PurposeTransistorshttp://onsemi.comNPN SiliconCOLLECTORFeatures 3 S and NSV Prefixes for Automotive and Other ApplicationsRequiring Unique Site and Control Change Requirements; 1BASEAEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2Complian

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

BC856ALT1G SeriesGeneral PurposeTransistorsPNP SiliconFeatureshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantCOLLECTOR31BASEMAXIMUM RATINGS (TA = 25C unless otherwise noted)2EMITTERRating Symbol Value UnitCollector-Emitter Voltage BC856 VCEO -65 VBC857 -45BC858, BC859 -303Collector-Base Voltage BC856 VCBO -80

BC807-16L, BC807-25L,BC807-40LGeneral PurposeTransistorsPNP Siliconwww.onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueCOLLECTORSite and Control Change Requirements; AEC-Q101 Qualified and3PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1Compliant BASE2EMITTERMAXIMUM RATINGSRating Symbol Value

BC847CDXV6T1,BC847CDXV6T5BC848CDXV6T1,BC848CDXV6T5Dual General Purposehttp://onsemi.comTransistorsNPN Duals(3) (2) (1)These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-563 which is designed forQ1 Q2low power surface mount applications. Lead-Free Solder Plating(4) (5) (6)MAXIMUM RATINGSBC847CDXV6T1Rating Symb

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

BC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatures Moisture Sensitivity Level: 1www.onsemi.com ESD Rating - Human Body Model: >4000 VESD Rating - Machine Model: >400 V S and NSV Prefix for Automotive and Other Applications Requiring COLLECTOR3Unique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable1 These Devices are Pb-

BC846BM3T5G,NSVBC846BM3T5GGeneral Purpose TransistorNPN Silicon Moisture Sensitivity Level: 1http://onsemi.com ESD Rating: Human Body Model: >4000 VMachine Model: >400 VCOLLECTOR NSV Prefix for Automotive and Other Applications Requiring3Unique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASE This is a Pb-Free Device2EMI

BC846BDW1T1G,SBC846BDW1T1G,BC847BDW1T1G,SBC847BDW1T1G Series,NSVBC847BDW1T2G,BC848CDW1T1Ghttp://onsemi.comDual General PurposeTransistorsSOT-363CASE 419BNPN DualsSTYLE 1These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which is(3) (2) (1)designed for low power surface mount applications.FeaturesQ1 Q

BC807-16L, BC807-25L,BC807-40LGeneral PurposeTransistorsPNP Siliconwww.onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueCOLLECTORSite and Control Change Requirements; AEC-Q101 Qualified and3PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1Compliant BASE2EMITTERMAXIMUM RATINGSRating Symbol Value

BC856B, BC857B, BC858AGeneral PurposeTransistorsPNP SiliconThese transistors are designed for general purpose amplifierwww.onsemi.comapplications. They are housed in the SC-70/SOT-323 which isdesigned for low power surface mount applications.COLLECTOR3Features S and NSV Prefix for Automotive and Other Applications Requiring1Unique Site and Control Change Requirement

BC817-16L, SBC817-16L,BC817-25L, SBC817-25L,BC817-40L, SBC817-40LGeneral PurposeTransistorswww.onsemi.comNPN SiliconCOLLECTORFeatures 3 S and NSV Prefixes for Automotive and Other ApplicationsRequiring Unique Site and Control Change Requirements; 1BASEAEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2Compliant

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

BC807-16L, BC807-25L,BC807-40LGeneral PurposeTransistorsPNP Siliconwww.onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueCOLLECTORSite and Control Change Requirements; AEC-Q101 Qualified and3PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1Compliant BASE2EMITTERMAXIMUM RATINGSRating Symbol Value

BC846ALT1G Series,SBC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatureshttp://onsemi.com Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: >4000 VCOLLECTORESD Rating - Machine Model: >400 V3 AEC-Q101 Qualified and PPAP Capable1 S Prefix for Automotive and Other Applications Requiring UniqueBASESite and Control Change Requirements

BC847BPDXV6,SBC847BPDXV6NPN/PNP Dual GeneralPurpose TransistorThis transistor is designed for general purpose amplifierapplications. It is housed in the SOT-563 which is designed for lowhttp://onsemi.compower surface mount applications.Features(3) (2) (1) S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualif

BC847ATT1, BC847BTT1,BC847CTT1General PurposeTransistorsNPN Siliconhttp://onsemi.comThese transistors are designed for general purpose amplifierapplications. They are housed in the SC-75/SOT-416 package whichCOLLECTORis designed for low power surface mount applications. 3Features1 NSV Prefix for Automotive and Other Applications Requiring BASEUnique Site and Control

BC817-40W45 V, 0.5 A, GeneralPurpose NPN TransistorON Semiconductors BC817-40W is a General Purpose NPNTransistor that is housed in the SC-70/SOT-323 package.Featureswww.onsemi.com AEC-Q101 Qualified and Consult Factory for PPAP Capable This Device is Pb-Free, Halogen Free/BFR Free and is RoHSCOLLECTORCompliant31BASEMAXIMUM RATINGS (TA = 25C)Rating Symbo

BC818-40L, NSVBC818-40LGeneral PurposeTransistorsNPN Siliconhttp://onsemi.comFeatures NSV Prefix for Automotive and Other Applications RequiringCOLLECTORUnique Site and Control Change Requirements; AEC-Q1013Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASE2MAXIMUM RATINGSEMITTERRating Symbol Value Uni

BC846BPDW1,BC847BPDW1,BC848CPDW1 SeriesDual General PurposeTransistorshttp://onsemi.comNPN/PNP Duals (Complementary)These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which isSOT-363designed for low power surface mount applications.CASE 419BSTYLE 1Features(3) (2) (1) S Prefix for Automotive and Other Ap

BC846BM3T5G,NSVBC846BM3T5GGeneral Purpose TransistorNPN Silicon Moisture Sensitivity Level: 1http://onsemi.com ESD Rating: Human Body Model: >4000 VMachine Model: >400 VCOLLECTOR NSV Prefix for Automotive and Other Applications Requiring3Unique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASE This is a Pb-Free Device2EMI

BC846BPDW1,BC847BPDW1,BC848CPDW1 SeriesDual General PurposeTransistorswww.onsemi.comNPN/PNP Duals (Complementary)These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which isSOT-363designed for low power surface mount applications.CASE 419BSTYLE 1Features(3) (2) (1) S Prefix for Automotive and Other Appli

BC817-16L, SBC817-16L,BC817-25L, SBC817-25L,BC817-40L, SBC817-40LGeneral PurposeTransistorshttp://onsemi.comNPN SiliconCOLLECTORFeatures 3 S and NSV Prefixes for Automotive and Other ApplicationsRequiring Unique Site and Control Change Requirements; 1BASEAEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2Complian

BC856BDW1T1G,SBC856BDW1T1G Series,BC857BDW1T1G,SBC857BDW1T1G Series,BC858CDW1T1G SeriesPreferred Deviceshttp://onsemi.comDual General PurposeTransistorsPNP DualsSOT-363/SC-88CASE 419BSTYLE 1These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which is(3) (2) (1)designed for low power surface mount applicat

NTMFD4C86NPowerPhase, DualN-Channel SO8FL30 V, High Side 20 A / Low Side 32 AFeatures Co-Packaged Power Stage Solution to Minimize Board Spacewww.onsemi.com Minimized Parasitic Inductances Optimized Devices to Reduce Power LossesV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS5.4 mW @ 10 VCompliant Q1 Top FET20 A30

FDMC8651General DescriptionN-Channel Power Trench MOSFETThis device has been designed specifically to improve the 30 V, 20 A, 6.1 mefficiency of DC/DC converters. Using new techniques in FeaturesMOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching Max rDS(on) = 6.1 m at VGS = 4.5 V, ID = 15 Alosses. Low g

BC846ALT1 SeriesBC846, BC847 and BC848 are Preferred DevicesGeneral PurposeTransistorsNPN SiliconFeatureshttp://onsemi.com Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: >4000 VCOLLECTOR3ESD Rating - Machine Model: >400 V Pb-Free Packages are Available1BASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERCollector-Emitter Voltage VCEO V

EFC8811R Power MOSFET for 1-Cell Lithium-ion Battery Protection 12V, 3.2m, 27A, Dual N-Channel www.onsemi.com This Power MOSFET features a low on-state resistance. This device is suitable for applications such as power switches of portable machines. Best suited for 1-cell lithium-ion battery applications. VSSS RSS(on) Max IS Max 3.2m@ 4.5V Features 3.2m@ 4.0V

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

BC817-16LT1G,BC817-25LT1G,BC817-40LT1GGeneral PurposeTransistorshttp://onsemi.comNPN SiliconCOLLECTORFeatures 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASE2EMITTERMAXIMUM RATINGSRating Symbol Value UnitCollector - Emitter Voltage VCEO 45 V3Collector - Base Voltage VCBO 50 VEmitter - Base Voltage VEBO 5.0 V12Collect

BC808-25LT1G,BC808-40LT1GGeneral PurposeTransistorsPNP Siliconhttp://onsemi.comFeaturesCOLLECTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 3Compliant1BASE2EMITTERMAXIMUM RATINGSRating Symbol Value UnitCollector - Emitter Voltage VCEO -25 V3Collector - Base Voltage VCBO -30 V1Emitter - Base Voltage VEBO -5.0 V2Collector Current -

BC818-40L, NSVBC818-40LGeneral PurposeTransistorsNPN Siliconhttp://onsemi.comFeatures NSV Prefix for Automotive and Other Applications RequiringCOLLECTORUnique Site and Control Change Requirements; AEC-Q1013Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASE2MAXIMUM RATINGSEMITTERRating Symbol Value Uni

BC846, BC847, BC848General PurposeTransistorsNPN SiliconThese transistors are designed for general purpose amplifierwww.onsemi.comapplications. They are housed in the SC-70/SOT-323 which isdesigned for low power surface mount applications.COLLECTORFeatures3 S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC

BC856B, BC857B, BC858AGeneral PurposeTransistorsPNP SiliconThese transistors are designed for general purpose amplifierwww.onsemi.comapplications. They are housed in the SC-70/SOT-323 which isdesigned for low power surface mount applications.COLLECTOR3Features S and NSV Prefix for Automotive and Other Applications Requiring1Unique Site and Control Change Requirement

EMT1DXV6Dual General PurposeTransistorPNP DualThis transistor is designed for general purpose amplifierhttp://onsemi.comapplications. It is housed in the SOT-563 which is designed for lowpower surface mount applications.(3) (2) (1)Features Lead-Free Solder Plating Low VCE(SAT), t0.5 VQ1 Q2 NSV Prefix for Automotive and Other Applications RequiringUnique Site

BC817-16L, SBC817-16L,BC817-25L, SBC817-25L,BC817-40L, SBC817-40LGeneral PurposeTransistorshttp://onsemi.comNPN SiliconCOLLECTORFeatures 3 S and NSV Prefixes for Automotive and Other ApplicationsRequiring Unique Site and Control Change Requirements; 1BASEAEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2Complian

BC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatureswww.onsemi.com Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: > 4000 VESD Rating - Machine Model: > 400 VCOLLECTOR3 S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASE These Device

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconSBC847BLT1G Moisture Sensitivity Level: 1 ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V3 We declare that the material of product compliance with RoHS requirements.1MAXIMUM RATINGS2Rating Symbol Value UnitSOT23CollectorEmitter Voltage VCEO 45 Vdc3COLLECT

FDMC8010MOSFET N-Channel,POWERTRENCH)30 V, 75 A, 1.3 mWGeneral Descriptionwww.onsemi.comThis N-Channel MOSFET is produced using ON Semiconductorsadvanced POWERTRENCH process that has been especially tailoredPin 1Pin 1SSto minimize the on-state resistance. This device is well suited forSGapplications where ultra low rDS(on) is required in small spaces such as

BC857BTT1, BC857CTT1Preferred DevicesGeneral Purpose TransistorPNP SiliconThese transistors are designed for general purpose amplifierapplications. They are housed in the SOT-416/SC-75 which isdesigned for low power surface mount applications.http://onsemi.comFeaturesCOLLECTOR Pb-Free Package is Available*31BASEMAXIMUM RATINGS (TA = 25C)Rating Symbol Max Unit

MOSFET - Dual NChannel,Asymmetric,POWERTRENCH) PowerClip 25 VFDPC8016Swww.onsemi.comGeneral DescriptionELECTRICAL CONNECTIONThis device includes two specialized N-Channel MOSFETs in adual package. The switch node has been internally connected to enableeasy placement and routing of synchronous buck converters. Thecontrol MOSFET (Q1) and synchronous SyncFET (Q2) have b

BC846BPDW1,BC847BPDW1,BC848CPDW1 SeriesDual General PurposeTransistorshttp://onsemi.comNPN/PNP Duals (Complementary)These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which isSOT-363designed for low power surface mount applications.CASE 419BSTYLE 1Features(3) (2) (1) S Prefix for Automotive and Other Ap

BC817-16LT1G,BC817-25LT1G,BC817-40LT1GGeneral PurposeTransistorshttp://onsemi.comNPN SiliconCOLLECTORFeatures 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASE2EMITTERMAXIMUM RATINGSRating Symbol Value UnitCollector - Emitter Voltage VCEO 45 V3Collector - Base Voltage VCBO 50 VEmitter - Base Voltage VEBO 5.0 V12Collect

BC846, BC847, BC848General PurposeTransistorsNPN SiliconThese transistors are designed for general purpose amplifierwww.onsemi.comapplications. They are housed in the SC-70/SOT-323 which isdesigned for low power surface mount applications.COLLECTORFeatures3 S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC

BC846BM3T5GGeneral Purpose TransistorNPN Silicon Moisture Sensitivity Level: 1 ESD Rating: Human Body Model: >4000 VMachine Model: >400 Vhttp://onsemi.com This is a Pb-Free DeviceCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit 1BASECollector-Emitter Voltage VCEO 65 Vdc2Collector-Base Voltage VCBO 80 VdcEMITTEREmitter-Base Voltage VEBO 6.0 VdcCollec

BC856BM3, NSVBC856BM3General Purpose TransistorPNP SiliconThis transistor is designed for general purpose amplifierapplications. It is housed in the SOT-723 which is designed for lowpower surface mount applications.http://onsemi.comFeaturesCOLLECTOR NSV Prefix for Automotive and Other Applications Requiring3Unique Site and Control Change Requirements; AEC-Q101Qualifie

BC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatures Moisture Sensitivity Level: 1www.onsemi.com ESD Rating - Human Body Model: >4000 VESD Rating - Machine Model: >400 V S and NSV Prefix for Automotive and Other Applications Requiring COLLECTOR3Unique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable1 These Devices are Pb-

BC846 / BC847 / BC848 / BC850NPN Epitaxial Silicon TransistorFeatures3 Switching and Amplifier Applications Suitable for Automatic Insertion in Thick and Thin-film Circuits Low Noise: BC8502 Complement to BC856, BC857, BC858, BC859, and BC860SOT-2311. Base 2. Emitter 3. CollectorOrdering Information(1)Part Number Marking Package Packing MethodBC846AMTF 8A

BC817-16L, SBC817-16L,BC817-25L, SBC817-25L,BC817-40L, SBC817-40LGeneral PurposeTransistorshttp://onsemi.comNPN SiliconCOLLECTORFeatures 3 S and NSV Prefixes for Automotive and Other ApplicationsRequiring Unique Site and Control Change Requirements; 1BASEAEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2Complian

BC846ALT1 SeriesBC846, BC847 and BC848 are Preferred DevicesGeneral PurposeTransistorsNPN SiliconFeatureshttp://onsemi.com Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: >4000 VCOLLECTOR3ESD Rating - Machine Model: >400 V Pb-Free Packages are Available1BASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERCollector-Emitter Voltage VCEO V

BC856BDW1T1G,SBC856BDW1T1G Series,BC857BDW1T1G,SBC857BDW1T1G Series,BC858CDW1T1G SeriesPreferred Deviceshttp://onsemi.comDual General PurposeTransistorsPNP DualsSOT-363/SC-88CASE 419BSTYLE 1These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which is(3) (2) (1)designed for low power surface mount applicat

DATA SHEETwww.onsemi.comGeneral PurposeCOLLECTORTransistors 3PNP Silicon1BASEBC807-16L, BC807-25L,2BC807-40LEMITTERFeatures S Prefix for Automotive and Other Applications Requiring Unique3Site and Control Change Requirements; AEC-Q101 Qualified andPPAP Capable1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2CompliantSOT-23CASE 318

BC818-40L, NSVBC818-40LGeneral PurposeTransistorsNPN Siliconwww.onsemi.comFeatures NSV Prefix for Automotive and Other Applications RequiringCOLLECTORUnique Site and Control Change Requirements; AEC-Q1013Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASE2MAXIMUM RATINGSEMITTERRating Symbol Value Unit

BC807-25W, BC807-40WGeneral PurposeTransistorsPNP Siliconhttp://onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualified andCOLLECTORPPAP Capable 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant 1BASE2MAXIMUM RATINGSEMITTERRating Symbol Value UnitColl

BC856ALT1G SeriesGeneral PurposeTransistorsPNP SiliconFeatureswww.onsemi.com S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101COLLECTORQualified and PPAP Capable3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS (TA = 25C unless otherwise noted)2

BC817-16L, SBC817-16L,BC817-25L, SBC817-25L,BC817-40L, SBC817-40LGeneral PurposeTransistorswww.onsemi.comNPN SiliconCOLLECTORFeatures 3 S and NSV Prefixes for Automotive and Other ApplicationsRequiring Unique Site and Control Change Requirements; 1BASEAEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2Compliant

BC817-40W45 V, 0.5 A, GeneralPurpose NPN TransistorON Semiconductors BC817-40W is a General Purpose NPNTransistor that is housed in the SC-70/SOT-323 package.Featureswww.onsemi.com NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101COLLECTORQualified and PPAP Capable3 This Device is Pb-Free, Halogen Fre

BC847ATT1, BC847BTT1,BC847CTT1General PurposeTransistorsNPN Siliconhttp://onsemi.comThese transistors are designed for general purpose amplifierapplications. They are housed in the SC-75/SOT-416 package whichCOLLECTORis designed for low power surface mount applications. 3Features1 NSV Prefix for Automotive and Other Applications Requiring BASEUnique Site and Control

BC846, BC847, BC848SeriesGeneral PurposeTransistorsNPN Siliconhttp://onsemi.comThese transistors are designed for general purpose amplifierapplications. They are housed in the SC-70/SOT-323 which isCOLLECTORdesigned for low power surface mount applications.3Features1 Pb-Free Packages are AvailableBASE2EMITTERMAXIMUM RATINGS3Rating Symbol Value UnitSC-7

BC846ALT1 SeriesBC846, BC847 and BC848 are Preferred DevicesGeneral PurposeTransistorsNPN SiliconFeatureshttp://onsemi.com Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: >4000 VCOLLECTOR3ESD Rating - Machine Model: >400 V Pb-Free Packages are Available1BASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERCollector-Emitter Voltage VCEO V

BC847BPDXV6,SBC847BPDXV6NPN/PNP Dual GeneralPurpose TransistorThis transistor is designed for general purpose amplifierapplications. It is housed in the SOT-563 which is designed for lowhttp://onsemi.compower surface mount applications.Features(3) (2) (1) S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualif

BC858CDXV6T1,BC858CDXV6T5Dual General PurposeTransistorPNP Dualhttp://onsemi.comThis transistor is designed for general purpose amplifierapplications. It is housed in the SOT-563 which is designed for low(3) (2) (1)power surface mount applications.FeaturesQ1 Q2 These are Pb-Free DevicesMAXIMUM RATINGS(4) (5) (6)Rating Symbol Value UnitCollector -Emitter Voltag

BC846, BC847, BC848General PurposeTransistorsNPN SiliconThese transistors are designed for general purpose amplifierwww.onsemi.comapplications. They are housed in the SC-70/SOT-323 which isdesigned for low power surface mount applications.COLLECTORFeatures3 S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC

BC856BDW1T1G,SBC856BDW1T1G Series,BC857BDW1T1G,SBC857BDW1T1G Series,BC858CDW1T1G SeriesPreferred Deviceshttp://onsemi.comDual General PurposeTransistorsPNP DualsSOT-363/SC-88CASE 419BSTYLE 1These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which is(3) (2) (1)designed for low power surface mount applicat

FDMC8010DCMOSFET N-Channel, DUAL COOL) 33,POWERTRENCH)30 V, 157 A, 1.28 mWwww.onsemi.comGeneral DescriptionThis N-Channel MOSFET is produced using ON Semiconductors DDDDadvanced POWERTRENCH process. Advancements in both siliconand DUAL COOL package technologies have been combined to offerGSthe lowest rDS(on) while maintaining excellent switching performanceS

BC807-16L, BC807-25L,BC807-40LGeneral PurposeTransistorsPNP Siliconwww.onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueCOLLECTORSite and Control Change Requirements; AEC-Q101 Qualified and3PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1Compliant BASE2EMITTERMAXIMUM RATINGSRating Symbol Value

BC856B, BC857B, BC858AGeneral PurposeTransistorsPNP SiliconThese transistors are designed for general purpose amplifierwww.onsemi.comapplications. They are housed in the SC-70/SOT-323 which isdesigned for low power surface mount applications.COLLECTOR3Features S and NSV Prefix for Automotive and Other Applications Requiring1Unique Site and Control Change Requirement

BC856ALT1G SeriesGeneral PurposeTransistorsPNP SiliconFeatureswww.onsemi.com S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101COLLECTORQualified and PPAP Capable3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS (TA = 25C unless otherwise noted)2

BC847CDXV6T1G,BC847CDXV6T5G,BC848CDXV6T1GDual General PurposeTransistorshttp://onsemi.comNPN Duals(3) (2) (1)These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-563 which is designed forlow power surface mount applications.Q1 Q2Features These are Pb-Free Devices(4) (5) (6)BC847CDXV6T1MAXIMUM RATINGSRating Symb

BC857BTT1GGeneral Purpose TransistorPNP SiliconThese transistors are designed for general purpose amplifierapplications. They are housed in the SOT-416/SC-75 which isdesigned for low power surface mount applications.http://onsemi.comFeaturesCOLLECTOR NSV Prefix for Automotive and Other Applications Requiring3Unique Site and Control Change Requirements; AEC-Q101Qualifi

BC847ATT1, BC847BTT1,BC847CTT1General PurposeTransistorsNPN Siliconhttp://onsemi.comThese transistors are designed for general purpose amplifierapplications. They are housed in the SC-75/SOT-416 package whichCOLLECTORis designed for low power surface mount applications. 3Features1 Pb-Free Packages are Available* BASE2EMITTERMAXIMUM RATINGS (TA = 25C)Rating S

BC856BWT1 Series,BC857BWT1 Series,BC858AWT1 SeriesGeneral PurposeTransistorshttp://onsemi.comPNP SiliconCOLLECTOR3These transistors are designed for general purpose amplifierapplications. They are housed in the SC--70/SOT--323 which isdesigned for low power surface mount applications. 1BASEFeatures These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS2

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

BC856B, BC857B, BC858AGeneral PurposeTransistorsPNP SiliconThese transistors are designed for general purpose amplifierwww.onsemi.comapplications. They are housed in the SC-70/SOT-323 which isdesigned for low power surface mount applications.COLLECTOR3Features S and NSV Prefix for Automotive and Other Applications Requiring1Unique Site and Control Change Requirement

BC847ATT1, BC847BTT1,BC847CTT1General PurposeTransistorsNPN Siliconhttp://onsemi.comThese transistors are designed for general purpose amplifierapplications. They are housed in the SC-75/SOT-416 package whichCOLLECTORis designed for low power surface mount applications. 3Features1BASE Pb-Free Packages are Available*2EMITTERMAXIMUM RATINGS (TA = 25C)Rating

BC807-16L, BC807-25L,BC807-40LGeneral PurposeTransistorsPNP Siliconwww.onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueCOLLECTORSite and Control Change Requirements; AEC-Q101 Qualified and3PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1Compliant BASE2EMITTERMAXIMUM RATINGSRating Symbol Value

BC846BM3T5G,NSVBC846BM3T5GGeneral Purpose TransistorNPN Silicon Moisture Sensitivity Level: 1http://onsemi.com ESD Rating: Human Body Model: >4000 VMachine Model: >400 VCOLLECTOR NSV Prefix for Automotive and Other Applications Requiring3Unique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASE This is a Pb-Free Device2EMI

BC856BDW1T1G,SBC856BDW1T1G Series,BC857BDW1T1G,SBC857BDW1T1G Series,BC858CDW1T1G SeriesPreferred Deviceshttp://onsemi.comDual General PurposeTransistorsPNP DualsSOT-363/SC-88CASE 419BSTYLE 1These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which is(3) (2) (1)designed for low power surface mount applicat

BC847CDXV6T1G,SBC847CDXV6T1G,BC847CDXV6T5G,BC848CDXV6T1GDual General Purposehttp://onsemi.comTransistors(3) (2) (1)NPN DualsThese transistors are designed for general purpose amplifierQ1 Q2applications. They are housed in the SOT-563 which is designed forlow power surface mount applications.(4) (5) (6)Features AEC-Q101 Qualified and PPAP CapableBC847CDXV6T1

BC846BDW1T1G,SBC846BDW1T1G,BC847BDW1T1G,SBC847BDW1T1G Series,NSVBC847BDW1T2G,BC848CDW1T1Ghttp://onsemi.comDual General PurposeTransistorsSOT-363CASE 419BNPN DualsSTYLE 1These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which is(3) (2) (1)designed for low power surface mount applications.FeaturesQ1 Q

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

BC846ALT1 SeriesBC846, BC847 and BC848 are Preferred DevicesGeneral PurposeTransistorsNPN SiliconFeatureshttp://onsemi.com Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: >4000 VCOLLECTOR3ESD Rating - Machine Model: >400 V Pb-Free Packages are Available1BASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERCollector-Emitter Voltage VCEO V

BC847BM3T5GPreferred Device General Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifierapplications. They are housed in the SOT-723 package which isdesigned for low power surface mount applications.http://onsemi.com This is a Pb-Free DeviceCOLLECTOR3MAXIMUM RATINGS (TA = 25C)Rating Symbol Max Unit1Collector-Emitter Voltage V

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

BC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatures Moisture Sensitivity Level: 1www.onsemi.com ESD Rating - Human Body Model: >4000 VESD Rating - Machine Model: >400 V S and NSV Prefix for Automotive and Other Applications Requiring COLLECTOR3Unique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable1 These Devices are Pb-

BC846BDW1T1G,SBC846BDW1T1G,BC847BDW1T1G,SBC847BDW1T1G Series,NSVBC847BDW1T2G,BC848CDW1T1Ghttp://onsemi.comDual General PurposeTransistorsSOT-363CASE 419BNPN DualsSTYLE 1These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which is(3) (2) (1)designed for low power surface mount applications.FeaturesQ1 Q

BC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatures Moisture Sensitivity Level: 1www.onsemi.com ESD Rating - Human Body Model: >4000 VESD Rating - Machine Model: >400 V S and NSV Prefix for Automotive and Other Applications Requiring COLLECTOR3Unique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable1 These Devices are Pb-

BC807-16LT1G,BC807-25LT1G,BC807-40LT1GGeneral PurposeTransistorshttp://onsemi.comPNP SiliconCOLLECTOR3Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASE2MAXIMUM RATINGSEMITTERRating Symbol Value UnitCollector - Emitter Voltage VCEO -45 V3Collector - Base Voltage VCBO -50 VEmitter - Base Voltage VEBO -5.0 V12Col

BC846BDW1, BC847BDW1,BC848CDW1Dual General PurposeTransistorsNPN Dualswww.onsemi.comThese transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which isdesigned for low power surface mount applications.Features SOT-363CASE 419B S and NSV Prefixes for Automotive and Other ApplicationsSTYLE 1Requiring Unique Site and

BC856BM3T5GPreferred DevicesGeneral Purpose TransistorPNP SiliconThis transistor is designed for general purpose amplifierapplications. It is housed in the SOT-723 which is designed for lowpower surface mount applications.http://onsemi.com This is a Pb-Free DeviceCOLLECTORMAXIMUM RATINGS3Rating Symbol Value Unit1BASECollector-Emitter Voltage VCEO -65 VCollecto

BC846, BC847, BC848SeriesGeneral PurposeTransistorsNPN Siliconhttp://onsemi.comThese transistors are designed for general purpose amplifierapplications. They are housed in the SC-70/SOT-323 which isCOLLECTORdesigned for low power surface mount applications.3Features1 Pb-Free Packages are AvailableBASE2EMITTERMAXIMUM RATINGS3Rating Symbol Value UnitSC-7

BC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatures Moisture Sensitivity Level: 1www.onsemi.com ESD Rating - Human Body Model: >4000 VESD Rating - Machine Model: >400 V S and NSV Prefix for Automotive and Other Applications Requiring COLLECTOR3Unique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable1 These Devices are Pb-

BC807-16L, BC807-25L,BC807-40LGeneral PurposeTransistorsPNP Siliconwww.onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueCOLLECTORSite and Control Change Requirements; AEC-Q101 Qualified and3PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1Compliant BASE2EMITTERMAXIMUM RATINGSRating Symbol Value

BC856ALT1G SeriesGeneral PurposeTransistorsPNP SiliconFeatureshttp://onsemi.com S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101COLLECTORQualified and PPAP Capable3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASE2EMITTERMAXIMUM RATINGS (TA = 25C unless other

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

BC817-16L, SBC817-16L,BC817-25L, SBC817-25L,BC817-40L, SBC817-40LGeneral PurposeTransistorshttp://onsemi.comNPN SiliconCOLLECTORFeatures 3 S and NSV Prefixes for Automotive and Other ApplicationsRequiring Unique Site and Control Change Requirements; 1BASEAEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2Complian

BC846, BC847, BC848SeriesGeneral PurposeTransistorsNPN Siliconhttp://onsemi.comThese transistors are designed for general purpose amplifierapplications. They are housed in the SC-70/SOT-323 which isCOLLECTORdesigned for low power surface mount applications.3Features1 Pb-Free Packages are AvailableBASE2EMITTERMAXIMUM RATINGS3Rating Symbol Value UnitSC-7

BC847CDXV6T1G,SBC847CDXV6T1G,BC847CDXV6T5G,BC848CDXV6T1GDual General Purposehttp://onsemi.comTransistors(3) (2) (1)NPN DualsThese transistors are designed for general purpose amplifierQ1 Q2applications. They are housed in the SOT-563 which is designed forlow power surface mount applications.(4) (5) (6)Features AEC-Q101 Qualified and PPAP CapableBC847CDXV6T1

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

BC856BDW1T1G,SBC856BDW1T1G Series,BC857BDW1T1G,SBC857BDW1T1G Series,BC858CDW1T1G SeriesPreferred Deviceshttp://onsemi.comDual General PurposeTransistorsPNP DualsSOT-363/SC-88CASE 419BSTYLE 1These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which is(3) (2) (1)designed for low power surface mount applicat

BC807-25W, BC807-40WGeneral PurposeTransistorsPNP Siliconhttp://onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualified andCOLLECTORPPAP Capable 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant 1BASE2MAXIMUM RATINGSEMITTERRating Symbol Value UnitColl

BC846, BC847, BC848General PurposeTransistorsNPN SiliconThese transistors are designed for general purpose amplifierwww.onsemi.comapplications. They are housed in the SC-70/SOT-323 which isdesigned for low power surface mount applications.COLLECTORFeatures3 S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC

BC807-16L, BC807-25L,BC807-40LGeneral PurposeTransistorsPNP Siliconwww.onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueCOLLECTORSite and Control Change Requirements; AEC-Q101 Qualified and3PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1Compliant BASE2EMITTERMAXIMUM RATINGSRating Symbol Value

BC846, BC847, BC848SeriesGeneral PurposeTransistorsNPN Siliconhttp://onsemi.comThese transistors are designed for general purpose amplifierapplications. They are housed in the SC-70/SOT-323 which isCOLLECTORdesigned for low power surface mount applications.3Features1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSBASECompliant2EMITTERMAXIMUM

BC817-16L, SBC817-16L,BC817-25L, SBC817-25L,BC817-40L, SBC817-40LGeneral PurposeTransistorshttp://onsemi.comNPN SiliconCOLLECTORFeatures 3 S and NSV Prefixes for Automotive and Other ApplicationsRequiring Unique Site and Control Change Requirements; 1BASEAEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2Complian