Биполярный транзистор C912 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: C912
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.4 W
Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V
Макcимальный постоянный ток коллектора (Ic): 0.05 A
Предельная температура PN-перехода (Tj): 175 °C
Статический коэффициент передачи тока (hfe): 50
Корпус транзистора: TO46
C912 Datasheet (PDF)
drc9124x.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRC9124XSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA9124XDRC5124X in SSMini3 type package Features Package High forward current transfer ratio hFE Code Low collector-emitter saturation voltage VCE(sat) SSMini3-F3-B Contributes to miniaturization of sets, reduction of
drc9124e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRC9124ESilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA9124EDRC5124E in SSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini3-F3-B Eco-friendly Haloge
drc9123e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRC9123ESilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA9123EDRC5123E in SSMini3 type package Features Package Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package SSMini3-F3-B Pin Name Packaging 1: Base 2:
drc9123j.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRC9123JSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA9123JDRC5123J in SSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini3-F3-B Eco-friendly Halogen-
drc9124t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRC9124TSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA9124TDRC5124T in SSMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SSMini3-F3-B Contributes to miniaturiza
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050