Биполярный транзистор CMPT3640 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: CMPT3640
Маркировка: C2J
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.35 W
Макcимально допустимое напряжение коллектор-база (Ucb): 12 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 12 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 4 V
Макcимальный постоянный ток коллектора (Ic): 0.05 A
Предельная температура PN-перехода (Tj): 175 °C
Граничная частота коэффициента передачи тока (ft): 300 MHz
Ёмкость коллекторного перехода (Cc): 3.5 pf
Статический коэффициент передачи тока (hfe): 30
Корпус транзистора: SOT23
CMPT3640 Datasheet (PDF)
cmpt3820.pdf
CMPT3820www.centralsemi.comSURFACE MOUNTVERY LOW VCE(SAT)DESCRIPTION:NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CMPT3820 is a very low VCE(SAT) NPN Transistor, designed forapplications where size and efficiency are primerequirements. Packaged in an industry standard SOT-23, this device brings updated electrical specifications and characteristics suitable for the most
cmpt3904 cmpt3906.pdf
CMPT3904 CMPT3904G* NPNCMPT3906 CMPT3906G* PNPwww.centralsemi.comSURFACE MOUNTDESCRIPTION:COMPLEMENTARYThese CENTRAL SEMICONDUCTOR devices are SILICON TRANSISTORScomplementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose amplifier and switching applications.MARKING COD
cmpt3904e cmpt3906e.pdf
CMPT3904E NPNCMPT3906E PNPwww.centralsemi.comENHANCED SPECIFICATIONDESCRIPTION:SURFACE MOUNT COMPLEMENTARYThe CENTRAL SEMICONDUCTOR CMPT3904E and SILICON TRANSISTORSCMPT3906E are Enhanced versions of the CMPT3904 and CMPT3906 complementary switching transistors in a SOT-23 surface mount package, designed for small signal switching applications, interface circuit & driver
cmpt3410.pdf
CMPT3410www.centralsemi.comSURFACE MOUNTLOW VCE(SAT)DESCRIPTION:NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CMPT3410 type is a NPN Low VCE(SAT) silicon transistor manufactured by the epitaxial planar process and epoxy molded in an SOT-23 surface mount package. This device is designed for battery driven, handheld devices requiring high current and Low VCE(SAT).MARKING
cmpt3904e.pdf
CMPT3904E NPNCMPT3906E PNPwww.centralsemi.comENHANCED SPECIFICATIONDESCRIPTION:SURFACE MOUNT COMPLEMENTARYThe CENTRAL SEMICONDUCTOR CMPT3904E and SILICON TRANSISTORSCMPT3906E are Enhanced versions of the CMPT3904 and CMPT3906 complementary switching transistors in a SOT-23 surface mount package, designed for small signal switching applications, interface circuit & driver
cmpt3906e.pdf
CMPT3904E NPNCMPT3906E PNPwww.centralsemi.comENHANCED SPECIFICATIONDESCRIPTION:SURFACE MOUNT COMPLEMENTARYThe CENTRAL SEMICONDUCTOR CMPT3904E and SILICON TRANSISTORSCMPT3906E are Enhanced versions of the CMPT3904 and CMPT3906 complementary switching transistors in a SOT-23 surface mount package, designed for small signal switching applications, interface circuit & driver
Другие транзисторы... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , BD777 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
Список транзисторов
Обновления
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