Биполярный транзистор CMPT3646 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: CMPT3646
Маркировка: C2R
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.35 W
Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 15 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.3 A
Предельная температура PN-перехода (Tj): 175 °C
Граничная частота коэффициента передачи тока (ft): 350 MHz
Ёмкость коллекторного перехода (Cc): 5 pf
Статический коэффициент передачи тока (hfe): 15
Корпус транзистора: SOT23
CMPT3646 Datasheet (PDF)
cmpt3820.pdf
CMPT3820www.centralsemi.comSURFACE MOUNTVERY LOW VCE(SAT)DESCRIPTION:NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CMPT3820 is a very low VCE(SAT) NPN Transistor, designed forapplications where size and efficiency are primerequirements. Packaged in an industry standard SOT-23, this device brings updated electrical specifications and characteristics suitable for the most
cmpt3904 cmpt3906.pdf
CMPT3904 CMPT3904G* NPNCMPT3906 CMPT3906G* PNPwww.centralsemi.comSURFACE MOUNTDESCRIPTION:COMPLEMENTARYThese CENTRAL SEMICONDUCTOR devices are SILICON TRANSISTORScomplementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose amplifier and switching applications.MARKING COD
cmpt3904e cmpt3906e.pdf
CMPT3904E NPNCMPT3906E PNPwww.centralsemi.comENHANCED SPECIFICATIONDESCRIPTION:SURFACE MOUNT COMPLEMENTARYThe CENTRAL SEMICONDUCTOR CMPT3904E and SILICON TRANSISTORSCMPT3906E are Enhanced versions of the CMPT3904 and CMPT3906 complementary switching transistors in a SOT-23 surface mount package, designed for small signal switching applications, interface circuit & driver
cmpt3410.pdf
CMPT3410www.centralsemi.comSURFACE MOUNTLOW VCE(SAT)DESCRIPTION:NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CMPT3410 type is a NPN Low VCE(SAT) silicon transistor manufactured by the epitaxial planar process and epoxy molded in an SOT-23 surface mount package. This device is designed for battery driven, handheld devices requiring high current and Low VCE(SAT).MARKING
cmpt3904e.pdf
CMPT3904E NPNCMPT3906E PNPwww.centralsemi.comENHANCED SPECIFICATIONDESCRIPTION:SURFACE MOUNT COMPLEMENTARYThe CENTRAL SEMICONDUCTOR CMPT3904E and SILICON TRANSISTORSCMPT3906E are Enhanced versions of the CMPT3904 and CMPT3906 complementary switching transistors in a SOT-23 surface mount package, designed for small signal switching applications, interface circuit & driver
cmpt3906e.pdf
CMPT3904E NPNCMPT3906E PNPwww.centralsemi.comENHANCED SPECIFICATIONDESCRIPTION:SURFACE MOUNT COMPLEMENTARYThe CENTRAL SEMICONDUCTOR CMPT3904E and SILICON TRANSISTORSCMPT3906E are Enhanced versions of the CMPT3904 and CMPT3906 complementary switching transistors in a SOT-23 surface mount package, designed for small signal switching applications, interface circuit & driver
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Список транзисторов
Обновления
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