D115 datasheet и подбор замены

 0.1. Size:83K  sanyo
 2sd1153.pdf 

Ordering number 828D PNP/NPN Epitaxial Planar Silicon Darlington Tranasistors 2SB865/2SD1153 Drivers Applications Applications Package Dimensions Relay drivers, hammer drivers, lamp drivers, motor unit mm drivers. 2006A [2SB865/2SD1153] Features High DC current gain (4000 or more). Large current capacity and wide ASO. Low saturation voltage. EIAJ SC-51 B Base

 0.2. Size:77K  sanyo
 2sd1159.pdf 

Ordering number EN837E NPN Triple Diffused Planar Silicon Transistor 2SD1159 TV Horizontal Deflection Output, High-Current Switching Applications Features Package Dimensions Capable of efficient drive with small internal loss due unit mm to excellent tf. 2010C [2SD1159] 10.2 4.5 3.6 5.1 1.3 1.2 1 Base 0.8 0.4 2 Collector 1 2 3 3 Emitter JEDEC TO-220AB 2.55 2.

 0.3. Size:110K  onsemi
 ntjd1155l.pdf 

NTJD1155L Power MOSFET 8 V, +1.3 A, High Side Load Switch with Level-Shift, P-Channel SC-88 The NTJD1155L integrates a P and N-Channel MOSFET in a single package. This device is particularly suited for portable electronic equipment where low control signals, low battery voltages and high http //onsemi.com http //onsemi.com load currents are needed. The P-Channel device is specifically

 0.4. Size:97K  fuji
 2sd1157.pdf 

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

 0.5. Size:126K  fuji
 2sd1158.pdf 

 0.6. Size:11K  semelab
 bd115.pdf 

BD115 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 180V dia. IC = 0.15A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1

 0.7. Size:234K  cdil
 bd115.pdf 

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR BD115 TO-39 Metal Can Package ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNITS Collector Emitter Voltage VCEO 180 V Collector Emitter Voltage (RBE

 0.8. Size:209K  inchange semiconductor
 2sd1157.pdf 

isc Silicon NPN Power Transistor 2SD1157 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO High DC Current Gain- h = 250V(Min.) @I = 0.5A FE C Low Collector Saturation Voltage High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators DC-DC converter Solid sate relay

 0.9. Size:207K  inchange semiconductor
 2sd1159.pdf 

isc Silicon NPN Power Transistor 2SD1159 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.0V(Max) @I = 4A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal deflection output, high-current switching applications. ABSOLUTE

 0.10. Size:209K  inchange semiconductor
 2sd1158.pdf 

isc Silicon NPN Power Transistor 2SD1158 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO High DC Current Gain- h = 250V(Min.) @I = 1A FE C Low Collector Saturation Voltage High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operati APPLICATIONS Switching regulators DC-DC converter Solid sate relay

 0.11. Size:207K  inchange semiconductor
 2sd1154.pdf 

isc Silicon NPN Power Transistor 2SD1154 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 200V (Min) (BR)CEO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output for B/W TV set. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Collector-Base