Биполярный транзистор 2N3441 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2N3441
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 25 W
Макcимально допустимое напряжение коллектор-база (Ucb): 160 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 140 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Предельная температура PN-перехода (Tj): 200 °C
Граничная частота коэффициента передачи тока (ft): 0.2 MHz
Статический коэффициент передачи тока (hfe): 25
Корпус транзистора: TO66
2N3441 Datasheet (PDF)
2n3441.pdf
2N3441SEMELABMECHANICAL DATADimensions in mm (inches)MEDIUM POWERSILICON NPN 6.35 (0.250)8.64 (0.340)3.68(0.145) rad.TRANSISTOR3.61 (0.142)max.3.86 (0.145)rad.FEATURES Low Saturation Voltages High Voltage Ratings Maximum SafeOperatingAreaCurves for DC and Pulse Operation.1.27 (0.050)1.91 (0.750)4.83 (0.190)5.33 (0.210)9.14 (0.360)
2n3441.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3441 DESCRIPTION With TO-66 package Continuous collector current-IC=3A Power dissipation -PD=25W @TC=25 APPLICATIONS For use in general-purpose switching and Linear amplifier applications such as: Driver for high power outputs Series and shunt regulators Audio and servo amplifiers
2n3442r7.pdf
Order this documentMOTOROLAby 2N3442/DSEMICONDUCTOR TECHNICAL DATA2N3442High-Power IndustrialTransistors10 AMPERENPN silicon power transistor designed for applications in industrial and commercialPOWER TRANSISTORequipment including high fidelity audio amplifiers, series and shunt regulators andNPN SILICONpower switches.140 VOLTS Collector Emitter Sustaining Vol
2n3439 2n3440.pdf
2N34392N3440SILICON NPN TRANSISTORS STMicroelectronics PREFERREDSALESTYPES NPN TRANSISTORDESCRIPTION The 2N3439 and 2N3440 are silicon epitaxialplanar NPN transistors in jedec TO-39 metal casedesigned for use in consumer and industrialline-operated applications. These devices are particularly suited as drivers inhigh-voltage low current inverters, switching andseri
2n3442.pdf
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
2n3442g.pdf
2N3442High-Power IndustrialTransistorsNPN silicon power transistor designed for applications in industrialand commercial equipment including high fidelity audio amplifiers,series and shunt regulators and power switches.http://onsemi.comFeatures10 AMPERE Collector -Emitter Sustaining Voltage - VCEO(sus) = 140 Vdc (Min)POWER TRANSISTOR Excellent Second Breakdown Capabi
2n3442-d.pdf
2N3442High-Power IndustrialTransistorsNPN silicon power transistor designed for applications in industrialand commercial equipment including high fidelity audio amplifiers,series and shunt regulators and power switches.http://onsemi.comFeatures10 AMPERE Collector -Emitter Sustaining Voltage - VCEO(sus) = 140 Vdc (Min)POWER TRANSISTOR Excellent Second Breakdown Capabi
2n3442-2n4347.pdf
2N34422N4347HIGH POWER INDUSTRIAL TRANSISTORSHIGH POWER INDUSTRIAL TRANSISTORSNPN silicon transistors designed for applications in industrial and commercial equipment including highfidelity audio amplifiers, series and shunts regulators and power switches. Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0 Vdc (Max) @ IC = 2.0 Adc 2N4347 Collector-Emitter Susta
2n3440c3c.pdf
SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3439C3A / 2N3440C3A 2N3439C3B / 2N3440C3B 2N3439C3C / 2N3440C3C High Voltage Hermetic Ceramic Surface Mount Package. Variant B to MIL-PRF-19500/368 outline Ideally suited for drivers in high-voltage low current inverters, switching and series regulators. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA =
2n3440c3a.pdf
SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3439C3A / 2N3440C3A 2N3439C3B / 2N3440C3B 2N3439C3C / 2N3440C3C High Voltage Hermetic Ceramic Surface Mount Package. Variant B to MIL-PRF-19500/368 outline Ideally suited for drivers in high-voltage low current inverters, switching and series regulators. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA =
2n3440c3b.pdf
SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3439C3A / 2N3440C3A 2N3439C3B / 2N3440C3B 2N3439C3C / 2N3440C3C High Voltage Hermetic Ceramic Surface Mount Package. Variant B to MIL-PRF-19500/368 outline Ideally suited for drivers in high-voltage low current inverters, switching and series regulators. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA =
2n3440csm4r.pdf
SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3439CSM4 / 2N3439CSM4R 2N3440CSM4 / 2N3440CSM4R High Voltage Hermetic Ceramic Surface Mount Package. Ideally suited for drivers in high-voltage low current inverters, switching and series regulators. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) 2N3439 2N3440Symbols Parame
2n3447.pdf
2N3447Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 60V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 7.5A 12.70 (0.50) All Semelab hermetically sealed products can be processed in
2n3445.pdf
2N3445Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 60V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 7.5A 12.70 (0.50) All Semelab hermetically sealed products can be processed in
2n3440dcsm.pdf
2N3439DCSM2N3440DCSMHIGH VOLTAGE, MEDIUM POWER, NPNDUAL TRANSISTOR IN AHERMETICALLY SEALEDMECHANICAL DATACERAMIC SURFACE MOUNT PACKAGEDimensions in mm (inches)FOR HIGH RELIABILITY APPLICATIONSFEATURES2.29 0.20 1.65 0.13 1.40 0.15(0.055 0.006)(0.09 0.008) (0.065 0.005) DUAL SILICON PLANAR EPITAXIAL NPN TRANSISTOR2 3 HERMETIC CERAMIC SURFACE
2n3445.pdf
Product Specification www.jmnic.comSilicon NPN Power Transistors 2N3445 DESCRIPTION With TO-3 package Excellent safe operating area APPLICATIONS Designed for medium-switching and amplifier applications. PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALU
2n3446.pdf
Product Specification www.jmnic.comSilicon NPN Power Transistors 2N3446 DESCRIPTION With TO-3 package Excellent safe operating area APPLICATIONS Designed for medium-switching and amplifier applications. PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALU
2n3439 2n3440.pdf
2N3439 thru 2N3440 Qualified Levels: NPN LOW POWER SILICON JAN, JANTX, Available on TRANSISTOR JANTXV and JANS commercial versions Qualified per MIL-PRF-19500/368 DESCRIPTION This family of high-frequency, epitaxial planar transistors feature low saturation voltage. These devices are also available in TO-39 and low profile U4 and UA packaging. Microsemi also offers nume
2n3440ua.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http://www.microsemi.com NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/368 DEVICES LEVELS JAN 2N3439 * 2N3440JANTX 2N3439L * 2N3440LJANTXV
2n3448.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3448 DESCRIPTION With TO-3 package Excellent Safe Operating Area APPLICATIONS Designed for medium-switching and amplifier applications. PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER CON
2n3440.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2N3440DESCRIPTIONCollectorEmitter Sustaining Voltage-: V = 250 V(Min)CEO(SUS)DC Current Gain-: h = 40(Min) @ I = 20mAFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25
2n3442.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3442 DESCRIPTION With TO-3 package Excellent safe operating area APPLICATIONS For industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (T
2n3447.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3447 DESCRIPTION With TO-3 package Excellent safe operating area APPLICATIONS Designed for medium-switching and amplifier applications. PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER CON
2n3445.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3445 DESCRIPTION With TO-3 package Excellent safe operating area APPLICATIONS Designed for medium-switching and amplifier applications. PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDI
2n3446.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3446 DESCRIPTION With TO-3 package Excellent safe operating area APPLICATIONS Designed for medium-switching and amplifier applications. PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDI
Другие транзисторы... 2N3439S , 2N343A , 2N343B , 2N344 , 2N3440 , 2N3440CSM4 , 2N3440L , 2N3440S , 2SA1943 , 2N3441X , 2N3441Y , 2N3442 , 2N3443 , 2N3444 , 2N3444S , 2N3445 , 2N3446 .
Список транзисторов
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BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050