Биполярный транзистор 2N3442 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2N3442
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 117 W
Макcимально допустимое напряжение коллектор-база (Ucb): 160 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 140 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 10 A
Предельная температура PN-перехода (Tj): 200 °C
Граничная частота коэффициента передачи тока (ft): 0.5 MHz
Статический коэффициент передачи тока (hfe): 20
Корпус транзистора: TO204AA
2N3442 Datasheet (PDF)
2n3442.pdf
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
2n3442.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3442 DESCRIPTION With TO-3 package Excellent safe operating area APPLICATIONS For industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (T
2n3442r7.pdf
Order this documentMOTOROLAby 2N3442/DSEMICONDUCTOR TECHNICAL DATA2N3442High-Power IndustrialTransistors10 AMPERENPN silicon power transistor designed for applications in industrial and commercialPOWER TRANSISTORequipment including high fidelity audio amplifiers, series and shunt regulators andNPN SILICONpower switches.140 VOLTS Collector Emitter Sustaining Vol
2n3442g.pdf
2N3442High-Power IndustrialTransistorsNPN silicon power transistor designed for applications in industrialand commercial equipment including high fidelity audio amplifiers,series and shunt regulators and power switches.http://onsemi.comFeatures10 AMPERE Collector -Emitter Sustaining Voltage - VCEO(sus) = 140 Vdc (Min)POWER TRANSISTOR Excellent Second Breakdown Capabi
2n3442-d.pdf
2N3442High-Power IndustrialTransistorsNPN silicon power transistor designed for applications in industrialand commercial equipment including high fidelity audio amplifiers,series and shunt regulators and power switches.http://onsemi.comFeatures10 AMPERE Collector -Emitter Sustaining Voltage - VCEO(sus) = 140 Vdc (Min)POWER TRANSISTOR Excellent Second Breakdown Capabi
2n3442-2n4347.pdf
2N34422N4347HIGH POWER INDUSTRIAL TRANSISTORSHIGH POWER INDUSTRIAL TRANSISTORSNPN silicon transistors designed for applications in industrial and commercial equipment including highfidelity audio amplifiers, series and shunts regulators and power switches. Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0 Vdc (Max) @ IC = 2.0 Adc 2N4347 Collector-Emitter Susta
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050